CN1516294A - Vertical component structure of gallium nitride base light-emitting diode and its making method - Google Patents
Vertical component structure of gallium nitride base light-emitting diode and its making method Download PDFInfo
- Publication number
- CN1516294A CN1516294A CNA031002498A CN03100249A CN1516294A CN 1516294 A CN1516294 A CN 1516294A CN A031002498 A CNA031002498 A CN A031002498A CN 03100249 A CN03100249 A CN 03100249A CN 1516294 A CN1516294 A CN 1516294A
- Authority
- CN
- China
- Prior art keywords
- gan
- layer
- metal oxide
- multilayer epitaxial
- vertical component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention relates to a gallium nitride-based LED's vertical component structure and making method, mainly using a base plate unit with a light cover to build crystal and deposit a multilayer crystal-built structure, separating the base plate unit from the multilayer crystal-built structure in the light cover positon; wherein, after taking out the multilayer crystal-built structure, able to set a metal reflecting layer at the bottom of the multilayer crystal-built structure, able to glue a conductive base plate by the metal reflecting layer, and able to set P/N electrodes on the top surface of the multilayer crystal-built structure and at the bottom of the conductive base plate, respectively; thus, composing the vertical component structure.
Description
Affiliated technical field:
The present invention relates to a kind of vertical component structure and manufacture method thereof of gallium nitride based light emitting diode, especially refer to a kind of light-emitting diode person (light-emitting diode that is applicable to gallium nitrate based (GaN-based) III-V family material, be called for short LED), main system utilizes a base board unit with light shield (mask), brilliant deposition one multilayer epitaxial structure of heap of stone continues, after base board unit and multilayer epitaxial structure are inserted tool, can be (for example: shearing action) by application of force effect, make base board unit can separate by the light shield place, to take out the multilayer epitaxial structure with the multilayer epitaxial structure; Wherein, this multilayer epitaxial structure after taking-up, can be provided with a metallic reflector in the bottom, and can bind an electrically-conductive backing plate by metallic reflector, and P type electrode can be arranged at the upper surface of multilayer epitaxial structure, and N type electrode is arranged at the electrically-conductive backing plate bottom; By this, to constitute the vertical component structure of LED.
Background technology:
The relevant structure that " gallium nitride based LED light-emitting device " arranged of practising is an example with the 15th figure those shown now, enumerate its formation and technological means as after, sincerely please refer to:
General GaN brilliant sedimentary deposit of heap of stone can be grown up on GaN substrate or sapphire (sapphire) substrate, yet, because costing an arm and a leg of GaN substrate, so, the substrate 90 of habit formula " gallium nitride based LED light-emitting device ", mostly be sapphire (sapphire) substrate greatly, and on substrate 90, grow up in regular turn resilient coating 91, n-GaN layer 92, active layer 93, p-GaN layer 94, make n-GaN layer 92 have the face of exposing 92a with etching method (Etching), so that n type electrode 96 to be set, and p type electrode 95 is set on p-GaN layer 94, and constitute the light-emitting device of a LED.
Only, aforesaid habit formula person, though adopt comparatively cheap sapphire (sapphire) substrate of price, yet when encapsulating, but need distinctly p type electrode 95 and n type electrode 96 routings are implemented routing twice, therefore, packaging cost for successive process is higher, and the possibility that also causes fraction defective to increase.
Moreover aforesaid habit formula person is the cross-member structure but not the vertical component structure need impose etching method (Etching), and GaN brilliant sedimentary deposit of heap of stone is removed some, so that n type electrode 96 to be set, therefore, and the effectively luminous area that must detract, and desirable to the greatest extent.
In addition, aforesaid habit formula person is to adopt sapphire (sapphire) substrate, because the cutting of sapphire (sapphire) is not easy, therefore, in die process, degree of difficulty is higher.
Summary of the invention:
Based on above-mentioned cause, the present inventor thinks: if can adopt the comparatively cheap sapphire of price (sapphire) substrate earlier, smoothly behind the growth GaN brilliant sedimentary deposit of heap of stone, suitably peel off sapphire (sapphire) substrate non-conductive and difficult cutting, stick conductive substrate again, to can be made into the vertical component structure of gallium nitride based LED light-emitting device, and significantly improve above-mentioned " prior art " not desirable locating and the practical effect that gains to the greatest extent.
So, main purpose of the present invention, being provides a kind of " the vertical component structure and the manufacture method thereof of gallium nitride based LED ".
The technical solution used in the present invention is:
A kind of " manufacture method of gallium nitride based LED vertical component structure ", system is by a base board unit with light shield, the brilliant deposition one of heap of stone that continues has the multilayer epitaxial structure of active layer, make base board unit and multilayer epitaxial structure between, because of light shield forms structural tender spots, in order to taking out the multilayer epitaxial structure, after the multilayer epitaxial structure takes out, can electrically-conductive backing plate be set in multilayer epitaxial structure bottom, and the P/N electrode distinctly is set in the upper surface of multilayer epitaxial structure and electrically-conductive backing plate bottom, and constitute the vertical component structure of one gallium nitrate based (GaN-based) light-emitting diode.
A kind of " the vertical component structure of gallium nitride based LED " comprises a multilayer epitaxial structure, a metallic reflector, an electrically-conductive backing plate, a p type metal electrode, and formation such as a n type metal electrode; Wherein:
This multilayer epitaxial structure, be can by n-GaN layer, MQW active layer, and institute such as contact layer in regular turn building crystal to grow form;
This metallic reflector is the bottom that is plated on the n-GaN semiconductor layer in the mode of plating or sputter, can reflect the light that the multilayer epitaxial structure is produced;
This electrically-conductive backing plate can be Si-n type substrate, and via heating and pressurizing, and is fixedly arranged on the bottom of metallic reflector;
This p type metal electrode is the upper surface that is arranged at the multilayer epitaxial structure;
And this n type metal electrode is the bottom that is arranged at electrically-conductive backing plate; By this, to constitute the vertical component structure of one gallium nitrate based (GaN-based) light-emitting diode.
