CN1773358A - Method and system for packaging MEMS devices with incorporated getter - Google Patents

Method and system for packaging MEMS devices with incorporated getter Download PDF

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Publication number
CN1773358A
CN1773358A CN 200510105032 CN200510105032A CN1773358A CN 1773358 A CN1773358 A CN 1773358A CN 200510105032 CN200510105032 CN 200510105032 CN 200510105032 A CN200510105032 A CN 200510105032A CN 1773358 A CN1773358 A CN 1773358A
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China
Prior art keywords
seal
getter
mems
substrate
secondary seal
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CN 200510105032
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Chinese (zh)
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洛朗·帕尔玛蒂尔
威廉·J·卡明斯
布莱恩·J·加利
克拉伦斯·徐
马尼什·科塔里
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IDC LLC
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IDC LLC
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Abstract

Methods and systems for packaging MEMS devices such as interferometric modulator arrays are disclosed. One embodiment of a MEMS device package structure 70 includes a seal 78 with a chemically reactive getter. Another embodiment of a MEMS device package 800 comprises a primary seal 805 with a getter, and a secondary seal 804 proximate an outer periphery of the primary seal 805. Yet another embodiment of a MEMS device package 900 comprises a getter 902 positioned inside the MEMS device package 900 and proximate an inner periphery 903 of the package seal 78.

Description

MEMS Apparatus and system with getter, and method for packing
Technical field
Technical field of the present invention relates to MEMS (micro electro mechanical system) (MEMS), and more specifically, relates to the method and system that are used for the package of MEMS device.
Background technology
MEMS (micro electro mechanical system) (MEMS) comprises micromechanical component, driver and electronic component.Micromechanical component can adopt deposition, etching or other several portions that can etch away substrate and/or institute's deposited material layer maybe can add several layers and make with the micromachined technology that forms electricity and electromechanical assembly.One type MEMS device is called as interferometric modulator.Interferometric modulator can comprise the pair of conductive plate, one of them or the two all can be transparent whole or in part and/or be reflectivity, and can relative motion when applying a suitable electric signal.One of them plate can comprise a quiescent layer that is deposited on the substrate, and another plate can comprise a metal partion (metp) that separates by a clearance and this quiescent layer.Said apparatus is with a wide range of applications, and in this technology, utilizes and/or revises the characteristic of these types of devices so that its performance can be used for improving existing product and makes still undeveloped at present new product will be rather useful.
Summary of the invention
System of the present invention, method and device all have many aspects, and arbitrary single aspect all can not determine its desired characteristic separately.Now, its main characteristic is carried out brief discussion, this not delimit the scope of the invention.Checking this argumentation, especially reading title for after the part of " embodiment ", how people provides the advantage that is better than other display device if can understanding feature of the present invention.
One embodiment of the present of invention are a kind of MEMS (micro electro mechanical system) (MEMS) devices.Described MEMS device comprises that a substrate and is formed at the MEMS device on the described substrate.Described device also provides a backboard and a peripheral seal of locating and contacting described substrate and described backboard near described MEMS device, and wherein said seal comprises a chemical reactivity getter.
Another embodiment of the present invention is the method for a kind of sealing one MEMS (micro electro mechanical system) (MEMS) device encapsulation.Described method comprises: a substrate and a backboard are provided, and wherein said substrate comprises a MEMS device formed thereon.Described method comprises that also the periphery near described MEMS device forms a seal, and wherein said seal comprises a chemical reactivity getter.In addition, described method to described substrate, described seal, and described backboard carry out attaching, thus described MEMS device is encapsulated in the encapsulation.
Another embodiment of the present invention is the encapsulation of a kind of MEMS (micro electro mechanical system) of making by a kind of method (MEMS) device.Described method comprises: a substrate and a backboard are provided, and wherein said substrate comprises a MEMS device formed thereon.Described method comprises that also the periphery near described MEMS device forms a seal, and wherein said seal comprises a chemical reactivity getter.In addition, described method to described substrate, described seal, and described backboard carry out attaching, thus described MEMS device is encapsulated in the encapsulation.
An embodiment more of the present invention is a kind of MEMS (micro electro mechanical system) (MEMS) device.This device comprises the transmission member that is used for transmitted light and is used for the modulation member that the light of described transmission member is modulated is passed in transmission.In addition, described device comprises the covering member that is used to cover described modulation member.Described device also comprises the containment member that is used for forming a seal between described transmission member and described covering member and forms a cavity, and wherein said containment member comprises the reactive means that is used for the material chemically reactive that contacts described seal.
Description of drawings
Fig. 1 is first-class axle figure, it shows the part of an embodiment of an interferometric modulator display, wherein one of one first interferometric modulator removable reflection horizon is in an off-position, and a removable reflection horizon of one second interferometric modulator is in an excited target position.
Fig. 2 is a system block diagram, and it shows that one comprises an embodiment of the electronic installation of one 3 * 3 interferometric modulator displays.
Fig. 3 is the removable mirror position of an exemplary embodiment of interferometric modulator shown in Figure 1 and the graph of a relation of the voltage that applies.
Fig. 4 is one group of synoptic diagram that can be used for driving the row and column voltage of interferometric modulator display.
Fig. 5 A and Fig. 5 B show an exemplary sequential chart that can be used for writing to 3 * 3 interferometric modulator displays shown in Figure 2 the row and column signal of a frame of display data.
Fig. 6 A is the sectional view of device shown in Figure 1.
Fig. 6 B is a sectional view of an alternate embodiment of an interferometric modulator.
Fig. 6 C is a sectional view of another alternate embodiment of an interferometric modulator.
Fig. 7 is the sectional view of a basic encapsulating structure of an interferometric devices.
Fig. 8 one has the sectional view of a part of the interferometric modulator encapsulating structure embodiment of a primary seal body and a secondary seal.
Fig. 9 is the sectional view of the part of an interferometric modulator encapsulating structure embodiment, and wherein a getter material is positioned in the described encapsulating structure near seal.
Figure 10 A and 10B are system block diagrams, and it shows that one comprises an embodiment of the visual display unit of a plurality of interferometric modulators.
Embodiment
The embodiment of the MEMS device package of a plurality of hermetically-sealed constructions that comprise improvement hereinafter will be described.In one embodiment, the MEMS device is encapsulated between the backboard and a substrate that combines by a primary seal body.In one embodiment, the primary seal body comprises a chemical reactivity getter.Known in affiliated technical field, getter be a kind of can by for example absorb, absorption or chemical reaction is caught or in conjunction with the material of another kind of material.The chemical reactivity getter be a kind of be configured to be not absorb or the absorption absorbate but with the getter of absorbate generation chemical reaction.In other embodiments, described encapsulating structure comprises a secondary seal that is provided with along outer peripheral edges of primary seal body.In one embodiment, described secondary seal for example comprises hydrophobic material.In another embodiment, described encapsulating structure comprises one near the inner peripheral of described seal location and be configured to absorb and attempt to enter the water vapour of encapsulating structure inside or the getter of pollutant.In described embodiment, can no longer need other getters or drying agent to satisfy the required life-span attribute of packed device, thereby can reduce package dimension and cost.
Hereinafter explanation is at some embodiments of the invention.But, the present invention can implement by being permitted different ways.In this explanation, can be with reference to accompanying drawing, in the accompanying drawings, identical parts use identical number-mark from start to finish.Find out easily that according to following explanation the present invention can be at arbitrary display image-no matter be dynamic image (for example video) or still image (for example rest image) of being configured to, no matter be character image or picture-device in implement.More specifically, the present invention can implement in inferior numerous kinds of electronic installations or is associated with these electronic installations for example (but being not limited to): mobile phone, wireless device, personal digital assistant (PDA), handheld computer or portable computer, gps receiver/omniselector, camera, the MP3 player, video camera, game machine, wrist-watch, clock, counter, TV monitor, flat-panel monitor, computer monitor, automotive displays (for example mileometer display etc.), driving cabin control device and/or display, video camera scenery display (for example rear view camera display of vehicle), electronic photo, electronics billboard or label, projector, building structure, packing and aesthetic structures (for example image display on jewelry).The MEMS device that has similar structures with MEMS device described herein also can be used for non-display application, for example is used for electronic switching device.
Show an interferometric modulator display embodiment who contains an interfere type MEMS display element among Fig. 1.In these devices, pixel is in bright state or dark state.Bright opening (on) or open under (open) state, display element reflexes to the user with most of incident visible light.Be in dark (close (off) or close (closed)) state following time, display element reflects the incident visible light to the user hardly.Decide on different embodiment, can put upside down the light reflectance properties of "on" and "off" state.The MEMS pixel can be configured to mainly reflect under selected color, also can realize colored the demonstration except that black and white.
Fig. 1 is first-class axle figure, and it shows two adjacent pixels in a series of pixels of a visual displays, and wherein each pixel comprises a MEMS interferometric modulator.In certain embodiments, an interferometric modulator display comprises a row/column array that is made of these interferometric modulators.Each interferometric modulator comprises a pair of reflection horizon, and this is positioned to each other to have a variable-sized optical resonance cavity at a distance of a variable and controlled distance at least to form one to the reflection horizon.In one embodiment, one of them reflection horizon can be moved between the two positions.Be referred to herein as on the primary importance of release conditions, the local reflex layer that the position of this displaceable layers distance one is fixed is far away relatively.On the second place, the position of this displaceable layers is more closely near this local reflex layer.Decide position according to removable reflection horizon, from the incident light of this two layers reflection can with mutually long or mutually the mode of disappearing interfere, thereby form the mass reflex or the non-reflective state of each pixel.
The pixel array portion that shows in Fig. 1 comprises two adjacent interferometric modulator 12a and 12b.In the interferometric modulator 12a in left side, demonstration one movably high reflection layer 14a is in an off-position, and this off-position is apart from fixing local reflex layer 16a one preset distance.In the interferometric modulator 12b on right side, demonstration one movably high reflection layer 14b is in an excited target position, and this excited target position is near fixing local reflex layer 16b.
Fixed bed 16a, 16b conduct electricity, the part is transparent and local is reflectivity, and can the layer of one or more respectively do for oneself chromium and tin indium oxides be made by for example depositing on a transparent substrates 20.Described each layer is patterned into parallel band, and can form the column electrode in the display device, as further specifying hereinafter.Displaceable layers 14a, 14b can form by one or more depositing metal layers that is deposited on pillar 18 tops (and column electrode 16a, 16b quadrature) and and be deposited on the series of parallel band that the middle expendable material between the pillar 18 constitutes.After expendable material was etched, these deformable metal levels separated with the air gap 19 of the metal level of fixing by a regulation.These deformable layer can use one to have high conductivity and reflexive material (for example aluminium), and those bands can form the row electrode in the display device.
When not applying voltage, cavity 19 remains between a layer 14a, the 16a, and deformable layer is in the mechanical relaxed state shown in pixel 12a among Fig. 1.Yet after a selected row and column applies potential difference (PD), the capacitor that forms at the respective pixel place of described row and column electrode intersection is recharged, and electrostatic force pulls to these electrodes together.If voltage is enough high, then displaceable layers generation deformation, and be forced on the fixed bed (can on fixed bed, deposit a dielectric material (not shown in this Figure), preventing short circuit, and the control separation distance), shown in the pixel 12b on right side among Fig. 1.Regardless of the potential difference (PD) polarity that is applied, the behavior is all identical.This shows, may command reflection and row/row of non-reflective pixel state encourage to traditional LCD and other display techniques in used row/row encourage similar in many aspects.
Fig. 2 to Fig. 5 shows the example process and the system that use an interferometric modulator array in a display application.Fig. 2 is a system block diagram, and this figure shows that one can embody an embodiment of the electronic installation of each side of the present invention.In this exemplary embodiment, described electronic installation comprises a processor 21-, and it can be any general purpose single-chip or multicore sheet microprocessor, for example ARM, Pentium , Pentium II , PentiumIII , Pentium IV , Pentium Pro, 8051, MIPS , Power PC , ALPHA , or any special microprocessor, for example digital signal processor, microcontroller or programmable gate array.According to convention in the industry, processor 21 can be configured to carry out one or more software modules.Except that carrying out an operating system, also this processor can be configured to carry out one or more software applications, comprise web browser, telephony application, e-mail program or any other software application.
In one embodiment, processor 21 also is configured to communicate with an array controller 22.In one embodiment, array control unit 22 comprises a horizontal drive circuit 24 and the column drive circuit 26 that signal is provided to a pel array 30.Array sectional view shown in Fig. 1 illustrates with line 1-1 in Fig. 2.For the MEMS interferometric modulator, OK/the row excitation protocol can utilize the hysteresis property of these devices shown in Figure 3.It may need the potential difference (PD) of (for example) 10 volts to make a displaceable layers be deformed into actuated state from release conditions.Yet, when described voltage when this value reduces, reduce when being back to below 10 volts at described voltage, described displaceable layers will keep its state.In the exemplary embodiment of Fig. 3, before voltage drop was low to moderate below 2 volts, displaceable layers can not discharge fully.Therefore, in example shown in Figure 3, exist one to be approximately the voltage range that 3-7 lies prostrate, exist one to apply voltage window in this voltage range, described device is stabilized in and discharges or actuated state in this window.Be referred to as " lag windwo " or " stability window " in this article.For an array of display with hysteresis characteristic shown in Figure 3, OK/the row excitation protocol can be designed to be expert at during the gating, the pixel that is energized is applied about 10 a volts voltage difference to selected in current, and to d/d pixel being applied one near 0 volt voltage difference.After gating, it is poor to apply about 5 a volts steady state voltage to pixel, and gating makes its residing state so that its maintenance is expert at.After writing, in this example, each pixel is all born one and is in " stability window " interior potential difference (PD) that 3-7 lies prostrate.This characteristic makes pixel design shown in Figure 1 be stabilized in an existing actuated state or release conditions under the voltage conditions in identical applying.Because each pixel of interferometric modulator, no matter be in actuated state or release conditions, in fact all be one by fixed reflector and capacitor that mobile reflection horizon constituted, therefore, this steady state (SS) can be kept under the voltage in the lag windwo and consumed power hardly.If the current potential that is applied is fixed, then there is not electric current to flow into pixel basically.
In the typical case uses, can be by determining that according to one group of desired actuated pixels in first row one group of row electrode forms a display frame.After this, horizontal pulse is put on the electrode of the 1st row, thereby encourage the pixel corresponding with determined alignment.After this, determined one group of row electrode is become corresponding with desired one group of actuated pixels in second row.After this, with pulse put on the 2nd the row electrode, thereby according to determined row electrode encourage the 2nd the row in respective pixel.The pixel of the 1st row is not subjected to the influence of the pulse of the 2nd row, thereby the state that keeps it to set at the impulse duration of the 1st row.The property mode repeats above-mentioned steps to the row of whole series in order, to form described frame.Usually, repeating this process continuously by the speed with a certain desired frame number/second to refresh and/or upgrade these frames with new video data.Also have a variety of row and the row electrodes that are used to drive pel array also to be known, and can be used for the present invention by people with the agreement that forms display frame.
Fig. 4 and Fig. 5 show a kind of possible excitation protocol that is used for forming a display frame on 3 * 3 arrays shown in Figure 2.Fig. 4 shows one group of possible row and column voltage level of can be used for having the pixel of hysteresis curve shown in Figure 3.In the embodiment of Fig. 4, encourage a pixel to comprise and be set to-V being listed as accordingly Bias' and will go accordingly and be set to+Δ V, it can correspond respectively to-5 volts and reach+5 volts.Discharging pixel then is to be set to+V by being listed as accordingly BiasAnd will go accordingly and be set to identical+Δ V, form one 0 volts potential difference (PD) at described pixel two ends thus and realize.In the row of 0 volt of those wherein capable voltages maintenance, pixel is stable at its initial residing state, and is in+V with these row BiasStill-V BiasIrrelevant.Equally as shown in FIG. 4, should be appreciated that, can use polarity and above-mentioned opposite polarity voltage, for example encourage a pixel to comprise and be set to+V being listed as accordingly Bias, and will go accordingly and be set to-Δ V.In this embodiment, discharging pixel is to be set to-V by being listed as accordingly BiasAnd will go accordingly and be set to identical-Δ V, form one 0 volts potential difference (PD) at described pixel two ends thus and realize.
Fig. 5 B is the sequential chart of a series of row of demonstration and column signal, and those signals put on 3 * 3 arrays shown in Figure 2, and it will form the demonstration shown in Fig. 5 A and arrange that wherein actuated pixels is non-reflectivity.Before writing the frame shown in Fig. 5 A, pixel can be in any state, and in this example, all row all are in 0 volt, and all row all be in+5 volts.Under these institute's voltages that apply, all pixels are stable at its existing actuated state or release conditions.
In the frame shown in Fig. 5 A, pixel (1,1), (1,2), (2,2), (3,2) and (3,3) are encouraged.For realizing this effect, during the line time of the 1st row, the 1st row and the 2nd row are set at-5 volts, the 3rd row are set at+5 volts.This can not change the state of any pixel, because all pixels all remain in the stability window of 3-7 volt.After this, rise to 5 volts of pulses that are back to 0 volt that descend again then by one from 0 volt and come gating the 1st row.Actuate pixel (1,1) and (1,2) and discharge pixel (1,3) thus.Other pixel in the array is all unaffected.For the 2nd row is set at desired state, the 2nd row are set at-5 volts, the 1st row and the 3rd row are set to+5 volts.After this, apply identical strobe pulse with actuate pixel (2,2) and discharge pixel (2,1) and (2,3) to the 2nd row.Equally, other pixel in the array is all unaffected.Similarly, by the 2nd row and the 3rd row are set at-5 volts, and be listed as the 1st be set at+5 volts to the 3rd capable the setting.The strobe pulse of the 3rd row is set at the state shown in Fig. 5 A with the 3rd row pixel.After writing incoming frame, the row current potential is 0, and the row current potential can remain on+5 or-5 volts, and after this demonstration will be stable at the layout shown in Fig. 5 A.Should be appreciated that, can use identical programs the array that constitutes by tens of or hundreds of row and columns.The sequential, order and the level that should also be clear that the voltage that is used to implement the row and column excitation can alter a great deal in above-described General Principle, and above-mentioned example only is exemplary, and any actuation voltage method all can be used for the present invention.
Detailed structure according to the interferometric modulator of above-mentioned principle operation can be ever-changing.For example, Fig. 6 A-6C shows three kinds of different embodiment of moving lens structure.Fig. 6 A is a sectional view embodiment illustrated in fig. 1, wherein deposition one strip of metal material 14 on the support member 18 that quadrature extends.In Fig. 6 B, movably reflecting material 14 only is on the tethers 32 at corner and is attached to support member.In Fig. 6 C, movably reflecting material 14 is suspended on the deformable layer 34.Because the structural design and the material therefor of reflecting material 14 can be optimized aspect optical characteristics, and the structural design of deformable layer 34 and material therefor can be optimized aspect the desired mechanical property, so this embodiment has some advantages.In many open files, comprise that for example No. 2004/0051929 U.S. discloses in the application case, the production of various dissimilar interference devices has been described.Can use the known technology of a variety of people to make said structure, comprise a series of material depositions, patterning and etching step.
For example the moving-member of MEMS device such as interferometric modulator array is preferable has a space that is protected to move in described space.Hereinafter will illustrate in greater detail the encapsulation technology of MEMS device.The synoptic diagram that shows the basic encapsulating structure of a MEMS device (for example interferometric modulator array) among Fig. 7.As shown in Figure 7, a basic encapsulating structure 70 comprises a substrate 72 and a backboard cover or " cap " 74, and wherein an interferometric modulator array 76 is formed on the substrate 72.This cap 74 is also referred to as " backboard ".
Substrate 72 is connected with formation encapsulating structure 70 by a seal 78 with backboard 74, thereby makes substrate 72, backboard 74 and seal 78 capsules envelope interferometric modulator array 76.This forms a cavity 79 between backboard 74 and substrate 72.Seal 78 can be a non-airtight sealing body, for example a traditional epoxy radicals sticker.In other embodiments, seal 78 can be polyisobutylene (be called isobutene rubber sometimes, other the time then be called PIB), O shape circle, polycarbamate, film metal weldering, liquid spin-coating glass, solder, polymkeric substance or plastics and vapor permeability scope be about 0.2-4.7g mm/m 2The seal of kPa days other types.In other embodiment, seal 78 can be the airtight sealing body, and can comprise for example metal, weld seam and frit.The airtight sealing method for example comprises metal or solder film or compressing tablet, laser or resistive solder technology, and anode combination technology, and the encapsulating structure that wherein obtains thus both can need also not need to use drying agent to realize required inside encapsulation requirement.
Seal 78 can be configured to closed seal (continuously) or open type seal (discontinuous), and can in a kind of method that encapsulates interferometric modulator array 76, apply or be formed on the substrate 72, on the backboard 74 or substrate and backboard 74 on the two.Seal 78 can apply and because of low temperature process has multiple advantage by simple streamline manufacturing process, and welding and soldering tech may need to damage the technology of the excessive temperature of encapsulating structure 20, thereby relatively expensive.In some cases, can use the spot heating method to reduce technological temperature and form feasible technology solution.
In certain embodiments, encapsulating structure 70 comprises getter, and is for example a kind of through the drying agent 80 of structure with the moisture in the reduction cavity 79.The person of ordinary skill in the field will know that for the encapsulation of airtight sealing, drying agent is also nonessential, but can desirably control the moisture that remains in the encapsulation.In one embodiment, drying agent 80 places between interferometric modulator array 76 and the backboard 74.The encapsulation that drying agent both can be used for having airtight sealing also can be used for having the encapsulation of non-airtight sealing.In the encapsulation with airtight sealing, drying agent is generally used for controlling the moisture that remains in encapsulation inside.In the encapsulation with non-airtight sealing, drying agent can be used for controlling the moisture that enters in the encapsulation in environment.Generally speaking, but any trapping moisture and can not disturb the material of the optical property of interferometric modulator array all to can be used as drying agent 80.Suitable getter and desiccant material include but not limited to zeolite, molecular sieve, surface adsorption agent, body adsorbent, reach chemical reactor.
Drying agent 80 can have different forms, shape and size.Except being the solid form, drying agent 80 also can be powder type.These powder can directly be inserted in the encapsulation, and perhaps it can mix mutually with a sticker and applies.In an alternate embodiment, drying agent 80 can form different shape before the inside putting on encapsulation, for example cylindrical, annular or thin slice shape.
The person of ordinary skill in the field will understand, and drying agent 80 can apply by different modes.In one embodiment, drying agent 80 forms as the part deposition of interferometric modulator array 76.In another embodiment, drying agent 80 is to be coated on encapsulation 70 inside as a spraying or dip-coating coating.
Above can be, substrate 72 can form the translucent or transparency material of film, MEMS device.These transparency materials include but not limited to glass, plastics and transparent polymer.Interferometric modulator array 76 can comprise the film modulator of separable type.The person of ordinary skill in the field will understand, and backboard 74 can be made by arbitrary suitable material, for example be made by glass, metal, paper tinsel, polymkeric substance, plastics, pottery or semiconductor material (for example silicon).
Encapsulation process can be in a vacuum, vacuum until and comprise under the pressure of environmental pressure, under the normal atmospheric pressure conditions or be higher than under the pressure of environmental pressure and realize.Also can be during the sealing processing procedure have in the environment of variable and controlled high or low pressure and finish encapsulation procedure one.In the environment of bone dry interferometric modulator array 76 being encapsulated may be comparatively favourable, but and nonessential like this.Similarly, packaging environment can be the inert gas that is under the environmental baseline.Encapsulate the diversity that can reduce the technology cost and more may realize choice of equipment under environmental baseline, this is the operation that can not influence device under environmental baseline because device can transport.
Generally speaking, expectation makes the water vapor that infiltrates through in the encapsulating structure 70 minimized, controls the environment in the cavity 79 in the encapsulating structure 70 thus, and it is carried out airtight sealing keeps constant to guarantee described environment.When humidity in encapsulating or water vapor surpass certain level, the surface tension that causes because of moisture becomes and is higher than the restoring force of displaceable element in the interferometric modulator array 76 (not shown), thereby displaceable element may become permanent viscous to described surface.Thereby need reduction to encapsulate interior moisture value.
