CN1790755A - Method of manufacturing light-emitting device - Google Patents
Method of manufacturing light-emitting device Download PDFInfo
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- CN1790755A CN1790755A CNA2004100988629A CN200410098862A CN1790755A CN 1790755 A CN1790755 A CN 1790755A CN A2004100988629 A CNA2004100988629 A CN A2004100988629A CN 200410098862 A CN200410098862 A CN 200410098862A CN 1790755 A CN1790755 A CN 1790755A
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- emitting device
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- 238000004519 manufacturing process Methods 0.000 title abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 102
- 238000000034 method Methods 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000010410 layer Substances 0.000 claims description 99
- 239000011247 coating layer Substances 0.000 claims description 42
- 238000004020 luminiscence type Methods 0.000 claims description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 26
- 229910002601 GaN Inorganic materials 0.000 claims description 17
- 239000010980 sapphire Substances 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 125000006850 spacer group Chemical group 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 239000004575 stone Substances 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- -1 magnesium nitride Chemical class 0.000 description 3
- 241000251468 Actinopterygii Species 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
The invention discloses a method to manufacture light device, which comprises steps as follows: (1) providing a first light element with porous intermediate layer constructed by GaN series material; (2) joining a joint base plate to side surface opposite to base material of light unit of said first light element; (3) breaking the said intermediate layer to peel off the substrate and form a second light element with a peeled surface; (4) connecting a first and second electrodes to the second light element to form a light device. This invention reduces cost and increases product-to-standard ratio.
Description
Technical field
The present invention is a kind of method that is used to make light-emitting device, particularly relates to a kind of method of utilizing lift-off technology (lift off) to make light-emitting device.
Background technology
The known present made light-emitting diode of (gallium nitride-based) material based on gallium nitride, generally having light and take out the not good problem of efficient (light extraction efficiency), is lattice constant carborundum (SiC) or the sapphire (α-Al close with the nitrogenize series material because be used to the substrate of gallium nitride growth series material usually
2O
3) substrate, but, because the SiC substrate has the character of extinction, so can absorb the light that luminescent layer shoots to orientation substrate, and sapphire substrate because of refraction coefficient less than the nitrogenize series material but greater than air, and easily produce total reflection effect, so can cause light to penetrate smoothly equally, therefore the two or its analog generally can't obtain required light and take out efficient as the light-emitting device of baseplate material with this.
Consult Fig. 1, known industry is taken out efficient for the light that increases based on the made light-emitting diode of the material of gallium nitride, preparation one earlier comprises one and for example is the light-emitting component 1 of base material 11, a resilient coating 12 and a luminescence unit 13 of conduction (heat) SiC substrate on making, this luminescence unit 13 comprises n type coating layer 131 (n-cladding layer), a luminescent layer 132 (active light-emitting layer) that joins with this resilient coating 12 in regular turn, and a p type coating layer 133 (p-cladding layer).Then, can on the p of this luminescence unit 13 type coating layer 133, form a reflector 14, such as silver metal layer, see through the bonded substrate 16 of an adhesion coating 15 afterwards again with a conduction, for example the Si substrate is engaged on this adhesion coating, can use laser lift-off technology (lift off) 17 to destroy these resilient coatings 12 then in position shown in Figure 1, and base material 11 is peeled off, as shown in Figure 2 respectively at forming a p type Ohmic electrode 181 and n type Ohmic electrode 182 on this bonded substrate 16 and this n type coating layer 131, can prepare the light-emitting diode 100 of a tool metallic reflector 14 at last.
The mode of above-mentioned preparation LED has the advantage of reusable substrate, as long as the base material after peeling off 11 is bestowed suitable surface treatment, be reusable expensive SiC or sapphire substrate, this technology also has non-conductive substrate 11 in addition, for example sapphire substrate etc. changes conductive bond substrate 16 into, such as the advantage of Si substrate, the light-emitting diode of so making 100 is available for higher power applications, for example throws light on etc.This utilizes laser to peel off the technology that mode prepares light-emitting diode and has been disclosed in journal article: Appl.Phys.Lett., and 72 (5), February is in 1998.
When bestowing a suitable direct current pressure reduction at the p of above-mentioned light-emitting diode 100 type Ohmic electrode 181 and n type Ohmic electrode 182, the luminescent layer 132 that can make luminescence unit 13 produces light because of be laminated with (combination) in electronics electricity hole, this light that is produced by luminescent layer 132 can be by these reflector 14 reflections, and via light-emitting diode 100 and extraneous interface ejaculation, as the light path that is represented by dotted lines among Fig. 2, and not can as light in the light-emitting device can constantly reflect with reflect after change into heat energy and influence the reliability of element.
