CN1808536A - Pixel unit of panel display and its drive method - Google Patents
Pixel unit of panel display and its drive method Download PDFInfo
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- CN1808536A CN1808536A CNA2006100071182A CN200610007118A CN1808536A CN 1808536 A CN1808536 A CN 1808536A CN A2006100071182 A CNA2006100071182 A CN A2006100071182A CN 200610007118 A CN200610007118 A CN 200610007118A CN 1808536 A CN1808536 A CN 1808536A
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000015654 memory Effects 0.000 claims abstract description 86
- 239000003990 capacitor Substances 0.000 claims abstract description 37
- 239000010409 thin film Substances 0.000 claims description 58
- 239000004973 liquid crystal related substance Substances 0.000 claims description 11
- 230000003068 static effect Effects 0.000 description 34
- 238000010586 diagram Methods 0.000 description 6
- 239000003086 colorant Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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Abstract
The disclosed pixel unit for panel display comprises at least: one non-volatile memory with grid, source and drain electrodes electric connected to a scan line, a data circuit, and a storage capacitor, respectively. Wherein, the opposite drive method comprises: providing a scan voltage and a data voltage to change the initial voltage of the said memory, and then redefining the storage potential of the capacitor.
Description
Technical field
The present invention relates to a kind of pixel cell and driving method thereof of flat-panel screens, particularly relate to a kind of pixel cell and driving method thereof that uses Nonvolatile memory as driving component.
Background technology
Existing display is when playing same tableaux (static image), and for example when reading article, electronic mail, chip for driving still must repeatedly transmit same image information to each pixel cell.In other words, even picture still is motionless, chip for driving still constantly consumes electric power.Yet,, be necessary to use lower power consumption to show that tableaux is to reduce its charging times for portable displayer.
In order to reduce the power consumption of display, there is prior art to propose in pixel cell, to add to put internal storage location, for example static random access memory (SRAM) reaches the power saving effect when showing tableaux.
Please refer to Figure 1A, is the pixel cell for existing flat-panel screens.Pixel cell 10 has one scan line 11, a data line 12, a thin film transistor (TFT) 13, a static random access memory 14 and an electrode 15.Sweep trace 11 is electrically connected to the grid of thin film transistor (TFT) 13.Data line 12 is electrically connected to the source electrode of thin film transistor (TFT) 13.One end of static random access memory 14 is electrically connected to electrode 15, and the other end can be selected " general modfel " or " static battery saving mode " with the user and disconnect or electric connection with thin film transistor (TFT) 13.
Under general modfel, static random access memory 14 does not electrically connect with thin film transistor (TFT) 13, so pixel cell 10 is that driving component operates to cooperate an electric capacity (not icon) with thin film transistor (TFT) 13 only.If switch to static battery saving mode, then static random access memory 14 and thin film transistor (TFT) 13 electric connections are with the light and shade or the GTG of common control picture.So, chip for driving (not icon) does not need repeatedly to transmit same image information to pixel cell 10, can allow power consumption descend.
The circuit structure of static random access memory 14 comprises the phase inverter 144 and 146 of a N channel transistor 142 serial connections to two parallel connections shown in Figure 1B, be connected in series to another N channel transistor 148 again.
Refer again to Fig. 1 C, the basic structure of phase inverter is described.Phase inverter 144 is to be formed in parallel for a N channel transistor 1441 and a p channel transistor 1442.Phase inverter 146 also has identical structure, so the static random access memory shown in Figure 1B 14 in fact is made up of 6 transistors.
Hold above-mentioned because static random access memory needs to be made up of 6-8 transistor, so can reduce the aperture opening ratio of pixel cell.When display is luminescence component with Organic Light Emitting Diode (OLED),, then can not adopt the mode of bottom-emission (bottom-emission) if the static random access memory setting is arranged thereunder.In addition, each sub-pixel (sub-pixel) of configuring static random access memory only can show bright and dark two kinds of GTGs.Therefore, each pixel cell by three sub-pixels of RGB (RGB) are formed can only show 8 kinds of colors at most.
Summary of the invention
The object of the present invention is to provide a kind of pixel cell, (non-volatilememory device) is driving component with a Nonvolatile memory, and has high aperture opening ratio.
