CN1791961A - High resolution separation magnet for ribbon beam ion implanters - Google Patents

Abstract

A mass analyzer for a ribbon shaped ion beam is disclosed. The mass analyzer comprises a pair of coils that define an entrance end and an exit end of the analyzer. Field clamps are employed at or proximate to one or more of the entrance and exit ends of the mass analyzer. The field clamps operate to terminate fringing fields close to the entrance and exit ends of the mass analyzer, thereby reducing the impact of such fringing fields on the ribbon beam and improving beam uniformity.

Description

The high resolution separation magnet that is used for the ribbon beam ion injector

Technical field

The present invention is generally relate to ion implant systems, and more particularly, relevant for a kind of mass analyzer and the method relevant with the quality analysis ribbon ion beam.

Background technology

Ion implant systems is used in the integrated circuit manufacturing and mixes impurity to semiconductor.In this type systematic, a kind of dopant elements of wanting of an ion source ionization, this dopant elements is taken from this ion source with the ion beam form.This ion beam typically can carry out quality analysis with the ion that selection has the charge-to-mass ratio of wanting, and then at the semiconductor wafer surface this dopant elements is injected this wafer.The ion of this beam passes this wafer surface, for example to form the conductance zone of wanting in the transistor unit manufacturing in wafer.Typical ion implanter comprises in order to producing ion source, the beamline of ion beam, and it comprises and utilizes magnetic field to resolve the mass analysis apparatus of this ion beam with quality and comprise the semiconductor wafer that will inject via this ion beam or the target chamber of workpiece.

Typical ion beam implanter comprises the ion source that produces positive charged ions in the ionizable source material.The ion that is produced forms an ion beam and is led to injection station along a predetermined course of the beam.This ion beam implanter can comprise extend this ion source and this injection station between the beam shaping structure.These beam shaping structures are kept this ion beam and are determined that this beam is passed through and wherein arrive an elongated inner chamber or a passage of this injection station.

Influence ion with respect to the mass of ion (for example, charge-to-mass ratio) of electric charge on it and radially reached the degree that horizontal two directions are quickened by an electrostatic field or magnetic field.Therefore, the beam of wanting the zone that arrives semiconductor wafer or other target can be made into very pure, can be deflected to the injection of avoiding the non-material of wanting away from the position of this beam because have the ion of molecular weight not.Selectivity is separately wanted and the process of the ion of the charge-to-mass ratio do not wanted is known as quality analysis.Mass analyzer typically utilizes the mass analysis magnets that produces bipolar field, and to turn to all kinds of ion deflectings in the ion beam by magnet in an arcuate channels, this will separate the ion of different charge-to-mass ratios effectively.

In order to reach desired injection in the application-specific, ion dose that these are injected into and energy can be adjusted.This ion dose is controlled a kind of injection ion concentration of specific semi-conducting material.Typically, high electric current injector is used to high dose and injects, and middle electric current injector is used in the application than low dosage.This ion energy is used to control the junction depth in the semiconductor element, and wherein the ion of the energy level of these beam ion decision in this semiconductor or other base material injects degree wherein or these have injected the degree of depth of ion.Constantly the tendency towards less semiconductor element needs a mechanism with low-yield transmission high beam current.This high beam current provides these required dosage levels, and this low-yieldly allows to carry out shallow injection.

In most prior art system, ion inject to use pencil-type ion beam, and wherein, a beam that is rather narrow is produced by ion source and carry out quality analysis, follow-up beam adjustment and scanning before the arrival workpiece.Yet many present application all wish to obtain having the shallow injection of quite highly doped substrate concentration in the shallow source/drain regions of for example semiconductor manufacturing.For the ion injection of the shallow degree of depth, what want is high electric current, low-energy ion beam.Under such situation, reduce ion energy and can allow the convergence of keeping this ion beam that some difficulties are arranged, because contain identical charges ion mutual repulsion effect to each other.The ion that high current ion beam typically comprises the same electric charge of band of high concentration tends to disperse because of mutual repulsion effect.A solution of the problems referred to above replaces pencil-type ion beam for using ribbon ion beam.An advantage of this ribbon-shaped beam is that the cross-sectional area of this beam is much larger than this pencil-type beam.For example, a typical pencil beam has the diameter of about 1-5 centimetre, and wherein, a ribbon-shaped beam can have height and about 40 centimeters width of about 1-5 centimetre.Utilize this big a lot of beam zone, in fact a specific beam current has little a lot of current density, and this beam has a lower electrical conductivity.Yet, use ribbon-shaped beam that more relative distinctive challenges are arranged.

In ion implant systems, to still having required in order to the ribbon beam ion injected system that an even ribbon-shaped beam is provided at workpiece.

Summary of the invention

Summary is below proposed so that the basic understanding to one or more aspect of the present invention to be provided.This summary is not an extensive overview of the present invention, also leaves no choice but indicate key of the present invention or importance element, neither determine its scope.But the main purpose of this summary is to represent some aspect of the present invention in simplified form as the preorder that is described in more detail that the back proposed.

The present invention is directed to a kind of being operable to produces a ribbon ion beam and guides the ion implant systems of this beam towards a workpiece along a beamline path.This injected system comprise one can be operable to receive this ribbon ion beam and along this beam of an arched path deflection so that it is carried out the mass analyzer of quality analysis.Mass analyzer of the present invention is configured to carry out this quality analysis with minimal beam distortion.

According to an aspect of the present invention, disclose a kind of ribbon beam ion injected system, it has a ribbon beam ion source, a quality analysis system and a terminal station.This quality analysis system has an arrival end and a port of export, and can be operated to have the selected ion of wanting the charge-to-mass ratio value along this arrival end certainly to this ribbon-shaped beam of predetermined arcuate path deflection of this port of export.This quality analysis system comprises that further one is positioned near both field clamps of this arrival end, this port of export or this gateway end.This clamp can be operable to basic termination each fringing field relevant with this quality analysis system, thereby reduces beam distortion and improve beam uniformity.

In the present invention on the other hand, this clamp comprises a pair of strong magnetic spare that extends with the corresponding direction of this ribbon beam width.When strong magnetic spare such as for example iron was positioned at this quality analysis system arrival end, it was done in order to preventing that substantially each fringing field from extending beyond this clamp, thereby significantly reduces these fringing field scopes at this mass analyzer arrival end.Therefore, be reduced in this mass analyzer arrival end ribbon beam distortion relevant with fringing field.Similarly, a pair of strong magnetic spare that extends in this ribbon beam width direction can be positioned at the port of export near this mass analyzer, and can be operable to and prevent that fringing field from extending beyond this clamp from the port of export of this quality analysis system.Therefore, reduce these fringing field scopes widely, thereby reduce relevant therewith beam distortion and the ribbon-shaped beam uniformity of improvement is provided from this quality analysis system port of export.

In further aspect of the present invention, this quality analysis system comprises that a pair of arch is extended and definite coil of relevant beamline path therewith.First coil of this centering is positioned at this and extends above beam and along its whole width, and second coil of this centering is positioned at below this beam and the while extends along this whole width.By in these coils, producing electric current, bipolar field result from these coils between, with along this arched path operation with these ions wanted in this beam of deflection.At the ambipolar field along between the coil of this beamline path is basic evenly the time, and fringing field is because along the magnetic field gradient of this beamline path and certainly this arrival end and this port of export extend.This fringing field may have along horizontal, the uneven component of this beam width and may do in order to produce beam distortion along this width.These clamps of operation the present invention are to stop these fringing fields near this inlet and the port of export respectively basically.So, the ribbon-shaped beam of advancing along this beamline path only be exposed to basically one section of fringing field less during, thereby the distortion relevant with this fringing field significantly reduces.

In another aspect of the invention, one or more right secondary coil cooperates these main coils to use, and wherein, these secondary coils also extend along this arcuate channels.This one or more can cover these above main coil or can extend so that further field compensation to be provided to secondary coil along the sidewall sections of this guiding element spare.In certain example, this beam uniformity determining function at this workpiece place that is compensated for as, wherein, much regardless of the influence minimizing of this fringing field due to these clamps, still carry out this compensation to compensate ribbon beam distortion because of for example fringing field or other factors were produced.

In another aspect of the invention, a kind of method of quality analysis one ribbon-shaped beam is disclosed.This method comprises generation one ribbon ion beam and transmits this beam along a beamline path.One bipolar field produces along this beamline path, with according to a charge-to-mass ratio value of wanting selected ion in this ribbon-shaped beam of predetermined arcuate path upper deflecting.The fringing field relevant with at least one inlet of this bipolar field or exit portion is reduced, to prevent relevant therewith beam distortion.In certain example, by the field clamp being arranged on inlet and outlet near this bipolar field, to reduce these fringing fields, so that a ribbon-shaped beam of advancing along this beamline path only be exposed to one section short of this fringing field during, thereby reduce relevant therewith beam distortion and the ribbon-shaped beam uniformity of improvement be provided.

Address related objective for before finishing, the following describes and the present invention of accompanying drawing detailed description some demonstration aspect and enforcement.These only point out several different modes that the principle of the invention can be used.Doing in conjunction with these accompanying drawings when considering, during others of the present invention, advantage and new feature can describe in detail below the present invention and become apparent.

Description of drawings

Fig. 1 one or more aspect according to the present invention illustrates the schematic block diagram of each assembly of exemplary ion injected system.

The schematic diagram of the ion implant systems of the low-energy type of the various aspects of the practicable the present invention of Fig. 2.

The schematic diagram of the ion implant systems of the middle current type of the various aspects of the practicable the present invention of Fig. 3.

The plan view from above of the beam guide of Fig. 4 exemplary mass analyzer according to an aspect of the present invention.

The figure of the fringing field that the interior bipolar field of Fig. 5 explanation and a mass analyzer is relevant.

The stereogram of Fig. 6 exemplary ribbon beam according to an aspect of the present invention.

Fig. 7 illustrate according to the present invention a clamp for a mass analyzer in the figure of influence of bipolar field relevant edge field.

Fig. 8 stereogram that is used for the exemplary mass analyzer of ribbon-shaped beam according to a further aspect of the invention.

Fig. 9 is the sectional side view of the first side of this exemplary mass analyzer among Fig. 8.

Figure 10 is the sectional side view of the second side of this mass analyzer among Fig. 8.

The exemplary mass analyzer profile that is used for ribbon-shaped beam that Figure 11 A is intercepted for the lines 11A-11A in Figure 10.

The exemplary mass analyzer profile that is used for ribbon-shaped beam that Figure 11 B is intercepted for the lines 11B-11B in Fig. 8.

