CN1203726C - Silicon-based sensor system - Google Patents
Silicon-based sensor system Download PDFInfo
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- CN1203726C CN1203726C CNB008153809A CN00815380A CN1203726C CN 1203726 C CN1203726 C CN 1203726C CN B008153809 A CNB008153809 A CN B008153809A CN 00815380 A CN00815380 A CN 00815380A CN 1203726 C CN1203726 C CN 1203726C
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- transducer
- sensing system
- carrier body
- contact element
- active parts
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- 239000010703 silicon Substances 0.000 title claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 24
- 229910000679 solder Inorganic materials 0.000 claims description 22
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- 241000500881 Lepisma Species 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
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Images
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R25/00—Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception
- H04R25/60—Mounting or interconnection of hearing aid parts, e.g. inside tips, housings or to ossicles
- H04R25/609—Mounting or interconnection of hearing aid parts, e.g. inside tips, housings or to ossicles of circuitry
Abstract
The present invention relates to solid state silicon-based condenser microphone systems suitable for batch production. The combination of the different elements forming the microphone system is more flexible compared to any other system disclosed in the prior art. Electrical connections between the different elements of the microphone system are established economically and reliably via a silicon carrier using flip-chip technology. The invention uses an integrated electronic circuit chip, preferably an application specific integrated circuit (ASIC) which may be designed and manufactured separately and independent of the design and manufacture of the transducer element of the microphone. The complete sensor system can be electrically connected to an external substrate by surface mount technology with the contacts facing one side of the system that is not in conflict with the above-mentioned interface to the environment. This allows the user to apply simple and efficient surface mount techniques for the assembly of the overall system.
Description
Technical field
The present invention relates to a kind of sensing system, this sensing system comprises a carrier body, an element of transducer and an electronic equipment.The present invention is specifically related to use the electrostatic microphone system of flip chip technology assembling.The invention further relates to the electrostatic microphone system that is suitable for being surface mounted on the printed circuit board (PCB) (PCB) for example.
Background technology
In instrument and mobile communication system industry, one of elementary object is to miniaturize the elements, and also will keep good electroacoustic performance simultaneously and give good user friendly and the operability of satisfied property.The technical performance data comprise sensitivity, noise, stability, tightness, intensity and to the insensibility of electromagnetic interference (EMI) and other outside and environmental condition.In the past, carried out repeatedly attempting to when keeping or improving their technical performance data, making less microphone system.
Another kind of viewpoint in these element industry relates to the simplification that is integrated in the total system.
EP 561 566 discloses a kind of solid capacitor formula microphone, and it has a field-effect transistor (FET) Circuits System and a cavity or the voice entry that is positioned on the same chip.The technology and the technology that are used to make the technology and the technology of FET Circuits System and are used to make element of transducer have a great difference.Therefore, the fabrication stage that disclosed element of transducer and FET system requirements two (or may be more) separate in EP 561 566, this makes and makes that more complicated also cost is also higher thus with regard to its essence.
In the past few years, mix microelectromechanical systems (MEMS) and obtained significant progress.This is relevant with the development of the proper technology that is used to make this system basically.One of advantage of this hybrid system relates to scale, and scale comprises that the system of the relative complex of mechanical little transducer and specially designed electronic equipment can be made by this.
US 5,889, and 872 disclose a kind of hybrid system, and this system comprises the integrated circuit (IC) chip that a silicon microphone and the wire-bonded that is used to be electrically connected are installed on it.The shortcoming of this solution is need be to the additional protection and the space of bonding wire.
US5,856,914 disclose a kind of micromachine device of upside-down mounting tandem mounting, and such as an electrostatic microphone, a part of carrier that this microdevice is installed on it forms the part of final system.The shortcoming of this system is such fact, and this micromachine device can not be tested before being installed on the carrier.Another shortcoming of the system of the disclosure relates to selected material.This micromachine device is made up of Si, and carrier is made by PCB or ceramic material.The difference of thermal coefficient of expansion can be easy to make the integrated complicated of these different materials.