Another object of the present invention is to provide a kind of driving method of pixel cell, this pixel cell is a driving component with a Nonvolatile memory.When this pixel cell is applied in the flat-panel screens, can make this flat-panel screens show tableaux by this driving method, and produce color change greater than 8 kinds of colors with lower power consumption.
Pixel cell of the present invention comprises that at least one Nonvolatile memory, at least one sweep trace are electrically connected to the source electrode that the grid of this Nonvolatile memory, at least one data line are electrically connected to this Nonvolatile memory, and at least one storage capacitors is electrically connected to the drain electrode of this Nonvolatile memory.
For cooperating the running of above-mentioned pixel cell, the present invention also provides a kind of driving method.Under general modfel, this Nonvolatile memory has one first starting potential, stores current potential so that this storage capacitors has one first.When desiring to switch to static battery saving mode, carry out with the following step.At first, this first starting potential of erasing.Then write one second starting potential in this Nonvolatile memory, to replace this first starting potential.The grid of scan voltage in this Nonvolatile memory is provided again, stores current potential to define one second of this storage capacitors by the difference of this scanning voltage and this second starting potential.And, the source/drain electrode of a data voltage in this Nonvolatile memory is provided, with to this storage capacitors charging, make this first storage current potential change into this second storage current potential.
According to the present invention, pixel cell has lacked static random access memory than prior art, so aperture opening ratio can increase.Behind Nonvolatile memory replacement thin film transistor (TFT), cooperate above-mentioned driving method, can flexibly change starting potential to reach power saving and the purpose that increases color and grey exponent number.When the present invention is specially adapted to show tableaux, do the switching of general modfel and static battery saving mode.
Description of drawings
Figure 1A is the pixel cell for existing flat-panel screens;
Figure 1B is the circuit structure for static random access memory;
Fig. 1 C is the basic structure for phase inverter;
Fig. 2 A is applied in the LCD for pixel cell of the present invention;
Fig. 2 B is according to driving method of the present invention, the result of three pixel cells in the operation LCD;
Fig. 3 A is applied to an organic electro-luminescent display for pixel cell of the present invention;
Fig. 3 B-3C is pixel cell of the present invention, has a plurality of Organic Light Emitting Diodes;
Fig. 4's is pixel cell of the present invention, has the N channel thin-film transistor;
Fig. 5 is pixel cell of the present invention, has anti-phase type Organic Light Emitting Diode;
Fig. 6 is for pixel cell of the present invention is applied in the LCD, and it can control static the demonstration and dynamically demonstration respectively;
Fig. 7 A-7C is for pixel cell of the present invention is applied in the organic electro-luminescent display, and it can control static the demonstration and dynamically demonstration respectively;
Fig. 8 is the sequential control figure for tableaux;
Fig. 9 is according to the present invention, the power-consumption curve of chip for driving; And
Figure 10 is the relation curve for power consumption and panel clear zone ratio.
The reference numeral explanation
10 pixel cells, 30 pixel cells
11 sweep traces, 31 data lines
12 data lines, 32 sweep traces
13 thin film transistor (TFT)s, 33 Nonvolatile memories
14 static random access memories, 34 storage capacitors
142 N channel transistors, 35 driving transistorss
144 phase inverters, 36 Organic Light Emitting Diodes
1441 N channel transistors, 40 pixel cells
1442 p channel transistors, 42 Organic Light Emitting Diodes
146 phase inverters, 50 pixel cells
148 N channel transistors, 52 Organic Light Emitting Diodes
15 electrodes, 60 pixel cells
20 pixel cells, 62 N channel thin-film transistors
20c pixel cell 80 pixel cells
201 pixel electrodes, 82 sweep traces
202 pixel electrodes, 84 thin film transistor (TFT)s
203 pixel electrodes, 90 pixel cells
21 data lines, 92 sweep traces
22 sweep traces, 94 switching transistors
23 Nonvolatile memories, 100 pixel cells
24 storage capacitors, 102 N channel thin-film transistors
25 liquid crystal capacitances, 104 Organic Light Emitting Diodes
25a liquid crystal layer 110 pixel cells
112 N channel thin-film transistors
114 Organic Light Emitting Diodes
Embodiment
Now cooperate icon that pixel cell of the present invention and driving method thereof are described in detail in detail, and enumerate preferred embodiment the application mode of this pixel cell in flat-panel screens such as LCD or organic electro-luminescent display is described.
Please refer to Fig. 2 A, is to be applied in the LCD for pixel cell of the present invention.Pixel cell 20 comprises at least one data line 21, at least one sweep trace 22, at least one Nonvolatile memory 23, at least one storage capacitors 24 and at least one liquid crystal capacitance 25.Sweep trace 22 is electrically connected to the gate terminal G of Nonvolatile memory 23.Data line 21 is electrically connected to the source/drain electrode end S of Nonvolatile memory 23.Another source/drain electrode end D of Nonvolatile memory 23 then is electrically connected to a storage capacitors 24 and a liquid crystal layer (not icon) by a pixel electrode (not icon).The other end of storage capacitors 24 is provided a reference potential Vref1, and the difference of itself and source/drain electrode end D current potential forms an electric capacity current potential.Source/drain electrode end D current potential is accepted on one surface of this liquid crystal layer, and another surface of liquid crystal layer then is provided another reference potential Vref2, and forms the function as electric capacity, is called liquid crystal capacitance 25.Herein, reference potential Vref1 and Vref2 can be identical, or inequality, also can ground connection and form zero potential.
Nonvolatile memory 23 is that with the static random access memory difference Nonvolatile memory 23 does not disappear with power supply and changes its storage data state, but static random access memory can disappear along with power supply, and its storage data all can be lost.Based on above-mentioned characteristic, the present invention uses Nonvolatile memory 23, electronic type ROM (read-only memory) (the electrically erasable programmableread-only memory that can erase/write for example, EEPROM), flash memory (flash memory) or similar internal memory, to replace the driving component of existing thin film transistor (TFT) as pixel cell.Especially, when flat-panel screens showed a tableaux, chip for driving no longer needed repeatedly to transmit same image information to each pixel cell.Therefore can save the required electric energy of chip for driving operation.
In flat-panel screens, see through the writing mechanism of above-mentioned starting potential Vth, can make the Nonvolatile memory 23 of each pixel cell 20 have different starting potential Vth, and make storage capacitors 24 have different electric capacity current potentials.When storage capacitors 24 charging, provide scan voltage Vscan to all sweep traces 22 of flat-panel screens, and provide a data voltage Vdata all data lines 21.As (the Vdata＞Vscan) of data voltage during greater than scanning voltage.At this moment, hypothetical reference current potential Vref1 is zero, and then the charging voltage of storage capacitors 24 equals the pressure reduction (Vscan-Vth) of scanning voltage and starting potential.When needing frame update, the starting potential of erasing once more; If do not need frame update, then make scanning voltage Vscan and data voltage Vdata maintain a steady state (SS) and get final product.
Magnitude relationship for data voltage Vdata and scanning voltage Vscan is described as follows.As data voltage Vdata during less than " difference of scanning voltage Vscan and starting potential Vth ", the charging voltage of storage capacitors 24 equals data voltage Vdata.Under this situation,,, can't show the GTG brightness that different pixels sets so the electric capacity current potential of all pixels is identical because static battery saving mode provides the identical data voltage Vdata of all pixel cells.As data voltage Vdata during greater than scanning voltage Vscan, the charging voltage of storage capacitors 24 then is fixed on the situation of maximal value " Vscan-Vth ", so can utilize the adjustment starting potential, reaches the demonstration of different GTGs.
Please refer to Fig. 2 B, is to be example with three pixel cell 20a, 20b in the LCD and 20c, and operating result of the present invention is described.Suppose to utilize earlier starting potential that said method changes Nonvolatile memory 231 to be 2.5V, and the starting potential of Nonvolatile memory 233 is 0V for the starting potential of 5V, Nonvolatile memory 232.Provide the data voltage of 8V and the scanning voltage of 5V to whole liquid crystal panel.At this moment, factor greater than scanning voltage Vscan, is respectively 0V, 2.5V and 5V so the charging voltage of storage capacitors 241,242 and 243 is calculated with " Vscan-Vth " according to voltage Vdata, and represent pixel electrode 201,202 and 203 current potential also are 0V, 2.5V and 5V.If if the reference potential Vref2 of liquid crystal layer 25a equals zero or ground connection, then the operating voltage of pixel cell 20a becomes 0V, the operating voltage of pixel cell 20b becomes 2.5V, and the operating voltage of pixel cell 20c becomes 5V.Thus, Nonvolatile memory is with the starting potential of change, and the burning voltage on collocation data line and the sweep trace can produce multiple GTG brightness, and the power consumption when saving tableaux and showing.
Please refer to Fig. 3 A, is to be applied to an organic electro-luminescent display for pixel cell of the present invention.Pixel cell 30 comprises at least one data line 31, at least one sweep trace 32, at least one Nonvolatile memory 33, at least one storage capacitors 34, at least one driving transistors 35 and at least one Organic Light Emitting Diode 36.
Sweep trace 32 is electrically connected at the gate terminal G of Nonvolatile memory 33.Data line 31 is electrically connected to one of them source/drain electrode end S of Nonvolatile memory 33.Another source/drain electrode end D of Nonvolatile memory 33 is electrically connected to the grid and the storage capacitors 34 of driving transistors 35.The two ends of storage capacitors 34 are electrically connected to the grid and the drain electrode of driving transistors 35 respectively.The anode of Organic Light Emitting Diode 36 then simultaneously with the drain electrode and the storage capacitors 34 of driving transistors 35.
In the present embodiment, driving transistors 35 is to be a P channel thin-film transistor, and its source electrode is in order to accept a high-voltage level Vdd.The negative electrode of Organic Light Emitting Diode 36 is in order to accept a low voltage level Vss.Herein, the D voltage of ordering also is Vscan-Vth.If change the Vth of Nonvolatile memory 33, but therefore D point voltage modulation then can determine the grid cross-pressure of driving transistors 35, determines the drive current of Organic Light Emitting Diode 36 simultaneously.
Please refer to Fig. 3 B, is to be pixel cell of the present invention, has the Organic Light Emitting Diode of a plurality of series connection.Comparison diagram 3A, pixel cell 40 add and put an Organic Light Emitting Diode 42 and connect with Organic Light Emitting Diode 36.
Please refer to Fig. 3 C, is to be pixel cell of the present invention, has the Organic Light Emitting Diode of a plurality of parallel connections.Comparison diagram 3A, pixel cell 50 add that to put an Organic Light Emitting Diode 52 in parallel with Organic Light Emitting Diode 36.
Please refer to Fig. 4, while comparison diagram 3A, pixel cell 60 adopt a N channel thin-film transistor 62 to replace driving transistorss 35 (P raceway groove).The anode of Organic Light Emitting Diode 36 then is electrically connected to the source electrode of N channel thin-film transistor 62.
Please refer to Fig. 5, is for having the pixel cell 70 of anti-phase type (inverted) Organic Light Emitting Diode.Comparison diagram 4, the negative electrode of Organic Light Emitting Diode 72 is electrically connected to the drain electrode of N channel transistor 62.
Fig. 3 B-3C, Fig. 4, Fig. 5 are driving component with single Nonvolatile memory all, regulate the brightness of pixel cell by changing its starting potential.Yet, control respectively for static state being shown with dynamic the demonstration, can also arrange in pairs or groups thin film transistor (TFT) as driving component by Nonvolatile memory, please refer to the explanation of the following example.
Please refer to Fig. 6, is for pixel cell of the present invention is applied in the LCD, and it can control static the demonstration and dynamically demonstration respectively.Comparison diagram 2A, pixel cell more than 80 sweep trace 82 and a thin film transistor (TFT) 84.Data line 21 connects the source electrode of thin film transistor (TFT) 84 and Nonvolatile memory 33.Sweep trace 22 is electrically connected to the grid of Nonvolatile memory 33.Sweep trace 82 is electrically connected to the grid of thin film transistor (TFT) 84.The drain electrode of thin film transistor (TFT) 84 and Nonvolatile memory 33 all electrically connects with storage capacitors 24.
Under general modfel, the operating voltage of pixel cell 80 is shown by thin film transistor (TFT) 84 control chart pictures.Especially, when showing still image, can change by Nonvolatile memory 33 and control the operating voltage of pixel cells 80 to switch to static battery saving mode.
