CN101071061B

CN101071061B - Process control monitor of interferometric modulators

Info

Publication number: CN101071061B
Application number: CN2007101086724A
Authority: CN
Inventors: 威廉·J·卡明斯; 布莱恩·J·加利
Original assignee: Qualcomm MEMS Technologies Inc
Current assignee: Qualcomm MEMS Technologies Inc
Priority date: 2004-09-27
Filing date: 2005-09-16
Publication date: 2010-08-04
Anticipated expiration: 2025-09-16
Also published as: CN1847915A; CN101063747B; CN101027589A; CN101027707B; CN101027597A; CN100595626C; CN101006491A; CN100538800C; CN101071200B; CN101063747A; CN1811520A; CN101027707A; CN101071199A; CN101071200A; CN101071061A; CN101027712A

Abstract

Process control monitors are disclosed that are produced using at least some of the same process steps used to manufacture a MEMS device. Analysis of the process control monitors can provide information regarding properties of the MEMS device and components or sub-components in the device. This information can be used to identify errors in processing or to optimize the MEMS device. In some embodiments, analysis of the process control monitors may utilize optical measurements.

Description

The process control monitor that is used for interferometric modulator

Technical field

The field of the invention relate to MEMS (micro electro mechanical system) (microelectromechanical system, MEMS).

Background technology

MEMS (micro electro mechanical system) (MEMS) comprises micromechanical component, activator appliance and electronic component.Can use deposition, etching and/or other etching remove substrate and/or deposited material layer part or add layer and produced micromechanical component with a micro fabrication that forms electric installation and electromechanical assembly.One type MEMS device is called interferometric modulator.As used herein, term interferometric modulator or interferometric light modulator refer to a kind of use principle of optical interference and optionally absorb and/or catoptrical device.In certain embodiments, interferometric modulator can comprise the pair of conductive plate, and one of them or both may be transparent in whole or in part and/or be had reflectivity, and can carry out relative motion when applying suitable electric signal.In a particular embodiment, a plate can comprise the fixed bed that is deposited on the substrate, and another plate can comprise the metallic film that is separated with fixed bed by air gap.As described in more detail, plate can change the optical interference that is incident on the light on the interferometric modulator with respect to the position of another plate.These devices have the application of wide scope, and in this technology, utilize and/or revise these types of devices characteristic make its feature to be used to improve existing product and to create still undeveloped new product by excavation, will be useful.

During the manufacturing of MEMS device, may make a mistake.Detecting wrong and error source can ask a question aspect the quality control of MEMS device and the optimization.Therefore, need be used to monitor manufacture process and result's thereof structure and method.

Summary of the invention

The embodiment that this paper discloses comprises a kind of method that obtains the information of the relevant manufacture process that is used to make MEMS (micro electro mechanical system) (MEMS), and described method comprises: form at least one MEMS structure by a series of depositions and patterning step on first side of substrate; Utilize the deposition and the patterning step of described series to form at least one test cell simultaneously on described first side of described substrate, wherein said test cell has at least one textural difference that is different from described MEMS structure; Detect from the light of described test cell reflection with second side relative with described first side from described substrate, described whereby detected light is provided at least a properties of materials that deposits or remove during described deposition and the patterning step.

Another embodiment that this paper discloses comprises a kind of method that monitors the interferometric modulator manufacture process, wherein said manufacture process comprises a series of depositions and patterning step, described method comprises: use the deposition of described series and patterning step to form test cell, wherein said test cell has at least one textural difference that is different from the interferometric modulator that is formed by described manufacture process; With the light reflectivity that detects from described test cell.

Another embodiment that this paper discloses comprises a kind of test cell that is used to monitor the interferometric modulator manufacture process, wherein said interferometric modulator is suitable for display, makes described test cell by the process that has at least one common step with the step that is used to make the interferometric modulator that is suitable for display.

Another embodiment that this paper discloses comprises a kind of wafer, and it comprises: one or more interferometric modulators, and it is suitable for display; With one or more test cells, it is suitable for reflecting incident light and the relevant information that is used to make the process of described one or more interferometric modulators is provided whereby.

Another embodiment that this paper discloses comprises a kind of wafer, and it comprises: a plurality of first members are used for reflected light to be used for display; With second member, be used to reflect incident light and be used to monitor the process that is used to make described first member.

Another embodiment that this paper discloses comprises the method that a kind of manufacturing is used for first wafer of display, and described method comprises: form a plurality of interferometric modulators and at least one test cell on second wafer; Also produce described first wafer with described second wafer of cutting whereby to remove described test cell.

Another embodiment that this paper discloses comprises a kind of method whether interferometric modulator array is suitable for display of discerning, wherein said interferometric modulator is to make by the process that comprises a series of depositions and patterning step, and described method comprises: use the deposition of described series and some step at least in the patterning step to form at least one test cell; With at least one characteristic that detects described test cell.

Another embodiment that this paper discloses comprises a kind of supervision and is being positioned between two other material layers during making MEMS (micro electro mechanical system) (MEMS) and the etching degree methods of first material at two contiguous places of other material layer, described method comprises: make the test cell that comprises described two other material layers and be placed in described first material of locating with described two layers vicinity between described two layers, the one deck in wherein said two layers comprises the hole; Described hole is exposed to etchant; With detect from the center in described hole described etchant etching with optical mode and remove the distance of described first material, the etching degree of described first material of described whereby distance indication.

Another embodiment that this paper discloses comprises a kind of wafer, it comprises: a plurality of structures, it comprises sacrifice layer and is positioned on the described sacrifice layer and contiguous at least one layer located of described sacrifice layer, wherein described structure becomes interferometric modulator when removing described sacrifice layer, wherein be positioned at described at least one layer of locating with described sacrifice layer vicinity on the described sacrifice layer and comprise a plurality of holes, etchant can pass described hole and arrive described sacrifice layer; And test cell, it also comprises described sacrifice layer and is positioned on the described sacrifice layer and contiguous at least one layer located of described sacrifice layer, wherein being positioned on the described sacrifice layer in described test cell comprises a plurality of holes with contiguous described at least one layer located of described sacrifice layer, and the distance between the described hole in the wherein said test cell is greater than the distance between the described a plurality of holes in described a plurality of structures.

Another embodiment that this paper discloses comprises a kind of wafer, it comprises: a plurality of structures, it comprises sacrifice layer and is positioned on the described sacrifice layer and contiguous at least one layer located of described sacrifice layer, wherein described structure becomes interferometric modulator when removing described sacrifice layer, wherein be positioned at described at least one layer of locating with described sacrifice layer vicinity on the described sacrifice layer and comprise a plurality of holes, etchant can pass described hole and arrive described sacrifice layer; And test cell, it also comprises described sacrifice layer and described at least one layer that is positioned on the described sacrifice layer and described sacrifice layer vicinity is located, and wherein is positioned on the described sacrifice layer to comprise single hole with contiguous described at least one layer located of described sacrifice layer.

Another embodiment that this paper discloses comprises the method that a kind of manufacturing has the wafer of MEMS (micro electro mechanical system) (MEMS) and test cell structure, described method comprises: form a plurality of structures, wherein forming described a plurality of structure comprises one or more material depositions and removes step, wherein said structure comprises sacrifice layer and is positioned on the described sacrifice layer and contiguous at least one layer located of described sacrifice layer, wherein be positioned at described at least one layer of locating with described sacrifice layer vicinity on the described sacrifice layer and comprise a plurality of holes, etchant can pass described hole and arrive described sacrifice layer; Form test cell simultaneously, wherein forming described test cell comprises described one or more material depositions and removes step, wherein said test cell also comprises described sacrifice layer and is positioned on the described sacrifice layer and contiguous described at least one layer located of described sacrifice layer, being positioned on the described sacrifice layer in the wherein said test cell comprises a plurality of holes with contiguous described at least one layer located of described sacrifice layer, and the distance between the described hole in the wherein said test cell is greater than the distance between the described a plurality of holes in described a plurality of structures; With described a plurality of structures and described test cell are exposed to etchant.

Another embodiment that this paper discloses comprises a kind of wafer, and it comprises: micro electromechanical structure (MEMS); And test cell, it is suitable for measuring the etching degree of the material of removing during the manufacturing of described MEMS.

Another embodiment that this paper discloses comprises a kind of wafer, and it comprises: first member, and it is used for the mechanically moving structure in response to electric excitation; With second member, it is used to measure the etching degree of the material of removing during the manufacturing of described first member.

Another embodiment that this paper discloses comprises a kind of test cell of producing by process, and described process comprises: at least three material layers are deposited above each other; With in top layer of material, form the hole.

Another embodiment that this paper discloses comprises and a kind ofly is used for determining the interferometric modulator manufacture process to the method from the influence of the color of the interferometric modulator reflection of being made by described process, and described method comprises: make a plurality of interferometric modulators that comprise the post that supports the first mechanical diaphragm; Manufacturing comprises the test cell etalon of the post that supports the second mechanical diaphragm, and the described post in the wherein said test cell is to show the higher density of density than the described post in described a plurality of interferometric modulators; With the light of detection from described test cell etalon reflection, described whereby detected light provides the indication of the degree of depth of interference cavity in described a plurality of interferometric modulator.

Another embodiment that this paper discloses comprise a kind of be used to monitor the process of making interferometric modulator to those interferometric modulators the test cell of influence of catoptrical color, it comprises the testing standard tool, described etalon comprise with the interferometric modulator of producing by described process in compare the post that supports the mechanical diaphragm in the described testing standard tool with high density more.

Another embodiment that this paper discloses comprises a kind of wafer, and it comprises: a plurality of interferometric modulators, and it is suitable for display; And test cell, it is suitable for reflecting and the light of at least one reflection from described reflectivity display element has the light of same hue in fact.

Another embodiment that this paper discloses comprises a kind of test cell, it comprises the etalon of the conduction machinery diaphragm that has the conductive portion minute surface and comprise minute surface, wherein said mechanical diaphragm separates with described partial mirror by a plurality of posts, the density of its center pillar is enough high so that when applying voltage between described partial mirror and described mechanical diaphragm, described mechanical diaphragm can not collapse to described partial mirror.

Another embodiment that this paper discloses comprises a kind of MEMS (micro electro mechanical system) (MEMS) of combination and method of test cell structure made, described method comprises: form the MEMS structure, wherein form described MEMS structure and comprise one or more material deposition and patterning step, wherein said MEMS structure comprises the first mechanical diaphragm that is supported by more than first post; Form test cell simultaneously, wherein form described test cell and comprise described one or more material deposition and patterning step, described test cell comprises the second mechanical diaphragm that is supported by more than second post, and wherein said more than second post is to show the higher density of described more than first post.

Another embodiment that this paper discloses comprises a kind of wafer, and it comprises: a plurality of first members are used for reflected light to be used for display; With second member, be used for stably reflecting have color with from the identical in fact light of the color of described second at least one reflection of member.

Another embodiment that this paper discloses comprises a kind of test cell of being produced by described process, and described process comprises: form partial mirror; Form mechanical diaphragm; With a plurality of posts that form the described mechanical diaphragm of support and described mechanical diaphragm is separated with described partial mirror, the density of its center pillar is enough high so that when applying voltage between described partial mirror and described mechanical diaphragm, described mechanical diaphragm can not collapse to described partial mirror.

Another embodiment that this paper discloses comprises the method for a kind of supervision deposition of the material of deposition during making MEMS (micro electro mechanical system) (MEMS), described method comprises: form the test cell of being made up of at least three material layers of deposition during making, wherein said at least three material layers are less than the number of the layer of deposition during described MEMS makes, and wherein said at least three material layers form etalon; With the light of detection, obtain the information of the character of relevant described at least three layers whereby from described etalon reflection.

Another embodiment that this paper discloses comprises a kind of wafer, and it comprises: a plurality of interferometric modulators, and it is suitable for display; With non-modulation interferometer.

Another embodiment that this paper discloses comprises a kind of wafer, and it comprises: a plurality of first members are used for interfering the ground display light at display; With second member, be used for non-modulation ground and interfere the ground reflected light.

Another embodiment that this paper discloses comprises the method for a kind of supervision deposition of the material of deposition during making MEMS (micro electro mechanical system) (MEMS), described method comprises: form the test cell that comprises one or more material layers that deposit during manufacture, the number of material layer is less than the number of the layer of deposition during described MEMS makes in the wherein said test cell; With the reflectivity that detects described test cell, described whereby reflectivity provides the information of the character of the described layer in the relevant described test cell.

Another embodiment that this paper discloses comprises a kind of wafer, and it comprises: a plurality of interferometric modulators, and it is suitable for display, and described interferometric modulator comprises a plurality of material layers; And test cell, it comprises one or more material layers in the described material layer, wherein said test cell comprises the material layer that is less than all described a plurality of material layers.

Another embodiment that this paper discloses comprises a kind of MEMS (micro electro mechanical system) (MEMS) of combination and method of test cell structure made, described method comprises: form the MEMS structure, wherein form described MEMS structure and comprise one or more material deposition and patterning step; Form test cell simultaneously, wherein form described test cell and comprise described one or more material deposition and patterning step, wherein said test cell comprises the assembly that is less than all component that exists in the described MEMS structure.

Another embodiment that this paper discloses comprises a kind of wafer of producing by process, and described process comprises: deposition and a series of material layers of patterning are to form the MEMS structure on substrate; With on described substrate simultaneously the deposition and a series of material layers of patterning with formation test cell, wherein said test cell comprises the assembly that is less than all component that exists in the described MEMS structure.

Another embodiment that this paper discloses comprises the method for a kind of measurement thickness of the layer of deposition during making MEMS (micro electro mechanical system) (MEMS), described method comprises: formation comprises successive sedimentation two or more layers above each other, wherein said layer is to use the process that is used for forming described layer during making described MEMS to form, and wherein said layer is patterned so that at least two steps are formed in the profile of described structure; With by the inswept described structure of profilograph being measured the height of described step.

Another embodiment that this paper discloses comprises a kind of test cell that is used to measure making a plurality of layers the thickness that deposits during the interferometric modulator, and it comprises and is stacked on top each other so that the layer of at least two steps in the profile that forms described test cell.

Another embodiment that this paper discloses comprises a kind of wafer, and it comprises: a plurality of interferometric modulators, and it is suitable for display, and described interferometric modulator comprises a plurality of material layers; And test cell, it comprises described a plurality of material layer, described a plurality of material layers are stacked on each other the top so that form at least two steps in the profile of described test cell.

Another embodiment that this paper discloses comprises a kind of MEMS (micro electro mechanical system) (MEMS) of combination and method of test cell structure made, described method comprises: form the MEMS structure, wherein form described MEMS structure and comprise one or more material deposition and patterning step, wherein said MEMS structure comprises a plurality of layers; Form test cell simultaneously, wherein form described test cell and comprise described one or more materials deposition and patterning step, wherein said test cell comprises described a plurality of layer so that form at least two steps in the profile of described test cell.

Another embodiment that this paper discloses comprises a kind of wafer, and it comprises: a plurality of reflectivity display elements, and it is suitable for display; And test cell, it is suitable for measuring the thickness of at least one material of deposition during described reflectivity display element is made.

Another embodiment that this paper discloses comprises a kind of wafer, and it comprises: a plurality of first members are used for reflected light and are used for display; With second member, be used to measure thickness making at least one material that deposits during described first member.

Another embodiment that this paper discloses comprises a kind of wafer of being produced by process, and described process comprises: deposition and a series of material layers of patterning are to form the MEMS structure on substrate; With on described substrate simultaneously deposition and the material layer of the described series of patterning with the formation test cell, wherein after described patterning in the described test cell remaining material layer form at least two steps in the profile of described test cell.

Another embodiment that this paper discloses comprises the method that a kind of test is used to make the process of polychrome interferometric modulator display, wherein make the interferometric modulator of different color in the described display by the gap that between partial reflection device and reflectivity machinery diaphragm, forms different depth, wherein determine the degree of depth in described gap by the deposition of one or more sacrifice layers, wherein determine the degree of depth at least one gap by the deposition of a plurality of sacrifice layers, described method comprises: form the test cell that comprises described one or more sacrifice layers, at least one zone of wherein said test cell comprises the described a plurality of sacrifice layers above being deposited on each other; Measure the profile of described test cell; With the cumulative thickness of determining described a plurality of sacrifice layers from described profile.

Another embodiment that this paper discloses comprises a kind of test cell that is used to test the process that is used to make the polychrome interferometric modulator display, wherein make the interferometric modulator of different color in the described display by the gap that between partial reflection device and reflectivity machinery diaphragm, forms different depth, wherein determine the degree of depth in described gap by the deposition of one or more sacrifice layers, wherein determine the degree of depth at least one gap by the deposition of a plurality of sacrifice layers, described test cell comprises a plurality of material layers above being positioned at each other, a zone of wherein said test cell comprises single sacrifice layer, the second area of described test cell comprises two sacrifice layers above being positioned at each other, and the 3rd zone of described test cell comprises three sacrifice layers above being positioned at each other.

Description of drawings

Fig. 1 is the isometric view of a part of describing an embodiment of interferometric modulator display, and wherein the removable reflection horizon of first interferometric modulator is in slack position, and the removable reflection horizon of second interferometric modulator is in active position.

Fig. 2 is the system block diagram that an embodiment of the electronic installation that 3 * 3 interferometric modulator displays are arranged is incorporated in explanation into.

Fig. 3 is that the removable mirror position of an one exemplary embodiment of interferometric modulator of Fig. 1 is to the figure of applying voltage.

Fig. 4 is the explanation that can be used for driving one group of row and column voltage of interferometric modulator display.

An exemplary frame of the video data in 3 * 3 interferometric modulator displays of Fig. 5 A key diagram 2.

Fig. 5 B explanation can be used for writing the exemplary sequential chart of row and column signal of the frame of Fig. 5 A.

Fig. 6 A and 6B are the system block diagrams that the embodiment of the visual display unit that comprises a plurality of interferometric modulators is described.

Fig. 7 A is the xsect of the device of Fig. 1.

Fig. 7 B is the xsect of the alternate embodiment of interferometric modulator.

Fig. 7 C is the xsect of another alternate embodiment of interferometric modulator.

Fig. 7 D is the xsect of the another alternate embodiment of interferometric modulator.

Fig. 7 E is the xsect of the extra alternate embodiment of interferometric modulator.

Fig. 8 is the vertical view that comprises the wafer of MEMS structure and a plurality of process control monitors.

Fig. 9 is the xsect of the layer that deposits during making interferometric modulator.

Figure 10 A is the xsect based on the layer of the process control monitor of etalon that is used for monitoring the process of the interferometric modulator that is used for shop drawings 9.

Figure 10 B is another xsect based on the layer of the process control monitor of etalon that is used for monitoring the process of the interferometric modulator that is used for shop drawings 9.

Figure 10 C is another xsect based on the layer of the process control monitor of etalon that is used for monitoring the process of the interferometric modulator that is used for shop drawings 9.

Figure 10 D is another xsect based on the layer of the process control monitor of etalon that is used for monitoring the process of the interferometric modulator that is used for shop drawings 9.

Figure 11 A is the xsect of layer of non-process control monitor based on etalon that is used for monitoring the process of the interferometric modulator that is used for shop drawings 9.

Figure 11 B is the xsect that is used for monitoring the layer of the non-process control monitor based on etalon of another of process of the interferometric modulator that is used for shop drawings 9.

Figure 11 C is the xsect that is used for monitoring the layer of the non-process control monitor based on etalon of another of process of the interferometric modulator that is used for shop drawings 9.

Figure 11 D is the xsect that is used for monitoring the layer of the non-process control monitor based on etalon of another of process of the interferometric modulator that is used for shop drawings 9.

Figure 11 E is the xsect that is used for monitoring the layer of the non-process control monitor based on etalon of another of process of the interferometric modulator that is used for shop drawings 9.

Figure 11 F is the xsect that is used for monitoring the layer of the non-process control monitor based on etalon of another of process of the interferometric modulator that is used for shop drawings 9.

Figure 11 G is the xsect that is used for monitoring the layer of the non-process control monitor based on etalon of another of process of the interferometric modulator that is used for shop drawings 9.