At Denmark periodical Elektronik og Data1998, the 3rd phase, the article of 4-8 page or leaf " first kind of microtelephone based on silicon " discloses the microphone system that can how design and make based on silicon.This article discloses a kind of three layers of microphone system, is installed on the intermediate layer that this element of transducer is connected to an electronic equipment at this element of transducer upside-down mounting chip, such as an application-specific integrated circuit (ASIC) (ASIC).This element of transducer comprises a movable diaphragm and a backplate of rigidity basically.The structure based on silicon that forms chamber, the back side is installed on opposite at element of transducer.It should be noted that in order to make the microphone system and to be electrically connected, need wire-bonded or directly welding around thing.
Summary of the invention
The object of the present invention is to provide a kind of sensing system, form the technology upside-down mounting tandem mounting that is suitable for producing in batches of the different elements application standard of sensing system.
Another object of the present invention is to provide the sensing system of a kind of global function and sealing, this system can irrespectively work in the final position on the PCB for example with it.
Another purpose of the present invention is to provide the sensing system of a kind of global function and sealing, and this system can be tested before final the installation.
Another purpose of the present invention is to provide a kind of sensing system, and this system is suitable for using upside-down mounting chip or surface mounting technology for example to be installed on the PCB, and avoids wire-bonded or complicated bare chip to handle thus.
Another purpose of the present invention is to provide a kind of sensing system, and the distance in this system between element of transducer and electronic circuit is reduced, to reduce ghost effect and to take up room.
By provide a sensing system in first kind of situation, above-mentioned purpose is achieved, and this sensing system comprises:
Carrier body with first surface, described first surface hold the first and second set of contact elements,
An element of transducer that comprises an active parts, described active parts is connected with at least one contact element of element of transducer, one of contact element of described at least one contact element and first group of carrier body is aimed at so that obtain electrically contacting between this active parts and this carrier body, and
A kind of electronic equipment that comprises integrated circuit with at least one contact element, one of contact element of described at least one contact element and second group of carrier body is aimed at, so that obtain electrically contacting between this integrated circuit and this carrier body,
Wherein at least one contact element of first group is electrically connected with at least one contact element of second group, so that obtain electrically contacting between this integrated circuit of this active parts of element of transducer and electronic equipment.
Element of transducer can be the transducer of any kind in principle, such as pressure transducer, and accelerometer or thermometer.
In order to make sensing system and to carry out intercommunication around thing, carrier body can further comprise a second surface, and described second surface holds a plurality of contact elements.One of contact element that at least one contact element of first or second group and second surface hold is electrically connected.This first and second surface can be parallel to each other and relative basically.
Carrier body and element of transducer can be based on semi-conducting material such as silicon.In order to eliminate the influence of thermal stress, carrier body, element of transducer and electronic equipment can be based on same semiconductor material.Once more, this material can be a silicon.
In order to form the chamber, the back side that microphone is used, carrier body can further comprise the groove of aiming at the active parts of element of transducer.Be similarly the application of microphone, the active parts of element of transducer can comprise a capacitor, this capacitor by flexible sheet and basically the backplate of rigidity be combined to form.In addition, element of transducer further comprises a cavity or voice entry.The bottom of this cavity can be limited by the active parts of element of transducer or form.This flexible sheet and basically the backplate of rigidity can be electrically connected with first and second contact elements of element of transducer respectively so that will pass to carrier body by the signal that element of transducer receives.
Integrated circuit can be suitable for signal processing.This integrated circuit can be an ASIC.
In order to obtain directional sensitivity, transducer can further comprise second surface and an opening between the groove or a voice entry at carrier body.
In order to protect element of transducer to avoid for example particulate or moisture, the outer surface of transducer is at least in part by a lid protection.The lid of element of transducer and active parts can limit the up-and-down boundary of cavity respectively.In addition, at least one outer surface of sensing system can hold a conductive layer.This conductive layer can comprise a metal level or a conductive polymer coating.
Contact element can comprise solder material, such as tin, Yin Xi, Jin Xi or slicker solder.In addition, sensing system can comprise the sealing-in means that are used for the hermetic seal element of transducer.
In second kind of situation, the present invention relates to a kind of sensing system, this sensing system comprises:
One has the carrier body of first surface, and described first surface holds the first, the second and the 3rd set of contact element,
First element of transducer that comprises an active parts, described active parts is electrically connected with at least one contact element of first element of transducer, one of contact element of described at least one contact element and this first group of carrier body is aimed at, so that obtain electrically contacting between the active parts of first element of transducer and the carrier body
Second element of transducer that comprises an active parts, described active parts is electrically connected with at least one contact element of second element of transducer, one of contact element of described at least one contact element and second group of carrier body is aimed at, so that obtain electrically contacting between the active parts of second element of transducer and the carrier body, and
One comprises the electronic equipment of the integrated circuit with at least one contact element, and one of contact element of described at least one contact element and the 3rd group of carrier body is aimed at, so that obtain electrically contacting between integrated circuit and the carrier body.
Wherein at least one contact element of first group is electrically connected with at least one contact element of the 3rd group, and wherein at least one contact element of second group is electrically connected with at least one contact element of the 3rd group, so that obtain electrically contacting between the active parts of first element of transducer and the integrated circuit, and electrically contacting between the active parts of second element of transducer and the integrated circuit.
Transducer according to second kind of situation can be suitable for orientation sensing, such as the pressure transducer that is used for the direction sensitivity.
Carrier body such as the carrier body based on silicon, can further comprise the second surface that holds a plurality of contact elements.In order to obtain and being electrically connected of second surface, at least one contact element of first, second or the 3rd group can be electrically connected with one of contact element that holds at second surface.This first and second surface can be parallel to each other basically and relative.Preferably, element of transducer and electronic equipment are based on silicon.
Carrier body can further comprise first and second grooves, and this first groove is aimed at the active parts of first element of transducer, and this second groove is aimed at the active parts of second element of transducer.This first and second groove is as chamber, the back side.
In first and second element of transducers each can comprise a cavity outward in addition, and the bottom of described cavity is limited by the active parts of first and second element of transducers.
In order to measure for example variation of pressure, each active parts of first and second element of transducers can comprise a capacitor, described capacitor by a flexible sheet and basically the backplate of rigidity be combined to form.This flexible sheet and basically the backplate of rigidity can be electrically connected with the contact element of corresponding element of transducer.
In first and second element of transducers each can comprise in addition that one is used to protect the lid of element of transducer.The lid of first and second element of transducers and active parts can be located by this way, and promptly they define the up-and-down boundary of respective cavities.
Sensing system can hold a conductive layer to the small part outer surface.This conductive layer can be a metal material layer or a conductive polymer coating.This contact element can comprise solder material, such as tin, Yin Xi, Jin Xi or slicker solder.
Be suitable for producing in batches according to solid-state electrostatic microphone system of the present invention based on silicon.Compare with disclosed any other system in the prior art, the combination of different elements that forms this microphone system is more flexible.The present invention for example makes by the opening that is positioned at system's one side provides an interface that very well limits with environment to become possibility.This opening can be covered by a film or filter, with dustproof, moisture and other contaminating impurity or disturb the performance of microphone.Electrical connection between the different elements of microphone system adopts upside-down mounting chip technology through silicon carrier economy and foundation reliably.
The present invention uses a kind of integrated electronic circuit chip, preferred a kind of ASIC, and it can be dividually and with the design of the element of transducer of microphone with make and irrespectively design and make.This is favourable because it is different with the technology and the technology of manufacturing element of transducer with technology to be used to make the technology of integrated electronic circuit chip, and each fabrication stage can be thus by optimization independently.In addition, the test of element of transducer and ASIC can be carried out at wafer scale.
The complete sensors system can be by surface mounting technology with towards being electrically connected with contacting with external substrate of the reconcilable system of above-mentioned interface to environment one side.This allows the user simple and effective surface mounting technology to be applied to the assembling of whole system.
Description of drawings
Be further explained in detail the present invention now with reference to accompanying drawing, wherein
Fig. 1 is the explanation based on the overall application of the sensing system of silicon,
Fig. 2 is the explanation of the overall application of sensing system based on silicon with cover,
Fig. 3 is the explanation of using based on the microphone of the sensing system of silicon,
The explanation that Fig. 4 uses for the microphone of sealing,
Fig. 5 is the closure of a horizontal feedthrough and sealing ring,
Fig. 6 is the explanation of using based on the directional microphone of the sensing system of silicon, and
Fig. 7 is the explanation of using based on second kind of directional microphone of the sensing system of silicon.
Embodiment
The technology that is used to make the different elements of sensing system mainly comprises the known technology in the microtechnology field.
Fig. 1 illustrates the silicon carrier substrate 2 of the feed-through hole 20 that comprises one or more vertical etchings.For this silicon carrier substrate 2 of body crystalline silicon has the solder bump 8,22 that lays respectively on first surface and the second surface.The signal of telecommunication is transported to second surface from first surface through feedthrough line 23.On first surface, one or more element of transducer 1 upside-down mounting chips are installed on the silicon carrier substrate 2, by the first set of solder piece, 8 connections and fixing.Equally on first surface, one or more electronic equipments, such as integrated circuit (IC) chip 3, the upside-down mounting chip is installed on the silicon carrier substrate 2, is connected and fixing by the second set of solder piece 8.The material of solder bump 8 is generally tin, Yin Xi, Jin Xi or slicker solder, but also can use other metal.
Scolder sealing ring 9 provides the sealing-in of element of transducer 1.In this case, feedthrough line 23 is used for the signal of telecommunication is transported to electronic equipment 3 at sealing ring 9 from element of transducer 1.This very at length illustrates in Fig. 5.This signal can be transported to electronic circuit by other conductive path equally.
Second surface is provided to solder bump 22 and is used for mounted on surface on for example PCB or another carrier.
Fig. 2 illustrates the assembly of similar assembly shown in Figure 1, but in this embodiment, electronic equipment 3 has been connected by a set of solder piece 8 and other means such as underfill or adhesive 21 and be fixing.In addition, this assembly is by lid 5 protections, and this lid is fixed in the element of transducer 1 of upside-down mounting tandem mounting or electronic equipment 3 or the two.Lid 5 has provides the good opening of determining the environment access 4, for example transmits the grid or the filter of sound, and the protection microphone avoids particulate or moisture.This lid can for example be made respectively by metal or polymer by punching or injection moulding respectively.
Be used for the system that microphone is used shown in Fig. 3 and 4.Element of transducer 1 is a microphone in these embodiments, and chamber, the back side 11 has been etched in the silicon substrate 2.By being the wet-etching technology of reactant with KOH, TMAH or EDP or this chamber, back side being etched in the silicon carrier by dry etch process such as reactive ion etching.This cavity 11 can be etched in the step identical with feed-through hole 20.
Difference between Fig. 3 and 4 is that the system among Fig. 4 shields so that EMI to be provided with filter 5 sealings.This EMI shielding 16 be one such as the conductive polymer coating of silver-colored epoxides or such as electroplate or the Cu of evaporation or the metal level of Au.In addition, the integrated circuit (IC) chip among Fig. 43 is connected by the additional means such as underfill or adhesive 21 with filter 5 and fixes.
Following is the function of microphone.Opening 4 is as voice entry, and the filter 5 of acoustic pressure through covering opening 4 enters the cavity 10 as the microphone cup on every side.The crooked diaphragm 12 of acoustic pressure, this makes the air between diaphragm 12 and the backplate 13 discharge through eyelet 19.
This diaphragm can design and make in a different manner.Diaphragm can be designed to three layers structure as an example, and this three-decker can have two skins that comprise silicon nitride, and the intermediate layer comprises polysilicon.Be included in the polysilicon in the intermediate layer or mix with boron (B) or with phosphorus (P).Backplate comprises polysilicon and the silicon nitride that B or P mix equally.Cavity 11 is as the chamber, the back side of microphone.
When diaphragm 12 response incident sound pressures are bent, the capacitance of the capacitor that is formed by diaphragm 12 and backplate 13 will change with incident sound pressure.Circuit on the integrated circuit (IC) chip 3 is electrically connected with diaphragm 12 and backplate 13 through solder bump 8.This circuit is designed to detect the variation of the capacitance of the capacitor that is formed by diaphragm 12 and backplate 13.This circuit is electrically connected with solder bump 22 through solder bump 8 and vertical feedthrough line 23, is used for its other electronic circuit system with power supply and for example instrument is electrically connected.
When the capacitor that is formed by diaphragm 12 and backplate 13 was worked, backplate 13 was connected with the DC power supply so that give backplate 13 chargings.When the acoustic pressure owing to response change, when the variable in distance between diaphragm 12 and the backplate 13 made capacitance variations, an AC voltage was applied the top of the DC level that is applied.The amplitude of this AC voltage is to a kind of tolerance of capacitance variations and also is a kind of tolerance of acoustic pressure that diaphragm is subjected to thus.
The closure of horizontal feedthrough line 23 and sealing ring 9 shown in Fig. 5.Feedthrough 24 is by insulating barrier 25 and sealing ring 9 and substrate 2 electric insulations.Insulating barrier 25 insulate the solder bump 8 of transducer 1 similarly with substrate 2.The solder bump 8 of transducer 1 and the solder bump 8 of circuit chip 3 are electrically connected through feedthrough line 24.
Shown in Fig. 6 with the similar microphone of the microphone of Fig. 3.But, in cavity 11, introduce opening 24.It is crooked that opening 24 produces film, and the barometric gradient on this bending reflectance coating causes the directional sensitivity of microphone.
Shown in Fig. 7 with Fig. 3 in the similar microphone of microphone.But, add an additional element of transducer, make microphone use 1, two element of transducer of two element of transducers all to comprise film 12 and backplate 13 now.Two element of transducers are connected with carrier body 2 with the sealing ring 9 that has cavity 11 by the solder bump 8 of each element of transducer.Two element of transducers can be measured the differing of bump sound wave of the directional sensitivity that causes microphone.
The quantity of sensing element is for example increased to sensing element with any amount of ranks arrayed from two (as shown in Figure 7), will be obvious for those of ordinary skill.
Claims (30)
1. a sensing system comprises
-one carrier body (2) with first surface, described first surface holds the first and second set of contact elements,
-one element of transducer (1) that comprises an active parts, described active parts is connected with at least one contact element of element of transducer, and
-one electronic equipment (3) that comprises integrated circuit with at least one contact element,
It is characterized in that
One of contact element of at least one contact element of-this element of transducer (1) and first group of carrier body (2) is aimed at, so that obtain electrically contacting between the active parts of this element of transducer (1) and this carrier body (2), and is
One of contact element of at least one contact element of-this electronic equipment (3) and second group of carrier body (2) is aimed at, so that this element of transducer (1) and this electronic equipment (3) are adjacent to be positioned on the first surface of this carrier body (2), simultaneously so that obtain electrically contacting between this integrated circuit and this carrier body, and be
-wherein at least one contact element of first group is electrically connected with at least one contact element of second group, so that obtain electrically contacting between the integrated circuit of the active parts of element of transducer (1) and electronic equipment (3).
2. according to the sensing system of claim 1, wherein this carrier body (2) further comprises second surface, described second surface holds a plurality of contact elements, and wherein at least one contact element of first or second group is electrically connected with one of contact element that is held by second surface.
3. according to the sensing system of claim 2, wherein this first and second surface is parallel to each other and relative.
4. according to the sensing system of claim 1, wherein this carrier body (2) is based on the carrier body of silicon.
5. according to the sensing system of claim 1, wherein this carrier body (2) further comprises a groove (11), and described groove (11) is aimed at the active parts of this element of transducer.
6. according to the sensing system of claim 1, wherein this element of transducer further comprises a cavity (10), and this active parts limits the bottom of described cavity (10).
7. according to the sensing system of claim 5, further comprise the second surface of carrier body (2) and the opening (24) between the groove (11).
8. according to the sensing system of claim 1, wherein this element of transducer (1) is based on silicon.
9. according to the sensing system of claim 1, wherein this carrier body (2), element of transducer (1) and electronic equipment (3) are based on silicon.
10. according to the sensing system of claim 1, wherein the active parts of this element of transducer comprises a capacitor, and described capacitor is combined to form by the backplate (13) of a flexible sheet (12) and a rigidity.
11. according to the sensing system of claim 6, wherein this element of transducer (1) further comprises a lid (5), the up-and-down boundary that the lid (5) of element of transducer (1) and active parts limit this cavity (10).
12. according to the sensing system of claim 1, wherein, a conductive layer (16) be placed in this sensing system to the small part outer surface.
13. according to the sensing system of claim 12, wherein this conductive layer is a metal level.
14. according to the sensing system of claim 12, wherein this conductive layer is a conductive polymer coating.
15. according to the sensing system of claim 1, wherein this contact element is a solder bump, its material is to select from the group that tin, Yin Xi, Jin Xi or slicker solder are formed.
16., further comprise the sealing ring that is used for the hermetic seal element of transducer according to the sensing system of claim 6.
17. a sensing system comprises
-one has the carrier body of first surface, and described first surface holds the first, the second and the 3rd set of contact element,
-comprising first element of transducer of an active parts, described active parts is electrically connected with at least one contact element of first element of transducer,
-comprising second element of transducer of an active parts, described active parts is electrically connected with at least one contact element of second element of transducer,
-comprise the electronic equipment of integrated circuit with at least one contact element,
It is characterized in that
At least one contact element of-this first element of transducer is aimed at one of contact element of this first group of carrier body, so that obtain electrically contacting between the active parts of first element of transducer and the carrier body, and is
At least one contact element of-this second element of transducer is aimed at one of contact element of second group of carrier body, so that first and second element of transducers are adjacent to be positioned on the first surface of this carrier body, simultaneously so that obtain electrically contacting between the active parts of second element of transducer and the carrier body, and be
One of contact element of at least one contact element of-electronic equipment and the 3rd group of carrier body is aimed at, so that this electronic equipment and second element of transducer are adjacent to be positioned on the first surface of this carrier body, simultaneously so that obtain electrically contacting between this integrated circuit and this carrier body, and be
-wherein at least one contact element of first group is electrically connected with at least one contact element of the 3rd group, and at least one contact element that is second group is electrically connected with at least one contact element of the 3rd group, so that obtain electrically contacting between the active parts of first element of transducer and this integrated circuit, and electrically contacting between the active parts of second element of transducer and this integrated circuit.
18. sensing system according to claim 17, wherein this carrier body further comprises second surface, described second surface holds a plurality of contact elements, and wherein at least one contact element of first, second or the 3rd group is electrically connected with one of contact element that is held by second surface.
19. according to claim 18 sensing system, wherein this first and second surface is parallel to each other basically and relative.
20. according to the sensing system of claim 17, wherein this carrier body is based on the carrier body of silicon.
21. according to the sensing system of claim 17, wherein this carrier body further comprises first and second grooves, this first groove is aimed at the active parts of first element of transducer, and this second groove is aimed at the active parts of second element of transducer.
22. according to the sensing system of claim 17, wherein each in first and second element of transducers further comprises a cavity, the bottom of described cavity is limited by the active parts of first and second element of transducers.
23. according to the sensing system of claim 17, wherein this first and second element of transducer is based on silicon.
24. according to the sensing system of claim 17, wherein this carrier body, first and second element of transducers and electronic equipment are based on silicon.
25. according to the sensing system of claim 17, wherein each in the active parts of first and second element of transducers comprises a capacitor, described capacitor is combined to form by the backplate of a flexible sheet and a rigidity.
26. according to the sensing system of claim 17, wherein each in first and second element of transducers further comprises a lid, wherein the lid of first and second element of transducers and active parts limit the up-and-down boundary of respective cavities.
27. according to the sensing system of claim 17, wherein, a conductive layer be placed in sensing system to the small part outer surface.
28. according to the sensing system of claim 27, wherein this conductive layer is a metal level.
