CN107479289A - Image element structure and array base palte - Google Patents
Image element structure and array base palte Download PDFInfo
- Publication number
- CN107479289A CN107479289A CN201710822527.6A CN201710822527A CN107479289A CN 107479289 A CN107479289 A CN 107479289A CN 201710822527 A CN201710822527 A CN 201710822527A CN 107479289 A CN107479289 A CN 107479289A
- Authority
- CN
- China
- Prior art keywords
- voltage
- scan line
- tft
- mentioned
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 32
- 239000003990 capacitor Substances 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 230000005611 electricity Effects 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Power Engineering (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The embodiment of the invention discloses a kind of image element structure and array base palte, the image element structure includes：Pixel cell, data wire and the first scan line；The pixel cell includes thin film transistor (TFT) TFT and pixel electrode；The grid of the TFT electrically connects with first scan line；One end in the drain electrode and source electrode of the TFT electrically connects with the data wire, and the other end electrically connects with the pixel electrode；Liquid crystal capacitance is formed between the pixel electrode and public electrode；Storage capacitors are formed between the pixel electrode and the second scan line, second scan line is next scan line of first scan line.After the TFT is opened, the data wire charges to the pixel electrode, and during charging, the driving voltage in second scan line is adjusted to second voltage from first voltage.Implement the embodiment of the present invention, charging performance can be improved, improve display effect.
Description
Technical field
The present invention relates to technical field of liquid crystal display, and in particular to a kind of image element structure and array base palte.
Background technology
In current information-intensive society, Thin Film Transistor-LCD (Thin Film Transistor-Liquid
Crystal Display, TFT LCD) various aspects of our lives are had been widely used for, mobile phone, shooting from small size
Machine, digital camera, notebook computer, the desktop computer of middle size, large-sized domestic TV to large-scale projector equipment etc., TFT
LCD is on the basis of light, thin advantage, plus perfect picture and quick response characteristic, it is ensured that it is only on monitor market
Tower above the rest.
In active matrix liquid crystal display device (Liquid Crystal Display, LCD), each pixel has one
Individual thin film transistor (TFT) (Thin Film Transistor, TFT), its grid are connected to the scan line of horizontal direction, drain electrode connection
To the data wire of vertical direction, and source electrode is then connected to pixel electrode.In same scan line in the horizontal direction, because all
TFT grid all links together, so the voltage applied is to interlock；If apply sufficiently large positive electricity in a certain bar scan line
Pressure, then TFT all in this scan line can all be opened；The now pixel electrode in this scan line, meeting and vertical direction
Data wire connection, via data wire be sent into corresponding to vision signal, pixel electrode is charged to appropriate voltage；Then apply
Add sufficiently large negative voltage, close TFT, re-write signal again until next time, therebetween electric charge is stored on liquid crystal capacitance.
Now restart next horizontal scanning line, be sent into its corresponding vision signal.So sequentially by the video data of whole picture
Write-in, then signal is re-write from first again, the pel array in liquid crystal panel is as shown in Figure 1.
The resolution ratio of full HD liquid crystal panel is usually 1920*1080, in the case where picture refreshing frequency is 60Hz, often
The opening time of one horizontal scanning line is about 1/ (60*1080) ≈ 15.4ms.More much bigger, the resolution ratio with the size of liquid crystal panel
The more do the more high, the opening time of each horizontal scanning line can be further compressed, and thus may trigger liquid crystal panel undercharge
The occurrence of.In fact, in order to avoid pixel potential mistake is filled, the write time of picture element signal would generally be than the unlatching of scan line
The occurrence of time is shorter, and this will aggravate liquid crystal panel undercharge, as shown in Fig. 2 wherein, when t1 is the unlatching of scan line
Between, t2 is the write time of picture element signal.
The usual means to solve the above problems be the line width for increasing scan line and data wire to improve the situation of undercharge,
But this way can lose the aperture opening ratio of picture element, the penetrance of liquid crystal panel is reduced.
The content of the invention
The embodiment of the present invention provides a kind of image element structure and array base palte, can improve charging performance, improves display effect.
First aspect of the embodiment of the present invention provides a kind of image element structure, including：
Pixel cell, data wire and the first scan line；The pixel cell includes thin film transistor (TFT) TFT and pixel electricity
Pole；
The grid of the TFT electrically connects with first scan line；One end in the drain electrode and source electrode of the TFT with it is described
Data wire electrically connects, and the other end electrically connects with the pixel electrode；Liquid crystal electricity is formed between the pixel electrode and public electrode
Hold；Storage capacitors are formed between the pixel electrode and the second scan line, second scan line is first scan line
Next scan line；
First scan line be applied to the TFT voltage exceed starting voltage after, the source electrode of the TFT and described
The passage of conducting is formed between TFT drain electrode；The data wire is in the first duration after the passage is formed by described logical
The pixel electrode is charged in road；First duration is divided into the second duration and the 3rd duration sequentially in time, in institute
State second scan line in the second duration and be maintained at first voltage, second scan line is maintained in the 3rd duration
Second voltage, the first voltage are below or above the second voltage, and the second voltage is to close the voltage of the TFT；
The source electrode and drain electrode that the starting voltage is the TFT turn on required minimum voltage.
Second aspect of the embodiment of the present invention provides a kind of array base palte, including the image element structure described in first aspect.
The third aspect of the embodiment of the present invention provides a kind of charging method, and methods described is applied to image element structure, the picture
Plain structure includes：Pixel cell, data wire and the first scan line；The pixel cell includes thin film transistor (TFT) TFT, pixel electricity
Pole, liquid crystal capacitance and storage capacitors；
The grid of the TFT is connected with first scan line, and the drain electrode of the TFT is connected with the data wire, described
TFT source electrode is connected with the pixel electrode；One end of the liquid crystal capacitance connects the pixel electrode, and other end connection is public
Electrode；One end of the storage capacitors connects the pixel electrode, and the other end connects the second scan line, and second scan line is
Next scan line of first scan line；
The charging method includes：
First scan line be applied to the TFT voltage exceed starting voltage after, the source electrode of the TFT and described
The passage of conducting is formed between TFT drain electrode；The data wire is in the first duration after the passage is formed by described logical
The pixel electrode is charged in road；First duration is divided into the second duration and the 3rd duration sequentially in time, in institute
State second scan line in the second duration and be maintained at first voltage, second scan line is maintained in the 3rd duration
Second voltage, the first voltage are below or above the second voltage, and the second voltage is to close the voltage of the TFT；
The source electrode and drain electrode that the starting voltage is the TFT turn on required minimum voltage.
In the embodiment of the present invention, the pole plate using the N+1 articles scan line as the storage capacitors in the N articles scan line, pass through
Control the N+1 articles scan line to be applied to TFT voltage, charging current during TFT openings can be improved, improve charging property
Energy.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is a kind of structural representation of pel array disclosed in the embodiment of the present invention；
Fig. 2 is a kind of schematic diagram of scan line opening time and pixel write time disclosed in the embodiment of the present invention；
Fig. 3 is a kind of equivalent circuit diagram of disclosed image element structure in the prior art；
Fig. 4 is a kind of equivalent circuit diagram of image element structure disclosed in the embodiment of the present invention；
Fig. 5 is a kind of oscillogram of the driving voltage in scan line disclosed in the embodiment of the present invention；
Fig. 6 is the oscillogram of the driving voltage in another scan line disclosed in the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in embodiment of the present invention, the technical scheme in embodiment of the present invention is carried out clear
Chu, it is fully described by.Obviously, described embodiment is a part of embodiment of the present invention, rather than whole embodiment party
Formula.Based on the embodiment in the present invention, those of ordinary skill in the art are obtained on the premise of creative work is not made
The every other embodiment obtained, should all belong to the scope of protection of the invention.
In addition, the explanation of following embodiment is with reference to additional diagram, the spy implemented to illustrate the present invention can be used to
Determine embodiment.The direction term being previously mentioned in the present invention, for example, " on ", " under ", "front", "rear", "left", "right", " interior ",
" outer ", " side " etc., only it is the direction with reference to annexed drawings, therefore, the direction term used is to more preferably, more clearly say
It is bright and understand the present invention, rather than instruction or infer the device of meaning or element and must have specific orientation, with specific side
Position construction and operation, therefore be not considered as limiting the invention.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or detachably connected, or integratedly be connected
Connect；Can mechanically connect；Can be joined directly together, can also be indirectly connected by intermediary, can be in two elements
The connection in portion.For the ordinary skill in the art, the tool of above-mentioned term in the present invention can be understood with concrete condition
Body implication.
In addition, in the description of the invention, unless otherwise indicated, " multiple " are meant that two or more.If this
Occurring the term of " process " in specification, it refers not only to independent process, when can not clearly be distinguished with other processes, as long as
It can realize that the effect desired by above-mentioned operation is then also included within this term.In addition, the numerical value represented in this specification with "~"
Scope refers to the scope that "~" front and rear numerical value recorded is included as minimum value and maximum.In the accompanying drawings, tie
The similar or identical unit of structure is indicated by the same numeral.
The embodiment of the present invention provides a kind of image element structure, can improve charging performance, improves display effect.Enter individually below
Row describes in detail.
Referring to Fig. 3, Fig. 3 is a kind of equivalent circuit diagram of image element structure of the prior art.As shown in figure 3, this implementation
Image element structure described in example, including：Pixel cell 30, data wire 31 and scan line 32；Above-mentioned pixel cell 30 includes
Thin film transistor (TFT) TFT301 and pixel electrode 302；Above-mentioned TFT grid 3011 electrically connects with above-mentioned scan line 32, above-mentioned TFT's
Drain electrode 3012 electrically connects with above-mentioned data wire 31, and above-mentioned TFT source electrode 3013 electrically connects with pixel electrodes 302；Above-mentioned picture
Liquid crystal capacitance 303 is formed between plain electrode 302 and public electrode 33；Shape between pixel electrodes 302 and public electrode wire 34
Into storage capacitors 304.The voltage of above-mentioned public electrode is public electrode voltages (Vcom), also referred to as " common electric voltage ".Above-mentioned picture
Plain electrode 302 is located on different glass from above-mentioned public electrode 33, pixel electrodes 302 and above-mentioned public electrode wire 34
In same glass.It is appreciated that above-mentioned public electrode 33 and above-mentioned public electrode wire 34 are located on different glass.It is above-mentioned public
The voltage of electrode and above-mentioned public electrode wire can be with identical.In this image element structure, storage capacitors one end connection public electrode
Line, on the one hand increase the cabling of public electrode wire, improve the aperture opening ratio of picture element；On the other hand the voltage of this one end can only be constant,
It can not be adjusted.
Referring to Fig. 4, Fig. 4 is a kind of equivalent circuit diagram of image element structure disclosed in the embodiment of the present invention.As shown in figure 4,
Image element structure described in the present embodiment, including：Pixel cell 40, the scan line 42 of data wire 41 and first；Above-mentioned pixel
Unit 40 includes thin film transistor (TFT) TFT401 and pixel electrode 402；Above-mentioned TFT grid 4011 and the above-mentioned electricity of first scan line 42
Connection；One end 4012 in above-mentioned TFT drain electrode and source electrode electrically connects with above-mentioned data wire 41, the other end 4013 and above-mentioned pixel
Electrode 402 electrically connects；Liquid crystal capacitance 403 is formed between pixel electrodes 402 and public electrode；Pixel electrodes 402 with
Storage capacitors 404 are formed between second scan line, above-mentioned second scan line is next scan line of above-mentioned first scan line 42.
Triangular representation public electrode in Fig. 4, circle represent the second scan line.It is appreciated that in the embodiment of the present invention, TFT can be with
Using two kinds of connected modes, a kind of connected mode is TFT source electrode connection data wire, and drain electrode connects pixel electrode, i.e., in figure
4012 be TFT source electrode, and 4013 be drain electrode；Another connected mode is TFT drain electrode connection data wire, and source electrode connection pixel is electric
In pole, i.e. figure 4012 be TFT drain electrode, 4013 be source electrode.TFT in the embodiment of the present invention can use any connection side
Formula.The voltage of above-mentioned public electrode is public electrode voltages (Vcom), also referred to as " common electric voltage ".It is provided in an embodiment of the present invention
Storage capacitors are not required to connect public electrode wire in image element structure, it is possible to reduce the cabling of public electrode wire, improve the opening of picture element
Rate.
The executable charging operations of the public image element structure of the embodiment of the present invention are as follows：Apply in above-mentioned first scan line 42
After above-mentioned TFT401 voltage exceedes starting voltage, the passage of conducting is formed between above-mentioned TFT401 source electrode and drain electrode；On
Data wire 41 is stated to charge to pixel electrodes 40 by above-mentioned passage in the first duration after above-mentioned passage is formed；On
State the first duration and be divided into the second duration and the 3rd duration sequentially in time, above-mentioned second scan line is protected in above-mentioned second duration
Hold in first voltage, above-mentioned second scan line is maintained at second voltage in above-mentioned 3rd duration, above-mentioned first voltage be less than or
Higher than above-mentioned second voltage, above-mentioned second voltage is to close above-mentioned TFT401 voltage；Above-mentioned starting voltage is above-mentioned TFT source
Minimum voltage needed for pole and drain electrode conducting.
Because above-mentioned first scan line 42 electrically connects with above-mentioned TFT grid 4011, above-mentioned first scan line 42 is applied to
Above-mentioned TFT401 voltage is the driving voltage in above-mentioned first scan line 42.Above-mentioned first scan line 42 is applied to above-mentioned
The situation that TF401T voltage exceedes starting voltage can be that the driving voltage in above-mentioned first scan line 42 exceedes above-mentioned starting
Voltage.It is appreciated that above-mentioned first scan line 42 controls above-mentioned TFT opening and closing in the presence of driving voltage.Citing
For, if the magnitude of voltage of the driving voltage in the first scan line exceedes starting voltage, TFT is opened, i.e. the drain electrode of the TFT and source
Pole turns on.Again for example, in the case where TFT is in opening, if the magnitude of voltage of the driving voltage in the first scan line
Less than starting voltage, then TFT closings, i.e., the passage between the drain electrode of the TFT and source electrode disconnects.Again for example, at TFT
In the case of closed mode, if the magnitude of voltage of the driving voltage in the first scan line is less than starting voltage, the TFT keeps closing
Passage open circuit between the drain electrode of closed state, the i.e. TFT and source electrode.After above-mentioned TFT401 is opened, above-mentioned data wire 41 can be with
Write corresponding signal to above-mentioned liquid crystal capacitance 403, after above-mentioned TFT401 is closed, above-mentioned TFT can anti-stop signal from above-mentioned
Liquid crystal capacitance 403 is revealed.Because TFT is opened, i.e. TFT source electrode and TFT drain electrode conducting, the time of consumption is very short, can recognize
After exceeding starting voltage for the driving voltage in above-mentioned first scan line, above-mentioned data wire 41 enters to pixel electrodes 40 immediately
Row charging.The passage that conducting is formed between above-mentioned TFT401 source electrode and drain electrode can be that a-Si passages induce electronics so that
Above-mentioned TFT401 source electrode and drain electrode turn on.The total duration of a length of charging when above-mentioned first, above-mentioned second duration and the above-mentioned 3rd
Duration forms above-mentioned first duration.For example, a length of first second to the 5th second when first, a length of first second to the 3rd second when second,
A length of 3rd second to the 5th second when the 3rd.Above-mentioned second scan line is maintained at first voltage in above-mentioned second duration, above-mentioned
It can be driving voltage in above-mentioned second scan line above-mentioned that above-mentioned second scan line, which is maintained at second voltage, in 3rd duration
It is above-mentioned first voltage in second duration, is above-mentioned second voltage in above-mentioned 3rd duration.It is appreciated that above-mentioned second scanning
Driving voltage on line is different with the magnitude of voltage in above-mentioned 3rd duration in above-mentioned second duration.Ripple in Fig. 5 lower half figure
Shape is waveform corresponding to the driving voltage in the second scan line, and as shown in Fig. 5 lower half figure, t2 represents the second duration, and t3 is represented
3rd duration, driving voltage is V2, i.e. first voltage during t2, and driving voltage is V1, i.e. second voltage during t3, and V1 is big
In V2.Waveform in Fig. 6 lower half figure is waveform corresponding to the driving voltage in the second scan line, as shown in Fig. 6 lower half figure,
T5 represents the second duration, and t6 represents the 3rd duration, and driving voltage is V4, i.e. first voltage during t5, and electricity is driven during t6
Press and be less than V4 for V1, i.e. second voltage, V1.
In currently employed scheme, one end connection public electrode of storage capacitance, the voltage of this one end keeps constant.This
In inventive embodiments, one end of storage capacitance connects the second scan line, and the driving on the voltage of this one end and the second scan line is electric
Press identical, can improve charging rate of the data wire to pixel electrode by controlling the driving voltage, improve charging performance.
Because liquid crystal molecule can not be under same voltage for a long time, otherwise liquid crystal molecule can be because the change of characteristic, nothing
Method deflects under electric field action.In order to prevent liquid crystal molecule characteristic to be destroyed, liquid crystal panel uses the driving of polarity inversion
Mode is shown.The voltage (voltage of pixel electrode, referred to as " pixel voltage ") point of pixel electrode in liquid crystal display
For two kinds of polarity, one is positive polarity, and another is negative polarity.When pixel voltage is higher than common electric voltage Vcom, just it is referred to as
For positive polarity.And when pixel voltage is less than common electric voltage (Vcom), just referred to as negative polarity.In the embodiment of the present invention, pixel
Electrode is also driven by the way of polarity inversion, i.e. positive polarity and negative polarity checker.
In the case of voltage of the voltage of pixel electrodes less than above-mentioned public electrode, above-mentioned first voltage is less than upper
State second voltage.That is, when the voltage of pixel electrode is negative polarity, above-mentioned first voltage is less than above-mentioned second voltage.
Before above-mentioned passage is formed, above-mentioned second scan line is applied to above-mentioned TFT voltage and is adjusted to above-mentioned the from above-mentioned second voltage
One voltage.It is a concrete example of the embodiment of the present invention below：The voltage of pixel electrode is 1V, source potential 1V, is drained
Current potential is 14V, public electrode 7V, as shown in figure 5, V1 is TFT closing voltage, i.e. second voltage, V1=-6V, V3 TFT
Cut-in voltage, V3=33V, V2 are first voltage, and V2 is less than V1.Before above-mentioned TFT unlatchings, i.e., form it in above-mentioned passage
Before, the voltage that above-mentioned second scan line is applied to above-mentioned TFT is adjusted to above-mentioned first voltage from above-mentioned second voltage, can from Fig. 5
To find out before above-mentioned TFT unlatchings, i.e., before the driving voltage in the first scan line switchs to V3 from V1, in the second scan line
It is t1 that driving voltage switchs to V2 and duration from V1；In the second duration after TFT unlatchings, i.e., in the t2 times, second sweeps
The upper driving voltage for retouching line is maintained at V2；In the 3rd duration, i.e., in the t3 times, the upper driving voltage of the second scan line is protected
Hold in V1.It is appreciated that the driving voltage in the second scan line is reduced to V2 time point and the drive in the first scan line from V1
Dynamic voltage from the time interval that V1 was improved to V3 time point be t1.Within the t1 times, TFT is closed, the second scanning
Driving voltage on line drops to V2 from V1, that is, the voltage for being applied to storage capacitors drops to V2, due to storage capacitors and liquid crystal
The coupling of electric capacity, the voltage of pixel electrode can decline △ V1, i.e., drop to (1- △ V1) V from 1V.After TFT unlatchings,
The driving voltage of second scan line maintains V2 and the duration is t2, and now TFT source voltage is (1- △ V1) V, drain electrode
Voltage be 14V, potential difference between the two is changed into (13+ △ V1) V from initial 13V, and the increase of potential difference is favorably improved
Data wire improves the charging performance of image element structure to the charging current of pixel electrode.Driving voltage in the second scan line is protected
Hold after V2 duration reaches t1+t2, the driving voltage in the second scan line rises to V1 and the duration is t3.It can manage
Solution, is faster charge time in t2, the electric current of this period of time is larger；T3 is normal charging period, and this for a period of time can be right
The voltage of pixel electrode is modified.In the embodiment of the present invention, only limit first voltage and be less than second voltage, do not make other limits
It is fixed.Driving voltage in second scan line is identical with the waveform of the driving voltage in the first scan line, and sequential is different.
In the embodiment of the present invention, in the case where the voltage of pixel electrode is negative polarity, by the electricity for adjusting storage capacitors
Pressure can improve charging rate of the data wire to pixel electrode, improve charging performance.
On the basis of previous embodiment, above-mentioned first scan line, it is additionally operable to close above-mentioned TFT in object time point, on
State the time point that object time point reaches above-mentioned first duration for the time that above-mentioned passage is formed；
Above-mentioned second scan line, it is additionally operable to open TFT corresponding to above-mentioned second scan line in above-mentioned object time point.
It can be the driving voltage in above-mentioned first scan line that above-mentioned first scan line closes above-mentioned TFT in object time point
It is reduced to above-mentioned second voltage.Above-mentioned second scan line opens TFT corresponding to above-mentioned second scan line in above-mentioned object time point
Can be that driving voltage in above-mentioned second scan line is improved to target voltage, above-mentioned target voltage is more than above-mentioned starting voltage.
Above-mentioned second scan line while the first scan line closes above-mentioned TFT or above-mentioned first scan line close above-mentioned TFT it
Moment afterwards, open TFT corresponding to above-mentioned second scan line.From fig. 5, it can be seen that be object time point at same time point, the
Driving voltage in scan line is reduced to V1 from V3, and the voltage in the second scan line is heightened as V3 from V1.
In the embodiment of the present invention, by opening TFT in time, the opening time of scan line can be saved.
On the basis of previous embodiment, the voltage that above-mentioned TFT is applied in above-mentioned second scan line is electric from above-mentioned second
Pressure is adjusted to before above-mentioned first voltage, and above-mentioned second scan line is maintained at above-mentioned second voltage.
It can be that the driving voltage in above-mentioned second scan line is kept that above-mentioned second scan line, which is maintained at above-mentioned second voltage,
In above-mentioned second voltage.Above-mentioned second scan line is maintained at above-mentioned second voltage, can effectively anti-stop signal from above-mentioned liquid crystal electricity
Hold and reveal, the driving voltage in above-mentioned second scan line need to only be maintained at above-mentioned second voltage, realize simple.
In the embodiment of the present invention, can effectively anti-stop signal revealed from liquid crystal capacitance, realize simple.
In the case of voltage of the voltage of pixel electrodes higher than above-mentioned public electrode, above-mentioned first voltage is higher than upper
State second voltage.That is, when the voltage of pixel electrode is positive polarity, above-mentioned first voltage is higher than above-mentioned second voltage.
Before above-mentioned passage is formed, above-mentioned second scan line is applied to above-mentioned TFT voltage and is adjusted to above-mentioned the from above-mentioned second voltage
One voltage.It is a concrete example of the embodiment of the present invention below：The voltage of pixel electrode is 14V, source potential 14V, is leaked
Electrode potential is 1V, public electrode 7V, as shown in fig. 6, V1 is TFT closing voltage, i.e. second voltage, V1=-6V, V3 is
TFT cut-in voltage, V3=33V, V4 are first voltage, and V4 is more than V1.Before above-mentioned TFT unlatchings, i.e., in above-mentioned passage shape
Into before, the voltage that above-mentioned second scan line is applied to above-mentioned TFT is adjusted to above-mentioned first voltage from above-mentioned second voltage, from figure
6 can be seen that before above-mentioned TFT unlatchings, i.e., before the driving voltage in the first scan line switchs to V3 from V1, the second scan line
On driving voltage to switch to V4 and duration from V1 be t4；In the second duration after TFT unlatchings, i.e., in the t5 times, the
The upper driving voltage of two scan lines is maintained at V4；In the 3rd duration, i.e., in the t6 times, the upper driving electricity of the second scan line
Pressure is maintained at V1.It is appreciated that the driving voltage in the second scan line is risen in V4 time point and the first scan line from V1
Driving voltage from the time interval that V1 was improved to V3 time point be t4.Within the t4 times, TFT is closed, and second
Driving voltage in scan line rises to V4 from V1, that is, the voltage for being applied to storage capacitors rises to V4, due to storage capacitors and
The coupling of liquid crystal capacitance, the voltage of pixel electrode can improve △ V1, i.e., rise to (14+ △ V1) V from 14V.Opened in TFT
Afterwards, the driving voltage of the second scan line maintains V4 and the duration is t5, and TFT source voltage is (14+ △ during this period
V1) V, the voltage of drain electrode are 1V, and potential difference between the two is changed into (13+ △ V1) V from initial 13V, and the increase of potential difference has
Help improve charging current of the data wire to pixel electrode, improve the charging performance of image element structure.Drive in the second scan line
Dynamic voltage be maintained at V4 duration reach t4+t5 after, the driving voltage in the second scan line drops to V1 and the duration is t6.
It is appreciated that it is faster charge time in t5, the electric current of this period of time is larger；T6 is normal charging period, this period of time
The voltage of pixel electrode can be modified.In the embodiment of the present invention, only limit first voltage and be higher than second voltage, do not make it
He limits.Driving voltage in second scan line is identical with the waveform of the driving voltage in the first scan line, and sequential is different.
In the embodiment of the present invention, in the case where the voltage of pixel electrode is positive polarity, by the electricity for adjusting storage capacitors
Pressure can improve charging rate of the data wire to pixel electrode, improve charging performance.
On the basis of previous embodiment, above-mentioned first scan line, it is additionally operable to close above-mentioned TFT in object time point, on
State the time point that object time point reaches above-mentioned first duration for the time that above-mentioned passage is formed；
Above-mentioned second scan line, it is additionally operable to open TFT corresponding to above-mentioned second scan line in above-mentioned object time point.
It can be the driving voltage in above-mentioned first scan line that above-mentioned first scan line closes above-mentioned TFT in object time point
It is reduced to above-mentioned second voltage.Above-mentioned second scan line opens TFT corresponding to above-mentioned second scan line in above-mentioned object time point
Can be that driving voltage in above-mentioned second scan line is improved to target voltage, above-mentioned target voltage is more than above-mentioned starting voltage.
Above-mentioned second scan line while the first scan line closes above-mentioned TFT or above-mentioned first scan line close above-mentioned TFT it
Moment afterwards, open TFT corresponding to above-mentioned second scan line.From fig. 6, it can be seen that be object time point at same time point,
Driving voltage in first scan line is reduced to V1 from V3, and the voltage in the second scan line is heightened as V3 from V1.
In the embodiment of the present invention, by opening TFT in time, the opening time of scan line can be saved.
On the basis of previous embodiment, the voltage that above-mentioned TFT is applied in above-mentioned second scan line is electric from above-mentioned second
Pressure is adjusted to before above-mentioned first voltage, and above-mentioned second scan line is maintained at above-mentioned second voltage.
It can be that the driving voltage in above-mentioned second scan line is kept that above-mentioned second scan line, which is maintained at above-mentioned second voltage,
In above-mentioned second voltage.Above-mentioned second scan line is maintained at above-mentioned second voltage, can effectively anti-stop signal from above-mentioned liquid crystal electricity
Hold and reveal, the driving voltage in above-mentioned second scan line need to only be maintained at above-mentioned second voltage, realize simple.
In the embodiment of the present invention, can effectively anti-stop signal revealed from liquid crystal capacitance, realize simple.
In the aforementioned embodiment, the charging process when voltage for respectively describing pixel electrode is positive polarity and be negative polarity
When charging process.In actual applications, because the voltage of data wire alternately changes so that the polarity of the voltage of pixel electrode is handed over
For conversion.For example, when the voltage of pixel electrode is negative polarity, the first scan line and the driving voltage in the second scan line
Waveform is as shown in figure 5, when the voltage of pixel electrode is positive polarity, and the driving voltage in the first scan line and the second scan line is as schemed
Shown in 6.Image element structure in embodiments of the present invention is alternately performed the charging operations and be in that pixel electrode is under positive polarity
Charging operations under negative polarity, charging rate can be improved.
A kind of array base palte is proposed in the embodiment of the present invention, comprising the image element structure in foregoing any embodiment, can be held
The foregoing any charging method of row.
The embodiments of the invention provide a kind of charging method, the above method is applied to image element structure, above-mentioned image element structure bag
Include：Pixel cell, data wire and the first scan line；Above-mentioned pixel cell includes thin film transistor (TFT) TFT and pixel electrode；
Above-mentioned TFT grid electrically connects with above-mentioned first scan line；One end in above-mentioned TFT drain electrode and source electrode with it is above-mentioned
Data wire electrically connects, and the other end electrically connects with pixel electrodes；Liquid crystal electricity is formed between pixel electrodes and public electrode
Hold；Storage capacitors are formed between pixel electrodes and the second scan line, above-mentioned second scan line is above-mentioned first scan line
Next scan line；
Above-mentioned charging method includes：
Above-mentioned first scan line be applied to above-mentioned TFT voltage exceed starting voltage after, above-mentioned TFT source electrode and above-mentioned
The passage of conducting is formed between TFT drain electrode；Above-mentioned data wire is in the first duration after above-mentioned passage is formed by above-mentioned logical
Pixel electrodes are charged in road；Above-mentioned first duration is divided into the second duration and the 3rd duration sequentially in time, upper
State above-mentioned second scan line in the second duration and be maintained at first voltage, above-mentioned second scan line is maintained in above-mentioned 3rd duration
Second voltage, above-mentioned first voltage are below or above above-mentioned second voltage, and above-mentioned second voltage is to close above-mentioned TFT voltage；
The source electrode and drain electrode that above-mentioned starting voltage is above-mentioned TFT turn on required minimum voltage.
In the embodiment of the present invention, the pole plate using the N+1 articles scan line as the storage capacitors in the N articles scan line, pass through
Control the N+1 articles scan line to be applied to TFT voltage, charging current during TFT openings can be improved, improve charging property
Energy.
The image element structure provided above the embodiment of the present invention is described in detail, specific case used herein
The principle and embodiment of the present invention are set forth, the explanation of above example is only intended to help the side for understanding the present invention
Method and its core concept；Meanwhile for those of ordinary skill in the art, according to the thought of the present invention, in embodiment
And there will be changes in application, to sum up above-mentioned, this specification content should not be construed as limiting the invention.
Claims (10)
- A kind of 1. image element structure, it is characterised in that including：Pixel cell, data wire and the first scan line；The pixel cell includes thin film transistor (TFT) TFT and pixel electrode；The grid of the TFT electrically connects with first scan line；One end and the data in the drain electrode and source electrode of the TFT Line electrically connects, and the other end electrically connects with the pixel electrode；Liquid crystal capacitance is formed between the pixel electrode and public electrode；Institute State and storage capacitors are formed between pixel electrode and the second scan line, second scan line is next of first scan line Scan line；First scan line be applied to the TFT voltage exceed starting voltage after, the source electrode of the TFT and the TFT Drain electrode between form the passage of conducting；The data wire is in the first duration after the passage is formed by the passage pair The pixel electrode is charged；First duration is divided into the second duration and the 3rd duration sequentially in time, described Second scan line is maintained at first voltage in two durations, and second scan line is maintained at second in the 3rd duration Voltage, the first voltage are below or above the second voltage, and the second voltage is to close the voltage of the TFT；It is described The source electrode and drain electrode that starting voltage is the TFT turn on required minimum voltage.
- 2. image element structure according to claim 1, it is characterised in thatIn the case of voltage of the voltage of the pixel electrode less than the public electrode, the first voltage is less than described the Two voltages.
- 3. image element structure according to claim 2, it is characterised in thatBefore passage formation, the voltage that second scan line is applied to the TFT is adjusted to from the second voltage The first voltage.
- 4. according to the image element structure described in claims 1 to 3 any one, it is characterised in thatFirst scan line, it is additionally operable to close the TFT in object time point, the object time point is that the passage is formed Time reach time point of first duration；Second scan line, it is additionally operable to open TFT corresponding to second scan line in the object time point.
- 5. image element structure according to claim 4, it is characterised in that be applied to the TFT's in second scan line Before voltage is adjusted to the first voltage from the second voltage, second scan line is maintained at the second voltage.
- 6. image element structure according to claim 1, it is characterised in thatIn the case of voltage of the voltage of the pixel electrode higher than the public electrode, the first voltage is higher than described the Two voltages.
- 7. image element structure according to claim 6, it is characterised in thatBefore passage formation, the voltage that second scan line is applied to the TFT is adjusted to from the second voltage The first voltage.
- 8. the image element structure according to claim 6 or 7, it is characterised in thatFirst scan line, it is additionally operable to close the TFT in object time point, the object time point is that the passage is formed Time reach time point of first duration；Second scan line, it is additionally operable to open TFT corresponding to second scan line in the object time point.
- 9. image element structure according to claim 8, it is characterised in that second scan line is applied to the electricity of the TFT Before pressure is adjusted to the first voltage from the second voltage, second scan line is maintained at the second voltage.
- 10. a kind of array base palte, it is characterised in that include any image element structure described in claim 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710822527.6A CN107479289B (en) | 2017-09-13 | 2017-09-13 | Pixel structure and array substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710822527.6A CN107479289B (en) | 2017-09-13 | 2017-09-13 | Pixel structure and array substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107479289A true CN107479289A (en) | 2017-12-15 |
| CN107479289B CN107479289B (en) | 2020-06-05 |
Family
ID=60584240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710822527.6A Active CN107479289B (en) | 2017-09-13 | 2017-09-13 | Pixel structure and array substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107479289B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106597715A (en) * | 2017-02-06 | 2017-04-26 | 京东方科技集团股份有限公司 | Sub-pixel unit, display device and driving method for display device |
| CN113655648A (en) * | 2020-05-12 | 2021-11-16 | 立景光电股份有限公司 | Liquid crystal on silicon panel and projection equipment |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11344959A (en) * | 1998-06-03 | 1999-12-14 | Matsushita Electric Ind Co Ltd | Method for driving liquid crystal panel |
| US20030098934A1 (en) * | 2001-11-23 | 2003-05-29 | Hsin-Ta Lee | Liquid crystal display panel having reduced flicker |
| CN1564073A (en) * | 2004-03-30 | 2005-01-12 | 友达光电股份有限公司 | LCD array and LCD panel |
| US20050219187A1 (en) * | 2004-04-01 | 2005-10-06 | Po-Sheng Shih | Driving method for a liquid crystal display |
| CN1808536A (en) * | 2006-02-09 | 2006-07-26 | 友达光电股份有限公司 | Pixel unit of panel display and its drive method |
| CN101852958A (en) * | 2009-04-03 | 2010-10-06 | 胜华科技股份有限公司 | Liquid crystal display panel |
| CN103295540A (en) * | 2012-06-07 | 2013-09-11 | 上海天马微电子有限公司 | Driving method and driving device of active matrix display panel and display |
| CN104715730A (en) * | 2015-03-04 | 2015-06-17 | 昆山龙腾光电有限公司 | Gate drive circuit and display device |
-
2017
- 2017-09-13 CN CN201710822527.6A patent/CN107479289B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11344959A (en) * | 1998-06-03 | 1999-12-14 | Matsushita Electric Ind Co Ltd | Method for driving liquid crystal panel |
| US20030098934A1 (en) * | 2001-11-23 | 2003-05-29 | Hsin-Ta Lee | Liquid crystal display panel having reduced flicker |
| CN1564073A (en) * | 2004-03-30 | 2005-01-12 | 友达光电股份有限公司 | LCD array and LCD panel |
| US20050219187A1 (en) * | 2004-04-01 | 2005-10-06 | Po-Sheng Shih | Driving method for a liquid crystal display |
| CN1808536A (en) * | 2006-02-09 | 2006-07-26 | 友达光电股份有限公司 | Pixel unit of panel display and its drive method |
| CN101852958A (en) * | 2009-04-03 | 2010-10-06 | 胜华科技股份有限公司 | Liquid crystal display panel |
| CN103295540A (en) * | 2012-06-07 | 2013-09-11 | 上海天马微电子有限公司 | Driving method and driving device of active matrix display panel and display |
| CN104715730A (en) * | 2015-03-04 | 2015-06-17 | 昆山龙腾光电有限公司 | Gate drive circuit and display device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106597715A (en) * | 2017-02-06 | 2017-04-26 | 京东方科技集团股份有限公司 | Sub-pixel unit, display device and driving method for display device |
| CN106597715B (en) * | 2017-02-06 | 2019-08-06 | 京东方科技集团股份有限公司 | A kind of driving method of sub-pixel unit, display device and the display device |
| CN113655648A (en) * | 2020-05-12 | 2021-11-16 | 立景光电股份有限公司 | Liquid crystal on silicon panel and projection equipment |
| CN113655648B (en) * | 2020-05-12 | 2024-01-19 | 立景光电股份有限公司 | Liquid crystal on silicon panel and projection equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107479289B (en) | 2020-06-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105096789B (en) | GOA tests the common circuit with removing power-off ghost shadow | |
| CN103995407B (en) | Array base palte and display floater | |
| CN101512628B (en) | Active matrix substrate, and display device having the substrate | |
| US9305512B2 (en) | Array substrate, display device and method for controlling refresh rate | |
| US8963906B2 (en) | Display device using a charge sharing unit and method for driving the same | |
| CN106952628A (en) | Ghost eliminating circuit and display device | |
| CN100362563C (en) | Panel display | |
| CN107665692B (en) | Pixel driving circuit and pixel driving method of liquid crystal display | |
| US20120113084A1 (en) | Liquid crystal display device and driving method of the same | |
| CN104882106B (en) | The liquid crystal display panel and its driving method of row inverted pattern | |
| US8223137B2 (en) | Liquid crystal display device and method for driving the same | |
| CN100480821C (en) | Liquid crystal display device and method of driving the same | |
| CN101510414A (en) | LCD and its driving method | |
| CN108121094A (en) | The shutdown charging method and circuit of a kind of liquid crystal display panel | |
| CN108962120A (en) | Display base plate, display panel, display device and display driving method | |
| CN105405415A (en) | Display Device And Display Method Thereof For Compensating Pixel Voltage Loss | |
| CN105679266A (en) | Shutdown circuit, peripheral driving device and LCD panel | |
| CN105469751A (en) | Ghost shadow elimination method and driving method, driving device, panel and display system thereof | |
| CN110288959A (en) | The driving circuit and its driving method of a kind of display panel, display panel | |
| US6897846B2 (en) | Circuit and method of driving liquid crystal display | |
| CN106297706A (en) | Pixel cell, display base plate, display device, the method for driving pixel electrode | |
| CN104240671B (en) | Pixel circuit, control method thereof and display device with pixel circuit | |
| CN107479289A (en) | Image element structure and array base palte | |
| CN107515499A (en) | Liquid crystal display panel | |
| CN203811952U (en) | Array substrate and display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |