CN1832168A - Multi-chip high power LED device - Google Patents

Multi-chip high power LED device Download PDF

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Publication number
CN1832168A
CN1832168A CNA2006100337947A CN200610033794A CN1832168A CN 1832168 A CN1832168 A CN 1832168A CN A2006100337947 A CNA2006100337947 A CN A2006100337947A CN 200610033794 A CN200610033794 A CN 200610033794A CN 1832168 A CN1832168 A CN 1832168A
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CN
China
Prior art keywords
thermistor
chip
series circuit
light
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006100337947A
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Chinese (zh)
Inventor
孙慧卿
范广涵
郭志友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China Normal University
Original Assignee
South China Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China Normal University filed Critical South China Normal University
Priority to CNA2006100337947A priority Critical patent/CN1832168A/en
Publication of CN1832168A publication Critical patent/CN1832168A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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Abstract

This invention relates to a multi-chip large power LED component, which is processed by making cup-shaped slots corresponding to the numbers of the chips on base boards of metals, ceramics or epoxy resin circuit, encapsulating multiple LED chips in the slots, in which, the chips are serial directly then serial to a thermistor to forma a serial circuit and the serial circuits are parallel to each other, which applies a serial way for single unit and multiple chips and a connection way in parallel, a thermistor is serial to one single unit to maintain equal voltage for the sets, when the temperature of the PN junction of the diode rises or falls, the thermistor changes toward the opposite direction along with the change of the temperature.

Description

Multi-chip high power LED device
Technical field
The invention belongs to technical field of semiconductors, relate to a kind of multi-chip high power LED device that on metal substrate or ceramic substrate or epoxy resin circuit substrate, encapsulates.
Background technology
The emission wavelength of light-emitting diode (LED) varies with temperature and changes about 0.2-0.3nm/ ℃, and spectral width also increases thereupon simultaneously, when electric current is tied through pn, makes the interface produce temperature rise, and luminous intensity can correspondingly reduce about 1%/1 ℃.Generally adopt the way that reduces its drive current to reduce junction temperature at present, the drive current of most LED is limited in about 20mA.But the light output meeting of LED increases with the increase of electric current, and at present, the drive current of a lot of power-type single-chip LED can reach 300mA～1A level, and its luminous intensity has also increased by tens times.Adopt multicore sheet encapsulation technology can reach the illumination effect of power-type single-chip LED fully, be subjected to Temperature Influence also smaller, Control current is also far below the former, and multi-chip LED has reasonable use prospect at present.At present the shortcoming that exists of large-power light-emitting diodes is: (1) single-chip power device has only several companies to make, and selling cost exceeds tens to hundred times, and this product also is unfavorable for a large amount of uses; (2) supply current of single-chip power device is big, so thermal effect is big, has a strong impact on luminescent properties; (3) technology also is not very ripe, is unfavorable for large-scale popularization and application; (4) existing multi-chip light emitting diode device does not have temperature-compensating, and each parallel circuits current imbalance is subjected to influence of temperature change easily, even causes chip to damage.
Summary of the invention
Purpose of the present invention is exactly to overcome the technical problem that exists in the above-mentioned prior art, a kind of cup-shaped groove corresponding with number of chips of making on substrate is provided, the multi-chip high power LED device that in cup-shaped groove, encapsulates respectively, adopt single group multicore sheet series connection form, and with the connected mode of single group in parallel connection.Identical for guaranteeing each group voltage and current, keep the voltage of each single group to equate at thermistor of each Dan Zuzhong series connection, when the PN junction temperature of diode raise or reduce, thermistor also changed toward opposite direction with the change of temperature, makes circuit voltage remain unchanged.
Multi-chip high power LED device of the present invention is a plurality of light-emitting diode chip for backlight unit of encapsulation on metal substrate or ceramic substrate or epoxy resin circuit substrate, a plurality of chips are directly connected, connect with thermistor, form series circuit, each series circuit is parallel with one another.
Connect by welding between the chip and between chip and the thermistor.
The chip electrode that is installed in the cup-shaped groove is welded on the flexible electrical pole plate by gold thread, thereby realizes being connected in series.
The circuit of device of the present invention can be formed resistance R t by 4 groups of series circuits 1～Rt 4Be thermistor, D 1～D 16Be light-emitting diode, thermistor Rt 1, light-emitting diode D 1～D 4Form first group of series circuit; Thermistor Rt 2, light-emitting diode D 5～D 8Form second group of series circuit; Thermistor Rt 3, light-emitting diode D 9～D 12Form the 3rd group of series circuit; Thermistor Rt 4, light-emitting diode D 13～D 16Form the 4th group of series circuit.
The present invention is owing to adopt single group series connection and many groups form in parallel on a substrate, compared with prior art, has temperature compensation function, guaranteed that a plurality of circuit voltages are equal substantially, prevented that the high power device cost that a plurality of common LED chip become is low because each series circuit because variations in temperature causes electric current too to increase, makes in the device each series circuit voltage or electric current keep balance, the luminous intensity height, perfect heat-dissipating.
Description of drawings
Fig. 1 is a multi-chip high power LED device structural representation of the present invention;
Among the figure, the 1st, flexible electrode circuit board, the 2nd, negative flexible electrode circuit board, the 3rd, the device negative electrode, the 4th, metal substrate or ceramic substrate or epoxy resin circuit substrate, the 5th, the plane that led chip is installed in the cup-shaped groove, the 6th, the cup-shaped groove of single LEDs chip is installed, the 7th, the negative pole of led chip, the 8th, led chip, the 9th, the positive pole of led chip, the 10th, the pad of welding compensating resistance, the 11st, the positive pole of device, the 12nd, compensation thermistor;
Fig. 2 is the board structure schematic diagram that single-chip is installed among Fig. 1;
Fig. 3 is the circuit theory diagrams of Fig. 1.
Embodiment
As shown in Figure 1, 2, adopt metal substrate, the cup-shaped groove 6 of installation and processing chip 8 on metal substrate 4 makes a led chip 8 is installed in each cup-shaped groove 6;
Add flexible electrical pole plate 1,2 on the plane of substrate, the chip electrode that is installed in the cup-shaped groove is welded on the flexible electrical pole plate by gold thread, and the chip of a series circuit is connected mutually;
Each Dan Zuzhong has many light-emitting diode series connection, connects with a thermistor 12 again, forms the series circuit of being made up of light-emitting diode and thermistor, and each series circuit is parallel with one another.
The circuit that forms is formed resistance R t by 4 groups of series circuits as shown in Figure 3 1～Rt 4Be thermistor, D 1～D 16Be light-emitting diode, thermistor Rt 1, light-emitting diode D 1～D 4Form first group of series circuit; Thermistor Rt 2, light-emitting diode D 5～D 8Form second group of series circuit; Thermistor Rt 3, light-emitting diode D 9～D 12Form the 3rd group of series circuit; Thermistor Rt 4, light-emitting diode D 13～D 16Form the 4th group of series circuit.
When the operating voltage of each series circuit equated, when the total supply power voltage of device equated substantially, inflow current was identical.
In series circuit, when temperature raise, the operating voltage of device also reduced thereupon, and the thermistor of the positive temperature coefficient of series connection this moment increases, and has compensated the voltage decrease of light-emitting diode, has guaranteed the change in voltage of this series circuit.
In each group series circuit, the high pairing thermistor of the junction voltage of many light-emitting diodes is little, otherwise opposite.
In each group series circuit, when many light-emitting diodes tube voltages were high, voltage was temperature variant big, and pairing series thermal-sensitive resistance is little, and the also little characteristics of compensating effect are arranged, otherwise opposite.
In LED device, the junction voltage and the thermistor of each series circuit compensate mutually, and the voltage that reaches each series circuit keeps poised state, has promptly realized the effect of temperature-compensating.
For the situation that the light-emitting diodes tube voltage raises and increases with temperature, the present invention is suitable for too, and just this becomes negative tempperature coefficient thermistor with compensating resistance.

