CN1858997A - Crystal oscillator - Google Patents
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- CN1858997A CN1858997A CNA2006100757657A CN200610075765A CN1858997A CN 1858997 A CN1858997 A CN 1858997A CN A2006100757657 A CNA2006100757657 A CN A2006100757657A CN 200610075765 A CN200610075765 A CN 200610075765A CN 1858997 A CN1858997 A CN 1858997A
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- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01B—SOIL WORKING IN AGRICULTURE OR FORESTRY; PARTS, DETAILS, OR ACCESSORIES OF AGRICULTURAL MACHINES OR IMPLEMENTS, IN GENERAL
- A01B1/00—Hand tools
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Abstract
The invention discloses a crystal oscillator, which comprises the following parts: ceramic package, which contains first and second ceramic layers in the fluted space; electrode board, which contains multiple metal layers on one side of upper surface of first ceramic layer; piezoelectric element, whose one end is fixed on the electrode board to oscillate; conductive binder, which connects one end of piezoelectric element on the upper surface of electrode board; lid, which attached on the ceramic package to seal ceramic package.
Description
The cross reference of related application
The application requires the priority at the 2005-0036968 korean patent application of Korea S Department of Intellectual Property submission on May 3rd, 2005, and its full content is hereby expressly incorporated by reference.
Technical field
The present invention relates to crystal oscillator, and more particularly, relate to following a kind of crystal oscillator, wherein, the ceramic packaging (package) that formation has simple structure is used for the miniaturization of crystal oscillator, guarantee to be used to assemble the maximum space of crystal wafer (crystal piece), and wherein a plurality of metal level is by the electrode pad (pad of lamination, weld pad) is formed and has large tracts of land, make it possible to stably support and fixing large-size crystals sheet.
Background technology
Usually, crystal oscillator be to use crystal unit as the control element of frequency of oscillation to obtain the device of high stable frequency of oscillation, wherein, crystal unit utilizes the piezoelectric effect of quartz crystal.
Be installed on two surfaces of the crystal wafer that suitably downcuts from quartz crystal when electrode and alternating current flows between electrode, and if unique mechanical oscillation frequency of the frequency of this moment and crystal wafer when consistent, crystal oscillator resonance.At this moment, the reactance between the electrode presents the characteristic as electric series resonant circuit type, and resonance frequency is confirmed as the unique mechanical oscillation frequency by type, shape and the size decision of crystal wafer.The value of resonance frequency reaches several ten thousand to hundreds of thousands.
Crystal oscillator with fabulous piezoelectric property and high precision characteristic is used to require the communication system of high precision frequency (such as, mobile phone).According to employed frequency band, such crystal oscillator is divided into high frequency crystal oscillator, such as frequency oscillator (several MHz, frequency tolerance is ± 50 to 100ppm) or/and frequency converter (10 to 50MHz, frequency tolerance is ± 10ppm), and low frequency crystal oscillator, such as clock generator (32.768KHz, frequency tolerance is 20ppm).
The crystal of crystal oscillator manually generates in the pressure cooker of pressurization.Along its crystallographic axis sliced crystal, and its size and dimension is processed into and makes it have desired characteristic.Be formed with the crystal of wafer form manufacturing have low phase noise, high Q factor (factor of quality) and about the low frequency change rate of time and environment change.
The Q factor is the value of the frequency band selectivity characteristic in indication resonator, filter, the oscillator etc., and is called the factor of quality.
The Q factor is recently calculating by three dB bandwidth and centre frequency.The Q factor is big more, and the frequency selective characteristic of oscillator is good more.
If crystal wafer is used as crystal oscillator, then the crystal wafer that downcuts from crystal wafer should be fixed on the encapsulation.And on the surface of crystal wafer, electrode is formed for being electrically connected with crystal wafer, is connected to the inside or the outside electric component of encapsulation then.