Figure 12 is the vertical view that comprises the wafer of interferometric modulator array and process control monitor, and described process control monitor is used to monitor release etch and the color that reflects from interferometric modulator.

Figure 13 A is the vertical view that can be used for monitoring the process control monitor of release etch.

Figure 13 B is the vertical view that can be used for monitoring another process control monitor of release etch.

Figure 14 is the xsect of process control monitor that can be used for measuring the thickness of the layer in the interferometric modulator.

Figure 15 is the xsect of another embodiment of process control monitor that can be used for the thickness of the layer in the measuring process control monitor.

Figure 16 is the xsect of another embodiment of process control monitor that can be used for the thickness of the layer in the measuring process control monitor.

Embodiment

Below describe in detail at some specific embodiment of the present invention.Yet the present invention can implement by many different modes.Describe in the content referring to accompanying drawing at this, all same sections are represented with same numeral in the accompanying drawing.As will be understood from the following description, though described embodiment may be implemented in be configured to show motion (for example, video) still fixing (for example, rest image) no matter and literal or any device of the image of picture in.More particularly, expect that described embodiment may be implemented in the multiple electronic installation or related with multiple electronic installation, described multiple electronic installation is (but being not limited to) mobile phone for example, wireless device, personal digital assistant (PDA), portable or portable computer, gps receiver/omniselector, camera, the MP3 player, video camera, game console, wrist-watch, clock, counter, TV monitor, flat-panel monitor, computer monitor, automotive displays (for example, mileometer display etc.), Cockpit Control Unit and/or display, the display of camera view (for example, the display of rear view camera in the vehicle), the electronics photograph, electronic bill-board or direction board, projector, building structure, packing and the aesthetic structures display of the image of a jewelry (for example, for).Have in the non-display application that MEMS device with the similar structure of describing herein of device also can be used for electronic switching device for example.

The manufacturing of MEMS device is usually directed to form to have by using a series of material depositions, patterning and the structure of etching step formation and some material layers of thickness.May be difficult to any mistake of during the processing of final MEMS device diagnosis given layer device, taking place.Which in addition, may be difficult to determine to regulate special parameter (for example, film thickness) so that device is optimized about its intended use from resulting device.Therefore, need can be used for monitoring the result's of particular procedure step structure and method.Therefore, in various embodiments, provide the process control monitor of some procedure construction at least of the identical process that is used for making the MEMS device.The analysis of process control monitor provides the information about the child group of individual component that constitutes the MEMS device or assembly.

Explanation comprises the embodiment of an interferometric modulator display of interfere type MEMS display element among Fig. 1.In these devices, pixel is in bright state or dark state.Under bright (" connection " or " unlatching ") state, display element reflexes to the user with the major part of incident visible light.When in dark (" disconnection " or " closing ") state following time, display element reflexes to the user with few incident visible light.Decide according to embodiment, can put upside down the light reflectance properties of " connection " and " disconnection " state.The MEMS pixel can be configured and mainly reflect at selected color place, thereby allows the colour except white and black displays to show.

Fig. 1 is an isometric view of describing two neighbors in a series of pixels of visual displays, and wherein each pixel comprises the MEMS interferometric modulator.In certain embodiments, interferometric modulator display comprises the delegation/column array of these interferometric modulators.Each interferometric modulator comprises a pair of reflection horizon, and it is positioned to have at least one variable-sized resonant optical mode chamber at a distance of variable and controllable distance with formation each other.In one embodiment, can move one of described reflection horizon between the two positions.In primary importance (being called slack position herein), removable reflection horizon is positioned to apart from the relatively large distance in fixed part reflection horizon.In the second place (being called active position herein), removable reflection horizon is positioned to more closely adjacent described partially reflecting layer.Decide position on removable reflection horizon, constructively or devastatingly interferes from the incident light of described two layers reflection, thereby be each pixel generation total reflection state or non-reflective state.

Institute's drawing section branch of pel array comprises two adjacent interferometric modulator 12a and 12b among Fig. 1.In the interferometric modulator 12a of left side, illustrate that removable reflection horizon 14a is in the slack position at the Optical stack 16a preset distance place that comprises partially reflecting layer.In the interferometric modulator 12b of right side, illustrate that removable reflection horizon 14b is in the active position that is adjacent to Optical stack 16b.

Generally include some fused layers (fusedlayer) as Optical stack 16a and 16b (being referred to as Optical stack 16) that this paper quoted, described fused layers can comprise the electrode layer of tin indium oxide (ITO) for example, the partially reflecting layer and the transparent dielectric of for example chromium.Therefore, Optical stack 16 be conduction, partially transparent and partial reflection, and can above-mentioned layer one or more depositing on the transparent substrates 20 be made by (for example).In certain embodiments, described layer is patterned to become a plurality of parallel bands, and as hereinafter further describing, can form column electrode in display device.Removable reflection horizon 14a, 14b can form the series of parallel band (vertical with column electrode 16a, 16b) of depositing metal layers (one or more layers), and described layer metal deposition is at post 18 and be deposited on the top of the intervention expendable material between the post 18.When expendable material was removed in etching, removable reflection horizon 14a, 14b passed through the gap of being defined 19 and separate with Optical stack 16a, 16b.For example the material of the highly conductive of aluminium and reflection can be used for reflection horizon 14, and these bands can form the row electrode in display device.

Do not applying under the voltage condition, chamber 19 is retained between removable reflection horizon 14a and the Optical stack 16a, and wherein removable reflection horizon 14a is in the mechanical relaxation state, and is illustrated as pixel 12a among Fig. 1.Yet when potential difference (PD) was applied to selected row and column, the capacitor that is formed on the infall of the column electrode at respective pixel place and row electrode became charged, and electrostatic force is pulled in described electrode together.If voltage is enough high, so removable reflection horizon 14 is out of shape and is forced to against Optical stack 16.Dielectric layer (not shown in this figure) in the Optical stack 16 can prevent the separating distance between short circuit and key-

course

14 and 16, and is illustrated as the pixel 12b on right side among Fig. 1.No matter the polarity of the potential difference (PD) that is applied how, show all identical.In this way, may command reflective pixel state is similar to employed row in conventional LCD and other display technique/row in many aspects and activates row/row activation of non-reflective pixel state.

Fig. 2 uses the exemplary processes and the system of interferometric modulator array in display application to Fig. 5 B explanation.

Fig. 2 is the system block diagram that explanation can be incorporated an embodiment of the electronic installation that each side of the present invention is arranged into.In described one exemplary embodiment, described electronic installation comprises processor 21, and it can be any general purpose single-chip or multicore sheet microprocessor (for example ARM, Pentium , PentiumII, PentiumIII

, PentiumIV

, Pentium

Pro, 8051, MIPS

, PowerPC

, ALPHA

), or any special microprocessor (for example digital signal processor, microcontroller), or programmable gate array.As way conventional in this technology, processor 21 can be configured to carry out one or more software modules.Except executive operating system, described processor can be configured to carry out one or more software applications, comprises web browser, telephony application, e-mail program or any other software application.

In one embodiment, processor 21 also is configured to be communicated with array driver 22.In one embodiment, described array driver 22 comprises row driver circuits 24 and the column driver circuit 26 that signal is provided to panel or display array (display) 30.The xsect of in Fig. 2, showing array illustrated in fig. 1 with line 1-1.For the MEMS interferometric modulator, OK/the row activated protocol can utilize the hysteresis property of these devices illustrated in fig. 3.May need the potential difference (PD) of (for example) 10 volts to impel displaceable layers to be deformed into state of activation from relaxed state.Yet, when voltage when described value reduces, displaceable layers is kept its state when voltage drop is returned below 10 volts.In the one exemplary embodiment of Fig. 3, displaceable layers is just lax fully when voltage drops to below 2 volts.Therefore have about 3 to 7V voltage range in example illustrated in fig. 3, have the window of the voltage that applies in described scope, device all is stable in relaxed state or state of activation in described window.This window is referred to herein as " lag windwo " or " stability window ".For the display array of hysteresis characteristic with Fig. 3, can design row/row activated protocol and make and to be expert at during the gating, gating capable in pixel to be activated be exposed to about 10 volts voltage difference, and pixel to be relaxed is exposed to the voltage difference that lies prostrate near zero.After gating, described pixel is exposed to about 5 volts steady state voltage official post and gets it and keep the gating of being expert at and make in its residing any state.In this example, each pixel experiences the potential difference (PD) in " stability window " of 3-7 volt after being written into.This feature makes pixel design illustrated in fig. 1 activate or lax being pre-stored in all is stable under the state identical apply under the voltage conditions.Because each pixel of interferometric modulator (activating or relaxed state no matter be in) is the capacitor that is formed by fixed reflector and mobile reflection horizon in essence, so can keep this steady state (SS) and almost inactivity consumption under the voltage in lag windwo.In essence, if the voltage that is applied is fixed, there is not electric current to flow in the pixel so.

In the typical case uses, can be by confirming that according to required group activation pixel in first row described group of row electrode produces display frame.Then horizontal pulse is applied to row 1 electrode, thereby activates pixel corresponding to the alignment of being confirmed.Then change described group and confirmed that the row electrode is with corresponding to required group activation pixel in second row.Then pulse is applied to row 2 electrodes, thereby activates suitable pixel in the row 2 according to confirmed row electrode.Row 1 pixel is not influenced by row 2 pulses, and maintains in the state that its 1 impulse duration of being expert at is set.Can be in a continuous manner the row of whole series be repeated this process to produce frame.Usually, repeating this process continuously by the speed with a certain requisite number purpose of per second frame to refresh and/or upgrade described frame with new video data.The row and column electrode that is used to drive pel array also is well-known and can uses in conjunction with the present invention with the agreement of the broad variety that produces display frame.