Claims (4)

1, a kind of multi-chip high power LED device, it is characterized in that on metal substrate or ceramic substrate or epoxy resin circuit substrate, making the cup-shaped groove corresponding with number of chips, in cup-shaped groove, encapsulate a plurality of light-emitting diode chip for backlight unit respectively, a plurality of chips are directly connected, connect with thermistor again, form series circuit, each series circuit is parallel with one another.
2, multi-chip high power LED device according to claim 1 is characterized in that described series circuit forms resistance R t by 4 groups of series circuits 1～Rt 4Be thermistor, D 1～D 16Be light-emitting diode, thermistor Rt 1, light-emitting diode D 1～D 4Form first group of series circuit; Thermistor Rt 2, light-emitting diode D 5～D 8Form second group of series circuit; Thermistor Rt 3, light-emitting diode D 9～D 12Form the 3rd group of series circuit; Thermistor Rt 4, light-emitting diode D 13～D 16Form the 4th group of series circuit.
3, multi-chip high power LED device according to claim 1 and 2, it is characterized in that between the chip and chip and thermistor between connect by welding.
4, multi-chip high power LED device according to claim 3, the chip electrode that it is characterized in that being installed in the cup-shaped groove is welded on the flexible electrical pole plate by gold thread.
CNA2006100337947A 2006-02-23 2006-02-23 Multi-chip high power LED device Pending CN1832168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2006100337947A CN1832168A (en) 2006-02-23 2006-02-23 Multi-chip high power LED device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2006100337947A CN1832168A (en) 2006-02-23 2006-02-23 Multi-chip high power LED device

Publications (1)

Publication Number Publication Date
CN1832168A true CN1832168A (en) 2006-09-13

Family

ID=36994289

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006100337947A Pending CN1832168A (en) 2006-02-23 2006-02-23 Multi-chip high power LED device

Country Status (1)

Country Link
CN (1) CN1832168A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101261982B (en) * 2007-03-08 2010-06-16 探微科技股份有限公司 LED encapsulation structure and its making method
CN102338294A (en) * 2010-07-21 2012-02-01 江苏苏能光电科技有限责任公司 Integrated LED (Light-emitting Diode) light source suitable for alternating current direct driving
CN102595707A (en) * 2012-01-12 2012-07-18 郑州朗睿科技有限公司 Light-emitting diode (LED) signal light source capable of eliminating color drift
CN102818139A (en) * 2011-06-10 2012-12-12 弘凯光电股份有限公司 Light-emitting diode module and arrangement method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101261982B (en) * 2007-03-08 2010-06-16 探微科技股份有限公司 LED encapsulation structure and its making method
CN102338294A (en) * 2010-07-21 2012-02-01 江苏苏能光电科技有限责任公司 Integrated LED (Light-emitting Diode) light source suitable for alternating current direct driving
CN102818139A (en) * 2011-06-10 2012-12-12 弘凯光电股份有限公司 Light-emitting diode module and arrangement method thereof
CN102818139B (en) * 2011-06-10 2015-11-25 弘凯光电股份有限公司 Light-emitting diode (LED) module and method to set up thereof
CN102595707A (en) * 2012-01-12 2012-07-18 郑州朗睿科技有限公司 Light-emitting diode (LED) signal light source capable of eliminating color drift

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Open date: 20060913