Though the above-mentioned method of utilizing the laser lift-off technology to make LED has the advantage of reusable substrate, but laser equipment cost height, useful life are shorter, and the control that focuses on is difficult for, and generally has the problem of yield deficiency, so be unsuitable for business-like volume production.
Summary of the invention
Therefore, purpose of the present invention is promptly utilized lift-off technology and cost is lower, yield is higher and be suitable for the method for the manufacturing light-emitting device of volume production providing a kind of.
So the method that the present invention is used to make light-emitting device comprises the following step:
(i) provide one first light-emitting component, this first light-emitting component comprises a base material, a hole intermediate layer, in regular turn by the gallium nitride based made basal layer of main material of classifying as, and the luminescence unit that can produce light, this intermediate layer comprises the pier portion that plural each interval is scattered, reach the spacer portion that is positioned at more than between this base material, basal layer and these pier portions, this spacer portion has a space, and these pier portions are made with this basal layer identical materials by one;
(ii) a bonded substrate is engaged to this luminescence unit on a side of this base material;
(iii) destroy this hole intermediate layer and this base material is peeled off, and form second light-emitting component of a tool one release surface; And
(iv) on this second light-emitting component, be electrically connected one first and one second electrode respectively, and form a light-emitting device.
This manufacture method is that first light-emitting component that utilizes this case applicant to be invented is prepared, this first light-emitting component is characterised in that: because have a hole intermediate layer, therefore, can utilize low cost, easy to control and destroy the intermediate layer and base material is peeled off in the commercial wet etch techniques that is used in a large number, perhaps has pore space structure because of the intermediate layer, even peel off base material so utilize laser, also can because of need destroy among the interbed volume less, and more in the past laser is peeled off lowly and yield is higher on cost.
Description of drawings
The present invention is described in detail below in conjunction with drawings and Examples:
Fig. 1 is a schematic diagram, and its explanation utilized the laser lift-off technology to make the method for light-emitting device in the past.
Fig. 2 is a generalized section, and its explanation utilized the light-emitting device of laser lift-off technology prepared tool one reflector and an electrically-conductive backing plate in the past.
Fig. 3 is a schematic diagram, and its explanation manufacture method of the present invention is utilized first light-emitting component in tool hole intermediate layer and the process that lift-off technology prepares light-emitting device.
Fig. 4 is a generalized section, prepared one second light-emitting component of its explanation step of manufacturing of the present invention (i)-(iii).
Fig. 5 is a generalized section, the prepared light-emitting device that contains an electrically-conductive backing plate of its explanation manufacture method of the present invention.
Fig. 6 is a generalized section, the prepared light-emitting device that contains a non-conductive substrate of its explanation manufacture method of the present invention.
Fig. 7 is a schematic perspective view, and its explanation the inventive method can prepare the hole intermediate layer by form the prominent projection of island that a plurality of gallium nitride series materials are constituted on a base material.
Fig. 8 is a generalized section, and its explanation the inventive method base portion with the identical material of island projection of can laterally growing up on aforesaid island projection forms basal layer.
Fig. 9 is a generalized section, and its explanation the inventive method can prepare first light-emitting component by forming steps such as island projection and crystalline substance laterally of heap of stone.
Figure 10 is a generalized section, and its explanation the inventive method can a plurality ofly block film by forming between between pier portion, guarantee the hole in intermediate layer.
Figure 11 is a generalized section, and its explanation the inventive method can be borrowed because form a reflector on the luminescence unit of first light-emitting component, increases light and takes out efficient.
Figure 12 is the view of an atomic force microscope, its explanation base material and the island projection that is formed on the base material.
Figure 13 is the cross section view of one scan formula electron microscope, and its explanation is formed on the spacer portion and the pier portion in the intermediate layer between basal layer and the base material.
Figure 14 is the cross section view of one scan formula electron microscope, and its explanation is with the etching solution etching after 20 minutes, and the intermediate layer is destroyed and make strippable substrate and form a coarse release surface.
Embodiment
Before the present invention is described in detail, be noted that in the following description content similar elements is to represent with identical numbering.