A Figure 12 A and 12B main coil of explanation and one or the section end view of the exemplary mass analyzer of many group time coils according to a further aspect of the invention.

Figure 13 is according to the flow chart of another aspect of the invention explanation in order to the method for quality analysis one ribbon ion beam.

Embodiment

The present invention does explanation referring now to these accompanying drawings, and wherein, like numerals will is used for reference to like in the full text.These explanations and the following describes be in essence the demonstration and non-limiting.Therefore, the variation example of the system and method that should be appreciated that these explanations and other this enforcement except that these explanations herein is considered as falling in the category of the present invention and appended claim.

The present invention is relevant for a kind of system and method for quality analysis ribbon ion beam.Beam distortion is reduced, so that produces the beam uniformity that improves along its width via one of the inlet that reduces this mass analyzer and port of export or the fringing field scope among both.The minimizing of fringing field is to get near its inlet and the port of export by a clamp is set.These clamps terminate in the fringing field at this place basically, thereby prevent this from this mass analyzer extension and above these clamps.So, the ribbon-shaped beam of advancing along this beamline path with a specific beam transfer rate only is exposed to one period that has in fact reduced with respect to legacy system in this fringing field, therefore, because the beam distortion due to this fringing field is reduced.The present invention further is worth will have further understanding according to following detailed description together with its various aspects.

Please refer to Fig. 1 at first, be suitable for implementing the ion implant systems 10 of one or more aspect of the present invention with block diagram form explanation one.This system 10 comprises the ion source 12 that produces an ion beam 14 along course of the beam.This ion source 12 for example comprises a plasma source 16 with a line related 18.This plasma source 16 for example can comprise that one therefrom takes out the plasma confinement cells of ion beam.The beam of this taking-up comprises that one for example has wide about 400 millimeters ribbon ion beam, in order to inject one 300 millimeters semiconductor wafer.One exemplary ribbon beam that can cooperate the present invention to use is disclosed in application on May 1st, 2002 and transference is given in assignee of the present invention's the US application serial No. 10/136,047, at this it is integrated reference in full in the lump.

The downstream that one beamline 11 is arranged at this ion source 12 is to receive the ribbon-shaped beam 14 from wherein.This beamline 11 can comprise a mass analyzer 22, a deceleration system 26 and a deflector system 28.This beamline 11 is settled to receive this beam 14 along this path.This mass analyzer 22 comprises a generation component, a magnet (not shown) for example, and can operating so that a field of crossing over this course of the beam to be provided, by this according to the charge-to-mass ratio value deflection of each ion from the ion of this ion beam 14 to different tracks.The ion that penetrates this magnetic field stands an active force, and its guiding has the ion of the quality of wanting and follows this course of the beam, and the ion that deflection has a quality not leaves this course of the beam.

This beamline 11 can comprise further that a may command and alternative operation are to change the slowdown module 26 of the energy relevant with this ribbon-shaped beam.For example, under medium energy, do not need very big change ribbon-shaped beam energy, and this module allows this ribbon-shaped beam penetrate that wherein and not great changes have taken place.In addition, in low energy applications (for example, in order to form shallow junction in the semiconductor body), perhaps the energy of this ribbon-shaped beam needs to be decelerated.In this environment, can operate this slowdown module 26 and reduce the energy level that this beam energy to one is wanted with deceleration by it.

This beamline can comprise further that a deflection system 28 is for example to be used for low energy systems, to slow down earlier before injecting a workpiece.This deflection system 28 for example is to comprise deflecting electrode, leaves this beamline with this ion beam of deflection, thereby removes from this ribbon-shaped beam and may become the neutral particle (because they can't deflection in a deflection field) of energy contamination thing in others.

Please continue also to be set in this system 10, to receive from quality analysis and the ion beam 14 that is cleaned substantially in this beamline 11 with reference to figure 1, one terminal station 30.It for example is one or more workpiece that utilizes the semiconductor wafer (not shown) that this ribbon ion beam 14 injects along this course of the beam (yet, certainly should former beamline be shifted because of this deflector 28) that this terminal station 30 is supported.What please note is, this terminal station considers and use wherein many workpiece to be rotated batch system by this ribbon-shaped beam, or wherein single workpiece scanning is passed through this ribbon-shaped beam maybe with the single workpiece end station of scanned this workpiece of this ribbon-shaped beam.

Please also refer to Fig. 2, illustrate in greater detail an exemplary low energy ion injector 100 so that understand each side of the present invention.This injector 100 has an ion source 112, a mass analysis magnets 114, a beamline 115 and a target or terminal station 116.One can allow this terminal station 116 connect this terminal station 116 and this beamline 115 relative to the bellows type assembly 118 that this beamline 115 moves.Though Fig. 2 illustrates ultra-low calorie (ULE) ion implanter, as what understood, the present invention also can be applicable to the injector of other type.

This ion source 112 comprises a plasma chamber 120 and an ion extractor assembly 122.Energy system sends a kind of ionizable dopant gas to, to produce ion in this plasma chamber 120.Substantially, though the present invention can be applicable to produce cation herein in the system that anion produced by this source 112.These cations comprise that by one the ion extractor assembly 122 of plurality of electrodes 127 is taken out by the finedraw in this plasma chamber 120.Therefore, acting as in this plasma chamber 120 of this ion extractor assembly 122 taken out a positive ion beam 128 and the ion of these taking-ups accelerated to this mass analysis magnets 114.

The acting as of this mass analysis magnets 114 only allows ion with suitable charge-to-mass ratio value by to the beamline 115 that comprises a resolver housings 123 and a beam neutralizer 124.This mass analysis magnets 114 is included in a curved beam path 129 that has in the determined passage 139 of the beam guide of sidewall 130 by, and its emptying is provided by a vacuum pump 131.129 ion beams 128 that transmit are subjected to the magnetic field that this mass analysis magnets 114 produced along this path influences and the ion of the unaccommodated charge-to-mass ratio value of rejection.Intensity of this bipolar field and direction are controlled electronic component 132 and control, to adjust electric current by a magnet connector 133 via the field coil winding of this magnet 114.

This bipolar field makes this ion beam 128 move to second or the exit track 135 near this parsing housing 123 along this curved beam path 129 from first or the entrance track 134 near this ion source 112.By the part 128 of the beam 128 that the ion with unaccommodated charge-to-mass ratio value constituted ' and 128 " departed from this warp rail and enter in the wall of an aluminium beam guide 130.In the manner, 114 of this magnets allow those ions that have the charge-to-mass ratio value of wanting in this beam 128 by arriving this parsing housing 123.

It for example is the dosage indicator of faraday's flag 142 in order to the electrostatic lens 138 and of assembling this ion beam 128 that this resolver housings 123 comprises a terminal electrode 137.This beam neutralizer 124 comprises a plasma spray thrower 145 in order to this positive charge that neutralizes, otherwise this positive charge can be accumulated on this target wafer because this positive beam of charged ions 128 injects.This beam neutralizer and resolver housings are by 143 emptyings of a vacuum pump.

The downstream of this beam neutralizer 124 is this terminal station 116, and it comprises the workpiece a dishful of shape chip support 144 thereon that the processed wafer of desire for example is installed.This chip support 144 is located in substantially vertical orientation in a target plane of this injection beam direction.Dish shape chip support 144 in this terminal station 116 is rotated by a motor 146.Therefore, this ion beam clashes into the wafer that is mounted on this support when they are displaced in the cyclic path.Rotate around the point 162 in this ion beam path 164 and this wafer W crosspoint in this terminal station 116, thereby make this some adjustment relatively of this target plane.Though Fig. 2 illustrates one batch of type of process system, should be appreciated that, the present invention also can be applicable to the treatment system of single wafer type.

Fig. 3 illustrates another ion implant systems 262, and for example, one is applicable to the middle current system of implementing one or more aspect of the present invention.This system 262 comprises a modular gas box 264, an auxiliary gas box 266 and gas cabinet distant place ventilation control panel 268.This gas cabinet 264,268 especially comprises one or more gas of a dopant substance, and this gas cabinet 264,268 helps selectivity to transmit in the ion source 282 of this gas or these gas life-savings to this system 262, wherein, this gas or these gas can be ionized to produce and be fit to optionally bring into this system 262 to inject the ion of wafer or workpiece.This gas cabinet distant place control panel 268 helps according to needs or discharging of wanting or takes a breath gas or other material to this system 262.

Be provided with high-pressure side power distribution 272 and a high voltage isolating transformer 274 excites and bestow energy to dopant gas with special incoming call, in gas, to produce ion.Being provided with an ion beam extraction assembly 276 enters one and comprises in the beamline 278 of mass analysis magnets 280 to take out ion in this ion source 282 certainly and to accelerate them.This mass analysis magnets 280 can be operated to choose or to refuse the ion of inappropriate charge-to-mass ratio value.Especially, utilize one or more magnetic field that magnet produced of this mass analysis magnets 280 and when conducting by this beam guide at them, this mass analysis magnets 280 comprises having allows quality not to the ion collision of the electric charge ratio beam guide in wherein crooked sidewall.

The angle of one assembly 284 with this ion beam of assistance control can be set, yet eigen may not that the beam of ribbon type is necessary.This especially can comprise one scan angle correct lens.One acceleration/deceleration column 286 helps to control and adjust the ion velocity and/or the focusing of this ion beam.For example final energy filter disc can be set, and it can be operated with the assembly 288 that leaches contaminate particulate, attaches wafer or workpiece to reduce the energy contamination particulate.

Wafer or workpiece 290 are loaded in the end station chamber 292 in order to the injection ion selected.One mechanical scan drive unit 294 is handled the wafer in this chamber 292, meets to encourage with the selectivity of this beam.This wafer or workpiece 290 move in this end station chamber 292 by a wafer processing process 296 that comprises one or more machinery for example or robot arm 297.One operator's console 298 allows that the operator can adjust this injection handling procedure by one or more assembly of this system 262 of Selective Control.At last, be provided with a power distribution panel 299 and give this whole system 262 with power supply.

Fig. 4 is the mass analyzer beam guide 300 that the property a simplified demonstration of using for an ion implant systems (for example, the analyzer 280 of the analyzer 114 of the analyzer 12 of Fig. 1, Fig. 2 or Fig. 3) is described according to an aspect of the present invention.This beam guide 300 has by inside and outside arch top and base wall 304 and 306 determined arch vertical passages 302 along an ion beam path 308.This beam guide 300 extends longitudinally to a port of export 312 from an arrival end 310 along this path 308 by the arc angle of for example about 135 degree.This beam guide 300 comprises a mass analysis magnets again, and it can comprise a pair of coil (not being shown among Fig. 4) so that a bipolar field to be provided in passage 302, and it makes the ion of selected charge-to-mass ratio value to arrive this port of export 312 along this path 308.

Be still with reference to figure 4, mass analyzer 300 of the present invention comprises one or more clamp 314,316 that is located in respectively near this analyzer arrival end 310 and/or this port of export 312.Operate this clamp 314,316 to stop basically and the relevant fringing field (not shown) of bipolar field in this passage.As a result, any this fringing field is all shunted effectively there, and the scope that this field extends in this arrival end 310 and this port of export 312 outsides is greatly diminished.The reduction of this fringing field will be as below will reducing ribbon beam distortion as the more complete understanding.

Take turns to Fig. 5, it provides a figure 330 with the explanation magnetic field relevant with Fig. 4 mass analyzer 300, wherein, " Z " representative this passage 302 in along the beam direction of transfer of course of the beam 308, and the BY representative oneself in order to the absolute value in the magnetic field of gained in the coil that produces this ambipolar field.What please note is that between the arrival end 310 in this mass analyzer 300 and the port of export 312, it is uniform that this magnetic field is actually.Yet, before this arrival end 310 a certain regional 332 and behind this port of export 312 a certain regional 334 in, this magnetic field is along these path 308 decay and comprise a gradient dBy/dz, wherein this gradient is the function of distance 336,338, and the magnetic field that exceeds distance 336,338 is actually insignificant.The magnetic field that this degradation subtracts is a fringing field.Inventor of the present invention recognizes that the fringing field relevant with ambipolar field in this mass analyzer is a reason of beam distortion, and recognize that further this fringing field possibly can't be eliminated, but this effect for ribbon beam distortion can be reduced widely according to the present invention.

Understand as these inventors, (Maxwell ' s) equation illustrates that this gradient dBy/dz is the variation magnetic field in the space, and it produces the field component of dBz/dy, and so, these fringing fields also have a horizontal inhomogeneous component in the Maxwell.As a result, when this ribbon-shaped beam when this course of the beam 308 advances, these fringing fields are done to twist this ribbon-shaped beam unevenly in order to width or " Y " direction along it as illustrated in fig. 6.

Therefore, via using near the inlet of this mass analyzer 300 and the field clamp 314,316 of the port of export 310,312, these fringing field scopes are reduced.For example with reference to figure 4 and Fig. 7, if these clamps 314,316 lay respectively at apart from certain of this inlet and outlet apart from 340a, 340b place, and this shorter than these fringing fields (Fig. 7) place distance 336,338 that decays naturally apart from 340a, 340b, then beam distortion is reduced.Therefore, if this ribbon-shaped beam is just being advanced with a specific average speed and zone with relative fringing field is reduced (340a, 340b＜336,338), then this beam is reduced by the time of these fringing fields significantly, thereby the minimizing beam distortion is also improved the beam uniformity along this beam width.Supervise in this, make this as much as possible little apart from 340a, 340b, wherein, this distance is subject to the saturability of this clamp material at last.Therefore, allow as close as possible this analyzer inlet of these clamps and the port of export locate, and do not make these clamps become saturated.As understand, this distance can change according to the field intensity in employed material in this clamp and this mass analyzer.

Take turns to Fig. 8-11B now, a mass analyzer system 400 is illustrated, and wherein this system is configured to quality analysis one ribbon ion beam.In an example, it for example is aforementioned ionogenic ion source that a ribbon-shaped beam is received from one.Mass analyzer 400 in this example is configured to the ribbon-shaped beam of one 300 millimeters semiconductor wafers of quality analysis, thereby this ribbon-shaped beam can have about 400 a millimeters width, and this mass analyzer can have about 600 a millimeters width.

Mass analyzer 400 in this example comprises a pair of coil 402, wherein, first coil (or the top winding 402a in direction shown in this) is positioned on second coil (or bottom coil) 402b, dispose a course of the beam 404 therebetween, and each since extending, an arrival end 403a penetrates wherein to a port of export 403b.Each coil 402 all extends to the same distance far away with this ribbon-shaped beam at least on a Width 406, and is preferably more farther than this ribbon beam width.Please refer to Fig. 9 and 11A-11B, each coil 402 can comprise an arch yoke 408, and it has one or more conductor, in order to for example along the arch of this yoke and be parallel to substantially this course of the beam 404 vertically on be wrapped in around it.When electric current flow through these coils 402, a bipolar field 410 resulted from the space 412 between these coils with vertical with the direction of transfer of this ribbon-shaped beam (it is consistent with this arch course of the beam 404 substantially) substantially direction.

Please refer to Fig. 8 and Fig. 9, the coil 402 that extend this side is determined the side opposite side 414 of this mass analyzer 400.Be configured in one of these sides 414a go up and be positioned these coils 402 and 402b between be that an arch is extended and the sidewall 420 of electric insulation.The conductive segment 422a and the 422b that on this sidewall 420, have two arches to extend.Though these sections 422 itself conduct electricity, these sections are electric insulation to each other.On each section 422, plurality of electrodes 424a, 424b be along this arched path longitudinal extension, and wherein, these electrodes 424 are serially connected along the road.Though being expressed as the section of plurality of separate elements by separately, these electrodes 424 422 are electrically connected, but should be appreciated that each electrode 424 can comprise conducting element and other structure that single arch is extended, and this alternative is considered as falling within the scope of the invention.

It for example is the power supply (not shown) of radio-frequency power supply that these electrodes 424a and 424b are coupled to one, thus under bias voltage, an electric field with substantially perpendicular to the direction of this course of the beam 404 be formed at these electrodes 424a and 424b between.In an example, these electrodes 424 can use in conjunction with the bipolar field 410 in this space 412 (it is perpendicular to this electric field), with in the electronics capture area that wherein produces a similar magnetron (magnetron) structure.As above-mentioned, a kind of gas of the electronic impact during these move (for example residual source gas such as xenon or a kind of input source gas) is so that its ionization produces a plasma.

In the present invention on the other hand, these electrodes 424 also are the magnet (see figure 9)s, and wherein, each magnet 424 has a relative arctic and a South Pole.For example, among first section 422a in this amplification region 423, make their each utmost point alignment of these magnets so that the inside magnet 424b on another conductive segment 422b of the north pole face of each magnet, and make south face outwards deviate from this another magnet 424b.In this second section 422b, make the utmost point alignment of these magnets similarly, yet the north pole face of each magnet 424b is the magnet 424a on this first conductive segment 422a inwardly, and make south face outwards deviate from this magnet 424a again.Utilize this structure, the effect of these magnets is as multi-stylus head magnet, and it can be operated with generation and extend in this arcuate channels multi-stylus first show towards this course of the beam 404.Though a kind of structure is shown among Fig. 9, should be appreciated that this pole orientation can reverse exchange, wherein, these south face inwardly and these north pole faces are outside, and this present invention of changing into considered.

The multi-stylus head magnetic field that these magnets 424 are produced has the part of these electric fields that produced perpendicular to these electrodes 424.By these electrodes being used as magnet and the multi-stylus first show being used as this magnetic field producer, these multi-stylus first shows can be trimmed with the Ionized efficient that maximizes as is understood, and do not influence the mass analysis function of this magnetic dipole field 410.In addition, by these electrodes are used (both are similar structures this electric field generator and this magnetic field producer) as magnet, this design can be simplified.

The plasmas that produced in this mass analyzer 400 are can be easily mobile along the magnetic field line of these for example relevant with this ambipolar field 410 field wires, and it points in Fig. 9 in this page or leaf and perpendicular to this ribbon-shaped beam.So, the plasma that is produced forms in a quite uniform mode and then can spread along these dipole field lines easily along this arcuate channels and spread all over the width 406 of this beam guide, spreads all over the basic homogeneous plasma of this ribbon beam width to provide one.So, this ribbon-shaped beam space charge neutralization that is taken place helps to spread all over equably its width.

Please refer to now to Fig. 8 and Figure 10, on the opposite side of this beam guide 400 the first side wall 414a, the second sidewall 414b of an electric insulation extend this first and second coil 402a, 402b between.This second sidewall 414b comprises that one has the arch extension 430 of the plurality of magnets of configuration along the line.These magnets 432 along this section 430 so that these magnets dispose facing to the frame modes of these magnets 424 rotations of the section 422 on this first side wall 420 to be close to 90 degree.In addition, these magnets 432 are configured to make the arctic of a magnet to be oriented to the South Pole of an adjacent magnets as illustrated in fig. 10.Allow second group of magnet 432 help to change the phase place of the multi-stylus first show on these opposite sides facing to these magnet 424 rotations.When plasma is crossed this ribbon-shaped beam towards with formed these multi-stylus first shows of these magnets 432 time along 410 diffusions of these dipole field lines, the phase change between these sides stops or slows down the formation that the uneven neutral zone of plasma wherein takes place greatly.

Still please refer to Fig. 8-11B, a pair of clamp 450a, 450b are positioned at the arrival end 403a and the port of export 403b place of close this analyzer.These clamps 450 comprise that one for example is the strong magnetic material of iron, and can operate with basic terminating edge field and stop this field to extend beyond these clamps by this.In this example, these clamps 450 comprise ironware or the iron staff that extends along the Width 406 of this analyzer 400 and ribbon-shaped beam, make these fringing fields be stopped equably along this beam width.The field clamp 450 of each end will separate to make this beam therebetween penetrable each other via a clamp bracket 454.Or these clamps 450 can comprise a horseshoe configuration, wherein this width 406 of part extend through and one or the two side part link together.Can use any clamp structure, and this structure is considered as falling into the scope of the invention.

Take turns now to Figure 12 A and 12B, except that being used in main coil (402a, 402b) in this ambipolar field and making the use clamp reducing because of the distortion due to the fringing field, mass analyzer of the present invention also further comprises one or organize the beam distortion that secondary coil detects or anticipates with further compensation more.For example, shown in Figure 12 A, it provides research its port of export 403a but does not draw the reduced graph of the mass analyzer 400 of these clamps.This analyzer rotates to be close to 90 degree with respect to the direction among Fig. 8-10 in this figure, and comprises having this first and second coil 402a, 402b to determine this course of the beam 404 and the top in this space 412 and the yoke 408 of bottom.Operate these main coil 402a, 402b in this space 412, to produce ambipolar field.

As above-mentioned, these clamp (not shown) work are to reduce the fringing field scope of being launched from the inlet and the port of export of this mass analyzer.These clamp work also improve beam uniformity with minimizing by this along the beam distortion on its width.Yet, if when wanting extra beam uniformity, for example the beam uniformity on the workpiece can be detected and be analyzed, and is fed back to the one group of secondary coil 480 that is for example provided along pairing analyzer 400 sidewalls of the remote edge of this ribbon-shaped beam by a controller (not shown) again.Preferably, coil 480a and the 480b that is positioned on the opposing sidewalls is controlled to isolate with coil 402a and 402b respectively.Especially, can distinguish control coil 402a and 402b, so that difference between current produces the field component of one or four utmost points.In this case, control coil 480a and 480b are so that the total current-turns product in this magnet frame is zero.This condition in this example is essential, with the magnetic density that prevents to exceed the quata in this main material.In a preferred embodiment, coil 480a and 480b are twining and the coil 402a and the identical number of turn of 402b, promote the zero flux condition to utilize various simple power supply unit connected modes.

In the another alternative shown in Figure 12 B, another group secondary coil can comprise up and down two groups of secondary coil 484a, 484b and 486a, 486b, and it is superimposed upon on this main coil 402a, 402b.Enable another degree of freedom to afford redress in this configuration, wherein, each coil can independently be controlled, with according to providing the ambipolar field correction near detected beam uniformity on this workpiece or this workpiece.

According to another aspect of the invention, provide as shown in figure 13 and label is appointed as the method for a kind of quality analysis ribbon-shaped beam of 500.Though after this this method 500 shows with a series of actions or incident and illustrate, should be appreciated that the present invention is not subjected to that order limits shown in this action or the incident.For example, some moves except that those order shown here and/or described, also can take place with different order and/or follow other action or incident to take place simultaneously in one or more aspect according to the present invention.In addition, implementation the method according to this invention does not need the step with all demonstrations.Moreover the method according to this invention can be carried out in conjunction with shown here and described structure and other form and/or operation of not stating structure.

This method starts from step 502, and it is by for example starting aforesaid a pair of coil to produce a bipolar field in this ribbon-shaped beam mass analyzer.This bipolar field work is to come in this ribbon-shaped beam of deflection selected ion to carry out the quality analysis of this ribbon-shaped beam along a predetermined arcuate path.In step 504, the relevant edge field of this bipolar field is clamped near this mass analyzer place.In an example, the clamp of fringing field is included in one of this mass analyzer arrival end and port of export or both places are provided with a clamp, and wherein, the distance between these clamps and this mass analyzer should be as much as possible little and make these clamps saturated.As a result, emission reduces the scope of this fringing field emission by this near these fringing fields of this mass analyzer arrival end and the port of export are clamped at that.So, the time that the ribbon-shaped beam of crossing these fringing fields is exposed in the field of this generation distortion is greatly reduced, and reduces the amount distortion of this ribbon-shaped beam by this.

In step 506, this ribbon-shaped beam allows mass analyzer use this fringing field clamp, and is detected near this workpiece or this workpiece.For example, can use the testing agency of one or more Faraday cup or other type to detect the ribbon-shaped beam of crossing its width, thereby determine the relative uniformity.This method 500 then carry out step 508, and wherein, one or more secondary coil relevant with this mass analyzer optionally starts according to the detected ribbon-shaped beam uniformity and/or control when needed it is compensated.For example, be relevant to Figure 12 A figure and the emphasis prompting of Figure 12 B institute as the front, one or more secondary coil can be activated and electric current wherein is adjusted respectively, and it is detected any inhomogeneous to cross this ribbon beam width with compensation.In aforesaid way, improve beam uniformity and reach with a ribbon ion beam.

Though the present invention shows some aspects and configuration mode and is illustrated in, should be appreciated that, those skilled in the art will according to alternative or the modification of expecting equivalence of this specification of reading and understanding and accompanying drawing.Especially, about by the performed various functions of said elements (assembly, device, circuit, system, or the like), in order to illustrate that the employed term of this element (comprising the reference to " device ") is unless there is indication in addition, otherwise, even be not that structural equivalents is in the disclosed structure in order to the function of carrying out the present invention's exemplary configuration shown here, it also is any element (just, it is functional equivalence) that will correspond in order to carry out described element proprietary feature.In addition, although open at the present invention's one special characteristic in conjunction with one of some configuration modes, as want and help any give or during application-specific, then this feature can combine with one or more further feature of other execution mode.Moreover these terms " comprise ", " containing ", " having ", " having ", " having " and the various scope that changes example thereof are not to use in this detailed description is exactly to be used in the claim, and the scope that these terms are contained is similar to term and " comprises ".Simultaneously, only represent the meaning of example at this employed term " exemplary ", but not best executor.

Claims (25)

1. ion implant systems, it comprises:

One ion source, it can be operated to produce a ribbon ion beam;

One quality analysis system, its can operate with receive this ribbon ion beam at an arrival end and with this ribbon ion beam in have a charge-to-mass ratio value of wanting ion along a predefined paths deflection to export at a port of export, this quality analysis system also comprises the field clamp that is positioned at one of this arrival end and port of export, this clamp can be operable to and stop a relative fringing field basically, thereby reduces the distortion of this ribbon ion beam; And

One in the terminal station in this quality analysis system downstream, and it supports this work in the time of can being operable to and by this ribbon ion beam one workpiece being injected.

2. the system as claimed in claim 1, wherein, this clamp is included in side upwardly extending two ironwares relevant with this ribbon ion beam width, wherein, this first ironware is positioned at this above ribbon ion beam, and this second ironware is positioned at below this ribbon ion beam.