A kind of " the vertical component structure of gallium nitride based LED " comprises a multilayer epitaxial structure, a metallic reflector, an electrically-conductive backing plate, a p type metal electrode, and formation such as a n type metal electrode; Wherein:
This multilayer epitaxial structure, be can by n-GaN layer, MQW active layer, p-type DBR, and institute such as contact layer in regular turn building crystal to grow form;
This metallic reflector is the bottom that is plated on the n-GaN semiconductor layer in the mode of plating or sputter, can reflect the light that the multilayer epitaxial structure is produced;
This electrically-conductive backing plate can be Si-n type substrate, and via heating and pressurizing, and is fixedly arranged on the bottom of metallic reflector;
This p type metal electrode is the upper surface that is arranged at the multilayer epitaxial structure;
And this n type metal electrode is the bottom that is arranged at electrically-conductive backing plate; By this, constituting the vertical component structure of one gallium nitrate based (GaN-based) light-emitting diode, and can form a resonant cavity by metallic reflector and p-type DBR.
A kind of " the vertical component structure of gallium nitride based LED " comprises a multilayer epitaxial structure, a metallic reflector, an electrically-conductive backing plate, a p type metal electrode, and formation such as a n type metal electrode; Wherein:
This multilayer epitaxial structure, be can by institutes such as n-GaN layer, the 2nd MQW active layer, the 2nd n-GaN layer, a MQW active layer, p-type DBR, contact layer in regular turn building crystal to grow form;
This metallic reflector is the bottom that is plated on the n-GaN semiconductor layer in the mode of plating or sputter, can reflect the light that the multilayer epitaxial structure is produced;
This electrically-conductive backing plate can be Si-n type substrate, and via heating and pressurizing, and is fixedly arranged on the bottom of metallic reflector;
This p type metal electrode is the upper surface that is arranged at the multilayer epitaxial structure;
And this n type metal electrode is the bottom that is arranged at electrically-conductive backing plate; By this, constituting the vertical component structure of one gallium nitrate based (GaN-based) light-emitting diode, and can form a resonant cavity by metallic reflector and p-type DBR, the mixed light process of a MQW active layer and the 2nd MQW active layer, and can be finished by resonant cavity.
The beneficial effect that the present invention had is;
1, final substrate of the present invention is not sapphire (sapphire) substrate, so in die process, the present invention is easy to cutting.
2, the present invention is for successive process, and it is lower to make difficulty, that is in die process, the present invention need not to impose etching method (Etching).
3, the present invention is because of need not to impose etching method (Etching), so effectively luminous area does not detract.
4, the present invention does not detract because of efficient lighting area, so under identical efficient lighting area, it is little that crystal grain of the present invention can be practised formula person, economic benefit is higher.
5, the present invention is the vertical component structure, only need implement one time routing when encapsulating, and therefore, it is low to practise formula person for the packaging cost of successive process, and also reduces the possibility that causes fraction defective.
6, electrically-conductive backing plate of the present invention can be silicon (Si) material, and conductive coefficient is higher, is about six times of sapphire (sapphire) substrate, so applicable to the high power assembly.
Feature of the present invention, technological means, concrete function and specific embodiment, continue describe in detail with graphic, figure number as after.
Description of drawings:
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the step schematic diagram of the inventive method preferred embodiment;
Fig. 2 and Fig. 3 are the enforcement view of the inventive method;
Fig. 4 is the grow up schematic diagram of multilayer epitaxial structure of the present invention;
Fig. 5 is the profile of structure preferred embodiment of the present invention;
Fig. 6 is the profile of structure second embodiment of the present invention;
Fig. 7 is the profile of structure the 3rd embodiment of the present invention;
Fig. 8 is the profile of structure the 4th embodiment of the present invention;
Fig. 9 is the profile of structure the 5th embodiment of the present invention;
Figure 10 is the profile of structure the 6th embodiment of the present invention;
Figure 11 to Figure 14 is the enforcement schematic diagram of base board unit of the present invention; And
Figure 15 is the structural representation of existing gallium nitride based LED light-emitting device
Embodiment:
It is a kind of by a base board unit 1 with light shield 12 that the topmost intention spirit of the present invention is to provide, the brilliant deposition one of heap of stone that continues has the multilayer epitaxial structure 2 of active layer, make base board unit 1 and multilayer epitaxial structure 2 between, form structural tender spots because of having light shield 12, in order to taking out multilayer epitaxial structure 2, after multilayer epitaxial structure 2 takes out, electrically-conductive backing plate 33 and P/N electrode can be set, and constitute the vertical component structure of one gallium nitrate based (GaN-based) light-emitting diode; Its architectural feature and the space kenel that is constituted are the elite place of intention of the present invention in fact.
For further understanding feature of the present invention, technological means and the concrete function of being reached, purpose, enumerate now of the present invention than specific embodiment, continue describe in detail with graphic, figure number as after.
See also Fig. 1 to shown in Figure 3, the inventive method can comprise following step:
Should give the expositor around here, is to be: when the material of light shield 12 is SiO
2The time, between step 3 of the inventive method and step 4 can further comprise the step of step 4a " with hydrogen fluoride (HF) etching some "; That is subsequent steps 3 can be earlier with base board unit 1 and multilayer epitaxial structure 2, with hydrogen fluoride (HF) solvent or B.O.E (buffer oxide etchant) etchant, to SiO
2 Light shield 12 etching somes make structure more fragile, in order to follow-up when the execution in step 4, easier taking-up multilayer epitaxial structure 2.
Should give the expositor more around here, be to be: the effect of this metallic film 32, tie up in via heating and pressurizing, and metallic film 32 is binded mutually with metallic reflector 31, and set firmly electrically-conductive backing plate 33; So this metallic film 32 can be the material identical with metallic reflector 31, and is perhaps different with metallic reflector 31, however can with the metallic reflector 31 heating and pressurizing material of binding together.
Should give the expositor more around here, be to be: this metallic reflector 31, and can be Ag/Al material (promptly plate silver earlier, plated aluminum makes unlikely the exposing of silver again), or be the Ag material, or any metal material.
Intending around here giving proposing the expositor, is to be again: in the step 5 of the inventive method, when enough as if the thickness of metallic reflector 31 (at least more than 1 μ m), in step 6, this metallic film 32 can further be omitted; That is this metallic reflector 31 and electrically-conductive backing plate 33 can be directly via heating and pressurizing, and bind mutually, and this also sets firmly mode for another of electrically-conductive backing plate 33.
See also shown in Figure 4, in preferred embodiment, base board unit 1 of the present invention can by a substrate 10, a resilient coating 11, and several light shield 12 constituted; Wherein:
This substrate 10 can be sapphire (sapphire) material, and thickness is between 300 to 500 μ m, in order to building crystal to grow one multilayer epitaxial structure 2;
This resilient coating 11 can be the GaN resilient coating, and grows up on the upper surface 10a of substrate 10;
This light shield 12 can be SiO
2, or SiN or SiN
xEtc. material, and be formed on the resilient coating 11.
See also again shown in Figure 4, in preferred embodiment, multilayer epitaxial structure 2 of the present invention can by institutes such as a n-GaN layer 21, a multiple quantum well (Multi-Quantum Well is called for short MQW) active layer 22, a contact layer 27 in regular turn building crystal to grow form; Wherein:
This n-GaN layer 21 can be doped n-GaN semiconductor layer (for example: doping Si, to reach the purpose of conduction), and thickness can be at 2 to 6 μ m;
This MQW active layer 22 can be the MQW of InGaN/GaN, and the light-generating layer (light generating layer) of serve as reasons after the energising " electricity produces light ", and wavelength (λ) can be between 380nm to 600nm;
This contact layer 27 is that (thickness can be at 0.2 to 0.5 μ m for p+-GaN-based) semiconductor layer for example: p-GaN, p-InGaN, p-AlInGaN for p-GaN system.
See also shown in Figure 5, according to the inventive method, " vertical component structure " of the present invention comprises a multilayer epitaxial structure 2, a metallic reflector 31, an electrically-conductive backing plate 33, a p type metal electrode (p-type metal contact) 40, and formation such as a n type metal electrode (n-type metal contact) 50 in preferred embodiment; Wherein:
This multilayer epitaxial structure 2, be can by the MQW 22 of the semiconductor layer 21 of a n-GaN, an InGaN/GaN, and the institutes such as semiconductor layer 27 of a p+-GaN-based in regular turn building crystal to grow form;
This metallic reflector 31 be semiconductor layer 21 bottoms that are plated on n-GaN in the mode of plating or sputter, and in order to bind electrically-conductive backing plate 33, reflectivity can be more than 90%;
This electrically-conductive backing plate 33 can be Si-n type substrate, and can be doped with phosphorus (P), arsenic V group elements such as (As), or Ge-n type substrate, or GaAs-n type substrate, or InP-n type substrate, or GaP-n type substrate etc., thickness can be between 100 to 300 μ m;
This p type metal electrode 40 is the upper surface 20 that is arranged at multilayer epitaxial structure 2, promptly on the semiconductor layer 27 of p+-GaN-based;
This n type metal electrode 50 is the bottom 33a that is arranged at electrically-conductive backing plate 33;
And metallic reflector 31 can reflect the light that multilayer epitaxial structure 2 is produced, and absorbed by Si-n type substrate and detracts avoiding;
By this, to constitute the vertical component structure of one gallium nitrate based (GaN-based) light-emitting diode.
See also shown in Figure 6, in a second embodiment, this multilayer epitaxial structure 2 can be on the basis of preferred embodiment, further on the semiconductor layer 27 of p+-GaN-based, with the grow up metal oxide layer 28 of a suitable thickness and light-permeable of mode of heap of stone brilliant, and as Window layer; Wherein:
This metal oxide layer 28 can be the metal oxide layer of ZnO material or the metal oxide layer of ZnO doping aluminium (Al); Or can be In
xZn
1-xO, Sn
xZn
1-xO, In
xSn
yZn
1-x-yThe metal oxide layer person that material constituted such as O, and 0≤X≤1, and 0≤Y≤1, and 0≤X+Y≤1; Or can be refractive index (refractive index) at least 1.5 metal oxide layer person; Or can be the metal oxide layer person of n type conduction (n-type conduction) or p type conduction (p-type conduction); Or can be the metal oxide layer person who is doped with rare earth element (rare earth-doped), thickness can be at 50 to 50 μ m;
And this p type metal electrode 40 is the upper surface 20 that is arranged at multilayer epitaxial structure 2, promptly on the metal oxide layer 28.
See also shown in Figure 7, in the 3rd embodiment, this multilayer epitaxial structure 2 can be on the basis of preferred embodiment, further in 27 of the semiconductor layers of the MQW 22 of InGaN/GaN and p+-GaN-based, comprise a p-type Bragg mirror (Distributed BraggReflector is called for short DBR) 26; Wherein:
This p-type DBR 26 can be the DBR of p-AlGaN/GaN, and reflectivity (ReflectiveIndex) can be between 50% to 80%;
By this, not only can constitute the vertical component structure of one gallium nitrate based (GaN-based) light-emitting diode, and can constitute a resonant cavity with p-type DBR26 by metallic reflector 31.
See also shown in Figure 8, in the 4th embodiment, this multilayer epitaxial structure 2 can be on the basis of the 3rd embodiment, further on the semiconductor layer 27 of p+-GaN-based, with the grow up metal oxide layer 28 of a suitable thickness and light-permeable of mode of heap of stone brilliant, and as Window layer; Wherein:
This metal oxide layer 28 can be the metal oxide layer of ZnO material or the metal oxide layer of ZnO doping aluminium (Al); Or can be In
xZn
1-xO, Sn
xZn
1-xO, In
xSn
yZn
1-x-yThe metal oxide layer person that material constituted such as O, and 0≤X≤1, and 0≤Y≤1, and 0≤X+Y≤1; Or can be refractive index (refractive index) at least 1.5 metal oxide layer person; Or can be the metal oxide layer person of n type conduction (n-type conduction) or p type conduction (p-type conduction); Or can be the metal oxide layer person who is doped with rare earth element (rare earth-doped), thickness can be at 50 to 50 μ m;
And this p type metal electrode 40 is the upper surface 20 that is arranged at multilayer epitaxial structure 2, promptly on the metal oxide layer 28.
See also shown in Figure 9ly, in the 5th embodiment, " vertical component structure " of the present invention comprises a multilayer epitaxial structure 2, a metallic reflector 31, an electrically-conductive backing plate 33, a p type metal electrode 40, and formation such as a n type metal electrode 50; And this multilayer epitaxial structure 2 can by institutes such as a n-GaN layer 21, the 2nd MQW active layer 23, the 2nd n-GaN layer 24, a MQW active layer 25, a p-type DBR 26, a contact layer 27 in regular turn building crystal to grow form; Wherein:
This n-GaN layer 21 can be doped n-GaN semiconductor layer (for example: doping Si, to reach the purpose of conduction), and thickness can be at 2 to 6 μ m;
The 2nd MQW active layer 23 can be the 2nd-MQW of InGaN/GaN, and second light-generating layer (light generating layer) of serve as reasons after the energising " light generation light ", and wavelength (λ) can be between 550nm to 650nm;
The 2nd n-GaN layer 24 can be doped n-GaN semiconductor layer (for example: doping Si, to reach the purpose of conduction), and thickness can be at 2 to 6 μ m;
The one MQW active layer 25 can be the lst-MQW of InGaN/GaN, and first light-generating layer of serve as reasons after the energising " electricity produces light ", and wavelength (λ) can be between 450nm to 510nm;
This p-type DBR 26 can be the DBR of p-AlGaN/GaN, and reflectivity (ReflectiveIndex) can be between 50% to 80%;
This contact layer 27 is that (thickness can be at 0.2 to 0.5 μ m for p+-GaN-based) semiconductor layer for example: p-GaN, p-InGaN, p-AlInGaN for p-GaN system;
This metallic reflector 31 be semiconductor layer 21 bottoms that are plated on n-GaN in the mode of plating or sputter, and in order to bind electrically-conductive backing plate 33, reflectivity can be more than 90%;
This electrically-conductive backing plate 33 can be Si-n type substrate, and can be doped with phosphorus (P), arsenic V group elements such as (As), or Ge-n type substrate, or GaAs-n type substrate, or InP-n type substrate, or GaP-n type substrate etc., thickness can be between 100 to 300 μ m;
This p type metal electrode 40 is the upper surface 20 that is arranged at multilayer epitaxial structure 2, promptly on the semiconductor layer 27 of p+-GaN-based;
And this n type metal electrode 50 is the bottom 33a that is arranged at electrically-conductive backing plate 33;
By this, not only can constitute the vertical component structure of one gallium nitrate based (GaN-based) light-emitting diode, and can constitute a resonant cavity with p-type DBR 26 by metallic reflector 31, the mixed light process of two MQW active layers 23,25, and can be finished by resonant cavity.
Should give the expositor around here, be to be: in the 5th embodiment, when MQW active layer 25 light wavelength that produces (λ) is about 480nm, and the 2nd MQW active layer 23 light wavelength that produces (λ) is about 580nm, then according to the mixed light principle of chromaticity diagram (Chromaticity diagram), the light of being overflowed by p-type DBR 26 can be the nature white light, and helps the lifting of luminous efficiency; This is a special case person of fifth embodiment of the invention.
See also shown in Figure 10, in the 6th embodiment, this multilayer epitaxial structure 2 can be on the basis of the 5th embodiment, further on the semiconductor layer 27 of p+-GaN-based, with the grow up metal oxide layer 28 of a suitable thickness and light-permeable of mode of heap of stone brilliant, and as Window layer; Wherein:
This metal oxide layer 28 can be the metal oxide layer of ZnO material or the metal oxide layer of ZnO doping aluminium (Al); Or can be In
xZn
1-xO, Sn
xZn
1-xO, In
xSn
yZn
1-x-yThe metal oxide layer person that material constituted such as O, and 0≤X≤1, and 0≤Y≤1, and 0≤X+Y≤1; Or can be refractive index (refractive index) at least 1.5 metal oxide layer person; Or can be the metal oxide layer person of n type conduction (n-type conduction) or p type conduction (p-type conduction); Or can be the metal oxide layer person who is doped with rare earth element (rare earth-doped), thickness can be at 50 to 50 μ m;
And this p type metal electrode 40 is the upper surface 20 that is arranged at multilayer epitaxial structure 2, promptly on the metal oxide layer 28.
Intend proposing the expositor around here, it is to be: metal oxide layer 28 of the present invention, further can bestow surface treatment, and have rough surface or embossing lines, emit with escaping of light of gain in exposed surface (being that metal oxide layer 28 surfaces do not contain the part that contacts with p type metal electrode 40).
In addition, the expositor should be proposed, it is to be: epitaxial structure of the present invention, system can be formed by sputter self (self-texturing by sputtering) method, or can be formed by physical vapour deposition (PVD) (physical vapor deposition) method, or can be formed by ion plating (ionplating) method, or can be formed by pulsed laser evaporation (pulsed laser evaporation) method, or can be formed by chemical vapour deposition (CVD) (chemical vapor deposition) method, or (the molecular beam epitaxy) method of can being grown up by molecular beam epitaxy is formed.
See also Figure 11 to shown in Figure 14, base board unit 1 of the present invention, its preferred implementation is as follows:
As shown in figure 11, lie in and form a GaN resilient coating 11 on sapphire (sapphire) substrate 10, and on GaN resilient coating 11, along GaN crystallization direction (crystal orientation)＜110 〉, with PECVD (plasma enhance chemical vapour deposition) the mode SiO that grows up
2Layer 120, thickness can be at 3 to 5 μ m, and at SiO
2Coating one deck photoresistance liquid (PR) 121 on the layer 120.
As shown in figure 12, this resilient coating 11 can be the resilient coating of LT-GaN/HT-GaN, LT-GaN is the low temperature buffer layer of elder generation's growth on substrate 10, thickness can be at 30 to 500 , and HT-GaN is the high temperature buffer layer of growth on LT-GaN, and thickness can be at 0.5 to 6 μ m.
As shown in figure 13, can make photoresistance liquid (PR) layer 121 form several unexposed shielding 123 by the mode of web plate exposure, and photoresistance liquid (PR) layer 121 part of having exposed, can be removed SiO via etching solution
2Layer 120 is shielded the part of 123 protections, can remove in the lump via etching solution, and form several light shield 12.
As shown in figure 14, remove shielding 123 can the make the present invention in advance base board unit 1 desiring to reach.
Claims (26)
1. the manufacture method of a gallium nitride based LED vertical component structure can comprise following step:
(a) step of growth one resilient coating ties up to and forms a resilient coating on sapphire (sapphire) substrate;
(b) form the step of several light shield, subsequent steps (a) forms several light shield, to make a base board unit in advance on resilient coating;
(c) step of growth multilayer epitaxial structure, subsequent steps (b), the brilliant deposition one of heap of stone that continues on base board unit has the multilayer epitaxial structure of active layer;
(d) step of taking-up multilayer epitaxial structure, subsequent steps (c), base board unit and multilayer epitaxial structure are placed tool, and the upper surface of multilayer epitaxial structure is cemented in the upper mounted plate of tool, the lower surface of substrate is cemented in the bottom plate of tool, when two fixed heads are done the time spent to the base board unit and the multilayer epitaxial structure application of force, but the formed fragile structure point of base board unit factor road light shield and being peeled off smoothly, and take out the multilayer epitaxial structure separately;
(e) step of metallic reflector is set, subsequent steps (d), remove multilayer epitaxial structure bottom remaining light shield, and the bottom of multilayer epitaxial structure ground be minute surface, to plate a metallic reflector;
(f) step of electrically-conductive backing plate is set, subsequent steps (e) with electrically-conductive backing plate and metallic reflector heating and pressurizing, makes electrically-conductive backing plate bind mutually with metallic reflector, and sets firmly electrically-conductive backing plate;
(g) step of P/N electrode is set, subsequent steps (f), separate tool after, the upper surface of multilayer epitaxial structure can be provided with P type electrode, and the bottom of electrically-conductive backing plate can be provided with N type electrode; By this, to constitute the vertical component structure of one gallium nitrate based (GaN-based) LED.
2. " manufacture method of gallium nitride based LED vertical component structure " according to claim 1 is characterized in that this light shield can be SiO
2, or SiN or SiN
xEtc. material; And this method is between step (c) and step (d), can further comprise step with hydrogen fluoride (HF) etching some, be subsequent steps (c), can be earlier with hydrogen fluoride (HF) solvent or B.O.E etchant, to light shield etching some, make structure more fragile, when execution in step (d), be easier to take out the multilayer epitaxial structure in order to follow-up.
3. the manufacture method of gallium nitride based LED vertical component structure according to claim 1 is characterized in that, this electrically-conductive backing plate, further can be coated with a metallic film in the top, via heating and pressurizing, metallic film can bind mutually with metallic reflector, and sets firmly electrically-conductive backing plate; This metallic film can be the material identical with metallic reflector, or can be different with metallic reflector but can with the metallic reflector heating and pressurizing material of binding together.
4. the vertical component structure of a gallium nitride based LED is characterized in that, comprises a multilayer epitaxial structure, a metallic reflector, an electrically-conductive backing plate, a p type metal electrode, and formation such as a n type metal electrode;
This multilayer epitaxial structure, be can by n-GaN layer, MQW active layer, and institute such as contact layer in regular turn building crystal to grow form;
This metallic reflector is the bottom that is plated on the n-GaN semiconductor layer in the mode of plating or sputter, can reflect the light that the multilayer epitaxial structure is produced;
This electrically-conductive backing plate can be Si-n type substrate, and via heating and pressurizing, and is fixedly arranged on the bottom of metallic reflector;
This p type metal electrode is the upper surface that is arranged at the multilayer epitaxial structure;
And this n type metal electrode is the bottom that is arranged at electrically-conductive backing plate; By this, to constitute the vertical component structure of one gallium nitrate based (GaN-based) light-emitting diode.
5. the vertical component structure of gallium nitride based LED according to claim 4 is characterized in that:
This metallic reflector can be and plates the silver Ag/Al material of plated aluminum more earlier, or is the Ag material, or any metal material, and reflectivity can be more than 90%;
This n-GaN layer, (for example: doping Si), thickness can be at 2 to 6 μ m to have can be doped n-GaN semiconductor layer;
This MQW active layer can be the MQW of InGaN/GaN, and the light-generating layer of serve as reasons after the energising " electricity produces light ", and wavelength (λ) can be between 380nm to 600nm;
This contact layer is the semiconductor layer of p+-GaN-based, and for example: the of heap of stone brilliant sedimentary deposit of p-GaN, p-InGaN, p-AlInGaN, thickness can be at 0.2 to 0.5 μ m.
6. the vertical component structure of gallium nitride based LED according to claim 4 is characterized in that, this electrically-conductive backing plate can be doped with phosphorus (P), arsenic V group elements such as (As), and thickness can be between 100 to 300 μ m.
7. the vertical component structure of gallium nitride based LED according to claim 4 is characterized in that, this electrically-conductive backing plate can be Ge-n type substrate, or GaAs-n type substrate, or InP-n type substrate, or GaP-n type substrate etc.
8. the vertical component structure of gallium nitride based LED according to claim 4 is characterized in that, this multilayer epitaxial structure can be further on contact layer, with the grow up metal oxide layer of a suitable thickness and light-permeable of crystal type of heap of stone; And this p type metal electrode is that the upper surface that is arranged at the multilayer epitaxial structure is on the metal oxide layer.
9. the vertical component structure of gallium nitride based LED according to claim 8 is characterized in that, this metal oxide layer can be the metal oxide layer of ZnO material, or the metal oxide layer of ZnO doping aluminium (Al), or In
xZn
1-xO, Sn
xZn
1-xO, In
xSn
yZn
1-x-yThe metal oxide layer of materials such as O, and 0≤X≤1, and 0≤Y≤1, and 0≤X+Y≤1, thickness can be at 50 to 50 μ m.
10. the vertical component structure of gallium nitride based LED according to claim 8, it is characterized in that, this metal oxide layer, can be refractive index at least at 1.5 metal oxide layer, or the metal oxide layer of n type conduction, or the metal oxide layer of p type conduction, or being doped with the metal oxide layer person of rare earth element, thickness can be at 50 to 50 μ m.
11. the vertical component structure of a gallium nitride based LED is characterized in that, comprises a multilayer epitaxial structure, a metallic reflector, an electrically-conductive backing plate, a p type metal electrode, and formation such as a n type metal electrode;
This multilayer epitaxial structure, be can by n-GaN layer, MQW active layer, p-type DBR, and institute such as contact layer in regular turn building crystal to grow form;
This metallic reflector is the bottom that is plated on the n-GaN semiconductor layer in the mode of plating or sputter, can reflect the light that the multilayer epitaxial structure is produced;
This electrically-conductive backing plate can be Si-n type substrate, and via heating and pressurizing, and is fixedly arranged on the bottom of metallic reflector;
This p type metal electrode is the upper surface that is arranged at the multilayer epitaxial structure;
And this n type metal electrode is the bottom that is arranged at electrically-conductive backing plate; By this, constituting the vertical component structure of one gallium nitrate based (GaN-based) light-emitting diode, and can form a resonant cavity by metallic reflector and p-type DBR.
12. the vertical component structure of gallium nitride based LED according to claim 11 is characterized in that:
This metallic reflector can be and plates the silver Ag/Al material of plated aluminum more earlier, or is the Ag material, or any metal material, and reflectivity can be more than 90%;
This n-GaN layer, (for example: doping Si), thickness can be at 2 to 6 μ m to have can be doped n-GaN semiconductor layer;
This MQW active layer can be the MQW of InGaN/GaN, and the light-generating layer of serve as reasons after the energising " electricity produces light ", and wavelength (λ) can be between 380nm to 600nm;
This p-type DBR can be the DBR of p-AlGaN/GaN, and reflectivity can be between 50% to 80%;
This contact layer is the semiconductor layer of p+-GaN-based, and for example: the of heap of stone brilliant sedimentary deposit of p-GaN, p-InGaN, p-AlInGaN, thickness can be at 0.2 to 0.5 μ m.
13. the vertical component structure of gallium nitride based LED according to claim 11 is characterized in that, this electrically-conductive backing plate can be doped with phosphorus (P), arsenic V group elements such as (As), and thickness can be between 100 to 300 μ m.
14. the vertical component structure of gallium nitride based LED according to claim 11 is characterized in that, this electrically-conductive backing plate can be Ge-n type substrate, or GaAs-n type substrate, or InP-n type substrate, or GaP-n type substrate etc.
15. the vertical component structure of gallium nitride based LED according to claim 11 is characterized in that, this multilayer epitaxial structure can be further on contact layer, with the grow up metal oxide layer of a suitable thickness and light-permeable of crystal type of heap of stone; And this p type metal electrode is that the upper surface that is arranged at the multilayer epitaxial structure is on the metal oxide layer.
