CN1501518A - Light-emitting component with silicon carbide as substrate - Google Patents
Light-emitting component with silicon carbide as substrate Download PDFInfo
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- CN1501518A CN1501518A CNA021492867A CN02149286A CN1501518A CN 1501518 A CN1501518 A CN 1501518A CN A021492867 A CNA021492867 A CN A021492867A CN 02149286 A CN02149286 A CN 02149286A CN 1501518 A CN1501518 A CN 1501518A
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Abstract
A light-emitting component using silicon carbide as substrate which mainly comprises, a silicon carbide substrate, whose upper surface is covered by a boron phosphide breaker, type I gallium nitride bonding layer covering boron phosphide breaker surface, a reactive layer covering the type I gallium nitride bonding layer surface and a type II gallium nitride bonding layer covering the reactive layer surface. The invention can reduce the process complexity and minimizing the drawbacks caused by mismatching crystal lattice.
Description
Technical field
The present invention discloses a kind of light-emitting component (light emitting device), particularly relevant for a kind of be a substrate and to cooperate a boron phosphide be the semiconductor light-emitting elements of resilient coating with carborundum (3C-SiC), promptly a kind of is the light-emitting component of substrate with carborundum.
Background technology
Generally speaking, semiconductor light-emitting elements mainly comprises the light-emitting component of two types of light-emitting diode (light emitting diode) and laser diode (laser diode) etc.The light wavelength that it sent can contain infrared light, visible light and ultraviolet light.Cardinal principle is by IIIA family on the periodic table of chemical element and VA family, or mixes the compound semiconductor that forms by IIA family with VIA family element and constituted.Just at present, these light-emitting components are grown up epitaxial layer on sapphire (sapphire), substrate that GaP, InP or GaAs were constituted mostly.
With reference to shown in Figure 1, be the section of structure that shows a traditional InGaN light-emitting component.This light-emitting component 10 be sapphire with insulation as a substrate 100, the light-emitting component of making of heap of stone brilliant on the C{0001} of described sapphire substrate 100 face.Label 102 is to show a resilient coating, is made of gallium nitride (GaN) usually, and it mainly acts on the lattice that is to reduce between substrate 100 and the follow-up epitaxial layer do not match (latticemismatch).104 of labels are one first type GaN epitaxial layer through overdoping, increasing its conductivity, and are provided with the first type electrode 116 with identical conduction kenel on its surface.As for, label 106 is to show first bond course (cladding layer), is that the gallium nitride (hexagonal GaN) by six side's closest packings is constituted.Label 108 is to show an active layer (active layer), normally is made of gallium nitride based semiconductor, and for example InGaN is the zone that produces light source.Subsequently, cover second bond course 110 that a material is GaN again on described active layer 108 surfaces, the second type epitaxial layer 112 through overdoping then is covered in described second bond course 110 surfaces, and the described second type GaN epitaxial layer 112 surfaces can be provided with one second type electrode 114, and both conductivity are identical.Wherein, in order to promote conductivity, described substrate 100, bond course 102 and first bond course 106 can be doped to have and first electrode 116, conductivity that the first type GaN epitaxial layer 104 is identical, and second bond course 110 can be doped to and has and first electrode 116, conductivity that the second type GaN epitaxial layer 112 is identical.
Yet aforesaid light-emitting component 10 has following shortcoming:
One, element is made complicated: because sapphire substrate 100 is insulators, can't directly make electrode on its surface, and in order to increase the conductivity of element internal, must be through particular design or technology, ohmic contact (ohmic contact) as etching technique (Etching) back made, to be made into the first type electrode 116 and the second type electrode 114, increase the complexity that element is made.
Two, lattice defect density height: sapphire substrate 100 differs about 13.8% usually with the lattice constant of GaN, lattice do not match it seems suitable big, therefore the interface between sapphire substrate 100 and GaN 102 has quite highdensity line defect (defect) generation, and its difference row (dislocation) density is about 10
8-10
10/ cm
2In case these difference rows extend into active layer, characteristic that will certainly the heavy damage element its luminous efficiency is reduced, and shortens useful life.
Three, epitaxial layer has high resistance: because described sapphire substrate 100 is with six side's closest packing structural arrangement, the follow-up GaN epitaxial layer that all forms six side's closest packing structures, yet stacking of six side's closest packing crystal is quite fine and close, desire increases its P-type conduction by doping way and can have any problem, therefore still need and apply a heat treatment process, to promote its conductivity, maybe need to increase a current spreading layer (current spreadinglayer), for example: Ni/Au, Ni/Pt/Au or Indium Tin Oxide (ITO) make that the electric current of importing via electrode can evenly be distributed.
In order to overcome the problem that sapphire can't conduct electricity, Okumura propose with cubic crystal GaN grow up GaAs { method of making light-emitting component on the 100} face (is seen Journal of Crystal Growth, 164 (1996), pp (149-153), yet, still the lattice constant and thermal coefficient of expansion (the thermal expansion coefficient) difference that have GaN and GaAs are excessive, are about 20%, take place and cause GaN to be easy to generate problem of cracks.
As described in Figure 2, in addition, SiC (for example: 2H-SiC, 4H-SiC, 6H-SiC and 3C-SiC) also once was used as the substrate of light-emitting component in traditional technology at present, to overcome the shortcoming of described insulated substrate, also be about to the both sides that two electrodes directly are located at the SiC substrate respectively, to produce a rectilinear electrode light-emitting component structure; Electrode 210,212 lays respectively at the both sides of SiC substrate 200.In addition, SiC also has high penetration for visible light and ultraviolet light, more can increase the element luminous efficiency.Its major defect is:
With 3C-SiC is substrate, and the lattice of itself and GaN does not match still up to 3.4%, that is still is easy to generate traditional defective.
Summary of the invention
It is the light-emitting component of substrate with carborundum that main purpose of the present invention provides a kind of, and cooperates one to have boron phosphide buffer layer, overcomes the drawback of prior art, reaches to reduce traditional unmatched purpose of lattice.
It is the light-emitting component of substrate with carborundum that second purpose of the present invention provides a kind of, by increasing the conduction surname of substrate, makes electrode can be made in the substrate both sides respectively, is formed into rectilinear structure, reaches the purpose that reduces process complexity.
It is the light-emitting component of substrate with carborundum that the 3rd purpose of the present invention provides a kind of, by having a boron phosphide buffer layer between substrate and epitaxial layer, reaches the purpose that the lattice that reduces both does not match and avoids generation of defects.
The object of the present invention is achieved like this: a kind of is the light-emitting component of substrate with carborundum, and it mainly comprises: a carborundum (SiC) substrate; One boron phosphide (BP) resilient coating is located on the described silicon carbide substrate; One first type gallium nitride (GaN) bond course is located on described boron phosphide (BP) resilient coating; One active layer is located on the described first type gallium nitride bond course; And one second type gallium nitride bond course be located on the described active layer.
The crystal structure of described silicon carbide substrate, boron phosphide buffer layer, the first type gallium nitride bond course, active layer and the second type gallium nitride bond course is all cubic crystal (cubic).Especially, described substrate is preferably 3C-SiC.Described active layer comprises gallium nitride based semiconductor, for example: In
yGaN, wherein 0＜y＜1.
Light-emitting component of the present invention comprises that more one first type electrode and one second electrode, first electrode are to be arranged under the described silicon carbide substrate.The second type electrode is arranged on the described second type bond course in addition.Described boron phosphide buffer layer, the first type gallium nitride bond course all have the conductivity identical with described silicon carbide substrate with the first type electrode.And the described second type gallium nitride bond course all has the conductivity opposite with described silicon carbide substrate with the described second type electrode.
The present invention is characterized in that its substrate is is material with 3C-SiC, and utilize boron phosphide as the resilient coating between substrate and the epitaxial layer.
Further specify below in conjunction with preferred embodiment and accompanying drawing.
Description of drawings
Fig. 1 is the structural profile schematic diagram of conventional luminescent device.
Fig. 2 is the structural profile schematic diagram of another kind of conventional luminescent device.
Fig. 3 is a light emitting element structure generalized section of the present invention.
