CN100538800C - Test method, system and the equipment of a plurality of interferometric modulators and make the method for this system - Google Patents

Abstract

The present invention discloses the various system and methods that display is carried out illumination.In one embodiment, for example, a kind of method comprises to interferometric modulator and applies voltage waveform, apply potential pulse to described interferometric modulator, detect the reflectivity of light from described interferometric modulator reflection, with one or more mass parameters of determining described interferometric modulator based on described detection reflection of light rate, the wherein said potential pulse that applies impel described interferometric modulator activate and unactivated state between or between unactivated state and state of activation, change.

Description

Test method, system and the equipment of a plurality of interferometric modulators and make the method for this system

Technical field

The field of the invention relate to MEMS (micro electro mechanical system) (microelectromechanical system, MEMS).

Background technology

MEMS (micro electro mechanical system) (MEMS) comprises micromechanical component, activator appliance and electronic component.Can use deposition, etching and/or other etching remove substrate and/or deposited material layer part or add layer and produced micromechanical component with a micro fabrication that forms electric installation and electromechanical assembly.One type MEMS device is called interferometric modulator.As used herein, term interferometric modulator or interferometric light modulator refer to a kind of use principle of optical interference and optionally absorb and/or catoptrical device.In certain embodiments, interferometric modulator can comprise the pair of conductive plate, and one of them or both may be transparent in whole or in part and/or be had reflectivity, and can carry out relative motion when applying suitable electric signal.In a particular embodiment, a plate can comprise the fixed bed that is deposited on the substrate, and another plate can comprise the metallic film that is separated with fixed bed by air gap.As described in more detail, plate can change the optical interference that is incident on the light on the interferometric modulator with respect to the position of another plate.With useful be, can measure the parameter of its performance of indication of interferometric modulator, whether be suitable for application-specific to determine it.The performance of test MEMS interferometric modulator is for making problem and identify that defective modulator is useful in the manufacture process early detection of display product before incorporating into the MEMS interferometric modulator in the display product.

Summary of the invention

System of the present invention, method and apparatus respectively have some aspects, and the attribute of its expectation all not only is responsible in wherein any single aspect.Under the situation that does not limit the scope of the invention, existing with its outstanding feature of brief discussion.Consider after this argumentation, and especially be entitled as after the part of " embodiment " how to provide the advantage that is better than other display device with understanding feature of the present invention in reading.

In one embodiment, a kind of method of testing a plurality of interferometric modulators comprises: apply voltage waveform to interferometric modulator, to change described interferometric modulator between activation and unactivated state or between unactivated state and state of activation; Detection is from the light of interferometric modulator reflection; With one or more response time parameters of determining described interferometric modulator based on described detection.

In another embodiment, a kind of system that is used to test a plurality of interferometric modulators comprises: light source, and it is suitable for providing incident light to a plurality of interferometric modulators; Voltage source, it is suitable for applying voltage waveform to described interferometric modulator, to change described interferometric modulator between activation and unactivated state or between unactivated state and state of activation; Fluorescence detector, it is suitable for detecting from the light of described a plurality of interferometric modulators reflections and produces signal corresponding to described detected light; And computing machine, it is configured to receive the signal from described fluorescence detector, and determines one or more response time parameters of described interferometric modulator based on described signal.

In another embodiment, a kind of system that is used to test a plurality of interferometric modulators comprises: the member that is used for providing to described a plurality of interferometric modulators light; Be used for applying voltage waveform between activation and unactivated state or between unactivated state and state of activation, to change the member of described interferometric modulator to described interferometric modulator; Be used to detect member from the light of described a plurality of interferometric modulator reflections; Be used to produce member corresponding to the signal of described detected light; With the member that is used for determining one or more response time parameters of described interferometric modulator based on described signal.

In another embodiment, the method that a kind of manufacturing is used to test the system of a plurality of interferometric modulators comprises: settle light source, described light source is suitable for providing incident light to a plurality of interferometric modulators; Settle voltage source, described voltage source is suitable for applying voltage waveform to described interferometric modulator, to change described interferometric modulator between activation and release conditions or between release conditions and state of activation; Settle fluorescence detector, described fluorescence detector to be suitable for detecting and produce signal corresponding to described detected light from the light of described a plurality of interferometric modulators reflections; With the arrangement computing machine, described computing machine is configured to receive the signal from described fluorescence detector, and determines one or more response time parameters of described interferometric modulator based on described signal.

In another embodiment, a kind of method of testing a plurality of interferometric modulators comprises: apply voltage waveform to described interferometric modulator, to change described interferometric modulator between state of activation and the release conditions or between release conditions and state of activation, wherein when standing bias voltage, described interferometric modulator is applied for the state that changes described interferometric modulator and the voltage that applies; When applying described voltage waveform, detect from the light of described interferometric modulator reflection; With one or more response time parameters of determining at least a portion in the described interferometric modulator based on described detection of reflected light.

In another embodiment, a kind of system that is used to test a plurality of interferometric modulators comprises: voltage source, it is configured to apply voltage waveform to described interferometric modulator, to change described interferometric modulator between activation and unactivated state or between unactivated state and state of activation; Light source, it is through locating with the described interferometric modulator that throws light on; Detecting device, it is through settling receiving the light from described interferometric modulator, and produces corresponding signal; And computing machine, it is configured to receive the signal from described detecting device, and determines one or more response time parameters of described interferometric modulator during applying activation voltage or release voltage based on described signal.

In another embodiment, a kind of system that is used to test a plurality of interferometric modulators comprises: be used for to described interferometric modulator apply voltage waveform with activating and unactivated state between or between unactivated state and state of activation, change the member of described interferometric modulator; The member of described interferometric modulator is used to throw light on; Be used for sensing from the light of described interferometric modulator reflection and produce the member of corresponding signal; With the member that is used for determining one or more response time parameters of described interferometric modulator during applying activation voltage or release voltage based on described signal.

In another embodiment, the method that a kind of manufacturing is used to test the system of a plurality of interferometric modulators comprises: voltage source is provided, described voltage source is configured to apply voltage waveform to described interferometric modulator, to change described interferometric modulator between activation and release conditions or between release conditions and state of activation; Positioned light source is with the described interferometric modulator that throws light on; Positioning detector is to receive from the light of described interferometric modulator reflection, and described detecting device is configured to produce the signal corresponding to the described light that receives; With computing machine is coupled to described detecting device, described computing machine is configured to receive the signal from described detecting device, and determines one or more response time parameters of described interferometric modulator during applying activation voltage or release voltage based on described signal.

In another embodiment, a kind of method of testing a plurality of interferometric modulators comprises: set and apply the time cycle that switching voltage levels continues, described switching voltage levels is enough to changing described interferometric modulator between release conditions and the state of activation or between state of activation and release conditions; Apply the voltage waveform that comprises described switching voltage levels and continue the described time cycle; Detection is from the light of described interferometric modulator reflection; Determine one or more response time parameters of described interferometric modulator based on described detection; With repeat described setting, apply, detection and determining step reach the minimum time cycle that threshold value is continued with identification, the intended pixel number that described threshold value indication has activated or discharged.

In another embodiment, a kind of system that is used to test a plurality of interferometric modulators comprises: computing machine, it is configured to determine to apply the time cycle that switching voltage levels continues, and described switching voltage levels is enough to changing described interferometric modulator between unactivated state and the state of activation or between state of activation and unactivated state; Voltage source, it is by described computer control, and described voltage source is configured to apply the voltage waveform that comprises described switching voltage levels and continues the described time cycle; Light source, it is through locating with the described interferometric modulator that throws light on; And detecting device, the light that it reflects from described interferometric modulator with reception through the location, and generation is corresponding to the signal of the described light that receives, wherein said computing machine receives the signal from described detecting device, and determine one or more response time parameters based on described signal, and described computing machine further is configured to repeatedly the time cycle that applying of control waveform continue to be determined, thereby the number that is identified in the pixel that has activated during described definite time cycle or discharged reaches the minimum time cycle that threshold value continues.

In another embodiment, a kind of system that is used to test a plurality of interferometric modulators comprises: be used to determine to apply the member of the time cycle that switching voltage levels continues, described switching voltage levels is enough to changing described a plurality of interferometric modulators between unactivated state and the state of activation or between state of activation and unactivated state; Be used for applying to described a plurality of interferometric modulators the member of voltage waveform, the described member that applies is configured to apply lasting described definite time cycle of described voltage waveform; The member of described interferometric modulator is used to throw light on; Be used for sensing from the light of described interferometric modulator reflection and produce member corresponding to the signal of the light of described reception, wherein said definite member receives the described signal from described sensing member, and wherein said definite member is configured to control the described member that applies and applies described voltage waveform repeatedly and continue a plurality of definite time cycles, and reaches the minimum time cycle that threshold value continues based on the number that described signal is discerned the pixel that has activated in described definite time cycle or discharged.

In another embodiment, the method that a kind of manufacturing is used to test the system of a plurality of interferometric modulators comprises: computing machine is provided, described computing machine is configured to determine to apply the time cycle that switching voltage levels continues, and described switching voltage levels is enough to changing described interferometric modulator between release conditions and the state of activation or between state of activation and release conditions; Voltage source is coupled to described computing machine, and described voltage source is configured to apply the voltage waveform that comprises described switching voltage levels and continues the described time cycle; Positioned light source is with the described interferometric modulator that throws light on; With positioning detector to receive from the light of described interferometric modulator reflection, and generation is corresponding to the signal of the described light that receives, wherein said computing machine is configured to receive the signal from described detecting device, and based on described signal, change the time span be used to apply described voltage waveform repeatedly and reach the minimum time cycle that threshold value is continued with the number that is identified in the pixel that has activated during described definite time cycle or discharged, and based on definite one or more response time parameters of the minimum time cycle of described identification.

Description of drawings

Fig. 1 is the isometric view of a part of an embodiment of schematic depiction interferometric modulator display, and wherein the removable reflection horizon of first interferometric modulator is in slack position, and the removable reflection horizon of second interferometric modulator is in active position.

Fig. 2 is the system block diagram that illustrative is incorporated an embodiment of the electronic installation that 3 * 3 interferometric modulator displays are arranged into.

Fig. 3 is the synoptic diagram of relation of removable mirror position and the voltage that applies of an one exemplary embodiment of the interferometric modulator of Fig. 1.

Fig. 4 is the illustrative that can be used for driving one group of row and column voltage of interferometric modulator display.

Fig. 5 A and 5B illustrative can be used for 3 * 3 interferometric modulator displays of Fig. 2 are write an exemplary sequential chart of the row and column signal of a frame video data.

Fig. 6 A and 6B are the system block diagrams of the embodiment of the illustrative visual display unit that comprises a plurality of interferometric modulators.

Fig. 7 A is the schematic cross-sectional of the device of Fig. 1.

Fig. 7 B is the schematic cross-sectional of the alternate embodiment of interferometric modulator.

Fig. 7 C is the schematic cross-sectional of another alternate embodiment of interferometric modulator.

Fig. 7 D is the schematic cross-sectional of the another alternate embodiment of interferometric modulator.

Fig. 7 E is the schematic cross-sectional of the extra alternate embodiment of interferometric modulator.

Fig. 8 is the synoptic diagram of the system of the explanation reflectivity that is used for visually observing the MEMS interferometric modulator.

Fig. 9 is that explanation is used for the synoptic diagram of the system of the reflectivity of definite MEMS interferometric modulator automatically.

Figure 10 is that explanation is used for the synoptic diagram of another embodiment of the system of the reflectivity of definite MEMS interferometric modulator automatically.

Figure 11 is the synoptic diagram of the observation part of explanation MEMS interferometric modulator array.

Figure 12 is the curve map that explanation is used for the modulator reflectivity of the driving voltage of MEMS interferometric modulator and gained.

Figure 13 is the curve map of the optic response of explanation MEMS interferometric modulator.

Figure 14 is that explanation is used to drive the synoptic diagram of MEMS interferometric modulator pixel with another figure waveform of the optic response of definite mass property and gained.

Figure 15 is the process flow diagram that the process of the response time that is used for definite MEMS interferometric modulator is described.

Figure 16 A is used to drive the synoptic diagram of interferometric modulator with the waveform of definite response time with picture specification.

Figure 16 B is the synoptic diagram with the optic response of picture specification interferometric modulator.

Figure 17 A is used to drive the synoptic diagram of interferometric modulator with the waveform of definite response time with picture specification.

Figure 17 B is the synoptic diagram with the optic response of picture specification interferometric modulator.

Figure 18 is the process flow diagram that the process of the minimum response time that is used for definite MEMS interferometric modulator is described.

Embodiment

Below describe in detail at some specific embodiment of the present invention.Yet the present invention can implement by many different modes.Describe in the content referring to accompanying drawing at this, all identical parts are represented with same numeral in the accompanying drawing.

As will be understood from the following description, though described embodiment may be implemented in be configured to show motion (for example, video) still fixing (for example, rest image) no matter and literal or any device of the image of picture in.More particularly, expect that described embodiment may be implemented in the multiple electronic installation or related with multiple electronic installation, described multiple electronic installation is (but being not limited to) mobile phone for example, wireless device, personal digital assistant (PDA), portable or portable computer, gps receiver/omniselector, camera, the MP3 player, video camera, game console, wrist-watch, clock, counter, TV monitor, flat-panel monitor, computer monitor, automotive displays (for example, mileometer display etc.), Cockpit Control Unit and/or display, the display of camera view (for example, the display of rear view camera in the vehicle), the electronics photograph, electronic bill-board or direction board, projector, building structure, packing and the aesthetic structures display of the image of a jewelry (for example, for).Have in the non-display application that MEMS device with the similar structure of describing herein of device also can be used for electronic switching device for example.

The performance of test interferometric modulator is for making problem and identify that defective modulator is useful in the manufacture process early detection of display product before incorporating into interferometric modulator in the display product.In certain embodiments, the operation of test interferometric modulator array is satisfied the response time proper standard that is used for its intended use to guarantee it.Generally, the response time is that interferometric modulator becomes the time span that release conditions (vice versa) are spent in response to the voltage signal that suitably applies from state of activation.

In certain embodiments, by when interferometric modulator being set in activation or release conditions, detecting the operation of testing interferometric modulator array from the light of array reflection.By the threshold value of at first determining catoptrical amount is associated with the number of the interferometric modulator that activates or discharge, can be based on light from the array reflection, how long will spend by the interferometric modulator change state that applies the driving voltage that impels interferometric modulator array to change state and determine predetermined number, determine the response time of interferometric modulator array.The light of reflection is visually detected or detects automatically (for example, by computerized check system) by the operator.(for example, with the video data rate display image data in) the device time, measure to activate and discharge the response time and be even more important when interferometric modulator will be used for need be relatively very fast refresh rate.In the typical case of response time of a plurality of interferometric modulators of test used, the response time that records had been reflected the slow-response of the variable that influences the response time.

A kind of method of measuring the response time is at first offset voltage to be applied to interferometric modulator to be in release conditions to guarantee it, and then applies activation voltage.In another test, at first apply offset voltage to discharge interferometric modulator, then apply bias voltage, and apply activation voltage at last, therefore mode (for example, in lag window) the test response time of operating usually with interferometric modulator.For two kinds of tests, the activation voltage that applies has continued to compare with the response time relative to the long period.Perhaps, can change the interferometric modulator required minimum time amount of the lasting time span of activation (or release) voltage that apply with definite activation the (or release) predetermined number.

Explanation comprises the embodiment of an interferometric modulator display of interfere type MEMS display element among Fig. 1.In these devices, pixel is in bright state or dark state.Under bright (" connection " or " unlatching ") state, display element reflexes to the user with the major part of incident visible light.When in dark (" disconnection " or " closing ") state following time, display element reflexes to the user with few incident visible light.Decide according to embodiment, can put upside down the light reflectance properties of " connection " and " disconnection " state.The MEMS pixel can be configured and mainly reflect at selected color place, thereby allows the colour except white and black displays to show.

Fig. 1 is an isometric view of describing two neighbors in a series of pixels of visual displays, and wherein each pixel comprises the MEMS interferometric modulator.In certain embodiments, interferometric modulator display comprises the delegation/column array of these interferometric modulators.Each interferometric modulator comprises a pair of reflection horizon, and it is positioned to have at least one variable-sized resonant optical mode chamber at a distance of variable and controllable distance with formation each other.In one embodiment, can move one of described reflection horizon between the two positions.In primary importance (being called slack position herein), removable reflection horizon is positioned to apart from the relatively large distance in fixed part reflection horizon.In the second place (being called active position herein), removable reflection horizon is positioned to more closely adjacent described partially reflecting layer.Decide position on removable reflection horizon, interferes longways or mutually mutually from the incident light of described two layers reflection with disappearing, thereby be each pixel generation total reflection state or non-reflective state.

Institute's drawing section branch of pel array comprises two adjacent interferometric modulator 12a and 12b among Fig. 1.In the interferometric modulator 12a of left side, illustrate that removable reflection horizon 14a is in the slack position at the Optical stack 16a preset distance place that comprises partially reflecting layer.In the interferometric modulator 12b of right side, illustrate that removable high reflection layer 14b is in the active position that is adjacent to Optical stack 16b.

Generally include some fused layers (fusedlayer) as Optical stack 16a and 16b (being referred to as Optical stack 16) that this paper quoted, described fused layers can comprise the electrode layer of tin indium oxide (ITO) for example, the partially reflecting layer and the transparent dielectric of for example chromium.Therefore, Optical stack 16 be conduction, partially transparent and partial reflection, and can above-mentioned layer one or more depositing on optical transmission (for example, the transparent) substrate 20 be made by (for example).In certain embodiments, described layer is patterned to become a plurality of parallel bands, and as hereinafter further describing, can form column electrode in display device.Removable reflection horizon 14a, 14b can form the series of parallel band (vertical with column electrode 16a, 16b) of depositing metal layers (one or more layers), and described layer metal deposition is at post 18 and be deposited on the top of the intervention expendable material between the post 18.When expendable material was removed in etching, removable reflection horizon 14a, 14b passed through the gap of being defined 19 and separate with Optical stack 16a, 16b.For example the material of the highly conductive of aluminium and reflection can be used for reflection horizon 14, and these bands can form the row electrode in display device.

Do not applying under the voltage condition, chamber 19 is retained between removable reflection horizon 14a and the Optical stack 16a, and wherein removable reflection horizon 14a is in the mechanical relaxation state, and is illustrated as pixel 12a among Fig. 1.Yet when potential difference (PD) was applied to selected row and column, the capacitor that is formed on the infall of the column electrode at respective pixel place and row electrode became charged, and electrostatic force is pulled in described electrode together.If voltage is enough high, so removable reflection horizon 14 is out of shape and is forced to against Optical stack 16.Dielectric layer (not shown in this figure) in the Optical stack 16 can prevent the separating distance between short circuit and key- course 14 and 16, and is illustrated as the pixel 12b on right side among Fig. 1.No matter the polarity of the potential difference (PD) that is applied how, show all identical.In this way, may command reflective pixel state is similar to employed row in conventional LCD and other display technique/row in many aspects and activates row/row activation of non-reflective pixel state.

The exemplary processes and the system of interferometric modulator array used in Fig. 2 to 5 explanation in display application.

Fig. 2 is the system block diagram that explanation can be incorporated an embodiment of the electronic installation that each side of the present invention is arranged into.In described one exemplary embodiment, described electronic installation comprises processor 21, its can be any general purpose single-chip or multicore sheet microprocessor (for example ARM,

Pro, 8051,

), or any special microprocessor (for example digital signal processor, microcontroller or programmable gate array).As way conventional in this technology, processor 21 can be configured to carry out one or more software modules.Except executive operating system, described processor can be configured to carry out one or more software applications, comprises web browser, telephony application, e-mail program or any other software application.

In one embodiment, processor 21 also is configured to be communicated with array driver 22.In one embodiment, described array driver 22 comprises row driver circuits 24 and the column driver circuit 26 that signal is provided to display array or panel 30.The xsect of in Fig. 2, showing array illustrated in fig. 1 with line 1-1.For the MEMS interferometric modulator, OK/the row activated protocol can utilize the hysteresis property of these devices illustrated in fig. 3.May need the potential difference (PD) of (for example) 10 volts to impel displaceable layers to be deformed into state of activation from relaxed state.Yet, when voltage when described value reduces, displaceable layers is kept its state when voltage drop is returned below 10 volts.In the one exemplary embodiment of Fig. 3, displaceable layers is just lax fully when voltage drops to below 2 volts.Therefore have about 3 to 7V voltage range in example illustrated in fig. 3, have the window of the voltage that applies in described scope, device all is stable in relaxed state or state of activation in described window.This window is referred to herein as " lag windwo " or " stability window ".For the display array of hysteresis characteristic with Fig. 3, can design row/row activated protocol and make and to be expert at during the gating, gating capable in pixel to be activated be exposed to about 10 volts voltage difference, and pixel to be relaxed is exposed to the voltage difference that lies prostrate near zero.After gating, described pixel is exposed to about 5 volts steady state voltage official post and gets it and keep the gating of being expert at and make in its residing any state.In this example, each pixel experiences the potential difference (PD) in " stability window " of 3-7 volt after being written into.This feature makes pixel design illustrated in fig. 1 activate or lax being pre-stored in all is stable under the state identical apply under the voltage conditions.Because each pixel of interferometric modulator (activating or relaxed state no matter be in) is the capacitor that is formed by fixed reflector and mobile reflection horizon in essence, so can keep this steady state (SS) and almost inactivity consumption under the voltage in lag windwo.In essence, if the voltage that is applied is fixed, there is not electric current to flow in the pixel so.

In the typical case uses, can be by confirming that according to required group activation pixel in first row described group of row electrode produces display frame.Then horizontal pulse is applied to row 1 electrode, thereby activates pixel corresponding to the alignment of being confirmed.Then change described group and confirmed that the row electrode is with corresponding to required group activation pixel in second row.Then pulse is applied to row 2 electrodes, thereby activates suitable pixel in the row 2 according to confirmed row electrode.Row 1 pixel is not influenced by row 2 pulses, and maintains in the state that its 1 impulse duration of being expert at is set.Can be in a continuous manner the row of whole series be repeated this process to produce frame.Usually, repeating this process continuously by the speed with a certain requisite number purpose of per second frame to refresh and/or upgrade described frame with new video data.The row and column electrode that is used to drive pel array also is well-known and can uses in conjunction with the present invention with the agreement of the broad variety that produces display frame.

The Figure 4 and 5 explanation is used for forming a possible activated protocol of display frame on 3 * 3 arrays of Fig. 2.One group of possible row of the hysteresis curve that Fig. 4 explanation can be used for making pixel show Fig. 3 and row voltage level.In Fig. 4 embodiment, activate pixel and relate to suitable row are set at-V _Bias, and will suitably go and be set at+△ V, its respectively can corresponding to-5 volts with+5 volts.Relax pixels is to be set at+V by will suitably being listed as _Bias, and will suitably go and be set at identical+△ V, realize thereby on pixel, produce zero volt potential difference (PD).The voltage of being expert at maintains in those row of zero volt, no matter row are in+V _BiasStill-V _Bias, all be stable in the pixel what initial residing state in office.Same as illustrated in fig. 4, will understand, can use the voltage that has with the opposite polarity polarity of above-mentioned voltage, for example, activate pixel and can relate to and being set at+V suitably being listed as _Bias, and will suitably go and be set at-△ V.In this embodiment, discharging pixel is to be set at-V by will suitably being listed as _Bias, and will suitably go and be set at identical-△ V, realize thereby on pixel, produce zero volt potential difference (PD).Same as illustrated in fig. 4, will understand, can use the voltage that has with the opposite polarity polarity of above-mentioned voltage, for example, activate pixel and can relate to and being set at+V suitably being listed as _Bias, and will suitably go and be set at-△ V.In this embodiment, discharging pixel is to be set at-V by will suitably being listed as _Bias, and will suitably go and be set at identical-△ V, realize thereby on pixel, produce zero volt potential difference (PD).

Fig. 5 B is a sequential chart of showing a series of row and column signals of 3 * 3 arrays be applied to Fig. 2, the row and column signal of described series will produce the display layout that illustrates among Fig. 5 A, and the pixel that wherein is activated is non-reflection.Before the frame that illustrates in to Fig. 5 A write, pixel can be in any state, and in this example all the row all be in 0 volt, and all row all be in+5 volts.Under the voltage condition that these applied, all pixels all are stable in its existing activation or relaxed state.

In the frame of Fig. 5 A, pixel (1,1), (1,2), (2,2), (3,2) and (3,3) are activated.In order to realize this purpose, during be expert at 1 " line time (line time) ", row 1 and 2 are set at-5 volts, and row 3 are set at+5 volts.Because all pixels all are retained in the stability window of 3-7 volt, so this does not change the state of any pixel.Then use from 0 and be raised to 5 volts and return zero pulse gate capable 1.This has activated (1,1) and (1, the 2) pixel and (1, the 3) pixel that relaxed.Other pixel is all unaffected in the array.In order optionally to set row 2, row 2 are set at-5 volts, and row 1 and 3 are set at+5 volts.The same strobe that is applied to row 2 then will activate pixel (2,2) and relax pixels (2,1) and (2,3).Equally, other pixel is all unaffected in the array.Set row 3 similarly by row 2 and 3 being set at-5 volts and row 1 are set at+5 volts.Row 3 strobe sets row 3 pixels are as shown in Fig. 5 A.After frame was write, the row current potential was zero, and the row current potential can maintain+5 or-5 volts, and to follow display be stable in the layout of Fig. 5 A.To understand, same program can be used for the array of tens of or hundreds of row and columns.Also will should be appreciated that, the sequential, sequence and the level that are used to carry out the voltage that row and column activates can extensively change in the General Principle of above being summarized, and example above only is exemplary, and any activation voltage method all can be used with system and method described herein.

Fig. 6 A and 6B are the system block diagrams of the embodiment of explanation display device 40.Display device 40 can be (for example) cellular phone or mobile phone.Yet the same components of display device 40 or its be also various types of display device of illustrative examples such as TV and portable electronic device of version a little.

Display device 40 comprises shell 41, display 30, antenna 43, loudspeaker 44, input media 48 and microphone 46.Shell 41 is formed by any one of the well-known multiple manufacturing process of those skilled in the art usually, and described technology comprises injection-molded and vacuum forming.In addition, shell 41 can be made by any one of multiple material, and described material is including (but not limited to) plastics, metal, glass, rubber and pottery, or its combination.In one embodiment, shell 41 comprises part that can be removed (not shown), and described part that can be removed can have different colours with other or contain the not part that can be removed exchange of isolabeling, picture or symbol.

As described in this article, the display 30 of exemplary display device 40 can be and comprises bistable display (bi-stabledisplay) in any one of interior multiple display.In other embodiments, well-known as the those skilled in the art, display 30 comprises the flat-panel monitor of for example aforesaid plasma, EL, OLED, STN LCD or TFT LCD, or the non-tablet display of CRT or other tube arrangements for example.Yet for the purpose of describing present embodiment, as described in this article, display 30 comprises interferometric modulator display.

The assembly of illustrative exemplary display device 40 embodiment among Fig. 6 B.Illustrated exemplary display device 40 comprises shell 41 and can comprise the partially enclosed at least additional assemblies in described shell 41.For instance, in one embodiment, exemplary display device 40 comprises network interface 27, and described network interface 27 comprises the antenna 43 that is coupled to transceiver 47.Transceiver 47 is connected to processor 21, and processor 21 is connected to regulates hardware 52.Regulate hardware 52 and can be configured to conditioning signal (for example, signal being carried out filtering).Regulate hardware 52 and be connected to loudspeaker 45 and microphone 46.Processor 21 also is connected to input media 48 and driver controller 29.Driver controller 29 is coupled to frame buffer 28 and is coupled to array driver 22, described array driver 22 and then be coupled to display array 30.According to particular exemplary display device 40 designing requirement, power supply 50 is provided to all component with power.

Network interface 27 comprises antenna 43 makes exemplary display device 40 to communicate by letter with one or more devices via network with transceiver 47.In one embodiment, network interface 27 also can have some processing power to alleviate the requirement to processor 21.Antenna 43 is that any antenna with received signal is transmitted in known being used to of those skilled in the art.In one embodiment, described antenna transmits according to IEEE 802.11 standards (comprise IEEE 802.11 (a) and (b) or (g)) and receives the RF signal.In another embodiment, described antenna transmits according to the BLUETOOTH standard and receives the RF signal.Under the situation of cellular phone, described antenna is used for the known signal of communicating by letter through design to receive CDMA, GSM, AMPS or other in the wireless phone telephone network.Transceiver 47 pre-service make processor 21 can receive described signal and also further described signal are handled from the signal that antenna 43 receives.Transceiver 47 is also handled the signal that receives from processor 21 and is made and can transmit described signal from exemplary display device 40 via antenna 43.

In an alternate embodiment, transceiver 47 can be replaced by receiver.In another alternate embodiment, network interface 27 can be replaced by the image source that can store or produce the view data that is sent to processor 21.For instance, described image source can be digital video disk (DVD) or contains the hard disk drive of view data, or produces the software module of view data.

Processor 21 is controlled whole operations of exemplary display device 40 substantially.Processor 21 for example receives the data from the compressing image data of network interface 27 or image source, and described data processing is become raw image data or is processed into the form that easily is processed into raw image data.The data that processor 21 then will have been handled send to driver controller 29 or send to frame buffer 28 for storage.Raw data typically refers to the information of the picture characteristics of each position in the recognition image.For instance, these picture characteristics can comprise color, saturation degree and gray level.

In one embodiment, processor 21 comprises the operation with control exemplary display device 40 of microcontroller, CPU or logical block.Regulate hardware 52 and comprise amplifier and wave filter usually, being used to transferring signals to loudspeaker 45, and be used for from microphone 46 received signals.Adjusting hardware 52 can be the discrete component in the exemplary display device 40, maybe can be incorporated in processor 21 or other assembly.