29. according to the sensing system of claim 27, wherein this conductive layer is a conductive polymer coating.
30. according to the sensing system of claim any 17, wherein this contact element is a solder bump, its material is to select from the group that tin, Yin Xi, Jin Xi or slicker solder are formed.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DKPA199901254 | 1999-09-06 | ||
| DKPA1999/01254 | 1999-09-06 | ||
| US39162899A | 1999-09-07 | 1999-09-07 | |
| US09/391,628 | 1999-09-07 | ||
| US09/570,434 | 2000-05-12 | ||
| US09/570,434 US6522762B1 (en) | 1999-09-07 | 2000-05-12 | Silicon-based sensor system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1387741A CN1387741A (en) | 2002-12-25 |
| CN1203726C true CN1203726C (en) | 2005-05-25 |
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ID=27221189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB008153809A Expired - Lifetime CN1203726C (en) | 1999-09-06 | 2000-09-06 | Silicon-based sensor system |
Country Status (10)
| Country | Link |
|---|---|
| EP (1) | EP1214864B1 (en) |
| JP (2) | JP4459498B2 (en) |
| CN (1) | CN1203726C (en) |
| AT (1) | ATE242587T1 (en) |
| AU (1) | AU6984100A (en) |
| CA (1) | CA2383740C (en) |
| DE (1) | DE60003199T2 (en) |
| DK (1) | DK1214864T3 (en) |
| PL (1) | PL209935B1 (en) |
| WO (1) | WO2001019134A2 (en) |
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- 2000-09-06 WO PCT/DK2000/000491 patent/WO2001019134A2/en active IP Right Grant
- 2000-09-06 EP EP00958265A patent/EP1214864B1/en not_active Expired - Lifetime
- 2000-09-06 PL PL354095A patent/PL209935B1/en unknown
- 2000-09-06 DE DE60003199T patent/DE60003199T2/en not_active Expired - Lifetime
- 2000-09-06 CA CA002383740A patent/CA2383740C/en not_active Expired - Fee Related
- 2000-09-06 JP JP2001522196A patent/JP4459498B2/en not_active Expired - Fee Related
- 2000-09-06 DK DK00958265T patent/DK1214864T3/en active
- 2000-09-06 CN CNB008153809A patent/CN1203726C/en not_active Expired - Lifetime
- 2000-09-06 AU AU69841/00A patent/AU6984100A/en not_active Abandoned
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106716636A (en) * | 2014-09-17 | 2017-05-24 | 英特尔公司 | Die with integrated microphone device using through-silicon vias (TSVs) |
| CN106716636B (en) * | 2014-09-17 | 2021-05-28 | 英特尔公司 | Die with integrated microphone device using through-silicon vias (TSVs) |
| CN108807657A (en) * | 2017-04-26 | 2018-11-13 | 矽品精密工业股份有限公司 | Package structure and method for fabricating the same |
| CN108807657B (en) * | 2017-04-26 | 2022-01-04 | 矽品精密工业股份有限公司 | Package structure and method for fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| PL209935B1 (en) | 2011-11-30 |
| DE60003199T2 (en) | 2004-07-01 |
| WO2001019134A3 (en) | 2001-09-07 |
| JP2003508998A (en) | 2003-03-04 |
| DK1214864T3 (en) | 2003-08-25 |
| WO2001019134A2 (en) | 2001-03-15 |
| CA2383740A1 (en) | 2001-03-15 |
| EP1214864A2 (en) | 2002-06-19 |
| JP2007028671A (en) | 2007-02-01 |
| EP1214864B1 (en) | 2003-06-04 |
| PL354095A1 (en) | 2003-12-29 |
| ATE242587T1 (en) | 2003-06-15 |
| DE60003199D1 (en) | 2003-07-10 |
| CN1387741A (en) | 2002-12-25 |
| CA2383740C (en) | 2005-04-05 |
| JP4459498B2 (en) | 2010-04-28 |
| JP4303742B2 (en) | 2009-07-29 |
| AU6984100A (en) | 2001-04-10 |
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