Preferably, manufacture method of the present invention is to comprise the following step:
(i) as shown in Figure 3, one first light-emitting component 21 is provided, this first light-emitting component 21 comprises a base material 3 in regular turn, one hole intermediate layer 4, one basal layer 5, and the luminescence unit 6 that can produce light, this intermediate layer 4 comprises the pier portion 41 that a plurality of each intervals are scattered, reach and be positioned at this base material 3 more than one, the spacer portion 42 that basal layer 5 and these pier portions are 41, this spacer portion 42 has a space 421, and these pier portions 41 and basal layer 5 are all by to classify main material as made with gallium nitride based, this luminescence unit 6 comprises that one is formed at first coating layer 61 on the basal layer 5, one is formed at the luminescent layer 62 on first coating layer 61, and second coating layer 63 that is formed on the luminescent layer 62;
(ii) by an adhesion coating 7 with a bonded substrate 8 be engaged to this luminescence unit 6 on the side 64 of this base material 3 (shown in Fig. 3 double-head arrow);
(iii) destroy this hole intermediate layer 4 and this base material 3 is peeled off, and form second light-emitting component 22 (as shown in Figure 4) of a tool one release surface 53; And
(iv), on this second light-emitting component 22, be electrically connected one first and one second electrode 300,400 respectively, and form a light-emitting device 500 as Fig. 5 or shown in Figure 6.
Be noted that, when the material of this basal layer 5 and first coating layer 61 are all the gallium nitride layer of high-concentration dopant, this step destructiveness (iii) can only be destroyed intermediate layer 4, and reservation basal layer 5, as Fig. 4 and ground shown in Figure 5, because the basal layer of this material 5 can conduct electricity, electrode 400 can directly be electrically connected with it.As shown in Figure 6, but when the material of basal layer 5 is not conductive gallium nitride series material through high-concentration dopant, then step (iii) must further be destroyed basal layer 5, and makes that release surface 53 is to be formed on first coating layer 61, and electrode 400 is electrically connected with first coating layer 61.
Preferably, the base material 3 of employed first light-emitting component 21 in the step (i), be selected from by the material in the following group that constitutes by one made: carborundum (SiC), sapphire (α-Al
2O
3), zinc oxide (ZnO), aluminium nitride and silicon (Si).
In first light-emitting component 21, the space 421 of spacer portion 42 can separate base material 3 and basal layer 5, and the pier portion 41 of while space between adjacent, and when destroying intermediate layer 4 in the wet etching mode, can in space 421, pour into etching solution pier portion 41 is corroded, and base material 3 is peeled off.
Preferably, these pier portions 41 in intermediate layer 4 are that its chemical formula is Al by to classify main material as made with gallium nitride based
xIn
yGa
1-x-yN, x 〉=0, y 〉=0,1 〉=x+y.
Preferably, these pier portions 41 generally are the awl cylindricality, and the width of the lateral cross section of each pier portion 41 is between between 10nm to 3000nm; Preferably, the width of the lateral cross section of each pier portion 41 is between between 50nm to 1500nm.These pier portions 41 are each other every between between 10nm to 3000nm; Preferably, these pier portions 41 are each other every between between 50nm to 1500nm.The thickness of these pier portions 41 is greater than 10nm.
Preferably, manufacture method of the present invention can further be carried out the following step that is used to prepare first light-emitting component 21 in step (i) before:
(a) as Fig. 7 and shown in Figure 8, be formed with on this base material 3 that a plurality of each intervals are scattered and by the made island projection 9 of gallium nitride series material, each island projection 9 has a pier portion 41 and on this base material 3 of being formed at and is formed at island portion 51 in this pier portion 41;
(b) as shown in Figure 8, utilize in these island portions 51, grow up material with the identical material of island projection 9 tools of crystal type laterally of heap of stone, and form more than one the base portion 52 of these island portions 51 of covering, this base portion 52 and these island portions 51 are one-body molded to be a basal layer 5, and the spacer portion 42 that has space 421 more than that defines jointly of this base material 3, these pier portions 41 and this base portion 52;
(c) as shown in Figure 9, on this basal layer 5, form this luminescence unit 6, and prepare first light-emitting component 21 in a tool hole intermediate layer 4.
In Fig. 9, because the base portion 52 of basal layer 5 is to be formed by the island portion 51 of island projection 9 crystalline substances laterally of heap of stone, so island portion 51 there is no tangible crystal boundary with base portion 52 and exists, so represent with dotted line.Laterally of heap of stone brilliant as for how to control, can be by using the made base material 3 of non-gallium nitride series material to carry out, because when the material of base material 3 is not the material of gallium nitride series, the lattice constant (lattice constant) that is to say base material 3 and gallium nitride series storeroom is not when matching, the gallium nitride series material that institute's desire is grown up can't be deposited on the base material 3, but tendency is formed on the island projection 9 with identical material.At last, laterally the grow up gallium nitride series material of (lateral growth) of the direction shown in Fig. 8 arrow is connected to each other and constitutes a base portion 52.And aforementioned base portion 52 can define the pore space structure in a space 421 to each other with base material 3 and island projection 9, also forms this hole intermediate layer 4 simultaneously.
Preferably, this step (a) can utilize metal organic chemical vapor deposition (metal-organic chemical vapordeposition is called for short MOCVD) to form island projection 9, and when carrying out MOCVD, required reactant comprises NH
3, contain the organic metal gas of gallium.The mixture that forms AlInGaN as desire then needs to feed the organic metal gas that contains the organic metal gas of aluminium and contain indium in addition, and suitable carrier gas comprises, but is not limited to H
2, N
2, or its mixture.
Preferably, this step (a) is carried out MOCVD by following manner: in 400 ℃～1200 ℃ growth temperature ranges, utilize lower NH on substrate
3The aluminum indium nitride gallium that dividing potential drop is directly grown up and had the island kenel.Or can be prior to the growth temperature (＜800 ℃) of the lower temperature aluminum indium nitride gallium cryosphere of growing up earlier down, then elevated temperature is to being higher than 950 ℃, and control NH
3Partial pressure makes aluminum indium nitride gallium cryosphere because of atmosphere transformation and temperature change and changes kenel at lower environment, and forms the aluminum indium nitride gallium resilient coating of island.
Preferably, this step (b) is undertaken by following manner: feed and to contain the organic metal gas of gallium, and be controlled at and carry out the side direction building crystal to grow under the temperature that is lower than 1200 ℃.
This step (c) can utilize any mode in the past to prepare, such as aforesaid MOCVD, and this does not repeat them here for the technology that industry is known.
It should be noted that above-mentioned growing method is all very ripe and known by industry.The method of growing up also can be used molecular beam epitaxy (molecular beam epitaxy) or other similar method.In addition, because factor affecting such as the control of processing procedure and stability, Bu Fen these island projections 9 can be connected with each other sometimes, that is to say not only one of the quantity of spacer portion 42, but be formed with the spacer portion 42 of majority, and the space 421 of part spacer portion 42 communicates with each other.
Preferably, as shown in figure 10, manufacture method of the present invention also comprises one between step (a) and the step (a-1) (b), this step (a-1) is after aforementioned these island projections 9 form, on this base material 3, do not formed the more than one film 422 that blocks, block film 422 and be by one and constituted with the unmatched material of lattice constant of these basal layer 5 materials by 9 coverings place of island projection.
Preferably, it is made by silicon nitride (silicon nitride) or magnesium nitride (magnesium nitride) blocking film 422.The preparation method that blocks film 422 of silicon nitride material is after aforesaid most island projections 9 (being pier portion 41 and island portion 51) are made, with silane (SiH
4) and ammonia (NH
3) be that reacting gas reacts generation.The preparation of blocking film 422 of magnesium nitride material also can be carried out according to similar fashion or previous methods.
Because in the process of preparation island projection 9, the gallium nitride series material that a little may remainingly not arranged by 41 coverings place 31 of pier portion on base material 3 surfaces, so before step (b) crystalline substance laterally of heap of stone, what form earlier tool different lattice constants material blocks film 422 (step (a-1)), the base portion 52 of basal layer 5 is laterally to be grown up by island portion 51 in the time of can guaranteeing laterally to build crystalline substance, but not go up the remaining gallium nitride series materials vertical growth that makes progress by base material 3 surface, also can further guarantee the existence of space 421 (hole) simultaneously.
Preferably, as shown in figure 11, manufacture method of the present invention also comprises one between step (i) and the step (i-1) (ii), and this step (i-1) is the reflector 200 that formation one is made of metal on this luminescence unit 6 before engaging this bonded substrate 8, and makes a light-emitting device 500.Be applicable to that the metal as reflector 200 comprises, but be not limited to gold (Au) and silver (Ag).The light that is produced in the luminescent layer 62 of luminescence unit 6 can be reflected in reflector 200, and the light that increases light-emitting device 500 takes out efficient, therefore when the bonded substrate 8 of use is easy extinction substrate, is preferably and comprises step (i-1).
Preferably, as shown in Figure 3, manufacture method of the present invention also comprises one between step (i) and the step (i-2) (ii), and step (i-2) is the luminescence unit 6 of this first light-emitting component 21 to be bestowed one separate (isolation) and handle, to form a plurality of blocks separately.Step (i-2) can form a plurality of essence by dry ecthing (ICP) processing procedure and vertically run through first coating layer 61, luminescent layer 62 in luminescence unit 6, and the channel (channel) of second coating layer 63, and luminescence unit 6 is separated into a plurality of chips (chip), to improve the yield of final products.