Driver controller 29 is directly obtained the raw image data that is produced by processor 21 from processor 21 or from frame buffer 28, and suitably the described raw image data of reformatting arrives array driver 22 for high-speed transfer.Specifically, driver controller 29 is reformatted as the data stream of the form with similar grating with raw image data, makes it have the chronological order that is suitable in display array 30 enterprising line scannings.Then, driver controller 29 sends to array driver 22 with formatted information.Conduct integrated circuit (IC) independently can be implemented in numerous ways these controllers although driver controller 29 (for example lcd controller) is usually related with system processor 21.It can be used as in the hardware embedded processor 21, in software embedded processor 21, or is completely integrated in the hardware with array driver 22.

Usually, array driver 22 receives formatted information and video data is reformatted as one group of parallel waveform from driver controller 29, and described waveform is applied to hundreds of and thousands of sometimes lead-in wires from the x-y picture element matrix of display with per second speed repeatedly.

In one embodiment, driver controller 29, array driver 22 and display array 30 are applicable to the display of any type described herein.For instance, in one embodiment, driver controller 29 is conventional display controller or bistable display controller (for example, interferometric modulator controller).In another embodiment, array driver 22 is conventional driver or bi-stable display driver (for example, interferometric modulator display).In one embodiment, driver controller 29 is integrated with array driver 22.This embodiment is general in the height integrated system of for example cellular phone, wrist-watch and other small-area display.In another embodiment, display array 30 is typical display array or bi-stable display array (display that for example, comprises interferometric modulator array).

Input media 48 allows the user to control the operation of exemplary display device 40.In one embodiment, input media 48 comprises keypad, button, switch, touch sensitive screen, the pressure-sensitive or thermosensitive film of qwerty keyboard for example or telephone keypad.In one embodiment, microphone 46 is the input medias that are used for exemplary display device 40.When using microphone 46 to enter data into described device, the user can provide voice command so that the operation of control exemplary display device 40.

Power supply 50 can comprise well-known multiple energy storing device in this technology.For instance, in one embodiment, power supply 50 is rechargeable batteries of nickel-cadmium battery or lithium ion battery for example.In another embodiment, power supply 50 is regenerative resource, capacitor or solar cell, comprises plastic solar cell and solar cell coating.In another embodiment, power supply 50 is configured to from the wall socket received power.

In certain embodiments, as mentioned described in, control programmability reside in the driver controller, it can be arranged in some positions of electronic display system.In some cases, the control programmability resides in the array driver 22.Be understood by those skilled in the art that above-mentioned optimization may be implemented in the hardware of any number and/or the component software and can various configurations implement.

Details according to the structure of the interferometric modulator operated of principle of above statement can extensively change.For instance, Fig. 7 A-7E illustrates five different embodiment of removable reflection horizon 14 and supporting construction thereof.Fig. 7 A is the xsect of the embodiment of Fig. 1, and wherein strip of metal material 14 is deposited on the vertically extending support member 18.In Fig. 7 B, removable reflection horizon 14 only is attached to support member at the corner place on tethers (tether) 32.In Fig. 7 C, removable reflection horizon 14 is folded down from the deformable layer 34 that can comprise the flexible metal.Described deformable layer 34 is connected to directly or indirectly around the substrate 20 of the periphery of deformable layer 34.These connections are referred to herein as pillar.The embodiment that illustrates among Fig. 7 D has post plugs 42, and deformable layer 34 rests on the described post plugs 42.Shown in Fig. 7 A-7C, removable reflection horizon 14 keeps being suspended in the top, chamber, but deformable layer 34 does not form described pillar by the hole of filling between deformable layer 34 and the Optical stack 16.Exactly, pillar is formed by the smoothing material that is used to form post plugs 42.The embodiment that illustrates among Fig. 7 E is based on the embodiment that shows among Fig. 7 D, but also can be suitable for the embodiment that in Fig. 7 A-7C, illustrates and not shown extra embodiment any one play a role.In the embodiment shown in Fig. 7 E, used the additional layer of metal or other conductive material to form bus structure 44.This allows signal to carry out route along the back side of interferometric modulator, thereby eliminates the possible electrode that must be formed on the substrate 20 of many scripts.

In the embodiment of for example embodiment of those shown in Fig. 7, interferometric modulator serves as the direct viewing device, wherein watches image from the front side of optical transmission substrate 20, described side with above to be furnished with a side of modulator relative.In these embodiments, reflection horizon 14 is covered the several portions of interferometric modulator in the described side relative with substrate 20 in reflection horizon with optical mode, and it comprises deformable layer 34 and bus structure 44.This permission is configured and operates shaded areas and can negatively not influence picture quality.This separable modulator structure allows to select to be used for the structural design of the dynamo-electric aspect of modulator and optics aspect and material and makes it independently of one another and play a role.In addition, the embodiment shown in Fig. 7 C-7E has the additional benefit that the optical property that is derived from reflection horizon 14 and its engineering properties break away from, and described benefit is carried out by deformable layer 34.This structural design and material that allows to be used for reflection horizon 14 is optimized aspect optical property, and is used for the structural design of deformable layer 34 and material is being optimized aspect the engineering properties of expectation.

The making of MEMS interferometric modulator can be used conventional semiconductor fabrication, for example photoetching process, deposition are (for example, as " dry type " method of chemical vapor deposition (CVD) with as the wet method of spin coating), mask and etching dry method and the wet method of plasma etching (for example, as) etc.The performance of test MEMS interferometric modulator is for making problem and identify that defective modulator is useful in the manufacture process early detection of display product before incorporating into the MEMS interferometric modulator in the display product.

In certain embodiments, by activating or detect during release conditions the operation of testing interferometric modulator array from the light of array reflection in the prior defined procedure (for example, this paper further describe those processes) interferometric modulator being set in.Can finish this test to determine the quality check of expectation, comprise the homogeneity of hot-wire array in release or state of activation, or determine to activate and/or discharge the response time.Decide visually (for example, by the operator) or the light of (for example, by computerized check system) detection of reflected automatically on method of testing.For instance, Fig. 8 explanation is by visually checking when array is driven into various known state from being subjected to the light of illumination array reflection, checks the embodiment of array with the system that carries out defects detection.The MEMS interferometric modulator array is placed on the probe socket (probe mount) 102.Probe socket 102 is situated between with switch enclosure 104 and/or control computer 106 and connects to use drive scheme described below to come the driving condition of array of controls.In certain embodiments, diffuser plate 108 can be placed on the array, make beholder 110 observe the non-specular surface display.Can provide continuous spectrum light source 112 to assist to catoptrical visual observation.In certain embodiments, observer 110 can watch a plurality of displays to increase treatment capacity simultaneously.System that is used for hot-wire array and process that this paper discloses also can be used for testing the single or multiple interferometric modulators that are not configured in array.

In certain embodiments, test process can carry out automatically.Therefore, for instance, can the presumptive area place on interferometric modulator array automatically perform detection as the reflectivity of the function of the voltage drive that is applied.Can use the appropriate algorithm of carrying out on calculation element to automatically perform CALCULATION OF PARAMETERS and quality control determines.In addition, the location of interferometric modulator array in testing apparatus can be carried out automatically, makes to realize the format high throughput of the interferometric modulator display of manufacturing in enormous quantities.In certain embodiments, test the selected number percent sample of the display of manufacturing in enormous quantities for the quality control purpose.

An embodiment of the equipment of the reflectivity of describing among Fig. 9 to be suitable for to use automatic checkout system to measure interferometric modulator array.The array 120 that comprises the interferometric modulator of a plurality of interferometric modulators that for example are similar to Fig. 1 explanation is electrically connected to driven source 122.Time variant voltage excitation when driven source 122 applies to array 120, for example square voltage waveform.Voltage signal can be applied to simultaneously all interferometric modulators in the array 120.Perhaps, voltage signal only can be applied to the interferometric modulator that those are just measuring its reflectivity.Light source 124 illumination arrays 120.In one embodiment, standard D65 light source is as light source 124.Light source 124 provides light 126 to interferometric modulator array 120, and light 126 is then upwards reflected.

Photodetector 128 can be used for detecting the intensity from the reflected light 130 of interferometric modulator array 120.Optionally diffusion barrier 132 can be placed on the interferometric modulator array 120.Diffusion barrier 132 scatterings are from the light 130 of interferometric modulator array 120 reflections.This scattering allows light source 124 and detecting device 128 to place with angle 134 and 136 with respect to array 120.Although may be maximum when angle 134 and 136 complementations, use diffusion barrier 132 permissions to detect with the angle that is different from maximum direct reflection angle from the incident light of array 120 reflections.If do not use diffusion barrier 132, so maybe advantageously incident light 126 is with near being incident on the array 120 perpendicular to the angle of array 120 and from array 120 reflected backs.This configuration is desirable, because interferometric modulator may have narrower visual angle, thereby causes catoptrical intensity to descend rapidly when angle broadens.

The computing machine 138 of communicating by letter with detecting device 128 can be used for writing down the relation (for example, hysteresis curve) of reflectivity and voltage characteristic and calculates electrical quantity.Computing machine 138 can be connected to driven source 122 to provide to interferometric modulator about driving voltage being applied to the response time information of the time of array 120.(during for example, interferometric modulator array the typical case of) response time used, the response time that records had been reflected the slow-response of the variable that influences the response time at a plurality of interferometric modulators of test.

Because the MEMS interferometric modulator display has reflectivity in essence and is in the nature minute surface, so maybe advantageously, detect all size perpendicular to the reflectivity of the incident light of substrate surface (for example, online illumination) and catoptrical array.In one embodiment, use the system of Figure 10 explanation to be implemented in the linear light photograph.In this system, beam splitter 150 is provided, it will reflex on the evaluated array 120 from the light of light source 152.By the path of the light 126 of beam splitter 150 reflection perpendicular to array 120.When light source 152 illumination arrays 120, driven source 122 is encouraged the time time variant voltage of expecting and is applied to array 120.

Detection module 128 reflects and passes through the light 130 of beam splitter 150 from array 120 with detection through the location.In this way, incident light 126 and reflected light 130 both all perpendicular to array 120.In certain embodiments, system can comprise micro objective 154 in addition, and it is used to assess the only sub-fraction in whole effective surface zone.Array 120 can be placed in the probe socket 156, probe socket 156 then can be fastened to the X-Y platform 158 that is used for mobile array 120, makes the part of expectation of effective coverage below the micro objective 154 that is used to assess.Detection module 128 can comprise one or more detecting devices (for example, photodetector or spectrometer) and CCD camera 160.

One or more beam splitters 162 can be made by an above detecting device and be used for measuring simultaneously.Can select light source 152 so that the spectrum with expectation and the light of strength characteristics to be provided.For instance, may be desirable be to make the approximate characteristic that will be used to watch the light source of the display that array 120 expectations are incorporated into usually of light source 152.In one embodiment, use standard D65 light source.In certain embodiments, light source 152 can be coupled to illumination control apparatus 164 (be preferably Koehler design).The zone of the aperture of scalable illumination control apparatus 164 to be paid close attention on the illumination array 120 only.

The computing machine 138 of communicating by letter with detecting device 128 can be used for writing down the relation (for example, hysteresis curve) of reflectivity and voltage characteristic and calculates the parameter of the response time that comprises interferometric modulator.Computing machine 138 can be connected to driven source 122 to provide to interferometric modulator about driving voltage being applied to the response time information of the time of array 120.In certain embodiments, computing machine 138 also is used in the test period controlling and driving voltage source 122 of interferometric modulator.

Other embodiment of system can be used for being implemented in the linear light photograph and detects.For instance, in certain embodiments, a branch of optical fiber (some of them optical fiber provides incident light and other optical fiber detection of reflected light) can be aimed on the desired region of array 120.Described intrafascicular one or one or more optical fiber can be connected to light source, and described intrafascicular one or one or more other optical fiber are connected to detecting device.In one embodiment, described many intrafascicular external fibers are connected to light source, and described intrafascicular one or one or more internal optical fiber are connected to one or more detecting devices (for example, spectrometer and/or photodetector).In certain embodiments, the end of fibre bundle makes beam splitter (for example, the beam splitter among Figure 10 150) guiding incident and reflected light perpendicular to array 120 through the location.This configuration allows to use simultaneously the extra detecting device (for example, the CCD camera 160) in the detection module 128.Perhaps, fibre bundle can make described end perpendicular to array 120 through the location.

Figure 11 describes to contain the interferometric modulator array 120 of a plurality of interferometric modulator element 202.Discuss as mentioned, when microscope lens 154 is used in the voltage waveform that uses expectation and drives array, reflectivity is detected a part that focuses on interferometric modulator array 120, as referring to Figure 12-19 discussion.For instance, zone 204 can be the detected zone of test period.Tested zone 204 can have the size of any appropriate.In one embodiment, only comprise minority interferometric modulator element 202.In one embodiment, measure the spot of about 1mm diameter.In certain embodiments, a plurality of zones of continuous coverage on an array 120, for example zone 204,206,208,210 and 212.Can select the number in zone and the position in zone based on the testing standard of expectation.For instance, can use the suggestion number and the position thereof of the spot measurement of recommending by ANSI or VESA that is used for display apparatus test.In one embodiment, single regional 204 of the center of the close array 120 of measurement.

For example the optical system of above describing referring to Fig. 8-11 can be used for showing one or more pixels of array when driving array for activation and/or release or the electrical-optical characteristic in zone.In one embodiment, measure the homogeneity that becomes clear when interferometric modulator is driven by stored waveform with dark state.Can be by becoming set drive (gang drive) to drive whole array, make to drive together all interferometric modulators (for example, all row are by short circuit and ground connection, and all row are by short circuit and driving).The system with detecting device 128 and anacom 138 that can use (for example) Figure 10 to describe checks the zone of interferometric modulator array.In certain embodiments, the beholder can evaluate the homogeneity of bright and dark state by visually observing ccd image.Perhaps, the algorithm that can use a computer carries out the analysis of ccd image automatically.

In certain embodiments, by making micro objective 230 focus on single pixel or one group of pixel and being adjusted in linear light, test and/or measure one or more storage characteristicss in pixel or zone according to described pixel or the group of throwing light on.In other embodiments, test one or more storage characteristicss in the big zone of whole array or array.In certain test, may desirablely be, by (for example) all line leads are connected to ground and all row lead-in wires are connected to same voltage waveform and come " in groups " to drive array, make whole group pixel or array can represent uniform reflection characteristic.Figure 12 illustration drives the activation and the release characteristics of an embodiment of the interferometric modulator of array in groups.By driving array storage characteristics is described herein, with voltage waveform 228.Because the required voltage difference of the modulator in the activation array is higher than modulator is maintained the required voltage of its current state (it is higher than the required voltage of modulator that discharges in the array again), so lag behind.Therefore, have a voltage window, though in described voltage window when voltage changes array can not change state yet.Figure 12 illustrates the function of the reflectivity 230 of driving voltage 228 and (for example, by photo-detector measurement to) array as the time.Perhaps, response can be depicted as the hysteresis curve figure as Figure 13, Figure 13 describes the function of reflectivity as driving voltage.The response that does not represent the expectation lag shape among Figure 13 will be indicated unusual in the pixel of array or the zone.

In certain embodiments, the feature of the response of interferometric modulator can be four voltage levels: just activate (+Vact), just discharge (+Vrel), the negative activation (Vact) and negative release voltage (Vrel).These voltage levels itself are arbitrarily, because actual positive activation voltage, positive release voltage, negative activation voltage and negative release voltage will change according to the structure of particular interferometric modulator.Can determine these voltage levels from the curve map of Figure 12 or 13.+ Vact 220 will be by residing voltage when release conditions are driven into state of activation corresponding to MEMS interferometric modulator when voltage increases.+ Vrel 222 corresponding to MEMS interferometric modulator when voltage reduces will be when state of activation discharges residing voltage.-Vact 224 will be by residing voltage when release conditions are driven into state of activation corresponding to MEMS interferometric modulator when voltage reduces.-Vrel 226 corresponding to MEMS interferometric modulator when voltage increases will be when state of activation discharges residing voltage.

Can use these four voltage levels to be identified for setting the suitable parameter of the stored waveform of some test process.These parameters comprise amplitude (Vbias), DC offset voltage (Voffset), the memory window (Δ Vmem) of bias voltage and activate the required pulse (Vact) of pixel.In certain embodiments, can followingly determine these parameters:

V _bias＝[((+Vact++Vrel)/2-((-Vact+-Vrel)/2)]/2

V _offset＝[((+Vact++Vrel)/2)+((-Vact+-Vrel)/2)]/2

Vmem＝Min[(+Vact-+Vrel)，(-(-Vact--Vrel)]

Vact＝2X+V _bias

Referring to Figure 13, V _BiasVoltage during substantially corresponding to the symcenter of the misalignment hysteresis curve of memory window.V _OffsetVoltage when departing from 0V corresponding to symcenter substantially, for example, usually it is calculated as positive activation voltage (+Vact) with negative activation voltage (mean value Vact).The voltage window that Δ Vmem will can not change therein corresponding to the state of interferometric modulator.Activation voltage is corresponding to the current potential of the activation that will guarantee interferometric modulator.These parameters can be used for definite suitable control voltage at the array in the research, or are used for determining whether array will be applicable to the application of expectation.For instance, in display application, the memory window (Δ Vmem) that is lower than 0.5V can indicate array not by testing and can not using.

In one embodiment, can be by confirming the driving voltage step on the interferometric modulator and using the photo-detector measurement reflex response, measure the pixel of MEMS interferometric modulator array or the response time in zone (for example a, part) (both all are called " interferometric modulator " with it) herein.Figure 14 explanation comprises an example of the voltage waveform of this voltage step.In Figure 14, curve 300 is the diagrammatic representations as the function of time of explanation driving voltage waveform.Herein, the voltage waveform of affirmation comprises voltage step 304, and it is near the voltage step of first voltage level 301 the offset voltage (Voff) when interferometric modulator is in release conditions to second voltage level 302 that is in normal shock work voltage (Vact).In case confirm this voltage step, interferometric modulator just changes its reflectivity properties from bright state (release) to dark state (activation).If during the applying of this voltage step, detect from the light of interferometric modulator reflection, realize the time of certain reflectance varies by measuring interferometric modulator so with cost, determine the response time of just activating (Tpa).Allow to align to the voltage step 308 of release voltage level 306 and discharge the response time (Tpr) and carry out similar detection from just activating voltage level 302.Similarly, by being in negative activation voltage (when voltage step Vact) activates interferometric modulator in usefulness, and then detection of reflected light when affirmation makes the voltage level 316 of interferometric modulator release can be determined negative activation (Tna) 314 and bear release (Tnr) 316 response times.Term " offset voltage " can be used for describing positive activation voltage (+Vact) with negative activation voltage (mean value Vact), illustrated as Figure 12.In the typical case of test response time used, the response time that records had been reflected the slow-response of tested interferometric modulator.

In the lower curve 310 of Figure 14, describe the example of the reflectivity of generation when interferometric modulator is activated or discharge.The reflectance varies of interferometric modulator is shown as the function of time herein.The size of the relative variation of reflectivity can be used for illustrating from bright (release) state to reflectance varies of dark (activation) state and the variation from the dark state to the bright state.In one embodiment, will be defined as the response time when being triggered by the voltage level change that is used to activate or discharge interferometric modulator, the reflex response 312 of interferometric modulator reaches the time that certain level spent of total reflex response.In one embodiment, the reflex response 312 that will be defined as interferometric modulator the response time reaches 90% time that is spent of total reflex response.In other embodiments, can use less than 90% or greater than other reflectivity percentages (or level) of 90%.In certain embodiments, the duplicate measurements response time is to determine its consistance.The standard of acceptable response time may be according to application and difference.For instance, for not needing in shown picture in the fast-changing display application, the long response time is acceptable.

Be understood by those skilled in the art that there are many alternate embodiments in the voltage waveform that Figure 14 describes.Decide on display application, the preferred embodiment that can change the response time waveform is with the drive signal of the expectation of imitating final display.The waveform of Figure 14 explanation is an example that can be used for the waveform of definite response time.In certain embodiments, only use the part of waveform, for example, the first of indication can be used for test and is just activating and discharge the response time (with respect to offset voltage for just) between the label 301 and 306.In some test, this part of waveform repeatedly can be applied to interferometric modulator.In these cases, can define the cycle (for example, between label 303 and 306) of this part of waveform, and also can define the frequency that applies described waveform portion.Can define similar cycle and frequency at the part of all waveforms described herein and/or waveform.For instance, can define another periodic waveform between label 303 and 316, it comprises and just activates and discharge and negative activate and discharge.In some applications, decide on the measured response time, waveform or its part are applied to interferometric modulator with the frequency of about 10Hz-5000Hz.

Figure 15 is the process flow diagram of process 330 that is used for determining one or more response time parameters of interferometric modulator.In state 332, voltage waveform is applied to array so that the state of pixel is changed into release conditions from state of activation, or changes into state of activation from release conditions.In order to measure the response time, should confirm that the voltage waveform long enough is to allow to carry out the activation or the release of all interferometric modulators, that is to say, confirm that the time span of voltage should be longer than the response time, make that time span is not the limiting factor that the response time is measured.In state 334,, use detecting device to measure the reflectivity of array with respect to the time that applies voltage waveform.Then, in state 336, process 330 is determined one or more response time parameters of pixel based on the detected reflectivity of (for example) Figure 14 or Figure 16 A and 16B explanation.Measure for some response time, activation voltage is applied to interferometric modulator and does not consider that when it without undergoing bias voltage (for example, Figure 14).Carry out other response time measurement by activation voltage being applied to the interferometric modulator that at first stands bias voltage (for example, Figure 16 A and 16B).

Figure 16 A is the diagrammatic representation of voltage waveform 380 as the function of time, and described voltage waveform 380 can be used for driving one or more MEMS interferometric modulators to determine the response time.Figure 16 B is the diagrammatic representation as the function of time of the reflectivity 382 that records accordingly, the interferometric modulator that the voltage waveform 380 shown in described reflectivity 382 free Figure 16 A drives.It is the center that voltage waveform 380 is shown as with the offset voltage, and described offset voltage can be set in different voltage levels in the various embodiment of MEMS interferometric modulator and/or drive scheme.Therefore, positive and negative bias voltage and positive and negative activation voltage are discussed with respect to offset voltage, and do not mean that described voltage and must be plus or minus with respect to the ground voltage that is zero.

In this embodiment, determine to stand the voltage level in the lag windwo interferometric modulator activation and discharge the response time (positive and negative).At times 350 place, voltage waveform be in positive bias in the lag windwo of interferometric modulator (+Vbias), label herein is about relating to along the time of the time point of x axle (time) indication.At times 352 place, voltage waveform 380 is set at variation, and then be increased to positive bias (+Vbias).Voltage is set in offset voltage have been guaranteed to be in release conditions in times 354 place's pixel.At times 356 place, voltage from the biasing positive bias (+Vbias) be increased to positive activation voltage (+Vact) and at this maintenance duration Δ t (Δ t), the described duration extends to the time 358.When applying activation voltage, pixel correspondingly activated in the discrete time cycle, thereby impelled the reflectivity of pixel to change into dark state from bright state.Activation voltage and bias voltage can change according to the configuration of interferometric modulator.In an example, positive activation voltage is the twice of positive bias level approximately, and negative activation voltage is the twice of negative bias level approximately.

The variation of the reflectivity 382 of Figure 16 B explanation interferometric modulator is as the function of time, and the time shaft of Figure 16 A is corresponding to the time shaft of Figure 16 B.Illustrated as Figure 16 B, when interferometric modulator when the times 356, the place activated, reflectance varies, and the time that reflectance varies continues is for just activating the response time (Tpa).Can measure (comprising one of previously described system of this paper) reflectivity of pixel by using multiple systems.

In various embodiments, when reflectivity is reduced to some threshold value (for example, total reflex response 90%, 95% or 99%), response can be considered as complete.The various displays that different threshold values may be incorporated into applicable to pixel.Can based on one or more operating conditionss or application requirements be scheduled to or dynamically determine described threshold value.The time cycle Δ t that confirms activation voltage therebetween and continued compared with the response time of just measuring to have the relatively large duration, all will activate with arbitrary pixel of guaranteeing to activate.

At times 360 place, voltage is reduced to offset voltage, described offset voltage is the release voltage of pixel.When this situation took place, pixel discharged, and the reflectivity of pixel increases.Illustrated as Figure 16 B, this cycle time that interferometric modulator release is continued is for just discharging the response time (Tpr).Be similar to and just activate the response time, can be by measuring in case when the times 360, the place was set at offset voltage with voltage the reflectivity of pixel reach the time cycle that a certain threshold value spends and determine just discharging the response time.

At times 364 place, voltage waveform 380 is set at negative bias (Vbias).Then, voltage waveform 380 is set at negative activation voltage (Vact) to activate interferometric modulator at times 366 place.When voltage the times 366 place from-Vbias change into-during Vact, pixel is activated, and makes it become darker, and can determine the negative activation response time (Tna) based on the reflectivity of measuring pixel.When voltage the times 370 place from-when Vbias changed into offset voltage, pixel was released, and its reflectivity increases when it becomes bright state.Be similar to other response time measurement described herein, can reach a certain threshold value based on the reflectance varies of measuring interferometric modulator and spend how long come to determine the negative response time (Tnr) that discharges.Figure 16 B also illustrates negative activationary time (Tna) and negative release time (Tna), its correspond respectively to times 366 place negative activation and the times 370 place negative release.The response time of Que Dinging is based on the interferometric modulator with hysteretic operation herein, and for example, the response time is based on voltage ((for example ,+Vact) for example ,+Vbias) is changed into the outer voltage of lag windwo from the voltage in the lag windwo.Activate and the release interferometric modulator test pixel under the operating conditions of the practical operation condition that may closer imitate pixel during by the voltage level in interferometric modulator stands lag windwo.

Now referring to Figure 17 A and 17B, in another embodiment, the time span Δ t that applies activation voltage (plus or minus) by change monitors that simultaneously pixel is to determine when it and be activated or to discharge the activation of calculating the MEMS interferometric modulator and discharge the response time.Change time cycle Δ t, till definite minimum time value, the pixel that can accept number (or number percent) during described minimum time value can activate (or release) at described minimum time in the cycle.This paper is called this process " minimum time line process ".

Figure 17 A explanation is similar to the voltage waveform 480 of the voltage waveform 380 shown in Figure 16 A substantially.Yet, voltage waveform 480 or its part (for example, plus or minus activation voltage part) repeatedly are applied to interferometric modulator, and all determine the response time at every turn, as described previously based on the light that detects from the interferometric modulator reflection.Can change and apply the time span that activation voltage continues, being identified for applying the minimum time that still allows the activation voltage that interferometer activates, as among Figure 17 B by Δ t ₁With Δ t ₃Illustrated.

Similarly, can change and apply the time span that release voltage continues, being identified for applying the minimum time that still allows the release voltage that interferometer discharges, as among Figure 17 B by Δ t ₂With Δ t ₄Illustrated.These minimum time (Δ t ₁, Δ t ₂, Δ t ₃With Δ t ₄) long enough makes modulator can suitably respond the voltage that is applied.If time Δ t ₁Too short, reflectance curve 482 will look as first dotted line 483 so, because modulator can not respond positive activation voltage.A program is to increase to apply the time Δ t that activation voltage continues ₁, till (for example) watches the observer of activation or measuring system to observe activation.Similarly, if time Δ t ₃Too short, reflectance curve 482 will look as the 3rd dotted line 485 so, because modulator does not respond negative activation voltage, and if time Δ t ₂Or Δ t ₄Too short, reflectance curve 482 will look as the second and the 4th dotted line 484,485 so, because modulator will not respond the indivedual plus or minus release voltages that applied.These times (Δ t ₂, Δ t ₃With Δ t ₄) also can increase, till the response of observing expectation.

Figure 17 B explanation uses the minimum time line process to determine a kind of method of all response times by the curve of analyzing reflectivity and time relation.Can pass through variety of way, comprise, detect the activation and/or the release of pixel by using one of system described herein (or another appropriate system) to detect the reflectivity of pixel.Activation or release that the interferometric modulator of slow-response is indicated in that perceive or the activation that records or release.Measurement of reflectivity to be determining whether satisfying some reflectivity threshold value, thereby indicates a certain pixel of accepting number percent just to activate or discharge.In certain embodiments, the definite acceptable threshold value of the number percent of the pixel of activation and/or release is 90% or higher, and in other embodiments, described number percent can be lower than 90% (for example, 80%).

When pixel will be used for the very fast refresh rate of needs (for example, with the video data rate display image data in) the device time, advantageously use the minimum time line process to determine the pixel response time because its allow to carry out can standardized observational measurement.Using standardized value also to can be it implements to facilitate with each manufacturer.

Figure 18 is the process flow diagram of the process 400 of a plurality of interferometric modulator pixels of test.In state 402, process 400 is set and is applied the time cycle that the activation voltage level is continued, and described activation voltage level is enough to changing interferometric modulator between unactivated state and the state of activation or between state of activation and the unactivated state.In state 404, the voltage waveform that will comprise the activation voltage of the duration that continues the described time cycle puts on pixel.In state 406, detect the reflectivity of pixel and use described reflectivity to determine that the pixel of enough numbers is activated or discharges.In state 408, determine the response time parameter of pixel based on detected reflected light.

In the minimum time cycle that then process repeats described setting, applies in state 410, detection and determining step are activated or discharge with the pixel of discerning enough numbers, wherein be based on one or more response time parameters of determining and carry out for the described follow-up setting of time cycle.

Describe as mentioned, the visual observation of the reflectivity of interferometric modulator or measurement can be used for determining mass parameter.For instance, in certain test, the homogeneity of interferometric modulator when assessment all is driven to activation or release conditions when interferometric modulator, or in other test, determine the activation of interferometric modulator or discharge the response time.In another embodiment, can determine mass parameter by the color response of using interferometric modulator, for example by using contrast to change to determine interferometric modulator when to activate or discharging, activate or discharge homogeneity or activation or release response time with respect to the time.Can from reflected light 130, detect and use the system that is similar to Figure 10 to measure (wherein detecting device 128 comprises spectrometer) color response of interferometric modulator array 120.Scalable system for example mentioned above is to focus on the single pixel or the zone of array 120.When single pixel being tested when determining not comprise in the test zone hole in the array, post and any mask, this may be favourable.In one embodiment, array is connected to for example above-described one-tenth set drive.

Then can under multiple excitation waveform, carry out color measuring.In one embodiment, in driving condition not and under driving stored waveform for example mentioned above, measure interferometric modulator.Can drive becoming clear and dark state under the stored waveform according to spectral measurement.The colouring information of collecting from reflected light 130 can be converted to color parameter, for example X, Y, Z CIE color tristimulus value(s).Because the Y in X, Y, the Z CIE color tristimulus value(s) contains all monochrome informations, so the ratio of Y bright (for example, un-activation) and Y dark (for example, activating) provides the contrast-ratio of contrast performance, be similar to reflectivity, described contrast-ratio can be used for determining inhomogeneity size.In certain embodiments, carry out one or more color measurings in the described color measuring separately.In certain embodiments, by with the light source illuminating interferometric modulator of different colours and measure the light that each source is reflected, carry out this measurement.In other embodiments, reflected light by predetermined filter to select expectation wavelength to be measured.

Although the novel feature of the present invention that is applied to each embodiment has been showed, described and pointed out to above detailed description, but will understand, the those skilled in the art can make the various omissions on form and the details, alternative and variation to illustrated device or process under the situation that does not break away from spirit of the present invention.To recognize that the present invention can be included in the form that feature that this paper states and all features in the benefit and benefit are not provided, because some features may be separated with further feature and are used or put into practice.

Claims (86)

1. One kind the test a plurality of interferometric modulators method, described method comprises:

   Apply voltage waveform to described interferometric modulator, between activation and release conditions or between release conditions and state of activation, to change the state of described interferometric modulator;

   When applying described voltage waveform, detect from the light of described interferometric modulator reflection function as the time; With one or more response time parameters of determining described interferometric modulator based on described detection.
2. 2. method according to claim 1, the wherein said step that applies comprises with the frequency between 10Hz and the 5000Hz and applies described voltage waveform.
3. 3. method according to claim 2, the wherein said step that applies comprises with the frequency between 50Hz and the 500Hz and applies described voltage waveform.
4. 4. method according to claim 3, the wherein said step that applies comprises with the frequency between 50Hz and the 150Hz and applies described voltage waveform.
5. 5. method according to claim 4, the wherein said step that applies comprises that the frequency with about 100Hz applies described voltage waveform.
6. 6. method according to claim 1 wherein puts on all interferometric modulators simultaneously with described waveform.
7. 7. method according to claim 1, wherein said detection step comprise that detection is from being less than the light of whole interferometric modulator reflections.
8. 8. method according to claim 1, wherein said detection step comprise with the described reflected light of photo-detector measurement.
9. 9. method according to claim 1, wherein said detection step comprise by the fan diffuser that is positioned at described interferometric modulator the place ahead measures described reflected light.
10. 10. method according to claim 1, wherein said detection step comprise with substantially perpendicular to the described reflected light of the measurement of angle of described interferometric modulator.
11. 11. method according to claim 1, wherein said voltage waveform comprise the first that is in offset voltage level approximately and are in the second portion of activation voltage level.
12. 12. method according to claim 1, the amplitude of wherein said waveform is less than impelling described interferometric modulator to activate about twice of necessary voltage.
13. 13. method according to claim 12, the amplitude of wherein said waveform are to impel described interferometric modulator to activate about 1.25 times of necessary voltage.
14. 14. method according to claim 1, wherein said voltage waveform comprise that the first's peace treaty that is in the activation voltage level is in the second portion of offset voltage level.
15. 15. method according to claim 1, wherein said determining step comprise the response time of the just activation response time (Tpa) of determining described interferometric modulator.
16. 16. method according to claim 1, wherein said determining step comprise the response time of negative activation response time (Tna) of determining described interferometric modulator.
17. 17. method according to claim 1, wherein said determining step comprise the response time of the just release response time (Tpr) of determining described interferometric modulator.
18. 18. method according to claim 1, wherein said determining step comprise the response time of negative release response time (Tnr) of determining described interferometric modulator.
19. 19. method according to claim 1, wherein said response time parameter is based on the one or more slow-response time in described a plurality of interferometric modulators.
20. 20. a system that is used to test a plurality of interferometric modulators, it comprises:

    Light source, it is suitable for providing incident light to a plurality of interferometric modulators;

    Voltage source, it is configured to apply voltage waveform to described interferometric modulator, thereby changes described interferometric modulator between activation and release conditions or between release conditions and state of activation;

    Fluorescence detector, it is configured to detect from the light of described a plurality of interferometric modulators reflections and produces signal corresponding to described detected light; With

    Computing machine, it is configured to receive the signal from described fluorescence detector, and determines one or more response time parameters of described interferometric modulator based on described signal.
21. 21. system according to claim 20, thereby wherein said voltage source further is configured with the frequency between 10Hz and the 5000Hz and applies described voltage waveform.
22. 22. system according to claim 21, thereby wherein said voltage source further is configured with the frequency between 50Hz and the 500Hz and applies described voltage waveform.
23. 23. system according to claim 20, thereby wherein said voltage source further is configured with the frequency between 50Hz and the 150Hz and applies described voltage waveform.
24. 24. system according to claim 20, wherein said waveform puts on all interferometric modulators simultaneously.
25. 25. system according to claim 20, wherein said fluorescence detector further is configured to measure described reflected light by the fan diffuser that is positioned at described interferometric modulator the place ahead and detects described reflected light.
26. 26. system according to claim 20, wherein said fluorescence detector further is configured to by to detect described reflected light perpendicular to the described reflected light of the measurement of angle of described interferometric modulator substantially.
27. 27. system according to claim 20, wherein said computer installation receives the signal when instructed voltage puts on described interferometric modulator from described voltage source.
28. 28. system according to claim 20, the just activation response time (Tpa) that wherein said definite response time parameter is described interferometric modulator.
29. 29. system according to claim 20, wherein said definite response time parameter are the negative activation response times (Tna) of described interferometric modulator.
30. 30. system according to claim 20, the just release response time (Tpr) that wherein said definite response time parameter is described interferometric modulator.
31. 31. system according to claim 20, wherein said definite response time parameter are the negative release response times (Tnr) of described interferometric modulator.
32. 32. system according to claim 20, wherein said one or more response time parameters are based on the one or more slow-response time in described a plurality of interferometric modulators.
33. 33. a system that is used to test a plurality of interferometric modulators, it comprises:

    Be used for providing the member of light to described a plurality of interferometric modulators;

    Be used for applying voltage waveform between activation and release conditions or between release conditions and state of activation, to change the member of described interferometric modulator to described interferometric modulator;

    Be used to detect member from the light of described a plurality of interferometric modulator reflections;

    Be used to produce member corresponding to the signal of described detected light; With

    Be used for determining the member of one or more response time parameters of described interferometric modulator based on described signal.
34. 34. system according to claim 33, wherein said light provides member to comprise broadband light source.
35. 35. system according to claim 33, wherein said voltage applies member and comprises voltage source.
36. 36. system according to claim 33, wherein said detection means comprises fluorescence detector.
37. 37. system according to claim 33, wherein said detection means comprises spectrometer.
38. 38. system according to claim 33, wherein said signal produces member and comprises fluorescence detector.
39. 39. according to claim 33,34,35,36,37 or 38 described systems, wherein said definite member comprises the computing machine that is configured to receive from the signal of described detection means.
40. 40. system according to claim 33, wherein said one or more response time parameters are based on the one or more slow-response time in described a plurality of interferometric modulators.
41. 41. a manufacturing is used to test the method for the system of a plurality of interferometric modulators, described method comprises:

    Settle light source, described light source is suitable for providing incident light to a plurality of interferometric modulators;

    Settle voltage source, described voltage source is suitable for applying voltage waveform to described interferometric modulator, to change described interferometric modulator between activation and release conditions or between release conditions and state of activation;

    Settle fluorescence detector, described fluorescence detector to be suitable for detecting and produce signal corresponding to described detected light from the light of described a plurality of interferometric modulators reflections; With

    Settle computing machine, described computing machine is configured to receive the signal from described fluorescence detector, and determines one or more response time parameters of described interferometric modulator based on described signal.
42. 42. one kind by the system that is used to test a plurality of interferometric modulators according to the described method manufacturing of claim 41.
43. 43. the method for a plurality of interferometric modulators of test, described method comprises:

    Apply voltage waveform to described interferometric modulator, to change described interferometric modulator between state of activation and the release conditions or between release conditions and state of activation, wherein when standing bias voltage, described interferometric modulator is applied for the state that changes described interferometric modulator and the voltage that applies;

    When applying described voltage waveform, detect from the light of described interferometric modulator reflection; With

    Determine one or more response time parameters of at least a portion in the described interferometric modulator based on the described reflected light of described detection.
44. 44. according to the described method of claim 43, wherein said one or more response time parameters are based on the slowest activationary time of one or more interferometric modulators.
45. 45. according to the described method of claim 43, wherein said determining step is determined the activationary time by at least a portion that applies the described interferometric modulator that negative activation voltage activates.
46. 46. according to the described method of claim 43, wherein said determining step is determined the activationary time of at least a portion of the described interferometric modulator that activates by the part with positive activation voltage that applies in the described voltage waveform.
47. 47. according to the described method of claim 43, wherein said determining step is determined the release time of at least a portion of the described interferometric modulator that discharges by the part with positive release voltage that applies in the described voltage waveform.
48. 48. according to the described method of claim 43, wherein said determining step is determined the release time of at least a portion of described interferometric modulator during the part with negative release voltage in applying described voltage waveform.
49. 49. according to the described method of claim 43, wherein said voltage waveform comprises: first, it is in the voltage level that described interferometric modulator is placed state of activation; Second portion, it is in bias level; And third part, it is in the voltage level that is enough to make described interferometric modulator release.
50. 50. according to the described method of claim 43, wherein said voltage waveform comprises: first, it is in the voltage level that described interferometric modulator is placed release conditions; Second portion, it is in bias level; And third part, it is in the voltage level that is enough to make described interferometric modulator activation.
51. 51. the system of a plurality of interferometric modulators of test, it comprises:

    Voltage source, it is configured to apply voltage waveform to described interferometric modulator, thereby changes described interferometric modulator between activation and release conditions or between release conditions and state of activation;

    Light source, it is through locating with the described interferometric modulator that throws light on;

    Detecting device, it is through settling to receive from the light of described interferometric modulator and to produce corresponding signal; With

    Computing machine, it is configured to receive the signal from described detecting device, and determines one or more response time parameters of described interferometric modulator during applying activation voltage or release voltage based on described signal.
52. 52. according to the described system of claim 51, wherein said one or more response parameters are based on the slowest activationary time of one or more interferometric modulators.
53. 53. according to the described system of claim 51, wherein said computing machine further is configured to determine the activation response time of at least a portion of described interferometric modulator during the part with negative activation voltage level in applying described voltage waveform.
54. 54. according to the described system of claim 51, wherein said computing machine further is configured to determine the activation response time with at least a portion of described interferometric modulator during the part that just activates voltage level in applying described voltage waveform.
55. 55. according to the described system of claim 51, wherein said computing machine further is configured to the release response time of at least a portion of definite described interferometric modulator.
56. 56. according to the described system of claim 51, wherein said computing machine further is configured to determine the release time of at least a portion of described interferometric modulator during the part with negative release voltage in applying described voltage waveform.
57. 57. according to the described system of claim 51, wherein said computing machine further is configured to determine the activationary time of at least a portion of described interferometric modulator during applying negative activation voltage.
58. 58. according to the described system of claim 51, wherein said computing machine further is configured to determine the activationary time of at least a portion of described interferometric modulator during applying positive activation voltage.
59. 59. a system that is used to test a plurality of interferometric modulators, it comprises:

    Be used for applying voltage waveform between activation and release conditions or between release conditions and state of activation, to change the member of described interferometric modulator to described interferometric modulator;

    The member of described interferometric modulator is used to throw light on;

    Be used for sensing from the light of described interferometric modulator reflection and produce the member of corresponding signal; With

    Be used for determining the member of one or more response time parameters of described interferometric modulator during applying activation voltage or release voltage based on described signal.
60. 60. according to the described system of claim 59, wherein said one or more response time parameters are based on the slowest activationary time of one or more interferometric modulators.
61. 61. according to the described system of claim 59, the wherein said member that applies comprises controllable voltage source.
62. 62. according to the described system of claim 59, wherein said illuminating member comprises light source.
63. 63. according to the described system of claim 59, wherein said sensing member comprises photodetector.
64. 64. according to claim 59,61,62 or 63 described systems, wherein said definite member comprises computing machine.
65. 65. a manufacturing is used to test the method for the system of a plurality of interferometric modulators, described method comprises:

    Voltage source is provided, and described voltage source is configured to apply voltage waveform to described interferometric modulator, thereby changes described interferometric modulator between activation and release conditions or between release conditions and state of activation;

    Positioned light source is with the described interferometric modulator that throws light on;

    Positioning detector is to receive from the light of described interferometric modulator reflection, and described detecting device is configured to produce the signal corresponding to the described light that receives; With

    Computing machine is coupled to described detecting device, described computing machine is configured to receive the signal from described detecting device, and determines one or more response time parameters of described interferometric modulator during applying activation voltage or release voltage based on described signal.
66. 66. one kind by the system that is used to test a plurality of interferometric modulators according to the described method manufacturing of claim 65.
67. 67. the method for a plurality of interferometric modulators of test, described method comprises:

    Setting applies the time cycle that switching voltage levels continues, and described switching voltage levels is enough to changing described interferometric modulator between release conditions and the state of activation or between state of activation and release conditions;

    Apply the voltage waveform that comprises described switching voltage levels and continue the described time cycle;

    Detection is from the light of described interferometric modulator reflection;

    Determine one or more response time parameters of described interferometric modulator based on described detection; With

    Repeat described setting, apply, detection and determining step reach the minimum time cycle that threshold value is continued with identification, the intended pixel number that described threshold value indication has activated or discharged.
68. 68. according to the described method of claim 67, wherein said one or more response time parameters are based on the slowest activationary time of one or more interferometric modulators.
69. 69., wherein when described interferometric modulator stands bias voltage, be applied for the state that changes described interferometric modulator and the voltage that applies according to the described method of claim 67.
70. 70. according to the described method of claim 67, the step of wherein said detection of reflected light comprises visual analysis.
71. 71. according to the described method of claim 67, the step of wherein said detection of reflected light is included in and receives described light in the optical system and measure contrast.
72. 72., determine that wherein the step of one or more response time parameters comprises definite response time of activating according to the described method of claim 67.
73. 73., determine that wherein the step of one or more response time parameters comprises definite response time that discharges according to the described method of claim 67.
74. 74. a system that is used to test a plurality of interferometric modulators, it comprises:

    Computing machine, it is configured to determine to apply the time cycle that switching voltage levels continues, and described switching voltage levels is enough at the interferometric modulator that changes predetermined number between release conditions and the state of activation or between state of activation and release conditions;

    Voltage source, it is by described computer control, and described voltage source is configured to apply the voltage waveform that comprises described switching voltage levels and continues the described time cycle;

    Light source, it is through locating with the described interferometric modulator that throws light on; With

    Detecting device, it receiving from the light of described interferometric modulator reflection, and produces signal corresponding to the described light that receives through the location,

    Wherein said computing machine is configured to receive the signal from described detecting device, and based on described signal, change the time span be used to apply described voltage waveform repeatedly and reach the minimum time cycle that threshold value is continued with the number that is identified in the pixel that has activated during described definite time cycle or discharged, and based on definite one or more response time parameters of the minimum time cycle of described identification.
75. 75. according to the described system of claim 74, wherein said one or more response time parameters are based on the slowest activationary time or the release time of one or more interferometric modulators.
76. 76. a system that is used to test a plurality of interferometric modulators, it comprises:

    Be used to determine to apply the member of the time cycle that switching voltage levels continues, described switching voltage levels is enough to changing described a plurality of interferometric modulators between unactivated state and the state of activation or between state of activation and unactivated state;

    Be used for applying to described a plurality of interferometric modulators the member of voltage waveform, the described member that applies is configured to apply lasting described definite time cycle of described voltage waveform;

    The member of described interferometric modulator is used to throw light on; With

    Be used for sensing from the light of described interferometric modulator reflection and produce member corresponding to the signal of the described light that receives,

    Wherein said definite member receives the described signal from described sensing member, and wherein said definite member is configured to control the described member that applies and applies described voltage waveform repeatedly and continue a plurality of definite time cycles, and reaches the minimum time cycle that threshold value continues based on the number that described signal is discerned the pixel that has activated in described definite time cycle or discharged.
77. 77. according to the described system of claim 76, wherein said one or more response time parameters are based on the slowest activationary time or the release time of one or more interferometric modulators.
78. 78. according to the described system of claim 76, wherein said definite member comprises computing machine.
79. 79. according to the described system of claim 76, the wherein said member that applies comprises voltage source.
80. 80. according to the described system of claim 76, wherein said illuminating member comprises light source.
81. 81. according to claim 76,78,79 or 80 described systems, wherein said sensing member comprises photodetector.
82. 82. a manufacturing is used to test the method for the system of a plurality of interferometric modulators, it comprises:

    Computing machine is provided, and described computing machine is configured to determine to apply the time cycle that switching voltage levels continues, and described switching voltage levels is enough to changing described interferometric modulator between release conditions and the state of activation or between state of activation and release conditions;

    Voltage source is coupled to described computing machine, and described voltage source is configured to apply the voltage waveform that comprises described switching voltage levels and continues the described time cycle;

    Positioned light source is with the described interferometric modulator that throws light on; With

    Positioning detector to be receiving from the light of described interferometric modulator reflection, and produces the signal corresponding to the described light that receives,

    Wherein said computing machine is configured to receive the signal from described detecting device, and based on described signal, change the time span be used to apply described voltage waveform repeatedly and reach the minimum time cycle that threshold value is continued with the number that is identified in the pixel that has activated during described definite time cycle or discharged, and based on definite one or more response time parameters of the minimum time cycle of described identification.
83. 83. one kind by the system that is used to test a plurality of interferometric modulators of 2 described method manufacturings according to Claim 8.
84. 84. an equipment that is used to test a plurality of interferometric modulators, described equipment comprises:

    Be used for applying voltage waveform between activation and release conditions or between release conditions and state of activation, to change the member of the state of described interferometric modulator to described interferometric modulator;

    Be used for when applying described voltage waveform detecting from the light of described interferometric modulator reflection member as the function of time; With

    Be used for determining the member of one or more response time parameters of described interferometric modulator based on described detection.
85. 85. an equipment that is used to test a plurality of interferometric modulators, described equipment comprises:

    Be used for applying voltage waveform with at the member that changes described interferometric modulator between state of activation and the release conditions or between release conditions and state of activation, wherein when described interferometric modulator stands bias voltage, be applied for the state that changes described interferometric modulator and the voltage that applies to described interferometric modulator;

    Be used for when applying described voltage waveform, detecting member from the light of described interferometric modulator reflection; With

    Be used for determining the member of one or more response time parameters of at least a portion of described interferometric modulator based on the described reflected light of described detection,

    The measured value that described whereby one or more response time parameters are responses of described interferometric modulator.
86. 86. an equipment that is used to test a plurality of interferometric modulators, described equipment comprises:

    Be used to set the member that applies the time cycle that switching voltage levels continues, described switching voltage levels is enough to changing described interferometric modulator between release conditions and the state of activation or between state of activation and release conditions;

    Be used to apply the member that the voltage waveform that comprises described switching voltage levels continues the described time cycle;

    Be used to detect member from the light of described interferometric modulator reflection;

    Be used for determining the member of one or more response time parameters of described interferometric modulator based on described detection; With

    Be used to repeat described setting, apply, detection and determining step reach the member in the minimum time cycle that threshold value continued, the intended pixel number that described threshold value indication has activated or discharged with identification.

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