Fig. 4,5A and 5B explanation are used for forming a possible activated protocol of display frame on 3 * 3 arrays of Fig. 2.One group of possible row of the hysteresis curve that Fig. 4 explanation can be used for making pixel show Fig. 3 and row voltage level.In Fig. 4 embodiment, activate pixel and relate to suitable row are set at-V _Bias, and will suitably go and be set at+Δ V, its respectively can corresponding to-5 volts with+5 volts.Relax pixels is to be set at+V by will suitably being listed as _Bias, and will suitably go and be set at identical+Δ V, realize thereby on pixel, produce zero volt potential difference (PD).The voltage of being expert at maintains in those row of zero volt, no matter row are in+V _BiasStill-V _Bias, all be stable in the pixel what initial residing state in office.Same as illustrated in fig. 4, will understand, can use the voltage that has with the opposite polarity polarity of above-mentioned voltage, for example, activate pixel and can relate to and being set at+V suitably being listed as _Bias, and will suitably go and be set at-Δ V.In this embodiment, discharging pixel is to be set at-V by will suitably being listed as _Bias, and will suitably go and be set at identical-Δ V, realize thereby on pixel, produce zero volt potential difference (PD).

Fig. 5 B is a sequential chart of showing a series of row and column signals of 3 * 3 arrays be applied to Fig. 2, the row and column signal of described series will produce the display layout that illustrates among Fig. 5 A, and the pixel that wherein is activated is non-reflection.Before the frame that illustrates in to Fig. 5 A write, pixel can be in any state, and in this example all the row all be in 0 volt, and all row all be in+5 volts.Under the voltage condition that these applied, all pixels all are stable in its existing activation or relaxed state.

In the frame of Fig. 5 A, pixel (1,1), (1,2), (2,2), (3,2) and (3,3) are activated.In order to realize this purpose, during be expert at 1 " line time (line time) ", row 1 and 2 are set at-5 volts, and row 3 are set at+5 volts.Because all pixels all are retained in the stability window of 3-7 volt, so this does not change the state of any pixel.Then use from 0 and be raised to 5 volts and return zero pulse gate capable 1.This has activated (1,1) and (1, the 2) pixel and (1, the 3) pixel that relaxed.Other pixel is all unaffected in the array.In order optionally to set row 2, row 2 are set at-5 volts, and row 1 and 3 are set at+5 volts.The same strobe that is applied to row 2 then will activate pixel (2,2) and relax pixels (2,1) and (2,3).Equally, other pixel is all unaffected in the array.Set row 3 similarly by row 2 and 3 being set at-5 volts and row 1 are set at+5 volts.Row 3 strobe sets row 3 pixels are as shown in Fig. 5 A.After frame was write, the row current potential was zero, and the row current potential can maintain+5 or-5 volts, and to follow display be stable in the layout of Fig. 5 A.To understand, same program can be used for the array of tens of or hundreds of row and columns.Also will should be appreciated that, the sequential, sequence and the level that are used to carry out the voltage that row and column activates can extensively change in the General Principle of above being summarized, and example above only is exemplary, and any activation voltage method all can be used with system and method described herein.

Fig. 6 A and 6B are the system block diagrams of the embodiment of explanation display device 40.Display device 40 can be (for example) cellular phone or mobile phone.Yet the same components of display device 40 or its be also various types of display device of illustrative examples such as TV and portable electronic device of version a little.

Display device 40 comprises shell 41, display 30, antenna 43, loudspeaker 45, input media 48 and microphone 46.Shell 41 is formed by any one of the well-known multiple manufacturing process of those skilled in the art usually, and described technology comprises injection-molded and vacuum forming.In addition, shell 41 can be made by any one of multiple material, and described material is including (but not limited to) plastics, metal, glass, rubber and pottery, or its combination.In one embodiment, shell 41 comprises part that can be removed (not shown), and described part that can be removed can have different color with other or contain the not part that can be removed exchange of isolabeling, picture or symbol.

As described in this article, the display 30 of exemplary display device 40 can be and comprises bistable display (bi-stabledisplay) in any one of interior multiple display.In other embodiments, well-known as the those skilled in the art, display 30 comprises the flat-panel monitor of for example aforesaid plasma, EL, OLED, STNLCD or TFTLCD, or the non-tablet display of CRT or other tube arrangements for example.Yet for the purpose of describing present embodiment, as described in this article, display 30 comprises interferometric devices.

The assembly of illustrative exemplary display device 40 embodiment among Fig. 6 B.Illustrated exemplary display device 40 comprises shell 41 and can comprise the partially enclosed at least additional assemblies in described shell 41.For instance, in one embodiment, exemplary display device 40 comprises network interface 27, and described network interface 27 comprises the antenna 43 that is coupled to transceiver 47.Transceiver 47 is connected to processor 21, and processor 21 is connected to regulates hardware 52.Regulate hardware 52 and can be configured to conditioning signal (for example, signal being carried out filtering).Regulate hardware 52 and be connected to loudspeaker 45 and microphone 46.Processor 21 also is connected to input media 48 and driver controller 29.Driver controller 29 is coupled to frame buffer 28 and is coupled to array driver 22, described array driver 22 and then be coupled to display array 30.According to particular exemplary display device 40 designing requirement, power supply 50 is provided to all component with power.

Network interface 27 comprises antenna 43 makes exemplary display device 40 to communicate by letter with one or more devices via network with transceiver 47.In one embodiment, network interface 27 also can have some processing power to alleviate the requirement to processor 21.Antenna 43 is that any antenna with received signal is transmitted in known being used to of those skilled in the art.In one embodiment, described antenna transmits according to IEEE802.11 standard (comprise IEEE802.11 (a) and (b) or (g)) and receives the RF signal.In another embodiment, described antenna transmits according to the BLUETOOTH standard and receives the RF signal.Under the situation of cellular phone, described antenna is used for the known signal of communicating by letter through design to receive CDMA, GSM, AMPS or other in the wireless area telephone network.Transceiver 47 pre-service make processor 21 can receive described signal and also further described signal are handled from the signal that antenna 43 receives.Transceiver 47 is also handled the signal that receives from processor 21 and is made and can transmit described signal from exemplary display device 40 via antenna 43.

In an alternate embodiment, transceiver 47 can be replaced by receiver.In another alternate embodiment, network interface 27 can be replaced by the image source that can store or produce the view data that is sent to processor 21.For instance, described image source can be digital video disk (DVD) or contains the hard disk drive of view data, or produces the software module of view data.

Processor 21 is controlled whole operations of exemplary display device 40 substantially.Processor 21 for example receives the data from the compressing image data of network interface 27 or image source, and described data processing is become raw image data or is processed into the form that easily is processed into raw image data.The data that processor 21 then will have been handled send to driver controller 29 or send to frame buffer 28 for storage.Raw data typically refers to the information of the picture characteristics of each position in the recognition image.For instance, these picture characteristics can comprise color, saturation degree and gray level.

In one embodiment, processor 21 comprises the operation with control exemplary display device 40 of microcontroller, CPU or logical block.Regulate hardware 52 and comprise amplifier and wave filter usually, being used to transferring signals to loudspeaker 45, and be used for from microphone 46 received signals.Adjusting hardware 52 can be the discrete component in the exemplary display device 40, maybe can be incorporated in processor 21 or other assembly.

Driver controller 29 is directly obtained the raw image data that is produced by processor 21 from processor 21 or from frame buffer 28, and suitably the described raw image data of reformatting arrives array driver 22 for high-speed transfer.Specifically, driver controller 29 is reformatted as the data stream of the form with similar grating with raw image data, makes it have the chronological order that is suitable in display array 30 enterprising line scannings.Then, driver controller 29 sends to array driver 22 with formatted information.Conduct integrated circuit (IC) independently can be implemented in numerous ways these controllers although driver controller 29 (for example lcd controller) is usually related with system processor 21.It can be used as in the hardware embedded processor 21, in software embedded processor 21, or is completely integrated in the hardware with array driver 22.

Usually, array driver 22 receives formatted information and video data is reformatted as one group of parallel waveform from driver controller 29, and described waveform is applied to hundreds of and thousands of sometimes lead-in wires from the x-y picture element matrix of display with per second speed repeatedly.

In one embodiment, driver controller 29, array driver 22 and display array 30 are applicable to the display of any type described herein.For instance, in one embodiment, driver controller 29 is conventional display controller or bistable display controller (for example, interferometric modulator controller).In another embodiment, array driver 22 is conventional driver or bi-stable display driver (for example, interferometric modulator display).In one embodiment, driver controller 29 is integrated with array driver 22.This embodiment is general in the height integrated system of for example cellular phone, wrist-watch and other small-area display.In another embodiment, display array 30 is typical display array or bi-stable display array (display that for example, comprises interferometric modulator array).

Input media 48 allows the user to control the operation of exemplary display device 40.In one embodiment, input media 48 comprises keypad, button, switch, touch sensitive screen, the pressure-sensitive or thermosensitive film of qwerty keyboard for example or telephone keypad.In one embodiment, microphone 46 is the input medias that are used for exemplary display device 40.When using microphone 46 to enter data into described device, the user can provide voice command so that the operation of control exemplary display device 40.

Power supply 50 can comprise well-known multiple energy storing device in this technology.For instance, in one embodiment, power supply 50 is rechargeable batteries of nickel-cadmium battery or lithium ion battery for example.In another embodiment, power supply 50 is regenerative resource, capacitor or solar cell, comprises plastic solar cell and solar cell coating.In another embodiment, power supply 50 is configured to from the wall socket received power.

In certain embodiments, as mentioned described in, control programmability reside in the driver controller, it can be arranged in some positions of electronic display system.In some cases, the control programmability resides in the array driver 22.Be understood by those skilled in the art that above-mentioned optimization may be implemented in the hardware of any number and/or the component software and can various configurations implement.

Details according to the structure of the interferometric modulator operated of principle of above statement can extensively change.For instance, Fig. 7 A-7E illustrates five different embodiment of removable reflection horizon 14 and supporting construction thereof.Fig. 7 A is the xsect of the embodiment of Fig. 1, and wherein metal material band 14 is deposited on the vertically extending support member 18.In Fig. 7 B, removable reflection horizon 14 only is attached to support member at the corner place on tethers (tether) 32.In Fig. 7 C, removable reflection horizon 14 is folded down from the deformable layer 34 that can comprise the flexible metal.Described deformable layer 34 is connected to directly or indirectly around the substrate 20 of the periphery of deformable layer 34.These connections are referred to herein as pillar.The embodiment that illustrates among Fig. 7 D has post plugs 42, and deformable layer 34 rests on the described post plugs 42.Shown in Fig. 7 A-7C, removable reflection horizon 14 keeps being suspended in the top, chamber, but deformable layer 34 does not form described pillar by the hole of filling between deformable layer 34 and the Optical stack 16.Exactly, pillar is formed by the smoothing material that is used to form post plugs 42.The embodiment that illustrates among Fig. 7 E is based on the embodiment that shows among Fig. 7 D, but also can be suitable for the embodiment that in Fig. 7 A-7C, illustrates and not shown extra embodiment any one play a role.In the embodiment shown in Fig. 7 E, used the additional layer of metal or other conductive material to form bus structure 44.This allows signal to carry out route along the back side of interferometric modulator, thereby eliminates the possible electrode that must be formed on the substrate 20 of many scripts.

In the embodiment of for example embodiment of those shown in Fig. 7, interferometric modulator serves as the direct viewing device, wherein watches image from the front side of transparent substrates 20, described side with above to be furnished with a side of modulator relative.In these embodiments, reflection horizon 14 is covered the some parts of interferometric modulator in the described side relative with substrate 20 in reflection horizon with optical mode, and it comprises deformable layer 34 and bus structure 44.This permission is configured and operates shaded areas and can negatively not influence picture quality.This separable modulator structure allows to select to be used for the structural design of the dynamo-electric aspect of modulator and optics aspect and material and makes it independently of one another and play a role.In addition, the embodiment shown in Fig. 7 C-7E has the additional benefit that the optical property that is derived from reflection horizon 14 and its engineering properties break away from, and described benefit is carried out by deformable layer 34.This structural design and material that allows to be used for reflection horizon 14 is able to optimization aspect optical property, and is used for the structural design of deformable layer 34 and material is being able to optimization aspect the engineering properties of expectation.

Process control monitor

Many MEMS manufacture processes are made up of a series of material depositions and patterning step.Can with various material successive sedimentations on substrate with cambium layer.Between deposition step, carry out the etched patterning of material and can be used for material that structurally cutting deposits to realize required MEMS structure.Whether multilevel method that MEMS makes and the small scale structure that is produced have been produced and have been had problems aspect material structure with required character and the layer attempting the assessment manufacture process.Therefore, in one embodiment, provide the result's who can be used for assessing various manufacture processes process control monitor.In certain embodiments, some step at least that is used for making the identical manufacturing step of MEMS device is produced process control monitor.The assessment of these process control monitors then can be used for determining the various materials that form and the character of structure during those manufacturing steps.In certain embodiments, use same group of material deposition and the patterning step used during manufacture to produce process control monitor.Can come structurally cutting process control monitor by different patterns is put on process control monitor rather than puts on the MEMS structure.For instance, come the patterning process control monitor by the mode of removing the whole layer that is deposited with etching during etching step, a material layer that is present in the MEMS structure can not be present in the process control monitor fully.Similarly, in other embodiments, the material layer that etching is removed during the manufacturing of MEMS structure may be stayed in the process control monitor usually.

In certain embodiments, can be by the information of optical component acquisition from process control monitor.For instance, the light from the process control monitor reflection may contain relevant for the information that is present in the material the process control monitor.Be understood by those skilled in the art that other method of evaluation process control monitor, for example laser scanning, comprise the micro-minute surface method of light, electronics and x ray microscope face method and spectrographic technique.In one embodiment, with the light of photodetector detection of reflected, to obtain catoptrical intensity.This information can be used for the reflectivity and the transmissivity of the material in the deterministic process control monitor.These character can provide the information about material thickness in the process control monitor again.The measurement of its thickness will be provided from the amount of the reflectivity of inborn reflex material for instance.In one embodiment, use Minolta Reflectometer.In another embodiment, with the light of spectrometer, measure, to obtain catoptrical wavelength dependence from the process control monitor reflection.This wavelength dependence can provide the information about the refractive index of the absorbent properties of material in the process control monitor and material.In addition, because the MEMS device often contains very approaching reflecting surface, so reflected light can stand long mutually and destructive interference (for example, the MEMS device can contain one or more etalons).Therefore, catoptrical wavelength dependency can provide the information about the relative positioning of reflecting surface among the MEMS.In one embodiment, the spectrum that records being coupled to prediction will be from the model spectrum of etalon reflection, so that determine for example character of the degree of depth of etalon.In certain embodiments, use tintmeter to measure from the color of the light of process control monitor reflection.As used herein, " etalon " refers to have reflexive two surfaces to small part, its through the location so that light can pass a surface and pass same return reflection surface before between two surfaces the reflection repeatedly.Repeatedly reflection can cause the phase slake constructive interference under the various wavelength, thereby allows the filtration to optical wavelength.

In one embodiment, can use transparent substrates to support process control monitor.This substrate makes and can carry out optical detection from the side relative with the deposition side.Therefore, in some cases, can survey the position (for example, comprising high reflection layer place) that it should not be in originally to the bottom deposition materials in upper layer.In other embodiments, control monitor from material deposition side with the optical mode detection process.

In one embodiment, referring to Fig. 8, process control monitor 100,102 and 104 can be formed on the same substrate 106 when forming MEMS device 108 simultaneously.Discuss as mentioned, can make the whole identical materials deposition and patterning step of standing of substrate 106, yet, different patterns can be applied with forming process control monitor 100,102 and 104.For instance, may be different from the pattern that during the corresponding pattern step, puts on MEMS device 108 at the pattern that puts on process control monitor 100,102 and 104 during the patterning step.Patterning step can comprise any suitable patterning techniques (for example, photoetching process) in this technology.The different process control monitor 100,102 and 104 of arbitrary number can be formed on the substrate.The integrated wafer of describing among Fig. 8 110 allows the process of using during the manufacturing of specific MEMS device 108 is surveyed.Therefore, but any abnormal result of quick identification at electrical testing MEMS device 108 or before merging to it in packaging system, thus avoided extra cost.In certain embodiments, also can after the manufacturing of MEMS device 108, control monitor 100,102 and 104 by detection process.In one embodiment, MEMS device 108 is made up of the interferometric modulator array that is suitable for display.In certain embodiments, the process control monitor on the mark substrate 106 during manufacture.

Process control monitor based on etalon

Explanation as mentioned, in certain embodiments, process control monitor is through constructing so that it contains at least one etalon.Then can detect from the spectrum of the light of etalon reflection and with described spectrum and be coupled to the character of etalon model, and therefore determine the character of similar structures in the MEMS device with deterministic process control monitor.In certain embodiments, process control monitor is by forming with MEMS device identical materials deposition step, and therefore contains some material layer at least in the material layer that can find in the MEMS device.The number of the layer of finding in the process control monitor in certain embodiments, is less than the number of finding in the MEMS device.

One group of example based on the process control monitor of etalon is to contain all layers that are less than the layer of finding in the interferometric modulator but still the structure that contains etalon.Fig. 9 describes the example of the material that can deposit during the manufacturing of interferometric modulator.At first, tin indium oxide (ITO) layer 154 is deposited on the transparent substrates 152.ITO154 as transparent conductor provides current-carrying plate, make can be in interferometric modulator removable minute surface and described plate between apply voltage.In one embodiment, described ITO is about 500

Thick.Then, deposition chromium layer 150.In one embodiment, chromium 150 is relatively thin (is about 70 in one embodiment

), thereby allow it to serve as the partial reflection device.Perhaps, chromium layer 150 can be deposited on the substrate 152, deposit ITO layer 154 subsequently.Then, dielectric layer 156/158.Described dielectric layer can be made up of one or more oxides.In certain embodiments, oxide skin(coating) 156/158 can be composite bed.For instance, but sedimentary facies to thicker SiO ₂Layer 156 (is about 450 in one embodiment

), deposition is than thin Al subsequently ₂O ₃Layer 158 (is about 70 in one embodiment

) with protection SiO ₂156.In certain embodiments, can use three or three above oxide skin(coating) (for example, Al ₂O ₃-SiO ₂-Al ₂O ₃).Oxide skin(coating) 156/158 provides insulation course between removable minute surface and chromium 150.The thickness of described layer has determined the interventionist nature (especially when it is in state of activation) of interferometric modulator.In next step, deposition of sacrificial layer 160 (is about 2000 in one embodiment

).Described sacrifice layer provides the filling material removed of etching and do not influence the space of other material easily.In one embodiment, sacrifice layer 160 is a molybdenum.Other example that is used for the suitable material of sacrifice layer comprises polysilicon, amorphous silicon or photoresist.In the final step of making, etching is removed sacrifice layer 160 to form air gap between removable minute surface and oxide skin(coating) 156,158.Patterning and etching to sacrifice layer 160 are used in formation hole and groove in the layer, so that form the post and the track that will support removable minute surface.Can apply planar materials 162 with filler opening and form post.Finally, form the mechanical diaphragm 164/166 that contains removable minute surface.In one embodiment, (be about 500 in one embodiment by aluminium lamination 164

) be that nickel dam (is about 1450 in one embodiment subsequently ) 166 form mechanical diaphragm 164/166.In certain embodiments, adding of the better adhesion of extra aluminium lamination on the nickel dam with the photoresist that uses during providing patterning.After the sacrifice layer 160 in the structure that etching removal Fig. 9 describes, obtain to be similar to the interferometric modulator that Fig. 7 A describes.In certain embodiments, before adding other layer, can add dark mask layer to transparent substrates 152.The described dark mask layer of patternable is to reduce from the reflection of the part (for example, post or track) of structure.In certain embodiments, dark mask layer comprises MoCr layer and oxide skin(coating).Be understood by those skilled in the art that, can use patterning and etching step except that those steps mentioned in this article to form interferometric modulator.In addition, will understand, other structure of interferometric modulator is possible, for example the example described of Fig. 7 B-7E.

