CN1781192A - Solid-state imaging device, and its manufacturing and driving method - Google Patents

Solid-state imaging device, and its manufacturing and driving method Download PDF

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Publication number
CN1781192A
CN1781192A CN 200480011816 CN200480011816A CN1781192A CN 1781192 A CN1781192 A CN 1781192A CN 200480011816 CN200480011816 CN 200480011816 CN 200480011816 A CN200480011816 A CN 200480011816A CN 1781192 A CN1781192 A CN 1781192A
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screen film
optical screen
image pickup
solid state
state image
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CN100481482C (en
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北野良昭
阿部秀司
黑岩淳
平田清
大木洋昭
唐泽信浩
滝泽律夫
山下满
佐藤充
国分胜则
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Sony Corp
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Sony Corp
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Abstract

A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way. The solid-state imaging device has such a structure that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion 11 constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film 9 formed to cover an image pickup area except the light-receiving sensor portion 11; a second-conductivity-type semiconductor area 6 is formed in the center on the surface of a first-conductivity-type semiconductor area 2 constituting a photo-electric conversion area of the light-receiving sensor portion 11; and areas 10 (10A, 10B) containing a lower impurity concentration than that of the second-conductivity-type semiconductor area 6 is formed on the surface of the first-conductivity-type semiconductor area 2 at the end on the side of the electrode 8 and at the opposite end on the side of a pixel-separation area 3.

Description

Solid state image pickup device and manufacturing and the method that drives it
Technical field
The method that the present invention relates to a kind of solid state image pickup device and manufacture method thereof and drive this solid state image pickup device.Particularly, the present invention relates to a kind of the have solid state image pickup device and the manufacture method thereof of optical screen film and the method that drives this solid state image pickup device.
Background technology
In CCD solid state image pickup device, CMOS type solid state image pickup device etc., used the transducer that is called HAD (hole accumulated layers), its structure comprises P type high-dopant concentration (P for form one on the optical receiving sensor surface +) the district, wherein formed N type doped region.
Figure 16 has shown the schematic section of traditional CCD solid state image pickup device of the described HAD transducer of an employing.
Described CCD solid state image pickup device comprises: on the Semiconductor substrate 151 such as silicon substrate, the N type semiconductor district 152, P type channel stop layer district (picture element isolation region) 153, P type semiconductor well region 154, N type transmission channel region 155 and the P type that form photoelectric conversion region are read grid 162; In addition, on the surface in the N type semiconductor district 152 of described formation photoelectric conversion region, formed P +(P type high-dopant concentration) positive charge build-up district (hole accumulated layers) 156.These N type semiconductor districts 152 and positive charge build-up district (hole accumulated layers) 156 forms optical receiving sensor part 161.
On Semiconductor substrate 151, form a charge transmission electrode 158 by a gate insulating film.
In addition, above charge transmission electrode 158, form an optical screen film 159 with covering charge transmission electrode 158, thereby avoided because light incides 163 pairs of noises that produce of vertical transfer register in the signal charge of transmission by an interlayer dielectric film.
Optical screen film 159 has the opening above optical receiving sensor part 161, so that light can incide on the optical receiving sensor part 161.
P type semiconductor well region 154, N type transmission channel region 155 and the charge transmission electrode above these zones 158 form vertical transfer register 163.Form charge transmission electrode 158 scopes from vertical transfer register 163 to reading grid 162.
Vertical transfer register 163 is arranged at a side that goes up the optical receiving sensor part 161 that is provided with in vertical direction (the vertical direction of paper in Figure 16), and has banded flat shape.A not shown horizontal transport register is connected to an end of described vertical transfer register 163.
In addition, raceway groove stops district's (picture element isolation region) 153 and is formed between the optical receiving sensor part 161 in vertical direction, causes the optical receiving sensor part 161 of each pixel to be isolated thus.
In this way, a plurality of optical receiving sensor part 161 similar arranged and formed described CCD solid state image pickup device (for example seeing the following patent documentation of quoting 1).
In such solid state image pickup device, a single or multiple lift of the charge transmission electrode of being made by polysilicon etc. 158 is formed at usually to be read on grid 162 and the vertical register 163.
The electromotive force of grid 162 is read in control and the electromotive force of vertical register 163 is read vertical register 163 with signal charge from optical receiving sensor part 161 (specifically from its photoelectric conversion region 152), and the signal charge in the transmission vertical register 163.
In this situation, the control raceway groove stops the electromotive force of district's (picture element isolation region) 153 so that described electric charge not in the horizontal direction (i.e. horizontal direction among the figure) read neighbor.
Incident light is converted into signal charge and is stored in photoelectric conversion region (N type semiconductor district) 152.
Yet, constantly reducing Pixel Dimensions in recent years always, make the solid state image pickup device that just makes the traditional structure that adopts doped region possibly can't normally move.
Specifically, along with Pixel Dimensions reduces, channel stop layer (pixel isolation floor) 153, vertical register 163, read the influence that grid 162 and photoelectric conversion region (N type semiconductor district) 152 all are subjected to the bidimensional mudulation effect jointly; Thereby make to become and be difficult to fuzzy (blooming) characteristic of halation, read characteristic, pixel isolation characteristic and noise characteristic and remain on former level.
For example, become narrower if read the width of grid 162, the electromotive force of reading grid 162 just is subjected to the influence of vertical register 163 and photoelectric conversion region 152, makes the electromotive force of reading grid 162 reduce.This causes the deterioration of halation fuzzy behaviour.When the electromotive force that makes photoelectric conversion region 152 is darker when avoiding this shortcoming, must make and read the voltage height, thereby worsen electric charge and read characteristic.
In addition, if for example raceway groove stop the district (picture element isolation region) 153 become narrower, similar to the electromotive force of reading grid 162, its electromotive force is subjected to the influence and the step-down of bidimensional mudulation effect, thereby has worsened the pixel isolation characteristic.
In addition, because along with the reducing to become and be difficult to of photoelectric conversion region 152 sizes, so photoelectric conversion region 152 must be formed more shallowly for retention performance on the quantity of saturation signal; In this situation, the electromotive force step-down in photoelectric conversion region 152 lip-deep positive charge build-up districts (hole charge accumulated layers) 156, this reduces the probability of trapped electron, and electronics is the noise contribution with respect to the hole, thereby causes the increase of noise contribution.
The concentration that P type in increasing positive charge build-up district (hole charge accumulated layers) 156 mixes is when preventing described shortcoming, and the electromotive force of reading grid 162 of neighbor uprises, and has worsened and has read characteristic.Simultaneously, the electromotive force that raceway groove stops district's (picture element isolation region) 153 also uprises, and the electric field that raceway groove stops between district (picture element isolation region) 153 and the vertical register 163 when reading electric charge strengthens, and may increase owing to reasons such as avalanche breakdown make noise contribution.
In order to address the above problem, designed following method, make channel stop layer (picture element isolation region) 153, read grid 162 and positive charge build-up district (hole accumulated layers) 156 electromotive force separately all is variable.For example, cover film 159 by aiming screen and apply a predetermined voltage signal; And for example, when halation fuzzy behaviour, pixel isolation characteristic and noise characteristic worsened, aiming screen covered film 159 and applies a negative voltage signal; When reading characteristic degradation, aiming screen covers film 159 and applies a positive voltage signal; Satisfied halation fuzzy behaviour be can keep thus, characteristic, pixel isolation characteristic and noise characteristic (for example seeing the following patent documentation of quoting 2) read.
(patent documentation 1)
The Japanese patent application No.2002-252342 that announces (the 21st section, Fig. 3)
(patent documentation 2)
The Japanese patent application No.2002-51267 that announces
In addition, in an IT (in the ranks) type solid state image pickup device, in order to limit the purpose of smear (smears), on the whole surface except the photoelectric conversion region opening, formed a metal optical screen film (for example seeing the following patent documentation of quoting 3) of making by aluminium etc.Described optical screen film is typically connected to ground (GND).
(patent documentation 3)
The Japanese patent application No.2001-345437 that announces (the 3-4 page or leaf, Fig. 1)
But, in CCD solid state image pickup device as shown in figure 16, when being designed to aiming screen and covering film 159 and apply voltage signal,, may be difficult to satisfy simultaneously noise characteristic and read characteristic according to the design condition (width, the degree of depth, doping content etc.) of each several part.
This is because form optical screen film 159 at optical receiving sensor part 161 lip-deep P +(projecting) given prominence in 156 tops, positive charge build-up district (hole accumulated layers), to avoid aforesaid incident light on vertical register 163.
Adopt this structure, for example, apply electromotive force that a negative voltage signal improves positive charge build-up district (hole accumulated layers) 156 to increase the probability of trapped electron covering film 159 by aiming screen, electronics is the noise contribution with respect to the hole, thereby improved the situation of noise characteristic, stop the P of district's (picture element isolation region) 153 sides at N type transmission channel region 155 and raceway groove +Between the positive charge build-up district (hole accumulated layers) 156 or at N type semiconductor district 152 and P +Can produce a highfield between the positive charge build-up district (hole accumulated layers) 156, thereby, may take place because a lot of noise components that effects such as avalanche breakdown cause, this causes being difficult to obtain sufficient noise characteristic.
On the other hand, also reading grid 162 sides, existing and to cover film 159 by aiming screen and apply the possibility that negative voltage signal improves the electromotive force of reading grid 162, this causes reading voltage increases, cause obtain to read characteristic insufficient.
In addition, for example,, then improved and read characteristic, but worsened noise characteristic if the P type doping content that comprises in positive charge build-up district (the hole accumulated layers) 156 reduces.
In addition, if reduced the unit picture element size of solid state image pickup device, at the P that forms positive charge build-up district (hole accumulated layers) +During layer, be subjected to the influence of ion injection method and heat treatment method etc., P +Layer can spread under read electrode that forms the Sensor section opening and transmission electrode.This can have a negative impact to sensor characteristics.
For example, as shown in Figure 28, as the P of a Sensor section 214 +Layer 216 is when an electrode 212 times (under electrode 212 read grid 221) diffusion, and the dynamic margin of reading voltage increases and driving voltage reduces.In addition, work as P +Layer 216 is in the horizontal direction at the electrode 212 (transmission electrode 212T) of the vertical register of neighbor side down during diffusion, and the active zone of vertical register reduces and the amount of charge handled by vertical register 231 reduces.
In order to overcome this shortcoming, for forming P +Thereby layer carried out ion at 216 o'clock to be injected and adopts mask etc. that p type impurity is carried out ion to inject situation with the end of avoiding sensor part 214 openings, weaken the locking on Sensor section 214 surfaces and increased dark current, thereby when no incident light, increased defective (so-called white noise).Therefore, expectation forms P +Layer is less than the electrode that is made of read electrode and transmission electrode 212 times, and adjacent with the end of electrode 212; But in fact this is difficult, because p type impurity is diffusible.
In order to address the above problem,, the invention provides a kind of solid state image pickup device and manufacture method thereof that has sufficient noise characteristic and read characteristic by improving noise characteristic in well balanced mode and reading characteristic.
In addition, the invention provides high-quality solid state image pickup device and driving method thereof, and manufacture method, it can improve the white noise of locking to reduce dark current and to reduce the dark time of Sensor section.
Summary of the invention
According to a solid state image pickup device of the present invention, described device comprises: being used for from the electrode of optical receiving sensor part read signal electric charge of optical receiving sensor part one side that constitutes pixel; One forms the optical screen film that covers the image pickup district except that the optical receiving sensor part, and it has been applied predetermined voltage; One is formed at second conductive-type semiconductor area of photoelectric conversion region of the formation optical receiving sensor part at center on the surface of first conductive-type semiconductor area; With one in the district that comprises the doping content lower that the opposed end of the lip-deep picture element isolation region side of the end parts of electrode side and first conductive-type semiconductor area forms than the second conductive-type semiconductor area doping content.
According to a solid state image pickup device of the present invention, comprising: one be arranged on optical receiving sensor part side be used for read from the signal charge of the optical receiving sensor part that constitutes pixel or transmit first electrode of this read signal electric charge; The electricity that is arranged at the optical receiving sensor part side of electrode is independent of another electrode of first electrode, and it has been applied predetermined voltage signal; Second conductive-type semiconductor area that forms in the heart on the first conductive-type semiconductor area surface of the photoelectric conversion region of formation optical receiving sensor part; And the district that comprises the doping content lower that the opposed end of the end of the first electrode side and picture element isolation region side forms on the surface of first conductive-type semiconductor area than the doping content of second conductive-type semiconductor area.
According to a solid state image pickup device of the present invention, comprise: a photoelectric conversion section and that is used for producing according to the light quantity that receives electric charge receives the electric charge sump portion of the electric charge of reading from photoelectric conversion section by read electrode, and wherein photoelectric conversion section comprises: first doped region of first conductivity type and be formed at second doped region of second conductivity type on first doped region and be formed at second doped region and the electric charge sump portion between the 3rd doped region that comprises the doping content lower and the 4th doped region than the doping content of second doped region.
A kind of method of making solid state image pickup device according to the present invention is a kind of method of making described solid state image pickup device, the step that described method comprises is: in a side of optical receiving sensor, provide an electrode to be used to read from the optical receiving sensor that constitutes pixel signal charge partly; Form an optical screen film to cover the image pickup district except the optical receiving sensor part, aiming screen covers film and has applied a voltage signal of being scheduled to; And in the first conductive-type semiconductor area surface that forms optical receiving sensor photoelectric conversion region partly, be formed centrally one second conductive-type semiconductor area; Wherein after forming first conductive-type semiconductor area, second conductive-type semiconductor area is formed at the center on the surface of first conductive-type semiconductor area, forms the district that a doping content is lower than second conductive-type semiconductor area in the end of the lip-deep electrode side of first conductive-type semiconductor area and the opposed end of picture element isolation region side respectively then.
