CN217641378U - Silicon-based light-emitting diode - Google Patents
Silicon-based light-emitting diode Download PDFInfo
- Publication number
- CN217641378U CN217641378U CN202221794507.5U CN202221794507U CN217641378U CN 217641378 U CN217641378 U CN 217641378U CN 202221794507 U CN202221794507 U CN 202221794507U CN 217641378 U CN217641378 U CN 217641378U
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon
- light emitting
- emitting diode
- aln
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The utility model provides a silicon-based light emitting diode relates to semiconductor photoelectric technology field, including the silicon substrate, this silicon-based light emitting diode still includes: the semiconductor device comprises a buffer layer, an N-type semiconductor layer, a light emitting layer, an electron blocking layer, a P-type semiconductor layer and a contact layer which are sequentially stacked on a silicon substrate; the buffer layer sequentially comprises a graphene layer, a first AlN layer, a SiN layer and a second AlN layer, the graphene layer is arranged on the silicon substrate, the first AlN layer grows at a low temperature, and the second AlN layer grows at a high temperature. The utility model discloses can solve and have great lattice mismatch and thermal mismatch between silicon substrate and the gallium nitride epitaxial layer among the prior art, cause the gallium nitride epitaxial layer to produce a large amount of defects and dislocation's technical problem.
Description
Technical Field
The utility model relates to a semiconductor photoelectric technology field, concretely relates to silica-based light emitting diode.
Background
With the continuous development of the semiconductor industry, the light emitting diode is used as a novel illumination light source, has the obvious advantages of long service life, energy conservation, environmental protection, safety and the like, and is rapidly developed in the fields of illumination and display. Light emitting diodes, i.e. LEDs, emit light by energy released by recombination of electrons and holes. The light emitting diode generally adopts a group iii nitride semiconductor material, and as a representative of the group iii nitride material, gallium nitride (GaN) is a leading edge and a hot spot of research in the field of light emitting diodes due to its excellent electronic and optical properties, so that the application of the GaN material in the light emitting diode is particularly important.
At present, common gallium nitride generally grows on a substrate, the substrate is made of silicon, sapphire and silicon carbide materials, but the sapphire substrate and the silicon carbide substrate are high in cost and difficult to realize large-size growth, the silicon substrate is low in cost and easy to integrate and produce in large size, the silicon substrate is generally selected as the substrate of the light emitting diode to form the silicon-based light emitting diode, but the silicon substrate and a gallium nitride epitaxial layer have the problems of large lattice mismatch and thermal mismatch, the lattice mismatch and the thermal mismatch can cause a large number of defects and dislocations in the gallium nitride epitaxial layer, the poor crystal quality of the gallium nitride epitaxial layer is caused, even cracks are caused, and the yield and the reliability of the silicon-based light emitting diode are directly influenced.
Therefore, the existing silicon-based light emitting diode generally has the technical problem that a large amount of defects and dislocations are generated on the gallium nitride epitaxial layer due to large lattice mismatch and thermal mismatch between the silicon substrate and the gallium nitride epitaxial layer.
SUMMERY OF THE UTILITY MODEL
The utility model is not enough to prior art, the utility model aims to provide a silica-based emitting diode aims at solving and has great lattice mismatch and thermal mismatch between silicon substrate and the gallium nitride epitaxial layer among the prior art, causes the gallium nitride epitaxial layer to produce a large amount of defects and dislocation's technical problem.
The utility model provides a silicon-based light emitting diode, including the silicon substrate, silicon-based light emitting diode still includes:
the buffer layer, the N-type semiconductor layer, the light emitting layer, the electron blocking layer, the P-type semiconductor layer and the contact layer are sequentially stacked on the silicon substrate;
the buffer layer comprises a graphene layer, a first AlN layer, an SiN layer and a second AlN layer which are sequentially stacked, the graphene layer is arranged on the silicon substrate, the first AlN layer grows at a low temperature, and the second AlN layer grows at a high temperature.
Compared with the prior art, the beneficial effects of the utility model reside in that: add the buffer layer between silicon substrate and N type semiconductor layer, do benefit to the growth of N type semiconductor layer, improve the crystal quality of N type semiconductor layer, specifically, the buffer layer is including the graphite alkene layer that stacks gradually the setting, first AlN layer, siN layer and second AlN layer, the good heat-conduction ability of graphite alkene layer can improve silica-based emitting diode's heat-sinking capability, alleviate its heat collection in the course of the work, increase silica-based emitting diode's reliability, the structure of graphite alkene layer is similar with the structure of gallium nitride material simultaneously, can improve the epitaxial quality of N type semiconductor layer effectively. The first AlN layer forms a three-dimensional nucleating layer due to low-temperature growth, a high-density nucleating center is provided, the free energy between the silicon substrate and the first AlN layer is reduced, the crystallization quality of the buffer layer is established, and the stress release of the subsequent N-type semiconductor layer is facilitated. The SiN layer can fill the blank position of dislocation due to the small atomic diameter of Si atoms, and can fill up dislocation lines extending upwards, so that the crystal quality of a subsequent epitaxial layer is improved. The second AlN layer may accelerate the merging between islands formed by the three-dimensional nucleation layer of the first AlN layer, forming a high-quality buffer layer. At the graphite alkene layer, first AlN layer, under the combined action on SiN layer and second AlN layer, improve the crystal quality of buffer layer, with the crystal quality that improves follow-up N type semiconductor layer, reduce the appearance of crackle, thereby improve silica-based emitting diode's yields and reliability, avoid lattice mismatch and thermal mismatch can cause a large amount of defects and dislocation in the gallium nitride epitaxial layer, the crystal quality that arouses the gallium nitride epitaxial layer is poor even produces the crackle, influence silica-based emitting diode's yields and reliability, thereby solved and had great lattice mismatch and thermal mismatch between silicon substrate and the gallium nitride epitaxial layer among the prior art, cause the gallium nitride epitaxial layer to produce a large amount of defects and dislocation's technical problem.
Further, the thickness of the graphene layer is 1-6nm.
Further, the thickness of the first AlN layer is 10 to 20nm.
Further, the second AlN layer has a thickness of 40-60nm.
Further, the thickness of the SiN layer is 2-8nm.
Furthermore, the N-type semiconductor layer is an N-type doped GaN thin film layer, and the thickness of the N-type doped GaN thin film layer is 2-3 mu m.
Further, the light emitting layer is of a multi-quantum well structure and comprises InGaN well layers and AlGaN barrier layers with a plurality of periods, wherein the thickness of the InGaN well layer is 3-3.7nm, and the thickness of the AlGaN barrier layer is 9-12nm.
Furthermore, the electron blocking layer is an AlInGaN thin film layer, and the thickness of the electron blocking layer is 30-50nm.
Furthermore, the P-type semiconductor layer is a P-type doped GaN thin film layer, and the thickness of the P-type doped GaN thin film layer is 15-30nm.
Furthermore, the contact layer is a P-type doped GaN thin film layer, and the thickness of the contact layer is 1-6nm.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of a silicon-based light emitting diode according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a buffer layer in an embodiment of the present invention;
the figure elements are illustrated in symbols:
the light emitting diode comprises a silicon substrate 100, a buffer layer 200, a graphene layer 210, a first AlN layer 220, a SiN layer 230, a second AlN layer 240, an N-type semiconductor layer 300, a light emitting layer 400, an electron blocking layer 500, a P-type semiconductor layer 600 and a contact layer 700.
Detailed Description
In order to facilitate understanding of the present invention, the present invention will be described more fully hereinafter with reference to the accompanying drawings. Several embodiments of the invention are presented in the drawings. The invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1-2, a silicon-based light emitting diode according to an embodiment of the present invention includes a silicon substrate 100, wherein the substrate is a substrate on which an epitaxial layer grows, and is a main factor for determining performance indexes such as color, brightness, and lifetime of the light emitting diode, and the substrate material commonly used in the silicon-based light emitting diode includes sapphire (Al) 2 O 3 ) Silicon (Si) and silicon carbide (SiC), but sapphire substrate and silicon carbide substrate 100 are expensive and cannot be usedLarge-scale growth is easy to realize, and the silicon substrate 100 is low in cost, easy to integrate and produce in large scale, and the silicon substrate 100 is generally selected as the substrate of the silicon-based light emitting diode. In the present embodiment, the substrate is a silicon substrate 100, which has the advantages of high crystal quality, large size, low cost, easy processing, good electrical conductivity, good thermal stability, and the like, and is widely used in the field of silicon-based light emitting diodes.
