CN1806314A - Impurity doping method, impurity doping apparatus and semiconductor device produced by using same - Google Patents
Impurity doping method, impurity doping apparatus and semiconductor device produced by using same Download PDFInfo
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- CN1806314A CN1806314A CN 200480016193 CN200480016193A CN1806314A CN 1806314 A CN1806314 A CN 1806314A CN 200480016193 CN200480016193 CN 200480016193 CN 200480016193 A CN200480016193 A CN 200480016193A CN 1806314 A CN1806314 A CN 1806314A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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Abstract
An impurity doping method and an impurity doping apparatus are disclosed which enable high-precision control in doping of a substrate with impurities. A substrate to be processed (5) is mounted on a holding stage (4) and rotated about a rotational driving axis (13). After activating a vacuum pump (6), gas evacuation by the vacuum pump (6) is stopped and a certain amount of a substance for plasma generation (a gas substance) in a measuring chamber (7) is introduced into a vacuum chamber (1) through a nozzle (14). The nozzle (14) is provided with many micronozzles (19), and a gas flow (15) is generated through these micronozzles (19) in the vacuum chamber (1) according to the excitation intensity of a plasma. The gas flow (15) is spatially non-uniform within the vacuum chamber (1). A plasma generating unit (2) is then driven by a power supply (3) so that the gas substance non-uniformly introduced in the vacuum chamber (1) is excited into a plasma, and the surface of the substrate to be processed (5) is exposed to the plasma for a certain time.
Description
Technical field
The present invention relates to method for introducing impurities, apparatus for introducing impurity and by its semiconductor device that forms, particularly, the impurity that relates to plasma doping imports the control of profile.
Background technology
In recent years, along with the granular of semiconductor device, require to form the technology of shallow joint.In semiconductor fabrication in the past, be widely used in the method for injecting various conductive-type impurities such as boron (B), phosphorus (P), arsenic (As) element on the semiconductor substrate surface with low energy ion.
The method of using this ion to inject forms the shallow joint of semiconductor device, though can form shallow joint, has boundary on the degree of depth that is formed by the ion injection.For example, be difficult to import boron impurity more shallowly, inject at ion, the degree of depth of ingress area has apart from the boundary about matrix surface 100nm.
Therefore, in recent years, as the means that can form more shallow joint, motion has various doping methods, and wherein, the plasma doping technology is more and more gazed at as being suitable for the technology of practicability.It is that the reacting gas that will contain the impurity that will import carries out plasma excitation that this plasma mixes, irradiation plasma and import the technology of impurity on above-mentioned matrix surface.According to this technology, even boron impurity also can form the shallow joint (for example with reference to patent documentation 1,2) of dark 70nm.
Non-patent literature 1: プ ラ ズ マ De one ピ Application グ skill Intraoperative: wild two works (the plasma doping technology: the wild Wen Erzhu of water) (the 70th volume, No. 12, p1458～1462 (2001)) of dividing of water;
Non-patent literature 2: low バ イ ア ス パ ラ ズ マ De one ピ Application グ To I つ て De one プ さ れ サ Block-0.1 ミ Network ロ Application pMOSFET performance: Reliable and enhanced performancesof sub-0.1 μ m pMOSFETs doped by low biased Plasma Doping, DamienLenoble, VLSI シ Application Port ジ ウ system, LEEE/ " Japanese ying physical society " sponsor, P.110,2000.
At present, the miniaturization of semiconductor device is development rapidly, and its design size of making in batches is less than or equal to 100nm.On the other hand, silicon wafer (semiconductor substrate) from Ф 200mm to Ф 300mm heavy caliberization.This is wherein importing in the impurity to semiconductor substrate surface, requires to have high-precision control technology as described below.
The first, be stably to control the technology of formation that near the degree of depth of carrying out the substrate surface that impurity imports is less than or equal to the shallow joint of 100nm.The second, be control heavy caliber change as mentioned above real estate in the technology of homogeneity of Impurity Distribution.
But, in above-mentioned ion injection method, particularly when importing boron impurity, be difficult to make B ion or BF
2The acceleration energy of ion becomes the low-yield of several keV, and the degree of depth with the impurity ingress area that is difficult to form afterwards is less than or equal to the problem of the shallow joint of 100nm.To this, in existing plasma doping, make the energy of plasma be less than or equal to 100eV easily, controlling depth is less than or equal to the shallow joint of 50nm as mentioned above, but exist still can not fully control the heavy caliber change real estate in the inhomogeneity problem of Impurity Distribution.
In addition, advancing the customization of semiconductor device product, it must be corresponding to many kinds produced in small quantities.At this, in order to improve the production efficiency of multi-assortment production, importing in the technology of impurity to semiconductor substrate surface, the technology of import volume that can control impurity in real estate freely is very effective.
But, inject and arbitrary method of present plasma doping at above-mentioned ion, control the import volume of impurity in the real estate that all has been difficult in above-mentioned heavy caliber change freely.The problems referred to above that impurity imports are not limited to form the semiconductor substrate of semiconductor device, under the situation of the matrix base plate that becomes the liquid crystal display substrate that forms liquid crystal display device etc. too.
Summary of the invention
The present invention researches and develops in view of the above problems, and its purpose is to be provided to substrate and imports the method for introducing impurities and the apparatus for introducing impurity that can carry out High Accuracy Control in the impurity.
Another object of the present invention is to control the impurity import volume, realize the importing of the impurity that the degree of depth is extremely shallow accurately.
Other purposes of the present invention are to reduce the fluctuation that the impurity that is caused by the position imports the degree of depth or concentration, and the degree of depth imports impurity equably on large-area substrates.
Method for introducing impurities of the present invention carries out plasma excitation to the material that contains impurity, the described impurity that is energized is imported in the matrix, it is characterized in that, adjust near the distribution of the described material of described matrix surface, so that at least a portion of the distribution of described plasma offsets.That is, adjust near the distribution of the described material the described matrix surface according to the distribution of described plasma.
