CN1830852A - Mould and its preparation method - Google Patents

Mould and its preparation method Download PDF

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Publication number
CN1830852A
CN1830852A CN 200510033606 CN200510033606A CN1830852A CN 1830852 A CN1830852 A CN 1830852A CN 200510033606 CN200510033606 CN 200510033606 CN 200510033606 A CN200510033606 A CN 200510033606A CN 1830852 A CN1830852 A CN 1830852A
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CN
China
Prior art keywords
mould
layer
die matrix
preparation
surfaceness
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Pending
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CN 200510033606
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Chinese (zh)
Inventor
颜士杰
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CN 200510033606 priority Critical patent/CN1830852A/en
Publication of CN1830852A publication Critical patent/CN1830852A/en
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Abstract

A die is composed of a basic body with a press surface, an adhesive layer, a diffusion isolating layer, and a rough pseudo-diamond film layer. Its advantages are low cost, long service life and high parting performance.

Description

Mould and its preparation method
[technical field]
The present invention relates to a kind of mould, particularly a kind of mould and its preparation method with protective layer.
[background technology]
Mould is widely used in the compression molding processing procedure, particularly make the opticglass product, as aspheric surface glass lens, globe lens, prism etc., adopt direct compression molding (Direct Press-molding) but technology direct production opticglass product, need not subsequent process steps such as polishing, polishing, can enhance productivity greatly and output, and good product quality.But directly compression molding method is had relatively high expectations for the chemical stability of mould, thermal shock resistance, physical strength, surface flatness etc.Therefore, in fact the development of compression molding technology depends primarily on the progress of moulding stock and technology of die manufacturing.Mould for compression molding generally has following requirement:
(1) when high temperature, has favorable rigidity, anti-mechanical impact strength and hardness;
(2) do not cracking with rapid heating refrigerative thermal shocking bed die repeatedly and be out of shape;
(3) chemical reaction does not take place in molding surface and opticglass when high temperature, does not adhere to glass;
(4) high temperature oxidation does not take place;
(5) good processability easily is processed into the profile of high precision and high surface finish;
(6) cost is low.
Traditional moulds adopts stainless steel or refractory alloy as moulding stock mostly, and high temperature oxidation takes place this mould easily, under thermal shocking effect repeatedly, grain growth can take place, thereby glass is cohered in the die surface roughen.
For addressing the above problem, nonmetal and superhard alloy is used to mould.According to reports, silicon carbide (SiC), silicon nitride (Si3N4), titanium carbide (TiC), wolfram varbide (WC) and tungsten-cobalt carbide alloy have been used to mfg. moulding die.Yet above-mentioned various carbide ceramics hardness are very high, are difficult to be processed into needed profile, particularly high precision aspheric surface shape.And superhard alloy uses the back of for some time also high temperature oxidation may take place except that being difficult to processing.
Therefore, be mold base with carbide or superhard alloy, the composite structure mould that its surface is formed with other material coating or coating becomes new developing direction.Exemplary complex structure mold such as United States Patent (USP) the 4th, 685, No. 948 and the 5th, 202, No. 156.
United States Patent (USP) the 4th, 685, No. 948 a kind of composite structure moulds that are used for direct compression molding opticglass product of announcement.It adopts high-intensity superhard alloy, carbide ceramics or sintering metal as mold base; and be formed with iridium (Ir) protective layer in the mold pressing surface of mould; or the alloy protecting layer of iridium (Ir) and platinum (Pt), rhenium (Re), osmium (Os), rhodium (Rh) or ruthenium (Ru); or ruthenium (Ru) protective layer, or the alloy protecting layer of ruthenium (Ru) and platinum (Pt), rhenium (Re), osmium (Os), rhodium (Rh).
United States Patent (USP) the 5th, 202 discloses the method that a kind of preparation is used for the composite structure mould of opticglass product No. 156.It adopts high-intensity superhard alloy, carbide ceramics or sintering metal as mold base, and forms one deck diamond-film-like (DLC, Diamond Like Carbon) protective layer in the mold pressing surface of mould.
Though playing, the protective layer of above-mentioned composite structure mould prevents from mold base and is formed adherent phenomenon takes place between body, and the oxygen effect in the surrounding gas and make the effect of the mis-behave of die matrix when preventing to be shaped.But, need elder generation to grind when making this protective layer and then plate protective layer again at die matrix, if make demoulding easy, then the surface that contacts with the desire molded product need have suitable surfaceness (about 0.2~1.2 μ m).Since the too low demoulding that then is difficult for of roughness, the too high shape that then can influence the molding design of roughness.In order to make protective layer reach this roughness scope; therefore roughness scope so far also need be ground in the die matrix surface; yet; the roughness of this grade need the bigger abrasive tool of the number of use number; its result can make the mold base top layer produce an affected layer, and this mould strength and weather resistance are all declined to a great extent.
As shown in Figure 1, on July 3rd, 2002, the application of disclosed No. 01139835.3 China's Mainland disclosed a kind of mould 10, and the profiled surface of the matrix 11 of this mould forms the middle layer 12 that a thickness is 2~5 μ m, and this middle layer 12 is platinum-iridium alloy layer; At this middle layer 12 surface coverage, one platinum film 13, the surfaceness that this platinum film 13 contacts with molding is bigger than the surfaceness of die matrix 11.And the surfaceness of this platinum film 13 is 0.2~1.2 μ m.But platinum film and platinum-iridium alloy cost that this mould uses are too high.
In view of this, providing a kind of can reduce cost, and has the mould of good demoulding and long service life and its preparation method is real in necessary.
[summary of the invention]
Below, will a kind of can reducing cost be described with some embodiment, and have the mould of good demoulding and long service life.
And a kind of can reducing cost is described, and has the preparation method of the mould of good demoulding and long service life by these embodiment.
For realizing foregoing, a kind of mould is provided, it comprises:
Die matrix, its have one with desire the corresponding mold pressing surface of molded product;
One is formed at the adhesion layer of this mold pressing surface;
One is formed at the diffusion barrier of this adhesion layer; With
One is formed at the quasi-diamond layer of this diffusion barrier, and the surfaceness on the top layer of such diamond layer is bigger than die matrix surfaceness.
Wherein, the surfaceness on the top layer of such diamond layer is 0.2~1.2 μ m.
And, a kind of preparation method of mould is provided, its step comprises:
One die matrix is provided, grinds the mold pressing surface of this die matrix;
Clean the die matrix after grinding;
Form the mold pressing surface of an adhesion layer in this die matrix;
Form a diffusion barrier in this adhesion layer surface;
Form a quasi-diamond layer in the diffusion barrier surface;
Make the surfaceness on top layer of such diamond layer bigger than die matrix surfaceness.
Compare with prior art, the mould of the technical program adopts multilayer middle layer and quasi-diamond layer structure to replace the noble metal film structure, plays the effect that reduces cost.In addition, this mould is because the surfaceness on the top layer of quasi-diamond greater than this die matrix surfaceness, makes the surfaceness on the top layer of quasi-diamond remain in the scope of the most suitable demoulding (0.2~1.2 μ m); And the surfaceness on this die matrix surface is less than 0.05 μ m, adds can not produce serious affected layer man-hour, and makes this mould have long work-ing life.So, the advantage that the mould of the technical program has good demoulding, long service life, reduces cost.
[description of drawings]
Fig. 1 is the mold sections structural representation of No. 01139835.3 Chinese patent application of prior art.
Fig. 2 is the mold sections structural representation of the technical program.
Fig. 3 is preparation method's step synoptic diagram of the mould of the technical program.
Fig. 4 is the sputtering equipment structural representation that the technical program adopts.
[embodiment]
The present invention is described in further detail below in conjunction with drawings and Examples.
See also Fig. 2, the mould 20 of first embodiment of the invention comprises: die matrix 21, its have one with desire the corresponding mold pressing surface of molded product; One is formed at the adhesion layer 22 of this mold pressing surface; One is formed at the diffusion barrier 23 of this adhesion layer 22; With a quasi-diamond layer 24 that is formed at this diffusion barrier 23, the surfaceness on the top layer of such diamond layer 24 is bigger than die matrix 21 surfacenesses.Die matrix 21 is made for wolfram varbide in the present embodiment, and adhesion layer 22 is a titanium coating, and diffusion barrier 23 is a titanium nitride layer.
The mold pressing surface surfaceness of the die matrix of present embodiment is that the mold pressing surface of this roughness seldom forms bigger affected layer below the 0.05 μ m, and can combine with the titanium adhesion layer is fine and close, so can prolong the work-ing life of mould.Quasi-diamond layer 24 has higher hardness value and lower frictional coefficient, can satisfy the requirement of mould to material.And the surfaceness on the top layer of such diamond layer 24 is about 0.2~1.2 μ m.The mould that top layer has this roughness scope has better performance, if this roughness less than 0.2 μ m, then desires molded product and be difficult for demoulding, if this roughness is greater than 1.2 μ m, then the shape of molded product design is desired in influence easily.
The thickness range of the adhesion layer 22 of present embodiment is 0.05~0.1 μ m; The thickness range of this diffusion barrier 23 is 0.05~0.1 μ m; The thickness range of such diamond layer is 0.5~3 μ m.This adhesion layer 22 is mainly used in the tack that increases between diffusion barrier 23, quasi-diamond layer 24 and the die matrix 21.This diffusion barrier 23 is used to prevent that the quasi-diamond layer 24 of active atomic and follow-up sputter from producing reaction, and influences quasi-diamond layer 24 performance.
See also Fig. 3 and Fig. 4, second embodiment of the invention provides the preparation method of this mould 20, and it may further comprise the steps:
Step 100 provides a die matrix 21, the mold pressing surface of grinding this die matrix 21.Can adopt the abrasive tool of more small size number that this mold pressing surface is ground to the following surfaceness of 0.05 μ m.
Step 200 is cleaned the die matrix 21 after grinding.At first need the die matrix 21 after grinding is done basic cleaning: put into acetone soln and cleaned 20 minutes, put into ethanolic soln again and cleaned 10 minutes with the ultrasound concussion with the ultrasound concussion; Then, adopt the nitrogen gun spray to do this die matrix 21; Then this die matrix 21 is put in the vacuum cavity 41 of magnetic control sputtering plating machine 40 and carried out sputter clean.
As shown in Figure 4, die matrix 21 is placed these vacuum cavity 41 inner matching networks 45 that also pass through link to each other with injection frequency power 46; This vacuum cavity 41 forms rough vacuum by mechanical pump 42 earlier, opens high vacuum valve 43 then, and makes the base pressure of vacuum cavity 41 less than 10 by turbo-pump 44 -5Torr.Feed argon gas and nitrogen respectively by first flow controller 47, second flow director 48, make vacuum cavity 41 pressure reach 2~7 * 10 -3Torr; Negative electrode 49 is linked to each other with direct supply 51, make between die matrix 21 and the negative electrode 49 and form electric field; Form plasma zone 52 between die matrix 21 and negative electrode 49, positive ion that ionization produces and electronics bombard the mold pressing surface of die matrix 21 at a high speed and reach the purpose of cleaning die matrix 21.The bias voltage of this die matrix 21 is 300V in this sputter clean step, and the sputter clean time need keep more than 10 minutes.
Step 300 forms an adhesion layer 22 in the mold pressing surface of this die matrix 21.Present embodiment deposits this adhesion layer 22 by the bias voltage reactive sputtering.
As shown in Figure 4, the die matrix 21 that has cleaned is placed these vacuum cavity 41 inner matching networks 45 that also pass through link to each other with injection frequency power 46; One titanium metal target (figure does not show) is arranged at negative electrode 49 tops, and links to each other with direct supply 51 by this negative electrode 49.This vacuum cavity 41 forms rough vacuum by mechanical pump 42 earlier, opens high vacuum valve 43 then, and makes the base pressure of vacuum cavity 41 less than 10 by turbo-pump 44 -5Torr; Feed argon gas by first flow controller 47, make vacuum cavity 41 pressure reach 2~7 * 10 -3Torr; Make between die matrix 21 and the titanium metal target and form electric field, between die matrix 21 and titanium metal target, form plasma zone 52, positive ion and electronics that ionization produces bombard the titanium metal target at a high speed, atom or molecule on this target are sputtered out, and formation one layer thickness is the titanium adhesion layer 22 in 0.05~0.1 mu m range on die matrix 21.The die matrix 21 bias voltage scopes that this step is provided with are-20V~-60V.
Step 400 forms one deck diffusion barrier 23 in these adhesion layer 22 surfaces.This step 400 is roughly the same with step 300, different be in: feed argon gas and nitrogen simultaneously by first flow controller 47, second flow director 48.Can form layer thicknesses in titanium adhesion layer 22 surface by this step is titanium nitride diffusion barrier 23 in 0.05~0.1 mu m range.
Step 500 forms one deck quasi-diamond layer 24 in these diffusion barrier 23 surfaces.Pure graphite rod target is displaced the titanium metal target, feed methane (CH by first flow controller 47 4) gas, make vacuum cavity 41 pressure reach 3~20 * 10 -3Torr.The die matrix 21 bias voltage scopes that this step is provided with are-50V~-150V.Can form layer thicknesses in titanium nitride diffusion barrier 23 surface by this step is quasi-diamond layer 24 in 0.5~3 mu m range.
Step 600 is put into heating installation (figure do not show) with the mould 20 that has deposited such diamond layer 24 and is heated and make the surfaceness on such adamantine top layer reach 0.2~1.2 μ m.In this heating installation this mould 20 being heated to 200~300 spends, feed argon gas and nitrogen simultaneously, and keeping this temperature 0.5~2 hour, the purpose of this step is to make the grain growing of quasi-diamond layer and make the most surperficial surfaceness of quasi-diamond layer that contacts with molding reach 0.2~1.2 required μ m.
Be understandable that the die matrix of the technical program also can adopt material manufacturings such as stainless steel or silicon carbide except that Wimet such as wolfram varbide; Adhesion layer can also adopt metallic substance manufacturings such as chromium except that adopting titanium metal.The mould preparation method of the technical program is except that by adopting chemical Vapor deposition process deposition of adhesion, diffusion barrier and quasi-diamond layer the sputtering method, wherein sputtering method comprises bias voltage reactive sputtering, radio-frequency sputtering and cosputtering.
The mould of the technical program adopts multilayer middle layer and quasi-diamond layer structure to replace the noble metal film structure, plays the effect that reduces cost.In addition, this mould is because the surfaceness on the top layer of quasi-diamond greater than this die matrix surfaceness, makes the surfaceness on the top layer of quasi-diamond remain in the scope of the most suitable demoulding (0.2~1.2 μ m); And the surfaceness on this die matrix surface is less than 0.05 μ m, adds can not produce serious affected layer man-hour, and makes this mould have long work-ing life.So, the advantage that the mould of the technical program has good demoulding, long service life, reduces cost.
In addition, those skilled in the art also can do other variations in spirit of the present invention, certainly, the variation that these are done according to spirit of the present invention, all should be included in the present invention's scope required for protection in.

Claims (16)

1. mould, it comprises:
Die matrix, its have one with desire the corresponding mold pressing surface of molded product;
One is formed at the adhesion layer of this mold pressing surface;
One is formed at the diffusion barrier of this adhesion layer; With
One is formed at the quasi-diamond layer of this diffusion barrier, it is characterized in that the surfaceness on top layer of such diamond layer is bigger than die matrix surfaceness.
2. mould as claimed in claim 1 is characterized in that this die matrix is that wolfram varbide, silicon carbide or stainless steel constitute.
3. mould as claimed in claim 1 is characterized in that this adhesion layer comprises titanium or chromium metal.
4. mould as claimed in claim 1 is characterized in that this diffusion barrier is that titanium nitride constitutes.
5. mould as claimed in claim 1 is characterized in that this adhesion layer thickness range is 0.05~0.1 μ m.
6. mould as claimed in claim 1 is characterized in that this diffusion barrier thickness range is 0.05~0.1 μ m.
7. mould as claimed in claim 1 is characterized in that such diamond layer thickness scope is 0.5~3 μ m.
8. mould as claimed in claim 1, the mold pressing surface surfaceness that it is characterized in that this die matrix is less than 0.05 μ m.
9. mould as claimed in claim 1 is characterized in that the surfaceness on the top layer of such diamond layer is 0.2~1.2 μ m.
10. the preparation method of a mould, its step comprises:
One die matrix is provided, grinds the mold pressing surface of this die matrix;
Clean the die matrix after grinding;
Form the mold pressing surface of an adhesion layer in this die matrix;
Form a diffusion barrier in this adhesion layer surface;
Form a quasi-diamond layer in the diffusion barrier surface;
Make the surfaceness on top layer of such diamond layer bigger than die matrix surfaceness.
11. preparation method as claimed in claim 10 is characterized in that cleaning die matrix step after the grinding and comprises that the ultrasound concussion cleans and sputter clean.
12. preparation method preparation method as claimed in claim 10, it is characterized in that forming adhesion layer, diffusion barrier and quasi-diamond layer is to adopt sputtering method or chemical Vapor deposition process.
13. preparation method preparation method as claimed in claim 12 is characterized in that sputtering method comprises bias voltage reactive sputtering, radio-frequency sputtering and cosputtering.
14. preparation method preparation method as claimed in claim 10, it is characterized in that making the surfaceness on the top layer of such diamond layer is greatly by heating the mould behind this formation quasi-diamond layer than die matrix surfaceness.
15. preparation method preparation method as claimed in claim 14 is characterized in that the Heating temperature scope is 200~300 degree, and needs to keep this temperature 0.5~2 hour.
16. preparation method preparation method as claimed in claim 14 is characterized in that heating feeds argon gas and nitrogen simultaneously.
CN 200510033606 2005-03-10 2005-03-10 Mould and its preparation method Pending CN1830852A (en)

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CN 200510033606 CN1830852A (en) 2005-03-10 2005-03-10 Mould and its preparation method

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Application Number Priority Date Filing Date Title
CN 200510033606 CN1830852A (en) 2005-03-10 2005-03-10 Mould and its preparation method

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CN1830852A true CN1830852A (en) 2006-09-13

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114589819A (en) * 2020-12-07 2022-06-07 Oppo广东移动通信有限公司 Hot bending die and preparation method thereof, curved ceramic part and electronic equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114589819A (en) * 2020-12-07 2022-06-07 Oppo广东移动通信有限公司 Hot bending die and preparation method thereof, curved ceramic part and electronic equipment

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Open date: 20060913