About being applicable to that step bonded substrate 8 (ii) comprises conduction and non-conductive series, below divide two parts illustrate when substrate for conducting electricity and when non-conductive the different configuration scenarios of two electrodes 300,400:
(1) as shown in Figure 5, when bonded substrate 8 is electrically-conductive backing plate (mostly also for high thermal conductance substrate), such as when silicon, GaAs or copper, step two electrodes the 300, the 400th (iv) are configured in respectively on bonded substrate 8 and the release surface 53.Use conduction (heat conduction) bonded substrate 8 made light-emitting devices 500 can be used to easily produce in the illumination (as car light) of a large amount of heat energy.
(2) as shown in Figure 6, when bonded substrate 8 is a non-conductive substrate, for example when zinc oxide or sapphire, the inventive method also comprises one between step (iii) and the step (iv) (iii-1), this step (iii-1) is first coating layer 61 of luminescence unit 6, luminescent layer 62 and second coating layer 63 to be parallel to these stacked directions of putting 600 along an essence carry out part and remove (square of representing as dotted line), and forms one remove face 631 on this second coating layer 63.This step (iv) is to remove in this to be electrically connected this first and second electrode 300,400 on face 631 and the (iii) formed release surface 53 of this step respectively then.
The relevant material that is applicable to during step is (ii) as adhesion coating, but the conduction property of optic placode changes.When bonded substrate 8 can conduct electricity, can use conductive bonding material, such as Au/Sn or Pd/In.When bonded substrate 8 can not conduct electricity, can use non-conductive grafting material, such as epoxy resin (epoxy) etc.
Preferably, the (iii) formed release surface 53 of step is a nanoscale matsurface.The light that this nanoscale matsurface can increase light-emitting device 500 takes out efficient.
Preferably, step (iii) is by the wet etching mode this base material 3 to be peeled off, because etching solution can infiltrate in the space 421 in intermediate layer 4 apace.Be applicable to that step etching solution (iii) is these for the etch-rate of the material Tu of the basal layer 5 etch-rate person greater than base material 3, for example potassium hydroxide solution (KOH), hydrochloric acid solution (HCl), phosphoric acid solution (H
3PO
4) or chloroazotic acid etc.When removing hole intermediate layer 4 in the wet etching mode, release surface 53 can form a nanoscale matsurface because of etching naturally.
In addition, step (iii) also can peel off base material 3 by laser, is applicable to that laser of the present invention is known by industry, such as KrF etc., also can be with reference to paper Appl.Phys.Lett., and 72 (5), February, 1998 announcement.When using laser to peel off base material 3, because the focusing failure mode of laser is difficult for producing coarse release surface, so the inventive method also is included in step (iii) and the step (iv) (iii-2), step (iii-2) is that the release surface 53 that step (iii) forms is processed into a nanoscale matsurface.The roughness of relevant release surface 3 can be made by aforesaid wet etching, and the etching solution that is suitable for is with aforementioned.
Optionally, step (iii) in except the pier portion 41 that destroys hole intermediate layer 4, can further destroy this basal layer 5, promptly this release surface 53 is to be formed at the pier portion 41 of island projection 9 and the top of island portion 51 boundary lines 91, boundary line 91 is as shown in figure 10.
The degree that abovementioned steps is (iii) destroyed can be by using different failure modes to control.When for example using wet etching, can be when destroying intermediate layer 4 pier portions 41, also the base portion 52 with basal layer 5 is destroyed, and basal layer 5 ruined degree are to be limited by etching parameter, comprises etching period and etchant concentration etc.When using laser to destroy hole intermediate layer 4, then can control failure position more accurately in the intermediate layer 4.
As described above, when the material of basal layer 5 when being non-conductive, then step (iii) needs further to destroy first coating layer 61 of this luminescence unit 6, and release surface 53 is formed on first coating layer 61, so can't seriously undermine the illumination effect of light-emitting device 500.
The present invention will be described further with regard to following examples, but will be appreciated that, these embodiment are the usefulness for illustrating only, and should not be interpreted as restriction of the invention process.
