CN205017675U - Plasma jet device and subassembly - Google Patents
Plasma jet device and subassembly Download PDFInfo
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- CN205017675U CN205017675U CN201520131434.5U CN201520131434U CN205017675U CN 205017675 U CN205017675 U CN 205017675U CN 201520131434 U CN201520131434 U CN 201520131434U CN 205017675 U CN205017675 U CN 205017675U
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- jockey
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- plasma jet
- insulated tube
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a plasma jet device and subassembly, its hollow shaft -like metal outer body (2) that include ground connection, its characterized in that still includes: insulating tube (3), the metal cathode body (4), metal anode body (6), inlet channel (8). The utility model discloses can block that the sodium ion among the encapsulation glass gets into the silicon chip surface to prevent a large amount of complexes of sodium ion carrier in battery pack is caused to the defect position that crystal silicon surface micron order had been caused to piling up of crystal silicon surface, lead to battery pack's power output to reduce, simultaneously, also pollutants such as fingerprint in order to eliminate battery piece surface.
Description
Technical field
The utility model relates to the atmosphere pressure plasma jet flow device for material surface deep oxidation and surface clean.
Background technology
Low temperature plasma includes electronics and the important energy carrier of these two, ion, the excited state particle of large-scale electronics and ion energy distribution and high activity plasma is possessed metachemistry ability, thus cause in conventional chemical reaction the physical change and chemical reaction that can not or be difficult to realize.These features determine plasma and have possessed extensive use as film growth, substrate etching, material surface modifying, biological surface modification, cell separation, sterilizing, air cleaning and Plasma Stealth etc. at numerous areas.
As everyone knows, the photovoltaic generation based on solar energy is 21st century one of most important utilization of new energy resources, and wherein, the photovoltaic generation of crystal silicon solar cell sheet is the mainstream technology of current photovoltaic art.But, these crystal silicon battery assemblies in the various atmospheric environment of experience especially under damp and hot severe environmental conditions, through usually there will be the problem of the potential induction attenuation (PID) of so-called power stage after a period of time.Main cause is because the EVA glue between packaged glass and crystal silicon chip occurs aging, define some microchannels, under the forceful electric power gesture effect of battery component, the sodium ion of packaged glass kind can enter into crystal silicon surface along microchannel, these sodium ions cause the defective bit of crystal silicon surface micrometre-grade in the accumulation on crystal silicon surface, these blemish positions cause a large amount of compounds of charge carrier in battery component, and the power stage that directly results in battery component reduces.
Enter into crystal silicon surface for overcoming sodium ion, on the one hand, researchers set about from the improvement aspect of EVA glue, improve the impedance operator of EVA glue, delay entering of sodium ion, but cost are relatively high, also have a longer segment distance from practical application; On the other hand, researchers are on the barrier layer of the fine and close SiOx of crystal silicon surface-coated one deck, stop entering of sodium ion, such as, using plasma strengthens chemical gaseous phase depositing process and utilizes laughing gas (N2O) and silane (SiH4) as the barrier layer of presoma at crystal silicon superficial growth SiOx, but to grow SiOx film fine and close not, actual blocking effect is unsatisfactory; Also have and directly adopt Ozone oxidation method to grow the silica of one deck 2-3nm at crystal silicon surface enhanced, the application that the method is existing certain aborning at present, but still be faced with the unfavorable factors such as thinner thickness, oxidation depth are inadequate.
In addition; in crystal-silicon battery slice processing and operating process; operative employee often casually can leave the pollutants such as fingerprint on cell piece surface; these pollutants were difficult to be perceiveed before crystal silicon chip coating anti-reflection layer SiNx film; and once after coating anti-reflection layer; fingerprint trace clearly, the serious outward appearance affecting cell piece.Sometimes, crystal-silicon battery slice finished surface also leaves some fingerprints.
Utility model content
The technical problems to be solved in the utility model is to provide and a kind ofly can enters the device of silicon chip surface from the microchannel of EVA glue by sodium ion in barrier encapsulation glass.
For solving the problem, the utility model provides a kind of plasma jet device, comprises the hollow shaft-like metal outer pipe body of ground connection, it is characterized in that, also comprise:
-insulated tube, is arranged in the inner chamber of described outer tube body, the axis being parallel of its axis and described outer tube body;
-metallic cathode body, is arranged in the inner chamber of described insulated tube and is connected with the radio-frequency (RF) output end of radio frequency output device, and described cathode is the axis being parallel of rod-like structure and its axis and described insulated tube;
-metal anode body, be hollow rod-like structure, its inner wall sleeve of described anode bodies is located on the outer wall of described insulated tube, and its outer wall is clamped in described outer tube body inwall;
-inlet channel, the inner space of itself and described insulated tube, the gas outlet of described inlet channel is arranged on the outside of described fluidic device.
As further improvement of the utility model, also comprise interconnective first jockey and the second jockey, one end of described cathode is clamped on described first jockey, and the outer wall of described outer tube body is clamped on described second jockey.
As further improvement of the utility model, the connected mode of described first jockey and the second jockey is Flange joint, and the clamping mode of described cathode, outer tube body and described first jockey, the second jockey is to feel relieved and clamps.
As further improvement of the utility model, described cathode is tungsten filament.
A kind of plasma jet assembly, comprising:
Fluidic device as described in as wherein arbitrary in claim 1-4;
Be connected to the inlet duct on the inlet channel of described fluidic device; And
Can to the radio-frequency power supply of feed-in radio-frequency power in the cathode of described fluidic device;
Described gas dispensing device can send in argon gas, oxygen in described inlet channel one or more.
A kind of crystal silicon battery process for surface oxidation, is characterized in that comprising the following steps:
A1, the negative electrode in the hollow tubular insulated tube of fluidic device is adjusted to the axle center of described insulated tube, described negative electrode is retracted within described insulated tube, described insulated tube protrudes from outside setting hollow tubular anode bodies on its external wall, regulate radio-frequency power supply, to described cathode feed-in radio-frequency power;
B1, by inlet duct to the inlet channel of described insulated tube inner space in pass into argon gas and oxygen mixed gas;
C1, fluidic device is being carried out two-dimentional rank scanning with the polysilicon chip surface of soaking in 4% hydrofluoric acid solution evenly.
Further, in steps A 1, radio-frequency power is 20MHz.
Further, in mist, the content of oxygen is less than 0.5%.
Further, in step B1, mixed gas flow is 10SLM, and wherein the flow of oxygen is 20SCCM, in addition, described radio-frequency power supply is adjusted to 70W.
A kind of crystal silicon battery surface decontamination method, is characterized in that, comprise the following steps:
A2, the negative electrode in the hollow tubular insulated tube of fluidic device is adjusted to the axle center of described insulated tube, described negative electrode is retracted within described insulated tube, described insulated tube protrudes from outside setting hollow tubular anode bodies on its external wall, regulating radio-frequency power supply, is 13.56MHz to described cathode feed-in radio-frequency power;
B2, by inlet duct to the inlet channel of described insulated tube inner space in pass into argon gas and oxygen mixed gas 8SLM, wherein the flow of oxygen is 10SCCM, regulates the discharge power radio frequency of radio-frequency power supply to be 100W simultaneously;
C2, the jet of fluidic device is radiated on the stain on crystal silicon battery surface;
D2, the crystal silicon chip of jet process is put into deionized water rinsing;
E2, the crystal silicon chip after rinsing to be put into temperature be that the baking oven of 110 degree carries out drying and processing.
The beneficial effects of the utility model are, the utility model can enter silicon chip surface by the sodium ion in barrier encapsulation glass, thus prevent sodium ion from causing a large amount of compounds of charge carrier in battery component in the defective bit that the accumulation on crystal silicon surface causes crystal silicon surface micrometre-grade, the power stage of battery component is caused to reduce, meanwhile, also in order to eliminate the pollutants such as the fingerprint on cell piece surface.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Wherein: 2-outer tube body; 3-insulated tube; 4-metallic cathode body; 6-metal anode body; 8-inlet channel; 10-first jockey; 12-second jockey.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
As shown in Figure 1, the utility model comprises the hollow shaft-like metal outer pipe body 2 of ground connection, it is characterized in that, also comprises:
-insulated tube 3, is arranged in the inner chamber of described outer tube body 2, the axis being parallel of its axis and described outer tube body 2;
-metallic cathode body 4, is arranged in the inner chamber of described insulated tube 3 and is connected with the radio-frequency (RF) output end of radio frequency output device, and described metallic cathode body 4 is the axis being parallel of rod-like structure and its axis and described insulated tube;
-metal anode body 6 is hollow rod-like structure, and described its inner wall sleeve of metal anode body 6 is located on the outer wall of described insulated tube 3, and its outer wall is clamped in described outer tube body 2 inwall;
-inlet channel 8, the inner space of itself and described insulated tube 3, the gas outlet of described inlet channel 8 is arranged on the outside of described fluidic device.