Seal 78 comprises among the embodiment of encapsulating structure 70 of sticker therein, and only sticker component self can not be as a suitable environment barrier layer, because it will finally make moisture and/or contaminant infiltration go in the cavity 79 of encapsulating structure 70.Correspondingly, some embodiment of an encapsulating structure 70 comprises one to be positioned at encapsulating structure 70 inner or be contained in the getter of seal 78.Described getter can be configured to absorb the dusty gas that self-interference formula modulator array 76 or package assembling disengage after encapsulating structure 70 assembling, for example when sticker is cured the sticker in the self sealss body 78 disengage or the cavity 79 that volatilizees in material.Described getter can be the chemical reactivity getter that is configured to carry out with predetermined substance chemical reaction, and perhaps described getter can be configured to when for example having predetermined substance such as water physics to take place and transform.For example, described getter can comprise zeolite for example etc. be configured to take place the drying agent that physics transforms when contact water or water vapour.In other embodiments, described getter is positioned at encapsulating structure 70 inside near an inside circumference of seal 78, so that the material that absorbs water vapour in the encapsulating structure 70 or pollutant or infiltrated through by seal 78 when the assembly from cavity 79 inside discharges water vapour or pollutant.In another embodiment, encapsulating structure 70 comprises a secondary seal that is coated to seal 78 outsides, and wherein said secondary seal comprises one and is configured to prevent that moisture from entering in the encapsulating structure 70 or reduce the hydrophobic material that water vapor permeation is gone into the speed in the encapsulating structure 70.
In an embodiment of encapsulating structure 70, seal 78 comprises a chemical reactivity getter, described chemical reactivity getter be configured to absorb attempt to penetrate seal 78 and enter material in the encapsulating structure 70 and/or encapsulating structure 78 inherent make or just existed during assembling or make or assembling after the material that discharges.Described chemical reactivity getter for example can comprise calcium oxide, strontium (Sr), strontium oxide strontia, and aluminium compound.In certain embodiments, seal 78 comprises the potpourri of a chemical reactivity getter and a sticker.In certain embodiments, seal 78 comprises the getter of sufficient amount, to absorb basically or to catch all and making or gaseous matter that assembly process self-sealing substance component disengages or the material that discharges, the gaseous matter that the agent material of for example adhering certainly when binder materials is solidified disengages.The amount of the getter that is comprised in the seal can be defined as following amount: can the perviousness of seal not had a negative impact, but can be captured in the manufacturing of encapsulating structure 70 or the material that assembly process self sealss body component discharges.
Another embodiment of the encapsulating structure 800 that Fig. 8 shows with cutaway perspective form comprises a primary seal body 802 of locate in contact with substrate 72 and backboard 74, an and secondary seal 804 of locating near outer peripheral edges 805 of primary seal body 802.Secondary seal 804 can contact primary seal body 802 as shown in Figure 8, perhaps can have a gap between secondary seal 804 and primary seal body 802.In certain embodiments, secondary seal 804 contacts with primary seal body 802, substrate 76 and backboard 74.The profile geometric shape of secondary seal 804 can be depending on the material of seal 804, and can further depend on the formation or the painting method of seal 804, and is not limited to profile geometric shape shown in Figure 8.
In certain embodiments, secondary seal 804 comprises the sticker or a hydrophobic material of a low-permeability, for example PTFE or related compound.In certain embodiments, secondary seal 804 comprise polyisobutylene (be called isobutene rubber sometimes, other the time then be called PIB), O shape circle, polycarbamate, film metal weldering, liquid spin-coating glass, solder, polymkeric substance or plastics or its combination.
In other embodiments, secondary seal 804 comprises a sealant material and regardless of its penetration property cheaply, and is configured to that primary seal body 802 is consistent to be used for reducing the interior infiltration rate of cavity 79 that water vapour or other contaminant infiltration are gone into encapsulating structure 800.A kind of embodiment that applies or form the method for secondary seal 804 can comprise, for example, grants or prints additive method known to a sealant material pearl, spraying, placement preformed member, printing or the person of ordinary skill in the field.
Primary seal body 802 comprises among the embodiment of getter such as drying agent for example therein, drying agent near or reach its absorption or during with the max cap. of water molecule reaction, the infiltration rate that water vapor permeation is crossed primary seal body 802 may raise rapidly.Secondary seal 804 can advantageously reduce this water vapor permeation speed, thereby prolongs the life-span of the interferometric modulator array 76 in the encapsulating structure 800.On backboard 74, comprise drying agent 80 although in Fig. 8, encapsulating structure 800 is shown as, however the embodiment of encapsulating structure 800 can make or be assembled into and do not have drying agent 80, perhaps wherein drying agent is positioned on the another location in the encapsulating structure.
Fig. 9 is the sectional view of an embodiment of an encapsulating structure 900, and this encapsulating structure 900 comprises the getter 902 of an inner peripheral 903 layouts of a close seal 78.For example, described getter can comprise zeolite, molecular sieve, surface adsorption agent, body adsorbent, reach chemical reactivity material or one combination.In one embodiment, getter 902 comprises the potpourri of a getter material and a sticker.Getter 902 preferred construction become to absorb for example water vapour and pollutant etc. penetrated seal 78 from environment material, are making or gaseous matter or material that discharges that assembly process self sealss body 78 disengages and the material that is positioned at the cavity 79 of encapsulating structure 900.Getter 902 can contact with seal 78, perhaps can have the gap between getter 902 and seal 78.For example, therein among getter 902 embodiment that its size can increase when absorbing an absorbate and reach capacity, preferablely between getter 902 and seal 78, there is the gap.
Getter 902 shown in Figure 9 has a rectangular substantially section and contacts with substrate 72 and seal 78.Yet the person of ordinary skill in the field should be appreciated that the profile geometric shape of getter 902 can be different from shown in Figure 9, and can be depending on the formation or the painting method of getter 902 in certain embodiments.In one embodiment, getter 902 is to use thin film technique to form.In addition, getter 902 also can contact backboard 74 except that contact substrate 72, and perhaps getter 902 can contact backboard 74 and not contact substrate 72.
Seal 78 comprises among the embodiment of the encapsulating structure 900 of metal sealer for example therein, may disengage or discharge polluter because of the chemical reaction during forming seal.For example, when seal 78 comprises solder, apply or form seal during or at the assembly process of encapsulating structure 900, may discharge oxide.Therefore, getter 902 preferred construction become to be absorbed in coating or form during the seal or gaseous matter that the assembly process self sealss body of encapsulating structure 900 disengages or the material that discharges.
In certain embodiments, as shown in Figure 9, encapsulating structure 900 is not comprised in the drying agent 80 that is comprised in other encapsulating structures (encapsulating structure 70 for example shown in Figure 7).Yet encapsulating structure 900 also can comprise drying agent 80 and be not limited to structure shown in Figure 9 or assembly.
In one embodiment, zeolite can comprise the mineral of calcium oxide or aluminosilicate structure, for example sodium aluminosilicate.In another embodiment, zeolite can comprise the mineral of microporous silicate structure.Should be appreciated that, also can use the effective ingredient that can be used as molecular level absorbability filtering material except that zeolite as getter.Sticker mentioned above can comprise the sticker that a sticker or with low outgas number has various outgas numbers.
The person of ordinary skill in the field will understand, and the amount of the quantity of material of seal 78 or getter or hydrophobic material can be depending in its desired length of life will need the moisture that removes or the estimator of dusty gas in encapsulating structure.The quantity of material of seal 78 or be incorporated in the seal 78 or the amount that is incorporated into inner or outside getter of the cavity 79 of encapsulating structure 70 or hydrophobic material also not only depends on when forming encapsulating structure 20 moisture in this encapsulation or the amount of dusty gas, but also depend on the outgas potentiality of the infiltration rate and the package assembling of seal 78.
In certain embodiments, the thickness of seal 78 is preferable forms in about 100-300 (for example using film) scope, in about 10-30 mu m range or is about 50 μ m.The person of ordinary skill in the field will know, the thickness of seal 78 and be incorporated into seal 78 or the cavity 79 of encapsulating structure 70 or will depend on various factors near the amount of the getter in the secondary seal of the outer peripheral edges of seal 78, for example the expection humidity level of the surrounding environment of the amount of the material composition of the life expectancy of packaging system, seal 78, the pollutant the life period estimation can infiltrate through encapsulating structure 70 in and moisture, encapsulating structure 70, reach in encapsulating structure 70, whether to comprise other getter or drying agent 80.
As indicated above, encapsulating structure both can comprise and also can not comprise above in conjunction with the described drying agent 80 of Fig. 7.For example, when seal 78 comprises getter, when secondary seal is formed at the outer peripheral edges place of seal 78, perhaps when arranging a getter, can not need in encapsulating structure, use extra drying agent to satisfy the life expectancy attribute of packaging system near the inner peripheral of seal 78.Encapsulating structure needn't hold among the embodiment of drying agent 80 therein, and package dimension and cost can correspondingly be reduced.
In certain embodiments, getter comprises zeolite.Zeolite can absorb hydrone under high relatively temperature.Zeolite can be with moisture and dusty gas trapping in its hole.The person of ordinary skill in the field will understand, and the zeolite that can select to have the different aperture size absorbs different pollutants as the material of seal 78.In certain embodiments, getter comprises zeolite, and to absorb contaminant molecule, for example critical diameter is up to the aromatic series branched-chain hydrocarbon of 10 dusts through selection for described zeolite.In another embodiment, can select the zeolite of pore-size between 2 dusts and 3 dusts to absorb the contaminant molecule of diameter less than 2 dusts, for example hydrogen and hydrone.In another embodiment, can use pore-size is that the zeolite of 50 dusts comes absorbed nitrogen and carbon dioxide molecule.The person of ordinary skill in the field will know, seal 78 and at encapsulating structure inner and outside employed getter or hydrophobic material can comprise zeolite or other potpourris special or the functionalization getter material with various pore-sizes.
Figure 10 A and 10B are the system block diagrams of an embodiment of demonstration one display device 2040.Display device 2040 can be (for example) cellular phone or mobile phone.Yet the form that the same components of display device 2040 or its do to change slightly also can be used as for example illustration of all kinds such as TV and portable electronic device display device.
Display device 2040 comprises a shell 2041, a display 2030, an antenna 2043, a loudspeaker 2045, an input media 2048 and a microphone 2046.Shell 2041 is made by any technology in the known numerous kinds of manufacturing process of person of ordinary skill in the field usually, comprises injection moulding and vacuum forming.In addition, shell 2041 can be made by any material in the numerous kinds of materials, includes, but is not limited to plastics, metal, glass, rubber and pottery or its combination.In one embodiment, shell 2041 comprises removable part (not shown), and these removable parts can have removable part different colours or that comprise different identification, picture or symbol with other and use instead.
The display 2030 of exemplary display device 2040 can be any in the numerous kinds of displays, comprises bi-stable display as herein described.In other embodiments, display 2030 comprises flat-panel monitors such as plasma scope for example mentioned above, EL, OLED, STN LCD or TFTLCD or non-tablet display such as CRT or other tubular devices for example, and these displays are known by the person of ordinary skill in the field.Yet for ease of the explanation present embodiment, display 2030 comprises just like interferometric modulator display as herein described.
Figure 10 B schematically shows the assembly among the embodiment of exemplary display device 2040.Example illustrated display device 2040 comprises a shell 2041, and can comprise that other are closed in assembly wherein at least in part.For example, in one embodiment, exemplary display device 2040 comprises a network interface 2027, and this network interface 2027 comprises that one is coupled to the antenna 2043 of a transceiver 2047.Transceiver 2047 is connected to processor 2021, and processor 2021 is connected to again regulates hardware 2052.Regulating hardware 2052 can be configured to a signal is regulated (for example a signal being carried out filtering).Regulate hardware 2052 and be connected to a loudspeaker 2045 and a microphone 2046.Processor 2021 also is connected to an input media 2048 and a driving governor 2029.Driving governor 2029 is coupled to one frame buffer 2028 and is coupled to array driver 2022, and array driver 2022 is coupled to an array of display 2030 again.One power supply 2050 is all component power supply according to the designing requirement of particular exemplary display device 2040.
Network interface 2027 comprises antenna 2043 and transceiver 2047, so that exemplary display device 2040 can communicate by network and one or more device.In one embodiment, network interface 2027 also can have some processing capacity, to reduce the requirement to processor 2021.Antenna 2043 is to launch being used to known to the person of ordinary skill in the field and any antenna of received signal.In one embodiment, this antenna is launched according to IEEE 802.11 standards (comprising IEEE 802.11 (a), (b), or (g)) and is received the RF signal.In another embodiment, this antenna is launched according to bluetooth (BLUETOOTH) standard and is received the RF signal.If be cellular phone, then this antenna is designed to receive CDMA, GSM, AMPS or other and is used for the known signal that communicates at the mobile phone network.2047 pairs of signals that receive from antenna 2043 of transceiver carry out pre-service, so that it can be received and further be handled by processor 2021.Transceiver 2047 is also handled the signal that self processor 2021 receives, so that they can be by antenna 2043 from exemplary display device 2040 emissions.
In an alternate embodiment, can replace transceiver 2047 by a receiver.In another alternate embodiment, can replace network interface 2027 by an image source, this image source can store or produce and send out the view data of delivering to processor 2021.For example, this image source can be one and contains the software module that the digital video disk (DVD) of view data or hard disk drive or produce view data.
The overall operation of processor 2021 common control examples display device 2040.Processor 2021 automatic network interfaces 2027 or an image source receive data (for example Ya Suo view data), and this data processing is become raw image data or is processed into a kind of form that is easy to be processed into raw image data.Then, the data after processor 2021 will be handled are sent to driving governor 2029 or are sent to frame buffer 2028 and store.Raw data typically refers to the information that can discern the picture characteristics of each position in the image.For example, described picture characteristics can comprise color, saturation degree and gray level.
In one embodiment, processor 2021 comprises a microcontroller, CPU or is used for the logical block of the operation of control examples display device 2040.Regulating hardware 2052 generally includes and is used for sending signals and being used for amplifier and wave filter from microphone 2046 received signals to loudspeaker 2045.Adjusting hardware 2052 can be the discrete component in the exemplary display device 2040, perhaps can incorporate in processor 2021 or other assemblies.
Driving governor 2029 direct self processors 2021 or receive the raw image data that produces by processor 2021 from frame buffer 2028, and suitably with the raw image data reformatting so as high-speed transfer to array driver 2022.Particularly, driving governor 2029 is reformated into a data stream with raster-like format with raw image data, so that it has a chronological order that is suitable for scanning array of display 2030.Then, the information after driving governor 2029 will format is sent to array driver 2022.Although driving governor 2029 (for example lcd controller) normally as one independently integrated circuit (IC) be associated with system processor 2021, yet these controllers also can make up by many kinds of modes.It can be used as hardware and is embedded in the processor 2021, is embedded in the processor 2021 or together fully-integrated with example, in hardware and array driver 2022 as software.
Usually, the self-driven controllers 2029 of array driver 2022 receive the information after the format and video data are reformated into one group of parallel waveform, and the parallel waveform per second of this group many times is applied to from hundreds of of the x-y picture element matrix of display, thousands of lead-in wires sometimes.
In one embodiment, driving governor 2029, array driver 2022, and array of display 2030 be applicable to the display of arbitrary type as herein described.For example, in one embodiment, driving governor 2029 is a traditional display controller or bistable display controllers (a for example interferometric modulator controller).In another embodiment, array driver 2022 is a legacy drive or a bistable display driver (a for example interferometric modulator display).In one embodiment, a driving governor 2029 integrates with array driver 2022.This embodiment is very common in the integrated system of for example cellular phone, wrist-watch and other small-area display equal altitudes.In another embodiment, array of display 2030 is a typical array of display or a bistable array of display (a for example display that comprises an interferometric modulator array).
Input media 2048 makes the operation that the user can control examples display device 2040.In one embodiment, input media 2048 comprises a keypad (for example qwerty keyboard or telephone keypad), a button, a switch, a touch sensitive screen, a pressure-sensitive or thermosensitive film.In one embodiment, microphone 2046 is input medias of exemplary display device 2040.When using microphone 2046, can provide voice command to come the operation of control examples display device 2040 by the user to these device input data.
Power supply 2050 can comprise many kinds of energy storing devices, and this is well-known in affiliated technical field.For example, in one embodiment, power supply 2050 is a rechargeable accumulator, for example a nickel-cadmium accumulator or a lithium-ions battery.In another embodiment, power supply 2050 is a regenerative resource, capacitor or solar cell, comprises plastic solar cell and solar cell lacquer.In another embodiment, power supply 2050 is configured to the socket reception electric power on wall.
In certain embodiments, programmability is as indicated above is present in the driving governor in control, and this driving governor can be arranged on several positions of electronic display system.In some cases, the control programmability is present in the array driver 2022.The person of ordinary skill in the field will know, can reach the above-mentioned optimization of enforcement in different structures in number of hardware and/or the component software arbitrarily.
Above description details some embodiment of the present invention.Yet, should be appreciated that seem how in detail regardless of above illustrating on literal, the present invention still can implement by many kinds of modes.Also as indicated above, it should be noted that describe some feature of the present invention and aspect the time used particular term should not be regarded as meaning that this term is defined as in this article again only limits to comprise the feature of the present invention that is associated with this term or any concrete property of aspect.Therefore, category of the present invention should be explained according to enclose claims and any content of equal value thereof.

Claims (42)

1, a kind of system, it comprises:
One substrate;
One is formed at the MEMS device on the described substrate;
One backboard; And
The one peripheral seal of locating and contacting described substrate and described backboard near described MEMS device, wherein said seal comprises a chemical reactivity getter.
2, the system as claimed in claim 1, wherein said seal comprises definite getter, described air-breathing dosage be enough to be absorbed in make and assembling one of at least during all basically materials of disengaging from described seal.
3, the system as claimed in claim 1, wherein said seal comprises a sticker.
4, the system as claimed in claim 1, wherein said chemical reactivity getter comprise calcium oxide, strontium, strontium oxide strontia, and the aluminium compound at least a.
5, the system as claimed in claim 1, wherein said MEMS device comprises an interferometric modulator.
6, the system as claimed in claim 1, wherein said substrate comprises a transparent substrates.
7, system as claimed in claim 6, wherein said transparent substrates comprises glass.
8, the system as claimed in claim 1, it further comprises a secondary seal near described seal location.
9, system as claimed in claim 8, wherein said secondary seal is positioned at an outer peripheral edges place of described seal.
10, system as claimed in claim 8, wherein said secondary seal is positioned at an inner peripheral place of described seal.
11, system as claimed in claim 8, wherein said secondary seal comprises a hydrophobic material.
12, the system as claimed in claim 1, wherein said getter comprises a drying agent.
13, the system as claimed in claim 1, it further comprises:
One with the processor of described MEMS device electric connection, described processor is configured to image data processing; And
One with the memory storage of described processor electric connection.
14, system as claimed in claim 13, it further comprises one drive circuit, described driving circuit is configured to send at least one signal to described MEMS device.
15, system as claimed in claim 14, it further comprises a controller, described controller is configured to send to described driving circuit at least a portion of described view data.
16, system as claimed in claim 13, it further comprises an image source module, described image source module is configured to send described view data to described processor.
17, system as claimed in claim 16, wherein said image source module comprise a receiver, transceiver, reach at least one in the transmitter.
18, system as claimed in claim 13, it further comprises an input media, described input media is configured to receive the input data and described input data is sent to described processor.
19, the method for a kind of sealing one MEMS (micro electro mechanical system) (MEMS) device encapsulation, it comprises:
One substrate and a backboard are provided, and wherein said substrate comprises a MEMS device formed thereon;
Periphery near described MEMS device forms a seal, and wherein said seal comprises a chemical reactivity getter; And
The described substrate of attaching, described seal, and described backboard are encapsulated in described MEMS device in one encapsulation thus.
20, method as claimed in claim 19, wherein said seal comprise a certain amount of described chemical reactivity getter, described air-breathing dosage be enough to be absorbed in make and assembling one of at least during all basically materials of disengaging from described seal.
21, method as claimed in claim 19, wherein said seal comprises a sticker.
22, method as claimed in claim 19, wherein said chemical reactivity getter comprise calcium oxide, strontium, strontium oxide strontia, and the aluminium compound at least a.
23, method as claimed in claim 19, wherein said MEMS device comprises an interferometric modulator.
24, method as claimed in claim 19, wherein said substrate comprises a transparent substrates.
25, method as claimed in claim 19, it comprises that further close described seal forms a secondary seal.
26, method as claimed in claim 25, wherein said secondary seal are formed at an outer peripheral edges place of described seal.
27, method as claimed in claim 25, wherein said secondary seal are formed at an inner peripheral place of described seal.
28, method as claimed in claim 25, wherein said secondary seal comprises a hydrophobic material.
29, method as claimed in claim 19, wherein said getter comprises a drying agent.
30, a kind of MEMS (micro electro mechanical system) of making by method as claimed in claim 19 (MEMS) device encapsulation.
31, a kind of MEMS (micro electro mechanical system) (MEMS) device, it comprises:
The transmission member that is used for transmitted light;
Be used for the modulation member that the light of described transmission member is modulated is passed in transmission;
Be used to cover the covering member of described modulation member;
Be used for forming between described transmission member and described covering member the containment member of a cavity, wherein said containment member comprises the reactive means that is used for the material chemically reactive that contacts described containment member.
32, device as claimed in claim 31, wherein said transmission member comprises a transparent substrates.
33, device as claimed in claim 31, wherein said modulation member comprises an interferometric modulator.
34, device as claimed in claim 31, wherein said covering member comprises a backboard.
35, device as claimed in claim 31, wherein said containment member comprises a sticker.
36, device as claimed in claim 31, wherein said reactive means comprise a chemical reactivity getter.
37, device as claimed in claim 36, wherein said containment member comprises definite getter, described air-breathing dosage be enough to be absorbed in make and assembling one of at least during all basically materials of disengaging from described containment member.
38, device as claimed in claim 36, wherein said chemical reactivity getter comprise calcium oxide, strontium, strontium oxide strontia, and the aluminium compound at least a.
39, device as claimed in claim 31, it further comprises the secondary seal that a periphery that centers on described containment member forms.
40, device as claimed in claim 39, wherein said secondary seal comprises a hydrophobic material.
41, device as claimed in claim 39, wherein said secondary seal forms around an inner peripheral of described containment member.
42, device as claimed in claim 39, wherein said secondary seal forms around outer peripheral edges of described containment member.
CN 200510105032 2004-09-27 2005-09-26 Method and system for packaging MEMS devices with incorporated getter Pending CN1773358A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US61347604P 2004-09-27 2004-09-27
US60/613,476 2004-09-27
US11/102,554 2005-04-08

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103889886A (en) * 2011-10-21 2014-06-25 高通Mems科技公司 Method and apparatus for application of anti-stiction coating
CN110392836A (en) * 2017-02-21 2019-10-29 Hrl实验室有限责任公司 Sensor suite based on MEMS
CN111017864A (en) * 2019-09-27 2020-04-17 株洲国创轨道科技有限公司 MEMS packaging part based on 3D printing and packaging method
CN111083315A (en) * 2018-10-19 2020-04-28 宁波舜宇光电信息有限公司 Air-escape-free photosensitive assembly, camera module and manufacturing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103889886A (en) * 2011-10-21 2014-06-25 高通Mems科技公司 Method and apparatus for application of anti-stiction coating
CN110392836A (en) * 2017-02-21 2019-10-29 Hrl实验室有限责任公司 Sensor suite based on MEMS
CN111083315A (en) * 2018-10-19 2020-04-28 宁波舜宇光电信息有限公司 Air-escape-free photosensitive assembly, camera module and manufacturing method
CN111083315B (en) * 2018-10-19 2023-10-27 宁波舜宇光电信息有限公司 No-air-escape hole type photosensitive assembly, camera shooting module and manufacturing method
CN111017864A (en) * 2019-09-27 2020-04-17 株洲国创轨道科技有限公司 MEMS packaging part based on 3D printing and packaging method
WO2021057109A1 (en) * 2019-09-27 2021-04-01 株洲国创轨道科技有限公司 3d-printing-based mems package and packaging method

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