In organic electro-luminescent display, the static demonstration with dynamic demonstration also can be controlled respectively in addition.
Please refer to Fig. 7 A, comparison diagram 3A simultaneously, pixel cell more than 90 sweep trace 92 and a switching transistor 94.Data line 31 connects the source electrode of switching transistor 94 and Nonvolatile memory 33.Sweep trace 92 is electrically connected to the grid of switching transistor 94.Source/the drain electrode of switching transistor 94 and the source/drain electrode of Nonvolatile memory 33 are connected to the grid and the storage capacitors 34 of driving transistors 35 (P raceway groove) jointly.The anode of Organic Light Emitting Diode 36 is the drain electrodes that are electrically connected to driving transistors 35.Thus, under general modfel, the operation current potential of pixel cell 90 by switching transistor 94 with the control chart picture.But when showing still image, can change by Nonvolatile memory 33 and control the operation current potential of pixel cells 90 to switch to static battery saving mode.
Similarly, Fig. 7 A driving transistors 35 also can change the N channel transistor into, please refer to Fig. 7 B-7C.In pixel cell 100, the negative electrode of Organic Light Emitting Diode 104 is the drain electrodes that are electrically connected to N channel thin-film transistor 102, forms anti-phase type framework.In pixel cell 110, the anode of Organic Light Emitting Diode 114 is the source electrodes that are electrically connected to N channel thin-film transistor 112.
In the present invention, thin film transistor (TFT) can adopt amorphous silicon (α-Si) or low temperature polycrystalline silicon (LTPS) processing procedure.For fear of the high-temperature oxydation processing procedure glass substrate is damaged, can be lower than under 650 ℃ the temperature, use the oxide layer in the PECVD deposition Nonvolatile memory.
More than the common trait of all embodiment be, pixel cell comprises that at least one Nonvolatile memory, at least one sweep trace are electrically connected to the source electrode that the grid of this Nonvolatile memory, at least one data line are electrically connected to this Nonvolatile memory, and at least one electric capacity is electrically connected to the drain electrode of this Nonvolatile memory.
Under general modfel, this Nonvolatile memory has one first starting potential, stores current potential so that this electric capacity has one first.When desiring to switch to static battery saving mode, carry out with the following step.At first, provide between grid that a voltage is worse than this Nonvolatile memory and the source/drain electrode with this first starting potential of erasing.Similarly, provide between grid that a voltage is worse than this Nonvolatile memory and the source/drain electrode to write one second starting potential, to replace this first starting potential in this Nonvolatile memory; The grid of scan voltage in this Nonvolatile memory is provided again, stores current potential to define one second of this electric capacity by the difference of this scanning voltage and this second starting potential; And, the source/drain electrode of a data voltage in this Nonvolatile memory is provided, with to this electric capacity charging, make this first storage current potential change into this second storage current potential.
Hold above-mentionedly,,, can do the demonstration of multiple color so the storage current potential of storage capacitors 24 is also inequality because in each pixel cell, the starting potential of Nonvolatile memory 23 is all inequality.In addition, each pixel cell only can replace the function of static random access memory with a Nonvolatile memory.Because each Nonvolatile memory is made of two transistors usually, but static random access memory then comprises six to eight transistors, therefore required transistor size is less, so can improve the aperture opening ratio of pixel cell.
Please refer to Fig. 8, is the sequential control figure for tableaux.In interval I, when switching to static battery saving mode, can provide scan voltage with replacement electric capacity current potential by general modfel.At interval I I, provide a data voltage in order to display frame.
Please refer to Fig. 9, is power consumption (power consumption) curve for chip for driving.Transverse axis is input voltage (V); The longitudinal axis is power consumption (mW).When input voltage between the 3.0V to 3.6V the time, power consumption is between 40mW to 60mW.
Please refer to Figure 10, be relation curve, and calculate the electric power of being saved in view of the above for power consumption and panel clear zone ratio.Transverse axis is a panel clear zone ratio among the figure; The left side longitudinal axis is power consumption (mW); The right side longitudinal axis is for saving electric power (%).The clear zone ratio of organic electroluminescence panel is assumed to be static demonstration when 1/3-1/4, the power that Organic Light Emitting Diode consumed is 240mW to 180mW, and the power consumption of then using circuit design of the present invention can save chip for driving is 40mW to 60mW.
Above-listed detailed description is at the specifying of preferred embodiment of the present invention, and only the foregoing description is not in order to limiting claim of the present invention, does not allly break away from the equivalence that skill spirit of the present invention does and implements or change, all should be contained in the claim of this case.
Claims (25)
1. the pixel cell of a flat-panel screens comprises:
At least one Nonvolatile memory;
At least one sweep trace is electrically connected to the grid of this Nonvolatile memory;
At least one data line is electrically connected to the source electrode of this Nonvolatile memory; And
At least one storage capacitors is electrically connected to the drain electrode of this Nonvolatile memory.
2. pixel cell as claimed in claim 1 comprise that more a pixel electrode is electrically connected to this storage capacitors, and this pixel electrode is to be contacted with a liquid crystal layer.
3. pixel cell as claimed in claim 1 more comprises:
At least one thin film transistor (TFT), it has the drain electrode that a grid is electrically connected to this storage capacitors and this Nonvolatile memory; And
At least one Organic Light Emitting Diode, be electrically connected to the drain electrode of this thin film transistor (TFT) and source electrode the two one of.
4. pixel cell as claimed in claim 3, wherein, this thin film transistor (TFT) is to be a P channel thin-film transistor.
5. pixel cell as claimed in claim 3, wherein, this thin film transistor (TFT) is to be a N channel thin-film transistor.
6. pixel cell as claimed in claim 4, wherein, the anode of this Organic Light Emitting Diode is the drain electrode that is electrically connected to this P channel thin-film transistor.
7. pixel cell as claimed in claim 5, wherein, the negative electrode of this Organic Light Emitting Diode is the drain electrode that is electrically connected to this N channel thin-film transistor.
8. pixel cell as claimed in claim 5, wherein, the anode of this Organic Light Emitting Diode is the source electrode that is electrically connected to this N channel thin-film transistor.
9. pixel cell as claimed in claim 1 more comprises:
At least one thin film transistor (TFT) has the drain electrode that a grid is electrically connected to this storage capacitors and this Nonvolatile memory; And
A plurality of Organic Light Emitting Diodes, be electrically connected to the drain electrode of this thin film transistor (TFT) and source electrode the two one of, and respectively this Organic Light Emitting Diode is mutual series connection.
10. pixel cell as claimed in claim 1 more comprises:
At least one thin film transistor (TFT) has the drain electrode that a grid is electrically connected to this storage capacitors and this Nonvolatile memory; And
A plurality of Organic Light Emitting Diodes, be electrically connected to the drain electrode of this thin film transistor (TFT) and source electrode the two one of, and respectively this Organic Light Emitting Diode is mutual parallel connection.
11. the pixel cell of a flat-panel screens comprises:
At least one thin film transistor (TFT);
At least one first sweep trace is electrically connected to the grid of this thin film transistor (TFT);
At least one Nonvolatile memory;
At least one second sweep trace is electrically connected to the grid of this Nonvolatile memory;
At least one data line is electrically connected to the source electrode of this thin film transistor (TFT) and this Nonvolatile memory; And
At least one storage capacitors is electrically connected to the drain electrode of this thin film transistor (TFT) and this Nonvolatile memory.
12. pixel cell as claimed in claim 11 comprise that more a pixel electrode is electrically connected to this electric capacity, and this pixel electrode is to be contacted with a liquid crystal layer.
13. pixel cell as claimed in claim 11 more comprises:
At least one second thin film transistor (TFT) has the drain electrode that a grid is electrically connected to this storage capacitors and this Nonvolatile memory; And
At least one Organic Light Emitting Diode, be electrically connected to the drain electrode of this second thin film transistor (TFT) and source electrode the two one of.
14. pixel cell as claimed in claim 13, wherein, this second thin film transistor (TFT) is to be a P channel thin-film transistor.
15. pixel cell as claimed in claim 13, wherein, this second thin film transistor (TFT) is to be a N channel thin-film transistor.
16. pixel cell as claimed in claim 14, wherein, the anode of this Organic Light Emitting Diode is the drain electrode that is electrically connected to this P channel thin-film transistor.
17. pixel cell as claimed in claim 15, wherein, the negative electrode of this Organic Light Emitting Diode is the drain electrode that is electrically connected to this N channel thin-film transistor.
18. pixel cell as claimed in claim 15, wherein, the anode of this Organic Light Emitting Diode is the source electrode that is electrically connected to this N channel thin-film transistor.
19. pixel cell as claimed in claim 11 more comprises:
At least one second thin film transistor (TFT) has the drain electrode that a grid is electrically connected to this storage capacitors and this Nonvolatile memory; And
A plurality of Organic Light Emitting Diodes, be electrically connected to the drain electrode of this thin film transistor (TFT) and source electrode the two one of, and respectively this Organic Light Emitting Diode is mutual series connection.
20. pixel cell as claimed in claim 11 more comprises:
At least one second thin film transistor (TFT) has the drain electrode that a grid is electrically connected to this storage capacitors and this Nonvolatile memory; And
A plurality of Organic Light Emitting Diodes, be electrically connected to the drain electrode of this thin film transistor (TFT) and source electrode the two one of, and respectively this Organic Light Emitting Diode is mutual parallel connection.
21. the driving method of a pixel cell, this pixel cell comprises that at least one Nonvolatile memory electrically connects at least one storage capacitors, and wherein, this Nonvolatile memory has one first starting potential, store current potential so that this storage capacitors has one first, this method comprises:
Write one second starting potential in this Nonvolatile memory, to replace this first starting potential;
The grid of scan voltage in this Nonvolatile memory is provided, stores current potential to define one second of this storage capacitors by the difference of this scanning voltage and this second starting potential; And
Source/the drain electrode of one data voltage in this Nonvolatile memory is provided,, makes this first storage current potential change into this second storage current potential with to this storage capacitors charging.
22. driving method as claimed in claim 21, wherein, the above-mentioned step that writes this second starting potential more comprises:
Provide between the grid and source/drain electrode that a voltage is worse than this Nonvolatile memory.
23. driving method as claimed in claim 21, wherein, this data voltage is greater than this scanning voltage.
24. driving method as claimed in claim 21 more comprises and erased this first starting potential before writing this second starting potential.
25. driving method as claimed in claim 24, wherein, above-mentioned step of erasing this first starting potential is to comprise:
Provide between the grid and source/drain electrode that a voltage is worse than this Nonvolatile memory.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107479289A (en) * | 2017-09-13 | 2017-12-15 | 深圳市华星光电技术有限公司 | Image element structure and array base palte |
| WO2021109288A1 (en) * | 2019-12-04 | 2021-06-10 | 深圳市华星光电半导体显示技术有限公司 | Pixel driving circuit and driving method therefor and display panel using same |
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| US6577531B2 (en) * | 2000-04-27 | 2003-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and semiconductor device |
| CN1224104C (en) * | 2001-05-16 | 2005-10-19 | 华邦电子股份有限公司 | Non-volatility memory and making technology thereof |
| TW559814B (en) * | 2001-05-31 | 2003-11-01 | Semiconductor Energy Lab | Nonvolatile memory and method of driving the same |
| GB0130411D0 (en) * | 2001-12-20 | 2002-02-06 | Koninkl Philips Electronics Nv | Active matrix electroluminescent display device |
| JP4119198B2 (en) * | 2002-08-09 | 2008-07-16 | 株式会社日立製作所 | Image display device and image display module |
| US7298355B2 (en) * | 2002-12-27 | 2007-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US6870196B2 (en) * | 2003-03-19 | 2005-03-22 | Eastman Kodak Company | Series/parallel OLED light source |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107479289A (en) * | 2017-09-13 | 2017-12-15 | 深圳市华星光电技术有限公司 | Image element structure and array base palte |
| CN107479289B (en) * | 2017-09-13 | 2020-06-05 | 深圳市华星光电技术有限公司 | Pixel structure and array substrate |
| WO2021109288A1 (en) * | 2019-12-04 | 2021-06-10 | 深圳市华星光电半导体显示技术有限公司 | Pixel driving circuit and driving method therefor and display panel using same |
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| CN100433087C (en) | 2008-11-12 |
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