CN1819128A - Method for manufacturing substrate with emergent points - Google Patents
Method for manufacturing substrate with emergent points Download PDFInfo
- Publication number
- CN1819128A CN1819128A CNA2005100894452A CN200510089445A CN1819128A CN 1819128 A CN1819128 A CN 1819128A CN A2005100894452 A CNA2005100894452 A CN A2005100894452A CN 200510089445 A CN200510089445 A CN 200510089445A CN 1819128 A CN1819128 A CN 1819128A
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- Prior art keywords
- conductive foil
- substrate
- prominent point
- prominent
- hole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Wire Bonding (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
To provide a manufacturing method for a substrate with a bump capable of forming the high bump and capable of easily controlling the height of the bump. The substrate is prepared in which a first conductive foil 12 is stuck on a top face first and a second conductive foil 13 is stuck on an underside, and a through-hole 14 is formed. The first conductive foil 12 and the second conductive foil 13 are connected electrically through the through-hole 14, and the through-hole 14 is filled with fillers 16. A conductive path extending from a bump 18 is formed by forming the bump 18 by etching the first conductive foil 12, and etching the first conductive foil 12 excepting a place where the bump 18 is formed. Accordingly, the height of the bump 18 can be controlled by controlling the thickness of the first conductive foil 12.
Description
Technical field
The present invention relates to form high prominent point, and can easily select the manufacture method of the substrate of the prominent point of prominent some band highly.
Background technology
The formation method of the prominent point of existing scolding tin is described with reference to Fig. 7.
At first,, on substrate 101, form first conductive pattern 102,, form circuitry substrate 100 by forming second conductive pattern 103 below with reference to Fig. 7 (A).
With reference to Fig. 7 (B), mounting semiconductor element 104 on first conductive pattern 102 uses metal fine 105 that first conductive pattern 102 and semiconductor element 104 are electrically connected.And, above sealing resin 106 seal substrate 101, to cover semiconductor element 104 and metal fine 105.
With reference to Fig. 7 (C), resist 107 is carried out composition, to expose the desirable position of second conductive pattern 103 on the surface of second conductive pattern 103.And mounting solder ball on second conductive pattern 103 that exposes from resist 107 by refluxing, forms the prominent point (with reference to patent documentation 1) of scolding tin.
Patent documentation 1: the spy opens the 2000-40764 communique
But, in the formation method of the prominent point 108 of above-mentioned scolding tin, have following such problem points.
Owing to form prominent point 108, can not select the height of prominent point 108 by scolding tin.In addition, be difficult to form more than or equal to 100 μ m by the height that scolding tin will be dashed forward a little.
In addition, because the mounting solder ball, and, form the prominent point 108 of scolding tin, so be difficult to form accurately the height of prominent point by refluxing.
Owing to form prominent point,, can not install simultaneously with other circuit block in that use scolding tin welding paste on the substrate is installed by scolding tin.
Summary of the invention
The present invention constitutes in view of such problem, and main purpose of the present invention is to provide a kind of manufacture method with the prominent substrate of putting, and this prominent point has enough height.
The manufacture method of the substrate of the prominent point of band of the present invention has following feature, and it comprises: the operation of preparing substrate, be pasted with first conductive foil of the thickness of corresponding prominent some height above this substrate, and be pasted with second conductive foil of corresponding distribution thickness below this substrate; Form the operation of the through hole that connects substrate, first conductive foil and second conductive foil; In through hole, form through hole plating, first conductive foil and second conductive foil are electrically connected and fill the operation of packing material in through hole; By first conductive foil except that the zone that is formed with through hole is etched partially, form the operation of prominent point; By first conductive foil except that the zone that is formed with prominent point is carried out etching, form from the operation on the conduction road that prominent point extends; By second conductive foil is carried out etching, form the operation of distribution.
The manufacture method of the substrate of the prominent point of band of the present invention has following feature, by forming surface that covers first conductive foil and second conductive foil and the through hole plating that covers the through hole inwall, first conductive foil and second conductive foil is electrically connected.
The manufacture method of the substrate of the prominent point of band of the present invention has following feature, and through hole plating is material with first conductive foil with identical metal, by the while etching conducting film and first conductive foil, forms prominent point.
The manufacture method of the substrate of the prominent point of band of the present invention has following feature, by selecting the thickness of first conductive foil, selects the height of prominent point.