In addition, a surface pretreatment of the silicon substrate 100 is generally required to remove impurities, such as water and oxygen, adsorbed on the surface of the silicon substrate 100 in order to prevent oxidation or surface contamination of the surface of the silicon substrate 100. Specifically, the silicon substrate 100 was placed in a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, the temperature was set to 1000 to 1150 ℃, and hydrogen (H) gas was introduced 2 ) Ammonia (NH) 3 ) The silicon substrate 100 is processed at a high temperature for 4-15min. The Metal-organic Chemical Vapor Deposition (MOCVD) is a method of Vapor phase epitaxial growth on a substrate by thermal decomposition reaction using an organic compound of a group iii or group ii element and a hydride of a group V or group vi element as a crystal growth source material.
The buffer layer 200, the N-type semiconductor layer 300, the light emitting layer 400, the electron blocking layer 500, the P-type semiconductor layer 600 and the contact layer 700 are sequentially stacked on the silicon substrate 100, wherein the buffer layer 200 comprises a graphene layer 210, a first AlN layer 220, an SiN layer 230 and a second AlN layer 240 which are sequentially stacked, the graphene layer 210 is arranged on the silicon substrate 100, the graphene material has a high heat conduction coefficient, the heat conduction coefficient can reach 5300W/mK at room temperature, the heat conduction between the N-type semiconductor layer 300 and the silicon substrate 100 can be obviously improved, on the one hand, the heat conduction capability of the graphene layer 210 can improve the heat dissipation capability of the silicon-based light emitting diode, the heat collection of the silicon-based light emitting diode in the working process can be relieved, and the reliability of the silicon-based light emitting diode is improved. On the other hand, the graphene layer 210 is a novel two-dimensional nanomaterial, the arrangement of atoms is similar to that of gallium nitride materials, atoms in the graphene layer 210 form a hexagonal structure through sp2 hybridization, the performance is stable, the structure is similar to that of the gallium nitride materials, and the epitaxial quality of the N-type semiconductor layer 300 can be effectively improved. The graphene layer 210 is a graphene thin film layer grown by a vapor deposition method (PECVD) to a thickness of 1 to 6nm.
The first AlN layer 220 is arranged on the graphene layer 210, the first AlN layer 220 is an AlN thin film layer grown at a low temperature, the growth temperature is 970-1015 ℃, the thickness is 10-20nm, and the first AlN layer 220 forms a three-dimensional nucleation layer due to the low-temperature growth thereof, so that a high-density nucleation center is provided, the free energy between the silicon substrate 100 and the first AlN layer 220 is reduced, the crystallization quality of the buffer layer 200 is established, and the stress release of the subsequent N-type semiconductor layer 300 is facilitated.
Specifically, setting the temperature at 970-1015 ℃, adjusting the pressure to 40-75Torr, taking TMAl as an Al source and NH in a hydrogen environment 3 As N source, NH 3 With a flow rate of 3000-4500sccm, a first AlN layer 220 with a thickness of 10-20nm is epitaxially grown on the graphene layer 210.
The SiN layer 230 is arranged on the first AlN layer 220, the thickness of the SiN layer 230 is 2-8nm, and the SiN layer 230 will block dislocations from extending upward, that is, because the atomic diameter of Si atoms is small, the blank positions of dislocations can be filled, and dislocation lines extending upward can be filled, so that the crystal quality of subsequent epitaxial layers is improved.
Specifically, the temperature is set to 1000-1200 ℃, the pressure is adjusted to 40-60Torr, and SiH is added in the atmosphere of hydrogen 4 As Si source, NH 3 As N source, NH 3 At a flow rate of 3000-4500sccm, and epitaxially growing a SiN layer 230 with a thickness of 2-8nm on the first AlN layer 220.
The SiN layer 230 is provided with a second AlN layer 240, and the second AlN layer 240 is an AlN thin film layer grown at a high temperature, the growth temperature of which is 1070-1110 ℃ and the thickness of which is 40-60nm, so that the merging of islands formed by the three-dimensional nucleation layer of the first AlN layer 220 is accelerated, and the high-quality buffer layer 200 is formed. Lattice mismatch and thermal mismatch between the N-type semiconductor layer 300 and the silicon substrate 100 are further reduced, thereby reducing the generation of dislocation and the generation of cracks.
Specifically, the temperature is set to 1070-1110 ℃, the pressure is adjusted to 50-80Torr, TMAl is used as an Al source, and NH is used in a hydrogen environment 3 As N source, NH 3 At a flow rate of 2200 to 3400sccm, and epitaxially growing a second AlN layer 240 with a thickness of 40 to 60nm on the SiN layer 230.