3. the system as claimed in claim 1, wherein, this quality analysis system comprises that respectively first clamp and that is positioned at this arrival end is positioned at second clamp of this port of export.

4. system as claimed in claim 3, wherein, this first and second clamp respectively is included in side upwardly extending two ironwares relevant with this ribbon ion beam width, wherein, this first ironware is positioned at this above ribbon ion beam, and this second ironware is positioned at below this ribbon ion beam.

5. the system as claimed in claim 1, wherein, this quality analysis system more comprises a pair of coil, disposes a beamline path therebetween, wherein, these coils can be operable to the magnetic field that produces the direction of transfer that is basically perpendicular to this ribbon ion beam when electric current flows through.

6. system as claimed in claim 5, wherein, this extends on the Width of this ribbon ion beam coil, and determines first and second opposed side portions of quality analysis system at arbitrary end of coil.

7. system as claimed in claim 6, it also comprises respectively on this ribbon ion beam short transverse, one first group of secondary coil along this first and second opposite side extension, wherein, this first group of secondary coil operated as four unit coils coil in conjunction with this, with focal length or the collimation of adjusting this ribbon ion beam end.

8. system as claimed in claim 6, it also is included in and extends on the Width of this ribbon ion beam and be superimposed upon this to second group of secondary coil of 1 on the coil, wherein, this second group of secondary coil can be operable to guide current and flow through wherein, and irrelevant to the electric current in the coil, thereby provide for this compensation to the bipolar field between coil with this.

9. system as claimed in claim 8, wherein, this second group of secondary coil comprises a upper set and a below group secondary coil, wherein, this top and below group can be controlled independently so that the compensation for this bipolar field to be provided.

10. mass analyzer, it comprises:

A pair of coil, its arch extend an arrival end and a port of export between, and have an arch beamline path and be disposed at therebetween; And

A clamp, it operationally is coupled to one of the arrival end of these coils and port of export, and can be operable to and stop respectively the fringing field launched from one of the arrival end of these coils and port of export basically.

11. mass analyzer as claimed in claim 10, its also comprise another operationally be coupled to the arrival end of these coils and in the port of export another the field clamp.

12. mass analyzer as claimed in claim 10, wherein, this comprises that to coil one determines first coil at this mass analyzer top and second coil of definite its bottom, wherein, this clamp comprises that first ironware and that is positioned at this first coil arrival end is positioned at second ironware of this second coil arrival end, wherein, this first and second ironware is operable to and terminates in the fringing field that these coil arrival ends are launched basically.

13. mass analyzer as claimed in claim 12, wherein, this first and second coil further extends on the direction that is basically perpendicular to this arch beamline path, and determine the width of this mass analyzer, wherein, this first and second ironware extends at the arrival end of this first and second coil width along this mass analyzer, thereby terminates in the fringing field that these coil arrival ends are launched along this mass analyzer width basically.

14. mass analyzer as claimed in claim 10, wherein, this comprises that to coil one determines first coil at this mass analyzer top and second coil of definite its bottom, wherein, this clamp comprises that first ironware and that is positioned at this first coil port of export is positioned at second ironware of this second coil port of export, wherein, this first and second ironware can be operable to and terminate in the fringing field that these coil ports of export are launched basically.

15. mass analyzer as claimed in claim 14, wherein, this first and second coil further extends on the direction that is basically perpendicular to this arch beamline path, and determine the width of this mass analyzer, wherein, this first and second ironware extends at the port of export of this first and second coil width along this mass analyzer, thereby terminates in the fringing field that these coil ports of export are launched along this mass analyzer width substantially.

16. a method that is used for quality analysis one ribbon ion beam, it comprises:

Producing one is used for along the bipolar field of the intrafascicular selected ion of this ribbon ion of predefined paths deflection; And

Limit the scope of the fringing field relevant with this bipolar field.

17. method as claimed in claim 16, wherein, the scope that limits these fringing fields comprises the fringing field of clamping down in the presumptive area.

18. method as claimed in claim 16, wherein, this bipolar field results from one respectively to have in the mass analyzer of an arrival end and a port of export, and the step that wherein, limits the scope of these fringing fields comprises the scope of the fringing field that restriction is launched from the arrival end and the port of export of this mass analyzer.

19. method as claimed in claim 18, wherein, the scope of these fringing fields comprises clamps down on one near the arrival end of this mass analyzer and the interior fringing field of presumptive area of the port of export.

20. method as claimed in claim 19 wherein, is clamped down on arrival end and clamp of port of export place placement that these fringing fields are included in close this mass analyzer.

21. method as claimed in claim 20, wherein, the distance between the arrival end of this clamp and this mass analyzer or the port of export is enough to avoid the saturated of this clamp.

22. method as claimed in claim 20, wherein, this clamp comprises that one has the ironware of a top and a bottom, and extend along the width of this ribbon ion beam separately this top and bottom, and wherein, this ribbon ion beam penetrates therebetween.

23. method as claimed in claim 16 also comprises the uniformity that detects this ribbon ion beam after limiting the scope of these fringing fields.

24. method as claimed in claim 23, wherein, the uniformity that detects this ribbon ion beam occur in the workpiece place injected with this ribbon ion beam or this workpiece near.

25. method as claimed in claim 23, wherein, this bipolar field is resulted from the mass analyzer, also comprises according to the uniformity of detected ribbon ion beam and controls one or more coil relevant with this mass analyzer.

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