The manufacture method of the substrate of the prominent point of band of the present invention has following feature, is electrically connected between the prominent point that the conduction road is arranged branch.
The manufacture method of the substrate of the prominent point of band of the present invention has following feature, and packing material is an electric conducting material.
The manufacture method of the substrate of the prominent point of band of the present invention has following feature, and packing material is a resin.
According to the manufacture method of the substrate of the prominent point of band of the present invention, first conductive foil of the thickness by the corresponding prominent some height of etching forms prominent point.Therefore, the thickness that can pass through first conductive foil that adopted is selected the height of prominent point.Thus, can improve the precision of prominent some height.In addition, can easily form prominent point, for example can form highlyer dashing forward than the prominent point of existing scolding tin with height up to specification.
According to the manufacture method of the prominent substrate of putting of band of the present invention,, form prominent point by etching first conductive foil.Therefore, can improve the positional precision of prominent point, the prominent substrate of the band that the reliability that provides and install substrate side to be connected is high.In addition, the shape of point but arbitrary decision is dashed forward.
Manufacture method according to the substrate of the prominent point of band of the present invention etches partially first conductive foil, forms prominent point, in addition, is formed with first conductive foil outside the zone of prominent point by etching, forms the low conduction road of the prominent point of aspect ratio.Therefore, be electrically connected between the prominent point that can branch be arranged by the conduction road.Thus, the distribution that substrate side is installed is extended between prominent point.
Manufacture method according to the substrate of the prominent point of band of the present invention forms prominent point earlier, and is involutory and form other distribution with the position that is formed with prominent point.Therefore, the substrate of the high prominent point of band of prominent some positional precision can be provided.
According to the manufacture method of the prominent substrate of putting of band of the present invention, through hole plating covers the inwall of the top and through hole of first conductive foil, second conductive foil integratedly.Therefore, can carry out the electrical connection of first conductive foil and second conductive foil reliably.
According to the manufacture method of the prominent substrate of putting of band of the present invention, through hole plating is material with first conductive foil with identical metal.Therefore, owing to can use the identical etchant etching through hole plating and first conductive foil, so manufacturing process can be simplified.
Description of drawings
Fig. 1 (A)～(C) is the profile of manufacture method that is used to illustrate the substrate of the prominent point of band of the present invention;
Fig. 2 (A)～(C) is the profile of manufacture method that is used to illustrate the substrate of the prominent point of band of the present invention;
Fig. 3 (A), (B) are the profiles of manufacture method that is used to illustrate the substrate of the prominent point of band of the present invention;
Fig. 4 is the profile of manufacture method that is used to illustrate the substrate of the prominent point of band of the present invention;
Fig. 5 (A), (B) are top figure and the back views that is used to illustrate the manufacture method of circuitry substrate of the present invention;
Fig. 6 (A)～(C) is the profile of manufacture method that is used to illustrate the substrate of the prominent point of band of the present invention;
Fig. 7 (A)～(C) is the figure that is used to illustrate the manufacture method of existing circuitry substrate;
Symbol description
The substrate of the prominent point of 10 bands
11 substrates
12 first conductive foils
13 second conductive foils
14 through holes
15 conducting films
16 packing materials
18 prominent points
22 first conductive patterns
23 second conductive patterns
24 conduction overlay films
25 insulating coatings
26 conduction roads
28 electric partss
29 metal fines
Embodiment
The manufacture method of the circuitry substrate of the manner is described with reference to Fig. 1～Fig. 3.
At first, with reference to Fig. 1 (A), prepare to be pasted with first conductive foil 12 in the above, be pasted with the substrate 11 of second conductive foil 13 below.
As substrate 11, preferably use glass epoxide substrate or glass polyimide substrate, but according to circumstances, also can adopt fluorine substrate, glass PPO substrate or ceramic substrate etc.In addition, also can adopt flex plate, film etc.In the manner, adopt the glass epoxide substrate of thickness 200 μ m degree.
As first conductive foil 12 and second conductive foil 13, so long as can get final product by etched metal.In the manner, adopted the metal forming that constitutes by copper.And, on first conductive foil 12, adopted the Copper Foil of thickness 175 μ m degree.The height of the corresponding prominent point described later of this thickness decides.Can adopt the conductive foil of maximum 230 μ m degree thickness.Therefore, the height of prominent point can be selected, the height-precision of prominent point can be improved by the thickness of conductive foil.In addition, can easily form prominent point, for example can make prominent point form to such an extent that be higher than the prominent point of existing scolding tin with height up to specification.
Second conductive foil 13 uses the conductive foil of the thickness of corresponding distribution height.In the manner, the thickness of second conductive foil 13 is made as 18 μ m degree.The thickness of distribution can be by the circuit element that is mounted current capacity etc. and arbitrary decision.
With reference to Fig. 1 (B), form the through hole 14 that connects substrate 11, first conductive foil 12 and second conductive foil 13.At this, be formed with the through hole 14 of diameter 0.25mm degree.Through hole 14 can use the NC working equipment to form.
With reference to Fig. 1 (C), forming the through hole plating that covers the surperficial of first conductive foil 12 and second conductive foil 13 and cover through hole 14 inwalls is conducting film 15.Utilize conducting film 15 that first conducting film 12 and second conductive foil 13 are electrically connected.In the manner, conducting film 15 is the copper facing of thickness 20 μ m degree, forms by the electroless plating method of applying.But, also can be used in combination and form conducting film 15 by electrolysis plating method or electroless plating being applied method and electrolysis plating method.
With reference to Fig. 2 (A), fill through hole 14 by packing material 16.Packing material 16 can be filled by the mesh screen printing.As packing material 16,, promptly can carry out the electrical connection of first conductive pattern 12 and second conductive pattern 13 reliably, and can guarantee current capacity etc. if electric conducting materials such as use copper cream then have following advantage.But, in packing material 16, also can use resin etc.If use resin, then compare with copper cream etc., can easily fill through hole.By packing material 16, can make prominent surface described later equally smooth, can improve connection reliability with installed surface.
With reference to Fig. 2 (B), by etching partially, partly remove first conductive foil 12 and conducting film 15, form prominent point 18.Therefore, the part of first conductive foil 12 is residual certain thickness.In addition, in the manner,, prominently put 18 so can form by an etching because first conductive foil 12 and conducting film 15 be made of copper.In addition, prominent point 18 contains the zone that is formed with through hole 14.When forming by Wet-type etching, etchant mainly adopts frerrous chloride or stannous chloride.And, under the state that exposes from resist in the desirable position of conductive foil, in this etchant, flood, or utilize this etchant to spray.In this form, spray etchant, according to its time control etch depth.
Like this, form prominent point 18, can improve the positional precision of prominent point, provide and install prominent the high substrate of connection reliability of substrate side by etching.In addition, the shape of point but arbitrary decision is dashed forward.
With reference to Fig. 2 (C), formation lamination layer on prominent point 18, etching first conductive foil 12, make substrate 11 above expose.This etching is owing to the stage that needs only after substrate 11 exposes stops, so easily carry out etched control.And first conductive foil 12 is separated by electricity, forms first conductive pattern 22 with prominent point 18.At this, prominent point 18 contains the zone that is formed with through hole 14.In addition, on first conductive pattern 22, contain and prominent 18 integrally formed conduction road.18 electrical connections of prominent point that this conduction road is arranged branch.Therefore, the distribution that substrate side is installed is extended between prominent point.
With reference to Fig. 3 (A), at the surface patterning resist of second conductive foil 13, carry out etching by resist by being situated between, form second conductive pattern 23.Second conductive pattern 23 is the distributions that form on the face that circuit element etc. is installed, and also contains composition surface, bond pad etc.
Like this, owing to form prominent point earlier, overlap and form distribution and conduction road, so the substrate of the prominent point of band that improves the some positional precision of dashing forward can be provided with the position that is formed with the point of dashing forward.
With reference to Fig. 3 (B), above first conductive pattern 22 that utilizes conduction overlay film 24 to cover to comprise above the prominent point 18.Equally, above utilization conduction overlay film 24 coverings second conductive pattern 23.Conduction overlay film 24 forms for preventing the conductive pattern surface oxidation.This conduction overlay film 24 for example is gold-plated.Certainly, carry out the Ni plating as the ground connection plating after, also contain and be formed with gold-plated laminate etc.The thickness of conduction overlay film 24 is not particularly limited, but in the manner, forms the thickness of 20 μ m degree.
In addition, the electric parts of second conductive pattern 23 and the position of metal fine electrical connection etc. can not formed insulating coating 25 yet.This insulating coating 25 also can form in desirable position after forming conduction overlay film 24 on whole of second conductive pattern 24.As mentioned above, make the substrate 10 of the prominent point of band.
Describe prominent point 18 in detail with reference to Fig. 4 and Fig. 5.
The thickness of prominent point 18 at first, is described with reference to the Fig. 4 as near the enlarged drawing the prominent point 18.The thickness of the prominent point of saying here 18 is meant, with the thickness of thickness T 3 additions of the thickness T 2 of the thickness T 1 of the first conductive foil 12A, conducting film 15 and conduction overlay film 24.In the manner, as mentioned above, because T1 is 175 μ m, T2 is 20 μ m, and T3 is 20 μ m, so the height of prominent point is 215 μ m.Therefore, can will fully separate with the substrate 10 and the installation substrate of prominent point by the point 18 of dashing forward.For example, be very effective from the situation of the outstanding part that part is installed in all ends of the substrate 10 of prominent point etc. the time, at present need be from the outstanding electrode of substrate side, but can use the welding paste installation that refluxes.
Prominent point is highly controlled by the thickness T 1 of first conductive foil 12.Because conducting film 15 and conduction overlay film 24 form by carrying out plating, thick this thickness that must form to expend time in and cost.In addition, its thickness is also limited.If use the manufacture method of the substrate of the prominent point of the band of the manner, then can form the prominent point of height with maximum 250 μ m.
In addition, contain the conduction road 26 that is electrically connected between a plurality of prominent points being formed with by the first conductive foil 12B that etches partially slim formation.Therefore, 18 be installed in when installing on the substrate will dashing forward a little, can make and substrate wiring is installed in 18 extensions of prominent point.In the manner, the thickness T 4 of second conductive pattern forms 35 μ m～45 μ m degree.
The prominent some formation face of the substrate of the prominent point of Fig. 5 (A) expression band, the circuit component installed surface of the substrate 10 of the prominent point of Fig. 5 (B) expression band.Among Fig. 1～Fig. 4, the profile of the X-X ' line of presentation graphs 5 (A) describes.
With reference to Fig. 5 (A), will a dash forward 18A and prominent some 18B of conduction road 26 is electrically connected.At this, conduction overlay film and the conducting film that is formed at second conductive pattern, 22 surfaces omitted diagram.In the manner, through hole is located at the position that is formed at prominent point 18, and each prominent point 18 has the transmission action of electric signals, but also can be formed for the prominent point of puppet etc. of the prominent point of stable support substrate 10.In addition, can directly not be electrically connected with second conductive pattern 22 yet, but be electrically connected, thus, can form the prominent point that carries out electrical communication by the prominent point 18 of conduction road 26 and other by through hole 14.That is,, can easily design the allocation position of prominent point 18 by forming conduction road 26.And, owing to can form multilayer wired substrate, so can be with the circuitry substrate miniaturization.
With reference to Fig. 5 (B), electric parts 28 is installed on second conductive pattern 23.Electric parts 28A is semiconductor elements such as transistor, diode, IC.Also can use metal fine 29 to be electrically connected.Electric parts 28B is circuit elements such as pellet resistance.And, seal by using resin or housing, make it cover circuit component 28, can form semiconductor device.
With reference to Fig. 6, the manufacture method of prominent some substrate 10 of alternate manner is described.At this, with above-mentioned manufacture method difference be that the center describes.In the manufacture method of prominent some substrate 10 of the manner, on first conductive pattern 22, do not connect prominent point 18, and can form the conduction road 26 of the thickness thinner than prominent point 18.
At first,, in through hole 14A, fill packing material 16A, in through hole 14B, fill packing material 16B with reference to Fig. 6 (A).Through hole 14A and through hole 14B form simultaneously by above-mentioned method.Through hole 14A is located at the fixed position of giving that is formed with prominent point 18, and through hole 14B is located at the position that is formed with distribution.Packing material 16A is an above-mentioned material, but packing material 16B uses gypsum.But packing material 16B is not subjected to the influence of etching solution, as long as and the material that can remove by the solvent that does not give conductive foil influence.
With reference to Fig. 6 (B), etch partially first conductive foil 12 and conducting film 15, by first conductive foil 12 being formed the thickness of regulation, form prominent point 18.At this moment, be filled in the outstanding structure of packing material 16B formation column of through hole 14B.
With reference to Fig. 6 (C),, form first conductive pattern 22 and second conductive pattern 23 by etching first conductive foil 12 and second conductive foil 13.And utilizing concentration for example is that the alkaline solutions such as caustic soda of 4% degree are removed packing material 16B.That is, packing material 16B is used to protect the etching of using by the formation conductive pattern to be formed at the conducting film 15 of through hole 14 inwalls.And, also can after removing packing material 16B, utilize packing material 16A to fill through hole 14B.Like this, form the conduction road 26 of prominent 18 thin thickness of ratio.By this conduction road 26, can be on substrate 11 and below complexity and form wiring layer to high-density.
In addition, can through hole 14 be set yet, and form prominent point 18 in the part of extending from conduction road 26 in the zone that is formed with prominent point 18.
Claims (7)
1, a kind of manufacture method with the prominent substrate of putting is characterized in that, comprising: be pasted with second conductive foil corresponding with distribution thickness below the operation of preparing substrate, first conductive foil of highly corresponding thickness that is pasted with above this substrate and dashes forward, this substrate; Form the operation of the through hole that connects described substrate, described first conductive foil and described second conductive foil; In described through hole, form through hole plating, described first conductive foil and described second conductive foil are electrically connected, in described through hole, fill the operation of packing material; By described first conductive foil except that the zone that is formed with described through hole is etched partially, form the operation of described prominent point; By described first conductive foil except that the zone that is formed with described prominent point is carried out etching, form from the operation on the conduction road that described prominent point extends; By described second conductive foil of etching, form the operation of described distribution.
2, the manufacture method of the substrate of the prominent point of band as claimed in claim 1, it is characterized in that, by forming surface that covers described first conductive foil and described second conductive foil and the described through hole plating that covers described through hole inwall, described first conductive foil and described second conductive foil are electrically connected.
3, the manufacture method of the substrate of the prominent point of band as claimed in claim 2 is characterized in that described through hole plating is material with described first conductive foil with identical metal, by described conducting film of while etching and described first conductive foil, forms described prominent point.
4, the manufacture method of the substrate of the prominent point of band as claimed in claim 1 is characterized in that, by selecting the thickness of described first conductive foil, selects the height of described prominent point.
5, the manufacture method of the substrate of the prominent point of band as claimed in claim 1 is characterized in that, is electrically connected between the described prominent point that described conduction road is arranged branch.
6, the manufacture method of the substrate of the prominent point of band as claimed in claim 1 is characterized in that described packing material is an electric conducting material.
7, the manufacture method of the substrate of the prominent point of band as claimed in claim 1 is characterized in that described packing material is a resin.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005034434A JP3955086B2 (en) | 2005-02-10 | 2005-02-10 | Manufacturing method of substrate with bumps |
| JP034434/05 | 2005-02-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1819128A true CN1819128A (en) | 2006-08-16 |
| CN100521121C CN100521121C (en) | 2009-07-29 |
Family
ID=36919050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100894452A Expired - Fee Related CN100521121C (en) | 2005-02-10 | 2005-08-10 | Method for manufacturing substrate with emergent points |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3955086B2 (en) |
| KR (1) | KR101174912B1 (en) |
| CN (1) | CN100521121C (en) |
| TW (1) | TWI342730B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100752953B1 (en) * | 2006-08-23 | 2007-08-30 | 주식회사 유니테스트 | Method for manufacturing bump of probe card |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1027865A (en) | 1996-07-09 | 1998-01-27 | Mitsui Petrochem Ind Ltd | Semiconductor substrate |
| JP3716726B2 (en) | 2000-09-01 | 2005-11-16 | 日立エーアイシー株式会社 | Electronic component case and manufacturing method thereof |
-
2005
- 2005-02-10 JP JP2005034434A patent/JP3955086B2/en active Active
- 2005-07-13 TW TW094123677A patent/TWI342730B/en not_active IP Right Cessation
- 2005-08-09 KR KR1020050072638A patent/KR101174912B1/en not_active IP Right Cessation
- 2005-08-10 CN CNB2005100894452A patent/CN100521121C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060090739A (en) | 2006-08-16 |
| KR101174912B1 (en) | 2012-08-17 |
| JP3955086B2 (en) | 2007-08-08 |
| CN100521121C (en) | 2009-07-29 |
| TW200630001A (en) | 2006-08-16 |
| JP2006222275A (en) | 2006-08-24 |
| TWI342730B (en) | 2011-05-21 |
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