Embodiment
Consult shown in Figure 3, light-emitting component 30 of the present invention is applicable to the light-emitting component of laser diode (laser diode), light-emitting diode (light emitting diode), rectilinear electrode structure or other similar structures, and its structure comprises a silicon carbide substrate 300, a boron phosphide buffer layer 302, one first type gallium nitride bond course 304, an active layer 306, one second type gallium nitride bond course 308, one first type electrode 312 and one second type electrode 310 in regular turn.
The present invention adopts carborundum as substrate 300, to increase the conductivity of element internal, makes electrode 310 and 312 can be made in the both sides of substrate 300 respectively, forms the rectilinear electrode light-emitting element of simple structure.In addition, silicon carbide substrate 300 is for the penetrance height of visible light and ultraviolet light, but the lift elements luminous efficiency.Silicon carbide substrate 300 comprises 2H-SiC, 4H-SiC, 6H-SiC and 3C-SiC, and wherein the preferably is 3C-SiC, and its main cause can be doping to the P-type conduction layer than piling up of six side's closest packing crystal easily for the stack manner with cubic crystal structure.
Moreover the cubic crystal structure that has quite stable of boron phosphide buffer layer 302 itself can be formed at the C{001} crystal plane surface of silicon carbide substrate 300, is called the upper surface of silicon carbide substrate at this, and the opposite side of silicon carbide substrate then is called lower surface.Silicon carbide substrate 300 can be cleaned with suitable solution chemistry earlier, then at H
2Under the atmosphere, silicon carbide substrate 300 is heated to about 900 ℃, removes the oxide of the upper surface of silicon carbide substrate again, continue and utilize the halide gas phase to build brilliant method (halide vapor phase epitaxy), with H
2As carrying gas (carrier gas), with boron chloride (BCl
3) and phosphorus chloride (PCl
3), or boron chloride (HCl
3) and hydrogen phosphide (PH
3) as predecessor, carrying out low temperature phosphor boron layer crystalline substance of heap of stone up and down prior to 300 ℃ of temperature, its thickness is about 400nm; Afterwards, again temperature is risen approximately to about in the of 1000 ℃, of heap of stone brilliant to carry out high temperature phosphorization boron layer, about 60 minutes of sustained response, its thickness is to be 4560nm.
Described boron phosphide is to be zincblende lattce structure (zinc blende structure), its lattice constant is about 4.538 , and the gallium nitride of boron phosphide layer and zincblende lattce structure, its lattice constant is about 4.51 , its crystal lattice difference is about 0.6%, can make follow-up epitaxial layer have the perfect crystal structure, with lift elements luminous efficiency and useful life.
For more clearly demonstrating the of heap of stone brilliant process of described boron phosphide, below of heap of stone brilliant in a preferred embodiment of silicon carbide substrate for boron phosphide.
At first reaction chamber temperature is increased to about 900-1180 ℃, kept several minutes.Then, it is about about in the of 300 ℃ that reaction chamber temperature is reduced to, and begins to supply PCl again
3(or PH
3) to reative cell inside, after about 3 minutes, carry out the BCl first time again
3Supplied about 40 minutes.Then, stop BCl earlier
3Supply keeps a period of time up and down in uniform temp (about 300 ℃), for example: 5 minutes, again the temperature of reative cell is increased to about about in the of 1000 ℃, during continue to keep PCl
3(or PH
3) supply.Then, carry out the BCl second time up and down again for about 1000 ℃ in temperature
3Supplied about 60 minutes, during continue to keep PCl
3(or PH
3) supply.Then, first stop supplies PCl
3(or PH
3) and BCl
3, continue for some time about in the of 1000 ℃ in temperature is about again, for example: about 10 minutes.Afterwards, just finish the formation of BP resilient coating, take out after then reaction chamber temperature can being reduced to room temperature this moment.In the forming process of described BP resilient coating, continue supply H all the time
2Gas is to reative cell inside.
Moreover the described first type gallium nitride bond course 304 has cubic crystal structure, and visual demand and increase other element and form forms Al
xIn
1-xGa
yN
1-y(0＜x＜1,0＜y＜1=or Al
xGa
1-xN
yP
1-y(0＜x＜1,0＜y＜1=, for example gallium nitride (GaN), InGaN (InGaN), aluminium gallium nitride alloy (AlGaN) or phosphorous nitride gallium (GaNP), and the predecessor that forms described epitaxial layer is generally methyl diamine system or ammonia (NH
3).
With gallium nitride (GaN) is example, and its predecessor can comprise monomethyl diamine (monomethyl hydrazine; MMH) with trimethyl gallium (trimethyl gallium; TMG), by organic metal gas phase brilliant method (metalorganic vapor phase epitaxy of heap of stone; MOVPE), form the first type gallium nitride bond course 304 on described boron phosphide buffer layer 302 surfaces.Wherein, the crystal method of heap of stone of gallium nitride bond course 304 can be as described below.
At first, supply H
2With N
2Gas, its temperature is about under 350-500 ℃, begins to supply MMH.Continue for some time, for example: after 3 minutes, begin to carry out the TMG supply first time, the time is about 20 minutes.Then, stop the TMG supply, through after a while, for example: 5 minutes, reaction chamber temperature is increased to temperature (about 800 ℃) up and down.Keep the MMH supply during this time.Then, carry out the TMG supply second time up and down in uniform temp (about 800 ℃), the time is about 60 minutes.Should continue to keep the MMH supply during this time.At last, can stop the supply of MMH and TMG earlier, keep a period of time more up and down in uniform temp (about 800 ℃), for example: 30 minutes.Afterwards, cool the temperature to room temperature, it is of heap of stone brilliant so just to finish GaN.In addition, during the GaN crystalline substance of heap of stone, should continue to supply H
2And N
2Gas.
Moreover described active layer 306 has cubic crystal structure, be located on the described first type gallium nitride bond course 304, and can be that semiconductor is constituted by gallium nitride, In for example
yGaN, 0＜y＜1, and utilize the MOVCVD method, in addition with trimethyl indium (trimethyl indium; TMIn), trimethyl gallium (trimethyl gallium; TMG) and NH
2For predecessor forms.When described y equaled 0.1, prepared element then can send the ultraviolet light of the about 405nm of wavelength; When described y equaled 0.2, prepared element then can send the blue light of the about 470nm of wavelength.
In addition, the described second type gallium nitride bond course 308, same tool cubic crystal structure is located on the described active layer 306, and its formation method is identical with the aforementioned first type gallium nitride bond course, 304 formation methods.So do not repeat.
The described first type electrode 312 is arranged at the lower surface of silicon carbide substrate 300, and the second type electrode 310 is arranged at the second type gallium nitride bond course, 308 surfaces.
In order to increase the conductivity of light-emitting component 30 inside, make electric current evenly to disperse, the first type gallium nitride bond course 304 can be via mixing to reduce resistance and to increase conductivity, for example: doped with II A family element (for example: Mg), make these materials form P-type conduction, or doping VIA family element (for example: Si), make these materials form n type conduction, boron phosphide buffer layer 302 then can be via control many phosphorus structure (P-Rich) or many boron structure (B-Rich) and form p type conduction or n type conduction.
Should be noted that: described silicon carbide substrate 300, boron phosphide buffer layer 302 and the first type gallium nitride bond course 304 all must have identical conductivity with the first type electrode 312.
Certainly, the second type gallium nitride bond course 308 also can be via doping, and to increase conductivity, for example: doped with II A family element (for example: Mg), make it form D type conduction, or doping VIA family element (for example: Si), make it form n type conduction.And the second type gallium nitride bond course 308 must have identical conductivity with the first type electrode 310.The conductivity of silicon carbide substrate 300, boron phosphide buffer layer 302, the first type gallium nitride bond course 306 and the first type electrode, 312 these materials and the second type gallium nitride bond course 308, the second type electrode 310 are opposite.
The preferably, the first type electrode 312 is a n type conductivity, so silicon carbide substrate 300, boron phosphide buffer layer 302, the first type gallium nitride bond course 306 is all n type conductivity, is p type conductivity as for the second type electrode 310,308 of the second gallium nitride bond courses are p type conductivity.
Major advantage of the present invention:
1, conductivity SiC substrate used in the present invention not only can omit tradition in order to increase the activation step of P-type conduction epitaxial layer, also makes electrode form rectilinear structure.Therefore, reduce process complexity widely.