16. the vertical component structure of gallium nitride based LED according to claim 15 is characterized in that, this metal oxide layer can be the metal oxide layer of ZnO material, or the metal oxide layer of ZnO doping aluminium (Al), or In
xZn
1-xO, Sn
xZn
1-xO, In
xSn
yZn
1-x-yThe metal oxide layer of materials such as O, and 0≤X≤1, and 0≤Y≤1, and 0≤X+Y≤1, thickness can be at 50 to 50 μ m.
17. the vertical component structure of gallium nitride based LED according to claim 15, it is characterized in that, this metal oxide layer, can be refractive index at least at 1.5 metal oxide layer, or the metal oxide layer of n type conduction, or the metal oxide layer of p type conduction, or being doped with the metal oxide layer person of rare earth element, thickness can be at 50 to 50 μ m.
18. the vertical component structure of a gallium nitrate based LE D is characterized in that, comprises a multilayer epitaxial structure, a metallic reflector, an electrically-conductive backing plate, a p type metal electrode, and formation such as a n type metal electrode;
This multilayer epitaxial structure, be can by institutes such as n-GaN layer, the 2nd MQW active layer, the 2nd n-GaN layer, a MQW active layer, p-type DBR, contact layer in regular turn building crystal to grow form;
This metallic reflector is the bottom that is plated on the n-GaN semiconductor layer in the mode of plating or sputter, can reflect the light that the multilayer epitaxial structure is produced;
This electrically-conductive backing plate can be Si-n type substrate, and via heating and pressurizing, and is fixedly arranged on the bottom of metallic reflector;
This p type metal electrode is the upper surface that is arranged at the multilayer epitaxial structure;
And this n type metal electrode is the bottom that is arranged at electrically-conductive backing plate; By this, constituting the vertical component structure of one gallium nitrate based (GaN-based) light-emitting diode, and can form a resonant cavity by metallic reflector and p-type DBR, the mixed light process of a MQW active layer and the 2nd MQW active layer, and can be finished by resonant cavity.
19. the vertical component structure of gallium nitride based LED according to claim 18 is characterized in that:
This metallic reflector can be and plates the silver Ag/Al material of plated aluminum more earlier, or is the Ag material, or any metal material, and reflectivity can be more than 90%;
This n-GaN layer, (for example: doping Si), thickness can be at 2 to 6 μ m to have can be doped n-GaN semiconductor layer;
The 2nd MQW active layer can be the 2nd-MQW of InGaN/GaN, and second light-generating layer of serve as reasons after the energising " light generation light ", and wavelength (λ) can be between 550nm to 650nm;
The 2nd n-GaN layer, (for example: doping Si), thickness can be at 2 to 6 μ m to have can be doped n-GaN semiconductor layer;
The one MQW active layer can be the lst-MQW of InGaN/GaN, and first light-generating layer of serve as reasons after the energising " electricity produces light ", and wavelength (λ) can be between 450nm to 510nm;
This p-type DBR can be the DBR of p-AlGaN/GaN, and reflectivity can be between 50% to 80%;
This contact layer is the semiconductor layer of p+-GaN-based, and for example: the of heap of stone brilliant sedimentary deposit of p-GaN, p-InGaN, p-AlInGaN, thickness can be at 0.2 to 0.5 μ m.
20. the vertical component structure of gallium nitride based LED according to claim 18 is characterized in that, this electrically-conductive backing plate can be doped with phosphorus (P), arsenic V group elements such as (As), and thickness can be between 100 to 300 μ m.
21. the vertical component structure of gallium nitride based LED according to claim 18 is characterized in that, this electrically-conductive backing plate can be Ge-n type substrate, or GaAs-n type substrate, or InP-n type substrate, or GaP-n type substrate etc.
22. the vertical component structure of gallium nitride based LED according to claim 18 is characterized in that, this multilayer epitaxial structure can be further on contact layer, with the grow up metal oxide layer of a suitable thickness and light-permeable of crystal type of heap of stone; And this p type metal electrode is that the upper surface that is arranged at the multilayer epitaxial structure is on the metal oxide layer.
23. the vertical component structure of gallium nitride based LED according to claim 22 is characterized in that, this metal oxide layer can be the metal oxide layer of ZnO material, or the metal oxide layer of ZnO doping aluminium (Al), or In
xZn
1-xO, Sn
xZn
1-xO, In
xSn
yZn
1-x-yThe metal oxide layer of materials such as O, and 0≤X≤1, and 0≤Y≤1, and 0≤X+Y≤1, thickness can be at 50 to 50 μ m.
24. the vertical component structure of gallium nitride based LED according to claim 22, it is characterized in that, this metal oxide layer, can be refractive index at least at 1.5 metal oxide layer, or the metal oxide layer of n type conduction, or the metal oxide layer of p type conduction, or being doped with the metal oxide layer person of rare earth element, thickness can be at 50 to 50 μ m.
25. the manufacture method of a gallium nitride based LED vertical component structure, system is by a base board unit with light shield, the brilliant deposition one of heap of stone that continues has the multilayer epitaxial structure of active layer, make base board unit and multilayer epitaxial structure between, because of light shield forms structural tender spots, in order to taking out the multilayer epitaxial structure, after the multilayer epitaxial structure takes out, can electrically-conductive backing plate be set in multilayer epitaxial structure bottom, and the P/N electrode distinctly is set in the upper surface of multilayer epitaxial structure and electrically-conductive backing plate bottom, and constitute the vertical component structure of one gallium nitrate based (GaN-based) light-emitting diode.
26. the vertical component structure of gallium nitride based LED according to claim 25 is characterized in that, this base board unit, be by a substrate, a resilient coating, and several light shield constituted
This substrate can be sapphire (sapphire) material, and thickness is between 300 to 500 μ m, in order to building crystal to grow one multilayer epitaxial structure;
This resilient coating can be the resilient coating of LT-GaN/HT-GaN, and LT-GaN is the low temperature buffer layer on substrate of growing up earlier, and thickness can be at 30 to 500 , and HT-GaN is the high temperature buffer layer on LT-GaN of growing up, and thickness can be at 0.5 to 6 μ m;
This light shield can be SiO
2, or SiN or SiN
xEtc. material, and be formed on the resilient coating
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031002498A CN1516294A (en) | 2003-01-08 | 2003-01-08 | Vertical component structure of gallium nitride base light-emitting diode and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031002498A CN1516294A (en) | 2003-01-08 | 2003-01-08 | Vertical component structure of gallium nitride base light-emitting diode and its making method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1516294A true CN1516294A (en) | 2004-07-28 |
Family
ID=34238954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA031002498A Pending CN1516294A (en) | 2003-01-08 | 2003-01-08 | Vertical component structure of gallium nitride base light-emitting diode and its making method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1516294A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101996943A (en) * | 2009-08-18 | 2011-03-30 | 展晶科技(深圳)有限公司 | Method for separating material layer |
| CN102064251A (en) * | 2010-11-23 | 2011-05-18 | 吉林大学 | High-power SiC substrate vertical structure light-emitting diode and preparation method thereof |
| CN102064250A (en) * | 2010-11-23 | 2011-05-18 | 吉林大学 | Substrate-glaring SiC substrate vertical structure light-emitting tube and preparation method thereof |
| CN101783279B (en) * | 2009-01-15 | 2011-11-16 | 展晶科技(深圳)有限公司 | Method for spearing two materials |
| CN112629402A (en) * | 2020-12-31 | 2021-04-09 | 厦门市诺盛测控技术有限公司 | Preparation method and template for strain gauge coated with welding spot |
-
2003
- 2003-01-08 CN CNA031002498A patent/CN1516294A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101783279B (en) * | 2009-01-15 | 2011-11-16 | 展晶科技(深圳)有限公司 | Method for spearing two materials |
| CN101996943A (en) * | 2009-08-18 | 2011-03-30 | 展晶科技(深圳)有限公司 | Method for separating material layer |
| CN101996943B (en) * | 2009-08-18 | 2013-12-04 | 展晶科技(深圳)有限公司 | Method for separating material layer |
| CN102064251A (en) * | 2010-11-23 | 2011-05-18 | 吉林大学 | High-power SiC substrate vertical structure light-emitting diode and preparation method thereof |
| CN102064250A (en) * | 2010-11-23 | 2011-05-18 | 吉林大学 | Substrate-glaring SiC substrate vertical structure light-emitting tube and preparation method thereof |
| CN102064250B (en) * | 2010-11-23 | 2012-07-25 | 吉林大学 | Substrate-glaring SiC substrate vertical structure light-emitting tube and preparation method thereof |
| CN102064251B (en) * | 2010-11-23 | 2012-12-05 | 吉林大学 | High-power SiC substrate vertical structure light-emitting diode and preparation method thereof |
| CN112629402A (en) * | 2020-12-31 | 2021-04-09 | 厦门市诺盛测控技术有限公司 | Preparation method and template for strain gauge coated with welding spot |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1941437A (en) | Gallium nitride based semiconductor light emitting diode and method of manufacturing the same | |
| CN1292494C (en) | Radiation-emitting semiconductor element and method for producing same | |
| CN1309099C (en) | Group-III nitride compound semiconductor luminescent element | |
| CN1220286C (en) | Nitride base semiconductor illuminating device and mfg. method thereof | |
| JP5556657B2 (en) | Group III nitride semiconductor light emitting device manufacturing method, group III nitride semiconductor light emitting device, and lamp | |
| JP4970782B2 (en) | Light emitting device including concavo-convex structure and manufacturing method thereof | |
| CN1208849C (en) | Method for mfg. semiconductor luminescent device, and semiconductor luminescent device made thereby | |
| KR101077078B1 (en) | Gallium nitride compound semiconductor light emitting element | |
| CN1206747C (en) | Group III nitride compound semiconductor light emitting device and method for producing same | |
| CN1881631A (en) | Method for manufacturing light emitting diodes | |
| CN1993837A (en) | Positive electrode for semiconductor light-emitting device | |
| CN1841800A (en) | Method of forming a low temperature-grown buffer layer, light emitting element, method of making same, and light emitting device | |
| CN1886827A (en) | Highly efficient gallium nitride based light emitting diodes via surface roughening | |
| CN1870312A (en) | Method of manufacturing light emitting diodes | |
| CN1759491A (en) | Semiconductor light emitting device and manufacturing method thereof | |
| JP2008047861A (en) | Vertical-structure gallium nitride light-emitting diode device and its manufacturing method | |
| CN1950957A (en) | Lift-off process for gan films formed on sic substrates and devices fabricated using the method | |
| CN1471735A (en) | Method for producing a radiation-emitting semiconductor chip based on III-V nitride semiconductor material and a corresponding radiation-emitting semiconductor chip | |
| CN101410992A (en) | GaN semiconductor light emitting element and lamp | |
| CN1881630A (en) | Rod type light emitting device and method for fabricating the same | |
| CN1858921A (en) | Flip chip light emitting diode and method of manufactureing the same | |
| CN1943044A (en) | Production of radiation-emitting semi-conductor chip | |
| CN1510765A (en) | Gallium nitride of group III-V compound semiconductor LED luminating device and manufacture thereof | |
| CN1147010C (en) | Self-passinvating non-planar junction subgroup III nitride semi-conductor device and its making method | |
| CN1933202A (en) | Method for producing a luminescent diode component |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |