CN1851721A - Reliability estimating method for gallium arsenide one-chip microwave integrated circuit - Google Patents
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Abstract
The present invention includes analysing gallium arsenide monolithic microwave integrated circuit, thereby obtaining chip concerned rate of failures and package and external environment concerned rate of failures; according to chip concerned rate of failures and package and external environment concerned rate of failures sum to evaluate gallium arsenide monolithic microwave integrated circuit degree of reliability. The present invention provides guideline for gallium arsenide monolithic microwave integrated circuit rate of failures level and reliability evaluating.
Description
Technical field
The present invention relates to the GaAs single-chip microwave integration circuit technology, relate in particular to a kind of reliability estimation method of the GaAs single-chip microwave integration circuit based on mathematical statistics and the physics of failure.
Background technology
Monolithic integrated microwave circuit (MMIC) is to prepare passive and active components and parts at the semi insulating semiconductor substrate with processes such as extension, injection, photoetching, evaporation, sputters, and couples together and consist of the functional circuit be applied to microwave (even millimeter wave) frequency range. It comprises monolithic integrated circuit chip and the packaging part thereof of the Digital and analog function that all can be realized in 1～300GHz scope, its frequency range even can expand to whole radio-frequency region. Because the electron mobility of GaAs (GaAs) material is higher, energy gap is wide, operating temperature range is large, the microwave transmission performance is good, the characteristics such as circuit loss is little, noise is low so the monolithic integrated microwave circuit MMIC take GaAs substrate has, bandwidth, dynamic range is large, power is large, added efficiency is high, the anti-electromagnetic-radiation ability is strong. GaAs single-chip microwave integration circuit (GaAs MMIC) comprises the several functions circuit, such as low-noise amplifier (LNA), power amplifier, frequency mixer, upconverter, wave detector, modulator, voltage controlled oscillator (VCO), phase shifter, switch, MMIC receiving and transmitting front end, even whole transmitting/receiving (T/R) assembly (receive-transmit system).
The application of GaAs MMIC is very wide, and now wide commercial market such as mobile communication, satellite communication etc. have become the important impetus of GaAs MMIC development. Just so, have the high-performance except requiring GaAs MMIC, also require to have high reliability. Therefore, GaAs MMIC is carried out reliability prediction and seem particularly important. But, the technology of also GaAs single-chip microwave integration circuit not being carried out quantitative reliability prediction at present.
Summary of the invention
For the shortcoming of prior art, the purpose of this invention is to provide a kind of reliability estimation method of GaAs single-chip microwave integration circuit, realize the quantitative reliability prediction to GaAs single-chip microwave integration circuit.
To achieve these goals, technical scheme of the present invention is: a kind of reliability estimation method of GaAs single-chip microwave integration circuit, and, it comprises the steps:
(1) thus GaAs single-chip microwave integration circuit analyzed obtain the crash rate relevant with chip and the relevant crash rate with encapsulation and external environment condition;
(2) according to the described crash rate relevant with chip and with encapsulation and external environment condition the reliability standard of relevant crash rate sum assessment GaAs single-chip microwave integration circuit.
In said method:
The described crash rate relevant with chip equals the product of complexity crash rate, temperature coefficient, application factor, technological coefficient, mature coefficient and the quality coefficient of chip.
The described crash rate relevant with encapsulation and external environment condition equals to encapsulate the product of complexity crash rate, environmental coefficient, mature coefficient and quality coefficient.
Determine described temperature coefficient by accelerated life test.
By technique qualification rate and chip area and total grid width relation, and in conjunction with the test data of accelerated life test, obtain described complexity crash rate.
By collect, arrangement and analyze the mortality of carrying out the aging project of reliability screening at the line of production technology of the GaAs device of different capacity, obtain described application factor.
By analyzing the field failure rate level of the GaAs single-chip microwave integration circuit that contrasts multiple transistor technology, obtain described technological coefficient.
Compared with prior art, the relation of the major influence factors such as quantitative description GaAs single-chip microwave integration circuit of the present invention and environment for use, product structure, technique is for determining reliability index, carrying out reliability prediction foundation is provided.
Description of drawings
The present invention is described in further detail below in conjunction with accompanying drawing.
Fig. 1 is method flow block diagram of the present invention.
The specific embodiment
See also Fig. 1, the reliability estimation method of GaAs single-chip microwave integration circuit of the present invention comprises the steps:
(1) on the basis of the characteristics of analyzing GaAs single-chip microwave integration circuit, main failure mode and influence degree thereof, tentatively sets up GaAs single-chip microwave integration circuit reliability prediction Mathematical Modeling;
(2) carry out reliability test, the test data of Collection and analysis GaAs single-chip microwave integration circuit, process data and field data obtain each model coefficient in the reliability prediction model;
(3) GaAs single-chip microwave integration circuit reliability prediction model engineering is used, by collect with analyze piezolectric gyroscope come and improve and verify the accuracy of each model coefficient with information;
(4) set up final GaAs single-chip microwave integration circuit reliability prediction model, with the relation of the major influence factors such as Mathematical Modeling quantitative description GaAs single-chip microwave integration circuit crash rate and credit rating, environment for use, product structure, technique, application form, according to crash rate relevant with chip described in the model and with encapsulation and external environment condition the reliability level of relevant crash rate sum assessment GaAs single-chip microwave integration circuit.
In said method:
The crash rate of described GaAs single-chip microwave integration circuit be the crash rate relevant with chip and with encapsulation and external environment condition relevant crash rate sum.
The described crash rate relevant with chip equals the product of complexity crash rate, temperature coefficient, application factor, technological coefficient, mature coefficient and the quality coefficient of chip.
The described crash rate relevant with encapsulation and external environment condition equals to encapsulate the product of complexity crash rate, environmental coefficient, mature coefficient and quality coefficient.
By technique qualification rate and chip area and total grid width relation, and in conjunction with the test data of accelerated life test, obtain described chip complexity crash rate. The chip complexity crash rate provides by different crystal pipe number, different operating frequency.
Determine described temperature coefficient by accelerated life test, provide the temperature coefficient of GaAs single-chip microwave integration circuit channel temperature between from 25 ℃ to 175 ℃.
Carry out the mortality of the aging project of reliability screening at the line of production technology of the GaAs device of different capacity by collection, arrangement and analysis, obtain described application factor: when the application model of GaAs single-chip microwave integration circuit was small-power, switch, low noise, application factor was 1.0; When the application model of GaAs single-chip microwave integration circuit was power-type, driver, application factor was 4.0.
By analyzing the field failure rate level of the GaAs single-chip microwave integration circuit that contrasts multiple transistor technology, obtain described technological coefficient: when adopting the MESFET transistor technology, technological coefficient is 1.0; When adopting the HBT transistor technology, technological coefficient is 1.4; When adopting the HEMT transistor technology, technological coefficient is 4.4.
According to the GaAs single-chip microwave integration circuit of different packaging technologies and form, obtain described encapsulation complexity factor.
According to the residing environment of GaAs single-chip microwave integration circuit, obtain different environmental coefficients: when environment was GB, environmental coefficient was 1.0; When environment was GMS, environmental coefficient was 1.5; When environment was GF1, environmental coefficient was 2.4; When environment was GF2, environmental coefficient was 6.5; When environment was GM1, environmental coefficient was 6.3; When environment was GM2, environmental coefficient was 11; When environment was MP, environmental coefficient was 6.8; When environment was NSB, environmental coefficient was 7.5; When environment was NS1, environmental coefficient was 4.5; When environment was NS2, environmental coefficient was 10; When environment was NU, environmental coefficient was 14; When environment was AIF, environmental coefficient was 15; When environment was AUF, environmental coefficient was 20; When environment was AIC, environmental coefficient was 10; When environment was AUC, environmental coefficient was 13; When environment was ARW, environmental coefficient was 19; When environment was SF, environmental coefficient was 1.2; When environment was ML, environmental coefficient was 32; When environment was MF, environmental coefficient was 15.