It should be noted that, in the buffer layer 200 in this embodiment, the buffer layer 200 sequentially includes the graphene layer 210, the first AlN layer 220, the SiN layer 230, and the second AlN layer 240, and the good heat conduction capability of the graphene layer 210 can improve the heat dissipation capability of the silicon-based light emitting diode, alleviate the heat aggregation of the silicon-based light emitting diode during the working process, and increase the reliability of the silicon-based light emitting diode, and meanwhile, the structure of the graphene layer 210 is similar to that of a gallium nitride material, which can effectively improve the epitaxial quality of the N-type semiconductor layer 300. The first AlN layer 220 forms a three-dimensional nucleation layer due to its low-temperature growth, provides a high-density nucleation center, reduces the free energy between the silicon substrate 100 and the first AlN layer 220, establishes the crystallization quality of the buffer layer 200, and facilitates the stress release of the subsequent N-type semiconductor layer 300. The SiN layer 230 can fill in the blank position of dislocation due to the small atomic diameter of Si atoms, and can fill in the dislocation line extending upward, thereby improving the crystal quality of the subsequent epitaxial layer. The second AlN layer 240 accelerates the merging between islands formed by the three-dimensional nucleation layer of the first AlN layer 220, forming a high-quality buffer layer 200. Lattice mismatch and thermal mismatch between the N-type semiconductor layer 300 and the silicon substrate 100 are further reduced, thereby reducing the generation of dislocation and the generation of cracks. Under the combined action of the graphene layer 210, the first AlN layer 220, the SiN layer 230 and the second AlN layer 240, the crystal quality of the subsequent N-type semiconductor layer 300 is improved, and the occurrence of cracks is reduced, so that the yield and the reliability of the silicon-based light emitting diode are improved, and a large number of defects and dislocations caused by lattice mismatch and thermal mismatch in a gallium nitride epitaxial layer are avoided, the crystal quality of the gallium nitride epitaxial layer is poor, even cracks are generated, and the yield and the reliability of the silicon-based light emitting diode are affected.
In addition, an N-type semiconductor layer 300 is disposed on the buffer layer 200, and is an N-type doped GaN thin film layer with a thickness of 2-3 μm, wherein the dopant of the N-type semiconductor layer 300 is Si and the doping concentration is 1 × 10 18 cm -3 -2×10 18 cm -3 The growth temperature is 1000-1200 deg.C. The N-type semiconductor layer 300 provides electrons to the light emitting layer 400 to realize electron and hole injectionThe light-emitting layer 400 is radiatively recombined to achieve light emission of the silicon-based led.
The N-type semiconductor layer 300 is provided with the light emitting layer 400, the light emitting layer 400 receives electrons provided by the N-type semiconductor and holes provided by the P-type semiconductor layer 600, and radiative recombination of the electrons and the holes is realized in the multiple quantum wells of the light emitting layer 400 to emit light. The light emitting layer 400 is of a multi-quantum well structure, and the light emitting layer 400 comprises an InGaN well layer and an AlGaN barrier layer with 6-15 periods, wherein the thickness of the InGaN well layer is 3-3.7nm, the growth temperature of the InGaN well layer is 780-920 ℃, and the growth pressure of the InGaN well layer is 200-250Torr; the AlGaN barrier layer has a thickness of 9-12nm, the Al component ratio of 0.01-0.2, a growth temperature of 850-900 ℃ and a growth pressure of 200-250Torr.
The light-emitting layer 400 is provided with an electron blocking layer 500 for blocking electrons of the N-type semiconductor layer 300 from migrating into the P-type semiconductor layer 600, blocking the electrons into the light-emitting layer 400, and enhancing the radiative recombination efficiency of the electrons and the holes in the light-emitting layer 400. The electron blocking layer 500 is an AlInGaN thin film layer, the thickness is 30-50nm, and because the electron migration rate is greater than the hole migration rate, the electron blocking layer 500 effectively blocks electrons of the N-type semiconductor layer 300 from migrating into the P-type semiconductor layer 600, and non-radiative recombination of electrons and holes in the P-type semiconductor layer 600 is reduced, so that radiative recombination in multiple quantum wells of the light emitting layer 400 is improved, and the light emitting efficiency of the silicon-based light emitting diode is improved. Specifically, the electron blocking layer 500 is epitaxially grown on the light emitting layer 400 to a thickness of 30 to 50nm at a temperature of 900 to 1000 ℃ and a pressure of 100 to 200 Torr.
The P-type semiconductor layer 600 is disposed on the electron blocking layer 500, and the P-type semiconductor layer 600 provides holes to the light emitting layer 400, so that the electrons and the holes are radiatively combined in the light emitting layer 400, and the silicon-based light emitting diode can emit light. The P-type semiconductor layer 600 is a P-type doped GaN thin film layer with the thickness of 15-30nm, wherein the dopant of the P-type semiconductor layer 600 is Mg, and specifically, the P-type semiconductor layer 600 with the thickness of 15-30nm is epitaxially grown on the electron blocking layer 500 at the temperature of 900-1000 ℃ and the pressure of 200-300 Torr.
In addition, a contact layer 700 is provided on the P-type semiconductor layer 600 for forming ohmic contact with the electrode to effectively reduce voltage and improve brightness, the contact layer 700 is a P-type doped GaN thin film layer with a thickness of 1-6nm, a dopant thereof is Mg, and a growth temperature is 800-950 ℃.
Compared with the prior art, the silicon-based light emitting diode provided by the embodiment has the beneficial effects that: through the utility model provides a silicon-based light emitting diode, add the buffer layer between silicon substrate and N type semiconductor layer, do benefit to the growth of N type semiconductor layer, improve the crystal quality of N type semiconductor layer, specifically do, the buffer layer is including the graphite alkene layer of range upon range of setting, first AlN layer, siN layer and second AlN layer, the good heat-transfer ability of graphite alkene layer can improve silicon-based light emitting diode's heat-sinking capability, alleviate its heat collection in the course of the work, increase silicon-based light emitting diode's reliability, graphite alkene layer's structure is similar with the structure of gallium nitride material simultaneously, can improve the epitaxial quality of N type semiconductor layer effectively. The first AlN layer forms a three-dimensional nucleating layer due to low-temperature growth, a high-density nucleating center is provided, the free energy between the silicon substrate and the first AlN layer is reduced, the crystallization quality of the buffer layer is established, and the stress release of the subsequent N-type semiconductor layer is facilitated. The SiN layer can fill the blank position of dislocation due to the small atomic diameter of Si atoms, and can fill up dislocation lines extending upwards, so that the crystal quality of a subsequent epitaxial layer is improved. The second AlN layer may accelerate the merging between islands formed by the three-dimensional nucleation layer of the first AlN layer, forming a high-quality buffer layer. At the graphite alkene layer, first AlN layer, under the combined action on SiN layer and second AlN layer, improve the crystal quality of buffer layer, with the crystal quality that improves follow-up N type semiconductor layer, reduce the appearance of crackle, thereby improve silicon-based emitting diode's yields and reliability, avoid lattice mismatch and thermal mismatch to cause a large amount of defects and dislocation in the gallium nitride epitaxial layer, the crystal quality that arouses the gallium nitride epitaxial layer is poor even produces the crackle, influence silicon-based emitting diode's yields and reliability, thereby solved and had great lattice mismatch and thermal mismatch between silicon substrate and the gallium nitride epitaxial layer among the prior art, cause the gallium nitride epitaxial layer to produce a large amount of defects and dislocation's technical problem.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. A silicon-based light emitting diode comprising a silicon substrate, wherein the silicon light emitting diode further comprises:
the buffer layer, the N-type semiconductor layer, the light emitting layer, the electron blocking layer, the P-type semiconductor layer and the contact layer are sequentially laminated on the silicon substrate;
the buffer layer comprises a graphene layer, a first AlN layer, an SiN layer and a second AlN layer which are sequentially stacked, the graphene layer is arranged on the silicon substrate, the first AlN layer grows at a low temperature, and the second AlN layer grows at a high temperature.
2. The silicon-based light emitting diode of claim 1, wherein the graphene layer has a thickness of 1-6nm.
3. The silicon-based led of claim 1, wherein the first AlN layer has a thickness of 10-20nm.
4. The silicon-based led of claim 1, wherein the second AlN layer has a thickness of 40-60nm.
5. The silicon-based light emitting diode of claim 1, wherein the SiN layer has a thickness of 2-8nm.
6. The silicon-based LED of claim 1, wherein the N-type semiconductor layer is an N-type doped GaN thin film layer with a thickness of 2-3 μm.
7. The silicon-based light emitting diode of claim 1, wherein the light emitting layer is a multiple quantum well structure comprising several periods of InGaN well layers and AlGaN barrier layers, wherein the thickness of the InGaN well layers is 3-3.7nm and the thickness of the AlGaN barrier layers is 9-12nm.
8. The silicon-based LED of claim 1, wherein the electron blocking layer is an AlInGaN thin film layer having a thickness of 30-50nm.
9. The silicon-based LED of claim 1, wherein the P-type semiconductor layer is a P-type GaN-doped thin film layer with a thickness of 15-30nm.
10. The silicon-based LED of claim 1, wherein the contact layer is a P-type GaN-doped thin film layer with a thickness of 1-6nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221794507.5U CN217641378U (en) | 2022-07-13 | 2022-07-13 | Silicon-based light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221794507.5U CN217641378U (en) | 2022-07-13 | 2022-07-13 | Silicon-based light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217641378U true CN217641378U (en) | 2022-10-21 |
Family
ID=83635646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221794507.5U Active CN217641378U (en) | 2022-07-13 | 2022-07-13 | Silicon-based light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217641378U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115810697A (en) * | 2023-02-10 | 2023-03-17 | 江西兆驰半导体有限公司 | Silicon-based ultraviolet LED epitaxial structure, preparation method thereof and ultraviolet LED |
| CN115832135A (en) * | 2023-02-14 | 2023-03-21 | 江西兆驰半导体有限公司 | Silicon-based light emitting diode epitaxial wafer, preparation method thereof and light emitting diode |
| CN116759505A (en) * | 2023-08-23 | 2023-09-15 | 江西兆驰半导体有限公司 | LED epitaxial wafer based on silicon substrate, preparation method of LED epitaxial wafer and LED |
-
2022
- 2022-07-13 CN CN202221794507.5U patent/CN217641378U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115810697A (en) * | 2023-02-10 | 2023-03-17 | 江西兆驰半导体有限公司 | Silicon-based ultraviolet LED epitaxial structure, preparation method thereof and ultraviolet LED |
| CN115832135A (en) * | 2023-02-14 | 2023-03-21 | 江西兆驰半导体有限公司 | Silicon-based light emitting diode epitaxial wafer, preparation method thereof and light emitting diode |
| CN116759505A (en) * | 2023-08-23 | 2023-09-15 | 江西兆驰半导体有限公司 | LED epitaxial wafer based on silicon substrate, preparation method of LED epitaxial wafer and LED |
| CN116759505B (en) * | 2023-08-23 | 2023-11-17 | 江西兆驰半导体有限公司 | LED epitaxial wafer based on silicon substrate, preparation method of LED epitaxial wafer and LED |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN217641378U (en) | Silicon-based light-emitting diode | |
| CN106328771B (en) | A method of the extension flawless high-crystal quality LED epitaxial layers in nitride metal gallium compound substrate | |
| CN106229390B (en) | A kind of growing method of GaN base light emitting chip | |
| CN114695612B (en) | Gallium nitride-based light emitting diode epitaxial structure and preparation method thereof | |
| CN217239488U (en) | Gallium nitride-based light-emitting diode | |
| CN108336198A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN114883460A (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN114574959B (en) | Nitride epitaxial layer preparation method and semiconductor epitaxial wafer thereof | |
| CN111725371B (en) | LED epitaxial bottom layer structure and growth method thereof | |
| CN115295693A (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN114566576A (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN104465916B (en) | Gallium nitride light-emitting diode epitaxial wafer | |
| CN116565097A (en) | Light-emitting diode epitaxial wafer and preparation method thereof | |
| CN218827204U (en) | Gallium nitride-based light-emitting diode | |
| CN213816181U (en) | GaN film of Si substrate | |
| KR20120029256A (en) | Semiconductor light emitting device and a method for fabricating the same | |
| CN214378484U (en) | GaN-based epitaxial wafer structure | |
| CN108598222A (en) | A kind of LED epitaxial slice and its growing method | |
| CN113964003A (en) | GaN photocathode with nanotube structure and preparation method thereof | |
| TW201419574A (en) | Semiconductor device, method for making the same and substrate for a light emitting diode | |
| TW201347222A (en) | Semiconductor device and method for making the same | |
| CN112563380A (en) | AlGaN-based deep ultraviolet LED epitaxial wafer with Si substrate and preparation method thereof | |
| CN116230824B (en) | High-light-efficiency light-emitting diode epitaxial wafer, preparation method thereof and LED chip | |
| CN110061104A (en) | The manufacturing method of gallium nitride based LED epitaxial slice | |
| CN218182240U (en) | High-power LED |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |