CN101872815B - Light-emitting diode structure and element and manufacturing method thereof - Google Patents
Light-emitting diode structure and element and manufacturing method thereof Download PDFInfo
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- CN101872815B CN101872815B CN2009101321456A CN200910132145A CN101872815B CN 101872815 B CN101872815 B CN 101872815B CN 2009101321456 A CN2009101321456 A CN 2009101321456A CN 200910132145 A CN200910132145 A CN 200910132145A CN 101872815 B CN101872815 B CN 101872815B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
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Abstract
The invention discloses light-emitting diode structure and element and a manufacturing method thereof. The light-emitting diode structure is characterized in that a patterned epitaxial layer, a light-emitting structure and the like are formed on a substrate and the patterned epitaxial layer is used as a weakening structure. In the subsequent process, the patterned epitaxial layer can automatically fracture during cooling. The weakening structure comprises a plurality of columnar structures.
Description
Technical field
The present invention relates to a kind of light-emitting diode structure, element and manufacturing approach thereof, and particularly relate to a kind of weakening structure of utilizing and make its light-emitting diode structure of separating, element and manufacturing approach thereof with substrate.
Background technology
(light emitting diode LED) has horizontal and structure such as rectilinear to light-emitting diode on using.Traditional water flat LED element is because his electrode is configured in homonymy, so electric current has the phenomenon of electric current congested (current crowding) in platform (mesa) portion, this will cause dispelling the heat bad, thereby it is big or small to have limited the drive current that LED can carry.High-capacity LED then is to adopt rectilinear structure at present.
Shown in Figure 1A, behind epitaxial substrate 100 growth LED elements 102 and minute surface/adhesion coating 104, utilize the mode of wafer bonding (wafer bonding), with LED element 102, see through the bearing substrate (carrier) 108 that adhesion coating is transferred to conduction.Shown in Figure 1B, epitaxial substrate 100 is removed afterwards.Then, shown in Fig. 1 C, on bearing substrate 108 surfaces of LED element 102 surfaces and its offside, form metal electrode 110 respectively, and become rectilinear structure.Shown in Fig. 1 C, because the vertical electrode configuration, so the distribution of electric current I is preferred; Secondly, bearing substrate 108 generally is the good conductivity and the good material of selecting for use like silicon, copper, aluminium, copper/tungsten etc. that dispels the heat, so can increase the operating efficiency of element.
But; The mode of at present separating epitaxial substrate is just like U.S. Pat 6,071,795 laser lift-off (the laser lift-off that disclosed; LLO); Utilize the interface between KrF laser radiation substrate and the gallium nitride layer in the extension substrate-side, make component interface absorb enough energy after, separate with epitaxial substrate.Perhaps, also can utilize the mode of grinding directly the epitaxial substrate mill to be removed, the mode of perhaps utilizing the wet etching collocation to grind with the substrate wear down a bit, dissolves away residual substrate with etching solution afterwards again.But,, cause damage at element surface easily because the control of laser energy is difficult in the occasion of utilizing the LLO method.For some more frangible substrates like GaAs etc., the mode that then can't be suitable for grinding is handled, and for some harder substrates of material like sapphire, gallium nitride, aluminium nitride etc., then need spend long time to grind.In addition, grind the mode that removes with wet etching more earlier, only be applicable to GaAs or silicon substrate, but gallium nitride, aluminium nitride or sapphire substrate commonly used then have the problem of the difficulty of being suitable for.
Summary of the invention
The present invention proposes a kind of LED structure, element and manufacturing approach thereof, can let the LED element separate from epitaxial substrate.
Implement example according to the present invention, it provides a kind of light emitting diode construction.This light emitting diode construction comprises substrate, patterning epitaxial loayer and ray structure at least.Wherein, ray structure sees through the patterning epitaxial loayer and is formed on the substrate, and the patterning epitaxial loayer comprises a plurality of column structures, can be in the temperature-fall period cleaved.
In addition, implement example according to the present invention, the manufacturing approach that it provides a kind of light-emitting diode may further comprise the steps at least.At first, substrate is provided.On substrate, form the patterning epitaxial loayer, this patterning epitaxial loayer has certain height and is made up of a plurality of column structure.In addition, mask layer is formed on the surface of patterning epitaxial loayer, makes this mask layer be covered in the sidewall of patterning epitaxial loayer at least.Nitride epitaxial layer is formed on the patterning epitaxial loayer.The ray structure layer is formed on the nitride epitaxial layer, to accomplish first structure.Then, the conductivity bearing substrate is provided, the line unit of going forward side by side closes program, and said structure is transferred on the conductivity bearing substrate.Then, with cooling process, the technology that weakens makes the fracture of patterning epitaxial loayer, to form light emitting diode construction, comprise irregular a plurality of column structure, and this mask layer covers its surface.
Enforcement example of the present invention also proposes a kind of light-emitting diode, comprises conduction bearing substrate, ray structure, a plurality of column structure, dielectric layer, first electrode and second electrode.Ray structure is positioned on the conduction bearing substrate.The column weakening structure is positioned on the ray structure.Dielectric layer covers the surface of column structure.First electrode is positioned on the column structure, and second electrode is positioned on the conduction bearing substrate.
In sum,, make it in the temperature-fall period of technology, can let the LED element separate from epitaxial substrate naturally, and needn't utilize because of the difference of the material coefficient of expansion like extra processing steps such as laser lift-offs through weakening structure.In addition, the LED element has the epitaxial loayer of specific thicknesses, and can let the LED element separate naturally from epitaxial substrate, and is unlikely to make the LED element fracture.
For let above-mentioned and other purposes of the present invention, feature and advantage can be more obviously understandable, hereinafter is special lifts preferred embodiment, and conjunction with figs., elaborates as follows.
Description of drawings
Figure 1A to 1C is known luminescence diode structure and shop drawings thereof.
Fig. 2 A to 2M is for implementing the manufacturing sketch map of the LED element that example illustrates according to the present invention.
Description of reference numerals
100: epitaxial substrate
The 102:LED element
104: minute surface/adhesion coating
108: bearing substrate (carrier)
110: metal electrode
200: substrate
202: epitaxial loayer
202a: patterning epitaxial loayer
204: the first mask layers
204a: the first residual mask layer
206: the second mask layers
206a: mask ball layer
210: the three mask layers
210a: the 4th mask layer
212: nitride epitaxial layer
220: the semiconductor stack lamination
222:N type doped gallium nitride layer
224: SQW/multiple quantum trap
226:P type doped gallium nitride layer
230,240: first, second bonded layer
250: the conduction bearing substrate
260: the fracture interface
265: the fracture interface surface
270:P type electrode
280:N type electrode
290: conductive reflective
Embodiment
Fig. 2 A to 2M is for implementing the manufacturing sketch map of the LED element that example illustrates according to the present invention.In the diagram, do not draw according to actual ratio between each layer, it only represents the relative position relation of each interlayer.In addition, implement the material of mentioned each layer of example etc., be merely the usefulness that convenient explanation is understood, tool those of ordinary skill in this technical field can be made the change or the modification of appropriateness.
Shown in Fig. 2 A, at first on substrate 200, form epitaxial loayer 202, first mask layer 204 and second mask layer 206 in regular turn; Wherein to be used for forming the weakening structure of this enforcement example after the epitaxial loayer 202.The material of aforesaid substrate 200 for example is monocrystalline sapphire, gallium nitride, silicon, carborundum, GaAs, gallium phosphide, zinc oxide or magnesia etc., below will make to implement example with sapphire substrate.
In addition, in this enforcement example, epitaxial loayer 202 is to use gallium nitride, and this material is merely the usefulness of explanation, and is non-in order to restriction practical range of the present invention; When using different light emitting diode construction, can change into suitable material.For ease, hereinafter all is called gallium nitride layer 202.In addition, the thickness of above-mentioned gallium nitride layer 202 for example is 0.5-3nm.
In addition, it is material that above-mentioned first mask layer 204 for example is to use silicon dioxide, and its thickness for example is 200nm.It is material that second mask layer 206 for example is to use nickel, and its thickness is about 50-300nm.First mask layer 204 and second mask layer 206 can use as etching mask in subsequent technique.First mask layer 204 and second mask layer, 206 employed materials then can be according to using etch recipe etc. to do suitable adjustment.
Then, shown in Fig. 2 B, said modules is carried out high-temperature technology.This high-temperature technology for example is the about 650-950 of temperature ℃ a tempering process.Through this high-temperature technology, second mask layer 206 on first mask layer 204 can comprise a plurality of mask balls because capillary factor forms mask ball layer 206a.In the present embodiment, this mask ball layer 206a for example is the nickel nanometer mask ball layer with nano-scale; For example between 50-350nm, spacing is for example between 100-350nm for the diameter of each mask ball.The be arranged in random pattern of each mask ball or regular pattern.
Then, shown in Fig. 2 B, 2C, be mask with aforesaid mask ball layer 206a, utilize engraving method, first mask layer 204 is carried out etching with gallium nitride layer 202, till beneath substrate 200 exposes, form the epitaxial loayer 202a of patterning thus.Because this mask ball layer 206a have nano-scale, therefore the etch-rate through the control vertical direction can form the gallium nitride post layer with nano-scale greater than lateral etch rate, thereafter with gallium nitride post layer 202a general designation.With reference to figure 2D, then the residual mask ball 206a and the first mask layer 204a are removed, the method that removes can utilize the conductor etching technology of any pattern to carry out.
Above-mentioned gallium nitride post layer 202a will be as a weakening structure, in order to the carrying out of follow-up reduction technology in follow-up technology; Each post width for example is between the 50-350nm, and spacing for example between 100-350nm, highly is 0.5-3 μ m then.Arrangement can present regular shape, also can be irregular distribution, its by the etching of second mask layer after pattern decision.
Then, shown in Fig. 2 E, on the surface of gallium nitride post layer 202a, compliance deposits the 3rd mask layer 210 (conformal), mainly can be used as the usefulness of the protective layer in the subsequent technique.The material of this 3rd mask layer 210 for example is silicon dioxide (SiO
2), thickness for example is 50-200nm.
With reference to figure 2F, optionally the 3rd mask layer 210 at etching gallium nitride post layer 202a top makes gallium nitride post layer 202a expose top surface 204a partly to form the 4th mask layer 210a.Etching mode can be selected suitable semiconductor technology, makes when etching is carried out, and only removes near the 3rd mask layer 210 of top.
Then, shown in Fig. 2 G, 2H, utilize Metalorganic Chemical Vapor Deposition (MOCVD), with the mode of epitaxial lateral overgrowth, growth one deck nitride epitaxial layer 212 on the surface that gallium nitride post layer 202a exposes.This nitride epitaxial layer 212 for example is the epitaxial layer of gallium nitride that the N type mixes.
In addition; Do not match in order to take into account lattice, between follow-up LED element and the substrate and the follow-up stress factors that causes epitaxial cell to break because of cooling; Above-mentioned nitride epitaxial layer 212 has specific thickness range; 0.5-3 μ m for example can reach that when growing up the unmatched influence of lattice to be dropped to minimum, and unlikely causing broken.
Then, shown in Fig. 2 I, form semiconductor stack lamination 220 on the surface of nitride epitaxial layer 212, it is a kind of stacked configuration, for example is to be formed by first doped layer, luminescent layer and second doped layer.In this enforcement example, this semiconductor stack lamination 220 for example be by N type doped gallium nitride layer 222, SQW (quantum well, QW) or multiple quantum trap (multiple quantum well, MQW) 224 with 226 formations of P type doped gallium nitride layer.
Afterwards, above semiconductor stack lamination 220, form the conductive reflective 290 and first bonded layer 230, to form light emitting diode construction, it is shown in Fig. 2 I left hand view.Likewise with reference to figure 2I, prepare conduction bearing substrate 250 in addition, this conduction bearing substrate 250 for example is to be made up of silicon.The surface of conduction bearing substrate 250 also forms second bonded layer 240.
Then, carry out the wafer bonding step, above-mentioned two works are seen through this first bonded layer 230 be bonded together each other with this second bonded layer 240.Through this bonding step, semiconductor stack lamination 220 and sapphire substrate 200 are transferred on the conduction bearing substrate 250, form the structure A shown in Fig. 2 J, it comprises ray structure A1, gallium nitride post layer 202a and substrate 200.The material of aforesaid first bonded layer 230 and second bonded layer 240 for example is Sillim's alloy (AuSn), gold, and it is except in order to carrying out the wafer bonding, and its reflector and electric conducting material can be selected silver and nickel, platinum, aluminum material.Therefore be not limited to the simple layer material, also visual actual demand forms multilayer, and this is that persons skilled in the art can use its existing knowledge to accomplish, and the above-mentioned explanation that is merely a kind of embodiment is not in order to limit the present invention.
In addition, in above-mentioned fabrication schedule, adhere to different machine station separately, so in board transfer process, can experience temperature-fall period for the first time because form the epitaxial process and the wafer bonding process of semiconductor stack lamination 220.As previously mentioned; The thickness of gallium nitride layer 212 can be resisted because of sapphire substrate 200 thermal expansion coefficient difference with gallium nitride layer 212 and semiconductor stack lamination 220 etc., so the temperature difference can avoid lowering the temperature the time can cause the uneven and splintering problem that causes of stress distribution.
Then, after accomplishing above-mentioned wafer bonding, the structure A shown in Fig. 2 J is carried out the temperature-fall period second time with reference to figure 2K, that is reduction technology of the present invention.This temperature-fall period for example is that the structure A behind the above-mentioned bonding is cooled to ambient temperature gradually, promptly about room temperature.Likewise; Different because of the thermal coefficient of expansion of substrate 200 and bearing substrate 210; So (to connect face is that gold/tin is example by the temperature of carrying out wafer bonding when environment; Temperature is greatly about 350-450 ℃) start from reducing to 28 ℃ in 60 minutes, the stress of storeroom can cause ray structure A1 in structure A between the most weak interface; That is the part 260 between the gallium nitride post layer 202a ruptures naturally, and forming irregular a plurality of column structure, and its sidewall has the covering of the 4th mask layer 210a.
In addition, the plane of disruption at this interface 260 might not be neat face ground fracture, is merely a kind of aspect of the interface of rupturing like the fracture interface surface 265 of Fig. 2 L, not in order to limit the present invention.In addition, this fracture interface surface 265 is formed at the surface of ray structure A1, and the angle of total reflection in the time of therefore can passing through to destroy bright dipping is taken out efficient to improve light.Therefore, the present invention just can reach the effect that makes light-emitting diode separate and reach the increase luminous efficiency from substrate 200 under the situation that does not need additional technique.
At last, form N type electrode 280 in the appropriate location of element surface and form P type electrode 270, shown in Fig. 2 M, to form light-emitting diode B in silicon substrate 250 surfaces.For example, electrode is configurable on the appropriate location of conduction bearing substrate 250 and the break surface of gallium nitride post layer 202a.
The light-emitting diode of this enforcement example is to be that example is explained orally with the gallium nitride material, but also can replace to other suitable luminescent material and epitaxial substrates.For example, can use the GaAs substrate AlGaInP thing (AlGaInP) of growing up, or use silicon substrate to come gallium nitride growth.Therefore, on using, be not confined to gallium nitride material or sapphire substrate.
In sum,, make it in the temperature-fall period of technology, can let ray structure separate from epitaxial substrate naturally, and needn't utilize because of the difference of the material coefficient of expansion like extra processing steps such as laser lift-offs through weakening structure.In addition, ray structure has the epitaxial loayer of specific thicknesses, therefore can resist because of substrate with and the thermal expansion coefficient difference of semiconductor stack lamination etc. the splintering problem that when lowering the temperature, can cause the stress distribution inequality to cause.
Though the present invention discloses as above with preferred embodiment; Yet it is not in order to limit the present invention; Those of ordinary skill in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking appended the claim person of defining.
Claims (14)
1. the manufacturing approach of a light-emitting diode comprises:
Substrate is provided;
Form the patterning epitaxial loayer on this substrate, and this patterning epitaxial loayer is made up of a plurality of column structure;
Form mask layer in the surface of this patterning epitaxial loayer, wherein this mask layer covers the sidewall of this patterning epitaxial loayer at least;
Form nitride epitaxial layer on this patterning epitaxial loayer;
Form the ray structure layer on this nitride epitaxial layer, to accomplish first structure;
The conduction bearing substrate is provided, and the line unit of going forward side by side closes program, and this first structure is transferred on this conduction bearing substrate; And
With cooling process, the technology that weakens makes this patterning epitaxial loayer fracture,
Wherein forming this patterning epitaxial loayer also comprises:
Form epitaxial loayer on this substrate;
Form first mask layer on this epitaxial loayer;
Form second mask layer on this first mask layer;
Carry out high-temperature technology, make this second mask layer form mask ball layer, wherein this mask ball layer comprises a plurality of mask balls; And
With this mask ball layer is mask, removes this first mask of part and this epitaxial loayer, to form this patterning epitaxial loayer.
2. the manufacturing approach of light-emitting diode as claimed in claim 1, wherein the diameter of each the mask ball in this mask ball layer is 50-350nm, and spacing is 100-350nm.
3. the manufacturing approach of light-emitting diode as claimed in claim 1, wherein respectively this column structure thing has certain height, and wherein this certain height is 0.5 to 3 μ m, and width is 50-350nm, and the spacing of each a plurality of column structure thing is 100-350nm.
4. the manufacturing approach of light-emitting diode as claimed in claim 1 wherein forms this mask layer and also comprises:
Compliance ground forms the 3rd mask layer on this patterning epitaxial loayer; And
Remove part the 3rd mask layer at this patterning epitaxial loayer top.
5. the manufacturing approach of light-emitting diode as claimed in claim 1, the thickness of this nitride epitaxial layer is 0.5-3 μ m.
6. the manufacturing approach of light-emitting diode as claimed in claim 1; Wherein forming this ray structure also comprises and forms first doped layer, luminescent layer and second doped layer in regular turn; Wherein these are first different with the conductivity type of this second doped layer, and wherein this luminescent layer is quantum well layer or multiple quantum trap layer.
7. the manufacturing approach of light-emitting diode as claimed in claim 1 also comprises:
Form first bonded layer on this ray structure layer;
Form second bonded layer on this conduction bearing substrate; And
Through this first with this second bonded layer, accomplish this bonding program.
8. the manufacturing approach of light-emitting diode as claimed in claim 1 also comprises forming first and second electrode, and respectively at the surface of this column structure of this conduction bearing substrate and fracture, wherein this first electrode is different with the conductivity type of this second electrode.
9. the manufacturing approach of light-emitting diode as claimed in claim 1 wherein is somebody's turn to do the conduction bearing substrate, and is different with the thermal coefficient of expansion of this patterning epitaxial loayer or this ray structure.
10. a light-emitting diode comprises
The conduction bearing substrate;
Ray structure is positioned on this conduction bearing substrate;
A plurality of column structures are positioned on this ray structure;
Dielectric layer covers the sidewall of this column structure;
First electrode is positioned on this column structure; And
Second electrode is positioned on this conduction bearing substrate.
11. light-emitting diode as claimed in claim 10; Wherein this ray structure also comprises first doped layer, luminescent layer and second doped layer in regular turn; Wherein these are first different with the conductivity type of this second doped layer, and wherein this luminescent layer is quantum well layer or multiple quantum trap layer.
12. light-emitting diode as claimed in claim 10 also comprises bonded layer, is configured between this ray structure and this conduction bearing substrate.
13. light-emitting diode as claimed in claim 10 wherein is somebody's turn to do the conduction bearing substrate, and is different with the thermal coefficient of expansion of this patterning epitaxial loayer or this ray structure.
14. light-emitting diode as claimed in claim 10, wherein this first electrode is different with the conductivity type of this second electrode.
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| WO2022109991A1 (en) * | 2020-11-27 | 2022-06-02 | 苏州晶湛半导体有限公司 | Substrate structure, preparation method therefor, light-emitting device and preparation method therefor |
| CN112864287B (en) * | 2021-01-11 | 2022-04-26 | 深圳市华星光电半导体显示技术有限公司 | Transfer method, micro device array and preparation method thereof |
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| CN1378237A (en) * | 2001-03-27 | 2002-11-06 | 日本电气株式会社 | Semiconductor substrate made from III family nitride |
| CN1790755A (en) * | 2004-12-13 | 2006-06-21 | 新世纪光电股份有限公司 | Method of manufacturing light-emitting device |
| CN1801459A (en) * | 2005-01-03 | 2006-07-12 | 三星电机株式会社 | Method and apparatus for manufacturing gallium nitride based single crystal substrate |
| CN101278411A (en) * | 2005-06-17 | 2008-10-01 | 飞利浦拉米尔德斯照明设备美国有限责任公司 | Grown photonic crystals in semiconductor light emitting devices |
| CN101097855A (en) * | 2006-06-28 | 2008-01-02 | 财团法人工业技术研究院 | Fabrication process of nitride semiconductor substrate and composite material substrate |
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