CN1797795A - Method for preparing LED chip with 2D natural scattered faces for outputting light - Google Patents
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Abstract
Based on laser lift-off technology and inverted packaging technique, the invention discloses method for preparing 2D scattering face formed at phase of epitaxial growth for outputting light possessing good effect of guiding out light so that light emitting diode with high optical power can be obtained. Controlling microscopic size of 2D scattering face for outputting light obtains high carrier concentration on surface at n type zone so as to form good ohmic contact, which also possesses important meaning for improving characteristics of LED in vertical structure. Being located at interface between substrate and GaN epitaxial layer, the 2D scattering face also reduces stress generated by laser irradiation at the said interface so as to reduce impairment in laser lift-off process as well as displace of luminescence spectrum, and ensure lift-off process to obtain LED in high performance.
Description
Technical field
This invention belongs to field of photoelectric technology, is specifically related to the method for a kind of power type semiconductor light-emitting diode of preparation (LED) chip of a kind of bond organic-matter chemical vapour deposition (MOCVD) growth technology, laser lift-off and face-down bonding technique.
Background technology
Usually GaN base LED is the multi-quantum pit structure with MOCVD growth on the Sapphire Substrate, because differing greatly of lattice mismatch, thermal coefficient of expansion, make stress accumulation and release in the chip epitaxial loayer in epitaxial growth stage and produce a large amount of dislocations, fundamentally restricted the raising of LED power; Simultaneously, because Sapphire Substrate is an electric insulation, make that the LED of conventional structure is the planar structure of n electrode and the preparation on same one side of p electrode, again because the n electrode is the p type layer on surface and active area are etched away and to form on the n type layer that exposes, so n type electrode zone is light-emitting zone not, effective light-emitting zone is reduced, and the light absorption of p electrode layer and contact layer also is the key factor of light loss; Aspect photoconduction goes out and since GaN with air refraction rate variance big (the GaN refractive index is 2.5), during the bright dipping of p face, have only about 4% can penetrate chip, thereby become and suppress the luminous power principal element.In addition, the heat dissipation problem of the Sapphire Substrate of majority use at present also affects the characteristic of power-type LED widely.
At the problems referred to above, solution mainly contains at present:
(1) crystal technique of minimizing dislocation density, selecting laterally overgrown is the improved MOCVD growing method that the research report is more, use extensively, can effectively reduce dislocation density, uses this method can improve the internal quantum efficiency of luminescent device effectively.With Japanese Ri Ya company Shuji Nakamura etc. is that the result of representative has shown that epitaxial lateral overgrowth technology (LEO) can run through dislocation and reduce by 2 orders of magnitude, and successfully being used for the preparation of GaN base laser, the research that is used to improve the UV-light luminous device property also has suitable report.But the epitaxial lateral overgrowth technology that is successfully applied to batch process still remains to be developed.
(2) adopt the SiC substrate that conducts electricity, the led chip of preparation vertical electrode structure, U.S. CREE company is its main product with the LED of SiC substrate, but has SiC LED cost height, problem of difficult processing.
(3) laser lift-off Sapphire Substrate, preparation vertical electrode structure LED, a Japan day Osram company inferior and Germany has released this technology and relevant device, become a developing direction that merits attention, but because n electrode preparation, the difficulty of chip bonding (wafer bonding) technical elements does not still have industrialization;
(4) various optical textures of design and electrode structure are to improve the derivation efficient of light.Utilize the notion of photonic crystal,, can improve the derivation efficient of light the output optical zone design; The surface coarsening technology that people such as middle village propose is processed into the rough surface that helps bright dipping with the LED output optical zone, and luminous power has been improved 2-3 doubly.The design of electrode structure can realize uniform CURRENT DISTRIBUTION, and effectively light-emitting zone increases, and this is extremely important concerning the power-type LED tube core;
(5) fall encapsulating structure owing to avoid the P electrode and the P-GaN absorption, because the sapphire refractive index is lower than GaN, even do not peel off Sapphire Substrate, also can significantly improve luminous power more than 1.5 times, the patent US6573537 B1 of propositions such as the result of reports such as the J.J.Wierer of U.S. LumiledsLighting and Daniel Steigerwald shows that the flip-chip light extraction efficiency improves 1.6 times.