That is,, adjust according to the distribution of plasma self with the form that the distribution of plasma self, the i.e. distribution (distributions of ion and group, neutral particle etc.) of the final plasma that produces offset.In fact, simulate or import the result according to the impurity of reality and adjust near the matrix surface species distribution.At least a portion of the distribution of so-called plasma offsets, and is meant to apply to change the such species distribution of original distribution of particles, is meant that generation does not exist with ... the such species distribution of plasma distribution of original plasma distribution.Therefore,, not only the distribution of original plasma is offseted and become evenly, and the part of the distribution that further enlarges of original plasma distribution also can offset at this.
Perhaps, method for introducing impurities of the present invention comprises following operation: adjust near the distribution of the described material of described matrix surface, to have the distribution corresponding to described plasma distribution, described material is supplied with in chamber; Becoming poised state on described matrix surface after, described material produces the plasma of described material.
In common plasma producing apparatus, the electric power that high frequency or microwave etc. is used for plasma excitation has boundary on the homogeneity of space.Therefore, motion has following method in method for introducing impurities of the present invention,, by the distribution of the material of plasma excitation, can access the Impurity Distribution that does not rely on this space homogeneity degree by control that is.
For example, supply is with this inhomogeneity counteracting and by the material of plasma excitation.Thus, can import the very high impurity of homogeneity to extremely shallow zone from matrix surface.And, even the matrix of semiconductor substrate or the such heavy caliberization of liquid crystal display substrate is also controlled the homogeneity of Impurity Distribution easily.
In addition, the present invention is owing to controlling profile accurately in impurity imports, so have following feature: carry out plasma excitation material becomes poised state on matrix surface after; Make the plasma profile (distribution of ion and group, neutral ion) of final generation offset the material of adjusting matrix surface according to electrical distribution of plasma excitation etc.; In the distribution of matrix surface plasma generation stage and adjust the material of matrix surface, perhaps above combination of features can be carried out the plasma doping of desirable profile by these methods.
In addition, of the present invention the material that contains impurity is carried out plasma excitation and the described impurity that will encourage imports in the method for introducing impurities in the matrix, in the chamber of configuration matrix, spatially have and distribute arbitrarily and supply with described material, the described material with this spatial distribution is carried out plasma excitation and imports impurity.
Like this, can import processing just forms Impurity Distribution freely in matrix zones of different by an impurity.Therefore, in the formation of semiconductor integrated circuit, do not need to form the allowance of alignment mask, more granular, highly integrated.In addition, can have the multiple different performance semiconductor device of in a substrate, packing into.And many kinds produced in small quantities of promptly corresponding semiconductor device product improves the production efficiency of multi-assortment production simultaneously.At this, so-called Impurity Distribution is meant the Impurity Distribution that contains on the basis of the Impurity Distribution in face on the depth direction.
In addition, in the present invention, stopping to produce plasma under the described material condition of supplying.Produce plasma stopping to supply with and discharge under the state of described material.Described material in supplying to the chamber that disposes described matrix produces plasma become bascule on described matrix surface after.Perhaps adopt following method, promptly the flow velocity of described material is less than or equal to after the 100meV with corected speed, produces plasma.
Thus, can be with material the flowing of supplying with accurately and stabilisation in above-mentioned chamber.By this stable material is carried out plasma excitation, can further improve the Impurity Distribution of matrix surface.Like this, by the variance components reduction that flowing of material produces, that only suppresses that plasma causes is at random.Flow velocity is less than or equal to 100meV with corected speed and is meant roughly near the state of room temperature, does not produce big distribution change when plasma, can keep the distribution before the plasmaization.
In addition, in the present invention, in chamber, supply with a certain amount of above-mentioned substance, produce plasma then.At this, decide described material a certain amount of of supply according to importing to impurity level in the described matrix.
Thus, can control impurity and become desirable set amount to the import volume of matrix surface.In addition, also extremely shallow importing can be controlled accurately, extremely shallow joint can be formed accurately.
In addition, among the present invention, in the chamber that disposes described matrix, supply with described material by minute nozzle.At this, described material is the gas that contains impurity.Perhaps, also can be particulate, the fine droplets that contains impurity.A plurality of minute nozzles with fine opening footpath are arranged, can be changed flow by independent each minute nozzle of control.
Like this, the spatial distribution of material in the chamber of configuration matrix be can control accurately, the control of impurity level of matrix surface and the control freely of spatial distributions thereof further promoted.
In addition, apparatus for introducing impurity of the present invention carries out plasma excitation to the material that contains impurity, and described impurity is imported in the matrix from the described material that is energized, and it comprises: the chamber that disposes described matrix; In described chamber, supply with the device of a certain amount of described material; To carrying out the device of vacuum exhaust in the described chamber; Make described a certain amount of material become the plasma producing apparatus of plasma.And the device of supplying with a certain amount of described material has the mechanism that measures and store described material, and the volume of this mechanism controls storage container, pressure, temperature remain described material a certain amount of.In addition, the container of above-mentioned storage is taken in the material that has and import to the corresponding amount of impurity level of above-mentioned matrix.
According to this structure, can be at short notice individual carry out to the heavy caliber semiconductor substrate or import the processing of impurity as the matrix of liquid crystal display substrate.Therefore, improved the mass production capabilities of semiconductor device or liquid crystal display device, can reduce production costs.In addition, described material is gas, particulate or fine droplets.
For example, as gas, has B
2H
6, BF
3, AsH
3, PH
3In any.In addition, as particulate or solid, can use among B, As, P, Sb, In, the Al any.At this, drop is meant these particulates and gas dissolving or the muddy material that forms.Outside, also just like the situation of wetting such covering surfaces.
In addition, produce the time of plasma, also can simulate near the profile of the impurity concentration of matrix surface, carry out according to its result.In addition, also can replace the simulation of the profile of impurity concentration, select at least a measurement the in the flow velocity, gas molecula number, pressure group of gas, particulate or fine droplets, produce plasma under less than 2% state at its standard deviation.
In addition, the present invention is owing to controlling form accurately, so have following feature: plasma excitation material becomes poised state on matrix surface after in impurity imports; Make the plasma distribution (distribution of ion and group, neutral ion) of final generation offset the material of adjusting matrix surface according to electrical distribution of plasma excitation etc.; Adjust the material of matrix surface in the distribution of matrix surface plasma generation stage, perhaps above combination of features can be carried out desirable form plasma by these methods and be mixed.
Description of drawings
Fig. 1 is the constructed profile of the apparatus for introducing impurity of first embodiment of the invention;
Fig. 2 is the constructed profile of main part of apparatus for introducing impurity that is used to illustrate the method for introducing impurities of first embodiment of the invention;
Fig. 3 is the figure of driving time of the apparatus for introducing impurity of expression first embodiment of the invention;
Fig. 4 is the figure of driving time of the apparatus for introducing impurity of expression second embodiment of the invention;
Fig. 5 is the constructed profile of main part of the apparatus for introducing impurity of expression third embodiment of the invention;
Fig. 6 is another the constructed profile of apparatus for introducing impurity of four embodiment of the invention;
Fig. 7 is the constructed profile of main part of apparatus for introducing impurity that is used to illustrate the method for introducing impurities of fifth embodiment of the invention;
Fig. 8 is the key diagram of fifth embodiment of the invention, (a) is the figure of expression plasma intensity, (b) is the figure of material (dopant) distribution of expression supply, (c) is the figure of expression plasma distribution;
Fig. 9 is the constructed profile of main part of apparatus for introducing impurity that is used to illustrate the method for introducing impurities of sixth embodiment of the invention;
Figure 10 is the plane graph of silicon wafer substrate of the Impurity Distribution of expression sixth embodiment of the invention;
Figure 11 is the curve chart of the characteristic of the MOSFET that formed by sixth embodiment of the invention of expression;
Figure 12 is the constructed profile of main part of apparatus for introducing impurity that is used to illustrate the method for introducing impurities of seventh embodiment of the invention;
Figure 13 is the curve chart of the Impurity Distribution of expression seventh embodiment of the invention;
Figure 14 is the key diagram of eighth embodiment of the invention, (a) is the figure of expression plasma intensity, (b) is the figure of material (dopant) distribution of expression supply, (c) is the figure of expression plasma distribution.
Embodiment
(first execution mode)
Explanation invention first execution mode below sees figures.1.and.2.Apparatus for introducing impurity of the present invention is characterised in that, by near the species distribution the adjustment matrix surface, can adjust impurity and import form.Fig. 1 is a profile of schematically representing apparatus for introducing impurity of the present invention, and Fig. 2 is the main part that is used to illustrate the said apparatus of method for introducing impurities of the present invention.
As shown in Figure 1, this device has the power supply 3 that vacuum chamber 1, plasma generating unit 2 and electric power thereof are supplied with usefulness.In vacuum chamber 1, be provided with and keep platform 4, the processed substrate 5 of mounting.And, be provided with the vacuum pump 6 of the vacuum degree of regulating vacuum chamber 1.Like this, constitute the main part of apparatus for introducing impurity, but owing to this device is individual type and can carries out fast processing, so the irreducible minimum that overall volume, the particularly volume of vacuum chamber 1 necessitate is important.At this, plasma generating unit 2 is that (Electron Cyclotron Resonance: plasma source etc. electron cyclotron resonace) is preferably the high plasma of response speed the source takes place for helicon wave plasma source, ECR.By such plasma the source taking place, contains the material that is useful on the impurity that imports to object being treated 5 and at this gaseous plasma is encouraged.
In the feed system of the gaseous matter that contains above-mentioned impurity, be provided with the 7a of measurement chamber, 7b, the above-mentioned gas material is supplied with a certain amount of from nozzle 8 to vacuum chamber 1 by 7a of measurement chamber or 7b.At this, the 7a of measurement chamber, 7b store a certain amount of gaseous matter.This memory space is decided by volume, gas temperature, the gas pressure of the 7a of measurement chamber, 7b, respectively by thermometer T1, T2 and pressure gauge P1, P2 monitoring and respectively by not shown temperature control part, pressure control part stably control gaseous temperature, pressure.In addition, this measurement chamber also can set up as required.
From feedway 9 by mass flow control roll 10 to above-mentioned measurement chamber supply gas, can be to the 7a of measurement chamber, 7b gas supplied component by the pressure control of pressure regulator 11 and regulation strictly.At this, gas is B
2H
6, BF
3, AsH
3, PH
3Or with them by the gas after the inactive gas dilution.
Apparatus for introducing impurity of the present invention the material that contains impurity is carried out plasma excitation and with doping impurity to substrate, with reacting gas is supplied to continuously reaction chamber and generates RIE (the Reactive Ion Etching: such dry-etching or CVD (ChemicalVapor Deposition: chemical vapor deposition) different reactive ion etching) of plasma, in apparatus for introducing impurity of the present invention, can be accurately with the corresponding a certain amount of gaseous plasmaization of impurity import volume (dosage) that imports to substrate.According to this result, can import the extremely shallow impurity of the degree of depth, can control the importing degree of depth of impurity accurately.
In addition, can fast processing be that the impurity that matrix carries out imports to bigbore semiconductor substrate, can carry out individual processing at short notice.Thus, can productivity form high accuracy, semiconductor device with high reliability well.In addition, being used for to improve the mass production capabilities of liquid crystal indicator under the situation of liquid crystal display substrate, reduce production costs.
In apparatus for introducing impurity shown in Figure 1, can constitute by electric conductor and keep platform 4, keeping installing on the platform 4 direct current (DC) power supply or as the RF power supply of high frequency electric source.Here, the RF power supply is that frequency is the high frequency electric source of 100kHz～10MHz.Can between plasma that generates by these power supplys and processed substrate 5, form the DC current potential of number eV～1keV scope.In addition, the mechanism that can rotate maintenance platform 4 also can be installed.By by this rotating mechanism on processed substrate 5 in applying for example rotation about 10rpm on the horizontal plane, can further improve the homogeneity of the impurity dose in 5 of the processed substrates thus.
In addition, as the material that contains impurity, except above-mentioned normal temperature, gas under the normal pressure, also can use the such solid of B, As, P, Sb, In, Al, Si particulate, contain the liquid of above-mentioned impurity or surround the material of solia particle by liquid.Wherein, in this case, feed system shown in Figure 1 is some difference slightly, must can the impure material of a certain amount of supply.
Next according to Fig. 2 and Fig. 3 method for introducing impurities of the present invention is described.At this, the position identical with position shown in Figure 1 represented by prosign.The time chart of the driving condition of the power supply 3 that Fig. 3 (a)～(c) is respectively expression vacuum pump 6, a gas supply nozzle 8 of supplying with usefulness, plasma excitation is used.As shown in Figure 2, keeping for example it being fixed on the platform 4 as the silicon wafer of processed substrate 5 mounting diameter Ф 300mm and by Electrostatic Absorption.Then, make vacuum pump 6 actions and making the vacuum degree in the vacuum chamber 1 become 10
-3After about Pa, stop exhaust by vacuum pump 6.
After becoming this state, the above-mentioned a certain amount of gaseous matter in the 7a of measurement chamber, the 7b is supplied in the vacuum chamber 1 by nozzle 8.At this,, together reduce so flow into the flow velocity and the time of the gaseous matter of vibration chamber 1 because vacuum pump 6 is a halted state.The mobile moment that becomes poised state and be stable at standard state of the above-mentioned gas material in processed substrate 5 near surfaces or vacuum chamber 1, drive plasma generating unit 2 by power supply 3, will be full of the gaseous matter plasma excitation (interval P :) in the vacuum chamber 1 with reference to Fig. 3.At this, by measuring practically or simulate, the flow velocity of this gaseous matter be less than or equal to setting (scaled value: moment 100meV), drive plasma generating unit 2, the gaseous matter that is full of in the vacuum chamber 1 is carried out plasma excitation.
Like this, generate the plasma 12 with uniform spatial distribution, (for example 1 minute) is exposed in the plasma 12 processed substrate 5 surfaces in official hour.At this, plasma 12 is electron temperature thermal unbalance plasmas extremely different with ion temperature, and usually, ion temperature is tens of degree, and its hot momentum is little.
By to above-mentioned processed substrate 5 irradiation plasmas, the material of impurity that contains importing is with adsorbed state or low-yield (ion implantation state of above-mentioned several eV～1keV) imports to processed substrate 5 surfaces or it is inner.At this, under adsorbed state, physical absorption above-mentioned substance on above-mentioned processed substrate 5 surfaces, simultaneously, main chemisorbed is by the such spike of neutral group of the above-mentioned substance of above-mentioned plasma excitation generation.
In addition, under ion implantation state, with the Ionized material of the impurity measurement in the above-mentioned substance, a part is injected into by warm-up movement in the surface (wherein, hot as mentioned above kinetic energy is little, its amount is very little), and the ion sheath or the such DC power supply of so-called automatic bias that mainly utilize plasma 12 and processed substrate 5 surfaces to generate quicken to inject.
Then, in other chamber of the not shown multi-cavity structure of Fig. 1, implement RTA (rapid thermal treatment).Like this, in method for introducing impurities of the present invention, can import impurity at processed substrate 5 near surfaces even and shallowly.In addition, because a certain amount of gaseous matter is supplied in the vacuum chamber 1, so can be controlled to desirable set amount to the impurity level that matrix surface imports.
(second execution mode)
In described first execution mode, shown in Fig. 3 chart, carry out plasma excitation while supply with the material that becomes impurity, but change the time of plasma excitation in the present embodiment, shown in Fig. 4 chart, after stopping the impurity supply, carry out plasma excitation.
The time chart of Fig. 4 (a) expression vacuum pump.That is, as mentioned above, the vacuum degree in vacuum chamber 1 reaches 10
-3After about Pa, stop exhaust (Fig. 4 (b)).And, supply to vacuum chamber 1 in by nozzle 8 the above-mentioned a certain amount of gaseous matter in the 7a of measurement chamber, the 7b after, also stop above-mentioned supply by not shown electromagnetically operated valve.
Then, drive plasma generating unit 2 and generate plasma 12 (Fig. 4 (c)).With above-mentioned same, between interval P, import impurity afterwards to processed substrate 5 surface elements.Needn't necessarily need the 7a of measurement chamber, 7b in such method.Even directly import gaseous matter to vacuum chamber 1 from feedway shown in Figure 19, also can be by mass flow control roll 10 component of control gaseous material strictly.
Also in such mobile moment that becomes level and be stable at standard state of the above-mentioned gas material in the vacuum chamber 1 as mentioned above, gaseous matter is carried out plasma excitation under this situation.
(the 3rd execution mode)
Next with reference to Fig. 5 third embodiment of the invention is described.
This execution mode is different with described first and second execution mode, it is characterized in that, makes the gas that contains impurity that imports in the vacuum chamber 1 have the spatial distribution of regulation wittingly, improves the homogeneity to the impurity dose of processed substrate 5 doping.Fig. 5 is the constructed profile of the main part of apparatus for introducing impurity of the present invention.At this, the position identical with the position of first execution mode represented by prosign.
In this device, the nozzle 14 with a plurality of ejiction openings is connected with measurement chamber, makes the spray volume that contains from the nozzle of the impurity of nozzle have certain distribution and adjusts.
In Fig. 5, identical with first execution mode explanation is provided with vacuum chamber 1, plasma generating unit 2 and electric power thereof and supplies with power supply 3, is provided with to keep platform 4 and the processed substrate 5 of mounting in vacuum chamber 1.At this, keeping on the platform 4 rotating driveshaft 13 being installed, it rotates along the arrow label orientation.
In addition, also be provided with the vacuum pump 6 of the vacuum degree of regulating vacuum chamber 1.And, as shown in Figure 5, in above-mentioned measurement chamber 7, being connected with the mouth 14 of disputing with a plurality of ejiction openings, this nozzle 14 is inserted in the vacuum chamber 1.At this, nozzle 14 can be tubulose, also can have widening of plane.At this, ejiction opening can be made of the aggregate of micron-sized minute nozzle.And, from measurement chamber's 7 importing gases the time, can be shown in the distribution of Fig. 5 arrow mark, uneven gas stream 15 on the span.
Like this, by the quantity delivered of control from the gas of nozzle, the fluctuation of the plasma that many conditions such as position are caused is offset, and can form uniform distribution.
(the 4th execution mode)
Next the apparatus for introducing impurity of four embodiment of the invention is described.As shown in Figure 6, this apparatus for introducing impurity and Helicon wave plasma, ecr plasma generate different, apply the high frequency of frequency 13.56MHz and generate plasma on the parallel flat motor.In Fig. 5, identical with the structure of first execution mode explanation, maintenance platform 4 and the processed substrate 5 of mounting are set in vacuum chamber 1.At this, on the maintenance platform 4 that constitutes by electric conductor, high frequency electric source 16 is installed, it becomes the single electrode of parallel plate electrode.And be provided with electrode 17, regulate the vacuum pump 6 of the vacuum degree of vacuum chamber 1.
A plurality of ejiction openings are set above-mentioned on to electrode 17, are connected with measurement chamber 7 by gas introduction tube 18.At this, ejiction opening is made of the aggregate of bore ten micron-sized minute nozzles.And, from measurement chamber 7 when vacuum chamber 1 imports gaseous matter, as shown in Figure 6, can the span on uneven gas stream 15.In this example, owing to be weaker than central part at the maintenance platform 4 that constitutes electrode with near the electric field the periphery of electrode 17, so become higher concentration by the air-flow 15 of adjusting periphery, it is even that plasma distribution becomes in real estate.
In addition, also can apply the magnetic field parallel, also can easily generate high-density plasma in this case by permanent magnet etc. with parallel plate electrode.Above-mentioned situation is represented in magnetic field shown in Figure 6, equally also represents the electric field of high frequency.
(the 5th execution mode)
Next with reference to Fig. 7 and Fig. 8 the 5th execution mode is described.This situation serves as basic with the method for first execution mode explanation also, has following feature in the present embodiment, that is, make the importing of gaseous matter have spatial distribution as mentioned above.Usually, the high frequency that is used by plasma excitation or the electromagnetic energy density of microwave have spatial distribution, and its distribution may not equal mutually reason, produces spatial distribution on the plasma that generates.
Therefore, in the present embodiment,, the spatial distribution that makes the plasma that above-mentioned reason produces (below be referred to as plasma distribution) make the supply of gaseous matter have spatial distribution for offseting.At this, can measure above-mentioned plasma distribution by known luminescence of plasma spectral photometry, Faraday cup (Off ア ラ デ イ カ Star プ) or Langmuir probe (ラ Application グ ミ ユ ア one プ ロ one Block) etc.
As shown in Figure 7, for example keeping on the platform 4 the processed substrate 5 of mounting and it being fixed, make its rotation by rotating driveshaft 13 by Electrostatic Absorption.For example horizontally rotate with 20rpm.And, make vacuum pump 6 actions and making the vacuum degree in the vacuum chamber 1 reach 10
-3After about Pa, stop the exhaust in the vacuum pump 6.After becoming this state, the material of the above-mentioned a certain amount of plasma generation usefulness in the measurement chamber 7 is imported in the vacuum chamber 1 by nozzle 14.At this, on nozzle 14, be provided with a plurality of minute nozzles 19, in vacuum chamber 1, produce uneven air-flow 15 on the space by this minute nozzle 19.And, the flow of matter that above-mentioned plasma generation in processed substrate 5 near surfaces or vacuum chamber 1 is used becomes poised state and is stable at the moment of standard state, drives plasma generating unit 2 and the material (gaseous matter) that is full of the plasma generation usefulness in the vacuum chamber 1 is carried out plasma excitation by power supply 3.
For example, the flow velocity at this gaseous matter is less than or equal to setting (scaled value: in moment 100meV), drive the plasma generating unit, with the gaseous matter plasma excitation that imports to unevenly in the vacuum chamber 1.Adjust above-mentioned gas stream 15 by this plasma excitation, make in the low space of electromagnetic energy density to have a large amount of gaseous matters, have a spot of gaseous matter in the high space of electromagnetic energy density.And, in official hour (for example 1 minute), processed substrate 5 surfaces are exposed in the plasma.Afterwards, carry out identical processing with first embodiment explanation.
According to Fig. 8 this result is described, shown in Fig. 8 (a), the spatial distribution of the high frequency that uses from plasma excitation or the electromagnetic energy density of microwave etc. produces plasma distribution.That is, from the processed substrate 5 of rotation, plasma distribution becomes the distribution shape of concentric circles usually.Therefore, have the spatial distribution of the material (gaseous matter) of the plasma generation usefulness shown in Fig. 8 (b), the distribution (distribution of ion and group, neutral particle) of resultant plasma is offseted with the electrical distribution by the excitation of this plasma etc.
At this, spatial distribution can be at processed substrate 5 near surfaces, also can be in vacuum chamber 1.The spatial distribution of such gaseous matter can be obtained from the simulation of the so-called air-flow that has added warm-up movement or tentative experiment.This situation is also represented the spatial distribution of the gaseous matter that the processed substrate 5 from rotation is seen.Gaseous matter with such spatial distribution is carried out plasma excitation, then shown in Fig. 8 (c), generate the plasma that has with the same spatial distribution of seeing from processed substrate 5, this processed substrate 5 is exposed in the uniform plasma.Like this, can in 5 of processed substrates, import uniform impurity.In addition, the supply of the aforesaid gaseous matter that is undertaken by minute nozzle can be controlled the spatial distribution of the material in the chamber of configuration matrix accurately.
As described in first execution mode, inject form by the impurity that imports to processed substrate 5 irradiation plasmas with absorption shape or low-energy ion and import.At this, the such spike of the neutral group of chemisorbed in absorption shape.In addition, inject form at ion, with the above-mentioned substance ionization, but the ion sheath or the so-called automatic bias dc voltage that generate by plasma and processed substrate 5 surfaces quicken to inject.Result shown in Fig. 8 (a)～(c) is by the spatial distribution of control gaseous material, can adjust the importing of the impurity of absorption shape.
(the 6th execution mode)
Next the method for introducing impurities of the 6th execution mode is described.This execution mode is different with the 3rd execution mode, makes the gaseous matter that imports in the vacuum chamber 1 have the spatial distribution of regulation wittingly, and control makes it inhomogeneous in face to the impurity dose that processed substrate 5 mixes.The apparatus for introducing impurity of this situation also can use the identical device of device with the explanation of second execution mode.
In the main part of apparatus for introducing impurity shown in Figure 9, in vacuum chamber 1,, it is fixed by Electrostatic Absorption keeping on the platform 4 for example processed substrate 5 of mounting.As shown in the figure, make locational vacuum pump 6 actions of the end, lower-left of being located at vacuum chamber 1.In addition, import from measurement chamber 7 by the nozzle 8 of being located at vacuum chamber 1 upper right end to vacuum chamber 1 gas supplied material.
Like this, in vacuum chamber 1, form and flow, drive plasma generating unit 2 by power supply 3 then, the gaseous matter that imports to unevenly in the vacuum chamber 1 is carried out plasma excitation from upper right gaseous matter to left down.
Like this, shown in the signal of Fig. 9 oblique line, generate the deflection plasma 20 that plasma density reduces from right to left gradually.And, in official hour (for example 10 seconds) make processed substrate 5 surfaces be exposed to the deflection plasma 20 in.Then, carry out the identical processing illustrated with first execution mode.
With reference to Figure 10 its result is described.Fig. 9 imports to silicon wafer behind the silicon wafer (processed substrate 5) of the Ф 300mm Impurity Distribution in unilateral with boron impurity.The expression sheet resistor distributes on processed substrate 5.Sheet resistor increases gradually on the arrow label orientation of Figure 10.At this, the top of processed substrate 5 shown in Figure 10 is corresponding with the right-hand side of Fig. 9, and the bottom of processed substrate 5 shown in Figure 10 is corresponding with the left side of Fig. 9.Like this, in vacuum chamber 1, have the spatial distribution of gaseous matter, can import the impurity that in 5 of processed substrates, has desirable inhomogeneities thus.
Figure 11 represents to carry out the impurity with inhomogeneity shown in Figure 10 and imports and carry out transistor characteristic after the channel doping that MOSFET uses, the relation of drain current and drain voltage under the certain situation of expression grid voltage.At this, the X among the figure, Y distinguish the MOSFET of the semiconductor chip of X corresponding shown in Figure 10, Y position.Like this, can make a plurality of semiconductor chips by once importing impurity to processed substrate 5 with the different MOSFET of characteristic.
(the 7th execution mode)
Next other method for introducing impurities of seventh embodiment of the invention is described.The apparatus for introducing impurity of this situation is identical with the device of the 3rd execution mode shown in Figure 7 explanation.In this case, do not have rotating driveshaft 13, do not make processed substrate 5 rotations.In the main part of apparatus for introducing impurity shown in Figure 11, in vacuum chamber 1, for example keeping on the platform 4 the processed substrate 5 of mounting and it is being fixed by Electrostatic Absorption.Make vacuum pump 6 actions and make the vacuum degree in the vacuum chamber 1 reach 10
-3After about Pa, stop the exhaust of vacuum pump 6.
The material (gaseous matter) of the plasma generation usefulness in the measurement chamber 7 is imported in the vacuum chamber 1 by nozzle 14.At this, on nozzle 14, be provided with a plurality of minute nozzles 19, in vacuum chamber 1, produce uneven air-flow 15 on the space by this minute nozzle 19.Drive plasma generating unit 2 by power supply 3, the gaseous matter that imports to unevenly in the vacuum chamber 1 is carried out plasma excitation, in official hour (for example 10 seconds), processed substrate 5 surfaces are exposed in the plasma.Then, carry out and the identical processing of first execution mode explanation.
As a result, as shown in figure 13, in vacuum chamber 1, generate plasma with stairstepping plasma density.That is, can generate the plasma of step-like reduction from the left side of processed substrate 5 to the right side.The supply of the gaseous matter that is undertaken by minute nozzle can be controlled the spatial distribution of the material in the chamber of configuration matrix accurately in this case.And, can further promote the control of impurity level of matrix surface and the control freely of distribution thereof.
The importing that therefore, can have the impurity of inhomogeneity with the precision higher than situation shown in Figure 10.Beyond the MOSFET channel doping, can also done with high accuracy become the formation of the diffusion layer of source electrode, drain region, the formation of trap layer.
In the 7th execution mode of the present invention, when semiconductor substrate surface imports impurity, owing in real estate, control the import volume of impurity easily freely, can in same substrate, import the zones of different that processing just forms Impurity Distribution freely by an impurity.Therefore, in the formation of semiconductor integrated circuit, do not need the allowance of mask alignment, more granular, highly integrated.In addition, can be rapid the semiconductor device product that generates of corresponding less volume and more variety.In addition, in the studying of semiconductor device, can form with different a plurality of conditions impurity is imported to a wafer semiconductor-on-insulator chip, so can promptly carry out the optimization that semiconductor is made.And, in the manufacturing of semiconductor device, can carry out the optimization that semiconductor device is made rapidly.And, in the manufacturing of semiconductor device, can seek rapidization of corresponding customer demand.
(the 8th execution mode)
In the above embodiment, the semiconductor substrate that forms semiconductor device is illustrated as processed substrate, the present invention forms also same fully being suitable for of situation of the matrix base plate of liquid crystal display device at processed substrate.Use with shown in the identical apparatus for introducing impurity of the employed device of first execution mode, but in the situation of large-area substrates, distribution appears on the excitation electric power of plasma easily in vacuum chamber, shown in Figure 14 (a), particularly the end reduces easily.Therefore in this case, shown in Figure 14 (b),, increase the quantity delivered of gas in the end, shown in Figure 14 (c), as a result of can realize uniform gas density as the 8th execution mode of the present invention.Therefore, can form large-area substrates.
In addition, the invention is not restricted to above-mentioned execution mode, in technological thought scope of the present invention, execution mode suitably can be changed.For example, in the 3rd, the 7th execution mode, record, in vacuum chamber 1, import the material (gaseous matter) of a certain amount of plasma generation usefulness from measurement chamber 7, it is carried out the situation of plasma excitation, but not by measurement chamber 7 but import gaseous matters from feedway 9 by mass flow control roll 10 and also can produce same effect.In this case, can make vacuum pump 6 actions and gaseous matter is carried out exhaust, carry out plasma excitation simultaneously.The impurity dose of this moment can be controlled by total import volume of the gaseous matter that obtained by 10 quadratures of mass flow control roll.In addition, the special type of apparatus for introducing impurity of the present invention is to handle fast.Therefore, plasma generating unit 2 can generate ICP (Inductive Coupled Plasma: the highdensity like this plasma inductive coupling plasma).In this case, need to respond at high speed as previously mentioned.
In addition, in said embodiment, illustrated that decompression imports the method for impurity down, also can import under normal pressure.
With reference to detailed or specific execution mode the present invention has been described, but those skilled in the art can carry out various changes and modification in the scope that does not break away from spirit of the present invention.
The Japanese patent application No.2003-164249 that the application is based on application on June 9th, 2003 proposes, and its content is enrolled with reference to described application.
Utilizability on the industry
Above-described method for introducing impurities of the present invention carries out plasma to the material that contains impurity Excitation imports to impurity in the matrix from the described material that is energized, wherein, and according to plasma distribution Adjust the spatial distribution of the material in the chamber that disposes matrix.
Perhaps, device introduction method of the present invention comprises following operation: adjust near the above-mentioned matrix surface The distribution of material, to have the distribution corresponding to plasma distribution, above-mentioned substance is supplied to chamber In; After becoming poised state, matrix surface produces plasma at above-mentioned substance.
Therefore, the invention provides a kind of method for introducing impurities, it has following effect, and it is right namely to be used in The plasma such as high frequency or microwave and the spatially uniform variation of electric power etc., also can uniformity non-Normal highland imports to extremely shallow zone with impurity from matrix surface.
Claims (26)
1. method for introducing impurities, it carries out plasma excitation to the material that contains the impurity that will import, the plasma of described impurity is imported in the matrix from the described material that has been energized, it is characterized in that, adjust near the distribution of the described material of described matrix surface, so that at least a portion of the distribution of described plasma can be cancelled out each other.
2. method for introducing impurities as claimed in claim 1 is characterized in that, comprises following operation:
Near the distribution of the described material the described matrix surface makes at least a portion of the distribution of described plasma offset and adjust, and described material is supplied in the chamber that disposes described matrix;
Becoming poised state on described matrix surface after, described material produces plasma.
3. method for introducing impurities as claimed in claim 2 is characterized in that, supplies with in the operation of described material, adjusts to make the described impurity that imports to described matrix become even.
4. method for introducing impurities as claimed in claim 2 is characterized in that, supplies with the operation of described material, adjusts the distribution that makes the impurity that imports to described matrix have regulation.
5. as each described method for introducing impurities in the claim 1～4, it is characterized in that, under the state that the supply that makes described material stops, producing plasma.
6. as each described method for introducing impurities in the claim 1～4, it is characterized in that, under the state that the supply that makes described material and discharge stop, producing plasma.
7. method for introducing impurities, it carries out plasma excitation to the material that contains impurity, described impurity is imported in the matrix from the described material that is energized, it is characterized in that, under the state that stops the described material of supply in the chamber that disposes described matrix, produce plasma.
8. method for introducing impurities, it carries out plasma excitation to the material that contains impurity, described impurity is imported in the matrix from the described material that is energized, it is characterized in that, produce plasma stopping in the chamber that disposes described matrix supplying with and to discharge under the state of described material.
9. method for introducing impurities, it carries out plasma excitation to the material that contains impurity, described impurity is imported in the matrix from the described material that is energized, it is characterized in that the described material in supplying to the chamber that disposes described matrix produces plasma after described matrix surface becomes poised state.
10. as each described method for introducing impurities in the claim 1～9, it is characterized in that the flow velocity of described material produces plasma after being less than or equal to 100meV with corected speed.
11. as each described method for introducing impurities in the claim 1～10, it is characterized in that, in the chamber that disposes described matrix, supply with a certain amount of described material and produce plasma afterwards.
12. method for introducing impurities as claimed in claim 11 is characterized in that, the impurity level that a certain amount of basis of the described material of supply imports to described matrix determines.
13. as each described method for introducing impurities in the claim 1～12, it is characterized in that, in the chamber that disposes described matrix, supply with described material while adjust described profile of impurities by minute nozzle.
14., it is characterized in that described material is a gas as each described method for introducing impurities in the claim 1～13.
15. method for introducing impurities as claimed in claim 14 is characterized in that, described gas is to contain B
2H
6, BF
3, AsH
3, PH
3In any.
16., it is characterized in that described material is a particulate as each described method for introducing impurities in the claim 1～13.
17., it is characterized in that described material is a fine droplets as each described method for introducing impurities in the claim 1～13.
18., it is characterized in that described particulate contains among B, As, P, Sb, In, the Al any as claim 16 or 17 described method for introducing impurities.
19. an apparatus for introducing impurity, it carries out plasma excitation to the material that contains impurity, and described impurity is imported in matrix from the described material that is energized, and it is characterized in that, comprising:
Dispose the chamber of described matrix;
To supplying with the device of described material in the described chamber;
To carrying out the device of vacuum exhaust in the described chamber;
When being maintained in poised state, described material carries out the plasma producing apparatus of plasmaization.
20. apparatus for introducing impurity as claimed in claim 19 is characterized in that, the device of supplying with described material has the mechanism that measures and store described material.
21. apparatus for introducing impurity as claimed in claim 20 is characterized in that, measures and stores volume, pressure, the temperature of the mechanism controls storage container of described material, and be held in described material a certain amount of.
22., it is characterized in that the container that is used to measure and store described material can be stored the material with amount corresponding with the impurity level that imports to described matrix as each described apparatus for introducing impurity of claim 20～21.
23., it is characterized in that described material is gas, particulate or fine droplets as each described apparatus for introducing impurity of claim 19～22.
24., it is characterized in that as each described method for introducing impurities of claim 1～18, comprise the operation that the action of described material is simulated, adjust the time that produces described plasma according to described analog result.
25. a semiconductor device is characterized in that, uses claim 1～18,24 each described method for introducing impurities or each described apparatus for introducing impurity of claim 15～23 and forms, and has by importing the element area that described impurity forms.
26. semiconductor device as claimed in claim 25 is characterized in that, described element area comprises the impurity ingress area with a plurality of different impurity profiles.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP164249/2003 | 2003-06-09 | ||
| JP2003164249A JP2005005328A (en) | 2003-06-09 | 2003-06-09 | Method and apparatus for introducing impurity and semiconductor device formed using the same |
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| Publication Number | Publication Date |
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| CN1806314A true CN1806314A (en) | 2006-07-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200480016193 Pending CN1806314A (en) | 2003-06-09 | 2004-06-08 | Impurity doping method, impurity doping apparatus and semiconductor device produced by using same |
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| Country | Link |
|---|---|
| JP (1) | JP2005005328A (en) |
| CN (1) | CN1806314A (en) |
| TW (1) | TW200504785A (en) |
| WO (1) | WO2004109785A1 (en) |
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| CN103392222A (en) * | 2011-02-21 | 2013-11-13 | 株式会社山景工程 | Film forming method and film forming device |
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| WO2006064772A1 (en) | 2004-12-13 | 2006-06-22 | Matsushita Electric Industrial Co., Ltd. | Plasma doping method |
| WO2006104145A1 (en) * | 2005-03-28 | 2006-10-05 | Matsushita Electric Industrial Co., Ltd. | Plasma doping method and device used for this |
| JP4979576B2 (en) * | 2005-03-30 | 2012-07-18 | パナソニック株式会社 | Plasma doping method and plasma processing apparatus |
| US20090181526A1 (en) * | 2005-03-30 | 2009-07-16 | Tomohiro Okumura | Plasma Doping Method and Apparatus |
| KR20070115907A (en) * | 2005-03-31 | 2007-12-06 | 마쯔시다덴기산교 가부시키가이샤 | Plasma doping method and apparatus |
| WO2006121131A1 (en) | 2005-05-12 | 2006-11-16 | Matsushita Electric Industrial Co., Ltd. | Plasma doping method and plasma doping apparatus |
| JP4405588B2 (en) * | 2007-12-28 | 2010-01-27 | パナソニック株式会社 | Plasma doping apparatus and method, and semiconductor device manufacturing method |
| CN102124543B (en) * | 2008-08-15 | 2013-03-13 | 株式会社爱发科 | Plasma doping method and semiconductor device manufacturing method |
| JP7050139B2 (en) * | 2020-12-14 | 2022-04-07 | 東京エレクトロン株式会社 | Board processing equipment and measurement board |
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| JP2553556B2 (en) * | 1987-06-04 | 1996-11-13 | 松下電器産業株式会社 | Impurity doping method and apparatus |
| JPH0971866A (en) * | 1995-09-01 | 1997-03-18 | Hitachi Ltd | Reduced pressure cvd apparatus |
| JP2866374B1 (en) * | 1998-01-27 | 1999-03-08 | 三菱マテリアルポリシリコン株式会社 | Method and apparatus for supplying gas for epitaxial growth |
| US6020592A (en) * | 1998-08-03 | 2000-02-01 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
| JP2000054150A (en) * | 1998-08-07 | 2000-02-22 | Hitachi Ltd | Plasma treating device and plasma treating method |
| JP2000090871A (en) * | 1998-09-16 | 2000-03-31 | Seiko Epson Corp | Doping method and device thereof |
| EP1204986A1 (en) * | 1999-08-06 | 2002-05-15 | Axcelis Technologies, Inc. | System and method for providing implant dose uniformity across the surface of a substrate |
| JP2002043243A (en) * | 2000-07-26 | 2002-02-08 | Matsushita Electric Ind Co Ltd | Ion doping apparatus and thin film semiconductor manufactured by using the same and display |
| JP3911997B2 (en) * | 2000-12-04 | 2007-05-09 | 松下電器産業株式会社 | Plasma doping equipment |
| JP2002231650A (en) * | 2001-01-31 | 2002-08-16 | Toshiba Corp | Ion processor |
| JPWO2002084724A1 (en) * | 2001-04-09 | 2004-08-05 | 松下電器産業株式会社 | Surface treatment method and semiconductor device manufacturing apparatus |
| JP4088427B2 (en) * | 2001-06-28 | 2008-05-21 | 株式会社神戸製鋼所 | Plasma deposition system |
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| CN103392222A (en) * | 2011-02-21 | 2013-11-13 | 株式会社山景工程 | Film forming method and film forming device |
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| JP2005005328A (en) | 2005-01-06 |
| WO2004109785A1 (en) | 2004-12-16 |
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