As further improvement of the utility model, also comprise interconnective first jockey 10 and the second jockey 12, one end of described metallic cathode body 4 is clamped on described first jockey 10, and the outer wall of described outer tube body 2 is clamped on described second jockey 12.
As further improvement of the utility model, the connected mode of described first jockey 10 and the second jockey 12 is Flange joint, and described metallic cathode body 4, outer tube body 2 are to feel relieved with the clamping mode of described first jockey 10, second jockey 12 and clamp.
As further improvement of the utility model, described metallic cathode body 4 is tungsten filament.
As further improvement of the utility model, the length 1-4mm of described metallic cathode body 4, its discharge end adopts pyramidal structure, its cone angle radius of curvature is 0.5mm-3mm, its cone point indentation grounding ports 3mm-10mm, the internal diameter of described insulated tube 3 is 6mm, and its outstanding described grounding ports is about 3mm-10mm.
A kind of plasma jet assembly, comprising:
Fluidic device as described in as wherein arbitrary in claim 1-5;
Be connected to the inlet duct on the inlet channel 8 of described fluidic device; And
Can to the radio-frequency power supply of feed-in radio-frequency power in the metallic cathode body 4 of described fluidic device;
Described gas dispensing device can send in argon gas, oxygen in described inlet channel 8 one or more.
A kind of crystal silicon battery process for surface oxidation, is characterized in that comprising the following steps:
A1, the negative electrode in the hollow tubular insulated tube 3 of fluidic device is adjusted to the axle center of described insulated tube 3, described negative electrode is retracted within described insulated tube 3, described insulated tube 3 protrudes from outside setting hollow tubular metal anode body 6 on its external wall, regulate radio-frequency power supply, to described metallic cathode body 4 feed-in radio-frequency power;
B1, by inlet duct to the inlet channel 8 of described insulated tube 3 inner space in pass into argon gas and oxygen mixed gas;
C1, fluidic device is being carried out two-dimentional rank scanning with the polysilicon chip surface of soaking in 4% hydrofluoric acid solution evenly.
Further, in steps A 1, radio-frequency power is 20Hz.
Further, in mist, the content of oxygen is less than 0.5%.
Further, in step B1, mixed gas flow is 10000SLM, and wherein the flow of oxygen is 20SCCM, in addition, described radio-frequency power supply is adjusted to 70W.
A kind of crystal silicon battery surface decontamination method, is characterized in that, comprise the following steps:
A2, the negative electrode in the hollow tubular insulated tube 3 of fluidic device is adjusted to the axle center of described insulated tube 3, described negative electrode is retracted within described insulated tube 3, described insulated tube 3 protrudes from outside setting hollow tubular metal anode body 6 on its external wall, regulating radio-frequency power supply, is 13.56MHz to described metallic cathode body 4 feed-in radio-frequency power;
B2, by inlet duct to the inlet channel 8 of described insulated tube 3 inner space in pass into argon gas and oxygen mixed gas 8SLM, wherein the flow of oxygen is 10SCCM, regulates the discharge power radio frequency of radio-frequency power supply to be 100W simultaneously;
C2, the jet of fluidic device is radiated on the stain on crystal silicon battery surface;
D2, the crystal silicon chip of jet process is put into deionized water rinsing;
E2, the crystal silicon chip after rinsing to be put into temperature be that the baking oven of 110 degree carries out drying and processing.
Concrete principle of the present utility model is as follows: the mist passing into argon gas and oxygen in insulated tube 3, start radio frequency output device and to the certain radio-frequency power of metallic cathode body 4 feed-in, dielectric barrier discharge is there is near metallic cathode body 4 in insulated tube 3, plasma is formed in plasma excitation region, plasma plume brightness is along with air-flow is from the ejection of insulated tube 3 inside, define and include electronics, ion, oxygen atom free radical, the plasma jet of ozone and ultraviolet isoreactivity material, with radio-frequency power, air-flow and electrode material are correlated with, plumage brightness length is the longest reaches 40mm.
Polysilicon chip is placed in below produced plasma jet, or plasma jet is applied to polysilicon region by hand-held device, namely by deep oxidation after the active oxygen atom in polysilicon surface and plasma and ozone molecule interact.If by the fingerprint region on plasma jet zone of action polysilicon chip surface, the pollutant generation chemical reaction of the active group in pdp body and ultraviolet and fingerprint region, some organic long-chains or weak bond are effectively interrupted or oxidation Decomposition, and some residual inorganic impurities can use weak acid or weak lye short rinse to fall.
The utility model can enter silicon chip surface by the sodium ion in barrier encapsulation glass, thus prevent sodium ion from causing a large amount of compounds of charge carrier in battery component in the defective bit that the accumulation on crystal silicon surface causes crystal silicon surface micrometre-grade, the power stage of battery component is caused to reduce, meanwhile, also in order to eliminate the pollutants such as the fingerprint on cell piece surface.
Here insulated tube 3 selects quartz insulator pipe, for dielectric barrier discharge effect.
The utility model can select multiple different radio-frequency power supply frequency, and frequency range can be selected between 1.2MHz-13.56MHz.Radio-frequency power supply discharge power is between 10W-200W.
Cathode body electrode adopts thickness to be the tungsten filament of 1-4mm, the discharge end of electrode adopts pyramidal fashion, cone angle radius of curvature is 0.5mm-3mm, cone point indentation grounding ports is about 3mm-10mm, internal diameter thickness is that insulated tube 3 medium of 6mm is given prominence to grounding ports and is about 3mm-10mm, and plasma jet device can adopt hand-held or stationary nozzle mode down.
The excited gas adopted in such scheme can be the mist of helium or argon gas and oxygen, and it is even more that gas flow changes to 20SLM according to experimental conditions from 1SLM, and the flow of oxygen is less than 0.5% of total gas couette.
Oxygen is electronegative gas, in the plasma easily via the electron collision generation dissociation with high energy, produce certain density negative oxygen ion, therefore, mix the oxygen of too high amount, need higher radio frequency input just can excite generation plasma, from the present embodiment, under the condition maintaining lower-wattage, the flow passing into oxygen is unsuitable too high.
In addition, because the firing voltage of helium is lower, first can pass into helium and carry out (in advance) ignition discharge, more progressively add argon gas and oxygen, close helium, plasma jet is just transitioned into the discharge mode of argon gas and oxygen.
Below in conjunction with embodiment, explanation downwards is further done to the utility model.
In the utility model first embodiment, metal tungsten wire as metallic cathode body 4 is adjusted to the axle center of insulated tube 3, the place of needle point indentation metal anode body 6 end 5mm, insulated tube 3 gives prominence to the place of metal anode body 65mm, the discharge frequency of radio-frequency power supply is 2.0MHz, passing into argon gas stream flow is 10SLM, and the oxygen of the 20SCCM flow that wherein adulterates, discharge power is set in 70W.With hand-held, plasma jet is being carried out two-dimentional rank scanning with the 156mm*156mm polysilicon chip surface of soaking in 4% hydrofluoric acid solution evenly, jet end-to-end distance is away from polysilicon surface 3mm, and the processing time amounts to about 1 minute.Polysilicon surface presents hydrophilic characteristic through contact angle test, and contact angle changes to from the contact angle of about 70 degree before treatment only has about 10 degree.Wettability change before and after process shows that polysilicon surface achieves deep oxidation.Get the polysilicon chip sample of 5 156mm*156mm, before any plasma treatment, simple chemical cleaning process has been carried out to polysilicon chip.Result shows, before process, the carrier lifetime of polysilicon chip has had 2-3 raising doubly.The test result of high-resolution transmission electron microscope also shows that the oxidation depth of polysilicon surface is at about 8nm.
In another embodiment of the present utility model, the metal tungsten wire as metallic cathode body 4 is adjusted to the axle center of insulated tube 3, and the geometrical relationship of tungsten tip, metal anode body 6 and insulated tube 3 is as above described in example.The discharge frequency of radio-frequency power supply is 13.56MHz, and passing into argon flow amount is 8SLM, and the oxygen of the 10SCCM flow that wherein adulterates, discharge power radio frequency is 100W.With hand-held, plasma jet is irradiated the finger-print region of polycrystalline silicon battery plate sample surfaces, the processing time is about 5-8 second.The cell piece sample processed is put into deionized water rinsing about 10 seconds.After taking-up, putting into temperature is the drying and processing that the baking oven of 110 degree carries out 5 minutes.Show from the observed result of metallomicroscope, fingerprint clearance rate reaches more than 80%, the remaining fingerprint trace rinsed with deionized water after process.The photoelectric conversion efficiency of the solar battery sheet after finger prints processing has no decline.
Above embodiment is only the utility model a kind of execution mode wherein, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the utility model the scope of the claims.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection range of the present utility model.Therefore, the protection range of the utility model patent should be as the criterion with claims.
Claims (5)
1. a plasma jet device, comprises the hollow shaft-like metal outer pipe body (2) of ground connection, it is characterized in that, also comprise:
-insulated tube (3), is arranged in the inner chamber of described outer tube body (2), the axis being parallel of its axis and described outer tube body (2);
-metallic cathode body (4), be arranged in the inner chamber of described insulated tube (3) and be connected with the radio-frequency (RF) output end of radio frequency output device, described cathode (4) is for rod-like structure and the axis being parallel of its axis and described insulated tube (3);
-metal anode body (6), be hollow rod-like structure, described anode bodies (6) its inner wall sleeve is located on the outer wall of described insulated tube (3), and its outer wall is clamped in described outer tube body (2) inwall;
-inlet channel (8), the inner space of itself and described insulated tube (3), the gas outlet of described inlet channel (8) is arranged on the outside of described fluidic device.
2. a kind of plasma jet device according to claim 1, it is characterized in that, also comprise interconnective first jockey (10) and the second jockey (12), one end of described cathode (4) is clamped on described first jockey (10), and the outer wall of described outer tube body (2) is clamped on described second jockey (12).
3. a kind of plasma jet device according to claim 2, it is characterized in that, the connected mode of described first jockey (10) and the second jockey (12) is Flange joint, and described cathode (4), outer tube body (2) are to feel relieved with the clamping mode of described first jockey (10), the second jockey (12) and clamp.
4. a kind of plasma jet device according to claim 3, is characterized in that, described cathode (4) is tungsten filament.
5. a plasma jet assembly, comprising:
Fluidic device as described in as wherein arbitrary in claim 1-4;
Be connected to the inlet duct on the inlet channel (8) of described fluidic device; And
Can to the radio-frequency power supply of feed-in radio-frequency power in the cathode of described fluidic device (4);
One or more the gas dispensing device in argon gas, oxygen can be sent in described inlet channel (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520131434.5U CN205017675U (en) | 2015-03-06 | 2015-03-06 | Plasma jet device and subassembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520131434.5U CN205017675U (en) | 2015-03-06 | 2015-03-06 | Plasma jet device and subassembly |
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| Publication Number | Publication Date |
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| CN205017675U true CN205017675U (en) | 2016-02-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520131434.5U Expired - Fee Related CN205017675U (en) | 2015-03-06 | 2015-03-06 | Plasma jet device and subassembly |
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| CN (1) | CN205017675U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104883806A (en) * | 2015-03-06 | 2015-09-02 | 苏州大学 | Plasma jet device and assembly, and crystalline silicon battery surface oxidation and decontamination method |
| CN106455281A (en) * | 2016-10-13 | 2017-02-22 | 上海交通大学 | Atmospheric pressure plasma jet device of integrated mask plate |
| CN106989390A (en) * | 2017-04-07 | 2017-07-28 | 西安交通大学 | A kind of Bunsen burner formula low temperature plasma assisted combustion device |
| CN112153797A (en) * | 2020-09-08 | 2020-12-29 | 华中科技大学 | Plasma jet device, plasma auxiliary heating cooking range and gas stove complete machine |
-
2015
- 2015-03-06 CN CN201520131434.5U patent/CN205017675U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104883806A (en) * | 2015-03-06 | 2015-09-02 | 苏州大学 | Plasma jet device and assembly, and crystalline silicon battery surface oxidation and decontamination method |
| CN104883806B (en) * | 2015-03-06 | 2018-09-25 | 苏州大学 | A kind of plasma jet device and component and a kind of method of crystal silicon battery surface oxidation and decontamination |
| CN106455281A (en) * | 2016-10-13 | 2017-02-22 | 上海交通大学 | Atmospheric pressure plasma jet device of integrated mask plate |
| CN106989390A (en) * | 2017-04-07 | 2017-07-28 | 西安交通大学 | A kind of Bunsen burner formula low temperature plasma assisted combustion device |
| CN106989390B (en) * | 2017-04-07 | 2019-05-24 | 西安交通大学 | A kind of Bunsen burner formula low temperature plasma assisted combustion device |
| CN112153797A (en) * | 2020-09-08 | 2020-12-29 | 华中科技大学 | Plasma jet device, plasma auxiliary heating cooking range and gas stove complete machine |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160203 Termination date: 20190306 |