CN1844449A - Device and method for surface treatment of hollow cathode plasma in inner surface of slimline - Google Patents
Device and method for surface treatment of hollow cathode plasma in inner surface of slimline Download PDFInfo
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- CN1844449A CN1844449A CN 200610010001 CN200610010001A CN1844449A CN 1844449 A CN1844449 A CN 1844449A CN 200610010001 CN200610010001 CN 200610010001 CN 200610010001 A CN200610010001 A CN 200610010001A CN 1844449 A CN1844449 A CN 1844449A
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Abstract
This invention relates to the hollow cathode plasma surface dealing device and method, wherein the hollow cathode plasma is in the elongated tubular inner face. The dealing device structure in this invention has number one metal tube (1) and number two metal tube (2), wherein the number two tube is arranged in the number one metal tube (1) and insolated with number one metal tube (1), the number one metal tube (1) is connected with earth, the number two metal tube (2) is connected with radio-frequency electrode. The proposal method as follows: connecting the wait deal elongated tubular (7) with the negative biased power; injecting gas into number two metal tube (2) and connecting with the frequency power, controlling the axial displacement of the disposal device in the elongated tubular (7). The advantage in this invention is that the dealt hollow cathode radio frequency discharge is not limited by the deposal tube's diameter, so the inner diameter can be reduced, and the disposal is uniform, the method is simply and has good effect.
Description
Technical field
The present invention relates to a kind of surface processing device and treatment process.
Background technology
It is that the surface modification treatment technology is used the difficult technology that realizes that internal surface of elongated tube injects processing always.If adopt traditional beamline ion implanters to inject, for the socket that has than high-fineness ratio, ion or in socket, pass, or enter the socket inwall with the angle that comparatively tilts, injection effect is less as a result, and splash effect is big.Proposed a kind of ion implantation novel process afterwards in the eighties in last century, promptly plasma ion injects.This technology is to produce plasma body in vacuum chamber earlier, and plasma body can be diffused into socket inside to a certain extent, applies negative bias then on socket, and the ion in the socket internal plasma will be injected on the socket inwall like this.But problem is that the plasma density distribution of coming in by such diffusion is inhomogeneous, especially for than high-fineness ratio and the thinner socket of socket, socket centre plasma body is less even do not have, ion implantationly so also just do not know where to begin, and it is low to utilize diffusion to obtain the method processing efficiency of internal plasma.
Summary of the invention
Handle the using plasma method for implanting for elongated socket work piece inner surface and have the inhomogeneous and low problem of processing efficiency of plasma distribution, the invention provides a kind of can the processing and device and treatment process that can even processing the work piece inner surface of big slenderness ratio.
A kind of elongated tubular tube inner surface hollow cathode plasma surface processing device, it comprises metal tube 1 No. one, at No. two metal tubes 2 of metal tube 1 an inner setting with its mutually insulated, described No. two metal tube 2 front ends are arranged on the inside of a metal tube 1; A described metal tube 1 is connected with ground by lead, and No. two metal tube 2 is connected with radio-frequency electrode 4 by lead.
The method that the elongated tubular tube inner surface is handled is installed in a kind of use as mentioned above, is arranged on pending elongated socket 7 in the vacuum chamber and elongated socket 7 is connected with the negative bias power supply; Select the treatment unit of the external diameter of a metal tube 1 less than processed elongated socket 7 internal diameters, a metal tube 1 is connected with ground by lead, No. two metal tube 2 is connected with radio-frequency electrode 4 by lead; Injecting gas and control described treatment unit and move axially in elongated socket 7 in No. two metal tubes 2 can be realized the processing to the elongated tubular tube inner surface.
Apparatus and method of the present invention can by the mobile and operation of this device in socket inside, can realize the homogeneity that elongated socket inwall is injected at the inner plasma body that produces of elongated socket.The advantage of maximum of the present invention is: the hollow cathode radio frequency discharge of processed elongated socket workpiece inside is subjected to processed socket diameter restrictions hardly, and treatable so elongated socket inner diameter of workpiece can reduce greatly.And, can realize the evenly ion implantation of whole socket by moving of hollow cathode, this has solved and has utilized the plasma ion method for implanting to handle the inner problem that is difficult to obtain plasma body of inhomogeneous, the tiny socket of plasma body that work piece inner surface exists, and described method simply is suitable for effective, is beneficial to and applies.
Description of drawings
Fig. 1 is an apparatus structure synoptic diagram of the present invention, and Fig. 2 is embodiment two described structural representations, and Fig. 3 is embodiment three described structural representations.
Embodiment
Embodiment one: present embodiment is a kind of elongated tubular tube inner surface hollow cathode plasma surface processing device, with reference to Fig. 1, it comprises metal tube 1 No. one, at No. two metal tubes 2 of metal tube 1 an inner setting with its mutually insulated, described No. two metal tube 2 front ends are arranged on the inside of a metal tube 1, the purpose of doing like this be the electric field that the time when processed elongated socket 7 is connected with the negative bias power supply, produced for fear of work to No. two metal tubes 2 in the plasma body of generation make a difference; A described metal tube 1 is connected with ground by lead, and No. two metal tube 2 is connected with radio-frequency electrode 4 by lead.
Present embodiment is provided with in the rear end of a metal tube 1 and No. two metal tubes 2 and is used for a metal tube 1 and No. two metal tubes 2 are carried out fixed insulating fixing piece 8, with reference to Fig. 1, a metal tube 1 and No. two metal tubes 2 can be fixed on the same insulating fixing piece, also can be fixing respectively under the prerequisite that guarantees right alignment.The advantage that the treatment unit of described structure has is simple in structure, save cost.
The method of using described device that the elongated tubular tube inner surface is handled is, at first, is arranged on pending elongated socket 7 in the vacuum chamber and elongated socket 7 is connected with the negative bias power supply; Select the treatment unit of the external diameter of a metal tube 1 less than processed elongated socket 7 internal diameters then, a metal tube 1 is connected with ground or vacuum-chamber wall by lead, No. two metal tube 2 is connected with radio-frequency electrode 4 by lead; Injecting gas and control described treatment unit and move axially in elongated socket 7 in No. two metal tubes 2 can be realized the processing to the elongated tubular tube inner surface.
Principle of the present invention is to utilize the hollow cathode discharge effect to utilize the negative bias that applies on the socket to realize the internal surface ion injection process then at the inner plasma body that produces of socket.Detailed process is as follows: the gas of importing is by the front end ejection of No. two metal tubes 2, under radio frequency power effect by No. two metal tube 2 introducings, discharge is in a metal tube 1 (ground connection) and 2 generations of No. two metal tubes, under suitable radio frequency power and air pressure conditions, form hollow cathode effect, and obtain required plasma body.By metal tube 1 a port ejection, and spread everywhere to processed socket 7 inside under the effect of this plasma body air-flow in No. two metal tubes 2 along metal tube 1 port.Apply negative bias on the socket 7 this moment, forms electric field between metal tube 1 and processed socket, and the ion in the induced plasma flies to the socket inwall fast, forms ion implantation effect.Can in socket, axially move by the whole device of driven by motor during work, can realize processing whole socket inwall.Radio frequency power during work, air pressure conditions and the isoparametric control of negative bias power supply and prior art do not have difference.
Embodiment two: present embodiment and embodiment one difference are, described insulation mode is between a metal tube 1 and No. two metal tubes 2 insulation tube 3 to be set No. one, with reference to Fig. 2, the purpose that an insulation tube 3 is set is better to guarantee the contact that do not meet accident between two metal tubes.
Embodiment three: present embodiment and embodiment two differences are, it also comprises No. three metal tubes 6 and No. two insulation tubes 5, with reference to Fig. 3, described No. three metal tubes 6 are serially connected on No. two metal tubes 2 and the lead that radio-frequency electrode 4 is connected, one end of No. three metal tubes 6 is connected with the rear portion shrink-fit of an insulation tube 3, the other end of No. three metal tubes 6 is connected with No. two insulation tube 5 shrink-fit, between described No. two metal tubes 2 and the insulation tube 3, all be that shrink-fit is connected between insulation tube 3 and the metal tube 1.No. two insulation tubes 5 are set can better be connected with gas source, and No. three metal tube 6 makes No. two metal tubes 2 realize better being connected and guaranteeing discharging near metal tube 2 with radio-frequency power supply.
Embodiment four: the described insulation tube 3 of present embodiment and No. two insulation tubes 5 all are vitrified pipes, adopt the purpose of vitrified pipe to be that stupalith not only insulate, and also have resistant to elevated temperatures advantage simultaneously.
Embodiment five: present embodiment and previous embodiment difference are, the front end of described No. two metal tubes 2 is cross section through hole 2-1 less than internal diameter, with reference to Fig. 3, the purpose that the front end of No. two metal tubes 2 is provided with a shrinkage hole is to produce plasma body more easily.Through hole 2-1 is set to be not limited on the treatment unit of embodiment three described structures; the described through hole 2-1 of present embodiment can be set on embodiment one, two described structures; can both realize identical effect, all within protection scope of the present invention.
Embodiment six: the described treatment unit of present embodiment will move with uniform velocity when elongated socket is handled, and uniform motion can better guarantee the homogeneity to the injection of socket inwall.
Embodiment seven: present embodiment and embodiment six differences are that described treatment unit also rotates when axially moving, rotatablely move and can avoid ununiformity ion implantation on the circumferential direction.
Device of the present invention can be applied to ion implantation, carbon film deposition, nitrogenize, the carbonization to the elongated tubular tube inner surface; and other processing intents for the socket inwall need; so long as the structure of device of the present invention and method, promptly should be within protection scope of the present invention.
Claims (10)
1. elongated tubular tube inner surface hollow cathode plasma surface processing device, it is characterized in that it comprises a metal tube (1), at No. two metal tubes (2) of the inner setting of a metal tube (1) with its mutually insulated, described No. two metal tubes (2) front end is arranged on the inside of a metal tube (1); A described metal tube (1) is connected with ground by lead, and No. two metal tubes (2) are connected with radio-frequency electrode (4) by lead.
2. elongated tubular tube inner surface hollow cathode plasma surface processing device according to claim 1 is characterized in that being provided with insulating fixing piece (8) in the rear end of a metal tube (1) and No. two metal tubes (2).
3. elongated tubular tube inner surface hollow cathode plasma surface processing device according to claim 1 is characterized in that described insulation mode is between a metal tube (1) and No. two metal tubes (2) insulation tube (3) to be set.
4. elongated tubular tube inner surface hollow cathode plasma surface processing device according to claim 3 is characterized in that a described insulation tube (3) is a vitrified pipe.
5. elongated tubular tube inner surface hollow cathode plasma surface processing device according to claim 3, it is characterized in that it also comprises No. three metal tubes (6) and No. two insulation tubes (5), described No. three metal tubes (6) are serially connected on No. two metal tubes (2) and the lead that radio-frequency electrode (4) is connected, one end of No. three metal tubes (6) is connected with the rear portion shrink-fit of an insulation tube (3), the other end of No. three metal tubes (6) is connected with No. two insulation tubes (5) shrink-fit, between described No. two metal tubes (2) and the insulation tube (3), between an insulation tube (3) and the metal tube (1) all is that shrink-fit is connected.
6. elongated tubular tube inner surface hollow cathode plasma surface processing device according to claim 5 is characterized in that described No. two insulation tubes (5) are vitrified pipes.
7. according to claim 1,2,3,4,5 or 6 described elongated tubular tube inner surface hollow cathode plasma surface processing devices, it is characterized in that the front end of described No. two metal tubes (2) is provided with the through hole (2-1) of cross section less than internal diameter.
8. a method of using the described device of claim 1 that the elongated tubular tube inner surface is handled is characterized in that being arranged on pending elongated socket (7) in the vacuum chamber and elongated socket (7) being connected with the negative bias power supply; Select the treatment unit of the external diameter of a metal tube (1) less than processed elongated socket (7) internal diameter, a metal tube (1) is connected with ground by lead, No. two metal tubes (2) are connected with radio-frequency electrode (4) by lead; Injecting gas and control described treatment unit and move axially in elongated socket (7) in No. two metal tubes (2) can be realized the processing to the elongated tubular tube inner surface.
9. the method that the elongated tubular tube inner surface is handled according to claim 8 is characterized in that described treatment unit moves with uniform velocity.
10. according to Claim 8 or the 9 described methods that the elongated tubular tube inner surface is handled, it is characterized in that described treatment unit also rotates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610010001XA CN100467663C (en) | 2006-04-30 | 2006-04-30 | Device and method for surface treatment of hollow cathode plasma in inner surface of slimline |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610010001XA CN100467663C (en) | 2006-04-30 | 2006-04-30 | Device and method for surface treatment of hollow cathode plasma in inner surface of slimline |
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| Publication Number | Publication Date |
|---|---|
| CN1844449A true CN1844449A (en) | 2006-10-11 |
| CN100467663C CN100467663C (en) | 2009-03-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB200610010001XA Active CN100467663C (en) | 2006-04-30 | 2006-04-30 | Device and method for surface treatment of hollow cathode plasma in inner surface of slimline |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101343725B (en) * | 2008-08-23 | 2010-08-18 | 牛君 | Method and apparatus for forming different seeping layer on different surfaces when ion inleakage of object |
| CN101365289B (en) * | 2008-09-28 | 2011-05-11 | 哈尔滨工业大学 | Device and method for injecting ion on inner surface of hollow cathode coupling positive voltage bias voltage tube |
| CN102712998A (en) * | 2009-12-18 | 2012-10-03 | 分之一技术公司 | Chemical vapor deposition for an interior of a hollow article with high aspect ratio |
| CN103747607A (en) * | 2013-12-24 | 2014-04-23 | 苏州市奥普斯等离子体科技有限公司 | Far zone plasma spray gun device |
| CN105755452A (en) * | 2016-04-18 | 2016-07-13 | 北京大学 | Device for spraying TiO2 nano coating on inner wall of pipe cavity |
| CN116855885A (en) * | 2023-07-05 | 2023-10-10 | 哈尔滨工业大学 | Device and method for rapidly and uniformly depositing metal film on inner wall of slender tube piece through electric field auxiliary pulse enhanced columnar cathode arc |
-
2006
- 2006-04-30 CN CNB200610010001XA patent/CN100467663C/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101343725B (en) * | 2008-08-23 | 2010-08-18 | 牛君 | Method and apparatus for forming different seeping layer on different surfaces when ion inleakage of object |
| CN101365289B (en) * | 2008-09-28 | 2011-05-11 | 哈尔滨工业大学 | Device and method for injecting ion on inner surface of hollow cathode coupling positive voltage bias voltage tube |
| CN102712998A (en) * | 2009-12-18 | 2012-10-03 | 分之一技术公司 | Chemical vapor deposition for an interior of a hollow article with high aspect ratio |
| CN102712998B (en) * | 2009-12-18 | 2014-12-03 | 分之一技术公司 | Chemical vapor deposition for an interior of a hollow article with high aspect ratio |
| CN103747607A (en) * | 2013-12-24 | 2014-04-23 | 苏州市奥普斯等离子体科技有限公司 | Far zone plasma spray gun device |
| CN105755452A (en) * | 2016-04-18 | 2016-07-13 | 北京大学 | Device for spraying TiO2 nano coating on inner wall of pipe cavity |
| CN116855885A (en) * | 2023-07-05 | 2023-10-10 | 哈尔滨工业大学 | Device and method for rapidly and uniformly depositing metal film on inner wall of slender tube piece through electric field auxiliary pulse enhanced columnar cathode arc |
| CN116855885B (en) * | 2023-07-05 | 2023-12-08 | 哈尔滨工业大学 | Device and method for rapidly and uniformly depositing metal film on inner wall of slender tube piece through electric field auxiliary pulse enhanced columnar cathode arc |
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| Publication number | Publication date |
|---|---|
| CN100467663C (en) | 2009-03-11 |
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