CN1777972A - Deflecting acceleration/deceleration gap - Google Patents
Deflecting acceleration/deceleration gap Download PDFInfo
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- CN1777972A CN1777972A CNA2004800106937A CN200480010693A CN1777972A CN 1777972 A CN1777972 A CN 1777972A CN A2004800106937 A CNA2004800106937 A CN A2004800106937A CN 200480010693 A CN200480010693 A CN 200480010693A CN 1777972 A CN1777972 A CN 1777972A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
Abstract
An accelerating structure and related method for accelerating/decelerating ions of an ion beam are disclosed. The structure and related method are suitable for use in selectively implanting ions into a workpiece or wafer during semiconductor fabrication to selectively dope areas of the wafer. In addition to accelerating and/or decelerating ions, aspects of the present invention serve to focus as well as to deflect ions of an ion beam. This is accomplished by routing the ion beam through electrodes having potentials developed thereacross. The ion beam is also decontaminated as electrically neutral contaminants within the beam are not affected by the potentials and continue on generally traveling along an original path of the ion beam. The electrodes are also arranged in such a fashion so as to minimize the distance the beam has to travel, thereby mitigating the opportunity for beam blow up.
Description
Technical field
The present invention relates generally to ion implant systems, and more specifically relates to the accelerating gap that is applicable to ion implant systems.
Background technology
Ion implant systems is used to make semiconductor doping with impurity in the integrated circuit manufacturing.In these systems, ion source makes required doped chemical ionization, and the ion beam form of described required doped chemical energy requirement to have is extracted out from described source.Ion beam is directed to semiconductor wafer surface subsequently and sentences just dopant element is injected wafer.For example in wafer in the manufacture process of transistor device, beam ion penetrates wafer surface has required conductivity with formation zone.Typical ion implanter comprises the ion source that is used to produce ion beam, comprise be used to utilize magnetic field ion beam is carried out mass resolution mass analysis apparatus beam-line components and comprise the semiconductor wafer that will inject ion beam or the target chamber of workpiece.
In order to realize the required injection of given application, the dosage and the energy that inject ion can change.Ion dose is controlled the injection ion concentration of given semi-conducting material.Generally, big electric current injector is used to carry out heavy dose and injects, and the medium current injector is used for the more application of low dosage.Ion energy is in order to the junction depth in the control semiconductor device, and wherein the energy level of beam ion decision ion injects the degree of depth of degree or injection ion.Continuation trend towards more and more littler semiconductor device need be in order to carry the mechanism of big beam current under low energy condition.Big beam current provides necessary dosage level, and low-yieldly allows to carry out shallow-layer and inject.
In addition, the continuation trend of the higher device density on semiconductor wafer requires the uniformity of the injection beam of the inswept workpiece of careful control.Another kind of continuation trend is towards increasing semiconductor wafer sizes, for example the wafer of 300mm diameter.In conjunction with higher device density, bigger wafer size has increased the cost of single wafer.The result is, avoiding or alleviating aspect scrapping the expense that wafer is associated, to implantation homogeneity and other parameter control than more crucial in the past.
Summary of the invention
Simple and clear summary has hereinafter been proposed so that basic comprehension to one or more aspects of the present invention is provided.This is generally if it were not for extensive overview of the present invention, and neither is intended to determine key of the present invention or decisive element, also is not intended to describe scope of the present invention.On the contrary, the main purpose of summary is to propose notions more of the present invention in simplified form as the preorder in greater detail that proposes subsequently.
The present invention is directed to a kind of accelerator or accelerating structure and correlation technique that is used for making the ion acceleration of ion beam.This accelerator and correlation technique are applicable in semiconductor fabrication ion selectivity ground are injected in workpiece or the wafer so that wafer area is carried out selective doping.Except ion being quickened and/or slow down, many aspects of the present invention are used so that ion focusing in the ion beam and deflection.This is achieved by electrode by the guiding ion beam, and described electrode has the current potential that passes its formation.Because the electric neutrality pollutant in the beam is not influenced by current potential and continues to advance along the initial path of ion beam substantially, so ion beam is also purified.Electrode also is arranged so that the distance that makes beam have to advance by accelerator reduces to minimum, alleviates the tendency that beam amplifies thus.
According to an aspect of the present invention, a kind of being suitable for comprises first electrode and second electrode with the accelerator that ion injects in the workpiece, and described first electrode has first hole that wherein forms, and described second electrode has second hole that wherein forms.First and second electrodes are orientated so that parallel to each other substantially, and the alignment of first and second holes is so that pass the gap that limits between first and second holes perpendicular to the axis of first and second electrodes substantially and pass coincide point (coincident point) in first and second holes.When leaving in ion beam enters first hole and by second hole, the ion in the ion beam that the current potential that forms between first and second electrodes causes substantially advancing along axis is accelerated according to the current potential bias voltage or slows down.Accelerator also comprises between first and second electrodes and first mid-gap electrode above the gap, and between first and second electrodes and second mid-gap electrode below the gap.The current potential that forms between first and second mid-gap electrode causes the interior ion deflecting of ion beam away from described axis.
According to another aspect of the present invention, a kind ofly be suitable for that ion is injected accelerator in the workpiece and comprise the device of the ion acceleration that is used for making ion beam and be used for by making the ion deflecting in the ion beam make the device of ion beam bending away from advance the substantially axis on institute edge of ion beam.Be used for the device of acceleration and be used for crooked device operating independently of one another to make beam acceleration and bending respectively.