Embodiment
＜embodiment 1 〉
With reference to Fig. 3～11, present embodiment is to prepare a light-emitting device 500 according to the following step:
(a) at first a sapphire substrate 3 is inserted the carrier of a reactor, feed H then
2 (g), and elevated temperature to 1100 is cooled in 400 ℃～1200 ℃ growth temperature ranges then ℃ to carry out the substrate high-temperature process, (Tri-methyl Gallium is called for short TMGa to feed the trimethyl gallium gas of flow 50sccm
(g)) with the NH of dividing potential drop 20slm
3 (g), the direct island projection 9 of gallium nitride growth on substrate sees also the view of the atomic force microscope (Atomic Force Microscopy) of Figure 12;
(b) under about 1000 ℃ temperature, feed TMGa
(g)(50sccm), to carry out the side direction building crystal to grow, and continue to 5 one-tenth of basal layers and reach 3 μ m, and finish the side direction building crystal to grow and seal all spaces 421, see also the cross section view of the sweep electron microscope (Scanning Electronic Microscopy) of Figure 13;
(c) feed SiH
4 (g)Becoming N type doped chemical, is the n-type gallium nitride semiconductor coating layer of 2 μ m to form thickness on basal layer 5, stop supplies TMGa after finishing
(g)With SiH
4 (g), with carrier gas by H
2 (g)Be converted to N
2 (g), and continue to feed NH
3 (g)Then cool the temperature to 750 ℃, the growth of luminescent layer is carried out in preparation, the GaN carrier barrier layer with 200 thickness of at first growing up, an InGaN (InGaN) carrier of then growing up limitation layer, then grow up one 200 thickness GaN carrier barrier layer and form a luminous zone, repeat the growth of this luminous zone structure, and form a multiple luminescent layer.Then carrier gas is switched to H
2 (g), keep feeding NH
3 (g), elevated temperature to 900 ℃ then, and feed TMGa
(g)With Cp
2Mg
(g)Forming thickness is the P type semiconductor coating layer of 1500 , and prepares first light-emitting component 21 as shown in Figure 3;
(ii) on this first light-emitting component 21, apply an epoxy resin, and utilize pressure sintering that one silicon substrate 8 is engaged on this luminescence unit 6;
(iii) (ii) the prepared element that is combined with silicon substrate 8 is dipped in the chloroazotic acid and lasts about 20 minutes, to destroy intermediate layer 4 and sapphire substrate 3 peeled off, and form a coarse release surface 53, see also the cross section view of the sweep electron microscope of Figure 14;
(iv) utilize the evaporation mode respectively at forming a Cr/Au electrode 300,400 on siliceous fish plate 8 and the release surface 53, promptly finish the preparation of light-emitting device 500.
＜embodiment 2 〉
Preparing light-emitting device 500 with embodiment 1 identical step, difference be in: further between the step (a) and (b), carry out step (a-1), in reactor, feed SiH exactly
4(flow～40sccm) makes reaction form silicon nitride and blocks film 422 (thickness is greater than 1 ), and aluminum indium nitride gallium island projection 9 is coated by silicon nitride.
＜embodiment 3 〉
To prepare light-emitting device 500 with embodiment 1 identical step, difference be in: step is (ii) used sapphire substrate but not siliceous fish plate, and further (iii), carry out step (iii-1) between (iv) in step, utilizing dry ecthing that first coating layer 61, luminescent layer 62 and second coating layer 63 are parallel to these the stacked direction of putting 600 parts along an essence exactly removes, and formation one removes face 631 on this second coating layer 63, and step (iv) is to be electrically connected a Cr/Au electrode 300,400 on face 631 and the release surface 53 respectively in removing then.
The characteristics of present embodiment are: because step (iii) is to use the wet etching mode to destroy hole intermediate layer 4, formed release surface 53 is a nanoscale matsurface, though so use sapphire substrate equally as bonded substrate 8, the sapphire substrate 3 that replaces first light-emitting component 21, but, and make the light taking-up efficient of prepared light-emitting device 500 to come goodly than the light-emitting diode that generally be substrate with the sapphire because of the roughness of formation release surface 53.
Conclude above-mentioned, the present invention is used to make the method for light-emitting device, be to utilize first light-emitting component in a tool hole intermediate layer to carry out for start configuration, therefore when peeling off base material, even carry out with laser lift-off technology in the past, also can reduce and peel off cost, more particularly, because interbed among the employed first light-emitting component tool hole, therefore can use the wet etching mode to peel off base material, on cost, utilized the base material lift-off technology to make the method for light-emitting device really more in the past, came to such an extent that reduce much.
Claims (25)
1. a method that is used to make light-emitting device is characterized in that, comprises the following step:
(i) provide one first light-emitting component, this first light-emitting component comprises a base material, a hole intermediate layer, in regular turn by the gallium nitride based made basal layer of main material of classifying as, and the luminescence unit that can produce light, this intermediate layer comprises the pier portion that a plurality of each intervals are scattered, and be positioned at spacer portion between this base material, basal layer and described pier portion more than one, this spacer portion has a space, and described pier portion is made with this basal layer identical materials by one;
(ii) a bonded substrate is engaged to this luminescence unit on a side of this base material;
(iii) destroy this hole intermediate layer and this base material is peeled off, and form second light-emitting component of a tool one release surface; And
(iv) on this second light-emitting component, be electrically connected one first and one second electrode respectively, and form a light-emitting device.
2. the method that is used to make light-emitting device as claimed in claim 1, it is characterized in that: the pier portion in the intermediate layer of first light-emitting component is that to classify main material as made with gallium nitride based by one in this step (i), should be Al with the gallium nitride based chemical formula of classifying main material as
xIn
yGa
1-x-yN, x 〉=0, y 〉=0,1 〉=x+y.
3. the method that is used to make light-emitting device as claimed in claim 1 is characterized in that: the intermediate layer of first light-emitting component has the thickness greater than 10 nanometers in this step (i).
4. the method that is used to make light-emitting device as claimed in claim 1 is characterized in that: the described pier portion interval each other of first light-emitting component is between between 10 to 3000 nanometers in this step (i).
5. the method that is used to make light-emitting device as claimed in claim 4 is characterized in that: the described pier portion interval each other of first light-emitting component is between between 50 to 1500 nanometers in this step (i).
6. the method that is used to make light-emitting device as claimed in claim 1 is characterized in that: the described pier portion in the intermediate layer of first light-emitting component generally is the awl cylindricality in this step (i), and the width of the lateral cross section of pier portion is between between 10 to 3000 nanometers.
7. the method that is used to make light-emitting device as claimed in claim 6 is characterized in that: the width of the lateral cross section of described pier portion is between between 50 nanometer to 1500 nanometers.
8. the method that is used to make light-emitting device as claimed in claim 1 is characterized in that: in this step (i) base material of first light-emitting component be selected from by the material in the following group that constitutes by one made: carborundum, sapphire, zinc oxide, aluminium nitride and silicon.
9. the method that is used to make light-emitting device as claimed in claim 1, it is characterized in that: the luminescence unit of first light-emitting component has one and is formed at first coating layer, on the base portion of this basal layer and is formed at luminescent layer on this first coating layer in this step (i), and second coating layer that is formed on this luminescent layer, this first coating layer and second coating layer are respectively that to have a semi-conducting material of carrier of corresponding and different kenels made.
10. the method that is used to make light-emitting device as claimed in claim 9 is characterized in that: this first coating layer is made by n N-type semiconductor N material, and this second coating layer is made by p N-type semiconductor N material.
11. the method that is used to make light-emitting device as claimed in claim 1 is characterized in that, also comprises to be listed in the step that preceding being used to of step (i) prepares this first light-emitting component down:
(a) be formed with on this base material that a plurality of each intervals are scattered and by the made island projection of gallium nitride series material, each island projection has a pier portion and on this base material of being formed at and is formed at island portion in this pier portion;
(b) utilize in described island portion, grow up material with the identical material of island projection tool of crystal type laterally of heap of stone, and form more than one the base portion that covers described island portion, this base portion and described island portion are one-body molded to be a basal layer, and this base material, described pier portion and this base portion define jointly this have the spacer portion in space;
(c) on this basal layer, form this luminescence unit.
12. the method that is used to make light-emitting device as claimed in claim 11, it is characterized in that, also be included in step (a) and (b) between step (a-1), this step (a-1) is after aforementioned described island projection forms, and is not blocked film in being formed more than one by one by covering place of island projection on this base material with the unmatched material of lattice constant of this basal layer material constitutes.
13. the method that is used to make light-emitting device as claimed in claim 1, it is characterized in that, also comprise one between step (i) and the step (i-1) (ii), this step (i-1) is to form a reflector that is made of metal before engaging this bonded substrate on this luminescence unit.
14. as claim 1 or the 13 described methods that are used to make light-emitting device, it is characterized in that, also comprise one between step (i) and the step (i-2) (ii), this step (i-2) is that this first light-emitting component is bestowed a separating treatment, to form a plurality of blocks separately.
15. the method that is used to make light-emitting device as claimed in claim 1 is characterized in that: the (ii) employed bonded substrate of this step is an electrically-conductive backing plate.
16. the method that is used to make light-emitting device as claimed in claim 15 is characterized in that: this step (iv) is on this bonded substrate and the (iii) formed release surface of this step, is electrically connected this first and second electrode respectively.
17. the method that is used to make light-emitting device as claimed in claim 1, it is characterized in that: the (ii) employed bonded substrate of this step is a non-conductive substrate, and this luminescence unit has one and is formed at first coating layer, on the base portion of this basal layer and is formed at luminescent layer on this first coating layer, and second coating layer that is formed on this luminescent layer, this first coating layer and second coating layer are respectively that to have a semi-conducting material of carrier of corresponding and different kenels made.
18. the method that is used to make light-emitting device as claimed in claim 17, it is characterized in that, also comprise one (iii) and the step (iv) (iii-1) between step, this step (iii-1) is this first coating layer, luminescent layer and second coating layer to be parallel to described stacked direction of putting along an essence carry out part and remove, and formation one removes face on this second coating layer, and this step (iv) is to remove on face and the (iii) formed release surface of this step in this to be electrically connected this first and second electrode respectively then.
19. the method that is used to make light-emitting device as claimed in claim 1 is characterized in that: this step (iii) in formed release surface be a nanoscale matsurface.
20. the method that is used to make light-emitting device as claimed in claim 1 is characterized in that: this step (iii) is by the wet etching mode this base material to be peeled off.
21. the method that is used to make light-emitting device as claimed in claim 20, it is characterized in that: this step wet etching (iii) is to use one to be undertaken by the etching solution in the following group that constitutes: potassium hydroxide solution, hydrochloric acid solution, phosphoric acid solution, and chloroazotic acid.
22. the method that is used to make light-emitting device as claimed in claim 1 is characterized in that: this step (iii) is by laser this base material to be peeled off.
23. the method that is used to make light-emitting device as claimed in claim 22, it is characterized in that, also be included in step (iii) and the step (iv) (iii-2), this step (iii-2) be with step (iii) in formed release surface be processed into a nanoscale matsurface.
24. the method that is used to make light-emitting device as claimed in claim 1 is characterized in that: this step is further destroyed this basal layer in (iii).
25. the method that is used to make light-emitting device as claimed in claim 17 is characterized in that: this step is further destroyed this first coating layer in (iii).
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101752471A (en) * | 2008-12-05 | 2010-06-23 | 晶元光电股份有限公司 | Photoelectric element |
| US8093081B2 (en) | 2009-03-30 | 2012-01-10 | Industrial Technology Research Institute | Device of light-emitting diode and method for fabricating the same |
| CN101872815B (en) * | 2009-04-21 | 2012-07-04 | 财团法人工业技术研究院 | Light-emitting diode structure and element and manufacturing method thereof |
| CN104221170A (en) * | 2012-03-19 | 2014-12-17 | 首尔伟傲世有限公司 | Method for separating epitaxial layers and growth substrates, and semiconductor device using same |
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| JP3525061B2 (en) * | 1998-09-25 | 2004-05-10 | 株式会社東芝 | Method for manufacturing semiconductor light emitting device |
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| CN101752471A (en) * | 2008-12-05 | 2010-06-23 | 晶元光电股份有限公司 | Photoelectric element |
| CN101752471B (en) * | 2008-12-05 | 2014-03-26 | 晶元光电股份有限公司 | Photoelectric element |
| US8093081B2 (en) | 2009-03-30 | 2012-01-10 | Industrial Technology Research Institute | Device of light-emitting diode and method for fabricating the same |
| US8502190B2 (en) | 2009-03-30 | 2013-08-06 | Industrial Technology Research Institute | Device of light-emitting diode |
| CN101872815B (en) * | 2009-04-21 | 2012-07-04 | 财团法人工业技术研究院 | Light-emitting diode structure and element and manufacturing method thereof |
| CN104221170A (en) * | 2012-03-19 | 2014-12-17 | 首尔伟傲世有限公司 | Method for separating epitaxial layers and growth substrates, and semiconductor device using same |
| CN104221170B (en) * | 2012-03-19 | 2017-02-22 | 首尔伟傲世有限公司 | Method for separating epitaxial layers and growth substrates, and semiconductor device using same |
| US9882085B2 (en) | 2012-03-19 | 2018-01-30 | Seoul Viosys Co., Ltd. | Method for separating epitaxial layers from growth substrates, and semiconductor device using same |
| CN108233178A (en) * | 2016-12-12 | 2018-06-29 | 联亚光电工业股份有限公司 | Semicondcutor laser unit |
| CN109755358A (en) * | 2018-12-30 | 2019-05-14 | 广东省半导体产业技术研究院 | vertical structure device and preparation method thereof |
| CN109755358B (en) * | 2018-12-30 | 2020-05-22 | 广东省半导体产业技术研究院 | Vertical structure device and preparation method thereof |
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