CN1802042A - Method for manufacturing semiconductor electric heating membrane - Google Patents
Method for manufacturing semiconductor electric heating membrane Download PDFInfo
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- CN1802042A CN1802042A CN 200510000047 CN200510000047A CN1802042A CN 1802042 A CN1802042 A CN 1802042A CN 200510000047 CN200510000047 CN 200510000047 CN 200510000047 A CN200510000047 A CN 200510000047A CN 1802042 A CN1802042 A CN 1802042A
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Abstract
Present invention refers to an membrane manufacturing method. It uses sternum, vanadum, chloridate and silicide as main material, adding iron, stibium, indium, etc compound as adulterant uniformity mixing and mixing with solvent media according to special proportion, adding a little mineral acid, when blending agents main material generating oxidation-reduction reaction, then washing up base plate using super sound and clearing by pure water, setting base plate in high temperature furnace to heat slowly according to production line mode, when base plate surface reaching transient point temperature blowing out above-mentioned raw material through nonferrous and acid proof alkaline material made spray nozzle, to become high temperature atomized charged particle and depositing on base plate.
Description
Technical field
The present invention relates to relevant a kind of method for manufacturing semiconductor electric heating membrane.
Background technology
Press, traditional electric calorifie installation mostly for adopting resistance wire, makes it convert electrical heat energy to because of resistance after energising.But not only the cost obtained of material is higher for general resistance wire, simultaneously, the in-plant coiling processing of resistance wire also comparatively trouble with inconvenient.
The resistance wire energising more can produce red naked light phenomenon when using, its power consumption is big and under high temperature uses great oxygen demand is arranged, and destroys indoor air quality easily.Have the naked light phenomenon when using and be not suitable as the equipment of heating as the kind equipment in oil field, frigid zone owing to traditional resistor silk electric calorifie installation.
Now because the evolution fast of semiconductor science and technology, with the made electric calorifie installation of semiconductor and traditional resistor heater than, then have advantages such as high temperature, the flames of anger, power saving and high heating efficiency, safety and manufacturing cost significantly reduce.
In conventional semiconductor Electric radiant Heating Film patent case, it comprises: the Chinese CN1380443A fuzzy control film-coating process for electric heating film patent case of filing an application on March 6th, 2002, and its technology contents is as follows:
Owing to commonly use electrothermic film element in base material being positioned over heating furnace and film liquid high-temperature gasification being sprayed in the stove, base material temperature and film forming efficiency controlled, and can't be ensured product consistency in good time with the process that forms the electric heating oxide-film.Therefore, this patent case is promptly providing a kind of deposited membrane technology of Electric radiant Heating Film that the Electric radiant Heating Film finished product differs that solves.
This patent case mainly is the base material real-time temperature of inserting in the stove can be delivered to default control board, and sends instant film forming efficiency controlling signal by the control board.
In above-mentioned manufacture method, more comprise:
(1) base material film forming thickness in the stove can be delivered to the control board;
(2) can deliver to the control board with applying film pressure in the stove;
(3) controlling signal of control exportable jet mould rifle of board and base material spacing;
(4) controlling signal of the exportable base material translational speed of control board;
(5) controlling signal of the exportable film liquid of control board injection flow;
(6) the control board can be exported above-mentioned various different controlling signal simultaneously.
No. 90126142 device for heating electric heating membrane of Taiwan patent of invention and the electrode structure patent case related content thereof of being filed an application October 23 calendar year 2001 with upright science and technology are as follows:
The action principle of existing Electric radiant Heating Film is mainly and uses width rectangular configuration upper/lower electrode before this patent case application, imposes bias voltage then and produces heat energy.But bias current has bigger current density at the middle section of Electric radiant Heating Film, and the electric current of Electric radiant Heating Film is then on the low side relatively.Therefore cause the overheated and unfavorable shortcoming of the edge efficiency of heating surface of Electric radiant Heating Film central authorities.
Therefore, this patent case main purpose promptly is the efficiency of heating surface that adjustment and configuration mode thereof by electrode width improve Electric radiant Heating Film.
This patent case is reached the technology contents of taking off purpose: be provided with more than one Electric radiant Heating Film between the electrode group more than a group, the two ends width that makes the electrode group is greater than central width, make the electrode group two ends resistance of Electric radiant Heating Film less, by the CURRENT DISTRIBUTION of Electric radiant Heating Film thereby comparatively even, and can improve the shortcoming that existing Electric radiant Heating Film is central overheated and the edge efficiency of heating surface is not good.
Simultaneously, the profile that is connected with Electric radiant Heating Film of electrode group can be arc or waveform.
The method for making patent case of No. 82103268 semiconductor thermoelectric film of Taiwan patent of invention of filing an application on April 26th, 1993 discloses following technical connotation:
Reach shortcomings such as easy oxidation fault greatly owing to use before this patent case application resistance wire to have cost height, power consumption, and ceramic heater (PTC) also has that burst current is big, material expensive, the finished product yield is low and drawback such as cost height during production costs as heater element.The purpose of this patent case is promptly providing a kind of semiconductor thermoelectric film.
This patent case is reached the means of above-mentioned purpose, may further comprise the steps:
(1) raw material modulation: with metallic compound, as gold, silver, tin-----or other organic compounds be added into the compound of 1%-10% weight ratio when the processing procedure, as antimony, iron, fluoro-----as dopant;
(2) material is in harmonious proportion: with the dielectric material of above-mentioned raw materials and 20%-60%, as water, methyl alcohol, hydrochloric acid, ethanol, ethamine, triethylamine-----, evenly mixing;
(3) base material cleaning: can be for the base material of profile member in advance of heating, to count material as the class high temperature resistance low-expansion of quartz, glass, pottery, mica made, clean its surface with the soft water that purifies and also dried;
(4) the high temperature atomizing is grown up: above-mentioned base material is inserted the heating of high temperature furnace chamber make its surface active, more above-mentioned modulated fluent material is sprayed in the high temperature furnace chamber with atomizing, become charged position ion and evenly be coated in substrate surface, form the semiconductor heating film.
This patent case gives comprehensive, comprises following main points: with the metallic compound be main body add dopant modulate → mix with dielectric material → substrate surface cleaning → modulated fluent material sprays into the high temperature furnace chamber with atomizing and grows up and the semiconductor heating film.
But according in the above-mentioned existing Electric radiant Heating Film manufacturing technology, its use raw material and processing procedure are all superior inadequately, and can't produce the semiconductor thermoelectric film that high temperature, power saving and high heating efficiency, safety and manufacturing cost significantly reduce according to this.
Summary of the invention
Main purpose of the present invention is promptly providing a kind of semiconductor thermoelectric film that Electric radiant Heating Film usefulness is higher, cost is lower of commonly seeing.For reaching above-mentioned purpose, manufacture method of the present invention comprises following steps at least;
With tin, the chloride of vanadium and silicide are main body; Add iron in the process of modulation, antimony, the compound of indium etc. are dopant;
Above-mentioned material is evenly mixed; Mix according to special ratios and solvent medium again;
Above-mentioned material is mixed the back inorganic acid that adds a little work as blending agents, make solvent medium and main body produce redox reaction, and after a substrate cleaned with ultrasonic waves, with the pure water cleaning, substrate is put into high temperature furnace, again according to the mode of heating of streamline, substrate is slowly heated, when substrate surface reaches the transient point temperature, again above-mentioned raw materials is flowed through with the shower nozzle of non iron and acid and alkali-resistance material made, the high temperature atomizing is deposited on the substrate for vaporific charged particle then.
The present invention compared with prior art has remarkable advantages and beneficial effect:
Electric radiant Heating Film of the present invention is when being applied to heater, heater integral body includes a base material, base material simultaneously is provided with the electric membranous layer that is heating, these electric membranous layer two sides have the electrode with its electrically connect, by the conduction of electrode, cooperate electric membranous layer and base material promptly can evenly heat heating object inside with far infrared.
In addition, can coating one deck heat-resistant insulating layer on the electric membranous layer of the present invention on using, this high temperature insulation layer material is an inorganic material because heating surface is positioned at the back side of electric membranous layer, with the Electric radiant Heating Film aspect coated with heat-resistant insulating layer in order to disconnected heat, guarantee safety.
Description of drawings
Embodiment front elevation when Fig. 1 is applied to heater for the present invention.
Embodiment sectional drawing when Fig. 2 is applied to heater for the present invention.
Embodiment
Novelty of the present invention and other characteristics will preferable enforcement below cooperating detailed description.
In an embodiment, the solvent medium of above-mentioned method for making can be water, methyl alcohol, ethanol, hydrochloric acid, sulfuric acid etc.
In preferred embodiment, the base material of above-mentioned method for making can be counted material such as enamel, quartz, glass and pottery etc. for low bulk high temperature resistant and insulation.
In desirable embodiment, the temperature that the atomizing of above-mentioned method for making is grown up is 500-10000, and the required time is 1-10 minute.
In preferred embodiment, the atomizing growth thickness of above-mentioned method for making is between 0.5-5 μ m.
In an embodiment, the present invention comprises following steps at least:
With tin, the chloride of vanadium and silicide are material of main part, what material of main part was preferable is the fine-powdered of subparticle, the iron, the antimony that in the process of modulation, add fine-powdered, the compound of indium etc. is as dopant, and its composition is the 0.01-1% of material of main part, and above-mentioned material is evenly mixed, and mix according to the medium of special ratios and solvent, the proportion of solvent medium be the raw material that is modulated into 10～30% for preferable.
After above-mentioned raw materials mixed, the inorganic acids such as nitric acid, hydrochloric acid or sulfuric acid that add a little were worked as blending agents, make the characteristic of medium and material of main part be more prone to affinity, and and main body produce redox reaction; Then a substrate is cleaned with ultrasonic waves, clean with pure water again, and substrate is put into the mode of heating of high temperature furnace according to streamline (in line), substrate is slowly heated, when substrate surface reaches the transient point temperature, more above-mentioned feed stream is deposited on the substrate for vaporific charged particle through atomizing with non iron and made shower nozzle ejection the becoming high temperature of acid and alkali-resistance material.
In the above-mentioned manufacturing step, solvent medium can be water, methyl alcohol, ethanol, hydrochloric acid, sulfuric acid etc.
In preferred embodiment, the base material of above-mentioned method for making can be counted material such as enamel, quartz, glass and pottery etc. for low bulk high temperature resistant and insulation.
In desirable embodiment, the temperature that the atomizing of above-mentioned method for making is grown up is 500-10000, and the required time is 1-10 minute.
In preferred embodiment, the atomizing growth thickness of above-mentioned method for making is between 0.5-5 μ m.
And in the above-mentioned manufacturing step, its base material can be counted material for low bulk high temperature resistant and the tool insulation effect, and as enamel, quartz, glass and pottery etc., the thickness of base material is decided by the needs on using.
In the above-mentioned again manufacturing step, its temperature of growing up that atomizes in high temperature furnace is 500-1000.C, the required time is 1-10 minute.
In the above-mentioned method for making, the deposition Electric radiant Heating Film thickness that its atomizing is grown up is between 0.5-5 μ m.
According to above-mentioned method for making of the present invention, not only can make more superior semiconductor thermoelectric film, simultaneously, the cost of its semiconductor thermoelectric film is lower, and usefulness is higher.
Electric radiant Heating Film of the present invention is when being applied to heater, can be as Fig. 1 and shown in Figure 2, heater integral body includes a base material 1, base material 1 one side is provided with the electric membranous layer 2 that is heating, these electric membranous layer 2 two sides have the electrode 3 with its electrically connect, by the conduction of electrode 3, cooperate electric membranous layer 2 and base material 1 promptly can evenly heat heating object inside with far infrared.
In addition, on using, can coating one deck heat-resistant insulating layer 4 on the electric membranous layer 2 of the present invention, this high temperature insulation layer material is an inorganic material, because heating surface is positioned at the back side of electric membranous layer 2,2 of electric membranous layers is warm in order to break coated with heat-resistant insulating layer 4, guarantee safety.
It should be noted that at last: above embodiment only in order to the explanation the present invention and and unrestricted technical scheme described in the invention; Therefore, although this specification has been described in detail the present invention with reference to each above-mentioned embodiment,, those of ordinary skill in the art should be appreciated that still and can make amendment or be equal to replacement the present invention; And all do not break away from the technical scheme and the improvement thereof of the spirit and scope of invention, and it all should be encompassed in the middle of the claim scope of the present invention.