Figure 10 A-10D describes to contain the example based on the process control monitor of etalon of some material layer discussed above.The process control monitor that Figure 10 A describes contains 164/166 layer on 156/158 layer of 150 layers of ITO154 layer, chromium, the oxide being deposited on each other the top that deposit on the substrate 152 and mechanical diaphragm.Partial reflection chromium layer 150 and reflectivity machinery diaphragm 164/166 form etalon, and its reflectivity can be measured from the bottom side of substrate 152.Analyze the thickness of 150 layers of the spectrum of light of the reflection of etalon from then on or combination thickness that its color can provide 156/158 layer of oxide and refractive index thereof and chromium and the indication of reflectivity.To understand, this configuration approaches the configuration of acquisition when interferometric modulator is in state of activation (that is, minute surface collapses to oxide skin(coating)).Therefore, assess the indication that these process control monitors will provide the interferometric modulator produced by described process by use whether will have the spectral characteristic of required activation.

The process control monitor that Figure 10 B describes is made up of ITO154, chromium 150, oxide 156/158 and sacrifice layer 160.Mention as mentioned, sacrifice layer 160 can be molybdenum, and it has reflectivity in essence.Therefore, form etalon by partial reflection chromium layer 150 and reflectivity sacrifice layer 160.Except the identical parameters about 156/158 layer of oxide and the interferometric modulator state that activates discussed above is provided, come the reflectivity of process control monitor since then that information about sacrifice layer 160 can be provided.The thickness that will depend on for instance, sacrifice layer 160 from the reflectivity of sacrifice layer 160.In certain embodiments, remove sacrifice layer 160 by etching, and analyze 156/158 layer of remaining ITO154 layer, 150 layers of chromium and oxide with determine sacrifice layer 160 whether with remaining layer in arbitrary layer of interaction.

The process control monitor that Figure 10 C describes contains 164/166 layer on ITO154 layer, 150 layers of chromium, 156/158 layer of oxide, 162 layers on plane and mechanical diaphragm.Form etalon for 164/166 layer by 150 layers of chromium and mechanical diaphragm.Analyze catoptrical spectrum and it is compared with the result who obtains at the process control monitor among Figure 10 A, the refractive index and the thickness thereof of planar materials can be provided.In addition, come the optic response of process control monitor since then will approach the optic response that causes by the zone that has post or track in the interferometric modulator array.

The process control monitor that Figure 10 D describes contains 164/166 layer on ITO154 layer, 150 layers of chromium, 162 layers on plane and mechanical diaphragm.Form etalon for 164/166 layer by 150 layers of chromium and mechanical diaphragm.Analyze catoptrical spectrum the refractive index of planar materials 162 and the thickness of plane 162 materials can be provided.Can provide the information about oxide skin(coating) 156/158 (for example, refractive index and thickness) with the process control monitor comparison of Figure 10 D.

When forming mentioned above process control monitor based on etalon by deposition identical with patterning step and patterning step with the deposition that is used to make interferometric modulator, for example when it is formed on the same substrate 106 as interferometric modulator array 108 (see figure 8)s, then can apply suitable patterning, make unwanted layer etching in the process control monitor removed.For instance, in the process control monitor that Figure 10 A describes, but the sacrifice layer 160 and plane 162 materials of deposition are during manufacture removed in etching.In certain embodiments, remove layer etching with during preventing to handle in may the need protection zone of process control monitor.For instance; the planar materials that patternable deposited or from the material of mechanical diaphragm 164/166; make it be retained on the edge of process control monitor, when the needs acquisition contains the process control monitor of sacrifice layer 160, during release etch, to protect sacrifice layer 160.

Be understood by those skilled in the art that many other combinations of the layer that in optical property (for example, interventionist nature) can provide process control monitor about the information of the respective material that forms during the manufacturing of MEMS device, deposits.

Non-process control monitor based on etalon

In certain embodiments, structure does not contain the process control monitor of two reflective surface will that form etalon.In these process control monitors, can obtain information by reflectivity and/or transmissivity measurement about material in the monitor.These reflectivity and/or transmittance values can be relevant with film thickness.In certain embodiments, process control monitor is by forming with MEMS device identical materials deposition step, and therefore contains some material layer at least in the material layer that can find in the MEMS device.The number of the layer of finding in process control monitor in certain embodiments, is less than the number of finding in the MEMS device.The reflectivity of these structures and/or transmission characteristics can help to be identified in any mistake that takes place during the element that is comprised in the processing procedure control monitor configuration.Can use any suitable detecting device (for example, reflectometer, photodetector, spectrometer or tintmeter) to assess these process control monitor structures.In one embodiment, use surface integral device and reflectometer to measure the reflectivity of film.These process control monitor structures make it possible to monitor that the processing of individual elements in the MEMS structure is to determine any mistake and optimization manufacture process.

Figure 11 A-11G describes one group of example of non-process control monitor based on etalon, described non-process control monitor based on etalon contain be less than interferometric modulator that Fig. 9 for example describes and make during all material layer of deposition.The process control monitor of Figure 11 A is made up of the ITO layer 154 and the chromium layer 150 that are deposited on the substrate 152.The reflectivity of this process control monitor provides the indication of the transparency of the thickness of chromium layer 150 and ITO layer 154.For making chromium layer 150 serve as partial reflection minute surface in the interferometric modulator, the film of component part reverberator can be extremely thin.For instance, described film can have about 70

Thickness.The thickness of this film is difficult to measure and checking.Therefore, in one embodiment, determine the thickness of chromium layer 150 by the reflectivity in the process control monitor middle level among the survey sheet 11A.When the thickness of film increases, reflectivity will increase.Therefore, come calibration membrane thickness, can easily from the reflectivity that records, determine thickness by using the reflectivity that records at given material.The optical property of the process control monitor of Figure 11 A is also near observed optical property between the row of having removed mechanical diaphragm and oxide skin(coating) in interferometric modulator array.Therefore, these process control monitors can be used for determining that the row intersexuality verifies in whether array can be accepted as display.

In another embodiment, the process control monitor that only contains chromium layer 150 on the substrate 152 can be used for determining the reflectivity of chromium layer 150, and therefore determines the thickness of chromium layer 150.The measured value of this process control monitor can be compared to determine the optical property of ITO layer 154 with those measured values that the process control monitor of describing at Figure 11 A obtains.For instance, from the reflectivity on the ITO layer 154 surface ratio of the reflectivity of two process control monitors in proportion to.In certain embodiments, if the treatment conditions of interferometric modulator can not be used to produce the layer that chromium is only arranged, so can with the wafer of the wafer-separate that is used to make interferometric modulator on make the process control monitor that chromium is only arranged.

Figure 11 B describes another embodiment of non-process control monitor structure based on etalon, and it is made up of ITO layer 154, chromium layer 150 and oxide skin(coating) 156/158.This structure can be used for measuring the optical characteristics of ITO-chromium-combination of oxides.For instance, measure the indication that the combination decay that is caused by ITO layer 154, chromium layer 150 and oxide skin(coating) 156/158 is provided by the transmissivity of process control monitor.The optical characteristics that relatively can be used for layer of isolation oxide 156/158 of the measured value of process control monitor among the measured value of this process control monitor structure and Figure 11 A.Except the information about the optical characteristics of oxide skin(coating) 156/158 is provided, the described thickness that more also can be used for determining oxide skin(coating) 156/158 (for example, lower transmissivity will indicate thicker oxide skin(coating) 156/158).The optical property of the process control monitor among Figure 11 B is also near observed those optical properties in the zone of etch release hole in the mechanical diaphragm in interferometric modulator array.

Figure 11 C describes another embodiment of the process control monitor structure be made up of mechanical membrane lamella 164/166.This process control monitor can be used for isolating the reflectivity properties with measurement mechanical membrane layer 164/166.

Figure 11 D only describes the another embodiment of the process control monitor be made up of the sacrifice layer 160 that is deposited on the substrate 152.This process control monitor can be used for measuring the characteristic of independent sacrifice layer 160, comprises its thickness.Can before any release etch, analyze this process control monitor.Perhaps can on sacrifice layer 160, deposit the protectiveness material layer with protection sacrifice layer 160 during release etch.

Figure 11 E describes to have oxide skin(coating) 156/158, another embodiment of the process control monitor of planar materials 162 and mechanical membrane lamella 164/166.The reflectivity of this process control monitor is near observed reflectivity between the row that has formed otch in interferometric modulator array in 158 layers of ITO154 layer and chromium.

Figure 11 F describes to have ITO layer 154, the embodiment of the process control monitor of chromium layer 150 and mechanical diaphragm 164/166.Because chromium layer 150 and mechanical membrane lamella 164/166 will be used as reverberator jointly, so the reflectivity of this process control monitor can provide the information about transparency, thickness and the refractive index of ITO layer 154.In addition, the reflectivity of this process control monitor and the reflectivity of Figure 11 A can be compared to isolate the optical property of chromium layer 150.In other words, the result who tests this process monitor can be used for deducting the optical effect of the ITO layer 154 in the process control monitor of Figure 11 A.

Figure 11 G describes to comprise the another embodiment of the process control monitor of oxide skin(coating) 156/158 and mechanical membrane lamella 164/166.Because mechanical membrane lamella 164/166 is as the strong reflection device, this process control monitor can be used for determining transparency, thickness and the refractive index of oxide skin(coating) 156/158.

About process control monitor, can form above-described non-process control monitor by deposition and the patterning step identical with patterning step with the deposition that is used to make interferometric modulator based on etalon based on etalon.Can apply suitable patterning, make etching remove unwanted layer in the process control monitor.In addition, can apply suitable protection at etching.

Be understood by those skilled in the art that many other combinations of the layer that in optical property (for example, reflectivity and/or transmissivity) can provide process control monitor about the information of the respective material that forms during the manufacturing of MEMS device, deposits.

The release etch process control monitor

Can use release etch or steric course control monitor to monitor the speed and the degree of the release etch process during MEMS makes.Figure 12 describes to contain the wafer 200 of interferometric modulator array 202 and a series of process control monitor 204,206 and 208.Interferometric modulator array 202 contains many posts 210 and track 212 with the supported mechanical diaphragm.A series of etch-holes 214 are formed in the mechanical diaphragm, make that etchant can arrive sacrifice layer during release etch.Make successfully for making, should remove sacrifice layer fully from array region.Therefore, in one embodiment, provide process control monitor to monitor the speed and the degree of release etch.

In process control monitor 206, describe this kind process control monitor.This process control monitor 206 by be present in array 202 in the identical interferometric modulator structure of interferometric modulator structure form, yet, only with single hole 216 patternings in mechanical diaphragm.Distance between the edge of hole 216 and process control monitor 206 is greater than the distance between the hole in the interferometric modulator array 202 214.Because process control monitor 206 only contains single hole 216 rather than a plurality of hole 214, so remove in the time quantum that whole sacrifice layer spent in the array 202 and can not remove all sacrifice layers from process control monitor 206 in the release etch agent.When the etching in the process control monitor 206 is carried out, to observe from the side relative of substrate with handling side, the zone of having removed sacrifice layer in the process control monitor will form contrast with the zone of etchant no show still on color.(for example, molybdenum under) the situation, this contrast is because due to the formed various criterion tool using the reflectivity sacrifice layer.At sacrifice layer still where, between chromium layer and reflectivity sacrifice layer, will form etalon.In the place of removing sacrifice layer, between chromium layer and reflectivity machinery diaphragm, will form etalon.Therefore, will be (for example at the local observed color of removing sacrifice layer near the color of un-activation interferometric modulator, and will be near the color (for example, dark state) of the interferometric modulator of activation bright state), at the local observed color that keeps sacrifice layer.216 center will provide measuring of etching degree to the distance (for example, radius) on the border that color changes from the hole.This process control monitor can be used for measuring during process itself (that is original position) or it finishes etch-rate and degree afterwards.

Process control monitor 208 is described similar etching dispose procedure control monitor.In this process control monitor, a plurality of holes 218 are formed in the mechanical diaphragm, yet the distance between each hole 218 is greater than the distance between the hole in the interferometric modulator array 202 214.Therefore, process control monitor 208 will not finished as yet after removing whole sacrifice layer from interferometric modulator array 202.Can from process control monitor 208, measure the distance of indicating the etching degree in the center in each hole 218.

Above-described etching dispose procedure control monitor can be taked any suitable shape.For instance, substitute the structure that is similar to the structure of finding in interferometric modulator array, process control monitor can be made up of belt shape 250, and one or more holes 252 are wherein arranged in mechanical diaphragm, describes as Figure 13 A.Then can be by determining from the hole 252 along measuring etched degree with 250 air line distances that arrive the place that etchings have extended to.In another embodiment, describe as Figure 13 B, alternative have round-shaped hole, and the hole with rectangular channel 254 shapes is formed on is with in 250.A plurality of grooves 254 of the width (for example, 3 μ m, 4 μ m, 5 μ m) with variation are provided in certain embodiments.

In certain embodiments, can so that being provided, sealing prevent that the release etch agent from arriving sacrifice layer from the edge at patterning complanation or other protectiveness material around the edge of process control monitor.Therefore, will only remove sacrifice layer by the etchant that enters etch release hole.In certain embodiments, but the mechanical diaphragm electricity in the etching dispose procedure control monitor is shorted to ITO/ chromium layer.

Can use above-described process control monitor by visually observing process control monitor or also following with the account form analysis image by electronic imaging process control monitor (for example by using the CCD camera), measure etched degree, so that measure robotization.In certain embodiments, the post in the process control monitor can be used as the vernier that is used for determining the etching degree.For instance, post can form in process control monitor and have known distance each other.Then can be used for the approximate treatment distance along number from the post of the straight line at center, hole.In certain embodiments, can be used for providing more accurate measured value than the more highdensity post of the post that forms in the interferometric modulator.Be understood by those skilled in the art that many other shapes and the structure that can be used for measuring the etching degree.

Visual organ is faced in the interferometric modulator process control

In one embodiment, by using the process control monitor of forming by interferometric modulator can determine the interventionist nature (for example, catoptrical spectrum) of interferometric modulator with enhancing stability.Can construct this process control monitor, make mechanical diaphragm be difficult to move, and therefore fixing on the position, thus static etalon formed.In one embodiment, can replace sacrifice layer, form this process control monitor by using transparent in fact dielectric layer (for example, oxide skin(coating)).Therefore reflectivity machinery diaphragm will and be in fixing position against dielectric layer.Can advantageously make this process control monitor discretely with the display interferometric modulator array, but the thicker oxide skin(coating) of oxide skin(coating) of deposition during making the deposition rate typical interferometric modulator make.

In another embodiment, formation can be by depositing the process control monitor made from display interferometric modulator array identical materials.For instance, describe, can construct the process control monitor 204 that comprises than the more highdensity post of finding in the interferometric modulator array 202 220 of post as Figure 12.The higher density of post 220 provides the inplace stability of increase to the mechanical diaphragm of its support.Therefore, even under the applying of current potential (for example, less than about 10 volts, 15 volts or 20 volts), the mechanical diaphragm in the process control monitor 204 will be resisted to the moving of ITO layer, thereby and reflects the spectrum of identical light.As used herein, " post " means any intermittent structure that can be used for the supported mechanical diaphragm.Therefore, expectation " post " comprises " point " structure of being made up of the vertical line structure in essence.Also expectation " post " comprises the structure of being made up of vertical material band in essence (also being known as track).

Process control monitor (for example mentioned above) with stabilizing mechanical diaphragm can be used for the optimization manufacturing to produce the interferometric modulator of the spectrum that will reflect required light.In addition, this process control monitor provides the quick check to the success of manufacture process.In certain embodiments, go out to reflect in fabrication process yields under the situation of interferometric modulator array (for example, being used for multicolor display) of different color, can use a plurality of above-described process control monitors, its each reflect corresponding color.Perhaps, can form single process control monitor, it has different zones, wherein each zone have with other zone in the different post of height of post.Therefore, the light of different color will be reflected in each zone.

The thickness process control monitor

Use the process control monitor of another type to measure the thickness of each layer of deposition during handling.In one embodiment, make the thickness process control monitor, make that single step is formed on the top from substrate to the process control monitor.Therefore the bench height of single step will be corresponding to the combination thickness of all layers that are in the step position of process control monitor.The limiting examples of the layer that can deposit comprises complanation, the mechanical membrane lamella on the oxide skin(coating) and the mechanical membrane lamella on the sacrifice layer on the oxide skin(coating) on ITO layer and chromium layer, oxide skin(coating), sacrifice layer, the sacrifice layer.

In another embodiment, form the multilayer process control monitor, make to form to have piling up of stairway step pattern contour.Bench height will be corresponding to the thickness of one or more sedimentary deposits.For instance, the process control monitor of gained can have the structure that is similar to Figure 14.The process control monitor of Figure 14 contains each layer, for example layer of describing among Fig. 9 of deposition during interferometric modulator is made.Described process control monitor provides the step corresponding to the thickness of ITO layer 154, chromium layer 150, oxide skin(coating) 156/158, sacrifice layer 160, planar materials 162 and mechanical diaphragm 164/166.The thickness of each step can be in the single sweep operation of suitable thickness measurement technique, measured, and each layer needn't be in independent process control monitor, measured.In limiting examples, for example can use can from KLA-Tencor buy based on the surperficial duplicator of contact pilotage (for example, therefore profilograph) measure bench height by the single sweep operation of contact pilotage, and determine the thickness of each layer of in the particular interferometric modulator manufacture process, depositing fast.The stairway step pattern has reduced bounce-back naturally that runs into when using profilograph, thereby and with individually scan each layer and compare and improved precision.Those skilled in the art will realize that and in many stairway steps pattern, can use any layer combination.Therefore, do not need to be included in all layers that deposit during interferometric modulator is made.

Figure 15 describes another embodiment of thickness process control monitor.This process control monitor also has the stairway step profile; Yet, the in height not dull increase of formed stairway step pattern.An advantage of this pattern is that bench height can form closer corresponding to the actual (real) thickness that exists in some interferometric modulator.Except layer discussed above, the process control monitor of Figure 15 also contains dark mask layer 275.Can in interferometric modulator, use dark mask layer 275 to suppress from the reflection of some static structures (for example post and track).In this embodiment, can on dark mask layer 275, deposit extra oxide skin(coating) 277.

Step 300 among Figure 15 is corresponding to the combination thickness of all oxides layer (277,156 and 158) and dark mask layer 275.This step and step 302 can be compared to determine the thickness of dark mask layer 275.The absolute altitude of step 304 provides oxide skin(coating) 277,156 and 158 and the combination thickness of 150 layers of ITO154 layer and chromium.The thickness that 150 layers of combined I TO154 layer and chromium relatively are provided with step 302.Step 306 provides the thickness that is deposited on the oxide skin(coating) 156/158 on 150 layers of ITO154 layer and the chromium.Step 308 is corresponding to the thickness of mechanical diaphragm 164/166.The absolute altitude of step 308 also will be when being in state of activation and mechanical diaphragm 164/166 when interferometric modulator and caving on oxide skin(coating) 158 combination thickness of material.Step 310 is corresponding to the combination thickness of mechanical diaphragm 164/166 and planar materials 162.The thickness that relatively can be used for determining planar materials 162 with step 308.Step 312 is corresponding to the thickness of sacrifice layer 160.Finally, step 314 is corresponding to the thickness of planar materials 312.The absolute altitude of step 314 also corresponding to when interferometric modulator is in unactivated state machinery diaphragm 164/166 the position.

In certain embodiments, form the polychrome interferometric modulator display.This kind multicolor display uses the interferometric modulator with different gap degree of depth to reflect different color.For instance, can adopt have three kinds of different gap degree of depth be suitable for main reflection Red, green or blue interferometric modulator.A kind of method that forms this multicolor display is deposition and three sacrifice layers of patterning before deposition plane material and mechanical membrane lamella.The patterning of sacrifice layer can make and keep single layer at one group of interferometric modulator, keeps two layers at another group interferometric modulator, and keeps three layers at final one group of interferometric modulator.After mechanical diaphragm of deposition and release etch, will form the less clearance degree of depth, wherein form single sacrifice layer, will form the mid-gap degree of depth, wherein form two sacrifice layers, and will form big gap depth, wherein form three sacrifice layers.Figure 16 describes to can be used for measuring the thickness process control monitor of the layer thickness that forms during this three sacrifice layers process of use.Except sacrifice layer 160, also form sacrifice layer 279 and 281.Be understood by those skilled in the art that sacrifice layer 160,279 and 281 can deposit in order, or utilization peel off or during etch-back techniques with different order depositions.Step 350 is corresponding to the combination thickness of all oxides layer (277,156 and 158) and dark mask 275.This step and step 352 can be compared to determine the thickness of dark mask 275.The absolute altitude of step 354 provides oxide skin(coating) 277,156 and 158 and the combination thickness of 150 layers of ITO154 layer and chromium.The thickness that 150 layers of combined I TO154 layer and chromium relatively are provided with step 352.Step 356 and relatively providing of step 354 are deposited on the thickness of the oxide skin(coating) 156/158 on 150 layers of ITO154 layer and the chromium.Step 358 is corresponding to the thickness of mechanical diaphragm 164/166.The absolute altitude of step 358 is the combination thickness of material when being in state of activation and mechanical diaphragm 164/166 when interferometric modulator and caving on oxide skin(coating) 158 also.Step 360 is corresponding to the combination thickness of mechanical diaphragm 164/166 and planar materials 162.The thickness that relatively can be used for determining planar materials 162 with step 358.

Step 362 is corresponding to the combination thickness of mechanical diaphragm 164/166 and single sacrifice layer 160.The thickness that sacrifice layer 160 relatively is provided of step 362 and step 358.The absolute altitude of step 362 also corresponding to when the interferometric modulator with minimum clearance degree of depth is in unactivated state machinery diaphragm 164/166 the position.The absolute altitude of step 364 is corresponding to the combined altitudes on the post between two interferometric modulators that have the minimum clearance degree of depth in interferometric modulator array.The height that post relatively is provided of step 364 and step 358.In a similar fashion, step 366 is corresponding to mechanical diaphragm 164/166 and the one 160 and the combination thickness of the 2 279 sacrifice layer.The thickness that second sacrifice layer 279 relatively is provided of step 366 and step 362.The absolute altitude of step 366 also corresponding to when the interferometric modulator with mid-gap degree of depth is in unactivated state machinery diaphragm 164/166 the position.The absolute altitude of step 368 is corresponding to the combined altitudes on the post between two interferometric modulators that have the mid-gap degree of depth in interferometric modulator array.The height that post relatively is provided of step 368 and step 358.Step 370 is corresponding to mechanical diaphragm 164/166 and the one 160, the 2 279 and the combination thickness of the 3 281 sacrifice layer.The thickness that the 3rd sacrifice layer 281 relatively is provided of step 370 and step 366.The absolute altitude of step 370 also corresponding to when the interferometric modulator with maximal clearance degree of depth is in unactivated state machinery diaphragm 164/166 the position.The absolute altitude of step 372 is corresponding to the combined altitudes on the post between two interferometric modulators that have the maximal clearance degree of depth in interferometric modulator array.The height that post relatively is provided of step 372 and step 358.

The process control monitor of Figure 16 provides the accurate measurement to the gap depth that is produced by the particular interferometric modulator manufacture process.The gap depth that measurement obtains corresponding to indivedual thickness of three sacrifice layers of accumulation aspect ratio measurement of the sacrifice layer of medium and big gap depth interferometric modulator will provide the indication of more accurate gained gap depth.If three layers of independent measurement, when thickness being added together with the acquisition total backlash degree of depth, the localized variation of the thickness of each layer will be for compound so.By contrast, the process control monitor of Figure 16 provides the single measurement of sacrifice layer combination thickness, thereby has reduced the error that is caused by each independent sacrifice layer localized variation.

In the embodiment of Figure 15 and 16, mechanical diaphragm 164/166 is used in the sacrifice layer 160 in the protection process control monitor during the release etch.Therefore, in certain embodiments, can after release etch, assess the thickness process control monitor.In some other embodiment, can before release etch, assess the thickness process control monitor.If the result indicates one or more layer thicknesses that problem is arranged, can before release etch, abandon wafer so, thereby save time and money.

Be understood by those skilled in the art that, can produce many other stairway step patterning process control monitors.Also will understand, and can build and contain the thickness process control monitor that is less than all layers in the MEMS device.

Although with reference to embodiment and case description the present invention, should be appreciated that, can under the situation that does not break away from spirit of the present invention, make many various modifications.Therefore the present invention is only limited by appended claims.

Claims

1. the method for the thickness of the layer that during making MEMS (micro electro mechanical system), deposits of a measurement, it comprises:

Form test cell, described test cell comprises successive sedimentation above each other two or more than two layers, wherein said layer is to use the method that is used for forming described layer during making described MEMS (micro electro mechanical system) to form, and wherein said layer is patterned so that at least two steps are formed in the profile of described test cell; With

By the inswept described test cell of profilograph being measured the height of described step.

2. method according to claim 1 wherein forms described test cell and comprises application and be used to make the material deposition of described MEMS (micro electro mechanical system) and the material deposition and the patterning step of patterning step same sequence.

3. method according to claim 1, wherein once with the inswept described test cell of described profilograph.

4. method according to claim 1, wherein said MEMS (micro electro mechanical system) are interferometric modulator.

5. one kind is used to measure at the test cell of making a plurality of layers the thickness that deposits during the interferometric modulator, and it comprises and is stacked on top each other so that the layer of at least two steps in the profile that forms described test cell.

6. test cell according to claim 5, the step in the wherein said test cell increases monotonously from a side of described profile to opposite side and then reduces monotonously.

7. test cell according to claim 5, it comprises a plurality of sacrifice layers, described sacrifice layer determines to be formed at the degree of depth in the gap in the described interferometric modulator.

8. test cell according to claim 5, it comprises sacrifice layer and mechanical diaphragm, wherein said mechanical diaphragm is suitable for the described sacrifice layer of protection during the release etch process.

9. test cell according to claim 5, it comprises the otch that is arranged at least one layer, makes described otch form step downward in the profile of described test cell.

10. test cell according to claim 5, at least one step in the wherein said test cell is by one or form more than a dielectric layer.

11. test cell according to claim 5, at least one step in the wherein said test cell is made up of the mechanical membrane chip architecture.

12. test cell according to claim 5, the height of at least one step in the wherein said test cell are determined by the thickness of sacrifice layer in fact.

13. test cell according to claim 5, the height of at least one step in the wherein said test cell are determined by the thickness of planar materials in fact.

14. a wafer, it comprises:

A plurality of reflectivity display elements, it is used for display, and described reflectivity display element comprises a plurality of material layers; With

Test cell, it comprises described a plurality of material layer, described a plurality of material layers are stacked on each other the top so that form at least two steps in the profile of described test cell.

The method of test cell structure 15. a micro-electro-mechanical systems of making combination is unified, it comprises:

Form mems structure, wherein form described mems structure and comprise one or more than a material deposition and patterning step, wherein said mems structure comprises a plurality of layers; Form test cell simultaneously, wherein form described test cell and comprise described one or more than material deposition and patterning step, wherein said test cell comprises described a plurality of layer so that form at least two steps in the profile of described test cell.

The test cell structure 16. the micro-electro-mechanical systems by the combination of method production according to claim 15 is unified.

17. a wafer, it comprises:

A plurality of first members are used for reflected light to be used for display; With

Second member is used for measuring at the thickness of making at least one material that deposits during described first member by method according to claim 1.

18. wafer according to claim 17, wherein said first member comprises interferometric modulator.

19. according to claim 17 or 18 described wafers, wherein said second member comprises test cell, described test cell comprises a plurality of material layers, and described a plurality of material layers are stacked on each other the top so that form at least two steps in the profile of described test cell.

20. wafer of producing by the process that comprises the steps:

Deposition and a series of material layers of patterning are to form mems structure on substrate; With

Simultaneously on described substrate deposition and the described series material layer of patterning with the formation test cell, wherein after described patterning in the described test cell remaining material layer form at least two steps in the profile of described test cell.

21. a test is used to make the method for the process of polychrome interferometric modulator display, wherein make the interferometric modulator of different color in the described display by the gap that between partial reflection device and reflectivity machinery diaphragm, forms different depth, wherein determine the degree of depth in described gap by the deposition of at least one sacrifice layer, wherein by determine the degree of depth at least one gap in the described gap more than the deposition of a sacrifice layer, described method comprises:

Form test cell, at least one zone of wherein said test cell comprises and is deposited on the described more than a sacrifice layer of top each other;

Measure the profile of described test cell; With

Determine described cumulative thickness from described profile more than a sacrifice layer.

22. method according to claim 21 wherein forms described test cell and comprises:

Deposit described in order more than a sacrifice layer; With

After each sacrifice layer deposition and depositing each sacrifice layer of patterning before another sacrifice layer, to form the zone that existing of described test cell is less than all described sacrifice layers more than a sacrifice layer.

23. method according to claim 21 wherein forms described test cell and is included in the described mechanical diaphragm of deposition on the described test cell, so that protect described sacrifice layer during the interferometric modulator release etch.

24. method according to claim 21, the profile of wherein measuring described test cell comprises:

Measure the thickness of described test cell in comprising the zone of single sacrifice layer;

Measure the thickness of described test cell in the zone that comprises two sacrifice layers; With

Measure the thickness of described test cell in the zone that comprises three sacrifice layers.

25. test cell that is used to test the process that is used to make the polychrome interferometric modulator display, wherein make the interferometric modulator of different color in the described display by the gap that between partial reflection device and reflectivity machinery diaphragm, forms different depth, wherein determine the degree of depth in described gap by the deposition of at least one sacrifice layer, wherein by determine at least one the degree of depth in the described gap more than the deposition of a sacrifice layer, described test cell comprises a plurality of material layers above being positioned at each other, a zone of wherein said test cell comprises single sacrifice layer, the second area of described test cell comprises two sacrifice layers above being positioned at each other, and the 3rd zone of described test cell comprises three sacrifice layers above being positioned at each other.

26. test cell according to claim 25, wherein said test cell comprise described mechanical diaphragm, described mechanical diaphragm is deposited on the described test cell so that protect described sacrifice layer during the interferometric modulator release etch.

27. test cell according to claim 25, wherein said test cell comprises at the planar materials that comprises between the zone of sacrifice layer.