Although above the whole bag of tricks has been realized the preparation of power-type LED to a certain extent, also all there is multiple adverse factors in each method, the light-emitting diode that therefore obtains to have higher luminous power remains problem to be solved in the art.
Summary of the invention
Purpose of the present invention proposes a kind of based on laser lift-off technique and face-down bonding technique exactly, to have good light when epitaxial growth derives the two-dimensional scattering exiting surface of effect, be formed on the LED structure in epitaxial growth stage physical relief, and acquisition has the preparation method of the light-emitting diode of higher luminous power.
By controlling the microscopic dimensions of this two-dimensional scattering exiting surface, can also obtain higher carrier concentration on surface, n type district, thereby form good Ohmic contact, the improvement of the characteristic of the LED of vertical stratification is had great importance.
Be positioned at substrate and GaN epitaxial layer interface place two-dimensional scattering exiting surface, can also in the laser lift-off process, reduce the stress that GaN and Sapphire Substrate produce owing to laser irradiation at the interface, reduce the damage in the stripping process, the luminescent spectrum stress that reduces LED before and after peeling off changes and is moved, and obtains high performance LED to guarantee at the bottom of the peeling liner.
What the present invention proposed advances the netted groove substrate processing capable in epitaxial growth, and technical process is simple, is easy to realize, is the effective ways that improve the light-emitting diodes tube efficiency.
A kind of preparation method who has the light-emitting diode of 2 D natural scattered faces for outputting light of the present invention has following main points:
1. on epitaxially grown substrate, form latticed figure, be different from the list structure substrate of present conventional epitaxial lateral overgrowth through etching.
2. Grown GaN on the latticed ditch groove substrate has two-dimentional laterally overgrown mechanism, and its dislocation density is low, and crystal mass is good, and is significant to improving the luminous internal quantum efficiency of LED.
3. on the LED epitaxial loayer of growing on the latticed patterned substrate, evaporation high-reflectivity metal composite bed Ni/Au/Ni/Al/Ni/Au realizes good Ohmic contact simultaneously, and thickness is respectively 50 /50 /100 /3500 /200 /2000 .In the composite bed, Ni/Au plays the effect of ohmic contact, Ni layer of 100 intercepts Al and contacts formation with Au to the disadvantageous complex of ohmic contact on it, the thickness of Al high refractive index layer can be from 700 ～4000 , and uppermost Ni and Au help in the flip chip bonding technology welding with Si support substrates (submount).
4. in the laser lift-off process, scattered faces for outputting light can reduce the stress that GaN and Sapphire Substrate produce owing to laser irradiation at the interface, reduce the damage in the stripping process, the luminescent spectrum stress that reduces LED before and after peeling off changes and is moved, and obtains high performance LED to guarantee at the bottom of the peeling liner.Use the laser lift-off of less energy, reduce damage.The technology that epitaxial loayer on the latticed ditch groove substrate carries out laser lift-off is: KrF laser, wavelength 248nm, laser scans frequency 1Hz, energy of lasers density 400-500mJ/cm
2
5. evaporation Ti/Al/Ti/Au on growing n-type GaN face on the netted groove substrate forms ohmic contact layer and solder joint.Compare with common chip, the n-GaN layer has higher carrier concentration, and touch voltage can be lower, because the subregion in the laterally overgrown layer, donor impurity has higher ionization tendency.
6.N electrode is to be of value to current expansion and less than the design of whole lighting area 10%.
7. be exiting surface with n type GaN, because the growth of latticed ditch groove substrate, exiting surface is 2 D natural scattered, and photoconduction goes out efficient and is improved.
According to a kind of preparation method who has the light-emitting diode of 2 D natural scattered faces for outputting light of the present invention, concrete technical scheme has three kinds, describes the concrete steps of each technical scheme below in detail:
Have the preparation method one of the light-emitting diode of 2 D natural scattered faces for outputting light, concrete steps are as follows:
1. on Sapphire Substrate, carry out latticed etching groove; Because sapphire hardness is higher, common lithographic method has suitable difficulty, uses reactive ion etching (RIE) and induces coupled plasma (ICP) etching in our experiment.
2. having on the substrate of netted groove growing n-type GaN, LED active layer, p type GaN successively; Epitaxial wafer also will carry out conventional P type and activate annealing.
3. on p-GaN, prepare electrode and reflector; Electrode metal wants to obtain the good ohmic contact, and also will consider simultaneously with the reflector metal that plays the mirror surface effect has good adhesive attraction, to pass through alloy after the deposit and obtain and p-GaN between ohmic contact; Being chosen as reflectivity height, good stability, good adhesiveness being arranged of reflector metal with the ohmic contact layer metal, the metal that ohmic contact is had no adverse effects.We adopt multilayer metal compound structure Ni/Au/Ni/Al/Ni/Au through research, to obtain high reflectance, LED that electrology characteristic is good.
4. the above-mentioned P of having electrode LED epitaxial wafer is bonded on the support substrates such as Si or Cu, is placed on and takes bubble in the glue in the vacuum chamber away, guarantee evenly tight contact the in nothing cavity of epitaxial wafer and support substrates surface.
5. laser lift-off is removed the Sapphire Substrate that is difficult to process.In conjunction with laser lift-off technique, adopt more low-energy laser beam, reduce in stripping process the damage of crystal at the interface as far as possible.Peel off finish after, need to remove the metal Ga that dissolves in epi-layer surface.
6. on the n-GaN face, finish the n electrode preparation; Because the requirement of scattered faces for outputting light, the n electrode will occupy less area as far as possible, designs electrode size usually on the minimum requirements yardstick that guarantees bonding wire.
At last, through attenuate, scribing, be prepared into the LED of vertical electrode structure.
Have the preparation method two of the light-emitting diode of 2 D natural scattered faces for outputting light, concrete steps are as follows:
1. at first grown buffer layer and heavily doped n-GaN epitaxial loayer on Sapphire Substrate; The etching depth of the two-dimensional scattering exiting surface of this two layers thickness and design is suitable.
2. carry out latticed etching groove GaN, compare with the etching sapphire, technology difficulty is little, is easy to realize.
3. having the Si Doped GaN of growing successively on the substrate of netted groove, LED active layer, p type GaN, epitaxial wafer also will carry out conventional P type and activate annealing.
4. on p-GaN, prepare electrode and reflector, electrode metal wants to obtain the good ohmic contact, also will consider simultaneously with the reflector metal that plays the mirror surface effect has good adhesive attraction, to pass through alloy after the deposit and obtain and p-GaN between ohmic contact; Being chosen as reflectivity height, good stability, good adhesiveness being arranged of reflector metal with the ohmic contact layer metal, the metal that ohmic contact is had no adverse effects.We adopt multilayer metal compound structure Ni/Au/Ni/Al/Ni/Au through research, to obtain high reflectance, LED that electrology characteristic is good.
5. the above-mentioned P of having electrode LED epitaxial wafer is bonded on the support substrates such as Si or Cu, is placed on and takes bubble in the glue in the vacuum chamber away, guarantee that epitaxial wafer and support substrates show even tight contact of not having the cavity.
6. laser lift-off is removed the Sapphire Substrate that is difficult to process.In conjunction with laser lift-off technique, adopt more low-energy laser beam, reduce in stripping process the damage of crystal at the interface as far as possible.Peel off finish after, need to remove the metal Ga that dissolves in epi-layer surface.
7. finish the n electrode preparation on the n-GaN face, because the requirement of scattered faces for outputting light, the n electrode will occupy less area as far as possible, designs electrode size usually on the minimum requirements yardstick that guarantees bonding wire.
At last, through attenuate, scribing, be prepared into the LED of vertical electrode structure.
In this scheme, when the etching depth of step 2 during less than the thickness of GaN epitaxial loayer in the step 1, the n electrode is to be prepared on the more smooth GaN release surface in step 7, for fear of the GaN layer to the particularly absorption of short-wavelength light of light, the difference that should be noted that the thickness of GaN epitaxial loayer in etching depth and the step 1 should be as far as possible little.When the etching depth of step 2 equals the thickness of GaN epitaxial loayer in the step 1, the n electrode is to be prepared on the GaN release surface of scattered faces for outputting light in step 7.The n electrode characteristic of two kinds of situations can be different.
Have the preparation method three of the light-emitting diode of 2 D natural scattered faces for outputting light, concrete steps are as follows:
1. utilization hydride gas-phase epitaxy (HVPE) or additive method prepares highly doped n-GaN thick film, with GaN thick film or the n-GaN monocrystalline epitaxial growth substrate as the LED structure.
2. etching GaN becomes latticed groove structure substrate, uses the latticed groove structure substrate of GaN, will obtain higher-quality epitaxially grown layer.
3. having on the substrate of netted groove growing n-type GaN, LED active layer, p type GaN successively, epitaxial wafer also will carry out conventional P type and activate annealing.
4. on p-GaN, prepare electrode and reflector, electrode metal wants to obtain the good ohmic contact, also will consider simultaneously with the reflector metal that plays the mirror surface effect has good adhesive attraction, to pass through alloy after the deposit and obtain and p-GaN between ohmic contact; Being chosen as reflectivity height, good stability, good adhesiveness being arranged of reflector metal with the ohmic contact layer metal, the metal that ohmic contact is had no adverse effects.We adopt multilayer metal compound structure Ni/Au/Ni/Al/Ni/Au through research, to obtain high reflectance, LED that electrology characteristic is good.
5. finish the n electrode preparation on the n-GaN face, because the requirement of scattered faces for outputting light, the n electrode will occupy less area as far as possible, designs electrode size usually on the minimum requirements yardstick that guarantees bonding wire.
At last, attenuate, scribing are prepared into the LED of vertical electrode structure.
In the application of the method, the light of considering the short wavelength is by the absorption of GaN layer, can the bright dipping of P face, and therefore, step 4 should be n-GaN and goes up preparation electrode and reflector, finishes P-GaN in the step 5 and goes up the electrode that guarantees lighting area.
Above-mentioned three kinds of methods are equally applicable to have in the epitaxial loayer scattered faces for outputting light preparation of the LED of AlGaN electronic barrier layer.
Description of drawings
Below in conjunction with accompanying drawing the present invention is illustrated in further detail:
Fig. 1 processes the latticed groove substrate graphic structure in back;
The relation of Fig. 2 Al layer thickness and reflectivity (light wavelength is 400nm);
Fig. 3 n type electrode plane figure;
Fig. 4 (a)～(g) is for having the led chip preparation process of natural scattered faces for outputting light.
Most preferred embodiment is described in detail
Below with reference to accompanying drawing of the present invention, more detailed description goes out most preferred embodiment of the present invention.
Be depicted as the led chip preparation process that has natural scattered faces for outputting light as Fig. 4 (a)～(g), the trench portions that 1 expression etches among the figure, the 2nd, Sapphire Substrate or GaN substrate, the 3rd, semiconductor contact layer, the 4th, metal electrode, 5P-GaN, the 6th, LED active area (MQWs), the 7th, n-GaN, the 8th, transparency electrode (Ni/Au), the 9th, reflector, the 10th, support substrates (Si or Cu), the 11st, salient point metal (Au-Sn alloy), the 12nd, n electrode metal (Ti/Al/Ai/Au), the 13rd, natural scattered faces for outputting light.Describe most preferred embodiment one concrete steps in detail below in conjunction with accompanying drawing:
(a) on Sapphire Substrate, etch latticed figure with two-dimensional groove;
Figure 1 shows that the latticed groove substrate graphic structure in processing back, the schematic surface of the latticed groove substrate graphic structure in Fig. 1 a processing back; The schematic cross-section of the latticed groove substrate graphic structure in Fig. 1 b processing back; 1 is the trench portions that etches among the figure, and 2 is Sapphire Substrate or GaN substrate; Wherein the width of trench portions 1 is 3 μ～5 μ, spacing 3 μ-5 μ, ditch groove depth 0.5～1 μ.
(b) on the substrate that (a) step obtains, growth LED epitaxial loayer, and carry out the P type and activate annealing.
(c) evaporation transparency electrode Ni (50～100 )/Au (50～100 ) on GaN base LED epitaxial wafer p face, 500 ℃ of following alloys 5 minutes in oxygen atmosphere then.
(d) evaporation Ni (50～100 )/Al (300～500 )/Ni (200 )/Au (2000 ) reflector 9 on transparency electrode.Figure 2 shows that the graph of relation of Al layer thickness and reflectivity, wherein light wavelength is 400nm, and the thickness of Al film can be adjusted according to concrete data among Fig. 2 in the reflector.
(e) prepare SiO on Si or the Cu substrate
2Insulating barrier, evaporation Au-Sn alloy or other can be used for the metal bumps of bonding.
(f) at 280～350 ℃ of following LED epitaxial wafers and Si substrate or copper substrate bonding.
(g) shine from sapphire substrate side with the KrF excimer laser, peel off Sapphire Substrate, laser wavelength 248nm, irradiation energy density 400-600mJ/cm
2, scanning frequency is 1Hz;
(h), peel off acquisition n electrode through figure at n-GaN 7 surperficial evaporating n electrode metals; Be illustrated in figure 3 as n type electrode plane figure, 3 expression semiconductor contact layers among the figure, 4 expression metal electrodes, electrode structure is Ti200 /Al200～300 /Ti100～200 /Au4000 .
(i) last, cut apart through attenuate, scribing, then obtain the led chip of high-power vertical electrode structure.Most preferred embodiment two technical schemes are as follows, and the concrete steps of present embodiments are described with reference to figure 4:
(a) growing GaN resilient coating and heavily doped n-GaN 7 epitaxial loayers on Sapphire Substrate, about 1 μ of bed thickness～1.5 μ.
(b) etch latticed figure on the substrate that in (a) step, obtains and (see figure with two-dimensional groove
1), groove width is 3 μ～5 μ in the figure, spacing 3 μ-5 μ, ditch groove depth～1 μ or～1.5 μ.
(c) on the patterned substrate that (b) step obtains, growth LED epitaxial loayer.
(d) evaporation transparency electrode Ni (50 )/Au (50 ) on GaN base LED epitaxial wafer p face, 500 ℃ of following alloys 5 minutes under oxygen then.
(e) evaporation Ni (50～100 )/Al (3～500 )/Ni (200 )/Au (2000 ) reflector on transparency electrode, the thickness of Al film can be according to data adjustment among Fig. 2 in the reflector.
(f) prepare SiO on Si or the Cu substrate
2Insulating barrier, evaporation Au-Sn alloy or other can be used for the metal bumps of bonding.
(g) at 280～350 ℃ of following LED epitaxial wafers and Si substrate or copper substrate bonding.
(h) shine from sapphire substrate side with the KrF excimer laser, peel off Sapphire Substrate, laser wavelength 248nm, irradiation energy density 400-600mJ/cm
2, scanning frequency is 1Hz;
(i) at n-GaN 7 surperficial evaporating n electrode such as Fig. 3, electrode structure is Ti200 /Al200～300 /Ti100～200 /Au4000 .
(k) last, cut apart epitaxial wafer through attenuate, scribing, encapsulate, then obtain the flip LED chips of high-power vertical electrode structure.
In this technical scheme, the bed thickness of corresponding step (a), the etching depth of step (b) should notice that both differences should be the smaller the better during less than bed thickness.
Most preferred embodiment three technical schemes are as follows, and the concrete steps of present embodiments are described with reference to figure 4:
(a) on the GaN substrate of HVPE or additive method acquisition, etch the latticed figure (see figure 1) with two-dimensional groove, groove width is 3 μ～5 μ in the figure, spacing 3 μ-5 μ, ditch groove depth 0.5～1 μ.
(b) on the substrate that (a) step obtains, growth LED epitaxial loayer.
(c) evaporation transparency electrode Ni (50 )/Au (50 ) on GaN base LED epitaxial wafer p face, 500 ℃ of following alloys 5 minutes under oxygen then.
(d) evaporation Ni (50～100 )/Al (300～500 )/Ni (200 )/Au (2000 ) reflector on transparency electrode, the thickness of Al layer can be according to the data adjustment of Fig. 2 in the reflector.
(e) at n-GaN surface evaporating n electrode such as Fig. 3, electrode structure is Ti200 /Al 200～300 /Ti100～200 /Au4000 .
(f) last, cut apart through attenuate, scribing, then obtain the flip LED chips of high-power vertical electrode structure.
On the basis of GaN substrate, use the groove figure meeting to obtain more high-quality epitaxial loayer in this technical scheme, raising to the luminous efficiency of short-wave long light-emitting device is significant, when this scheme of application prepares the short-wave long light-emitting device, for avoiding the absorption of GaN to light, can take the packaged type of p face bright dipping, thereby step (d) should change into and adopt Fig. 3 to prepare the P electrode, and step (e) changes whole evaporation into and obtains the n electrode.
In three most preferred embodiments of the preparation method of above corresponding three kinds of 2 D natural scattered faces for outputting light LED, increase the AlGaN electronic barrier layer in the epitaxial growth steps, will obtain to have the LED of 2 D natural scattered faces for outputting light and AlGaN electronic barrier layer.
The advantage of this invention:
(1) etching obtains the X-Y scheme substrate, obtains the lower high-quality epitaxial loayer of average dislocation density after the lateral growth, improves the luminous efficiency of led chip.
(2) directly on substrate etching form X-Y scheme, approaching with common GaN-based LED growth technique, realize volume production easily;
(3) grow on graph substrate, method one and method two can be avoided SiO
2The pollution that in growth, brings etc. the mask that uses in the conventional method;
(4) the two-dimensional scattering exiting surface of formation nature in the growth can improve luminous power;
(5) in method one and the method two, the laterally overgrown of twocouese obtains to have higher carrier concentration n type GaN contact layer, has improved n type electrode quality, has reduced operating voltage;
(6) the Al lamination layer structure of high reflectance is adopted in p type reflector, improves chip light-emitting efficiency.
This invention provides new method to GaN based high-power light-emitting device, use the LED of this method preparation, having becomes the vertical electrode of main flow potentiality structure, thereby luminous power and thermal characteristic are good, and owing to adopt the two-dimensional scattering face bright dipping that forms naturally in the growth course, luminous power can further improve.People such as T.Fuji report that luminous power is proportional to the exiting surface roughness, and after the optimization process conditions, luminous power can improve more than 2-3 times.Compare with the method for the raising light extraction efficiency of present report, led chip preparation process involved in the present invention is simple, helps realizing industrialization.
Although disclose most preferred embodiment of the present invention and accompanying drawing for the purpose of illustration, it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various replacements, variation and modification all are possible.Therefore, the present invention should not be limited to most preferred embodiment and the disclosed content of accompanying drawing.
Claims (10)
1. preparation method who has the led chip of 2 D natural scattered faces for outputting light specifically may further comprise the steps:
1) on Sapphire Substrate, carries out latticed etching groove;
2) having on the substrate of netted groove growing n-type GaN, LED active layer, p type GaN successively, epitaxial wafer also will carry out conventional P type and activate annealing;
3) the multilayer metal compound structure is adopted in preparation electrode and reflector on p-GaN;
4) the above-mentioned P of having electrode LED epitaxial wafer is bonded on Si or the Cu support substrates, is placed on and takes bubble in the glue in the vacuum chamber away;
5) laser lift-off is removed Sapphire Substrate;
6) on the n-GaN face, finish the n electrode preparation;
7) attenuate, scribing are prepared into the led chip of vertical electrode structure.
2. the preparation method who has the led chip of 2 D natural scattered faces for outputting light according to claim 1 is characterized in that: with growth technology growth AlGaN electronic barrier layer.
3. the preparation method who has the led chip of 2 D natural scattered faces for outputting light according to claim 1 is characterized in that: adopt more low-energy laser beam in the laser lift-off process.
4. the preparation method who has the led chip of 2 D natural scattered faces for outputting light according to claim 1 is characterized in that: when carrying out latticed etching groove, with reactive ion etching or induce the coupled plasma etching.
5. the preparation method who has the led chip of 2 D natural scattered faces for outputting light according to claim 1 is characterized in that: form latticed figure through etching on epitaxially grown substrate, and obtain vertical stratification LED through laser lift-off.
6. preparation method who has the led chip of 2 D natural scattered faces for outputting light specifically may further comprise the steps:
1) at first grown buffer layer and heavily doped n-GaN epitaxial loayer on Sapphire Substrate;
2) carry out the latticed etching groove of GaN;
3) having the Si Doped GaN of growing successively on the substrate of netted groove, LED active layer, p type GaN, epitaxial wafer also will carry out conventional P type and activate annealing;
4) the multilayer metal compound structure is adopted in preparation electrode and reflector on p-GaN;
5) the above-mentioned P of having electrode LED epitaxial wafer is bonded on Si or the Cu support substrates, is placed on and takes bubble in the glue in the vacuum chamber away;
6) laser lift-off is removed Sapphire Substrate;
7) on the n-GaN face, finish the n electrode preparation;
8) attenuate, scribing are prepared into the LED of vertical electrode structure.
7. the preparation method who has the led chip of 2 D natural scattered faces for outputting light according to claim 6 is characterized in that: form latticed figure through etching on epitaxially grown substrate, and obtain vertical stratification LED through laser lift-off.
8. preparation method who has the led chip of 2 D natural scattered faces for outputting light specifically may further comprise the steps:
1) the highly doped n-GaN thick film of preparation is with GaN thick film or the n-GaN monocrystalline epitaxial growth substrate as the LED structure;
2) etching GaN becomes latticed groove structure substrate, uses the latticed groove structure substrate of GaN;
3) having the Si Doped GaN of growing successively on the substrate of netted groove, LED epitaxial loayer, p type contact layer, epitaxial wafer also will carry out conventional P type and activate annealing;
4) preparation electrode and reflector on p-GaN, electrode adopts the multilayer metal compound structure;
5) on the n-GaN face, finish the n electrode preparation;
6) attenuate, scribing are prepared into the LED of vertical electrode structure.
9. the preparation method who has the led chip of 2 D natural scattered faces for outputting light according to claim 8, it is characterized in that, further may further comprise the steps: the n electrode that the last preparation of n-GaN has reflex, the last preparation of P-GaN has the P electrode of light action, and Chip Packaging is become the LED of vertical electrode structure.
10. the preparation method who has the led chip of 2 D natural scattered faces for outputting light according to claim 8 is characterized in that: form latticed figure through etching on epitaxially grown substrate, be different from the list structure substrate of present conventional epitaxial lateral overgrowth.
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2004
- 2004-12-27 CN CNB2004101018333A patent/CN100435360C/en not_active Expired - Fee Related
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