According to a further aspect of the invention, being suitable for that ion is injected method that being used in the workpiece make the ion acceleration is included in and forms current potential between first pair of electrode so that the ion acceleration of ion beam and form current potential so that the ion deflecting of ion beam between second pair of electrode.
For realizing aforementioned and related objective, following description and accompanying drawing have elaborated some exemplary aspect of the present invention and execution mode.These have only represented the minority mode in the adoptable multiple mode of principle according to the present invention.By to following detailed description of the present invention and when considering in conjunction with the accompanying drawings, with easy to understand others of the present invention, advantage and novel feature.
Description of drawings
Fig. 1 shows the schematic block diagram according to the part of the ion implant systems of one or more aspects of the present invention;
Fig. 2 A shows the cross-sectional side view according to the ion implant systems of one or more aspects of the present invention;
Fig. 2 B is the schematic diagram according to the ion implant systems of one or more aspects of the present invention;
Fig. 3 shows the focusing effect according to the electrode that is in deceleration mode of one or more aspects of the present invention;
Fig. 4 shows the focusing effect according to the electrode that is in aero mode of one or more aspects of the present invention;
Fig. 5 shows the curvature effect according to the electrode that is in deceleration mode of one or more aspects of the present invention;
Fig. 6 shows the curvature effect according to the electrode that is in aero mode of one or more aspects of the present invention;
Fig. 7 is the perspective cross-sectional view according to an example of the accelerator of one or more aspects of the present invention; With
Fig. 8 shows the flow chart of method of ion acceleration that is used for making ion beam according to one or more aspects of the present invention.
Embodiment
Present invention is described below in conjunction with accompanying drawing, wherein uses similar Reference numeral to represent similar element from start to finish.Example explanation and following description are exemplary rather than restrictive in essence.Therefore, should be appreciated that the modification of described system and method and other execution mode that departs from those embodiment described herein are regarded as falling in the scope of the present invention and claims.
The present invention relates to be used for make the accelerator and the correlation technique of the ion acceleration of ion beam.Accelerator and correlation technique are suitable in semiconductor fabrication ion selectivity ground being injected in workpiece or the wafer so that wafer area is carried out selective doping.Except that ion being quickened and/or slow down, many aspects of the present invention are used so that ion focusing in the ion beam and deflection.This is achieved by electrode by the ion in the beams directed, and described electrode has the current potential that passes its formation.Because the electric neutrality pollutant in the beam is not influenced by current potential and continues to advance along the initial path of ion beam substantially, so ion beam is also purified.Electrode also is arranged so that make beam have to advance distance minimization by accelerator, alleviates the possibility that beam amplifies thus.
At first, show the ion implant systems 100 that is suitable for implementing one or more aspects of the present invention with the block diagram form referring to Fig. 1.System 100 comprises the ion source 102 that is used to produce along the ion beam 104 of course of the beam.Ion beam source 102 for example comprises the plasma source 106 with associated power source 108.Plasma source 106 for example can comprise relatively long plasma constraint chamber, and ion beam is extracted out from described constraint chamber.
Beam-line components 110 is set at ion source 102 downstreams with from wherein receiving beam 104.Beam-line components 110 comprises mass analyzer 112 and accelerating structure 114, and described accelerating structure for example can comprise one or more gaps according to one or more aspects of the present invention.Beam-line components 110 is positioned at along the position in described path to receive beam 104.Mass analyzer 112 comprises a production part, and for example magnet (not shown), and operation is to provide the field of passing course of the beam so that according to quality (for example charge-to-mass ratio) ion from ion beam 104 is deflected with different tracks.The ion by magnetic field of advancing stands to guide single ion with required quality to move and make along course of the beam to have the ion deflecting that the do not need quality power away from course of the beam.
Ion acceleration thereby one or more accelerating gaps 114 can be operated in the beam and/or deceleration realize the injection of desired depth in workpiece, and by making beam bending in the mode that discusses in more detail below and from beam, isolating and pollute neutral corpuscle and cleansed beam.Further, accelerating gap 114 also can be operated so that beam-focusing.Therefore, be to be appreciated that, although term accelerator and/or accelerating gap this can be used for describing of the present invention one or more aspect, thereby be not limited to literal interpretation but these terms are not intended to carry out narrow definition to quickening, and be intended to carry out extensive interpretation in case comprising slow down and direction on change.Further should be appreciated that and and to use acceleration device 114 before carrying out magnetic analysis afterwards by mass analyzer 112.
Referring now to Fig. 2 A,, illustrates in greater detail the typical ion implant systems 200 that is suitable for implementing one or more aspects of the present invention among the figure slightly.System 200 comprises ion source 202, beam-line components 204 and target or terminal station 206.The expansion corrugated stainless steel tubing assembly 208 connecting terminal stations 206 and the beam-line components 204 that allow terminal station 206 to move with respect to beam-line components 204.
Ion source 202 comprises plasma chamber 210 and ion extractor assembly 212.Energy is delivered to ionizable impurity gas to produce ion in plasma chamber 210.Although the present invention is applicable to the system that produces anion by source 202, what generally produce is cation.Extract cation by the ion extractor assembly 212 that comprises a plurality of electrodes 214 by the slit in the plasma chamber 210.Therefore, ion extractor assembly 212 is done to extract ion and quicken to enter in the beam-line components 204 in order to extract positive ion beam 216 and make from plasma chamber 210, and more specifically enters in the mass analysis magnets 218 in the beam-line components 204.
Mass analysis magnets 218 comprises by having sidewall 224 and providing curved beam path 220 in the path 222 that metal (for example aluminium) beam guide of finding time limits by vacuum pump 226.Thereby the ion beam of propagating along this path 220 216 is subjected to the influence in the magnetic field of mass analysis magnets 218 generations repels the ion with inappropriate charge-to-mass ratio.The intensity of this dipole magnetic field and orientation are subjected to the control of electronic-controlled installation 228, and described electronic-controlled installation is regulated the electric current of the field winding that passes through magnet 218 by magnetic connector 230.
The dipole magnetic field causes ion beam 216, and near first or the entrance tracks 232 202 move near path 222 ports of export second or exit track 234 along curved beam path 220 from ion source.Comprise that the part 236 of beam 216 of the ion with inappropriate charge-to-mass ratio and 238 deflections are away from warp rail and enter in the beam guiding sidewall 224.By this way, magnet 218 only allows those ions with required charge-to-mass ratio in the beam 220 all to cross by path 222.
Beam-line components 204 allegedly also can comprise the accelerator 240 according to one or more aspects of the present invention.Accelerator 240 comprises a plurality of electrodes 242, described electrode be arranged and biasing so that ion quickens and/or slow down, and make focusing of ion beam, bending and purification in following mode discussed in detail.Also can comprise the dosimetry indicating device for example faraday indicate that 244 (Faradyflag) are to detect the sample current of ion beam.Also can comprise plasma source 246 being provided for the plasma shower 248 of neutralization (just) electric charge, described (just) electric charge otherwise will be accumulated on the target workpiece by the result who injects with (just) electron ion bundle 216 as the target workpiece.Can comprise further that vacuum pump 250 is to find time to accelerator 240.
The downstream of accelerator 240 is terminal stations 206, and the one or more wafers 254 that handle or the bearing 252 of other workpiece are installed above described terminal station 206 comprises.Wafer support 252 is present in the target plane, and described target plane is orientated perpendicular to injecting beam direction substantially, is orientated although wafer support can also obviously be different from shown and described angle.Wafer support for example also can be taked to make wafer move through the form of the mechanical arm or the rotating circular disk of beam.Fig. 2 A shows the wafer support 252 of disc-shape, and its motor 256 by 206 places, terminal station is rotated.Therefore when wafer when circular path moves, ion beam strikes is installed to the wafer on the bearing.Terminal station 206 pivots around point 258, and described point is the intersection point of ion beam path 260 and wafer 254, so that target plane can be regulated around this point 258.
Should be appreciated that the collision between ion and background or the residual particulates can be at the neutral contaminate particulate of the region generating of accelerator upstream.This percussion can cause some ions and background or other particulate exchange charge, becomes neutral corpuscle or pollutant thus.These neutral corpuscles can be injected in the zone that will mix on the wafer with ion, thus the doped level of dilution expection and doping process had a negative impact.More importantly, because these particulates are electroneutral, therefore they can be uninfluenced (for example, be not accelerated, slow down, focus on, crooked or otherwise on speed and/or direction, produce change) by accelerator, and more specifically by electrostatic field by the electrode generation.Just because of this, these particulates can inject desired depth place in the wafer, and this is because the energy level of their (uninfluenced) may be different from by accelerator and be subjected to the energy level of bending, focusing, acceleration and/or decelerate ions in the ion beam of its adjusting.This neutral particle contamination can make the desired properties of gained semiconductor device be seriously undermined.
One or more aspect of the present invention is at least by utilizing the one or more electrodes 242 in the accelerator to make the ion beam bending make ion deflecting solve the neutral particle contamination problem away from the neutral pollutant in the beam.But the ion beam that purifies is the angle between about 5 to 25 degree of automatic pollution thing path deflection for example, because pollutant is electroneutral, so pollutant do not influence by electrode, and therefore described deflection also betides the initial path of (pollution) ion beam.Ion beam is directed into the selection zone of the workpiece that will mix with percussion on the workpiece.The barrier that should be appreciated that some types for example can be placed in neutral corpuscle stream front to prevent pollutant percussion workpiece or wafer.
Should also be appreciated that one or more aspect of the present invention is also at amplifying relevant problem with ion beam.Beam amplify as similar charged corpuscle repel each other character the result and produce.The positive charged ions that forms ion beam is repelled mutually owing to so-called " space-charge force ".Square being inversely proportional to of space charge effect and ion beam energy, but and therefore the intrafascicular ion of carried as side-arm deceleration and increase, make easier dispersion of beam or amplification.Because space-charge force, the horizontal broadening of ion beam are in proportion to:
Wherein m is a mass of ion, and q is an ionic charge, and I is a beam current, and U is a beam energy, and z is the travel distance of ion beam, supposes that ion beam is uniformly and has circular cross section.Therefore can recognize that the possibility that beam amplifies increases along with the increase of beam travel distance.Therefore, arrive wafer by long distance, make all ions more be difficult to arrive wafer so, particularly in beam deceleration and exist under the situation of ion concentration in big beam current or the beam if ion beam is advanced.One or more aspect of the present invention at least by arranging the electrode in the accelerator so that make beam arrive distance minimization that the target wafer has to advance and by beam-focusing being disperseed with the beam that forms opposite space charge induction and amplifying at beam.
Fig. 2 B shows the another kind of ion implant systems 262 that is suitable for implementing one or more aspects of the present invention.System 262 comprises that modular gas cabinet 264, auxiliary gas box 266 and gas cabinet purge remote control panel 268.Gas cabinet 264,268 gases comprising one or more dopants, and case 264,268 help with gas-selectively be conveyed in the life-saving ion source 282 in the system 262, wherein gas can carry out ionization and is suitable for injecting ion in wafer or the workpiece to produce optionally to bring in the system 262.Gas cabinet remote control panel 268 helps on needs or required basis gas or discharging of other material or the system of purging out 262.
Wherein, thus can comprise that secondary terminal power distribution equipment 272 and high voltage isolating transformer 274 are produced ion so that the impurity gas electricity excites and send energy to impurity gas from gas.Ion beam extraction assembly 276 is included to extract ion and makes them quicken to enter in the wire harness apparatus 278 from ion source 282, described wire harness apparatus comprises mass analysis magnets 280.Mass analysis magnets 280 can be operated to tell or to repel the unsuitable ion of charge-to-mass ratio.Particularly, mass analysis magnets 280 comprises the beam guide with crooked sidewall, when having one or more magnetic fields that the ion of not wishing mass-charge ratio produces by the magnet by mass analysis magnets 280 when propagating by beam guide, described ion collision enters in the described crooked sidewall.
According to one or more aspects of the present invention, parts 284 can be included to the angle of assist control ion beam.These parts wherein can comprise the scanning angle correcting lens.Acceleration post 286 helps controlling and regulating the speed of ion in the ion beam and/or make described ion focusing.Parts 288 can be operated to leach contaminate particulate, and one or more aspects for example according to the present invention also comprise the energy of final energy filter with pollution abatement particulate percussion wafer or workpiece.Of the present invention example is combined in 286 and 288 effect in the structure.
Wafer or workpiece 290 are loaded in the end station chamber 292 and inject in order to utilize ion to carry out selectivity.Wafer in mechanical scanning drive unit 294 OPSs 292 is to help the selectivity percussion of beam.Wafer or workpiece 290 move in the end station chamber 292 by wafer control system 296, and described wafer control system for example can comprise one or more machineries or robots arm 297.Operator's console 298 allows the operator to pass through optionally one or more parts adjustment injection technologies of control system 262.At last, distribution box 299 is included to be whole system 262 power supplies.
The focusing of ion beam character of the accelerator 300 that one or more aspects according to the present invention are provided with is described and is discussed in conjunction with Fig. 3.First electrode 302 and second electrode 304 are provided with respectively has first hole 306 and second hole 308 that wherein forms.First electrode 302 and second electrode 304 are parallel to each other substantially, and hole 306,308 limits the gap 310 between the electrode 302,304, and the axis 312 perpendicular to electrode 302,304 can be by described gap so that intersect with first hole 306 and second hole 308 substantially.Gap 310 has the width 314 that equals distance between first electrode 302 and second electrode 304 substantially and equals first hole 306 substantially and the height 316 of second hole, 308 height.Yet, should be appreciated that element, functional part, parts and/or the part shown in Fig. 3 (and at these all other figure that comprise) be not according to proper proportion or relative to each other proportional illustrating.By example, gap 310 and hole 306,308 can significantly be amplified with respect to its actual size in Fig. 3.
In operation, by being applied different bias voltages 320,322, first electrode 302 and second electrode 304 between electrode 302,304, produce electrostatic field 318.Because internal electric field leaks by hole 306,308, so hole 306,308 influences Electric Field Distribution.Equally, because electrostatic field curls around being portalled in the end 326 of 306,308 electrode 302,304 in qualification, so field line 324 is bent and is entered in the gap 310.Should be appreciated that in example shown in Figure 3, when field line shown in the direction of arrow on the field line 324 when second electrode 304 points to first electrode 302, electrode 302,304 biasings are so that the ion retardation by gap 310.
Two tracks 328,330 that figure 3 illustrates the ion beam intermediate ion by the gap are with the explanation focusing effect.Should be appreciated that these tracks are that the track of exemplary and actual ions can be different with these tracks 328,330 in essence.In moderating process, when ion entered gap 310 by first hole 306, field line 324 promoted ion away from the axis 312 that passes gap 310.Yet, when ion initially enters gap 310, because their noticeable decelerations not, so they still have big energy and momentum.Therefore field line 324 has minimum influence at this some place to ion trajectory, and as shown in 332 and 334, ion is only slightly pushed away axis 312.Yet when ion continued by the gap, therefore increasing the and field line 324 of their degree of deceleration had bigger influence to the respective rail of ion.When ion approximately passed through the halfway in gap 310, field line 324 promoted ions towards the axis 312 that passes gap 310, shown in 336 and 338.When ion during near second hole 308, they are by noticeable deceleration and have a momentum that significantly reduces.The result is that field line 324 influences ion trajectory on much bigger degree, cause them to assemble towards axis 310, shown in 340.Therefore, total net effect is that ion beam produces convergence or focusing.Should be appreciated that convergence amount shown in Figure 3 can be exaggerated in order to set forth.
Should be appreciated that in addition that under the situation that ion beam quickens should always imitating also only of focusing of ion beam is suitable for.As shown in Figure 4, thus wherein towards the direction of second electrode 304 ion is quickened by gap 310 so that field line 324 points to from first electrode 302 to first electrode 302 and second electrode, 304 biasings.When ion entered gap 310 by first hole 306, field line 324 advanced described ion towards axis 312, shown in 342 and 344.When ion initially moved rather slowly and has very little momentum, they were subjected to advancing quite significantly at this some place.Yet when ion continued by the gap, they continued to have quickened and obtained the momentum of increase.Just because of this, in case ion arrives the INTRM intermediate point place in gap 310 approximately, because ion quickens by gap 310 and leave second hole 308, so field line is very little to the influence of its track.Therefore total net effect is that ion beam produces convergence once more, and shown in 346, the described purposes of illustration that are converted into can be exaggerated.
Referring now to Fig. 5,, the accelerator 500 according to one or more aspects of the present invention has been described in more detail among the figure.Accelerator 500 comprises first electrode 502 and second electrode 504 and a pair of intermediate electrode plate.First electrode 502 and second electrode 504 are parallel to each other substantially and comprise first hole 506 and second hole 508 respectively.Between hole 506,508, limit gap 510 and electrode 502,504 and be arranged such that substantially the axis 512 perpendicular to first electrode 502 and second electrode 504 passes gap 510 and passes first hole 506 and second hole 508.
Intermediate electrode plate comprises upper mid-gap electrode 514 and lower mid-gap electrode 516.Between first electrode 502 and upper mid-gap electrode 514, limit the top first sub-gap area 518.Between first electrode 502 and lower mid-gap electrode 516, limit the bottom first sub-gap area 520.Similarly, between second electrode 504 and upper mid-gap electrode 514, limit the top second sub-gap area 522, and between second electrode 504 and lower mid-gap electrode 516, limit the bottom second sub-gap area 524.Ion beam 526 is by gap 510 and for example from for example about 12 degree of axis 512 deflections, and point 528 places in 510 downstreams focus in the gap.
In the example shown, concrete bias voltage has been described to help discussing the operation of accelerator 500.Yet, should be appreciated that for the purposes of the present invention, can between electrode, apply any suitable bias voltage to realize required result (for example quicken, deceleration and/or degree of deflection).Yet the bias value among Fig. 5 is effective for the deceleration of explanation ion beam 526.
Be to be appreciated that this is real, and the path independence that can take by gap 510 with ion.For example, in the example shown, the ion that enters the lower sub gap 520 between first electrode 502 and the lower mid-gap electrode 516 will speed up the ion that is in than entering the sub-gap 518, top between first electrode 502 and the upper mid-gap electrode 514 and quickens the bigger speed of speed of living in.This is because the potential difference between first electrode 502 and the lower mid-gap electrode 516 is than the potential difference between first electrode 502 and the upper mid-gap electrode 514 bigger (that is, being negative 0.5KV (negative 4KV Reduction of Students' Study Load 4.5KV) for lower sub gap 520 for negative 2.5KV (negative 4KV Reduction of Students' Study Load 6.5KV) and for sub-gap 518, top).
Yet this acceleration difference is offset by corresponding potential difference between upper mid-gap electrode 514 and the lower mid-gap electrode 516 and second electrode 504.For example, in the example shown, second electrode 504 is biased into zero (for example ground connection).Therefore, slow down to a greater degree from the ion ratio in the first sub-gap 520, bottom ion from the first sub-gap 518, top.This has offset the difference of its acceleration when ion enters the gap, so that when ion leaves the gap, they all have identical substantially energy (for example 2KeV).Ion from the first sub-gap 520, bottom will slow down to a greater degree, this is because will have to cross negative 6.5KV (for example, the negative 6.5KV bias voltage of lower mid-gap electrode 516 deducts zero of second electrode 504 and lies prostrate bias voltage) when they pass sub-gap 524, bottom second.On the contrary, ion from the first sub-gap 518, top still less slows down on degree ground, this is because only have to cross negative 4.5KV (for example, the negative 4.5KV bias voltage of upper mid-gap electrode 514 deducts zero of second electrode 504 and lies prostrate bias voltage) when they pass sub-gap 522, top second.Therefore, do not consider the energy level that different paths that they take and their fall, ion reveals from channel effect with identical substantially energy level (for example 2KeV).
Should be appreciated that upper mid-gap electrode 514 and lower mid-gap electrode 516 play at least two effects: i.e. beam bending and beam drawn in the gap 510 amplify to alleviate beam.Producing electrostatic field betwixt thereby mid-gap plates 514,516 adds different bias voltages usually each other makes beam crooked up or down according to bias voltage.In the example that illustrates, for example, upper mid-gap electrode 514 and lower mid-gap electrode 516 are each biased to negative 4.5KV and negative 6.5KV.Suppose that beam comprises the ion of positively charged, this potential difference causes by the positive charged ions in gap 510 stressed downwards towards with the lower mid-gap electrode 516 of negative electricity more, finally causes beam 526 to be bent downwardly or deflection (for example about 12 degree).
Between upper mid-gap electrode 514 and the lower mid-gap electrode 516 and the potential difference between first electrode 502 and second electrode 504 how to enter gap 510 and alleviate beam and amplify by influencing ion in the beam 526.This may be necessary, and this is because enter that beam can be in or near maximum beam current (for example ion concentration) and therefore can have the bigger tendency of radially outward dispersing or amplifying, particularly in case after entering the electrostatic field of space charge with increase.For example, in example shown in Figure 5, upper mid-gap electrode 514 and lower mid-gap electrode 516 add negative bias (for example, being respectively negative 4.5KV and negative 6.5KV with respect to negative 4KV) with respect to the voltage of first electrode 502.This potential difference is drawn in the ion in the beam 526 in the gap 510.Just because of this, beam 526 quickens to enter in top first and the first sub-gap 518,520, bottom and has alleviated the beam amplification thus.This combines with beam-focusing effect (Fig. 3 and Fig. 4) and helps making beam 510 by the gap 510 in the accelerator structure 500, and does not lose the capacity of beam 526.
Should be appreciated that layout, configuration and/or the shape that can design upper mid-gap electrode 514 and lower mid-gap electrode 516 are to help controlling the beam lens effect.By example, in the example explanation of Fig. 5, lower mid-gap electrode 516 has the width that reduces slightly and also has the angle 532 of slightly cutting sth. askew with respect to upper mid-gap electrode 514.These are regulated and have checked when the ion near lower mid-gap electrode 516 bears stronger acceleration owing to the difference that applies bias voltage and/or slows down the lens effect of the enhancing that described ion is subjected to basically.Yet, should be appreciated that for the purposes of the present invention these electrodes 514,516 can have any suitable configuration, comprise identical shape.It will also be appreciated that, beam (for example zero acceleration) the pattern bending of can quickening, slow down and/or drift about, this is because mainly be responsible for the upper mid-gap electrode 514 and the lower mid-gap electrode 516 of beam bending, with main first electrode 502 and the operation independently substantially of second electrode 504 of being responsible for beam 510 acceleration.
Total net effect of all potential differences is the focusing and the deflection of beam 526 intermediate ions.When the neutral corpuscle in the beam that not stoped by electrode effect continues to advance along 512 the initial beam path of paralleling to the axis, produce beam and purify.But for example barrier or the absorbing structure (not shown) of some types of percussion of pollutant subsequently, described barrier or absorbing structure halt pollutant and protect any workpiece not contact with pollutant.On the contrary, the track of deflected ion beam 526 causes its suitably selection zone (not shown) of percussion and doping workpiece.Be to be appreciated that, the layout of electrode (for example upper mid-gap electrode 514 and lower mid-gap electrode 516 are in the middle of first and second electrodes 502,504) is also amplified in order to alleviate beam, and this is because this configuration makes the distance minimization of having to advance before the beam 526 percussion wafers.By making beam 526 produce deflection (for example by upper mid-gap electrode 514 and lower mid-gap electrode 516) and making beam-focusing (for example by first electrode 502 and second electrode 504) simultaneously, rather than these crooked and focusing stages are disposed in order, the terminal station can be positioned at more the position near accelerator.
According to one or more others of the present invention, accelerator 500 can comprise that also the upper and lower suppresses electrode 534,536.Suppress electrode in order between the current potential of wafer and neutral region 530 upstreams, to produce potential barrier.For example forward to and show Fig. 6 that ion beam quickens, suppress electrode 534,536 and be each biased to negative 4KV, although the present invention anticipates any bias value.Bias voltage is arranged and is produced the negative potential barrier 538 of extending and entering neutral region 530.Under the situation that does not have this inhibition electrode 534,536 and the potential barrier that forms 538, the positive potential 540 of other electrode can appear and enter neutral region, described neutral region is adjacent with the terminal station (not shown), and with electronics from beam 526 and may be present on the wafer or near those materials and pull out.Can disturb the space charge control that realizes by plasma overflow (plasma flood) like this, described plasma overflow is supplied with electronics and is entered near the terminal station the beam and purpose is neutralization or reduces charging to wafer, described charging otherwise as positive charged ions being injected the result in the wafer and taking place.During the positive potential 540 of upstream, terminal station can attract and the plasma of electronics away from wafer, cause potential beam to amplify and wafer charges.To make electrical steering by suppressing negative potential barrier or wall barrier 538 that electrode 534,536 produces, described electronics otherwise then be pulled away from the terminal station by current potential 540.
In addition, although be described suppressing electrode 534,536 in conjunction with Fig. 6, the operation that should be appreciated that device is with to combine the described operation of Fig. 5 similar substantially, beam 526 be accelerated rather than be decelerated and the focus of beam 526 outside the page.Representative value shown in Figure 6 increases to 120KeV in order to the energy level with beam from 80KeV, makes beam quicken 1.5 times.When ion crosses the sub-gap area 524 in the top second sub-gap area 522 and bottom second, the cation in the beam 526 will be accelerated.
Forward Fig. 7 to, there is shown perspective cross-sectional view according to the typical accelerator 700 of one or more aspects of the present invention.Accelerator comprises first, second and third electrode 702,704,706 parallel to each other substantially.Electrode 702,704,706 has the corresponding hole 708,710,712 that forms therein respectively.Hole 708,710,712 limits the gap 714 of passing device 700, so that it is crossing with the coincide point in the hole 708,710,712 to be drawn the axis 716 in gap 714.Upper and lower mid-gap electrode 718,720 by respectively and put on gap 714 and below and between first and second electrodes 702,704.Similarly, the upper and lower suppress electrode 722,724 be collocated in respectively gap 714 top and following and second and third electrode 704,706 between.In the example shown, lower mid-gap electrode 720 has oblique angle 726 or reduces the design shape that distortion focuses on (aberrant focusing).
Referring now to Fig. 8,, there is shown the typical method 800 of ion acceleration that is used for making ion beam according to one or more aspects of the present invention.This acceleration is for example applicable in semiconductor fabrication ion selectivity ground being injected in workpiece or the wafer so that wafer area is mixed.Be a series of behaviors or incident although method 300 is shown and described hereinafter, should be appreciated that the present invention is not subjected to the restriction of order shown in these behaviors or the incident.For example, according to one or more aspects of the present invention, some behaviors can different order take place and/or take place simultaneously with departing from those behaviors of this elaboration and/or description or other behavior or the incident of incident.In addition, implement the method according to this invention and do not need step shown in all.In addition, can be combined in the formation of structure of this elaboration and description and/or processing and implement the method according to this invention in conjunction with other not shown structure.
Method wherein forms current potential so that the ion acceleration in the ion beam by frame 802 beginnings between first pair of electrode.Should be appreciated that and also can utilize this acceleration current potential to make ion focusing in the ion beam.In frame 804, between second pair of electrode, form current potential subsequently so that the ion deflecting in the ion beam.In frame 806, between the 3rd pair of electrode in the first and second electrode pair downstreams, form current potential to suppress current potential from first and second pairs of electrodes and extend and to enter in the neutral region.Method finishes subsequently.
Should be appreciated that ion beam can comprise is formed the neutral corpuscle that current potential influences.Because therefore neutral corpuscle not deflection is separated in the ion of described neutral corpuscle from ion beam away from the initial path of ion beam and not by current potential focusing or acceleration.It will also be appreciated that, the gap that ion beam can be advanced and be limited by between first and second holes that form in first and second electrodes that form first pair of electrode respectively, and the second pair of electrode can comprise between first pair of electrode and first electrode above the gap, and also between first pair of electrode but be positioned at second electrode below the gap.This layout makes the electrode configuration compactness, makes distance minimization that beam has to advance and alleviated the beam amplification thus.
Although the present invention is set forth and describes above, be to be appreciated that those skilled in the art will expect that in reading with after understanding this specification and accompanying drawing equivalence changes and modification in conjunction with some aspect and embodiment.Specifically with regard to the various functions that above-mentioned parts (assembly, device, circuit, system etc.) are carried out, in order to the term of describing this parts (comprising) in conjunction with " meaning (means) " be intended to corresponding to, unless otherwise offer some clarification on, carry out any parts of the specific function (be on the function equivalence) of described parts, even the disclosed structure of the function of inequivalence in carrying out exemplary embodiments of the present invention described herein structurally.In this respect, it should further be appreciated that the present invention can comprise computer-readable medium, it has the executable instruction of computer of the step that is used to carry out the whole bag of tricks of the present invention.In addition, although only concrete feature of the present invention is disclosed in conjunction with one among a plurality of embodiment, this feature can with the advantages of one or more further features of other embodiment that can be required and any given or application-specific.In addition, " comprise (including) " at term, " comprising (includes) ", " having (having) ", " having (has) ", " having (with) " or its equivalent be used to describe in detail with claim in degree on, this term is intended to have pardon to be similar to the mode that term " comprises (comprising) ".In addition, term " typical case (exemplary) " only means example rather than best executive mode as used herein.
Claims (20)
1, a kind of being suitable for injected accelerating structure in the workpiece with ion, comprising:
Has first electrode that is formed on first hole wherein;
Have second electrode that is formed on second hole wherein,
The alignment of described first electrode and second electrode first hole parallel to each other substantially and described and second hole so that substantially perpendicular to the axis of described first electrode and second electrode by the gap that limits between described first and second holes and by described first and second holes
When wherein leaving in ion beam enters described first hole and by described second hole, the current potential that forms between described first and second electrodes causes substantially the ion in the ion beam of advancing along described axis to be accelerated according to the current potential bias voltage or slows down;
Between described first and second electrodes and be positioned at first mid-gap electrode above the described axis; With
Between described first and second electrodes and be positioned at second mid-gap electrode below the described axis,
The current potential that forms between wherein said first and second mid-gap electrode causes the interior described ion deflecting of described ion beam away from described axis.
2, accelerating structure according to claim 1, described ion beam further comprises the electric neutrality particulate, does not make described electric neutrality particulate continue to advance and be separated from described deflect ions is intrafascicular thus by described gap and along the direction that is parallel to described axis substantially thereby the current potential that forms between described first and second mid-gap electrode does not influence described electric neutrality particulate.
3, accelerating structure according to claim 2, described electric neutrality particulate are not subjected to the influence of the described current potential that forms between described first and second electrodes, thereby make described electric neutrality particulate do not quickened by described accelerator and slow down.
4, accelerating structure according to claim 3, the described current potential that forms between described first and second electrodes also cause the described ion convergent in the described ion beam.
5, accelerating structure according to claim 4, described electric neutrality particulate are not assembled and are continued to advance along the direction that is parallel to described axis substantially, so that be separated from described deflection converging ion beam.
6, accelerating structure according to claim 1, described first and second mid-gap electrode are parallel to each other substantially.
7, accelerating structure according to claim 1, one in the described mid-gap electrode has the oblique angle.
8, accelerating structure according to claim 1, described first and second mid-gap electrode have different in width.
9, accelerating structure according to claim 5 further comprises:
Be positioned at the described first mid-gap electrode downstream and be positioned at first above the described gap and suppress electrode; With
Be positioned at the described second mid-gap electrode downstream and be positioned at second below the described gap and suppress electrode,
Wherein said first and second current potentials that suppress to form between the electrode have produced the potential barrier that the current potential that prevents in the described gap extends and enter the neutral region in described accelerator downstream.
