CN1847915A - Electrical characterization of interferometric modulators - Google Patents
Electrical characterization of interferometric modulators Download PDFInfo
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- CN1847915A CN1847915A CN 200510102801 CN200510102801A CN1847915A CN 1847915 A CN1847915 A CN 1847915A CN 200510102801 CN200510102801 CN 200510102801 CN 200510102801 A CN200510102801 A CN 200510102801A CN 1847915 A CN1847915 A CN 1847915A
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Abstract
Disclosed herein are methods and systems for testing the electrical characteristics of reflective displays, including interferometric modulator displays. In one embodiment, a controlled voltage is applied to conductive leads in the display and the resulting current is measured. The voltage may be controlled so as to ensure that interferometric modulators do not actuate during the resistance measurements. Also disclosed are methods for conditioning interferometric modulator display by applying a voltage waveform that causes actuation of interferometric modulators in the display.
Description
Technical field
Technical field of the present invention relates to MEMS (micro electro mechanical system) (MEMS).
Background technology
MEMS (micro electro mechanical system) (MEMS) comprises micromechanical component, driver and electronic component.Micromechanical component can adopt deposition, etching or other several portions that can etch away substrate and/or institute's deposited material layer maybe can add several layers and make with the micromachined technology that forms electricity and electromechanical assembly.One type MEMS device is called as interferometric modulator.Interferometric modulator can comprise the pair of conductive plate, one of them or the two all can be transparent whole or in part and/or be reflectivity, and can relative motion when applying a suitable electric signal.One of them plate can comprise a quiescent layer that is deposited on the substrate, and another plate can comprise a metal partion (metp) that separates by a clearance and this quiescent layer.Said apparatus is with a wide range of applications, and in this technology, utilizes and/or revises the characteristic of these types of devices so that its performance can be used for improving existing product and makes still undeveloped at present new product will be rather useful.Be to guarantee high-quality, in manufacture process, can use the operation that is used to test these MEMS devices accurately, method easily.These methods need further exploitation.
Summary of the invention
System of the present invention, method and device all have many aspects, and arbitrary single aspect all can not determine its desired characteristic separately.Now, its main characteristic is carried out brief description, this not delimit the scope of the invention.Checking this argumentation, especially reading title for after the part of " embodiment ", how people provides the advantage that is better than other display device if can understanding feature of the present invention.
One embodiment comprises the method for the resistance between each conductive lead wire in a kind of measurement one display, at least two conductive lead wire two ends that this method is included in the described display apply a controlled voltage, wherein said conductive lead wire is used to drive the display element in the described display, and measures the electric current that flows through lead-in wire in response to the voltage that is applied.
Another embodiment comprises a kind of method of test one interferometric modulator display, and this method comprises: at least two conductive lead wire two ends at display apply a controlled voltage, and wherein said conductive lead wire is used to drive the interferometric modulator in the described display; The electric current of described lead-in wire is flow through in measurement in response to described voltage; And according to described measurement described display is identified as and has as the required electrical characteristics of a display.
Another embodiment comprises a kind of method of adjusting one interferometric modulator display, this method applies a voltage waveform to described display before being included in and using display, wherein said voltage waveform has a height to the amplitude that is enough to encourage at least one interferometric modulator in the described display, and wherein said voltage waveform makes its interferometric modulator in described display that one clean zero charge is provided.
Another embodiment comprises the method for the short circuit in a kind of reparation one display, this method is included at least two conductive lead wire two ends that wherein measured short circuit and applies a voltage, and described voltage is enough at least one display element of encouraging described conductive lead wire to pass.
Description of drawings
Fig. 1 is an isometric drawing, it shows the part of an embodiment of an interferometric modulator display, wherein one of one first interferometric modulator removable reflection horizon is in an off-position, and a removable reflection horizon of one second interferometric modulator is in an excited target position.
Fig. 2 is a system block diagram, and it shows that one comprises an embodiment of the electronic installation of one 3 * 3 interferometric modulator displays.
Fig. 3 is the removable mirror position of an exemplary embodiment of interferometric modulator shown in Figure 1 and the graph of a relation of the voltage that applies.
Fig. 4 is one group of synoptic diagram that can be used for driving the row and column voltage of interferometric modulator display.
Fig. 5 A and Fig. 5 B show an exemplary sequential chart that can be used for writing to 3 * 3 interferometric modulator displays shown in Figure 2 the row and column signal of a frame of display data.
Fig. 6 A is the sectional view of a device shown in Figure 1.
Fig. 6 B is a sectional view of an alternate embodiment of an interferometric modulator.
Fig. 6 C is a sectional view of another alternate embodiment of an interferometric modulator.
Fig. 7 is a process flow diagram, and it shows for example method of the electrical characteristics of display such as interferometric modulator display of a kind of measurement.
Fig. 8 one has a synoptic diagram of the interferometric modulator array of bus-bar, detection welding pad and shorting bar.
Fig. 9 one has another synoptic diagram of the interferometric modulator array of bus-bar, detection welding pad and shorting bar.
Figure 10 A one shows that one is used to regulate alternation rectangular voltage waveform graphic of an interferometric modulator array.
Figure 10 B one shows that one is used to regulate triangle voltage waveform graphic of interferometric modulator array.
Embodiment
Below describe in detail and relate to some embodiments of the invention.But, the present invention can implement by being permitted different ways.In this explanation, can be with reference to accompanying drawing, in the accompanying drawings, identical parts use identical number-mark from start to finish.Find out easily that according to following explanation the present invention can be used for display image-no matter be dynamic image (for example video) or still image (for example rest image) in arbitrary configuration, no matter be character image or picture-device in implement.More specifically, the present invention can implement in inferior numerous kinds of electronic installations or is associated with these electronic installations for example (but being not limited to): mobile phone, wireless device, personal digital assistant (PDA), handheld computer or portable computer, gps receiver/omniselector, camera, the MP3 player, video camera, game machine, wrist-watch, clock, counter, TV monitor, flat-panel monitor, computer monitor, automotive displays (for example stadimeter display etc.), driving cabin control device and/or display, video camera scenery display (for example rear view camera display of vehicle), electronic photo, electronics billboard or label, projector, building structure, packing and aesthetic structures (for example display image on a jewelry).The MEMS device that has similar structures with MESE device described herein also can be used for non-display application, for example is used for electronic switching device.
Interferometric modulator display may need to test described display and whether have some operation characteristic after making, to determine whether described display is fit to use or to diagnose the manufacturing defect of any inherence.Need the characteristic of test to comprise electrical characteristics, for example the resistance of the conductive lead wire in the display.The open circuit that measures in the conductive lead wire promptly indicates this lead-in wire to have fault.Measure the chip that the short circuit between the adjacent conductive lead-in wire is then indicated described lead-in wire to contact with each other or occurred conducting electricity between described lead-in wire.Therefore, this paper discloses the method and system of the electrical characteristics be used to test interferometric modulator display.
Show an interferometric modulator display embodiment who contains an interfere type MEMS display element among Fig. 1.In these devices, pixel is in bright state or dark state.Under bright (" opening (on) " or " opening (open) ") state, display element reflexes to the user with most of incident visible light.Be in dark (" closing (off) " or " closing (closed) ") state following time, display element reflects the incident visible light to the user hardly.Decide on different embodiment, can put upside down the light reflectance properties that " on " reaches " off " state.The MEMS pixel can be configured to mainly and reflects under selected color, also can realize colored the demonstration except that black and white.
Fig. 1 is an isometric drawing, and it shows two adjacent pixels in a series of pixels of a visual displays, and wherein each pixel comprises a MEMS interferometric modulator.In certain embodiments, an interferometric modulator display comprises a row/column array that is made of these interferometric modulators.Each interferometric modulator comprises a pair of reflection horizon, and this is positioned to each other to have a variable-sized optical resonator at a distance of a variable and controlled distance at least to form one to the reflection horizon.In one embodiment, one of them reflection horizon can be moved between the two positions.Be referred to herein as on the primary importance of release conditions, the local reflex layer that the position of this displaceable layers distance one is fixed is far away relatively.On the second place, the position of this displaceable layers is more closely near this local reflex layer.Decide position according to removable reflection horizon, from the incident light of this two layers reflection can with mutually long or mutually the mode of disappearing interfere, thereby form the mass reflex or the non-reflective state of each pixel.
The pixel array portion that shows in Fig. 1 comprises two adjacent interferometric modulator 12a and 12b.In the interferometric modulator 12a in left side, demonstration one movably high reflection layer 14a is in an off-position, and this off-position is apart from fixing local reflex layer 16a one preset distance.In the interferometric modulator 12b on right side, demonstration one movably high reflection layer 14b is in an excited target position, and this excited target position is near fixing local reflex layer 16b.
Fixed bed 16a, 16b conduct electricity, the part is transparent and local is reflectivity, and can make by the layer that for example deposits one or more respectively do for oneself chromium and tin indium oxides on a transparent substrates 20.Described each layer is patterned into parallel band, and can form the column electrode in the display device, as further specifying hereinafter.Displaceable layers 14a, 14b can form by one or more depositing metal layers that is deposited on pillar 18 tops (and column electrode 16a, 16b quadrature) and and be deposited on the series of parallel band that the middle expendable material between the pillar 18 constitutes.After expendable material was etched, these deformable metal levels separated with the air gap 19 of the metal level of fixing by a regulation.These deformable layer can use one to have high conductivity and reflexive material (for example aluminium), and those bands can form the row electrode in the display device.
When not applying voltage, chamber 19 remains between a layer 14a, the 16a, and deformable layer is in the mechanical relaxed state shown in pixel 12a among Fig. 1.Yet after a selected row and column applies potential difference (PD), the capacitor that forms in the respective pixel place of described row and column electrode intersection becomes charged state, and electrostatic force pulls to these electrodes together.If voltage is enough high, then displaceable layers generation deformation, and be forced on the fixed bed (can on this fixed bed, deposit a dielectric material (not shown in this Figure), preventing short circuit, and the control separation distance), shown in the pixel 12b on the right side among Fig. 1.Regardless of the polarity of the potential difference (PD) that is applied, the behavior is all identical.Like this, used row/row encourage similar in many aspects in the row of the non-relatively reflective pixel state of may command reflection/row excitation and traditional LCD and other display techniques.
Fig. 2 to Fig. 5 shows the exemplary methods and the system that use an interferometric modulator array in a display application.Fig. 2 is a system block diagram, and this figure shows that one can embody an embodiment of the electronic installation of each side of the present invention.In this exemplary embodiment, described electronic installation comprises a processor 21, and it can be any general purpose single-chip or multicore sheet microprocessor, for example ARM, Pentium
, Pentium II
, PentiumIII
, Pentium IV
, Pentium
Pro, 8051, MIPS
, Power PC
, ALPHA
, or any special microprocessor, for example digital signal processor, microcontroller or programmable gate array.According to convention in the industry, processor 21 can be configured to carry out one or more software modules.Except that carrying out an operating system, also this processor can be configured to carry out one or more software applications, comprise web browser, telephony application, e-mail program or any other software application.
In one embodiment, processor 21 also is configured to communicate with an array controller 22.In one embodiment, this array control unit 22 comprises a horizontal drive circuit 24 and the column drive circuit 26 that signal is provided to a pel array 30.The xsect of the array shown in Fig. 1 illustrates with line 1-1 in Fig. 2.For the MEMS interferometric modulator, OK/the row excitation protocol can utilize the hysteresis property of these devices shown in Figure 3.It may need the potential difference (PD) of (for example) 10 volts to make a displaceable layers be deformed into actuated state from release conditions.Yet, when described voltage when this value reduces, reduce when being back to below 10 volts at described voltage, described displaceable layers keeps its state.In the exemplary embodiment of Fig. 3, before voltage drop was low to moderate below 2 volts, displaceable layers can not discharge fully.Therefore, in example shown in Figure 3, exist one to be approximately the voltage range that 3-7 lies prostrate, exist one to apply voltage window in this voltage range, described device is stabilized in and discharges or actuated state in this window.Be referred to as " lag windwo " or " stability window " in this article.For an array of display with hysteresis characteristic shown in Figure 3, OK/the row excitation protocol can be designed so that to be expert at during the gating, the pixel that is energized is applied about 10 a volts voltage difference to selected in current, and to d/d pixel being applied one near 0 volt voltage difference.After gating, it is poor to apply about 5 a volts steady state voltage to pixel, and gating makes its residing any state so that its maintenance is expert at.After writing, in this example, each pixel is all born a potential difference (PD) that is in the 3-7 volt " stability window ".This characteristic makes pixel design shown in Figure 1 be stabilized in an existing foment or release conditions under the voltage conditions in identical applying.Because no matter each pixel of interferometric modulator is in foment or release conditions, it in fact all is one by described fixing and capacitor that mobile reflection horizon constituted, so this steady state (SS) is kept under can the voltage in lag windwo and consumed power hardly.If the current potential that is applied is fixed, then there is not electric current to flow into pixel basically.
In the typical case uses, can be by determining that according to one group of desired actuated pixels in first row one group of row electrode forms a display frame.After this, a horizontal pulse is put on the electrode of the 1st row, thereby encourage the pixel corresponding with determined alignment.After this, determined one group of row electrode is become corresponding with desired one group of actuated pixels in second row.After this, with a pulse put on the 2nd the row electrode, thereby according to determined row electrode encourage the 2nd the row in respective pixel.The pixel of the 1st row is not subjected to the influence of the pulse of the 2nd row, thereby the state that keeps it to set at the impulse duration of the 1st row.The property mode repeats above-mentioned steps to the row of whole series in order, to form described frame.Usually, repeating this process by the speed with a certain desired frame number/second refreshes and/or upgrades these frames.Also have a variety of row and the row electrodes that are used to drive pel array to be known by people, and can use with the present invention with the agreement that forms display frame.
Fig. 4 and Fig. 5 show a kind of possible excitation protocol that is used for forming a display frame on 3 * 3 arrays shown in Figure 2.Fig. 4 shows one group of possible row and column voltage level of can be used for having the pixel of hysteresis curve shown in Figure 3.In the embodiment of Fig. 4, encourage a pixel to comprise row accordingly be set to-Vbias, and will go accordingly be set to+Δ V-its can correspond respectively to-5 volts and reach+5 volts.Discharge pixel then to be set to by being listed as accordingly+Vbias and will going accordingly is set to identical+Δ V, form one 0 volts potential difference (PD) at described pixel two ends thus realizes.In the row of 0 volt of those wherein capable voltages maintenance, pixel is stable at its initial residing state, and is in+V with these row
BiasStill-V
BiasIrrelevant.Equally as shown in FIG. 4, should be appreciated that, can use polarity and above-mentioned opposite polarity voltage, for example encourage a pixel to comprise and be set to+V being listed as accordingly
Bias, and will go accordingly and be set to Δ V.In this embodiment, discharging pixel is to be set to-V by being listed as accordingly
BiasAnd will go accordingly and be set to identical-Δ V, form one 0 volts potential difference (PD) at described pixel two ends thus and realize.
Fig. 5 B is the sequential chart of a series of row of demonstration and column signal, and those signals put on 3 * 3 arrays shown in Figure 2, and it will form the demonstration shown in Fig. 5 A and arrange that wherein actuated pixels is non-reflectivity.Before writing the frame shown in Fig. 5 A, pixel can be in any state, and in this example, all row all are in 0 volt, and all row all be in+5 volts.Under these institute's voltages that apply, all pixels are stable at its existing actuated state or release conditions.
In the frame shown in Fig. 5 A, pixel (1,1), (1,2), (2,2), (3,2) and (3,3) are encouraged.For realizing this effect, during one " line time " of the 1st row, the 1st row and the 2nd row are set at one 5 volts, the 3rd row are set at+5 volts.This can not change the state of any pixel, because all pixels all remain in the stability window of 3-7 volt.After this, rise to 5 volts of pulses that are back to 0 volt that descend again then by one from 0 volt and come gating the 1st row.Actuate pixel (1,1) and (1,2) and discharge pixel (1,3) thus.Other pixels in the array are all unaffected.For the 2nd row is set at desired state, the 2nd row are set at-5 volts, the 1st row and the 3rd row are set to+5 volts.After this, apply identical strobe pulse with actuate pixel (2,2) and discharge pixel (2,1) and (2,3) to the 2nd row.Equally, other pixels in the array are all unaffected.Similarly, by the 2nd row and the 3rd row are set at-5 volts, and be listed as the 1st be set at+5 volts to the 3rd capable the setting.The strobe pulse of the 3rd row is set at the state shown in Fig. 5 A with the 3rd row pixel.After writing incoming frame, the row current potential is 0, and the row current potential can remain on+5 or-5 volts, and after this demonstration will be stable at the layout shown in Fig. 5 A.Should be appreciated that, can use identical programs the array that constitutes by tens of or hundreds of row and columns.The timing, order and the level that should also be clear that the voltage that is used to implement the row and column excitation can alter a great deal in above-described General Principle, and above-mentioned example only is exemplary, and any actuation voltage method all can be used with the present invention.
Detailed structure according to the interferometric modulator of above-mentioned principle operation can be ever-changing.For example, Fig. 6 A-6C shows three kinds of different embodiment of moving lens structure.Fig. 6 A is a sectional view embodiment illustrated in fig. 1, wherein deposition one strip of metal material 14 on the support member 18 that quadrature extends.In Fig. 6 B, movably reflecting material 14 only is on the tethers 32 at corner and is attached to support member.In Fig. 6 C, movably reflecting material 14 is suspended on the deformable layer 34.Because the structural design and the material therefor of reflecting material 14 can be optimized aspect optical characteristics, and the structural design of deformable layer 34 and material therefor can be optimized aspect the desired mechanical property, so this embodiment has some advantages.In many open files, comprise that for example No. 2004/0051929 U.S. discloses in the application case, the production of various dissimilar interference devices has been described.Can use the known technology of a variety of people to make said structure, this comprises a series of material depositions, patterning and etching step.
Electrical characterization
In certain embodiments, be provided for testing the method for the electrical characteristics of an interferometric modulator display.In some cases, measure the resistance at the conductive lead wire two ends in the display.Resistance measurement can indicate during manufacture process conductive lead wire whether correctly to form and display in whether have any chip changing the electrical characteristics of display.For example, people expect that each independent conductive lead wire (for example each row or column conductive lead wire) two ends have low resistance.There is open circuit in the lead-in wire by higher indication of the resistance of an independent conductive lead wire.People also expect to have high resistance between the adjacent conductive lead-in wire.For example, row and row have low resistance between the conductive lead wire and can indicate in described row and the capable formed interferometric modulator element of crossover sites and have short circuit.Similarly, have between the adjacent column or row conductive lead wire low resistance can indicate these the lead-in wire between have short circuit.Short circuit may be to cause by the manufacturing mistake that causes conductive material to fuse together or by the electrically-conductive debris between the lead-in wire.
The electrical characteristics of considering display can be because of interferometric modulator element different these facts of excited target whether, measure in the interferometric modulator display resistance in the conductive lead wire and comprise and determine described resistance.At typical ohmer-for example be generally used in those ohmers of testing liquid crystal display, the voltage that is used to measure that is applied can change to some extent.Correspondingly, described voltage can be increased to the level that is enough to the interferometric modulator in the excitation display device, and it can produce the different measurement result of measurement result that is not obtained during excited target with interferometric modulator.Therefore, in one embodiment, when being in not actuated state at interferometric modulator, applying a controlled voltage and measure consequent electric current subsequently at the lead-in wire two ends and come measuring resistance, this is called coercive voltage/measurement electric current (FVMI) technology.By applying a controlled voltage, the excitation of may command interferometric modulator.In one embodiment, above-mentioned resistance measurement can use a Keithly 6517 high resistance meters to carry out.
Fig. 7 is a process flow diagram, and it shows the method for the resistance between the conductive lead wire in a kind of measurement one display (a for example interferometric modulator display).Difference on specific embodiment is decided, and can add or can delete some step those steps shown in Fig. 7.In addition, the difference of visual application and rearrange the order of step.In step 200, at least two conductive lead wire two ends in display apply a controlled voltage.In one embodiment, a plurality of leads is connected with external electronic, and which lead-in wire to apply controlled voltage to be to be determined by external electronic.For example, lead-in wires all in the display can be coupled to the external electronic that comprises relay, it is not the leaded controlled voltage that applies in display that relay can be used for selectively.In certain embodiments, external electronic can be used for one or more lead-in wire short circuit together.In one embodiment, when an interferometric modulator is just being accepted to test, make the controlled voltage that is applied keep enough low and do not encouraged so that do not have interferometric modulator.For example, described voltage can remain on+/-1 volt in.Next, in step 202, measure consequent electric current, after this can determine resistance by conductive lead wire.In one embodiment, measure the resistance at one or more conductive lead wire two ends, for example apply the resistance that a voltage is measured delegation or row two ends by opposite end to row or column.This measurement makes people can determine whether there is open circuit in described row or column.In another embodiment, measuring resistance between delegation and row.This measurement makes people can determine whether the interferometric modulator that is arranged in the row and column crossover sites between this row and column exists a short circuit.In one embodiment, resistance be expert at less than 100M Ω indication and be listed as between have unacceptable conducting.In another embodiment, resistance be expert at less than 50M Ω indication and be listed as between have unacceptable conducting.In another embodiment, measure resistance between adjacent row and/or the row.This measurement makes people can determine whether there is short circuit between adjacent row or column.In one embodiment, there is unacceptable conducting less than 10M Ω indication in resistance between adjacent row and row.In another embodiment, there is unacceptable conducting less than 1M Ω indication in resistance between adjacent row and row.
In certain embodiments, can carry out resistance measurement to many conductive lead wires simultaneously.For example, can measure resistance between all adjacent row simultaneously.If less than a predetermined threshold, then can optionally using follow-up test to discern which row-line lead, the resistance of the every lead-in wire that records by this way comprises short circuit.Similarly, the resistance between all adjacent column lead-in wires can be measured simultaneously, or row-Lie resistance can be measured simultaneously by pixel element.In certain embodiments, the display of acceptance test is a color monitor.In this case, the resistance between the adjacent legs can comprise the resistance between the lead-in wire of measuring the sub-pixel be used to drive different colours, the resistance between for example red sub-pixel lead-in wire and green and/or blue subpixels go between.Correspondingly, in certain embodiments, the resistance of measuring between the adjacent column lead-in wire can comprise three independently measurements, i.e. red lead wire-blueness lead-in wire, blue lead-in wire-green pigtail and red lead wire-green pigtail.
In certain embodiments, described controlled voltage is a time variant voltage waveform in a period of time.For example, in certain embodiments, apply an AC waveform.One with a certain constant value time variant voltage waveform when centrosymmetric can be used for guaranteeing to provide to the net charge of display element serve as zero.For example, when applying described voltage to row or column and be positioned at the short circuit of display element of described row-Lie crossover sites by one to measure, can apply one about 0 volt or the symmetrical voltage waveform of a bias voltage (for example being to obtain the required voltage of zero charge), to guarantee not having electric charge to accumulate in the display element at test period in a display element.
In one embodiment, measuring resistance under various polarity respectively.Relatively the resistance that records under opposite polarity can be checked the quality of described display.For example, in interferometric modulator display, drive scheme can comprise and applies the voltage of two kinds of polarity as mentioned above.Correspondingly, it is similar to be desirably in the electrical characteristics of display under two kinds of polarity.In addition, the resistance of measuring under two kinds of polarity can provide an inspection, is because of noise or because of due to the actual resistance to determine institute's probe value.For example, if described resistance is very high, then only can measure noise.If the polarity of measured electric current reindexing not then can show and only detect noise when applying the reversal of poles of voltage making.
Can optionally use resistance measurement to discern displaying appliance has as the required electrical characteristics of a display.Therefore, for example, proceed to the step 204 among Fig. 7, with the quantity and the predetermined threshold comparison of resistivity measurements or short circuit and/or open circuit.If measurement result or quantity in threshold value, then can proceed to step 206 described display is used as a display.If measurement result or quantity not in threshold value, then can be thought described display defectiveness and being abandoned in step 208.During display was made, this test can be used for the quality control purpose.In certain embodiments, during manufacture the display sampling of manufacturing is tested so that reflect the quality of a collection of or many batches of displays.
In other embodiments, resistivity measurements can be used for discerning the mistake in the manufacturing.For example, resistivity measurements can be used for accurately location manufacturing mistake.If repeat to record the accurately located position (for example) of mistake at the same position place of different displays, then can show to exist and make mistake by the short circuit of a pixel.This information can be used for the defective in calibration equipment or the program.
In certain embodiments, resistivity measurements can be used for monitoring the result of some manufacture process.For example, resistivity measurements can be used for monitoring the variation of film parameter (for example thickness and width dimensions).
In certain embodiments, the exact position of short circuit or open circuit can be determined by a traditional decision-tree.For example, can be at the first order place of decision tree to leaded the measurement.If there is short circuit in the resistance that records indication in the somewhere of display, then can test the row or column lead-in wire of half subsequently, if in the first half, do not detect short circuit or open circuit, then again second half is tested subsequently.By this method, can make location of fault be contracted to half of display.Can a similar mode continue this process, to dwindle location of fault, until accurately identifying fault by single row and/or row.In other embodiments, but independent measurement each the row and/or row combinations determine location of fault.
In other embodiment, in a display, can comprise the bypass structure that allows to walk around one or more pixels.Like this, for example, if there is short circuit in resistivity measurements indication in a pixel position, then can by activate one around described location of pixels bypass structure capable in described pixel place parallel conductance and the row lead-in wire walk around described pixel, thus described bad pixel electricity is isolated.Correspondingly, in one embodiment, resistance measurement program for example as herein described is used to provide about using a suitable bypass structure to walk around which pixel of display or the indication in zone.
The electrical measurement structure
In certain embodiments, suitable conductive structure is situated between is connected to an interferometric modulator array, be beneficial to the carrying out electricity and the electrical-optical of described array are characterized and test.In an embodiment shown in Figure 8, row and column lead-in wire 400 can be connected to one or more bus-bar 410, and bus-bar 410 is connected to one or more detection welding pads 420 again.Row and column lead-in wire 400 can be corresponding to the row and column band shown in (for example) Fig. 5 A.Bus-bar 410 is electrically connected all and is connected to the lead-in wire of bus-bar, is beneficial to the voltage of controlling all these lead-in wires simultaneously thus.People use a short bar 430 with all lead-in wire short circuits together during may also being desirably in processing.Short bar 430 can remove at electricity and/or electrical-optical test reach.In one embodiment, staggered row and column lead-in wire 400 is connected to identical bus-bar 410 (being interdigital formula) as shown in Figure 8, to realize aforesaid adjacent lines-row or column-Lie resistance measurement.Described herein " OK " is meant and substrate adjacent conductive line (as the transparent conductor line).Described herein " row " are meant the conductor wire that is associated with mirror movably.In other embodiments, can use the alternative arrangement of short bar and detection welding pad.For example, provide detection welding pad 510 (for example detection welding pad L1-L2, L3-L4, L7-L8 and L5-L6) on the opposite end that is arranged in identical row and column among Fig. 9.The layout of bus-bar 520 and detection welding pad 530 also can be used for testing respectively the zones of different of display.When an interferometric modulator display is a color monitor, can be configured to make the sub-pixel (promptly being designed to reflect the interferometric modulator of a specific color) of different colours to drive respectively bus-bar and detection welding pad.After test, removable described bus-bar and detection welding pad are so that active region (interferometric modulator array) can be included in desired user encapsulates.In an alternate embodiment, probe is contacted with each lead-in wire respectively, rather than pass through detection welding pad.In this embodiment, can use external electronic together, so that measure the resistance at a plurality of leads two ends simultaneously with a plurality of leads short circuit.Technician in the industry will know multiple suitable structures and the technology that can be used for interferometric modulator array Jie is connected to an electric resistance measuring apparatus.
In one embodiment, use the resistance of for example measuring single file and/or single-row line two ends (for example L1-L2, L3-L4, L7-L8 and L5-L6 two ends) respectively in the structure described in Fig. 8 and Fig. 9.Resistance is excessive indicates described row or column line to break, and indication can't be carried out matrix addressing at least a portion of described row or column thus.In one embodiment, for example use the structure measurement described in Fig. 8 and Fig. 9 capable-row and/or Lie-Lie resistance.If row and/or classify interdigital formula as, then the resistance measurement between adjacent lines and/or the row will realize the measurement (for example R1-R2 in Fig. 8 or C1-C2 two ends measurement) to leakage of current.In certain embodiments, if total row-row or column-Lie resistance is low excessively, but then adjacent row-row or column-Lie resistance is respectively organized in independent measurement.In one embodiment, measure row-Lie resistance.This measurement can be by measuring short circuit all of all row and short circuit be listed as between the resistance of (for example in Fig. 8 between the C1 and C2 of the R1 of short circuit and R2 and short circuit) carry out.Resistance cross low can indicate be expert at and be listed as between have short circuit.
Interferometric modulator is regulated
In one embodiment, can make the interferometric modulator display that finishes, improve the performance of described display by preconditioning one.Described preconditioning can realize by apply a voltage that is enough to the interferometric modulator element in the excitation display device to display.just make finish after, the voltage in the time of can changing interferometric modulator and be subjected to encouraging is until reaching a steady state condition.Therefore, preconditioning can make movably that interferometric modulator element meets with stresses, so that obtain a stable state or near the response of stable state when being subjected to encouraging.In addition, such preconditioning can be by vaporizing electrically-conductive debris to eliminate the instantaneous short-circuit between the conductive lead wire.In certain embodiments, preconditioning can show undiscovered defective before preconditioning.Therefore, for example, can be before preconditioning and all carry out aforesaid resistance measurement afterwards.
In one embodiment, the preconditioning voltage waveform is applied to basic all elements in the interferometric modulator display simultaneously.By this mode, can make each element be subjected to stress and adjusting identically, so that the demonstration of each element response is identical, thereby reduce the appearance of ghost effect.
In one embodiment, an amplitude is enough to encourage the voltage waveform of interferometric modulator be applied to display.Described voltage can be applied to simultaneously all interferometric modulators (for example R1 and the R2 by in Fig. 8, being shorted to ground and be shorted to the C1 of a waveform generator and C2 between apply described voltage) or be applied to a subclass of described interferometric modulator.In one embodiment, can use one to guarantee to provide a clean zero charge for centrosymmetric voltage waveform to display element with a certain constant value.For example, can apply one guarantees not have electric charge to accumulate in the display element with 0 volt or a bias voltage (for example in a display element for obtaining the required voltage of zero charge) for centrosymmetric voltage waveform.
In one embodiment, voltage waveform comprises the square waveform pulse of an alternation.Figure 10 A shows so a kind of possible voltage waveform.Can apply a series of square waves with the amplitude 600 that is enough to encourage described interferometric modulator.So when voltage was in positive amplitude 600 or negative amplitude 602, interferometric modulator was encouraged.When voltage was in bias potential 604, interferometric modulator was in not actuated state.Before the reversal of poles of the voltage that is applied, each square waveform can have width 606 (for example 5 milliseconds).A series of such alternation square waveforms can have width 608 (for example 0.5 second).After applying this order, can make described voltage keep the time 610 (for example 0.5 second) at bias potential 604 places.Therefore, the result of the waveform among Figure 10 A is the interferometric modulator following sequence of states of experience that will circulate: the time is 608 actuated state, is to be 610 not actuated state the time subsequently.During by driving interferometric modulator in an actuated state, making waveform is that the center symmetry also changes amplitude rapidly between positive pole and negative pole with bias voltage 604, can not gather net charge in interferometric modulator.Technician in the industry will know the multiple version of this waveform.For example, can change the time period 606,608 and 610 to obtain the different frequency of driving pulse (for example by the change time 608 and/or 610) and polar impulse (for example by the change time 606).In different embodiment, excitation frequency can be at least about 0.1Hz, 0.5Hz, 1Hz, 10Hz, 50Hz, 100Hz, 500Hz or 1kHz.In different embodiment, the reversal frequency can be at least about 100Hz, 1kHz, 5kHz, 10kHz, 50kHz, 100kHz, 500kHz or 1MHz.In addition, in certain embodiments, apply single excitation waveform with alternating polarity (for example only time period 608).
In another embodiment, voltage waveform comprises a triangular waveform.Figure 10 B shows so possible waveform.The amplitude 650 of triangular waveform is enough high, so that interferometric modulator was encouraged before reaching amplitude.In one embodiment, use the amplitude that is approximately higher than required driving voltage 10%.Described interferometric modulator will voltage arrive by interferometric modulator as the bias voltage 652 at center before de-energisation.In different embodiment, the frequency of triangular waveform can be at least about 0.1Hz, 0.5Hz, 1Hz, 10Hz, 50Hz, 100Hz, 500Hz or 1kHz.
Technician in the industry will know the multiple possible excitation voltage waveform that can be used for the preconditioning interferometric modulator.Therefore, this disclosure is not limited only to have the rectangle and the triangular waveform of above-mentioned characteristic.
In certain embodiments, different waveforms is combined to form in order a more complicated waveform string.For example, can make up above-mentioned triangle and square waveform in order.In one embodiment, triangular waveform is applied a very first time section (for example about 1 minute), apply a plurality of square waveform sequences (for example each about 1 minute, and amplitude increases progressively) then, and then apply second triangular waveform.This order can repeat arbitrarily time or change to generate the waveform combination of any amount.Technician in the industry will know that multiple other can apply voltage waveform and the waveform combination that is used for regulating the display interferometric modulator element.
In different embodiment, the variation of preconditioning voltage waveform comprises the amplitude that changes the time span that applies a specific waveforms, the frequency that changes waveform and change waveform.
In certain embodiments, if electrical characterization for example mentioned above indicates an interferometric modulator display unsatisfactory, then can adopt to regulate and improve described characteristic.For example, can eliminate short circuit measured during electrical characterization by regulating.Therefore, in one embodiment, before regulating and all carry out electrical characterization afterwards, to determine whether having proofreaied and correct arbitrary fault characteristic by adjusting.
Although describe the present invention according to embodiment and example, yet should be appreciated that, can make various modification, this does not deviate from spirit of the present invention.Correspondingly, the present invention only is subject to following claims.
Claims (38)
1, a kind of method of test one interferometric modulator display, it comprises and uses a coercive voltage/measurement current technique to measure in the described display resistance between at least two conductive lead wires, wherein said conductive lead wire is used to drive the display element in the described display, and the voltage that is applied during described coercive voltage/measurement current technique is lower than one for encouraging the required voltage of described display element.
2, the method for claim 1, it further comprises according to described measurement discerns a short circuit between described at least two conductive lead wires.
3, the method for claim 1, it further comprises according to described measurement discerns a open circuit between described at least two conductive lead wires.
4, the method for claim 1, wherein said coercive voltage are applied between the adjacent conductive lead-in wire row.
5, the method for claim 1, wherein said coercive voltage are applied between the adjacent conductive lead-in wire row.
6, the method for claim 1, wherein said coercive voltage is applied between the opposite end of one or more conductive lead wire row or column.
7, the method for claim 1, wherein said coercive voltage are applied between the capable and row of the conductive lead wire of overlapping.
8, the method for the resistance between the conductive lead wire in a kind of measurement one MEMS display, it comprises:
At least two conductive lead wire two ends in described display apply a controlled voltage, and wherein said conductive lead wire is used to drive the display element in the described display;
Measurement applies voltage and flows through the electric current of described lead-in wire in response to described; And
Determine resistance according to described current measured.
9, method as claimed in claim 8, wherein said reflected displaying device comprises interferometric modulator.
10, method as claimed in claim 9, the wherein said voltage that applies is lower than one for encouraging the required voltage of one or more interferometric modulators in the described display.
11, method as claimed in claim 10, the wherein said institute voltage that applies is time variant voltage waveform in a period of time.
12, method as claimed in claim 11, the time variant voltage waveform is a sinusoidal voltage waveform when wherein said.
13, method as claimed in claim 11, the interferometric modulator of time variant voltage in described display provides a clean zero charge when wherein said.
14, method as claimed in claim 8, it further comprises according to described measurement discerns a short circuit between described at least two conductive lead wires.
15, method as claimed in claim 8, it further comprises according to described measurement discerns a open circuit between described at least two conductive lead wires.
16, method as claimed in claim 8, wherein said controlled voltage are applied between the adjacent conductive lead-in wire row.
17, method as claimed in claim 8, wherein said controlled voltage are applied between the adjacent conductive lead-in wire row.
18, method as claimed in claim 8, wherein said controlled voltage is applied between the opposite end of one or more conductive lead wire row or column.
19, method as claimed in claim 8, wherein said controlled voltage are applied between the capable and row of the conductive lead wire of overlapping.
20, a kind of method of test one interferometric modulator display, it comprises:
At least two conductive lead wire two ends in described display apply a controlled voltage, and wherein said conductive lead wire is used to drive the interferometric modulator in the described display;
The electric current of described lead-in wire is flow through in measurement in response to described voltage; And
Discerning described display according to described measurement is to have as the required electrical characteristics of a display.
21, method as claimed in claim 20, wherein said identification comprise the short circuit of surveying a no more than predetermined quantity between the conductive lead wire.
22, method as claimed in claim 20, wherein said identification comprise the open circuit of surveying a no more than predetermined quantity between the conductive lead wire.
23, a kind of method of adjusting one interferometric modulator display, it applies a voltage waveform to described display before being included in and using described display, wherein said voltage waveform has a height to the amplitude that is enough to encourage at least one interferometric modulator in the described display, and the described interferometric modulator of wherein said voltage waveform in described display provides a clean zero charge.
24, method as claimed in claim 23, wherein said voltage waveform are applied to the basic all elements in the described display simultaneously.
25, method as claimed in claim 23, wherein said voltage waveform comprise an alternation square waveform.
26, method as claimed in claim 23, wherein said voltage waveform comprises a triangular waveform.
27, method as claimed in claim 23, wherein said voltage waveform comprise a triangular waveform, heel one alternation square waveform, then with a constant voltage, heel one second alternation square waveform again.
28, method as claimed in claim 23, it further comprises a short circuit of at first surveying in the described interferometric modulator display between two conductive lead wires.
29, method as claimed in claim 23, it further comprises an open circuit of at first surveying in the described interferometric modulator display between two conductive lead wires.
30, the method for the short circuit in a kind of reparation one display, it is included at least two conductive lead wire two ends that wherein measured a short circuit and applies a voltage, and described voltage is enough at least one display element of encouraging described conductive lead wire to pass.
31, method as claimed in claim 30, wherein said display comprises interferometric modulator.
32, method as claimed in claim 30, wherein said voltage waveform make it provide a clean zero charge to described display element.
33, method as claimed in claim 30, wherein said voltage waveform comprise an alternation square waveform.
34, method as claimed in claim 30, wherein said voltage waveform comprises a triangular waveform.
35, a kind of interferometric modulator display of testing by a method of testing, described method of testing comprises uses a coercive voltage/measurement current technique to measure in the described display resistance between at least two conductive lead wires, wherein said conductive lead wire is used to drive the display element in the described display, and the voltage that is applied during described coercive voltage/measurement current technique is lower than one for encouraging the required voltage of described display element.
36, display as claimed in claim 35, wherein said method further comprise according to described measurement discerns a short circuit or an open circuit between described at least two conductive lead wires.
37, display as claimed in claim 35, wherein said method further are included between the opposite end of one or more conductive lead wire row or column and apply described coercive voltage.
38, display as claimed in claim 35, wherein said method further are included between the capable and row of the conductive lead wire of overlapping and apply described coercive voltage.
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| CN200580031983A Expired - Fee Related CN100595626C (en) | 2004-09-27 | 2005-08-25 | Systems and methods for measuring color and contrast in specular reflective devices |
| CN 200510102801 Pending CN1847915A (en) | 2004-09-27 | 2005-09-12 | Electrical characterization of interferometric modulators |
| CN 200510102600 Pending CN1811520A (en) | 2004-09-27 | 2005-09-12 | Electro-optical measurement of hysteresis in interferometric modulators |
| CN2007101086724A Expired - Fee Related CN101071061B (en) | 2004-09-27 | 2005-09-16 | Process control monitor of interferometric modulators |
| CN2007101086866A Expired - Fee Related CN101071200B (en) | 2004-09-27 | 2005-09-16 | Process control monitor of interferometric modulators |
| CN 200580032672 Pending CN101027597A (en) | 2004-09-27 | 2005-09-16 | Process control monitors for interferometric modulators |
| CN2007101086705A Expired - Fee Related CN101063747B (en) | 2004-09-27 | 2005-09-16 | Process control monitors for interferometric modulators |
| CN 200710108685 Pending CN101071199A (en) | 2004-09-27 | 2005-09-16 | Electrical characterization of interferometric modulators |
| CNB2005800326429A Expired - Fee Related CN100538800C (en) | 2004-09-27 | 2005-09-23 | Test method, system and the equipment of a plurality of interferometric modulators and make the method for this system |
| CN200580032120.9A Expired - Fee Related CN101027707B (en) | 2004-09-27 | 2005-09-23 | Methods for visually inspecting interferometric modulators for defects |
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| CN2007101086866A Expired - Fee Related CN101071200B (en) | 2004-09-27 | 2005-09-16 | Process control monitor of interferometric modulators |
| CN 200580032672 Pending CN101027597A (en) | 2004-09-27 | 2005-09-16 | Process control monitors for interferometric modulators |
| CN2007101086705A Expired - Fee Related CN101063747B (en) | 2004-09-27 | 2005-09-16 | Process control monitors for interferometric modulators |
| CN 200710108685 Pending CN101071199A (en) | 2004-09-27 | 2005-09-16 | Electrical characterization of interferometric modulators |
| CNB2005800326429A Expired - Fee Related CN100538800C (en) | 2004-09-27 | 2005-09-23 | Test method, system and the equipment of a plurality of interferometric modulators and make the method for this system |
| CN200580032120.9A Expired - Fee Related CN101027707B (en) | 2004-09-27 | 2005-09-23 | Methods for visually inspecting interferometric modulators for defects |
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- 2005-08-22 CN CN 200580027723 patent/CN101006491A/en active Pending
- 2005-08-25 CN CN200580031983A patent/CN100595626C/en not_active Expired - Fee Related
- 2005-09-12 CN CN 200510102801 patent/CN1847915A/en active Pending
- 2005-09-12 CN CN 200510102600 patent/CN1811520A/en active Pending
- 2005-09-16 CN CN2007101086724A patent/CN101071061B/en not_active Expired - Fee Related
- 2005-09-16 CN CN2007101086866A patent/CN101071200B/en not_active Expired - Fee Related
- 2005-09-16 CN CN 200580032672 patent/CN101027597A/en active Pending
- 2005-09-16 CN CN2007101086705A patent/CN101063747B/en not_active Expired - Fee Related
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| CN101946277A (en) * | 2008-02-11 | 2011-01-12 | 高通Mems科技公司 | Method and apparatus for sensing, measurement or characterization of display elements integrated with the display drive scheme, and system and applications using the same |
| CN101946277B (en) * | 2008-02-11 | 2014-09-03 | 高通Mems科技公司 | Method and apparatus for sensing, measurement or characterization of display elements integrated with the display drive scheme, and system and applications using the same |
| CN105679216A (en) * | 2016-01-04 | 2016-06-15 | 京东方科技集团股份有限公司 | Detection device and detection method for display device |
| CN105679216B (en) * | 2016-01-04 | 2018-05-22 | 京东方科技集团股份有限公司 | The detection device and detection method of a kind of display device |
Also Published As
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| CN101071199A (en) | 2007-11-14 |
| CN101071200A (en) | 2007-11-14 |
| CN101063747B (en) | 2012-06-20 |
| CN100538800C (en) | 2009-09-09 |
| CN101071200B (en) | 2010-11-17 |
| CN101027589A (en) | 2007-08-29 |
| CN101071061B (en) | 2010-08-04 |
| CN101063747A (en) | 2007-10-31 |
| CN101027597A (en) | 2007-08-29 |
| CN101027707A (en) | 2007-08-29 |
| CN101006491A (en) | 2007-07-25 |
| CN101071061A (en) | 2007-11-14 |
| CN101027712A (en) | 2007-08-29 |
| CN101027707B (en) | 2013-02-13 |
| CN100595626C (en) | 2010-03-24 |
| CN1811520A (en) | 2006-08-02 |
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