A kind of according to solid state image pickup device of the present invention, it is transmitted in the signal of telecommunication that obtains by opto-electronic conversion in the Sensor section by a charge coupled device, described device comprises an optical screen film, described optical screen film has an opening above Sensor section, the non-photoelectric conversion region of covering sensor part side and be connected to DC power supply or the pulse power.
Method according to driving solid state image pickup device of the present invention is a kind of method that drives described solid state image pickup device, described solid state image pickup device is transmitted in the signal of telecommunication that obtains by opto-electronic conversion in the Sensor section by a charge coupled device, the described this optical screen film that comprises, described optical screen film has an opening above Sensor section, the whole surface of the non-photoelectric conversion region of covering sensor part side; Wherein when reading described solid state image pickup device, described optical screen film is applied direct voltage, or described optical screen film is applied pulse voltage.
A kind of according to solid state image pickup device of the present invention, the described this signal of telecommunication that obtains by opto-electronic conversion in the Sensor section that is transmitted in by a charge coupled device, the described this optical screen film that comprises, described optical screen film has an opening above Sensor section, the non-photoelectric conversion region of covering sensor part side; Wherein optical screen film is connected to DC power supply and Sensor section and has a deviate region that is arranged between the transmission electrode of solid state image pickup device read electrode and neighbor.Perhaps, optical screen film is connected to the pulse power and Sensor section and has a deviate region that is arranged between the transmission electrode of solid state image pickup device read electrode and neighbor.
A kind of method of solid state image pickup device constructed in accordance is a kind of method of making described solid state image pickup device, described device is transmitted in the signal of telecommunication that obtains by opto-electronic conversion in the Sensor section by an electric coupling device, described device comprises an optical screen film, described optical screen film has an opening above Sensor section, the non-photoelectric conversion region of covering sensor part side, and be connected to the DC power supply or the pulse power; Wherein forming the step that the technology of Sensor section comprises is: form a N diffusion layer between the channel stop layer of the charge coupled device of reading grid and neighbor, on n type diffused layer, form a p type diffused layer by ion injection method, make n type diffused layer become deviate region in the channel stop layer side of reading gate electrode side and neighbor.
Description of drawings
Fig. 1 is schematic construction (cross section) figure of solid state image pickup device according to an embodiment of the invention; Fig. 2 A and 2B are used for the artwork of manufacture method of the solid state image pickup device in the key diagram 1; Fig. 3 shows the figure of the method in formation and the self aligned positive charge build-up of optical screen film district; Fig. 4 A to 4C is the figure that shows the another kind of method that forms the positive charge build-up district; Fig. 5 is schematic construction (cross section) figure according to another embodiment of the invention.Fig. 6 A and 6B are the figure of the composition of explanation sidewall; Fig. 7 A and 7B are the figure that explanation forms the method for the wiring that is connected to sidewall; Fig. 8 is the figure that explanation forms the method for the wiring that is connected to sidewall; Fig. 9 is the figure that explanation forms the method for the wiring that is connected to sidewall; Figure 10 is schematic construction (cross section) figure of solid state image pickup device according to still another embodiment of the invention; Figure 11 shows the figure of the other method that forms the positive charge build-up district; Figure 12 is schematic construction (cross section) figure of solid state image pickup device according to still another embodiment of the invention; Figure 13 is along the sectional view of A-A ' line among Figure 12; Figure 14 is along the sectional view of B-B ' line among Figure 12; Figure 15 is along the sectional view of C-C ' line among Figure 12; Figure 16 is the sectional view that adopts the traditional C CD solid state image pickup device of HAD transducer; Figure 17 shows first embodiment according to solid state image pickup device of the present invention and driving method thereof; Figure 17 A is the schematic construction sectional view of the relevant portion of described solid state image pickup device; Figure 17 B is the structure chart of the relevant portion of described solid state image pickup device; Figure 18 shows the figure read the read pulse of clock and to put on the relation between the direct voltage Vdc of optical screen film; Figure 19 shows second embodiment according to solid state image pickup device of the present invention and driving method thereof; Figure 19 A is the schematic construction sectional view of the relevant portion of described solid state image pickup device; Figure 19 B is the structure chart of the relevant portion of described solid state image pickup device; Figure 20 shows the figure read the read pulse of clock and to put on the relation between the pulse voltage Vp of optical screen film; Figure 21 shows the 3rd embodiment according to solid state image pickup device of the present invention and driving method thereof; Figure 21 A is the layout of the relevant portion of described solid state image pickup device; Figure 21 B is the structure chart of the relevant portion of described solid state image pickup device; Figure 22 shows the figure read the read pulse of clock and to put on the relation between the direct voltage Vdc of optical screen film; Figure 23 shows the 4th embodiment according to solid state image pickup device of the present invention and driving method thereof; Figure 23 A is the layout of the relevant portion of described solid state image pickup device; Figure 23 B is the structure chart of the relevant portion of described solid state image pickup device; Figure 24 shows the figure read the read pulse of clock and to put on the relation between the pulse voltage Vp of optical screen film; Figure 25 be show according to solid state image pickup device of the present invention and driving method thereof the schematic construction sectional view of the 5th embodiment; Figure 26 be show according to solid state image pickup device of the present invention and driving method thereof the schematic construction sectional view of the 6th embodiment; Figure 27 A and 27B are the schematic construction sectional views that shows according to the embodiment of the manufacture method of the solid state image pickup device that has a deviate region at Sensor section of the present invention; And Figure 28 is a schematic construction sectional view, is used to the problem that illustrates that traditional solid state image pickup device exists.
Embodiment
The present invention is a solid state image pickup device, wherein provides an electrode to be used to read from the optical receiving sensor that constitutes pixel signal charge partly on a side of optical receiving sensor part; Formed an optical screen film and be used to cover image pickup district except that the optical receiving sensor part, and it has been applied predetermined voltage; In first conductive-type semiconductor area lip-deep, be formed centrally one second conductive-type semiconductor area, first conductive-type semiconductor area forms the photoelectric conversion region of optical receiving sensor part, in the end of electrode side and the district that has formed the lower doping content of the doping content of one to the second conductive-type semiconductor area at the opposed end of the picture element isolation region side on the first conductive-type semiconductor area surface.
Thereby the present invention also have such structure in above solid state image pickup device or with Dc bias or clock pulse or with both as voltage signal.
Thereby also having such structure, the present invention in above-mentioned solid state image pickup device, provide the electric charge transmission part that is used for transmitting the read signal electric charge and this electrode also as the charge transmission electrode of electric charge transmission part in optical receiving sensor part side.
Thereby the present invention also have such structure in above-mentioned solid state image pickup device, form second conductive-type semiconductor area come with the optical receiving sensor part above the opening autoregistration of optical screen film.
According to above-mentioned solid state image pickup device of the present invention, because predetermined voltage signal is applied to optical screen film, produced an auxiliary electric field by optical screen film and reduced the two-dimensional modulation that partly caused by optical receiving sensor, this makes the electromotive force of each part be variable and can revise electromotive force by applying voltage signal.
And, because on the surface of first conductive-type semiconductor area that forms optical receiving sensor photoelectric conversion region partly, in the end of electrode side and the opposed end of picture element isolation region side formed one than in the district of the lower doping content of the doping content of second conductive-type semiconductor area at center, so can revise the degree of depth of electromotive force of the end of optical receiving sensor part surface; And therefore can reduce to read voltage, thereby and can suppress by the electric field that weakens the picture element isolation region side because the noise that avalanche breakdown etc. cause produces in the electrode side.
The present invention is a solid state image pickup device, wherein is used for being arranged on optical receiving sensor part one side that constitutes pixel from first electrode of optical receiving sensor part read signal electric charge or transmission read signal electric charge; Another electrode that provides electricity to be independent of first electrode has applied predetermined voltage signal to it; One second conductive-type semiconductor area is with on the first conductive-type semiconductor area surface that is formed at the photoelectric conversion region that forms the optical receiving sensor part at the center, and the district of the lower doping content of the doping content of one to the second conductive-type semiconductor area is formed at the opposed end of the picture element isolation region side on the end parts of the first electrode side and the first conductive-type semiconductor area surface.
Thereby the present invention also have such structure in above-mentioned solid state image pickup device or with Dc bias or clock pulse or with both as voltage signal.
In above-mentioned solid state image pickup device, provide the electric charge transmission part that is used to transmit the read signal electric charge thereby the present invention also has such structure, and first electrode is the charge transmission electrode in the electric charge transmission part in optical receiving sensor part one side.
Thereby the present invention also has such structure at above-mentioned solid state image pickup device, and second conductive-type semiconductor area in the formation optical receiving sensor part comes the edge autoregistration with another electrode.
Solid state image pickup device according to the invention described above, because predetermined voltage signal is applied to another electrode of the optical receiving sensor part side that is arranged in first electrode, so that another electrode produces the two-dimensional modulation effect of electric field to reduce partly to be caused by optical receiving sensor between first electrode and optical receiving sensor part, thereby can so that the electromotive force of each part be variable and can revise electromotive force by enough voltage signals that applies.
In addition, because on the surface of first conductive-type semiconductor area that forms optical receiving sensor photoelectric conversion region partly, in the formation of the opposed end of the end parts of electrode side and picture element isolation region side one than district in the lower doping content of the doping content of second conductive-type semiconductor area at center, so can revise the potential depth of end on the surface of optical receiving sensor part, thereby thereby can reduce to read voltage and can suppress by the electric field that weakens the picture element isolation region side because the noise that avalanche breakdown etc. cause produces in the electrode side.
The present invention has provided a solid state image pickup device, described device comprises one according to receiving the electric charge gathering region that photoelectric conversion region and that light quantity produces electric charge receives the electric charge of reading from the photoelectric conversion section read electrode, wherein photoelectric conversion section comprises second doped region of second conductivity type that first doped region and of one first conductivity type forms on first doped region, forms the 3rd doped region and the 4th doped region of second conductivity type of the doping content lower than the doping content of second doped region between second doped region and electric charge sump portion.
In addition, thereby the present invention also has such structure and is independent of read electrode has formed a voltage application portion branch in above-mentioned solid state image pickup device, the 3rd doped region is adjacent to second doped region and forms, and the voltage application portion branch is applied to the 3rd doped region in order to control the electromotive force of the 3rd doped region at least with voltage.
Solid state image pickup device according to the invention described above, because being lower than the 3rd doped region and the 4th doped region of second conductivity type of second doped region, doping content is being formed on the photoelectricity transform portion between second doped region and the electric charge gathering region, so can revise the degree of depth of electromotive force on the top of photoelectric conversion section, thereby can reduce to read voltage.
The present invention is a kind of method of making solid state image pickup device, wherein provides an optical receiving sensor part that is used for the read signal electric charge in the optical receiving sensor side that constitutes pixel; Formed an optical screen film and be used for covering image pickup district except the optical receiving sensor part, it has been applied predetermined voltage signal; One form on the surface of first conductive-type semiconductor area of photoelectric conversion region of optical sensor part in be formed centrally one second conductive-type semiconductor area, wherein, after forming first conductive-type semiconductor area, on the surface of first conductive-type semiconductor area in be formed centrally second conductive-type semiconductor area, and on the first conductive-type semiconductor area surface, form the district that a doping content is lower than second conductive-type semiconductor area in the end parts of electrode side and the opposed end of picture element isolation region side.
In addition, thereby the present invention also has such structure in the method for making above-mentioned solid state image pickup device, when forming second conductive-type semiconductor area and doping content respectively and be lower than the district of second conductive-type semiconductor area, respectively the end parts of electrode side and the opposed end of picture element isolation region side have been carried out the ion injection.
In addition, in the present invention, in the method for making above-mentioned solid state image pickup device, after forming first conductive-type semiconductor area, form optical screen film, form an opening on the optical receiving sensor part, second conductive-type semiconductor area forms as the ion injection of mask by using optical screen film.
The method of above-mentioned manufacturing solid state image pickup device according to the present invention, when manufacturing wherein is applied to predetermined voltage signals the solid state image pickup device of optical screen film, by applying voltage signal, after forming first conductive-type semiconductor area on the surface of first conductive-type semiconductor area in be formed centrally second conductive-type semiconductor area, and on the first conductive-type semiconductor area surface, form the district that a doping content is lower than second conductive-type semiconductor area respectively, thereby make that as previously mentioned the electromotive force of each part is variable to revise electromotive force in the end parts of electrode side and the opposed end of picture element isolation region; Thereby can make the potential depth that such solid state image pickup device can be revised the end parts on optical receiving sensor surface partly as previously mentioned, can reduce to read voltage in the electrode side, and can suppress by the electric field that weakens the picture element isolation region side because the noise that avalanche breakdown causes produces.
The present invention is a solid state image pickup device, described solid state image pickup device will transmit by a charge coupled device at the signal of telecommunication that Sensor section obtains by opto-electronic conversion, and comprise that one has the optical screen film of an opening on Sensor section, non-photoelectric conversion region in order to the covering sensor side wherein is connected to DC power supply with optical screen film.
In addition, optical screen film in above-mentioned solid state image pickup device is formed by multilayer thereby the present invention has such structure, wherein first optical screen film in the multilayer has an opening and covers non-photoelectric conversion region and be connected to ground in sensor side on Sensor section, and second optical screen film in the multilayer is formed on the optical screen film below second optical screen film by a dielectric film, open side from first optical screen film is outstanding to Sensor section, and is connected to DC power supply.
According to aforesaid solid state image pickup device of the present invention, can cover film by aiming screen and apply voltage and suppress noise and produce.In addition, because optical screen film is connected to DC power supply, so improved the lip-deep locking of Sensor section (pinning).In addition, by when electric charge shifts, applying negative voltage, the high potential barrier of reading grid (read gate) can be set and can improve fuzzy (blooming) characteristic of halation.
The present invention is a solid state image pickup device, the signal of telecommunication that described device is obtained by opto-electronic conversion in the Sensor section by the charge coupled device transmission, and be included in the optical screen film that an opening and the non-photoelectric conversion region of covering sensor side are arranged on the Sensor section, wherein optical screen film be connected to the pulse power.
In addition, optical screen film in above-mentioned solid state image pickup device is formed by multilayer thereby the present invention has such structure, and wherein first optical screen film in the multilayer has an opening and covers non-photoelectric conversion region and be connected to ground in sensor side on Sensor section; Second optical screen film in the multilayer is formed on the optical screen film under second optical screen film by a dielectric film, and the open side from first optical screen film is projected into Sensor section, and is connected to the pulse power.
In addition, thereby the present invention also has such structure in above-mentioned solid state image pickup device, and second optical screen film is formed at the read electrode side.
According to above-mentioned solid state image pickup device of the present invention, can cover film by aiming screen and apply voltage and suppress noise and produce.And, because optical screen film is connected to the pulse power, thus can to optical screen film apply one with the synchronous pulse of read pulse to help read operation and to reduce to read voltage.
The present invention is a kind of driving method of solid state image pickup device, the signal of telecommunication that described method is obtained in Sensor section by opto-electronic conversion by charge coupled device transmission; Described solid state image pickup device comprises an optical screen film, and described optical screen film has opening and covers non-photoelectric conversion region in the Sensor section side above Sensor section; Wherein, aiming screen covers film and applies direct voltage when reading solid state image pickup device.
In addition, in the present invention, in the method that drives solid state image pickup device, optical screen film is made of multilayer, and wherein first optical screen film in the multilayer has an opening on Sensor section, covers non-photoelectric conversion region and is connected to ground in the Sensor section side; Second optical screen film in the multilayer is formed on the optical screen film below second optical screen film by a dielectric film, is projected into Sensor section from the open side of first optical screen film, and DC power supply is applied to second optical screen film.
The said method of above-mentioned driving solid state image pickup device according to the present invention covers film by aiming screen and applies voltage and can suppress noise and produce.In addition, because aiming screen covers film and has applied direct voltage when reading solid state image pickup device, so improved the lip-deep locking of Sensor section.In addition, by when electric charge shifts, applying negative voltage, the high potential barrier of reading grid can be set and can improve the halation fuzzy behaviour.
The present invention is a kind of method that drives solid state image pickup device, the signal of telecommunication that described method is obtained at Sensor section by opto-electronic conversion by charge coupled device transmission, described device comprises that one has opening and covers the optical screen film of non-photoelectric conversion region in the Sensor section side on Sensor section, and wherein aiming screen covers film and applied pulse voltage when reading solid state image pickup device.
In addition, in the present invention, in the method that drives solid state image pickup device, optical screen film is formed by multilayer, and wherein first optical screen film in the multilayer has an opening on Sensor section, covers non-photoelectric conversion region and is connected to ground in the Sensor section side; Second optical screen film in the multilayer is formed on the optical screen film by a dielectric film below second optical screen film, is projected into Sensor section from the open side of first optical screen film, and the pulse power is applied to second optical screen film.
In addition, thereby the present invention has such structure in the method that drives solid state image pickup device, and second optical screen film is formed at the read electrode side.
The driving method of above-mentioned solid state image pickup device according to the present invention covers film by aiming screen and applies voltage and can suppress noise and produce.In addition, because aiming screen covers film and has applied pulse voltage when reading solid state image pickup device, so can help read operation and reduce to read voltage.
The present invention is a kind of solid state image pickup device, the signal of telecommunication that described device is obtained at Sensor section by opto-electronic conversion by charge coupled device transmission, described device comprises that one has opening and covers the optical screen film of non-photoelectric conversion region in Sensor section one side on Sensor section, wherein optical screen film be connected to DC power supply and Sensor section have be arranged in the solid state image pickup device read grid and and the channel stop layer of neighbor between a deviate region.
In addition, thereby the present invention has such structure in above-mentioned solid state image pickup device, optical screen film is formed by multilayer, and wherein first optical screen film in the multilayer has an opening and covers non-photoelectric conversion region in sensor side on Sensor section, and is connected to ground; Second optical screen film in the multilayer is formed on the optical screen film below second optical screen film by a dielectric film, is projected into Sensor section from the open side of first optical screen film, and is connected to DC power supply.
According to above-mentioned solid state image pickup device, because Sensor section in solid state image pickup device read grid and and the channel stop layer of neighbor between have a deviate region, so the p type layer of Sensor section can be to not reading gate diffusions, thereby read voltage and can be suppressed lowly and the dynamic margin of driving voltage can be broadened.Because p type layer not in the horizontal direction (to channel stop layer) be diffused under the transmission electrode of the vertical register of neighbor side, so the amount of charge that can guarantee the active zone of vertical register and can guarantee to handle by vertical register.In addition, covering film by aiming screen applies voltage and can suppress noise and produce.In addition, because optical screen film is connected to DC power supply, so can improve the lip-deep locking of Sensor section.In addition, by when electric charge shifts, applying negative voltage, high reading gate barrier and improve the halation fuzzy behaviour can be set.
The present invention is a kind of solid state image pickup device, the signal of telecommunication that described device obtains at Sensor section by opto-electronic conversion by charge coupled device transmission, described device comprises that one has opening and covers the optical screen film of non-photoelectric conversion region in the Sensor section side on Sensor section, wherein aiming screen cover film applied pulse voltage and Sensor section have solid state image pickup device read grid and and the channel stop layer of neighbor between the deviate region that is provided with.
In addition, thereby the present invention has such structure in above-mentioned solid state image pickup device, optical screen film is formed by multilayer, and wherein first optical screen film in the multilayer has an opening and covers non-photoelectric conversion region in sensor side on Sensor section, and is connected to ground; Second optical screen film in the multilayer is formed on the optical screen film below second optical screen film by a dielectric film, is projected into Sensor section from the open side of first optical screen film, and is connected to the pulse power.
Thereby the present invention also has such structure in above-mentioned solid state image pickup device, and second light shielding layer is formed at the read electrode side.
According to above-mentioned solid state image pickup device of the present invention, because Sensor section solid state image pickup device read grid and and the channel stop layer of neighbor between have a deviate region, so the p type layer of Sensor section can be to not reading gate diffusions, thereby read voltage and can be suppressed lowly and the dynamic margin of driving voltage can be broadened.Because p type layer not in the horizontal direction (to channel stop layer) be diffused under the transmission electrode of vertical register of neighbor side, so the amount of charge that can guarantee the active zone of vertical register and can guarantee to handle by vertical register.In addition, cover the film making alive by aiming screen and can suppress the noise generation.Also have, because optical screen film is connected to the pulse power, so can apply the pulse synchronous with read pulse, it helps read operation and reduces to read voltage.
The present invention is a kind of manufacture method of solid state image pickup device, the signal of telecommunication that described device transmission is obtained in Sensor section by opto-electronic conversion, described device comprises that one has opening and covers the optical screen film of non-photoelectric conversion region in the Sensor section side on Sensor section, and is connected to DC power supply; The processing step that wherein forms Sensor section comprises: form n type diffusion layer between the channel stop layer of the charge coupled device of reading grid and neighbor; On n type diffusion layer, form p type diffusion layer by ion injection method, make the deviate region of n type diffusion layer in the channel stop layer side of reading gate electrode side and neighbor.
In addition, in the present invention, in the method for making solid state image pickup device, form optical screen film, thereby passing through a dielectric film after the Sensor section side forms first optical screen film that covers non-photoelectric conversion region, form an opening in first optical screen film above Sensor section, on first optical screen film, form the second outstanding optical screen film of a side direction Sensor section of the opening from first optical screen film then by a dielectric film.
The method of solid state image pickup device constructed in accordance, because p type diffusion layer forms on n type diffusion layer by ion injection method, at the deviate region of the channel stop layer side manufacturing n type diffusion layer of reading gate electrode side and neighbor, so to isolate the state formation p type diffusion layer of deviate region from reading grid and neighbor channel stop layer.Therefore, the p type layer of Sensor section can be to reading grid direction diffusion, can be suppressed lowly and the dynamic margin of driving voltage has obtained broadening so read voltage.In addition because p type diffusion layer not in the horizontal direction (to channel stop layer) be diffused under the transmission electrode of vertical register of neighbor side, so the amount of charge that can guarantee the active zone of vertical register and guarantee to handle by vertical register.In addition, cover the film making alive by aiming screen and can suppress the noise generation.In addition, because optical screen film is connected to DC power supply, so improved the lip-deep locking of Sensor section.In addition, by applying negative voltage when the charge transfer, high reading gate barrier and improve the halation fuzzy behaviour can be set.
The present invention is a kind of manufacture method of solid state image pickup device, the signal of telecommunication that described device transmission is obtained in Sensor section by opto-electronic conversion, describedly comprise that one has opening and covers the optical screen film of non-photoelectric conversion region in the Sensor section side on Sensor section, and be connected to the pulse power; The processing step that wherein forms Sensor section comprises: form n type diffusion layer between the channel stop layer of the charge coupled device of reading grid and neighbor, on n type diffusion layer, form p type diffusion layer by ion injection method, make the deviate region of n type diffusion layer in the channel stop layer side of reading gate electrode side and neighbor.
In addition, in the present invention, in the method for making solid state image pickup device, thereby form optical screen film after the Sensor section side forms first optical screen film that covers non-photoelectric conversion region by a dielectric film, form an opening in first optical screen film above Sensor section, on first optical screen film, form second optical screen film of giving prominence to Sensor section from the open side of first optical screen film by a dielectric film then.
In addition, thereby the present invention has such structure in the method that drives solid state image pickup device, and second optical screen film is formed at the read electrode side.
Method according to above-mentioned manufacturing solid state image pickup device, because on n type diffusion layer, form p type diffusion layer by ion injection method, at the deviate region of the channel stop layer side manufacturing n type diffusion layer of reading gate electrode side and neighbor, so to isolate the state formation p type diffusion layer of deviate region from reading grid and neighbor channel stop layer.Therefore, the p type layer of Sensor section can be to reading grid direction diffusion, can be suppressed lowly and the dynamic margin of driving voltage has obtained broadening so read voltage.In addition because p type diffusion layer not in the horizontal direction (to channel stop layer) be diffused under the transmission electrode of vertical register of neighbor side, so the amount of charge that can guarantee the active zone of vertical register and guarantee to handle by vertical register.In addition, covering film by aiming screen applies voltage and can suppress noise and produce.In addition, because optical screen film is connected to the pulse power, apply the pulse synchronous with read pulse so can aiming screen cover film, its helps read operation also to reduce to read voltage.
Fig. 1 has shown the schematic construction of a solid state image pickup device (cross section) figure according to an embodiment of the invention.In this embodiment, the present invention is applied to a CCD solid state image pickup device.
The following formation of this solid state image pickup device: on such as the Semiconductor substrate 1 of silicon substrate, form one first conductive-type semiconductor area, for example form the N type semiconductor district 2 of photoelectric conversion region; One second conductive-type semiconductor, for example P type raceway groove stop district's (picture element isolation region) 3; P type semiconductor well region 4; First conductive-type semiconductor, for example N type transmission channel region 5; And second conductive-type semiconductor, for example P type are read grid part 12; In addition, in the N type semiconductor district 2 that forms photoelectric conversion region, form second conductive-type semiconductor, for example P type positive charge build-up district (hole accumulated layers).These N type semiconductor districts 2 and positive charge build-up district (hole accumulated layers) form an optical receiving sensor part 11.
On Semiconductor substrate 1, formed charge transmission electrode 8 by a gate insulating film.In addition, having formed optical screen film 9 above charge transmission electrode 8 to cover charge transmission electrode 8 by an interlayer dielectric film.Optical screen film 9 avoids light to enter transmission channel region 5 etc., and avoids the noise that causes under the signal charge transmission.
Optical screen film 9 has an opening above optical receiving sensor part 11, so that light can enter optical receiving sensor part 11.
P type semiconductor well region 4, N type transmission channel region 5 and charge transmission electrode thereon 8 form vertical transfer register 13.Charge transmission electrode 8 is formed at from vertical transfer register 13 to reading on the grid part 12.
Vertical transfer register 13 is arranged in vertical direction (perpendicular to the direction of Fig. 1 paper) and goes up a side of the optical receiving sensor part 11 that is provided with and have the writing board shape that is similar to band.One horizontal transport register is connected to an end of vertical transfer register 13, although not shown.
In addition, raceway groove stops district (pixel separation district) 3 and is similarly constructed between the optical receiving sensor part 11 that is provided with in vertical direction, and the optical receiving sensor part 11 of each pixel is separated from each other thus.
Like this, some optical receiving sensor parts 11 are set up and are similar to matrix and have formed solid state image pickup device.
If necessary, a colour filter, the device of the lenticule on the chip etc. forms above optical screen film 9.
Designing this embodiment makes voltage V can be applied to optical screen film 9.
Voltage V as for being applied on the optical screen film 9 may be thought of as pulse voltage, fixed bias voltage etc.; Can apply positive potential, earth potential or negative potential according to desirable characteristics.
Note, voltage V is applied to each optical screen film 9, because in fact each optical screen film 9 is interconnected to together, so they only need be connected to the wiring at the periphery in image pickup district although Fig. 1 schematically shows.
In addition, in the solid state image pickup device according to this embodiment, a lip-deep positive charge build-up district (hole accumulated layers) that forms optical receiving sensor part 11 is particularly by comprising high-dopant concentration (P at the center +) positive charge build-up district (hole accumulated layers) 6 and reading near the grid part 12 and near raceway groove stops district's (picture element isolation region) 3, all to contain low doping concentration (P -) positive charge build-up district (hole accumulated layers) 10 make.
If reduce the P type doping content in whole positive charge build-up district simply, then improved and read characteristic, but noise characteristic can worsen as mentioned above.
In contrast, by reduce read near the grid part 12 and near the P type doping content in the positive charge build-up district raceway groove stops district's (picture element isolation region) 3 to make positive charge build-up district 10 be low doping concentration (P -), can improve and read characteristic and noise characteristic.
The P type doping content of reading near the positive charge build-up district 10 (10A) of grid 12 is reduced to the degree that can obtain to reduce to read voltage effects.
By doing like this, the electromotive force of reading grid part 12 becomes and does not allow to be subject to the influence of positive charge build-up district 6,10 (10A), thereby has improved and read characteristic.
In addition, thereby apply the electromotive force that voltage V has fixed the positive charge build-up district 10 (10A) on approaching surface because cover film 9 by aiming screen, noise characteristic can not worsen.
In addition, by reducing to stop near the P type doping content in the positive charge build-up district of district (picture element isolation region) 3 so that positive charge build-up district 10 (10B) is low doping concentration (P at raceway groove -), stop district's (picture element isolation region) 3 from raceway groove and weakened when the read signal electric charge to the electric field of vertical transfer register 8, by avalanche breakdown etc. cause the generation of noise component obtained inhibition.
Note, although also have charge transmission electrode 8 and raceway groove to stop district's (picture element isolation region) 3 in vertical direction between the neighbor, not shown (among Fig. 1 forward facing position and position) backward, but because these parts do not provide electric charge transmission part (vertical transfer register 13), so little by the characteristic degradation that potential change produced of bidimensional modulation effects.Therefore, the positive charge build-up district 10 of (the hole accumulated layers) of low doping concentration does not need always to be formed in vertical direction the raceway groove between the adjacent pixels and stops on district's (pixel separation district) side.
As mentioned above, can use a bias voltage of fixing or a pulse voltage as the voltage V that is applied on the optical screen film 9.
When in fact with a fixed-bias transistor circuit when being applied to voltage on the optical screen film 9, three kinds of feasible modes are arranged, promptly always be fixed on the situation of earth potential (ground level), always be fixed on+electromotive force the situation of (positive potential) and always be fixed on-situation of electromotive force (negative potential).
Always be fixed on the situation of earth potential (ground level), when potential fluctuation influences around positive charge build-up district 6,10 for example is subjected to, because optical screen film 9 is fixed on earth potential, so can suppress the influence of this potential fluctuation and the deterioration of limit noise.
Always be fixed on-electromotive force the situation of (negative potential), can expecting further to reduce noise.In this situation, though since optical screen film 9 be fixed on-electromotive force causes that reading voltage worsen to take place, because reduced to read near the P type doping content in grid part 12 positive charge build-up districts 10 (10A) as mentioned above, so can avoid reading the deterioration of voltage.In addition,,, raceway groove also has been reduced, so electric field is weakened and the noise generation has obtained inhibition because stopping near the P type doping content in positive charge build-up district 10 (10B), district's (picture element isolation region) for the noise that stops district's (picture element isolation region) 3 from raceway groove.
In addition, always be fixed on+situation of electromotive force,, reading voltage so expection further improves because reduced to read near the P type doping content in positive charge build-up districts 10 (10A) grid part 12; Yet, because optical screen film 9 is fixed on+electromotive force may cause noise penalty, so will be increased in the P type doping content that the center comprises the positive charge build-up district 6 of high-dopant concentration on the contrary for fear of noise penalty.Because noise characteristic and to read characteristic relation each other be trade-off relation, so in order to obtain the characteristic of these two satisfactions simultaneously, the P type doping content in the positive charge build-up district 6 that comprises high-dopant concentration is optimized.Stopping from raceway groove distinguishing the noise characteristic of (picture element isolation region) 3 and reading that similar relation is also arranged between the characteristic.
Below, when a pulse voltage is applied to optical screen film 9 as voltage V is actual, may by when gathering electric charge, be fixed on-electromotive force or earth potential change to when reading electric charge then+mode of electromotive force, reads characteristic and noise characteristic thereby improve simultaneously.
In this situation, though the potential change in positive charge build-up district 6,10, because the duration of pulse is very short, it is extremely low to suppose to produce probability of noise for above-mentioned reasons.
Solid state image pickup device according to this embodiment can for example following manufacturing.
On Semiconductor substrate 1, formed a N type semiconductor district 2 respectively, P type semiconductor well region 4, the N type transmits channel region 5, reads the P of grid part 12 -With raceway groove stop the district (picture element isolation region) 3 P +
In addition, the near surface in N type semiconductor district 2 has formed a low doping concentration (P -) P type positive charge build-up district 10.
Next, on Semiconductor substrate 1, formed the electrode layer of a formation charge transmission electrode 8 by a dielectric film; This electrode layer stands composition reservation above reading grid part 12 and transmission channel region 5 and forms charge transmission electrode 8 (seeing Fig. 2 A).
Subsequently, use mask 21 to cover P-positive charge build-up district, except that the centre of surface in N type semiconductor district 2, and carry out the ion injection 22 that the P type mixes then, make the center comprise high-dopant concentration (P such as resist +), come in the surface in N type semiconductor district 2, to be formed centrally and comprise high-dopant concentration (P +) P type positive charge build-up district (hole accumulated layers) 6 (seeing Fig. 2 B).In this situation,, kept the low doping concentration in positive charge build-up district 10 because the surface in N type semiconductor district 2 (its end parts) all covered mask 21 except the center.
Next, remove mask 21 and form an interlayer dielectric film, form optical screen film 9 thereon.
Then, if desired, above optical screen film 9, form an insulating barrier, after planarization should the surface, form lenticule on colour filter, the chip etc.
In this way, can make as shown in Figure 1 solid state image pickup device according to present embodiment.
Note, except shown in Fig. 2 B, comprising high-dopant concentration (P by using mask 21 to form +) P type positive charge build-up district 6 outside, can also be as shown in Figure 3 after forming optical screen film 9, thereby inject and form P type positive charge build-up district 6 by using optical screen film 9 to carry out ion as mask.In this way, can form the edge of opening 9A autoregistration of the P type positive charge build-up district 6 that comprises high-dopant concentration and optical screen film 9.
In this situation, low doping concentration (P -) positive charge build-up district 10 raceway groove that also can be held between in vertical direction the neighbor stop district's (picture element isolation region) side.
In addition, shown in Fig. 2 B, except shown in Fig. 2 B, comprising high-dopant concentration (P by using mask 21 to form +) P type positive charge build-up district 6 outside, can also inject by the ion on the opposed end direction of electrode direction and picture element isolation region respectively and form high-dopant concentration (P respectively +) P type positive charge build-up district (hole accumulated layers) 6 and the positive charge build-up district 10 of low doping concentration, shown in Fig. 4 A to Fig. 4 C.
Particularly, the ion injection 25 of P type doping stops district's (picture element isolation region) 3 from the state (state identical with Fig. 2 A) of Fig. 4 A towards the raceway groove shown in Fig. 4 B obliquely.In this situation, the mask that charge transmission electrode 8 injects as ion.
By doing like this, in the surface of N type semiconductor district (photoelectric conversion region) 2, center and end parts that raceway groove stops district's (picture element isolation region) 3 sides will comprise the higher concentration that the P type mixes, thereby with P -District 10 changes into p type island region 26.But the end parts of charge transmission electrode 8 sides remains P -District 10.
In addition, shown in Fig. 4 C, the ion that the P type mixes injects 27 to carry out towards charge transmission electrode 8 obliquely.In this situation, the mask that charge transmission electrode 8 also injects as ion.
By doing like this, in the surface of N type semiconductor district (photoelectric conversion region) 2, charge transmission electrode 8 side centers and end parts will comprise the higher concentration that the P type mixes, thereby the end parts of charge transmission electrode 8 sides is changed into p type island region 28 by P-district 10, and P+ district 29 is changed into from p type island region 26 in this center, and raceway groove stops the end parts maintenance p type island region 26 of district's (picture element isolation region) 3 sides.
Therefore, in the surface of N type semiconductor district (photoelectric conversion region) 2, this center is the P that comprises high-dopant concentration +District 29 is divided into comprising in the end that the end parts of charge transmission electrode 8 sides and raceway groove stop district's (picture element isolation region) 3 sides and compares P +The low p type island region 28 of doping content in district 29.
According to the foregoing description, because the voltage V that is applied on the optical screen film 9 stops district's (picture element isolation region) 3, reads to cause an auxiliary electric field in grid part 12 and the positive charge build-up district 6,10 at raceway groove, so can reduce two-dimensional modulation effect by generation such as N type semiconductor district (photoelectric conversion region) 2 grades, and thereby make raceway groove stop the district (picture element isolation region) 3, the potential depth of reading grid part 12 and positive charge build-up district 6,10 is variable.
In addition, change on the surface of optical receiving sensor part 11 positive charge build-up district 6,10 doping content in the horizontal direction come in be formed centrally high-dopant concentration (P +) positive charge build-up district 6 and form low doping concentration (P reading the end parts that grid part 12 sides and raceway groove stop district's (picture element isolation region) 3 sides -) the situation in positive charge build-up district 10 (10A, 10B), the potential depth of each part can reasonably be revised.
Therefore, can guarantee well all halation fuzzy behaviours, read characteristic, pixel isolation characteristic and noise characteristic.
Even this makes that miniaturization and its quantity increase still can obtain satisfied noise characteristic and read characteristic pixel dimensionally.And therefore, by using solid state image pickup device according to this embodiment, can the miniaturization camera etc. and can obtain high-resolution and high image quality.
Note, if at low doping concentration (P -) positive charge build-up district (hole accumulated layers) 10 and high-dopant concentration (P +) positive charge build-up district (hole accumulated layers) 6 between only have the difference of a small amount of P type doping content, just can access above-mentioned effect and result.
In addition, in the above-described embodiments, optical screen film 9 is made into monomer and has applied identical voltage thereon.But optical screen film can comprise separate optical screen film on for example a plurality of electrical properties, and each optical screen film is applied different voltage.
Although voltage V is applied on the optical screen film in the above-described embodiments, the conduction sidewall of a close charge transmission electrode also can be provided and this sidewall is applied voltage to obtain same effect.
The embodiment of this situation is as described below.
Fig. 5 has shown the schematic construction of solid state image pickup device (cross section) sketch in accordance with another embodiment of the present invention.
Specifically provide the conduction sidewall 15 (15A, 15B) on charge transmission electrode 8 next doors according to the solid state image pickup device of this embodiment, and so be arranged so that can be with voltage VA, VB is applied to sidewall 15 (15A, 15B).Voltage VA is applied to the sidewall 15A that reads grid part 12 sides of charge transmission electrode 8, and voltage VB is applied to the sidewall 15B that raceway groove stops to distinguish 3 sides.
These sidewalls 15A and 15B insulate by a dielectric film and charge transmission electrode 8, and are set to electricity independence each other, so that can apply voltage VA and VB respectively.
Form that optical screen film 9 covers charge transmission electrode 8 and at its side walls 15A, 15B.
Notice that in this embodiment, voltage is not applied to optical screen film 9.
Then, similar to previous embodiment, the end parts on the surface of Sensor section forms low doping concentration (P near sidewall 15A and 15B -) P type positive charge build-up district (hole accumulated layers) 10 (10A, 10B).
Other structure is identical with the previous embodiment solid state image pickup device of basis as shown in Figure 1, gives identical symbol to the description that repeats so later on.
For the voltage VA and the VB that are applied on sidewall 15A and the 15B, can apply and the above-mentioned identical voltage V of voltage that is applied on the optical screen film 9, for example a fixed bias voltage or a pulse voltage.
In addition, set the voltage VA apply and VB so that can access satisfied characteristic and the satisfied noise characteristic of reading.
For example, select for use the fixed bias voltage of scope to be applied to as voltage VA on the sidewall 15A that reads grid part 12 sides, to obtain the satisfied characteristic of reading from earth potential (zero potential) to negative potential.On the other hand, select for use the fixed bias voltage of a negative potential to be applied to raceway groove and stop to distinguish on the sidewall 15B of 3 sides, be used for locking (pinning) peripheral electromotive force to weaken electric field strength as voltage VB.
Above-mentioned conduction sidewall 15 (15A, 15B) can followingly form.
At first, after forming charge transmission electrode 8, form dielectric film in its surface.
Then, on whole surface deposition one conducting film and this conducting film carried out in erosion with the formation sidewall.
Then, by composition, shown in Fig. 6 B, form sidewall (dash area among Fig. 6 A) 15 around optical receiving sensor part 11, sidewall 15A and the raceway groove of reading grid part 12 sides stop to distinguish the sidewall 15B of 3 sides in electrical isolation.Note, in Fig. 6 A and Fig. 6 B, do not show the dielectric film between charge transmission electrode 8 (8A, 8B) and sidewall 15A and the 15B, and do not show the space between charge transmission electrode 8 and sidewall 15A, the 15B.
Can form sidewall 15A and 15B in this way.
In addition, after forming sidewall 15A and 15B, form dielectric film and cover this surface, pass this dielectric film then and form contact hole.
Like this, wiring layer and sidewall 15A, 15B can be interconnected by this contact hole.
In this connects, if this companys touches the hole and directly is formed on sidewall 15A and the 15B in Fig. 6 B, then because of the narrower in width of sidewall, so be difficult to form contact hole.
Then, when forming sidewall, the partially conductive film is stayed on the charge transmission electrode, formed contact hole then in the conducting film on staying charge transmission electrode and be used for being connected with wiring layer by interior erosion.
Particularly, for example shown in Fig. 7 A, when forming sidewall, conducting film 15 is stayed on the charge transmission electrode 8 of part, in this situation, on the part of the charge transmission electrode 8A of lower level by interior erosion.For example, carry out interior erosion under the state that can cover with mask in the part of the conducting film 15 that stays.
Then, shown in Fig. 7 B, composition sidewall 15 is isolated in the sidewall 15B that the sidewall 15A that reads grid part 12 sides and raceway groove stop to distinguish 3 sides with electricity.
Then, although not shown, at sidewall 15A, the last deposition of 15B interlayer dielectric at charge transmission electrode 8 upper side wall 15A, forms contact hole on the interlayer dielectric directly over the 15B then.
This contact hole is filled to form contact portion 16A and 16B with conductive layer, and it is connected with 17B with wiring 17A.
In this way, can form the electrode that drives sidewall 15A and 15B.
Note, when sidewall 15 not when reading grid part 12 sides and raceway groove and stop to distinguish 3 sides electricity and isolate, for example shown in Figure 9, contact portion 16 be formed at stay by near the center of the conducting film 15 on the charge transmission electrode 8 of Fig. 7 A condition and this contact portion 16 17 be connected with wiring.
According to this embodiment, because voltage VA and VB can be applied on the conduction sidewall 15 (15A, 15B) that is arranged on charge transmission electrode 8 next doors, and and then low doping concentration (P -) P type positive charge build-up district 10 (10A, 10B) be formed near the end parts on optical receiving sensor part 11 surfaces the sidewall 15, similar to previous embodiment, can suppress to read the rising of voltage and the noise that produces by the electric field that stops to distinguish 3 near raceway groove.
Therefore can obtain satisfied characteristic and the noise characteristic of reading simultaneously.
In addition, owing to can access satisfied noise characteristic and read characteristic, even pixel miniaturization and its quantity dimensionally increases,, can make miniaturization such as camera and can obtain high-resolution and high image quality by adopting solid state image pickup device according to present embodiment.
In addition, this embodiment can have the top portion and the high-dopant concentration (P that can make its sidewall 15 (15A, 15B) +) positive charge build-up district 6 self aligned structures.
Then, Figure 10 has shown figure between the schematic construction (cross section) of another embodiment of the present invention, and it has the improved form of structure as shown in Figure 5.
This embodiment has one and is formed at the sidewall 15A that reads grid part 12 sides, and it specifically extends to reads grid part 12 tops.Thereby charge transmission electrode 8 is formed at vertical transfer register 13 places.
Because other structure is same as shown in Figure 5, given identical symbol to the description that repeats.
With the structural similarity among Fig. 5, this embodiment also can suppress to read the rising of voltage and the noise that is produced by the electric field near channel stop layer 3, thereby can obtain satisfied characteristic and the noise characteristic of reading simultaneously.
Note, in this embodiment, also extend to and read grid part 12 because form the sidewall 15A that reads grid part 12 sides, may be different so be applied to the optimum value of the voltage VA on the sidewall 15A with the optimum value of the voltage VA of previous embodiment shown in Fig. 5 A.
In this situation, also can make the top portion and the high-dopant concentration (P of its sidewall 15 (15A, 15B) +) 6 autoregistrations of positive charge build-up district.
In Fig. 5 or the foregoing description shown in Figure 10, for the sidewall 15 that is arranged on charge transmission electrode 8 next doors (15A, 15B), distinguish the electric mutually isolation of sidewall 15B of 3 sides and they are applied different voltage respectively with stopping at raceway groove at the sidewall 15A that reads grid part 12 sides.
The present invention is not limited only to these structures.For example, such structure is possible, and what promptly do not show connects these sidewalls in front or in the back, and is electrically connected (for example, to not carrying out the situation of composition on the state shown in Fig. 6 A).In this situation, be applied to the structural similarity of optical screen film with voltage, stop to distinguish side with raceway groove and applied identical voltage reading the grid part side.
Also have, above-mentioned as Fig. 5 or each embodiment shown in Figure 10 in, further aiming screen covers film 9 and applies voltage V.In this situation,, can optimize the control of electromotive force in the each several part effectively by adjusting each voltage VA, VB and V.
In each the foregoing description, stop to form low doping concentration (P near district's (picture element isolation region) with raceway groove near the grid part 12 optical receiving sensor part 11 lip-deep reading -) positive charge build-up district 10, but, in the present invention, be not limited to the P type near near the semiconductor region of reading the grid part on the surface of optical receiving sensor part and raceway groove stops to form district's (picture element isolation region), promptly with on the optical receiving sensor surface partly comprise high-dopant concentration (P at the center +) the identical conduction type in positive charge build-up district.
For example, can adopt almost pure or with the core (P that comprises high-dopant concentration +) opposite conduction type (N -Or N) semiconductor region.Under any circumstance, all must adopt one to comprise than center (P +) semiconductor region that doping content is lower.
When this district was made for the N type, this formation method was possible, and is promptly for example shown in Figure 11, after forming N type semiconductor district 2, uses the mask with narrow opening to come only to injecting the P type doping (P of high concentration near the center on the surface +).When adopting this formation method, because P +Be easy to be diffused into the N side, consider range of scatter, preferably make the opening of mask 30 quite little.
Described the above embodiment that wherein the present invention is applied to the CCD solid state image pickup device, but the present invention can also be applied to have the solid state image pickup device of other structure.
In addition, for example in the CMOS solid state image pickup device, have such situation, wherein P+ positive charge build-up district is arranged on the surface, N type semiconductor district that forms optical receiving sensor photoelectric conversion region partly to form the HAD transducer.
The present invention can also be applied to use the CMOS type solid state image pickup device of HAD transducer, particularly, provide the conduction sidewall for the grid that is used for read holding wire from the electric charge of optical receiving sensor part, and this sidewall has been applied a voltage, near the surface of the optical receiving sensor sidewall part be a doping content than optical receiving sensor part surface on the lower semiconductor region in center, therefore can improve noise characteristic effectively and read characteristic.
This situation is as described below.
Figure 12 has shown schematic construction (plane) sketch according to the solid state image pickup device of different embodiment of the present invention.In this embodiment, the present invention is applied to CMOS type solid state image pickup device.Figure 13 has shown the sectional view that is intercepted along A-A ' line among Figure 12.Figure 14, Figure 15 have shown the sectional view that is intercepted along B-B ' line, C-C ' among Figure 12 respectively.
This solid state image pickup device has such structure, has promptly formed one first conductivity type in P type semiconductor district 101, for example forms the N type semiconductor district 102 of photoelectric conversion region; One second conductivity type, for example P type raceway groove stop to distinguish 103; One stops to distinguish the picture element isolation region of being made by thick dielectric layer 104 on 103 at raceway groove; Distinguish FD (diffusion of the floating) part of making 112 with one by the first conductivity type doped region, for example N+; In addition, on the surface in the N type semiconductor district 102 that forms photoelectric conversion region, form second conductivity type, for example P type positive charge build-up district (hole accumulated layers) 109.These N type semiconductor districts 102 and positive charge build-up district (hole accumulated layers) 109 constituted optical receiving sensor part 111.
In P type semiconductor district 101, form electric charge read electrode 105 by a gate insulating film.
In addition, form conduction sidewall 106 in electric charge read electrode 105 both sides by thin dielectric membrane 107.Note, in the plane graph of Figure 12, do not show dielectric film 107.Thereby design conduction sidewall 106 can apply one thereon and be independent of the voltage of reading voltage that is applied on the electric charge read electrode.
Electric charge read electrode 105 is arranged between optical receiving sensor part 111 and the FD part 112, and is formed on the picture element isolation region 104 of optical receiving sensor part 111 and FD part 112 outsides.Contact portion 108 is formed at the position of picture element isolation region 104 tops shown in the lower part of Figure 12.
Reference numeral 113 indications are used for the resilient coating of sidewall contact, and can for example form by adopting with electric charge read electrode 105 identical materials and with 105 while of electric charge read electrode composition.In the figure, the contact portion between 114 indication sidewalls 116 and the wiring, 121 indication electric charge read electrodes; 122 indications are used for the wiring of sidewall 106.
In this way, by contact portion is connected with sidewall 106 with electric charge read electrode 105 respectively with wiring, can drive electric charge read electrode 105 and sidewall 106 respectively.
In addition, although not shown,, can avoid light to enter electric charge read electrode 105 following raceway groove, FD part 112 and other district by forming other the regional optical screen film that covers except that optical receiving sensor part 111.
In this embodiment, the lip-deep positive charge build-up district (hole accumulated layers) of optical receiving sensor part 111 is by the high-dopant concentration (P at the center +) positive charge build-up district (hole accumulated layers) 109 and at the low doping concentration (P of the end parts of electric charge read electrode 105 (with sidewall 106) side -) positive charge build-up district (hole accumulated layers) 110 form.
This structure makes to improve simultaneously reads characteristic and noise characteristic, and this is similar to the situation that the invention described above is applied to the CCD solid state image pickup device.
In addition, in this embodiment, can form low doping concentration (P in picture element isolation region 104 sides -) the positive charge build-up district.
Solid state image pickup device according to this embodiment can for example following manufacturing.
After each that stop to distinguish 103 at picture element isolation region 104, raceway groove, optical receiving sensor part 111, FD part 112, electric charge read electrode 105 contacts resilient coating 113 with sidewall forms, on electric charge read electrode 105 and resilient coating 113 surfaces, form thin dielectric membrane 107.
Then, deposition one conducting film on whole surface carries out interior erosion to form sidewall 106 on electric charge read electrode 105 and resilient coating 113 side walls to this conducting film.
Subsequently, on electric charge read electrode 105, resilient coating 113 and sidewall 106 surfaces, form a dielectric film 115, and then at the thick interlayer dielectric 116 of whole surface coverage one.
Then, bore a contact hole in the interlayer dielectric on electric charge read electrode 105, and in contact hole, form a conductive layer to form contact portion 108.This contact portion 108 is connected with wiring 121.
Subsequently, after whole surface covers with interlayer dielectric 117, pass interlayer dielectric film 117 and lower part interlayer dielectric 116 brills one contact hole, contact resilient coating 113 with two sidewalls that sidewall 106 forms simultaneously to extend to the electric charge read electrode 105 that forms around resilient coating.After this, in contact hole, form a conductive layer to form contact portion 114.This contact portion 114 is connected with wiring 122.
In addition, although 2 lip-deep centers, N type semiconductor district have all formed a P+ positive charge build-up district 6 in each the foregoing description, but the conduction type of photoelectric conversion region is not limited in the present invention, and is formed centrally a N type high-dopant concentration district in can be on the surface in P type semiconductor district to form the optical receiving sensor part.
In other words, in the present invention, on the surface of first conductive-type semiconductor of the photoelectric conversion region that forms the optical receiving sensor part in be formed centrally second a conductivity type district that comprises high-dopant concentration, but the end parts on the surface forms a district lower than the doping content at center.The voltage that can select to be applied to optical screen film or conduction sidewall corresponding to the conduction type of optical receiving sensor part is for just or for bearing etc.
In addition, though the conduction sidewall all is formed at the charge transmission electrode both sides in Fig. 5 and each embodiment shown in Figure 10, but the present invention is not limited in the foregoing description, can followingly make: for example read the gate electrode both sides other electrode of being made by thick conducting film is provided at the first electrode both sides, charge transmission electrode both sides or the electric charge of a CMOS type solid state image pickup device, similar to charge transmission electrode or gate electrode, the feasible voltage that is independent of the voltage of charge transmission electrode or gate electrode just can be applied on other electrode and their electromotive force can obtain adjusting.
Specific embodiment of various details, this embodiment relate to the structure of solid state image pickup device with the optical screen film that is connected with the DC power supply or the pulse power and wherein when read operation aiming screen cover the method that film applies the driving solid state image pickup device of direct voltage or pulse voltage.
With reference to Figure 17 description first embodiment according to solid state image pickup device of the present invention and driving method thereof.Figure 17 A is the schematic construction sectional view of a demonstration solid state image pickup device relevant portion, and 17B is the structure chart of solid state image pickup device relevant portion.Notice that although solid state image pickup device comprises a large amount of pixels, Figure 17 only shows that a pixel is as representative.
Shown in Figure 17 A, the solid state image pickup device 71 among this embodiment has the electrode 32 that is used as read electrode and transmission electrode simultaneously, and it is formed on the semi-conductive substrate 31 by a dielectric film 33.One reads grid 40 is formed on the Semiconductor substrate 31 under the part as the electrode 32 of read electrode.One vertical register of being made by charge coupled device 39 is formed on the Semiconductor substrate 31 under the part as the electrode 32 of transmission electrode.In addition, Sensor section 34 is formed between another electrode 32 of electrode 32 and neighbor.This Sensor section wherein, for example forms a n type diffusion layer 35 in order to form pn knot with a p type diffusion layer that forms 36 thereon by constituting such as HAD.In other words, a p type diffusion layer is formed at Sensor section 34 face side.In addition, channel stop layer 37 is formed between Sensor section 34 and the neighbor district.Thereby,, be by channel stop layer 37, vertical register 39, read the tactic of grid 40 and Sensor section 34 when the horizontal transport direction is seen a pixel.
In addition, forming provides the optical screen film 41 of opening on Sensor section, by the dielectric film 38 of a coated electrode 32, Sensor section 34 etc.
Shown in Figure 17 B, this optical screen film 41 forms and is connected to a direct current power supply 51 by for example tungsten.This DC power supply 51 for example comprises one and is used to the power supply 52 of direct voltage is provided and be used for voltage transitions to the transformer 53 that needs voltage.Sensor section 34 in the solid state image pickup device 71 that covers with optical screen film 41 is converted to the signal of telecommunication by the light that opto-electronic conversion will receive, and receives one and read clock this signal is delivered to a driving/transmission grid 61.This driving/transmission grid 61 receives a vertical transfer clock with at the vertical direction transmission signals.In addition, this driving/transmission grid 61 receives and reads clock to provide instruction for applying direct voltage to optical screen film 41.
In solid state image pickup device 71 according to this embodiment, as shown in figure 18, when the read pulse that obtains to read in the clock, make the direct voltage Vdc of a clock that is applied to optical screen film become out state based on read pulse, being used for will be for example,-0.1V is to-10V, be preferably-0.5V is applied to optical screen film 41 to the direct voltage Vdc of-5V.If direct voltage Vdc is less than-0.1V, just both applied direct voltage Vdc, the locking on the surface of Sensor section also can not get enough raisings.As direct voltage Vdc during, cause the problem of the voltage-impedance of solid state image pickup device 71 bodies probably greater than-10V.Therefore, direct voltage Vdc is set in the above-mentioned limit value.
Can cover film 41 by aiming screen according to the solid state image pickup device 71 of this embodiment applies a voltage and suppresses noise and produce.In addition, because this optical screen film 41 is connected to DC power supply 51, so improved the locking on Sensor section 34 surfaces.In addition, by applying a negative voltage when the charge transfer, the high potential barrier of reading grid 40 can be set and can improve the halation fuzzy behaviour.
Below, with reference to Figure 19 description solid state image pickup device and driving method thereof according to a second embodiment of the present invention.Figure 19 A is the schematic construction sectional view of a demonstration solid state image pickup device relevant portion, and 19B is the structure diagram of solid state image pickup device relevant portion.Notice that although solid state image pickup device comprises a large amount of pixels, Figure 19 only shows that an about pixel is as representative.
Shown in Figure 19 A, the solid state image pickup device 72 among this embodiment has one simultaneously as the electrode 32 of read electrode and transmission electrode, and it is formed on the semi-conductive substrate 31 by a dielectric film 33.One reads grid 40 is formed on the Semiconductor substrate 31 under the part as the electrode 32 of read electrode.Vertical register 39 of being made by charge coupled device is formed on the Semiconductor substrate 31 under the part as the electrode 32 of transmission electrode.In addition, Sensor section 34 is formed between another electrode 32 of electrode 32 and neighbor.This Sensor section is by constituting such as HAD, and for example forms a n type diffusion layer 35 to form pn knot with a p type diffusion layer that forms 36 thereon.In other words, a p type diffusion layer is formed at Sensor section 34 face side.In addition, channel stop layer 37 is formed between Sensor section and the neighbor district.Thereby,, be by channel stop layer 37, vertical register 39, read the tactic of grid 40 and Sensor section 34 when the horizontal transport direction is seen a pixel.
In addition, form and to have the optical screen film 41 of opening on Sensor section, the dielectric film 38 by a coated electrode 32, Sensor section 34 etc. forms.
Shown in Figure 19 B, this optical screen film 41 is made of for example tungsten and is connected to a pulse power 55.This pulse power 55 comprises one and is used to provide the AC power 56 of alternating voltage and pulses switch is arrived the impulse regulator 57 of the pulse of required voltage.Sensor section 34 in the solid state image pickup device 72 that covers with optical screen film 41 is converted to the signal of telecommunication by the light that opto-electronic conversion will receive, and receives one and read clock to transfer the signal to a driving/transmission grid 61.This driving/transmission grid 61 receives a vertical transfer clock to transmit this signal in vertical direction.In addition, this driving/transmission grid 61 receives and reads clock to provide instruction for applying pulse voltage to optical screen film 41.
In solid state image pickup device 72 according to this embodiment, as shown in figure 20, when the read pulse that obtains to read in the clock, make the pulse voltage Vp of a clock that is applied to optical screen film become out state based on read pulse, being used for will be for example, 0.1V to 15V, the pulse voltage Vp that is preferably 0.5V to 5V is applied to optical screen film 41.If pulse voltage Vp is less than 0.1V, just both applied pulse voltage Vp, read operation also can not get enough help and needs height to read voltage.As pulse voltage Vp during, cause the problem of the voltage-impedance of solid state image pickup device 72 bodies probably greater than 15V.Therefore, pulse voltage Vp is set in the above-mentioned limit value.
In addition, pulse voltage Vp can apply with direct voltage Vdc.For example, after applying direct voltage Vdc, superimposed pulse voltage Vp thereon.In this situation, the effect that can obtain to apply the effect of direct voltage simultaneously and apply pulse voltage.
Can cover film 41 by aiming screen according to solid state image pickup device 72 of the present invention applies voltage and suppresses noise and produce.In addition, because optical screen film 41 is connected to the pulse power 55, therefore can aiming screen covers film 41 and apply a pulse synchronous, thereby can help read operation and reduce to read voltage with read pulse.
Below, the solid state image pickup device and the driving method thereof of a third embodiment in accordance with the invention are described with reference to Figure 21.Figure 21 A is the schematic construction sectional view of a demonstration solid state image pickup device relevant portion, and 21B is the structure diagram of solid state image pickup device relevant portion.In the 3rd embodiment, the structure according to the optical screen film of the solid state image pickup device of first embodiment is revised.The structure of other of described device identical with reference to shown in the figure 17A.Notice that although described solid state image pickup device comprises a large amount of pixels, Figure 21 has only shown that an about pixel is as representative.
Shown in Figure 21 A, the solid state image pickup device 73 among this embodiment has an optical screen film 41 that is formed by multilayer (exemplifying to two-layer) here.First optical screen film 411 has the opening above Sensor section 34, and covers non-photoelectric conversion region and be connected to ground GND in the sensor side of solid state image pickup device 73.Second optical screen film 412 is formed on first optical screen film 411 under second optical screen film 412, by a dielectric film (not shown), outstanding from opening 42 sides (for example reading grid 40 sides) of first optical screen film 411 to Sensor section 34, and be connected to DC power supply (not shown).Second optical screen film 412 preferably is formed at reads grid 40 sides.
Shown in Figure 21 B, first optical screen film 411 is formed by for example tungsten, and has a opening above Sensor section 34, and covers the whole surface of non-photoelectric conversion region in Sensor section 34 sides, and is connected to ground GND.First optical screen film 412 is formed by for example tungsten, and is connected to DC power supply 51.DC power supply 51 comprises one, and to be used to provide that the power supply 52 of voltage and one is used for voltage transitions be the transformer of required voltage.Sensor section 34 in the solid state image pickup device 73 is converted to the signal of telecommunication by the light that opto-electronic conversion will receive, and receives one and read clock to transfer the signal to a driving/transmission grid 61.This driving/transmission grid 61 receives a vertical transfer clock to transmit this signal in vertical direction.In addition, this driving/transmission grid 61 receives and reads clock to provide instruction for applying direct voltage to optical screen film 41.
In solid state image pickup device 73 according to this embodiment, as shown in figure 22, after the read pulse that obtains to read in the clock, make the direct voltage Vdc of a clock that is applied to optical screen film become out state based on read pulse, being used for will be for example,-0.1V is to-10V, be preferably-0.5V is applied to optical screen film (second optical screen film) to the direct voltage Vdc of-5V.If direct voltage Vdc is less than-0.1V, just both applied direct voltage Vdc, the locking on the surface of Sensor section also can not get enough raisings.As direct voltage Vdc during, cause the problem of the voltage-impedance of solid state image pickup device 73 bodies probably greater than-10V.Therefore, direct voltage Vdc is set in the above-mentioned limit value.
Can cover film 412 by aiming screen according to the solid state image pickup device 73 of this embodiment applies a voltage and suppresses noise and produce.In addition, because second optical screen film 412 is connected to DC power supply 51, so improved Sensor section 34 lip-deep lockings.In addition, by applying a negative voltage when the charge transfer, the high potential barrier of reading grid 40 can be set and can improve the halation fuzzy behaviour.
Next, the solid state image pickup device and the driving method thereof of a fourth embodiment in accordance with the invention are described with reference to Figure 23.Figure 23 A is the schematic construction sectional view that shows the solid state image pickup device relevant portion, and 23B is the structure diagram of solid state image pickup device relevant portion.In the 4th embodiment, the structure of optical screen film is different from the structure according to the optical screen film of the solid state image pickup device of second embodiment.Other structure identical with reference to shown in the figure 19A.Notice that although described solid state image pickup device comprises a large amount of pixels, Figure 23 has only shown that an about pixel is as representative.
Shown in Figure 23 A, the solid state image pickup device 74 among this embodiment has the optical screen film 41 that is formed by multilayer (exemplifying to two-layer) here.First optical screen film 411 has the opening above Sensor section 34, and the sensor side in solid state image pickup device 74 covers non-photoelectric conversion region and is connected to ground GND.Second optical screen film 412 is formed on first optical screen film 411 under second optical screen film 412, by a dielectric film (not shown), outstanding from opening 42 sides (for example reading grid 40 sides) of first optical screen film 411 to Sensor section 34, and be connected to the pulse power (not shown).Second optical screen film 412 preferably is formed at reads grid 40 sides.
Shown in Figure 23 B, first optical screen film 411 is formed by for example tungsten, and has a opening above Sensor section 34, and covers the whole surface of non-photoelectric conversion region in Sensor section 34 sides, and is connected to ground GND.First optical screen film 412 is formed by for example tungsten, and is connected to the pulse power 55.The pulse power 55 comprises one, and to be used to provide that the AC power 56 of alternating voltage and one is used for pulses switch be the impulse regulator of the pulse of required voltage.Sensor section 34 in the solid state image pickup device 74 is converted to the signal of telecommunication by the light that opto-electronic conversion will receive, and receives one and read clock to transfer the signal to a driving/transmission grid 61.This driving/transmission grid 61 receives a vertical transfer clock to transmit this signal in vertical direction.In addition, this driving/transmission grid 61 receives and reads clock to provide instruction for applying pulse voltage to optical screen film 41.
In solid state image pickup device 74 according to this embodiment, as shown in figure 24, when the read pulse that obtains to read in the clock, make the pulse voltage Vp of a clock that is applied to optical screen film become out state based on read pulse, being used for will be for example, 0.1V to 15V, the pulse voltage Vp that is preferably 0.5V to 5V is applied to optical screen film 41.If pulse voltage Vp is less than 0.1V, just both applied pulse voltage Vp, read operation also can not get enough help and needs height to read voltage.As pulse voltage Vp during, cause the problem of the voltage-impedance of solid state image pickup device 72 bodies probably greater than 15V.Therefore, pulse voltage Vp is set in the above-mentioned limit value.
Can cover film 412 by aiming screen according to the solid state image pickup device 74 of this embodiment applies a voltage and suppresses noise and produce.In addition, because second optical screen film 412 is connected to the pulse power 55, applies a pulse synchronous so can aiming screen cover film 41, thereby can help read operation and reduce to read voltage with read pulse.Therefore, second optical screen film 412 that applies pulse voltage specifically is arranged on electrode 32 sides of reading grid 40 tops, it is enough promptly reading on the grid 32.
Pulse voltage can apply with direct voltage.For example, after applying direct voltage, superimposed pulse voltage thereon.In this situation, the effect that can obtain to apply the effect of direct voltage simultaneously and apply pulse voltage.
Below, with reference to schematic construction sketch description solid state image pickup device and the driving method thereof according to a fifth embodiment of the invention of Figure 25.
As shown in figure 25, have similar to above-mentioned third and fourth embodiment one by the two-layer optical screen film that forms 41 according to the solid state image pickup device 75 of this embodiment.Optical screen film 41 is connected to power supply 59, so that first optical screen film 411 is applied direct voltage and second optical screen film 412 is applied pulse voltage.In other words, power supply 59 is made by the unit of independent generation direct voltage and pulse voltage.Driving method among this embodiment is the combination of each operation of third and fourth embodiment.
Below, with reference to the schematic construction sketch of Figure 26 solid state image pickup device and driving method thereof according to the sixth embodiment of the present invention are described.
As shown in figure 26, the solid state image pickup device 76 among this embodiment has one simultaneously as the electrode 32 of read electrode and transmission electrode, is formed on the semi-conductive substrate 31 by a dielectric film 33.One reads grid 40 is formed on the Semiconductor substrate 31 under the part as the electrode 32 of read electrode.One vertical register of being made by charge coupled device 39 is formed on the Semiconductor substrate 31 under the part as the electrode 32 of transmission electrode.In addition, a Sensor section 34 is formed between another electrode 32 of electrode 32 and neighbor.This Sensor section 34 is for example forming a n type diffusion layer 35 to make pn knot with a p type diffusion layer that forms 36 thereon by constituting such as HAD.In addition, channel stop layer 37 is formed between Sensor section and the neighbor district.Thereby, when seeing a pixel from horizontal direction, be by channel stop layer 37, vertical register 39, read the tactic of grid 40 and Sensor section 34.
Form p type diffusion layer 36 to read grid 40 sides and channel stop layer 37 sides have stayed n type diffusion layer 35.Each the n type diffusion layer that stays all is used as deviate region 77.
In addition, be formed on the optical screen film 41 that Sensor section 34 tops have opening 42, by the dielectric film 38 of a coated electrode 32, Sensor section 34 etc..
This optical screen film 41 can have the structure of above-mentioned from first to the 5th embodiment.In other words, as described in first embodiment, optical screen film can be connected to the DC power supply for direct voltage.Or as described in second embodiment, optical screen film can be connected to the pulse power that pulse voltage is provided.Or as described in the 3rd embodiment, can adopt the optical screen film that forms by multilayer, wherein first optical screen film in the multilayer has opening above Sensor section, described first optical screen film covers the non-photoelectric conversion region of Sensor section side in the solid state image pickup device and is connected to ground, and second optical screen film in the multilayer is formed on first optical screen film under second optical screen film by a dielectric film, outstanding from the open side of first optical screen film to Sensor section, and be connected to DC power supply.Or as described in the 4th embodiment, can adopt the optical screen film that forms by multilayer, wherein first optical screen film in the multilayer has opening above Sensor section, described first optical screen film covers the non-photoelectric conversion region of Sensor section side in the solid state image pickup device and is connected to ground, second optical screen film in the multilayer is formed on first optical screen film under second optical screen film by a dielectric film, outstanding from the open side of first optical screen film to Sensor section, and be connected to the pulse power.Second optical screen film preferably is formed at the read electrode side.Or as described in the 5th embodiment, can adopt the optical screen film that forms by multilayer, wherein first optical screen film in the multilayer has opening above Sensor section, described first optical screen film covers the non-photoelectric conversion region of Sensor section side in the solid state image pickup device and is connected to direct voltage, second optical screen film in the multilayer is formed on first optical screen film under second optical screen film by a dielectric film, outstanding from the open side of first optical screen film to Sensor section, and be connected to pulse voltage.Second optical screen film preferably is formed at the read electrode side.Notice that Figure 26 has shown an individual layer of optical screen film as an example.
In addition, aiming screen covers film to apply the method for direct voltage or pulse voltage identical with the method for above-mentioned from first to the 4th embodiment.
In the solid state image pickup device 76 according to present embodiment, Sensor section 34 has a deviate region 77 respectively in channel stop layer 37 sides of reading grid 40 sides and neighbor of solid state image pickup device 76.This has been avoided the P type course of Sensor section 34 to read grid 40 diffusion, makes that reading voltage can be suppressed lowly and the dynamic margin of driving voltage obtains broadening.In addition, because P type layer 36 not in the horizontal direction (to channel stop layer 37) be diffused into the neighbor side under the transmission electrode of vertical register 39, so guaranteed the amount of charge that the effective coverage and having guaranteed of the vertical register 39 of neighbor is handled by vertical register 39.Covering film 41 by aiming screen applies voltage and can suppress noise and produce.Because optical screen film 41 is connected to DC power supply 51, so improved Sensor section 34 lip-deep lockings.In addition, because the high gate barrier of reading can be set, so can improve the halation fuzzy behaviour by applying a negative voltage when the charge transfer.When optical screen film 41 is connected to the pulse power, can aiming screen cover film 41 and apply the pulse synchronous with read pulse, so just can help read operation and reduce to read voltage.The optical screen film 41 that applies pulse voltage is sufficient by concrete arrangement in the read electrode side.
In addition, pulse voltage can be used with direct voltage.For example, after applying direct voltage, superimposed pulse voltage thereon.In this situation, the effect that can obtain to apply the effect of direct voltage simultaneously and apply pulse voltage.
To describe manufacture method below, wherein form a two-layer optical screen film according to a solid state image pickup device embodiment of the present invention.Note, in order to illustrate for giving identical symbol with each the foregoing description components identical.
Use the method for known manufacturing solid state image pickup device, on Semiconductor substrate 31, form and read grid 40, vertical register 39 and raceway groove and stop to distinguish 37 etc., in addition, on Semiconductor substrate 31, form the electrode 32 that is used as electric charge read electrode and charge transmission electrode by a dielectric film.Be used as formation n type diffused layer 35 in the district of Sensor section 34 one, form p type diffused layer 36 in its surface.In addition, form the interlayer dielectric 38 of coated electrode 32 and Sensor section 34.
Subsequently, on interlayer dielectric 38, form after first optical screen film 411, use and form opening 42 in normal optical lithography and first optical screen film 411 of etching technique above Sensor section 34.After this,, on first optical screen film 411, form second optical screen film 412, so that second optical screen film 412 is outstanding from the opening 42 1 side direction Sensor sections 34 of first optical screen film 411 by a dielectric film.Therefore, formed the aforesaid structure that has corresponding to Figure 21 A or Figure 23 A.
Below, with reference to the schematic construction sectional view of Figure 27 manufacture method according to a solid state image pickup device of the present invention is described, wherein Sensor section has deviate region.Because except P type layer 36, the method manufacturing that Sensor section 34 passes through as hereinbefore is so only describe the manufacture method of the P type layer 36 with feature of the present invention.
Shown in Figure 27 A,, on Semiconductor substrate 31, form and read grid 40, vertical register 39 and channel stop layer 37 etc., and then on Semiconductor substrate 31, form the electrode 32 that is used as electric charge read electrode and charge transmission electrode by a dielectric film by known method.One as the zone of Sensor section 34 in so that formed n type diffused layer 35.Then, form the interlayer dielectric 38 of coated electrode 32 and Sensor section 34.
After this, use resist-coating technology and photoetching technique, form a resist mask 81 that above n type diffusion layer 35, has an opening, be used for covering the end parts of channel stop layer 37 sides of the end parts of reading grid 40 sides and n type diffused layer 35.Then, by common ion injection method, adopt resist mask 81 as ion implantation mask, to the top layer of n type diffused layer 35 implanted dopant.Then, after removing resist mask 81, the heat treatment of expecting is to form the p type diffused layer 36 as the hole accumulated layers on n type diffused layer 35.Therefore, keep in read electrode (reading grid 40) side and at the n type diffused layer 35 of transmission electrode (being used to isolate the channel stop layer 37 of the neighbor) side of neighbor and become deviate region 77.In this way, formed an off-set construction.After this, formed the optical screen film of above-mentioned from first to the 5th embodiment.In this situation, form optical screen film to have the terminal (not shown) that is used for being connected to the DC power supply or the pulse power.This optical screen film can form before aforementioned hot is handled.
In above-mentioned manufacture method, on the channel stop layer 37 of reading grid 40 sides and neighbor, become deviate region 77 by making n type diffused layer 35, form p type diffused layer 36 on n type diffused layer 35, to use common ion injection method.By deviate region 77, form p type diffused layer 36 and separate from the channel stop layer 37 of reading grid 40 and neighbor.This P type layer that has suppressed Sensor section 34 after in the heat treatment carried out to read grid 40 diffusions, make to read voltage can be suppressed lowly and the dynamic margin of driving voltage broadened.In addition, because p type diffused layer 36 (to channel stop layer 37) not in the horizontal direction is diffused into the transmission electrode 39 times of the vertical register 29 of neighbor side, so guaranteed the active zone of vertical register 39, and guaranteed amount of charge by vertical register 39 processing.In addition, this manufacture method do not need to control direction that ion injects, angle etc. and thereby can reduce diffusion effect, make it possible to reduce influence to the element adjacent with p type diffused layer 36, make the size of transducer littler.
Perhaps, p type diffused layer 36 can followingly form.Shown in Figure 27 B, on Semiconductor substrate 31, formed and read grid 40, vertical register 39 and channel stop layer 37 etc., on Semiconductor substrate 31, also formed electrode 32 as electric charge read electrode and charge transmission electrode by a dielectric film by known manufacture method.In addition, in a zone as Sensor section 34, form n type diffused layer 35.Also formed the interlayer dielectric 38 of coated electrode 32 and Sensor section 34 in addition.
After this, by wherein using the common diagonal ion injection method as the mask of ion injection such as electrode 32, interlayer dielectric 38, p type impurity is doped to n type diffused layer 35 superficial layers.In this situation, the direction that ion injects is determined, makes that reading grid 40 sides can cover with electrode 32 and interlayer dielectric 38.Subsequently, carry out the heat treatment of needs on n type diffused layer 35, to form p type diffused layer 36 as the hole accumulated layers.As a result, kept n type diffused layer 35, and the zone that stays becomes deviate region 77 in read electrode (reading grid 40) side.In this way, formed an off-set construction.After this, formed the optical screen film of above-mentioned from first to the 5th embodiment.In this situation, form optical screen film to have the terminal (not shown) that is used for connecting the DC power supply or the pulse power.This optical screen film can form before aforementioned hot is handled.
In above-mentioned manufacture method, adopt the diagonal ion injection method, on the channel stop layer 37 of reading grid 40 sides and neighbor, become deviate region 77 by making n type diffused layer 35, on n type diffused layer 35, to form p type diffused layer 36.By deviate region 77, form p type diffused layer 36 and separate from the channel isolation layer 37 of reading grid 40 and neighbor.This P type layer of having avoided Sensor section after in the heat treatment carried out to read grid 40 diffusions, make to read voltage can be suppressed lowly and the dynamic margin of driving voltage broadened.In addition, reduce diffusion effect thereby can reduce influence because this manufacture method can be injected by ion, and to make the size of transducer littler the element adjacent with p type diffusion layer 36.
In addition, the manufacture method that forms the optical screen film be connected to DC power supply can be covered film by aiming screen and applied voltage and restrain noise and produce.And the lip-deep locking that can improve Sensor section.In addition, by applying negative voltage when the charge transfer, high reading gate barrier and improve the halation fuzzy behaviour can be set.In addition, the manufacture method that forms the optical screen film that is connected to the pulse power can apply the pulse synchronous with read pulse, thereby helps read operation and reduce to read voltage.
The present invention is not limited in the foregoing description, can carry out other various modifications without departing from the present invention.
According to above-mentioned solid state image pickup device of the present invention, employing can be applied to predetermined voltage signal the independently structure on the electrode of optical screen film or other and the first electrode electricity, and the electromotive force that makes each part is variable and electromotive force can be by applying voltage signal correction.This makes can improve the halation fuzzy behaviour by revising electromotive force, read characteristic, pixel isolation characteristic and noise characteristic.
In addition, according to solid state image pickup device of the present invention and manufacture method thereof, form the zone that likens to the lower doping content of the center that is positioned at first conductive-type semiconductor area second conductive-type semiconductor area of optical receiving sensor photoelectric conversion region partly by the end parts in pixel isolation layer side, the potential depth that can revise in optical receiving sensor lip-deep end parts partly produces with the noise of reading voltage and inhibition picture element isolation region side that reduces the electrode side.
This makes to improve more effectively reads characteristic and noise characteristic.
Therefore, the present invention can provide the solid state image pickup device that has satisfied noise characteristic and read characteristic.
In addition, according to the present invention, because even pixel miniaturization and its quantity increase also can obtain satisfied noise characteristic and read characteristic, so, can make miniaturization such as camera and obtain high-resolution and high image quality by using according to solid state image pickup device of the present invention.
According to solid state image pickup device of the present invention, aiming screen covers film and applies voltage and can suppress noise and produce.Because optical screen film is connected to DC power supply, so improved the lip-deep locking of Sensor section.Applying negative voltage when charge transfer can be provided with highly and improve the halation fuzzy behaviour so that read gate barrier.When optical screen film is connected to the pulse power, can applies the pulse synchronous, thereby can help read operation and reduce to read voltage with read pulse.Therefore high-quality be can provide, dark current and flawless solid state image pickup device avoided producing.In addition, can increase the effective coverage of vertical register.
According to solid state image pickup device of the present invention, aiming screen covers film and applies voltage and can suppress noise and produce.By when reading solid state image pickup device, on optical screen film, applying direct voltage, can improve the lip-deep locking of Sensor section.Read gate barrier and be provided with highly and improve the halation fuzzy behaviour by applying negative voltage when the charge transfer, can making.Aiming screen covers the driving method that film applies pulse voltage and can help read operation and reduce to read voltage when reading the solid-state image pick device.Therefore high-quality be can provide, dark current and flawless solid state image pickup device avoided producing.
According to solid state image pickup device of the present invention, because Sensor section has the deviate region that is arranged between the channel stop layer of reading grid and neighbor in the solid state image pickup device, so can suppress lowly and the dynamic margin of broadening driving voltage with reading voltage.In addition, can guarantee the quantity of the electric charge that the active zone of vertical register and guarantee is handled by vertical register.In addition, aiming screen covers film and applies voltage and can suppress noise and produce.Because optical screen film is connected to DC power supply, so can improve the lip-deep locking of Sensor section.In addition, read gate barrier and be provided with highly and improve the halation fuzzy behaviour by applying negative voltage when the charge transfer, can making.When optical screen film is connected to the pulse power, can applies the pulse synchronous, thereby can help read operation and reduce to read voltage with read pulse.In addition, can increase the effective coverage of vertical register.
Manufacture method according to solid state image pickup device of the present invention, because deviate region is formed in the n type diffused layer of the channel stop layer side of reading gate electrode side and neighbor, and on n type diffused layer, form p type diffused layer by ion injection method, separate from the channel stop layer of reading grid and neighbor so can form p type diffused layer by deviate region.This makes can make and can suppress lowly and the solid state image pickup device of dynamic margin that can the broadening driving voltage with reading voltage.In addition, can guarantee the quantity of the electric charge that the active zone of vertical register and guarantee is handled by vertical register.In addition, aiming screen covers film and applies voltage and can suppress noise and produce.Because optical screen film is connected to DC power supply, so enough improve the lip-deep locking of Sensor section.In addition, read gate barrier and be provided with highly and improve the halation fuzzy behaviour by applying negative voltage when the charge transfer, can making.When optical screen film is connected to the pulse power, can help read operation to reduce to read voltage.

Claims (33)

1. solid state image pickup device comprises:
One electrode is used for being arranged at a side of above-mentioned optical receiving sensor part from constituting the optical receiving sensor part read signal electric charge of pixel.
One optical screen film forms to cover the image pickup district except described optical receiving sensor part, and it is applied a predetermined voltage signal.
One second conductive-type semiconductor area, be formed at the photoelectric conversion region that constitutes described optical receiving sensor part the lip-deep center of first conductive-type semiconductor area and
One comprises the district of the doping content lower than the doping content of described second conductive-type semiconductor area, is formed at the end of described electrode side and the opposed end of picture element isolation region side on the described first conductive-type semiconductor area surface.
2. solid state image pickup device according to claim 1, wherein, perhaps a direct current bias voltage or a clock pulse, perhaps they the two be used as described voltage signal.
3. solid state image pickup device according to claim 1 also comprises:
One is used to transmit the electric charge transmission part of described read signal electric charge, is arranged at a side of described optical receiving sensor part,
Wherein, described electrode is also as the charge transmission electrode in the described electric charge transmission part.
4. solid state image pickup device according to claim 1 wherein, forms the opening autoregistration of second conductive-type semiconductor area and the optical screen film above the described optical receiving sensor part of described optical receiving sensor part.
5. solid state image pickup device comprises:
One first electrode is used for from the optical receiving sensor part read signal electric charge that constitutes pixel or is used for transmitting described read signal electric charge, is arranged at described optical receiving sensor part side;
Another electrode, independent with described first electrode electricity, be arranged at the side of optical receiving sensor part described in the described electrode, it is applied a predetermined voltage signal;
One second conductive-type semiconductor area is formed at center on the first conductive-type semiconductor area surface that constitutes described optical receiving sensor photoelectric conversion region partly;
One comprises the district of the doping content lower than the doping content of described second conductive-type semiconductor area, is formed at the opposed end of the end parts and the picture element isolation region side of described first electrode on the described first conductive-type semiconductor area surface.
6. solid state image pickup device according to claim 5, wherein, perhaps a direct current bias voltage or a clock pulse, perhaps they the two as described voltage signal.
7. solid state image pickup device according to claim 5 also comprises:
One is used to transmit the electric charge transmission part of described read signal electric charge, is arranged at a side of described optical receiving sensor part,
Wherein, described first electrode is the charge transmission electrode in the described electric charge transmission part.
8. solid state image pickup device according to claim 5 wherein, forms second conductive-type semiconductor area of described optical receiving sensor part and the edge autoregistration of described another electrode.
9. solid state image pickup device comprises:
One photoelectric conversion section is used for producing electric charge according to the light quantity that receives;
One electric charge sump portion is used for receiving the electric charge of reading from described photoelectric conversion section by a read electrode,
Wherein, described photoelectric conversion section comprises first doped region of one first conductivity type and second doped region of second conductivity type that forms on described first doped region, and
Third and fourth doped region that comprises second conductivity type of the doping content lower than the doping content of described second doped region is formed between described second doped region and the described electric charge sump portion.
10. according to the solid state image pickup device of claim 9, also comprise:
One voltage application portion branch is independent of described read electrode and forms, wherein,
Form described the 3rd doped region adjacent to described second doped region, and described voltage application portion branch applies voltage to control the electromotive force of the 3rd doped region to described the 3rd doped region at least.
11. a method of making solid state image pickup device, the step that comprises is:
Provide an electrode in optical receiving sensor part one side that constitutes pixel, be used for from described optical receiving sensor part read signal electric charge;
Form the optical screen film in the image pickup district of a covering except that described optical receiving sensor part, it is applied a predetermined voltage signal;
Be formed centrally one second conductive-type semiconductor area on the surface of first conductive-type semiconductor area that constitutes described optical receiving sensor photoelectric conversion region partly, wherein,
After forming described first conductive-type semiconductor area,
Be formed centrally described second conductive-type semiconductor area on the surface of described first conductive-type semiconductor area, and on the described first conductive-type semiconductor area surface, form a district that comprises the doping content lower than the doping content of described second conductive-type semiconductor area at the opposed end of the end parts of described electrode side and picture element isolation region side.
12. the method for manufacturing solid state image pickup device according to claim 11,
Wherein, when forming described second conductive-type semiconductor area and the described district that comprises the doping content lower, inject to separate to the ion of the end parts of described electrode side and carry out with ion injection to the opposed end of described picture element isolation region side than the doping content of described second conductive-type semiconductor area.
13. the method for manufacturing solid state image pickup device according to claim 11,
Wherein, after having formed first conductive-type semiconductor area, form described optical screen film, form an opening in the described optical screen film above described optical receiving sensor part, and use described optical screen film to carry out ion and inject to form described second conductive-type semiconductor area as mask.
14. a solid state image pickup device is transmitted in the signal of telecommunication that obtains by opto-electronic conversion in the Sensor section by charge coupled device, described device comprises:
One optical screen film has an opening and covers the non-photoelectric conversion region of Sensor section side above described Sensor section,
Wherein, described optical screen film is connected to DC power supply.
15. solid state image pickup device according to claim 14,
Wherein, described optical screen film is formed by multilayer, and first optical screen film in the wherein said multilayer provides an opening to cover the non-photoelectric conversion region of described Sensor section and be connected to ground being used for above described Sensor section; And
Second optical screen film in described multilayer is formed on the optical screen film under described second optical screen film, has a dielectric film therebetween, and is outstanding with the described Sensor section of opening one side direction from described first optical screen film, and is connected to DC power supply.
16. a solid state image pickup device is transmitted in the signal of telecommunication that obtains by opto-electronic conversion in the Sensor section by charge coupled device, described device comprises:
One optical screen film has an opening and covers the non-photoelectric conversion region of Sensor section side above Sensor section,
Wherein, described optical screen film is connected to the pulse power.
17. according to the solid state image pickup device of claim 16,
Wherein, described optical screen film is formed by multilayer, and first optical screen film in the wherein said multilayer provides an opening to cover the non-photoelectric conversion region of described Sensor section and be connected to ground being used for above described Sensor section; And
Second optical screen film in described multilayer is formed on the optical screen film under described second optical screen film, has a dielectric film therebetween, and is outstanding with the described Sensor section of opening one side direction from described first optical screen film, and is connected to the pulse power.
18. solid state image pickup device according to claim 17,
Wherein, described second optical screen film is formed at the read electrode side.
19. method that drives solid state image pickup device, described solid state image pickup device is transmitted in the signal of telecommunication that obtains by opto-electronic conversion in the Sensor section and is included in the optical screen film that the Sensor section top has an opening and covers the non-photoelectric conversion region of Sensor section side by charge coupled device, and the step that described method comprises is:
When reading described solid state image pickup device, described optical screen film is applied a direct current voltage.
20. the method for the described solid state image pickup device of driving according to claim 19,
Wherein, described optical screen film is formed by multilayer, and first optical screen film in the wherein said multilayer provides an opening to cover the non-photoelectric conversion region of described Sensor section and be connected to ground being used for above described Sensor section; And
Second optical screen film in described multilayer is formed on the optical screen film under described second optical screen film, has a dielectric film therebetween, and is outstanding with the described Sensor section of opening one side direction from described first optical screen film, and is connected to DC power supply.
21. method that drives solid state image pickup device, described solid state image pickup device is transmitted in the signal of telecommunication that obtains by opto-electronic conversion in the Sensor section and is included in the optical screen film that the Sensor section top has an opening and covers the non-photoelectric conversion region of Sensor section side by charge coupled device, and the step that described method comprises is:
When reading described solid state image pickup device, described optical screen film is applied pulse voltage.
The method of the described solid state image pickup device of 22 drivings according to claim 21,
Wherein, described optical screen film is formed by multilayer, and first optical screen film in the wherein said multilayer provides an opening to cover the non-photoelectric conversion region of described Sensor section and be connected to ground being used for above described Sensor section; And
Second optical screen film in described multilayer is formed on the optical screen film under described second optical screen film, has a dielectric film therebetween, and is outstanding with the described Sensor section of opening one side direction from described first optical screen film, and is connected to the pulse power.
23. solid state image pickup device according to claim 22,
Wherein, described second optical screen film is formed at the read electrode side.
24. solid state image pickup device, described solid state image pickup device is transmitted in the signal of telecommunication that obtains by opto-electronic conversion in the Sensor section and is included in the optical screen film that the Sensor section top has an opening and covers the non-photoelectric conversion region of Sensor section side by charge coupled device
Wherein, described optical screen film is connected to DC power supply, and
Described Sensor section has the deviate region between the channel stop layer of reading grid and neighbor that is arranged in the described solid state image pickup device.
25. solid state image pickup device according to claim 24,
Wherein, described optical screen film is formed by multilayer, and first optical screen film in the wherein said multilayer provides an opening to cover the non-photoelectric conversion region of described Sensor section and be connected to ground being used for above described Sensor section; And
Second optical screen film in described multilayer is formed on the optical screen film under described second optical screen film, has a dielectric film therebetween, and is outstanding with the described Sensor section of opening one side direction from described first optical screen film, and is connected to DC power supply.
26. solid state image pickup device, described solid state image pickup device is transmitted in the signal of telecommunication that obtains by opto-electronic conversion in the Sensor section and is included in the optical screen film that the Sensor section top has an opening and covers the non-photoelectric conversion region of Sensor section side by charge coupled device
Wherein, described optical screen film is connected to the pulse power, and
Described Sensor section has the deviate region between the channel stop layer of reading grid and neighbor that is arranged in the described solid state image pickup device.
27. solid state image pickup device according to claim 26,
Wherein, described optical screen film is formed by multilayer, and first optical screen film in the wherein said multilayer provides an opening to cover the non-photoelectric conversion region of described Sensor section and be connected to ground being used for above described Sensor section; And
Second optical screen film in described multilayer is formed on the optical screen film under described second optical screen film, has a dielectric film therebetween, and is outstanding with the described Sensor section of opening one side direction from described first optical screen film, and is connected to the pulse power.
28. solid state image pickup device according to claim 27,
Wherein, described second optical screen film is formed at the read electrode side.
29. method of making solid state image pickup device, described solid state image pickup device is transmitted in the Sensor section signal of telecommunication that obtains by opto-electronic conversion by charge coupled device and is included in the Sensor section top to have an opening and covers the non-photoelectric conversion region of Sensor section side and be connected to an optical screen film of DC power supply
Wherein, forming the step that the technology of described Sensor section comprises is:
Between the channel stop layer of the charge coupled device of reading grid and neighbor, form a n type diffused layer;
Use ion injection method to form a p type diffused layer on described n type diffused layer, making in described N type diffusion region of reading the channel stop layer side of gate electrode side and neighbor becomes deviate region.
30. according to the method for the described manufacturing solid state image pickup device of claim 29,
Wherein at the non-photoelectric conversion region that form to cover described Sensor section side and after having first optical screen film of a dielectric film betwixt,
Form described optical screen film and make described opening above described Sensor section, be formed in first optical screen film, and
Second optical screen film is outstanding to described Sensor section from the open side of described first optical screen film, is being formed with a dielectric film on described first optical screen film between described second optical screen film and first optical screen film.
31. method of making solid state image pickup device, described solid state image pickup device is transmitted in the Sensor section signal of telecommunication that obtains by opto-electronic conversion by charge coupled device and is included in the Sensor section top to have an opening and covers the non-photoelectric conversion region of Sensor section side and be connected to an optical screen film of the pulse power
Wherein, forming the step that the technology of described Sensor section comprises is:
Between the channel stop layer of the charge coupled device of reading grid and neighbor, form a n type diffused layer;
Use ion injection method to form a p type diffused layer on described n type diffused layer, making in described N type diffusion region of reading the channel stop layer side of gate electrode side and neighbor becomes deviate region.
32. the method for manufacturing solid state image pickup device according to claim 31,
Wherein, after forming the non-photoelectric conversion region that covers described Sensor section side and having first optical screen film of a dielectric film betwixt,
Form described optical screen film and make described opening above described Sensor section, be formed in first optical screen film, and
Second optical screen film is outstanding to described Sensor section from the open side of described first optical screen film, is being formed with a dielectric film on described first optical screen film between described second optical screen film and first optical screen film.
33. according to claims 32 described solid state image pickup devices, wherein, described second optical screen film is formed at the read electrode side.
CNB2004800118169A 2003-03-06 2004-03-05 Solid-state imaging device, and manufacturing and driving method thereof Expired - Fee Related CN100481482C (en)

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