10, accelerating structure according to claim 9 further comprises:
Have the third electrode that is formed on the 3rd hole wherein,
Described third electrode is parallel to described first and second electrodes substantially, and described the 3rd hole align with described first and second holes so that described axis by the coincide point in described first, second and the 3rd hole,
Wherein be applied to current potential on the described third electrode in order to stop the potential barrier that described inhibition electrode produces.
11, a kind of being suitable for injected accelerating structure in the workpiece with ion, comprising:
Be used for making the device of the ion acceleration of ion beam; With
Be used for by making the ion deflecting in the described ion beam make the device of described ion beam bending away from advance the substantially axis on institute edge of described ion beam,
Wherein said device and the described device that is used for bending that is used for acceleration operated independently of one another to make described beam acceleration and bending respectively.
12, accelerating structure according to claim 11, the described device that is used for acceleration also makes the ion focusing of described ion beam.
13, accelerating structure according to claim 12, described ion beam further comprises neutral corpuscle, described neutral corpuscle neither is subjected to the described influence that is used for the device of acceleration also not to be subjected to the described influence that is used for bending apparatus, thereby makes that described neutral corpuscle continues to advance and be separated the described ion in described ion beam thus along described axis substantially.
14, accelerating structure according to claim 11 describedly is used for crooked device between the parts of the described device that is used for acceleration.
15, a kind of being suitable for injected the method that being used in the workpiece makes the ion acceleration with ion, comprising:
Between first pair of electrode, form current potential so that the ion acceleration in the ion beam; And
Between second pair of electrode, form current potential so that the ion deflecting in the described ion beam.
16, method according to claim 15 further comprises:
Between the 3rd pair of electrode, form current potential to suppress described current potential from described first and second pairs of electrodes and extend and to enter in the neutral region.
17, method according to claim 15, the described current potential that forms between described first pair of electrode also makes the ion focusing in the described ion beam.
18, method according to claim 15, described ion beam further comprises neutral corpuscle, described neutral corpuscle is not subjected to the influence from the described current potential of described first and second pairs of electrodes, so that described neutral corpuscle continues to advance and be separated the described ion in described ion beam thus along the initial path of described ion beam substantially.
19, method according to claim 18, described second pair of electrode is between first and second electrodes of described first pair of electrode.
20, method according to claim 19, the gap that described ion beam is advanced and limited by between first and second holes that form in described first and second electrodes respectively, first electrode in described second pair of electrode is arranged in above the described gap and second electrode of described second pair of electrode is positioned at below the described gap.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/370,952 US6777696B1 (en) | 2003-02-21 | 2003-02-21 | Deflecting acceleration/deceleration gap |
| US10/370,952 | 2003-02-21 | ||
| PCT/US2004/005200 WO2004077479A2 (en) | 2003-02-21 | 2004-02-20 | Deflecting acceleration/deceleration gap |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1777972A true CN1777972A (en) | 2006-05-24 |
| CN1777972B CN1777972B (en) | 2010-06-09 |
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|---|---|---|---|
| CN2004800106937A Expired - Lifetime CN1777972B (en) | 2003-02-21 | 2004-02-20 | Deflecting acceleration/deceleration gap |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6777696B1 (en) |
| EP (1) | EP1597748A2 (en) |
| JP (1) | JP5120598B2 (en) |
| KR (1) | KR101130411B1 (en) |
| CN (1) | CN1777972B (en) |
| TW (1) | TWI327335B (en) |
| WO (1) | WO2004077479A2 (en) |
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|---|---|---|---|---|
| CN102160139A (en) * | 2008-09-17 | 2011-08-17 | 艾克塞利斯科技公司 | Adjustable deflection optics for ion implantation |
| CN102264187A (en) * | 2010-05-26 | 2011-11-30 | 住友重机械工业株式会社 | Accelerator and cyclotron |
| CN102264187B (en) * | 2010-05-26 | 2014-06-25 | 住友重机械工业株式会社 | Accelerator and cyclotron |
| CN103779164A (en) * | 2013-11-08 | 2014-05-07 | 北京中科信电子装备有限公司 | Ion beam speed reducing device |
| CN103779164B (en) * | 2013-11-08 | 2015-12-02 | 北京中科信电子装备有限公司 | A kind of beam deceleration device |
| CN106133872A (en) * | 2014-01-15 | 2016-11-16 | 艾克塞利斯科技公司 | Ion implant systems and the method with variable energy control |
| CN106133872B (en) * | 2014-01-15 | 2018-08-31 | 艾克塞利斯科技公司 | Ion implant systems and the method controlled with variable energy |
| CN117438265A (en) * | 2023-11-27 | 2024-01-23 | 青岛四方思锐智能技术有限公司 | Speed regulation deflection assembly and ion implanter |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060007002A (en) | 2006-01-23 |
| WO2004077479A3 (en) | 2005-06-30 |
| EP1597748A2 (en) | 2005-11-23 |
| JP5120598B2 (en) | 2013-01-16 |
| KR101130411B1 (en) | 2012-03-27 |
| CN1777972B (en) | 2010-06-09 |
| JP2006518916A (en) | 2006-08-17 |
| TW200416769A (en) | 2004-09-01 |
| US6777696B1 (en) | 2004-08-17 |
| TWI327335B (en) | 2010-07-11 |
| WO2004077479A2 (en) | 2004-09-10 |
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