CN1813490A - Package structure of silicon capacitor microphone and fabrication method thereof - Google Patents
Package structure of silicon capacitor microphone and fabrication method thereof Download PDFInfo
- Publication number
- CN1813490A CN1813490A CNA200580000595XA CN200580000595A CN1813490A CN 1813490 A CN1813490 A CN 1813490A CN A200580000595X A CNA200580000595X A CN A200580000595XA CN 200580000595 A CN200580000595 A CN 200580000595A CN 1813490 A CN1813490 A CN 1813490A
- Authority
- CN
- China
- Prior art keywords
- condenser microphone
- silicon based
- substrate
- circuit unit
- based condenser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
The present invention relates to a packaging of a silicon condenser microphone and method for manufacturing the same. The packaging structure of a silicon condenser microphone of the present invention comprises a substrate having an upper surface for disposing the silicon condenser microphone and a circuit unit thereon, the substrate having a back chamber therein, the substrate including an air hole for an air to pass through between the upper surface for disposing the silicon condenser microphone and the back chamber; and a casing covering the silicon condenser microphone and the circuit unit disposed on the upper surface of the substrate for protection thereof. The method for manufacturing a packaging structure of a silicon condenser microphone of the present invention comprises steps of: (a) forming a substrate having a back chamber therein, wherein the substrate includes an air hole for an air to pass through between an upper surface of the substrate, the air hole disposed at a portion of the upper surface where the silicon condenser microphone and a circuit unit is to be disposed; (b) bonding the silicon condenser microphone and the circuit unit to the upper surface of the substrate; and (c) covering the silicon condenser microphone and the circuit unit with a casing to protect the silicon condenser microphone and the circuit unit.
Description
Technical field
The present invention relates to a kind of microphone, and relate in particular to the encapsulating structure (packaging structure) and the manufacture method thereof of silicon based condenser microphone.
Background technology
Usually, microphone is meant the transducer that is used for acoustic energy is converted to electric energy.As a kind of condenser microphone of microphone wherein is such microphone, and it adopts the wherein principle of two battery lead plate capacitors respect to one another.When one of them battery lead plate when the oscillating plate, this oscillating plate vibrates changing the electric capacity of capacitor according to sound, thereby charges accumulated is changed.Therefore, electric current flows according to the variation of sound.
In condenser microphone, electret capacitor microphone is known the most, and this electret capacitor microphone is characterised in that: use as the electret that comprises the material of semipermanent (semi-permanent) electric charge, replace bias voltage to form electrostatic field.By with the macromolecule membrane thermal or be attached to and form this electret on the conductive backings.
But macromolecule membrane is restricted in the latest tendency of size less than a nanometer of parts therein.In addition, because the electret that uses macromolecule membrane is to temperature or humidity sensitive, so characteristic may reduce, thereby makes the performance degradation of microphone itself.In addition, use the oscillating plate of macromolecule membrane too thick, make vibration characteristics deficiency and poor sensitivity.
Therefore, in order to improve these characteristics, the silicon microphone with improved temperature and vibration characteristics is discussed, this microphone allows to be embodied as batch processing in semiconductor fabrication process.U.S. Patent application No.US2002/0102004 discloses the microphone package of a kind of " small-sized silicon based condenser microphone and manufacture method thereof (Miniature Silicon Condenser Microphone And Method ForProducing Same) " by name.
Fig. 1 is the cutaway view that is illustrated in the encapsulating structure of disclosed silicon based condenser microphone among the U.S. Patent application No.US2002/0102004.
With reference to Fig. 1, silicon based condenser microphone 12 and circuit unit 16 are arranged in the substrate 14 with recessed zone 18.Silicon based condenser microphone 12 is arranged on the recessed zone 18.Be furnished with housing 20 to keep stability.In housing 20, be formed with opening 24, cover this opening with sealant 26 then.Acoustic pressure inwardly is sent to silicon based condenser microphone 12 by the gap between opening 24 and sealant 26.
Usually, in order to improve the sensitivity of microphone, need provide wherein oscillating plate to the environment of voice response sensitivity.For this reason, should be enough to make the pressure of rear chamber to be left in the basket as the size of the rear chamber in the space between backboard and substrate, even also be like this when vibration plate vibrates.
According to above-mentioned prior art, obtain rear chamber by forming recessed zone 18, to improve the sensitivity of microphone.But, make substrate 14 owing to be used as the FR-4 (fire-retardant synthetic 4) of epoxy resin usually, therefore in high-temperature heat treatment (for example, reflow treatment) process subsequently, the heat-resistant quality relatively poor owing to epoxy resin may be because distortion appears in heat.
In addition, because the substrate 14 that is made of epoxy resin is bigger with the coefficient of thermal expansion differences that is arranged between suprabasil silicon based condenser microphone 12 and the circuit unit 16, therefore in high-temperature heat treatment process, binding characteristic descends, thus the generation binding deficient.
In addition, owing to form recessed zone 18 by the substrate with given shape being carried out etching, so the size increase of rear chamber is subjected to the restriction that recessed regional size increases.
Summary of the invention
An object of the present invention is to provide the encapsulating structure and the manufacture method thereof of silicon based condenser microphone, the substrate that wherein is furnished with silicon based condenser microphone and circuit unit is made of heat resisting ceramic materials, this ceramic material has the thermal coefficient of expansion close with the thermal coefficient of expansion of silicon based condenser microphone and circuit unit, to prevent in high-temperature heat treatment process owing to heat causes being out of shape decline with binding characteristic.
According to embodiments of the invention, another object of the present invention provides the encapsulating structure and the manufacture method thereof of silicon based condenser microphone, wherein pass through to form substrate, thereby can change the space that shape also can be formed for rear chamber in many ways in conjunction with a plurality of chambers plate (chamber plate).
According to embodiments of the invention, another object of the present invention provides the encapsulating structure and the manufacture method thereof of silicon based condenser microphone, wherein forms pillar in rear chamber, to prevent that the chamber plate is owing to rear chamber subsides.
According to embodiments of the invention, another object of the present invention provides the encapsulating structure and the manufacture method thereof of silicon based condenser microphone, wherein on the surface (or top) of substrate, comprise a projection, spread to undesirable zone to prevent the binding agent or the retainer ring epoxy resins that are used for silicon bonded condenser microphone and circuit unit.
In order to realize above-mentioned purpose of the present invention, according to embodiments of the invention, a kind of encapsulating structure of silicon based condenser microphone is provided, this encapsulating structure comprises: substrate, it has a upper surface, is furnished with silicon based condenser microphone and circuit unit on this upper surface, and this substrate has rear chamber therein, this substrate comprises pore, is used for for air by being used to arrange between the upper surface and rear chamber of silicon based condenser microphone; And housing, its covering is arranged in silicon based condenser microphone and the circuit unit on the upper surface of substrate, is used for they are protected.
In order to realize above-mentioned purpose of the present invention, according to embodiments of the invention, a kind of method that is used to make the encapsulating structure of silicon based condenser microphone is provided, this method comprises the steps: that (a) forms a substrate, in this substrate, has rear chamber, wherein this substrate comprises pore, is used for between the upper surface and rear chamber of air by substrate, and this pore is arranged in the part place that waits to arrange silicon based condenser microphone and circuit unit of described upper surface; (b) described silicon based condenser microphone and circuit unit are attached on the upper surface of described substrate; And (c) cover described silicon based condenser microphone and circuit unit with a housing, to protect this silicon based condenser microphone and circuit unit.
As mentioned above, according to described silicon based condenser microphone and manufacture method thereof, the substrate that is furnished with silicon based condenser microphone and circuit unit is made of heat resisting ceramic materials, this ceramic material has the thermal coefficient of expansion close with the thermal coefficient of expansion of silicon based condenser microphone and circuit unit, to prevent in high-temperature heat treatment process owing to heat causes being out of shape decline with binding characteristic.Particularly, because ceramic material has high heat-resistant quality, therefore can reduce owing to treatment temperature increases the damage of product that causes.
In addition, by forming described substrate, thereby can change shape in many ways and can be formed for the space of rear chamber in conjunction with a plurality of chambers plate.Particularly, when the height of the part of being exposed by silicon based condenser microphone and circuit unit of described substrate increases along its marginal portion and inner space during as rear chamber, the size of rear chamber can maximize to improve the sensitivity of microphone.In addition, when the height of substrate was increased to the height of housing, described housing can be manufactured with flat structures, thereby reduced manufacturing cost.
According to the encapsulating structure and the manufacture method thereof of silicon based condenser microphone of the present invention, in rear chamber, form pillar to prevent that the chamber plate is owing to rear chamber subsides.Therefore, the space that is used for rear chamber is extended, has kept stability simultaneously.
Encapsulating structure and manufacture method thereof according to silicon based condenser microphone of the present invention, on the surface (or top) of substrate, comprise a projection, spread to undesirable zone to prevent the binding agent or the retainer ring epoxy resins that are used for silicon bonded condenser microphone and circuit unit.Therefore, can prevent because binding agent or epoxy resin spread to the contact portion of housing and substrate and cause contact deficiency between the contact surface of housing and substrate.
Though the present invention has been carried out concrete displaying and description with reference to the preferred embodiments of the present invention, but those skilled in the art should understand, under the situation that does not break away from the spirit and scope of the present invention that are defined by the following claims, can realize various changes in form and details.
Description of drawings
Fig. 1 is the cutaway view of the encapsulating structure of the traditional silicon based condenser microphone of expression;
Fig. 2 is the cutaway view of the structure of expression condenser microphone;
Fig. 3 is the cutaway view of expression according to the encapsulating structure of the silicon based condenser microphone of first embodiment of the invention;
Fig. 4 is the stereogram of substrate of decomposition of the encapsulating structure of presentation graphs 3;
Fig. 5 is the cutaway view of expression according to the encapsulating structure of the silicon based condenser microphone of second embodiment of the invention;
Fig. 6 is the stereogram of substrate of decomposition of the encapsulating structure of presentation graphs 5;
Fig. 7 is the cutaway view of expression according to the encapsulating structure of the silicon based condenser microphone of third embodiment of the invention;
Fig. 8 is the stereogram of substrate of decomposition of the encapsulating structure of presentation graphs 7.
Embodiment
Describe above-mentioned purpose of the present invention and other purpose, feature and advantage below with reference to accompanying drawings in detail.
Fig. 2 is the cutaway view of the structure of expression condenser microphone.
With reference to Fig. 2, packing ring 104 and oscillating plate 106 are stacked on first side of silicon chip 100, and the part of second side of this silicon chip is etched to form backboard 102.By stacked insulating film on silicon chip 100, and make this dielectric film form pattern (patterning) then and formation packing ring 104.Utilize conducting film to form oscillating plate 106 thereon.According to shown in structure, although oscillating plate 106 is arranged on the silicon chip 100, when oscillating plate 106 and backboard 102 toward each other and packing ring 104 between them time, oscillating plate 106 can exchange with the position of backboard 102.
Fig. 3 is the cutaway view of expression according to the encapsulating structure of the silicon based condenser microphone of first embodiment of the invention, and Fig. 4 is the stereogram of substrate of decomposition of the encapsulating structure of presentation graphs 3.
With reference to Fig. 3, be packaged with circuit unit 140 according to the silicon based condenser microphone 120 of said method manufacturing.Circuit unit 140 is by generating the signal of telecommunication because sound source causes oscillating plate 106 vibrations of silicon based condenser microphone 120.
According to the present invention, silicon based condenser microphone 120 and circuit unit 140 are arranged in the substrate 160 with rear chamber 174.Preferably, this substrate 160 is made of ceramic material.This ceramic material is heat-resisting, and because this ceramic material has and the silicon and the metal thermal coefficient of expansion about equally that constitute silicon based condenser microphone 120 and circuit unit 140, the problem that for example distortion in high-temperature heat treatment process or binding characteristic descend can not take place, so this ceramic material is favourable.
In substrate 160, form pore 172, thereby the extraneous air that flows in the silicon based condenser microphone 120 can flow into rear chamber 174.Therefore, preferably, silicon based condenser microphone 120 is arranged on the part that forms pore 172.
In addition, in the rear chamber 174 of substrate 160, form pillar 176.Rear chamber 174 is the hollow spaces between the upper surface of substrate 160 and its lower surface.Therefore, owing to there is such possibility, that is, therefore the upper surface of substrate 160 may form pillar 176 to guarantee stability owing to the undue impact from the outside is subsided in rear chamber 174.Preferably, pillar 176 is made of porous material, thereby pillar 176 has intensity and the elasticity that is enough to support ceramic material, and allows circulation of air freely.In addition, although only show a pillar 176, the quantity of pillar and position are variable.
Silicon based condenser microphone 120 and circuit unit 140 are attached in the substrate 160 by chips incorporate (die-bonding), and set up electrical connection by lead-in wire bonding (wire bonding) 190.Because the binding agent that uses in the chips incorporate process and be used to keep the epoxy resin of this combination to have less viscosity, so they may spread to undesirable zone.Therefore, can in substrate 160, form projection 180, spread to undesirable zone to prevent binding agent and epoxy resin.
After being arranged in silicon based condenser microphone 120 and circuit unit 140 in the substrate 160 as mentioned above, arrange housing 200.In housing 200, form opening 210, cover this opening 210 with sealant 220 then.Owing between opening 210 and sealant 220, have little gap, so outside sound source can be sent to inner silicon based condenser microphone 120.
According to the substrate 160 of as shown in Figure 4 decomposition, by forming substrate 160 in conjunction with the first Room plate 160a, the second Room plate 160b, the 3rd Room plate 160c.
The first Room plate 160a is as the lower surface of substrate 160.The second Room plate 160b comprises rear chamber 174 and pillar 176.The 3rd Room plate 160c constitutes the upper surface of substrate 160, and comprises the pore 172 that allows air to flow into rear chamber 174.On the 3rd Room plate 160c, be formed for preventing the projection 180 of binding agent or epoxy resin distribution.
Said structure illustrates with simple embodiment.Therefore, between the first Room plate to the, three Room plates, can be combined with extra chamber plate.
Fig. 5 is the cutaway view of expression according to the encapsulating structure of the silicon based condenser microphone of second embodiment of the invention, and Fig. 6 is the stereogram of substrate of decomposition of the encapsulating structure of presentation graphs 5.
Fig. 5 shows such situation, and wherein the size of rear chamber 174 is greater than the size of the rear chamber of the substrate shown in Fig. 3 160.
Except the part that is covered by silicon based condenser microphone 120 and circuit unit 140 of upper surface, substrate 160 ' height along substrate 160 ' the marginal portion of upper surface increase.The inner space is used as rear chamber 174 to enlarge rear chamber 174.As mentioned above, because increasing, the size of rear chamber can ignore the pressure in the rear chamber, thus the sensitivity that has improved microphone.
Though only the height of the marginal portion of upper surface increases in Fig. 5, the whole height of substrate can increase the structure of surrounding silicon based condenser microphone and circuit unit to have.
With reference to Fig. 6, in conjunction with a plurality of chamber plate 160a ' to 160e ' with form substrate 160 '.Similar with first embodiment, the first Room plate 160a ' formation lower surface, the second Room plate 160b ' comprises rear chamber 174 and pillar 176.
Opposite with first embodiment, the 3rd Room plate 160c ' also comprises along the rear chamber 174 of the lateral edge portions except the part that is covered by silicon based condenser microphone 120 and circuit unit 140.The rear chamber 174 of fourth ventricle plate 160d ' is attached on the 3rd Room plate 160c ' that aligns with the exceptional space of rear chamber 174.Then that the 5th Room plate 160e ' is disposed thereon to cover upper surface.
Fig. 7 is the cutaway view of expression according to the encapsulating structure of the silicon based condenser microphone of third embodiment of the invention, and Fig. 8 is the stereogram of substrate of decomposition of the encapsulating structure of presentation graphs 7.
Fig. 7 represents such structure, wherein can obtain than substrate 160 and 160 ' big rear chamber 174 of rear chamber.
Except the part that is covered by silicon based condenser microphone 120 and circuit unit 140, the marginal portion of the upper surface of substrate 160 " height along substrate 160 " increases the height up to the upper surface of housing 200.Because in this case, substrate 160 " the inner space as rear chamber 174, so rear chamber 174 can be maximized.In addition, because substrate 160 " height increase up to housing 200, so housing 200 can manufacture and have smooth structure, thus with its middle shell 200 have " ∩ " shape the situation simplified in comparison manufacture process.
In addition, the height of part that is furnished with circuit unit 140 is different with the height of the part that is furnished with silicon based condenser microphone 120, thereby the rear chamber 174 below silicon based condenser microphone 120 can be bigger.Though Fig. 7 shows such situation, the aspect ratio that wherein is furnished with the part of silicon based condenser microphone 120 is furnished with the height of the part of circuit unit 140 and wants high, and described height can freely change.
With reference to Fig. 8, show the substrate 160 " required a plurality of chamber plate 160a " that is used to form shown in Fig. 7 " to 160g.As mentioned above, by forming substrate 160 " in conjunction with a plurality of chamber plate 160a " to 160g ".Can also be between them in conjunction with extra chamber plate, and shape also can change.
Industrial applicibility
According to embodiments of the invention, the encapsulating structure and the manufacture method thereof of silicon based condenser microphone are provided, the substrate that wherein is furnished with silicon based condenser microphone and circuit unit is made of heat resisting ceramic materials, this ceramic material has the thermal coefficient of expansion close with the thermal coefficient of expansion of silicon based condenser microphone and circuit unit, to prevent in high-temperature heat treatment process owing to heat causes distortion and binding characteristic decline.
According to embodiments of the invention, the encapsulating structure and the manufacture method thereof of silicon based condenser microphone is provided, wherein by forming substrate, thereby can change shape in many ways and can be formed for the space of rear chamber in conjunction with a plurality of chambers plate.
According to embodiments of the invention, the encapsulating structure and the manufacture method thereof of silicon based condenser microphone is provided, wherein in rear chamber, form pillar to prevent that the chamber plate is owing to this rear chamber subsides.
According to embodiments of the invention, the encapsulating structure and the manufacture method thereof of silicon based condenser microphone are provided, on the surface (or top) of substrate, comprise a projection, spread to undesirable zone to prevent the binding agent or the retainer ring epoxy resins that are used for silicon bonded condenser microphone and circuit unit.
Claims (13)
1, a kind of encapsulating structure of silicon based condenser microphone, this encapsulating structure comprises:
Substrate, it has a upper surface, is furnished with silicon based condenser microphone and circuit unit on this upper surface, and this substrate has rear chamber therein, and this substrate comprises pore, is used for for air by being used to arrange between the upper surface and rear chamber of silicon based condenser microphone; With
Housing, its covering are arranged in silicon based condenser microphone and the circuit unit on the upper surface of described substrate, are used for they are protected.
2, encapsulating structure as claimed in claim 1 is characterized in that, described substrate is made of ceramic material.
3, as each described encapsulating structure in claim 1 and 2, it is characterized in that, in described rear chamber, be formed with the pillar of the upper surface that is used to support described substrate.
4, encapsulating structure as claimed in claim 3 is characterized in that, described pillar is made of porous material, and this material has the intensity and the elasticity of the upper surface that is used for support base, and circulation of air freely is provided.
5, as each described encapsulating structure in the claim 1 to 4, it is characterized in that, the upper surface of described substrate comprises a projection, is used to prevent to be used in conjunction with the binding agent of silicon based condenser microphone and circuit unit or is used for fixing silicon based condenser microphone and the maintenance compound of circuit unit flows out presumptive area.
6, as each described encapsulating structure in the claim 1 to 5, it is characterized in that, the aspect ratio of the described upper surface that is exposed by described silicon based condenser microphone and circuit unit wants high by the height of the described upper surface that described silicon based condenser microphone and circuit unit cover, and wherein the space below the part of exposing by silicon based condenser microphone and circuit unit as the part of rear chamber.
7, encapsulating structure as claimed in claim 6 is characterized in that, the height of the upper surface that exposes is equal to or higher than the top surface of described silicon based condenser microphone and circuit unit at least, and described housing has flat structures to cover described upper surface.
8, as each described encapsulating structure in the claim 1 to 7, it is characterized in that, the described upper surface that is used for arranging the substrate of described silicon based condenser microphone and circuit unit thereon comprises a step difference, thereby makes that the height of the part that is furnished with silicon based condenser microphone of described upper surface is different with the height of part that it is furnished with circuit unit.
9, encapsulating structure as claimed in claim 8 is characterized in that, its height that is furnished with the part of circuit unit of the aspect ratio of the part that is furnished with silicon based condenser microphone of described upper surface wants high.
10, a kind of method that is used to make the encapsulating structure of silicon based condenser microphone, this method comprises the steps:
(a) form a substrate, have rear chamber in this substrate, wherein this substrate comprises pore, is used for between the upper surface and rear chamber of air by substrate, and this pore is arranged in the part place that waits to arrange silicon based condenser microphone and circuit unit of described upper surface;
(b) described silicon based condenser microphone and circuit unit are attached on the upper surface of described substrate; And
(c) cover described silicon based condenser microphone and circuit unit with a housing, to protect this silicon based condenser microphone and circuit unit.
11, method as claimed in claim 10 is characterized in that, described step (a) comprising:
Preparation form the lower surface of described substrate the first Room plate, comprise the second Room plate of described rear chamber and comprise described pore and form the 3rd Room plate of described upper surface; And
The described first Room plate, the second Room plate and the 3rd Room plate are combined to form described substrate.
As each described method in claim 10 and 11, it is characterized in that 12, described step (a) also comprises: the pillar that in described rear chamber, is formed for supporting the upper surface of described substrate.
13, as each described method in the claim 10 to 12, it is characterized in that, described step (a) also comprises and forms a projection, is used to prevent to be used for flow out presumptive area in conjunction with the binding agent of described silicon based condenser microphone and circuit unit or the maintenance compound that is used for fixing described silicon based condenser microphone and circuit unit.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2005-0061363 | 2005-07-07 | ||
| KR1020050061363 | 2005-07-07 | ||
| KR1020050061363A KR100648398B1 (en) | 2005-07-07 | 2005-07-07 | Packaging structure of silicon condenser microphone and method for producing thereof |
| PCT/KR2005/002626 WO2007007929A1 (en) | 2005-07-07 | 2005-08-11 | Packaging structure of silicon condenser microphone and method for producing thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1813490A true CN1813490A (en) | 2006-08-02 |
| CN1813490B CN1813490B (en) | 2012-08-22 |
Family
ID=36845408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200580000595XA Expired - Fee Related CN1813490B (en) | 2005-07-07 | 2005-08-11 | Package structure of silicon capacitor microphone and fabrication method thereof |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100648398B1 (en) |
| CN (1) | CN1813490B (en) |
| WO (1) | WO2007007929A1 (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010048833A1 (en) * | 2008-10-28 | 2010-05-06 | 歌尔声学股份有限公司 | Silicon capacitor microphone |
| WO2011103720A1 (en) * | 2010-02-26 | 2011-09-01 | Ubotic Intellectual Property Co., Ltd. | Semiconductor package for mems device and method of manufacturing the same |
| CN102215448A (en) * | 2010-04-08 | 2011-10-12 | 北京卓锐微技术有限公司 | Silicon microphone packaging method capable of shielding electromagnetic interference, packaging body and electronic device |
| CN102318365A (en) * | 2009-02-13 | 2012-01-11 | 船井电机株式会社 | Microphone unit |
| CN101478710B (en) * | 2009-01-17 | 2012-10-17 | 歌尔声学股份有限公司 | Silicon capacitor microphone |
| CN103663352A (en) * | 2013-12-30 | 2014-03-26 | 上海集成电路研发中心有限公司 | MEMS microphone packaging structure and packaging method |
| US8742569B2 (en) | 2010-04-30 | 2014-06-03 | Ubotic Intellectual Property Co. Ltd. | Semiconductor package configured to electrically couple to a printed circuit board and method of providing same |
| US8853564B2 (en) | 2010-04-30 | 2014-10-07 | Ubotic Intellectual Property Co. Ltd. | Air cavity package configured to electrically couple to a printed circuit board and method of providing same |
| CN105323688A (en) * | 2014-08-04 | 2016-02-10 | 北京卓锐微技术有限公司 | Silicon capacitance microphone with enlarged back cavity |
| WO2016176993A1 (en) * | 2015-05-06 | 2016-11-10 | 歌尔声学股份有限公司 | Mems microphone encapsulation structure |
| CN111295894A (en) * | 2017-09-12 | 2020-06-16 | 美商楼氏电子有限公司 | Microphone package |
| US10924867B2 (en) | 2017-05-25 | 2021-02-16 | Knowles Electroics, LLC | Microphone package |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100722689B1 (en) | 2006-05-03 | 2007-05-30 | 주식회사 비에스이 | Silicon condenser microphone having additional back chamber |
| KR100722687B1 (en) | 2006-05-09 | 2007-05-30 | 주식회사 비에스이 | Directional silicon condenser microphone having additional back chamber |
| KR100737726B1 (en) | 2006-07-10 | 2007-07-10 | 주식회사 비에스이 | Packaging structure of mems microphone |
| KR200448302Y1 (en) | 2007-05-26 | 2010-03-30 | 고어텍 인크 | Silicon condenser microphone |
| KR101008399B1 (en) * | 2007-09-03 | 2011-01-14 | 주식회사 비에스이 | Condenser microphone using the ceramic package whose inside is encompassed by metal or conductive materials |
| JP5844155B2 (en) | 2008-10-14 | 2016-01-13 | ノールズ エレクトロニクス，リミテッド ライアビリティ カンパニー | Microphone including multiple transducer elements |
| KR101088400B1 (en) * | 2009-10-19 | 2011-12-01 | 주식회사 비에스이 | Silicon condenser microphone having additional back chamber and method of making the same |
| US9467785B2 (en) | 2013-03-28 | 2016-10-11 | Knowles Electronics, Llc | MEMS apparatus with increased back volume |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09199824A (en) * | 1995-11-16 | 1997-07-31 | Matsushita Electric Ind Co Ltd | Printed wiring board and its mounting body |
| JP3378197B2 (en) | 1998-05-11 | 2003-02-17 | ホシデン株式会社 | Semiconductor electret condenser microphone |
| JP2001339794A (en) * | 2000-05-30 | 2001-12-07 | Star Micronics Co Ltd | Electret-condenser microphone and assembly method |
| US7166910B2 (en) | 2000-11-28 | 2007-01-23 | Knowles Electronics Llc | Miniature silicon condenser microphone |
| KR100349200B1 (en) * | 2000-12-12 | 2002-08-21 | 주식회사 씨에스티 | Ultra-thin type condenser microphone assembly and method for assembling the same |
| JP4528461B2 (en) * | 2001-05-16 | 2010-08-18 | シチズン電子株式会社 | Electret condenser microphone |
| JP3908059B2 (en) * | 2002-02-27 | 2007-04-25 | スター精密株式会社 | Electret condenser microphone |
| CN100446628C (en) * | 2002-12-02 | 2008-12-24 | 佳乐电子股份有限公司 | Capacitor type microphone and micro-electromechanical processing and manufacturing method thereof |
| KR100549188B1 (en) * | 2003-08-14 | 2006-02-10 | 주식회사 비에스이 | Integrated base and electret condenser microphone using the same |
| KR100582224B1 (en) * | 2004-06-10 | 2006-05-23 | 주식회사 비에스이 | The self-alignment capacitive structure for silicon condenser microphone |
-
2005
- 2005-07-07 KR KR1020050061363A patent/KR100648398B1/en not_active IP Right Cessation
- 2005-08-11 CN CN200580000595XA patent/CN1813490B/en not_active Expired - Fee Related
- 2005-08-11 WO PCT/KR2005/002626 patent/WO2007007929A1/en active Application Filing
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010048833A1 (en) * | 2008-10-28 | 2010-05-06 | 歌尔声学股份有限公司 | Silicon capacitor microphone |
| CN101478710B (en) * | 2009-01-17 | 2012-10-17 | 歌尔声学股份有限公司 | Silicon capacitor microphone |
| CN102318365B (en) * | 2009-02-13 | 2014-05-14 | 船井电机株式会社 | Microphone unit |
| US8818010B2 (en) | 2009-02-13 | 2014-08-26 | Funai Electric Co., Ltd. | Microphone unit |
| CN102318365A (en) * | 2009-02-13 | 2012-01-11 | 船井电机株式会社 | Microphone unit |
| US8809974B2 (en) | 2010-02-26 | 2014-08-19 | Ubotic Intellectual Property Company Limited | Semiconductor package for MEMS device and method of manufacturing same |
| WO2011103720A1 (en) * | 2010-02-26 | 2011-09-01 | Ubotic Intellectual Property Co., Ltd. | Semiconductor package for mems device and method of manufacturing the same |
| CN102215448A (en) * | 2010-04-08 | 2011-10-12 | 北京卓锐微技术有限公司 | Silicon microphone packaging method capable of shielding electromagnetic interference, packaging body and electronic device |
| CN102215448B (en) * | 2010-04-08 | 2015-04-01 | 北京卓锐微技术有限公司 | Silicon microphone packaging method capable of shielding electromagnetic interference, packaging body and electronic device |
| US8742569B2 (en) | 2010-04-30 | 2014-06-03 | Ubotic Intellectual Property Co. Ltd. | Semiconductor package configured to electrically couple to a printed circuit board and method of providing same |
| US8853564B2 (en) | 2010-04-30 | 2014-10-07 | Ubotic Intellectual Property Co. Ltd. | Air cavity package configured to electrically couple to a printed circuit board and method of providing same |
| CN103663352A (en) * | 2013-12-30 | 2014-03-26 | 上海集成电路研发中心有限公司 | MEMS microphone packaging structure and packaging method |
| CN103663352B (en) * | 2013-12-30 | 2017-11-07 | 上海集成电路研发中心有限公司 | A kind of MEMS microphone package structure and method for packing |
| CN105323688A (en) * | 2014-08-04 | 2016-02-10 | 北京卓锐微技术有限公司 | Silicon capacitance microphone with enlarged back cavity |
| WO2016176993A1 (en) * | 2015-05-06 | 2016-11-10 | 歌尔声学股份有限公司 | Mems microphone encapsulation structure |
| US10924867B2 (en) | 2017-05-25 | 2021-02-16 | Knowles Electroics, LLC | Microphone package |
| CN111295894A (en) * | 2017-09-12 | 2020-06-16 | 美商楼氏电子有限公司 | Microphone package |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1813490B (en) | 2012-08-22 |
| KR100648398B1 (en) | 2006-11-24 |
| WO2007007929A1 (en) | 2007-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1813490A (en) | Package structure of silicon capacitor microphone and fabrication method thereof | |
| CN1189061C (en) | Semiconductor device, semiconductor electret capacitor microphone and mfg. method thereof | |
| CN1203726C (en) | Silicon-based sensor system | |
| CN1750260A (en) | Capacitance type physical quantity sensor having sensor chip and circuit chip | |
| CN104137571B (en) | MEMS microphone with spring and inner support | |
| CN1933681A (en) | Condenser microphone | |
| CN2812465Y (en) | Microphone package structure for micro-electromechanical system | |
| KR100809702B1 (en) | Semiconductor package | |
| JPWO2005086534A1 (en) | Electret condenser | |
| CN107404697A (en) | MEMS sonic transducers and corresponding manufacture method with comb-tooth-type electrode | |
| CN101427591A (en) | Condenser microphone | |
| CN1909746A (en) | Condenser microphone | |
| CN206640794U (en) | MEMS sonic transducers and electronic equipment | |
| CN1241021C (en) | Acceleration sensor and method of manufacture thereof | |
| CN1233198C (en) | Electret capacitance microphone and making method | |
| CN1761364A (en) | Electret condenser microphone | |
| CN1722422A (en) | Semiconductor packages | |
| CN1894999A (en) | Piezoelectric electro-acoustic converter | |
| CN102158775A (en) | MEMS (Micro Electro Mechanical System) microphone packaging structure and forming method thereof | |
| CN1706217A (en) | A parallelepiped type condenser microphone for SMD | |
| US6972372B1 (en) | Method and apparatus for stacking electrical components using outer lead portions and exposed inner lead portions to provide interconnection | |
| CN101534465A (en) | Micro electronmechanical microphone and packaging method thereof | |
| CN101389155A (en) | Silicon wafer capacitor microphone | |
| KR102359943B1 (en) | Microphone device | |
| JP4392466B1 (en) | MEMS device, MEMS device module, and acoustic transducer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120822 Termination date: 20170811 |