Maturity according to GaAs single-chip microwave integration circuit is produced obtains described mature coefficient: when ripe degree for meeting production standard or technical conditions also during steady production, mature coefficient is 1.0; When ripe degree is quality when not yet stablizing, mature coefficient is 3.0; When ripe degree is preproduction or new first batch products, design or technique of going into operation when having major change and long-term breaks in production or production line that great change is arranged, mature coefficient is 10.
According to GaAs single-chip microwave integration circuit produce operative norm different, obtain described quality coefficient, the credit rating of GaAs single-chip microwave integration circuit is divided into A1、A
2、A
3、A
4、B
1、B
2、C
1、C
2。
Further specify below in conjunction with form, the crash rate of GaAs MMIC mainly is comprised of two parts: the crash rate λ relevant with chipdie, the crash rate λ relevant with encapsulation and external environment conditionpackage。
The crash rate λ relevant with chipdieMainly by chip complexity, channel temperature, application state, voltage stress, production technology, operation year number, produce the factor such as operative norm (quality coefficient) and decide. λdieUseful following formula represents:
λ
die＝C
1π
Tπ
Aπ
pπ
Lπ
Q
The crash rate λ relevant with encapsulation and external environment conditionpackageDecisive factor mainly be environment and encapsulation, and go into operation year number (mature coefficient) and production operative norm (quality coefficient) etc. also can have influence on the package failure rate, therefore, can be with λpackageBe expressed as:
λ
package＝C
3π
Eπ
Lπ
Q
So the crash rate of GaAs MMIC is:
λ
p＝λ
die+λ
package
That is: λp＝[C
1π
Tπ
Aπ
P+C
3π
E]π
Lπ
Q
In the formula,
λ
P---operational failure rate, 10-6/h；
π
E---environmental coefficient sees Table 1;
π
Q---quality coefficient sees Table 2;
π
L---mature coefficient sees Table 3;
π
T---temperature coefficient, its value depend on the average active device channel temperature T of GaAs MMICch，
π
TValue see Table 4;
C
1---the complexity crash rate sees Table 5;
C
3---encapsulation complexity crash rate sees Table 6;
π
A---GaAs MMIC application factor sees Table 7;
π
P---GaAs MMIC technological coefficient sees Table 8.
Table 1 environmental coefficient πE
| Environment | G B | G MS | G F1 | G F2 | G M1 | G M2 | M P | N SB | N S1 | |||||||
| π E | 1.0 | 1.5 | 2.4 | 6.5 | 6.3 | 11 | 6.8 | 7.5 | 4.5 | |||||||
| Environment | N S2 | N U | A IF | A UF | A IC | A UC | A RW | S F | M L | M F | ||||||
| π E | 10 | 14 | 15 | 20 | 10 | 13 | 19 | 1.2 | 32 | 15 | ||||||
Table 2 GaAs MMIC credit rating and quality coefficient πQ
| Credit rating | The quality requirement explanation | The quality requirement supplementary notes | π Q | |
| A | A 1 | Meet GJB 597A, and list the S level product of military electronic devices and components qualified products list (QPL) (QPL) in | Meet GJB 597-1988 and list the S level product of military electronic devices and components qualified products list (QPL) (QPL) in | - |
| A 2 | Meet GJB 597A, and list the B level product of military electronic devices and components qualified products list (QPL) (QPL) in | Meet GJB 597-1988 and list the B level product of military electronic devices and components qualified products list (QPL) (QPL) in | 0.08 | |
| A 3 | Meet GJB 597A, and list the B1 level product of military electronic devices and components qualified products list (QPL) (QPL) in | Meet GJB 597-1988 and list the B1 level product of military electronic devices and components qualified products list (QPL) (QPL) in | 0.13 | |
| A 4 | The III series products that meets GB/T 4589.1, or through the approved qualified II series products of the China Electronics Components Industry quality authentication committee | Press I, I that QZJ 840614～840615 " seven is special " technical conditions tissue is producedASeries products; The I, the I that meet former SJ 331AClass | 0.25 | |
| Continued 2 | ||||
| B | B 1 | The B that screens by the screening requirement of military standard2The credit rating product; The II series products that meets GB/T 4589.1 | Product by " 7905 " seven special Quality Control Technology agreement organizations productions; The II series products that meets former SJ 331 | 0.50 |
| B 2 | The I series products that meets GB/T 4589.1 | The III series products that meets former SJ 331 | 1.0 | |
| C | C 1 | - | The IV series products that meets former SJ 331 | 3.0 |
| C 2 | Low grade products | 10 | ||
Table 3 mature coefficient πL
| Maturity | Meet corresponding standard or technical conditions, the product of steady production | Quality is unstabilized product still | Preproduction or new first batch products of going into operation; On design or the technique major change is arranged; Long-term breaks in production or production line have great change |
| π L | 1.0 | 3.0 | 10 |
The π of table 4 GaAs MMIC circuitT
| T ch/℃ | π T | T ch/℃ | π T | T ch/℃ | π T | T ch/℃ | π T |
| 25 | 0.100 | 53 | 1.452 | 81 | 13.177 | 115 | 93.234 |
| 27 | 0.123 | 55 | 1.728 | 83 | 15.153 | 120 | 107.219 |
| 29 | 0.151 | 57 | 2.051 | 85 | 17.426 | 125 | 128.663 |
| 31 | 0.185 | 59 | 2.430 | 87 | 20.040 | 130 | 154.395 |
| 33 | 0.226 | 61 | 2.873 | 89 | 23.046 | 135 | 185.274 |
| 35 | 0.275 | 63 | 3.390 | 91 | 26.503 | 140 | 222.329 |
| 37 | 0.334 | 65 | 3.992 | 93 | 30.478 | 145 | 266.795 |
| 39 | 0.405 | 67 | 4.692 | 95 | 35.050 | 150 | 320.154 |
| 41 | 0.489 | 69 | 5.505 | 97 | 40.308 | 155 | 384.184 |
| 43 | 0.590 | 71 | 6.446 | 99 | 46.354 | 160 | 461.021 |
| 45 | 0.709 | 73 | 7.534 | 101 | 53.307 | 165 | 553.226 |
| 47 | 0.852 | 75 | 8.664 | 103 | 61.303 | 170 | 663.871 |
| 49 | 1.020 | 77 | 9.963 | 105 | 70.498 | 175 | 796.645 |
| 51 | 1.218 | 79 | 11.458 | 110 | 81.073 | - | - |
| Annotate: TchBe channel temperature. | |||||||
Table 5 GaAs mmic chip complexity crash rate C1Unit is 10-6/h
| Number of transistors NT | Operating frequency f/GHz | ||||
| f≤3 | 3＜f≤6 | 6＜f≤9 | 9＜f≤12 | f＞12 | |
| 1～3 | 0.274 | 0.340 | 0.371 | 0.393 | 0.412 |
| 4～6 | 0.279 | 0.349 | 0.382 | 0.406 | 0.425 |
| 7～9 | 0.284 | 0.354 | 0.388 | 0.413 | 0.434 |
| 10～11 | 0.285 | 0.359 | 0.394 | 0.419 | 0.441 |
| ≥12 | 0.288 | 0.362 | 0.399 | 0.425 | 0.446 |
Table 6 encapsulation complexity crash rate C3Unit is 10-6/h
| N P a | Sealing | Non-tight | |||||||
| Dual-in-line (DIP) encapsulation | Flat (FP) encapsulation | Grafting array (contain PGA, BGA and other) | (chip carrier) encapsulation is installed on the surface | The metal-back encapsulation | Dual-in-line (DIP) encapsulation | Flat (FP) encapsulation | Grafting array (contain PGA, BGA and other) | (chip carrier) encapsulation is installed on the surface | |
| 2 3 4 6 8 10 12 14 16 18 | - - 0.010 0 0.017 5 0.025 9 0.035 2 0.045 1 0.055 8 0.066 9 0.078 7 | - 0.003 7 0.006 3 0.013 2 0.022 4 0.033 7 0.047 0 0.062 3 0.079 6 0.098 7 | - - 0.017 4 0.028 3 0.040 0 0.052 3 0.065 1 0.078 3 0.091 9 0.105 9 | - - 0.037 2 0.060 5 0.085 5 0.111 7 0.139 1 0.167 3 0.196 4 0.226 2 | 0.001 6 0.003 2 0.005 3 0.010 0.017 1 0.025 1 0.034 2 0.044 4 0.055 7 0.068 1 | - - 0.013 0 0.022 7 0.033 7 0.045 7 0.058 7 0.072 5 0.087 0 0.102 3 | - 0.005 6 0.009 5 0.019 9 0.033 6 0.050 5 0.070 5 0.093 5 0.119 4 0.148 1 | - - 0.023 0 0.037 3 0.052 7 0.068 9 0.085 8 0.103 2 0.121 2 0.139 6 | - - 0.048 3 0.078 6 0.111 0 0.145 0 0.180 5 0.217 2 0.254 9 0.293 6 |
| Continued 6 | |||||||||
| 20 22 24 28 36 40 | 0.090 9 0.103 6 0.116 7 0.144 1 0.203 3 0.234 9 | 0.119 7 0.142 5 0.167 0 0.221 4 0.350 6 0.425 | 0.120 2 0.134 7 0.149 5 0.179 9 0.243 3 0.276 0 | 0.256 7 0.287 8 0.319 5 0.384 4 0.519 7 0.589 7 | 0.081 4 0.095 7 0.111 0 - - - | 0.118 2 0.134 6 0.151 7 0.187 3 0.264 3 0.305 4 | 0.179 5 0.213 7 0.250 6 0.332 2 0.525 9 0.637 7 | 0.158 4 0.177 6 0.197 1 0.237 2 0.320 7 0.363 9 | 0.333 2 0.373 5 0.414 6 0.498 9 0.674 5 0.765 4 |
| 48 | 0.301 6 | 1 0.59 3 3 | 0.343 6 | 0.734 0 | - | 0.392 0 | 0.890 0 | 0.452 9 | 0.952 6 |
| N P a | Sealing | Non-tight | |||||||
| Dual-in-line (DIP) encapsulation | Flat (FP) encapsulation | Grafting array (contain PGA, BGA and other) | (chip carrier) encapsulation is installed on the surface | The metal-back encapsulation | Dual-in-line (DIP) encapsulation | Flat (FP) encapsulation | Grafting array (contain PGA, BGA and other) | (chip carrier) encapsulation is installed on the surface | |
| 64 80 100 120 140 280 320 400 500 | 0.447 3 0.607 2 0.824 3 - - - - | 1.004 0 1.509 9 2.270 8 3.169 3 4.201 3 14.922 6 - - - | 0.485 2 0.634 2 0.828 9 1.031 6 1.241 3 2.851 7 3.347 3 4.375 1 5.718 4 | 1.036 6 1.354 9 1.770 9 2.204 0 2.651 8 6.092 3 7.151 0 - - | - - - - - - - - | 0.581 4 0.789 3 1.071 6 - - - - - - | 1.506 1 2.264 9 3.406 1 4.753 9 6.301 9 22.38 3 8 - - - | 0.639 6 0.836 0 1.092 7 1.359 9 1.636 2 3.759 1 4.412 3 5.767 1 7.538 0 | 1.345 4 1.758 4 2.298 4 2.860 5 3.441 7 7.907 0 9.281 1 12.13 0 9 - |
| aN PFor drawing terminal number. | |||||||||
Table 7 GaAs MMIC application factor πA
| Use | Small-power, switch, low noise | Power-type, driver |
| π A | 1.0 | 4.0 |
Table 8 GaAs MMIC technological coefficient πP
| Transistor arrangement | MESFET | HBT | HEMT |
| π P | 1.0 | 1.4 | 4.4 |
The custom that meets GJB/Z299C in the expression of GaAs single-chip microwave integration circuit reliability assessment, the form of employing product; Determining take the failure mode of GaAs single-chip microwave integration circuit and failure cause as the basis, take the physics of failure as the basis of each factor coefficient; Definite method that adopts " statistical mathematics " of factor of a model coefficient; In addition, in the reliability test of GaAs single-chip microwave integration circuit, adopted " RSM " method to carry out the combination of sample, guaranteed to obtain more data with a small amount of sample; Simultaneously, the thought of " contrast test and marginal test " has been adopted in test.
The present invention has considered the reliability difference of GaAs single-chip microwave integration circuit of reliability difference, the different connection form of the GaAs single-chip microwave integration circuit of the reliability difference of the GaAs single-chip microwave integration circuit of different transmission mode, different end pattern, consider more all sidedly the reliability difference of the GaAs single-chip microwave integration circuit of different structure and kind, basically covered the kind of present GaAs single-chip microwave integration circuit. The present invention provides criterion for crash rate level and the reliability assessment of GaAs single-chip microwave integration circuit, for determining the GaAs single-chip microwave integration circuit reliability index, carries out reliability of electronic equipment and estimates to provide foundation.
Claims (7)
1, a kind of reliability estimation method of GaAs single-chip microwave integration circuit is characterized in that, it comprises the steps:
(1) thus GaAs single-chip microwave integration circuit analyzed obtain the crash rate relevant with chip and the relevant crash rate with encapsulation and external environment condition;
(2) according to the described crash rate relevant with chip and with encapsulation and external environment condition the reliability standard of relevant crash rate sum assessment GaAs single-chip microwave integration circuit.
2, the reliability estimation method of GaAs single-chip microwave integration circuit as claimed in claim 1, it is characterized in that the described crash rate relevant with chip equals the product of complexity crash rate, temperature coefficient, application factor, technological coefficient, mature coefficient and the quality coefficient of chip.
3, the reliability estimation method of GaAs single-chip microwave integration circuit as claimed in claim 1, it is characterized in that the described crash rate relevant with encapsulation and external environment condition equals to encapsulate the product of complexity crash rate, environmental coefficient, mature coefficient and quality coefficient.
4, the reliability estimation method of GaAs single-chip microwave integration circuit as claimed in claim 2 is characterized in that, determines described temperature coefficient by accelerated life test.
5, the reliability estimation method of GaAs single-chip microwave integration circuit as claimed in claim 2, it is characterized in that, by technique qualification rate and chip area and total grid width relation, and in conjunction with the test data of accelerated life test, obtain described complexity crash rate.
6, the reliability estimation method of GaAs single-chip microwave integration circuit as claimed in claim 2, it is characterized in that, by collect, arrangement and analyze the mortality of carrying out the aging project of reliability screening at the line of production technology of the GaAs device of different capacity, obtain described application factor.
7, the reliability estimation method of GaAs single-chip microwave integration circuit as claimed in claim 2 is characterized in that, by analyzing the field failure rate level of the GaAs single-chip microwave integration circuit that contrasts multiple transistor technology, obtains described technological coefficient.
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| CN109935530A (en) * | 2018-10-31 | 2019-06-25 | 湘潭大学 | A kind of experimental method for ferroelectric thin film reliability assessment in ferro-electric device |
| CN109935530B (en) * | 2018-10-31 | 2023-05-12 | 湘潭大学 | Experimental method for evaluating reliability of ferroelectric thin film in ferroelectric device |
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