Claims (8)
1, a kind of method for manufacturing semiconductor electric heating membrane is characterized in that comprising the following steps:
With tin, the chloride of vanadium and silicide are material of main part, thereafter, in the process of modulation, add iron, antimony, compounds such as indium are as dopant, its composition is the 0.01-1% of material of main part, above-mentioned material is evenly mixed, and mix according to special ratios and solvent medium;
Above-mentioned raw materials is mixed the inorganic acid that the back adds a little produce redox reaction when blending agents makes itself and material of main part; And
Clean with pure water again after one substrate cleaned with ultrasonic waves, substrate is put into high temperature furnace slowly to be heated substrate according to the mode of heating of streamline (in line), when substrate surface reaches the transient point temperature, again above-mentioned raw materials is sprayed through non iron and the made shower nozzle of acid and alkali-resistance material, become the high temperature atomizing and be deposited on the substrate for vaporific charged particle.
2, manufacture method according to claim 1 is characterized in that above-mentioned medium is a water, methyl alcohol, alcohol hydrochloric acid, sulfuric acid.
3, manufacture method according to claim 1 is characterized in that aforesaid substrate is that low bulk high temperature resistant and insulation is counted material such as enamel, quartz, glass and pottery.
4, manufacture method according to claim 1 is characterized in that the temperature that above-mentioned atomizing is grown up is 500-1000.C, the required time is 1-10 minute.
5, manufacture method according to claim 1, the thickness that it is characterized in that above-mentioned atomizing growth is between 0.5-5 μ m.
6, manufacture method according to claim 1, the proportion that it is characterized in that solvent medium are 10～30% of the raw material that is modulated into.
7, manufacture method according to claim 1 is characterized in that material of main part is the fine-powdered of subparticle.
8, manufacture method according to claim 1 is characterized in that blending agents is nitric acid, hydrochloric acid or sulfuric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100000479A CN100441056C (en) | 2005-01-05 | 2005-01-05 | Method for manufacturing semiconductor electric heating membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100000479A CN100441056C (en) | 2005-01-05 | 2005-01-05 | Method for manufacturing semiconductor electric heating membrane |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101531215A Division CN100440334C (en) | 2004-01-30 | 2005-01-26 | Optical recording method, optical recording apparatus and optical storage medium |
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| Publication Number | Publication Date |
|---|---|
| CN1802042A true CN1802042A (en) | 2006-07-12 |
| CN100441056C CN100441056C (en) | 2008-12-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005100000479A Expired - Fee Related CN100441056C (en) | 2005-01-05 | 2005-01-05 | Method for manufacturing semiconductor electric heating membrane |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10499505B2 (en) | 2017-09-13 | 2019-12-03 | Molex, Llc | Electrical conductive module |
| CN111304590A (en) * | 2019-12-28 | 2020-06-19 | 彭文婷 | Vanadium nano electrothermal material |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1013334B (en) * | 1988-01-06 | 1991-07-24 | 孔德凯 | High power electrothermal convertor and processing technique thereof |
| CN1051059A (en) * | 1989-10-14 | 1991-05-01 | 北京华岳电子技术开发公司 | A kind of transparent semiconductor electric heating film |
| CN1036432C (en) * | 1992-07-09 | 1997-11-12 | 连铁军 | Thermostable transparent electric heating film and its producing method |
| TW238409B (en) * | 1993-04-26 | 1995-01-11 | Process of thermal film for semiconductor | |
| CN1153845C (en) * | 1999-06-10 | 2004-06-16 | 罗敏 | Composition and making process of electrothermal semiconductor film |
| CN1257310C (en) * | 2002-03-06 | 2006-05-24 | 何平 | Fuzzy control film-coating process for electric heating film |
| CN100349498C (en) * | 2003-10-17 | 2007-11-14 | 杨金林 | Electric-heating film and manufacturing method thereof |
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2005
- 2005-01-05 CN CNB2005100000479A patent/CN100441056C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10499505B2 (en) | 2017-09-13 | 2019-12-03 | Molex, Llc | Electrical conductive module |
| CN111304590A (en) * | 2019-12-28 | 2020-06-19 | 彭文婷 | Vanadium nano electrothermal material |
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| CN100441056C (en) | 2008-12-03 |
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Granted publication date: 20081203 Termination date: 20100205 |