On the other hand because the operating efficiency of oscillator and quality having a strong impact on of being subjected to that external environment condition changes and pollute, so oscillator should be sealed having low-down encapsulation leak rate, the external environment condition of avoiding encapsulating with the protection crystal wafer and the influence of pollution.The method of sealed package is as follows: the supporting layer that is made of metal attached on the ceramic packaging, is adhered to by electric welding then and seals by the lid made from the supporting layer same material.At this moment, between pottery and the metal and the airtight grade of the adhesion between metal and metal part be important.If it is pollutant enters from the outside, then all destroyed such as the multifrequency nature of reliability.
Because oscillator is small-sized but can changes the generation stabilized frequency with respect to external environment condition, so oscillator can be used to the character forming circuit or the color forming circuit of computer or communication system.The product such as VCXO (VCXO), temperature compensating crystal oscillator (TCXO), thermostatic control crystal oscillator (OCXO) etc. that further is employed is used as core component and uses, and wherein core component is as the satellite in outer space or the standard of all signals in the measurement mechanism.
Along with the miniaturization gradually of mobile communication and development of wireless communication devices and personal portable terminals and communication system, its peripheral cell also trends towards miniaturization.On the contrary, oscillator has than the relative bigger volume of peripheral cell.This is because because the increase of the oscillator spatial dimension that restriction caused of the restriction of machinery between oscillator and outside and electrical connection and crystal wafer miniaturization.And because the frequency characteristic that crystal oscillator produces is decided by the thickness and the size of crystal wafer, if therefore the size of crystal wafer is reduced to less than preliminary dimension, then frequency characteristic changes, and this makes and is difficult to the oscillator miniaturization.
With reference to Fig. 1 to Fig. 2 B structure according to the crystal oscillator of correlation technique is described below.
With reference to Fig. 1, comprise according to the oscillator of correlation technique: by first ceramic layer 101, second ceramic layer 102 and the supporting layer 103 of whole lamination.Lamination has in the ceramic packaging of multilayer therein, forms space 120 and 130, to hold crystal wafer 105.In second ceramic layer 102, electrode pad 121 is formed and is connected to crystal wafer 105.On the top of supporting layer 103, place and connection cover 104, with the sealing oscillator.
First ceramic layer 101 is basic elements of character of ceramic packaging.
Second ceramic layer 102 is laminated on first ceramic layer 101, and crystal wafer 105 electrode pads 121 fixing and that be connected to are formed on the either side of an end of second ceramic layer 102.Space 130 is formed on the central authorities of second ceramic layer 102, so that be fixed to the lower surface of crystal wafer 105 of electrode pad 121 and the upper surface each interval preset distance of first ceramic layer 101.
Supporting layer 103 is laminated on second ceramic layer 102, and has the space 103 that crystal wafer 105 is set.Lid 104 is placed and is connected on the supporting layer 103.
Crystal wafer 105 has the electrode 150 that is formed on its upper surface and the lower surface.The electrode 150 of crystal wafer 105 connects (wherein electroconductive binder is applied on the electrode pad 121 that is formed in second ceramic layer 102) by electroconductive binder 106, so that an end of crystal wafer 105 is fixed and supports.
With reference to Fig. 2 A and Fig. 2 B, first ceramic layer 101, second ceramic layer 102 and supporting layer 103 by lamination to form space 120 and 130.
Be formed on second ceramic layer, 102 upper surfaces on the upper surface of the relative inwall of electrode pad 121 on, form the Support, to be supported and fixed on the other end of the crystal wafer 105 on the electrode pad 121.
The other end of crystal wafer 105 is supported in the Support, so that the electrode 150 that is formed on crystal wafer 105 lower surfaces contact with the upper surface of first ceramic layer 101, and crystal wafer 105 has only an end to fix by electroconductive binder 106.Therefore, the other end that is not fixed of crystal wafer 105 is downward-sloping.When the inclination angle of crystal wafer 105 was very big, the other end of crystal wafer contacted with the upper surface of second ceramic layer 102, and this makes the oscillating characteristic defectiveness of crystal wafer 105.
In order to prevent that crystal wafer 105 is damaged when crystal wafer 105 is fixed to the electrode pad 121 of second ceramic layer 102, supporting layer 103 has the inwall that forms therein, itself and the other end interval preset distance D of crystal wafer 105.Supporting layer 103 is formed has such height, make cover 104 not be formed on crystal wafer 105 upper surfaces on electrode 150 contact, and crystal wafer can vibrate reposefully.
Crystal oscillator described above provides ceramic packaging, wherein, first ceramic layer 101, second ceramic layer 102 and supporting layer 103 by lamination to be formed for assembling the space 120 and 130 of crystal wafer 105.Because a plurality of ceramic layers are by lamination, so the increase of the external dimensions of crystal oscillator, this does not satisfy the requirement of miniaturization.
Thereby, need a kind of crystal oscillator of exploitation, wherein, form and have the simpler structure that is used for the oscillator miniaturization and the ceramic packaging of structure, and can assemble and have large-sized crystal wafer 105.
Summary of the invention
The invention has the advantages that provides a kind of crystal oscillator, wherein, formation has the ceramic packaging of simple structure, so that external dimensions reduces and the space is maximized, make large-scale crystal wafer can be assemblied on the ceramic packaging of miniaturization, and form the connection pole plate, stably to fix and to support an end of crystal wafer.
Other aspects and the advantage of general inventive concept of the present invention, part will be illustrated in the following description, and part is apparent from describe, and perhaps can understand by implementing this general inventive concept.
According to an aspect of the present invention, crystal oscillator comprises: ceramic packaging, wherein, first ceramic layer and second ceramic layer by lamination to form recessed space; Electrode pad is made of a plurality of metal levels, and wherein a plurality of metal levels are laminated on the side of the first ceramic layer upper surface; Piezoelectric element, one end are fixed on the electrode pad so that vibration; Electroconductive binder is applied on the upper surface of electrode pad, to connect an end of piezoelectric element; And lid, be placed on the top of ceramic packaging, with seal ceramic package.
According to a further aspect in the invention, a plurality of metal levels of electrode pad are formed respectively and are had the area that differs from one another.
According to a further aspect in the invention, a plurality of metal levels of electrode pad are formed respectively and are had area identical.
According to a further aspect in the invention, the uppermost metal level of electrode pad has minimum area.
According to a further aspect in the invention, the uppermost metal level of electrode pad has maximum area.
According to a further aspect in the invention, electrode pad is formed by the tungsten layer of a plurality of laminations.
According to a further aspect in the invention, on the surface of the tungsten layer of a plurality of laminations, use gold-plated.
According to a further aspect in the invention, on the surface of the tungsten layer of a plurality of laminations, use gold-plated and nickel plating.
According to a further aspect in the invention, piezoelectric element is a crystal wafer.
In crystal oscillator according to the present invention, first ceramic layer and second ceramic layer by whole lamination to form ceramic packaging.In ceramic packaging, form the space to hold piezoelectric element.On a side of the first ceramic layer upper surface, pole plate is formed an end that is connected to piezoelectric element.Lid is placed and is connected on the top of second ceramic layer, with the sealing oscillator.
In a preferred embodiment of the invention, a kind of crystal wafer of piezoelectric element is employed as above-mentioned piezoelectric element.
Description of drawings
In conjunction with the accompanying drawings, from following description to embodiment, these of general inventive concept of the present invention and/or other aspects and advantage will become obviously and be easier to understand, in the accompanying drawings:
Fig. 1 is the decomposition diagram that illustrates according to the crystal oscillator of correlation technique;
Fig. 2 A is the preceding cross-sectional view of Fig. 1;
Fig. 2 B is the cross-sectional view along the A-A line intercepting of Fig. 2 A;
Fig. 3 is the decomposition diagram according to the crystal oscillator of first embodiment of the invention;
Fig. 4 A is the preceding cross-sectional view of Fig. 3;
Fig. 4 B is the cross-sectional view along the B-B line intercepting of Fig. 4 A;
Fig. 5 A is the cross-sectional view that illustrates according to the essential part of the crystal oscillator of first embodiment of the invention, and the state on the electrode pad that electroconductive binder is applied in crystal oscillator is shown;
Fig. 5 B is the cross-sectional view that illustrates according to the essential part of the modification embodiment of the electrode pad of the crystal oscillator of first embodiment of the invention;
Fig. 5 C is the cross-sectional view that illustrates according to the essential part of the crystal oscillator of first embodiment of the invention, and the situation on the tram of electrode pad that electroconductive binder is not applied in crystal oscillator is shown;
Fig. 6 A is the preceding cross-sectional view that illustrates according to the crystal oscillator of second embodiment of the invention;
Fig. 6 B is the cross-sectional view along the C-C line intercepting of Fig. 6 A;
Fig. 7 A is the preceding cross-sectional view that illustrates according to the crystal oscillator of third embodiment of the invention;
Fig. 7 B is the cross-sectional view along the D-D line intercepting of Fig. 7 A; And
Fig. 7 C is the cross-sectional view that illustrates according to the essential part of the crystal oscillator of third embodiment of the invention, and the state on the electrode pad that electroconductive binder is applied in crystal oscillator is shown.
Embodiment
Now, with reference to the embodiment of the general inventive concept of the present invention, the example is shown in the drawings in detail, and wherein, in whole accompanying drawing, similar reference number refers to similar element.Below embodiment will be described, to explain general inventive concept of the present invention by the reference accompanying drawing.
Describe the preferred embodiments of the present invention in detail hereinafter with reference to accompanying drawing.
[first embodiment]
Fig. 3 is the decomposition diagram that illustrates according to the crystal oscillator of first embodiment of the invention.Fig. 4 A is the preceding cross-sectional view of Fig. 3, and Fig. 4 B is the cross-sectional view along the B-B line intercepting of Fig. 4 A.
Be used for having first ceramic layer 1 and second ceramic layer 2 according to the ceramic packaging of the crystal oscillator of first embodiment of the invention, its by lamination to form recessed space 20.In a side in the space 20 of ceramic packaging, an end of crystal wafer 5 is fixed to electrode pad 4.In electrode pad 4, the metal level that has different area each other is by lamination, and its uppermost metal level is formed has minimum area.
With reference to Fig. 3, first ceramic layer 1 is the primary element that is equipped with crystal wafer 5 on it.On a side of first ceramic layer, 1 upper surface, electrode pad 4 is formed an end that is connected to crystal wafer 5.
In the present embodiment, two metal levels by lamination to form electrode pad 4.On the upper surface of first ceramic layer 1, the first metal layer 41 is set, the first metal layer is provided with second metal level 42.Second metal level 42 is formed has the area littler than the first metal layer 41.
Corresponding to the space 120 according to second ceramic layer 102 of correlation technique, a plurality of metal levels are formed on the upper surface of first ceramic layer 1, to constitute electrode pad 4 in order to ensure the vibration district of crystal wafer 5.
Here, the height of electrode pad 4 is by the lamination quantity decision of each metal layer thickness and metal level.
Preferably, the first metal layer 41 and second metal level 42 form the thickness that has much at one, and wherein lamination has the electrode pad 4 of the first metal layer 41 and second metal level 42 to be formed the thickness with 10 to 30 μ m.
Usually, the first metal layer 41 and second metal level 42 are formed the thickness that has less than 15 μ m.If each metal level is formed the thickness that has greater than 15 μ m, then may collapse, make upper surface can not form the plane.
If collapse when forming the first metal layer 41, then the area of the first metal layer 41 becomes too big.So, the spacing distance between the inwall of the first metal layer 41 and second ceramic layer 2 reduces, and makes may to destroy electrical characteristics or be short-circuited.Therefore, metal level preferably forms the thickness that makes that metal level does not collapse.
Shown in Fig. 5 A, in the electrode pad 4 according to first embodiment of the invention, the area of the first metal layer 41 is greater than the area of second metal level 42.
With reference to Fig. 5 A, electroconductive binder 6 is employed (apply, coating) upper face center at second metal level 42 of electrode pad 4.Yet though second metal level 42 is formed and has that electroconductive binder 6 drips to area so little on the first metal layer 41 when using electroconductive binder 6 as shown in Figure 3, because its thixotropy, therefore the shape of applied electroconductive binder 6 is held.Therefore, the difficulty that does not have fixed crystal sheet 5.
On the other hand, can be nickel plating or gold-plated according to the surface of the electrode pad 4 of first embodiment of the invention, to form electrode pad 4 '.
Yet the nickel plating 43 of electrode pad 4 ' or gold-plated 44 is not to carry out.
On the surface of electrode pad 4 ', use gold-plated 44 or gold-plated alloy, with connection and the conductivity thereof between intensifier electrode 4 ' and the electroconductive binder 6.And, after on the surface that nickel plating 43 is applied in the electrode pad of making by tungsten 4 ', can use gold-plated 44, to form two coating, this feasible easily being applied in gold-plated 44 becomes possibility on the tungsten, wherein tungsten is the material of the first metal layer 41 and second metal level 42.
Similarly, revise embodiment shown in Fig. 5 B, the nickel plating 43 and gold-plated 44 that wherein has same thickness is used on the surface of electrode pad 4 ', and wherein the electrode pad middle level is pressed with the first metal layer 41 and second metal level 42.
The plating that is applied on the electrode pad 4 ' is not limited to gold-plated 44.Also can use silver-plated or silver-plated alloy.
Second ceramic layer 2 is laminated on the upper surface of first ceramic layer 1, and has the space 20 that crystal wafer 5 is set.
First ceramic layer 1 and second ceramic layer 2 are formed by ceramic material.First ceramic layer 1 forms rectangular-plate-shaped, and second ceramic layer 2 forms the rectangle shaped as frame.First ceramic layer 1 has identical external dimensions with second ceramic layer 2.
As shown in Fig. 4 A, the thin metallic seal layer of being made by the Kovar alloy (Kovar) that comprises Fe-Ni alloy or Fe-Ni-Go composition 21 is formed on the upper surface of second ceramic layer 2, make that the lid of being made by Kovar alloy 3 is easily connected to second ceramic layer 2 when second ceramic layer 2 is connected to each other with lid 3.In addition, on the lower surface of metallic seal layer 21, add the metallic bond coat (not shown) that lamination wherein has the dissimilar bond tool of conduct of tungsten layer, nickel dam and platinum layer, make second ceramic layer 2 and metallic seal layer 21 to be connected to each other securely.Therefore, metallic seal layer 21 easily is connected on the upper surface of second ceramic layer 2.
The lid 3 that the metallic plate that is insulated by coating forms can itself have shielding action because cover 3 as stopping the blocking unit of noise.
Electroconductive binder based on silicon has conductivity, and this is because it comprises the silver-colored filler as electric conducting material in silicon materials.In addition, the electroconductive binder based on silicon that is formed by relative soft material is used as buffer, makes and can directly not transmitted from the vibration of outside.Yet it is very weak with the adhesion that is plated in electrode pad 4 lip-deep gold.On the other hand, have conductivity based on the electroconductive binder of epoxy, this is because it comprises the silver-colored filler as electric conducting material in the resin based on epoxy or polyamide.In addition, the adhesive based on epoxy that is formed by relative hard material firmly fixes an end of crystal wafer 5 after hardening.
Below, will the process according to the crystal oscillator of first embodiment of the invention shown in shop drawings 4A and Fig. 4 B be described.
At first, first ceramic layer 1 and second ceramic layer 2 made by ceramic material also integrally are connected to each other by lamination, have the ceramic packaging in the space 20 of assembling crystal wafer 5 with formation.
In other words, first ceramic layer 1 and second ceramic layer 2 by lamination and be connected to each other, form the bulk ceramics encapsulation with the form of tellite when firing under 1350 ℃.
Tellite is a kind of pottery band (ceramic tape), and wherein, the composite material of glass and pottery forms thinner than paper.
On the upper surface of second ceramic layer 2, form the thin metallic seal layer of making by the Kovar alloy material identical 21 with lid 3, make that covering 3 is easily connected to second ceramic layer 2.Metallic seal layer 21 is connected to the upper surface of second ceramic layer 2 by the metallic bond coat (not shown).
Shown in Fig. 4 A, when finishing ceramic packaging, by the lamination of ceramic layer 1 and 2, in the inner space 20 that forms of ceramic packaging by such method.
On a side of first ceramic layer, 1 upper surface, electrode pad 4 forms an end that is connected to crystal wafer 5.When ground floor 1 and the second layer 2 are connected to each other, or after finishing ceramic packaging, electrode pad 4 can be formed on the upper surface of first ceramic layer 1.
When electrode pad 4 is formed on the side of first ceramic layer, 1 upper surface, on the upper surface of second metal level 42 of electrode pad 4, use electroconductive binder 6.Then, an end of crystal wafer 5 is connected on the electroconductive binder 6, makes crystal wafer 5 to vibrate and is fixed to level.
Preferably, when crystal wafer 5 is installed on the electrode pad 4, guarantee that arbitrary end of crystal wafer 5 and the spacing distance between second ceramic layer, 2 inwalls greater than 100 μ m, make crystal wafer 5 not contact with the inwall of second ceramic layer 2, this makes it possible to prevent to damage crystal wafer 5.Preferably, second ceramic layer 2 is formed has such height, that is, the feasible electrode 50 that is formed on crystal wafer 5 upper surfaces is not covered 3 influence or do not contact with lid, and crystal wafer 5 can vibrate reposefully.
For the electrical characteristics that prevent crystal oscillator are damaged or prevent short circuit, form the first metal layer 41 of electrode pad 4 so that with the inwall of second ceramic layer 2 preset distance at interval.
Because crystal wafer 5 has only an end to be connected by electroconductive binder 6 and is fixed, so the other end of crystal wafer 5 is downward-sloping a little immediately after the one end is connected.Then, when electroconductive binder 6 hardening, the other end of crystal wafer 5 raises gradually.In addition, when finishing sclerosis, crystal wafer 5 is horizontally disposed with or is inclined upwardly a little.
After finishing crystal wafer 5 fixing, lid 3 is placed on the metallic seal layer 21 that is formed on second ceramic layer, 2 tops, and is connected and is sealed in nitrogen or the oxygen environment by the seam soldering method.
Typically, when lid 3 when sealed, be filled in the space 20 that is equipped with crystal wafer 5 as the inert gas of anti-oxidant gas.Inert gas can reduce temperature to the influence of crystal wafer 5 and can prevent corrosion.
According to the first embodiment of the present invention, the structure of ceramic packaging can easily form, and this is because ceramic packaging has simple structure.In addition, on a side of the first ceramic layer upper surface, wherein a plurality of metal levels are formed by the electrode pad of lamination has predetermined altitude.Therefore, an end of crystal wafer can be supported and fixing, and the while can be replaced according to the space of second ceramic layer 102 of correlation technique.
[second embodiment]
Fig. 6 A is the preceding cross-sectional view that illustrates according to the crystal oscillator of second embodiment of the invention, and Fig. 6 B is the cross-sectional view along the C-C line intercepting of Fig. 6 A.Below, with the description of omitting to part same as the previously described embodiments.
Ceramic packaging according to the crystal oscillator of second embodiment of the invention has a plurality of ceramic layers, that is, by lamination to form first ceramic layer 1 and second ceramic layer 2 in recessed space 20.In a side in the space 20 of ceramic packaging, the end of crystal wafer 5a is fixed to electrode pad 4a, wherein, have metal level of the same area in electrode pad by lamination.
With reference to Fig. 6 A and Fig. 6 B, comprise that the first metal layer 41a of electrode pad 4a and the second metal level 42a have area identical.And the inwall of the first metal layer 41a and second ceramic layer 2 is preset distance at interval.
Have large tracts of land if the second ceramic layer 42a is formed, then be laminated on the first ceramic layer 41a on the second ceramic layer 42a and also be formed and have large tracts of land.Therefore, have than the crystal wafer 5 larger sized crystal wafer 5a of first embodiment and can support and fix by a large amount of electroconductive binders.
[the 3rd embodiment]
Fig. 7 A is the preceding cross-sectional view that illustrates according to the crystal oscillator of third embodiment of the invention, Fig. 7 B is the cross-sectional view along the D-D line intercepting of Fig. 7 A, and Fig. 7 C is the cross-sectional view that the essential part of crystal oscillator is shown, and shows electroconductive binder 6a and is used in according to the state on the electrode pad 4b of the crystal oscillator of third embodiment of the invention.
Ceramic packaging according to the crystal oscillator of third embodiment of the invention has a plurality of ceramic layers, that is, by lamination to form first ceramic layer 1 and second ceramic layer 2 in recessed space 20.In a side in the space 20 of ceramic packaging, the end of crystal wafer 5a is fixed to electrode pad 4b.In electrode pad 4b, the metal level that has different area each other is by lamination, and its uppermost metal level is formed has maximum area.
With reference to Fig. 7 A to Fig. 7 C, the second metal level 42b that comprises electrode pad 4b is formed has the area bigger than the first metal layer 41b, and the inwall of the first metal layer 41b and second ceramic layer 2 preset distance at interval.Therefore, though the second metal level 42b be formed have than between the first metal layer 41b and second ceramic layer, 2 inwalls apart from d shorter apart from d1, electrical characteristics can be not destroyed or can not be short-circuited.
Have the area bigger because the second metal level 42b is formed, so electroconductive binder 6a is widely used on the second metal level 42b, to be connected to an end of crystal wafer 5a lower surface widely than the first metal layer 41b.Therefore, crystal wafer 5a can be more stably supported.In addition, because the second metal level 42b forms near the inwall of second ceramic layer 2, therefore can assemble the crystal wafer 5a that has less times greater than the size of the crystal wafer 5 of first embodiment.
Aforesaid according to crystal oscillator of the present invention in, first ceramic layer and second ceramic layer are had the ceramic packaging of simple structure with formation by lamination.Therefore, the structure of ceramic packaging is easily formed, and ceramic packaging is guaranteed the wide zone that crystal wafer can assemble safely.
Because wherein a plurality of metal levels are formed in by the electrode pad of lamination on the side of the first ceramic layer upper surface and have predetermined altitude, therefore an end of crystal wafer can be supported and fixing, and the while can be replaced according to the space of second ceramic layer of correlation technique.
In electrode pad, when uppermost metal level is formed when having than large tracts of land, the range of application of electroconductive binder broadens.Therefore, crystal wafer can be fixed more firmly, and have larger sized crystal wafer can be supported and fixing.Especially, because the spacing distance between the uppermost metal level and the second ceramic layer inwall can shorten, so the spatial accommodation of crystal wafer can enlarge.As a result, having larger sized crystal wafer can be supported and fixing.
In addition, because ceramic packaging is simple in structure, therefore can effectively utilizes limited space, and can realize the miniaturization of crystal oscillator.
Though illustrated and described some embodiment of general inventive concept of the present invention, but for the person of ordinary skill of the art, under the situation of principle that does not break away from general inventive concept and spirit, can make change to these embodiment, its scope is defined in claims and equivalent thereof.
Claims (9)
1. crystal oscillator comprises:
Ceramic packaging, wherein, first ceramic layer and second ceramic layer by lamination to form recessed space;
Electrode pad comprises a plurality of metal levels on the side that is laminated to the described first ceramic layer upper surface;
Piezoelectric element, one end are fixed on the described electrode pad so that vibration;
Electroconductive binder is applied on the described electrode pad upper surface, to connect an end of described piezoelectric element; And
Lid is placed on the top of described ceramic packaging, to seal described ceramic packaging.
2. crystal oscillator according to claim 1, wherein, a plurality of metal levels of described electrode pad are formed respectively has different area mutually.
3. crystal oscillator according to claim 1, wherein, a plurality of metal levels of described electrode pad are formed respectively has area identical.
4. crystal oscillator according to claim 2, wherein, the uppermost metal level of described electrode pad has minimum area.
5. crystal oscillator according to claim 2, wherein, the uppermost metal level of described electrode pad has maximum area.
6. crystal oscillator according to claim 1, wherein, described electrode pad is formed by the tungsten layer of a plurality of laminations.
7. crystal oscillator according to claim 6 wherein, is used gold-plated on the surface of the tungsten layer of described a plurality of laminations.
8. crystal oscillator according to claim 6 wherein, is used gold-plated and nickel plating on the surface of the tungsten layer of described a plurality of laminations.
9. crystal oscillator according to claim 1, wherein, described piezoelectric element is a crystal wafer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050036968 | 2005-05-03 | ||
| KR1020050036968A KR100699586B1 (en) | 2005-05-03 | 2005-05-03 | Crystal Oscillator |
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| CN1858997A true CN1858997A (en) | 2006-11-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2006100757657A Pending CN1858997A (en) | 2005-05-03 | 2006-04-26 | Crystal oscillator |
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| Country | Link |
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| JP (1) | JP2006314083A (en) |
| KR (1) | KR100699586B1 (en) |
| CN (1) | CN1858997A (en) |
| TW (1) | TW200640121A (en) |
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| CN103311430A (en) * | 2012-03-15 | 2013-09-18 | 日本电波工业株式会社 | Piezoelectric device and method for fabricating the same |
| CN103840790A (en) * | 2012-11-26 | 2014-06-04 | 苏州工业园区阳晨封装技术有限公司 | Cold pressure welding ceramic package case and crystal oscillator using the same |
| CN101667809B (en) * | 2008-09-02 | 2014-12-31 | 日本电波工业株式会社 | Constant-temperature type crystal oscillator |
| CN105634434A (en) * | 2014-11-24 | 2016-06-01 | 三星电机株式会社 | Crystal oscillator package and oscillation part thereof |
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| KR100699579B1 (en) * | 2005-08-03 | 2007-03-23 | 삼성전기주식회사 | Multi mode crystal oscillator |
| KR100738388B1 (en) * | 2005-11-29 | 2007-07-12 | 삼성전기주식회사 | Crystal unit |
| KR100878395B1 (en) * | 2007-11-23 | 2009-01-13 | 삼성전기주식회사 | Method for fabricating crystal device |
| JP2009207067A (en) * | 2008-02-29 | 2009-09-10 | Kyocera Kinseki Corp | Piezoelectric device |
| KR101328221B1 (en) * | 2010-11-26 | 2013-11-14 | 삼성전기주식회사 | Piezoelectric vibrator |
| JP6476752B2 (en) * | 2014-10-30 | 2019-03-06 | 株式会社大真空 | Method for manufacturing piezoelectric device |
| CN107769750A (en) * | 2017-11-13 | 2018-03-06 | 成都泰美克晶体技术有限公司 | A kind of complete quartz crystal resonator of modified electrode attachment structure and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4222020B2 (en) * | 2002-12-17 | 2009-02-12 | セイコーエプソン株式会社 | Piezoelectric oscillator |
| KR100501194B1 (en) * | 2003-06-25 | 2005-07-18 | 삼성전기주식회사 | crystal oscillator |
-
2005
- 2005-05-03 KR KR1020050036968A patent/KR100699586B1/en not_active IP Right Cessation
-
2006
- 2006-03-15 JP JP2006071414A patent/JP2006314083A/en active Pending
- 2006-04-19 TW TW095114003A patent/TW200640121A/en unknown
- 2006-04-26 CN CNA2006100757657A patent/CN1858997A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101667809B (en) * | 2008-09-02 | 2014-12-31 | 日本电波工业株式会社 | Constant-temperature type crystal oscillator |
| CN103311430A (en) * | 2012-03-15 | 2013-09-18 | 日本电波工业株式会社 | Piezoelectric device and method for fabricating the same |
| CN103311430B (en) * | 2012-03-15 | 2017-06-09 | 日本电波工业株式会社 | The manufacture method of piezo-electric device and piezo-electric device |
| CN103840790A (en) * | 2012-11-26 | 2014-06-04 | 苏州工业园区阳晨封装技术有限公司 | Cold pressure welding ceramic package case and crystal oscillator using the same |
| CN105634434A (en) * | 2014-11-24 | 2016-06-01 | 三星电机株式会社 | Crystal oscillator package and oscillation part thereof |
| CN105634434B (en) * | 2014-11-24 | 2020-04-28 | 三星电机株式会社 | Crystal oscillator package and vibrating part thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006314083A (en) | 2006-11-16 |
| KR20060114821A (en) | 2006-11-08 |
| KR100699586B1 (en) | 2007-03-23 |
| TW200640121A (en) | 2006-11-16 |
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