2, boron phosphide buffer layer of the present invention, not only can omit tradition in order to increase the activation step of P-type conduction epitaxial layer, and the lattice that can reduce between substrate and the epitaxial layer does not match, the feasible problem that can effectively avoid defective to produce, and the perfect epitaxial layer of formation crystal structure, and then lift elements luminous efficiency and useful life.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limiting scope of the present invention, anyly has the knack of this skill person, and without departing from the spirit and scope of the present invention, various changes and the retouching done all belongs within protection scope of the present invention.
Claims (10)
1, a kind of is the light-emitting component of substrate with carborundum, it is characterized in that: it comprises the silicon carbide substrate with cubic crystal structure; Boron phosphide buffer layer is located on the described silicon carbide substrate, and has cubic crystal structure; The first type gallium nitride bond course is located at described boron phosphide buffer layer surface, and has cubic crystal structure; Active layer is located at the described first type gallium nitride bond course surface, and has cubic crystal structure; The second type gallium nitride bond course is located at described active layer surface, and has cubic crystal structure; The first type electrode is arranged under the described silicon carbide substrate; The second type electrode is arranged on the described second type bond course; This carborundum is the 3C-SiC structure.
2, according to claim 1 is the light-emitting component of substrate with carborundum, it is characterized in that: described active layer comprises gallium nitride based semiconductor.
3, according to claim 1 is the light-emitting component of substrate with carborundum, it is characterized in that: described active layer is to plug with molten metal institute by gallium nitride to constitute.
4, according to claim 1 is the light-emitting component of substrate with carborundum, it is characterized in that: described silicon carbide substrate has identical conductivity with described boron phosphide buffer layer.
5, according to claim 1 is the light-emitting component of substrate with carborundum, it is characterized in that: the described first type gallium nitride bond course has identical conductivity with silicon carbide substrate.
6, according to claim 1 is the light-emitting component of substrate with carborundum, it is characterized in that: the described second type gallium nitride bond course has opposite conductivity with silicon carbide substrate.
7, according to claim 1 is the light-emitting component of substrate with carborundum, it is characterized in that: the described first type electrode has identical conductivity with described silicon carbide substrate.
8, according to claim 1 is the light-emitting component of substrate with carborundum, it is characterized in that: the described second type electrode has opposite conductivity with described silicon carbide substrate.
9, according to claim 1 is the light-emitting component of substrate with carborundum, it is characterized in that: described boron phosphide buffer layer is via control many phosphorus structure or many boron structure, and the p type that forms conducts electricity or n type conduction.
10, according to claim 1 is the light-emitting component of substrate with carborundum, it is characterized in that: the described first type gallium nitride bond course is via doping, to reduce its resistance and to increase its conductivity.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021492867A CN1501518A (en) | 2002-11-12 | 2002-11-12 | Light-emitting component with silicon carbide as substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021492867A CN1501518A (en) | 2002-11-12 | 2002-11-12 | Light-emitting component with silicon carbide as substrate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100435360C (en) * | 2004-12-27 | 2008-11-19 | 北京大学 | Method for preparing LED chip with 2D natural scattered faces for outputting light |
| CN102064256A (en) * | 2010-12-15 | 2011-05-18 | 韩吉胜 | GaN blue light LED device using 3C-SiC-Si as substrate |
| CN101286487B (en) * | 2007-04-13 | 2012-08-08 | 日本冲信息株式会社 | Semiconductor device, led head and image forming apparatus |
-
2002
- 2002-11-12 CN CNA021492867A patent/CN1501518A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100435360C (en) * | 2004-12-27 | 2008-11-19 | 北京大学 | Method for preparing LED chip with 2D natural scattered faces for outputting light |
| CN101286487B (en) * | 2007-04-13 | 2012-08-08 | 日本冲信息株式会社 | Semiconductor device, led head and image forming apparatus |
| CN102064256A (en) * | 2010-12-15 | 2011-05-18 | 韩吉胜 | GaN blue light LED device using 3C-SiC-Si as substrate |
| CN102064256B (en) * | 2010-12-15 | 2013-08-14 | 韩吉胜 | GaN blue light LED device using 3C-SiC-Si as substrate |
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