CN1766158A - The preparation method of low resistivity metal oxide lanthanum nickelate - Google Patents
The preparation method of low resistivity metal oxide lanthanum nickelate Download PDFInfo
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- CN1766158A CN1766158A CN 200510029084 CN200510029084A CN1766158A CN 1766158 A CN1766158 A CN 1766158A CN 200510029084 CN200510029084 CN 200510029084 CN 200510029084 A CN200510029084 A CN 200510029084A CN 1766158 A CN1766158 A CN 1766158A
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Abstract
The invention discloses a kind of preparation method of low resistivity metal oxide lanthanum nickelate film, this method is by adopting the method deposition lanthanum nickelate thin film of magnetron sputtering, then lanthanum nickelate thin film being carried out the conducting metal oxide lanthanum nickelate thin film that hyperbaric oxygen thermal treatment obtains low-resistivity.The advantage of this method is that the film resiativity that obtains is extremely low, and the ferroelectric properties that helps device is given full play to, and can reduce the operating voltage of device.The preparation method is simple, and the thin-film material stable performance of growth, good reproducibility, cost are low.The whole growth of thin-film material and post-processing temperature all are lower than 450 ℃ of the highest tolerance temperature of silicon sensing circuit, therefore can be integrated with the silicon sensing circuit as the bottom electrode of ferroelectric micro element with the LNO thin-film material of the inventive method preparation.
Description
Technical field
The present invention relates to the metal oxide lanthanum nickelate film, specifically be meant a kind of preparation method who is used for the low resistivity metal oxide lanthanum nickelate film of ferroelectric memory bottom electrode.
Background technology
Noble metal films such as platinum are the most widely used bottom electrode materials in the ferroelectric memory, and still, when making electrode with Pt, the electropolarized anti-fatigue performance of ferro-electric device is relatively poor, and the bonding force of Pt and Si sill is also relatively poor in addition.In order to improve the fatigue resistance of ferroelectric material, carried out a large amount of research to adopting oxide material to replace traditional Pt electrode in recent years as electrode.Some conductive oxides especially conductive oxide of perovskite structure have been subjected to research worker's special attention, and these conductive oxides comprise LaNiO
3(LNO), RuO
2, IrO
2, SrRuO
3, LSCO etc.Compare with Pt electrode commonly used, use its ferro-electric device of metal oxide electrode of perovskite structure to have better fatigue resistance, reason is and the interfacial effect of electrode materials, has prevented the accumulation of oxygen room at the electrode place.
Do electrode with the LNO of perovskite structure and compare with Pt, the resistivity of LNO thin-film material is more much higher than Pt.As electrode, high resistivity will make effective electric field reduce, and hinder that ferroelectric material is ferroelectric to be given full play to.And this will make the operating voltage of device strengthen, and it is particularly important that little operating voltage seems in micro element.Therefore, the resistivity that how to reduce the LNO thin-film material becomes the focus and the difficult point of research again.
The resistivity of the present polycrystalline LNO film of widespread reports in the world is 5～26 * 10
-4Ω cm, as electrode materials, its resistivity still has been more higher, but its advantage is to improve the fatigue resistance of ferroelectric material.Compare with extension LNO film, polycrystalline LNO film generally with silica-base material as substrate, so it can with silicon sensing circuit compatibility.Though the resistivity of extension LNO film crystal is lower, 1.5～5 * 10
-4Ω cm.But the equipment requirements of epitaxial film film growth is higher, growth conditions is harsh, and is with high costs, and needs the SrTiO with lattice parameter and LNO coupling
3, LaAlO
3, or monocrystalline such as sapphire is as substrate.And these substrates are non-silica-base materials, can not with silica-based sensing circuit compatibility.
Summary of the invention
Based on the variety of problems that above-mentioned prior art exists, the objective of the invention is to propose that a kind of working method is simple, the preparation method of stable performance, good reproducibility, low-resistivity conducting metal oxide lanthanum nickel oxide thin-film material that cost is low.
In order to achieve the above object, the present invention carries out hot high pressure to the LNO film then and handles the conducting metal oxide lanthanum nickelate thin film that obtains low-resistivity by adopting the method deposition LNO film of magnetron sputtering.
Its preparation process is as follows:
A. sputtering target preparation
With purity 99.9% La
2O
3And Ni
2O
3Powder is pressed into block after by 1: 1 La, Ni atomic ratio mixed grinding, and sintering 3 hours under 1100 ℃ of high temperature is made the LNO target then;
B. thin-film material preparation
The monocrystalline substrate of (100) orientation after at first will cleaning is according to a conventional method put into sputtering instrument, is evacuated to 10
-4Pa;
To the monocrystalline substrate heating, make it remain on 200-400 ℃ then;
Feed argon gas and oxygen again, its oxygen partial pressure is 20-60%, and air pressure remains on 1.5Pa-1.7Pa, carries out sputtering sedimentation LaNiO
3Film, sputtering power are 80-100W, and sputtering time is decided according to the needs of film thickness.
C. thin-film material aftertreatment
The above-mentioned thin-film material for preparing is put into autoclave carry out hyperbaric oxygen thermal treatment, pressure remains on 1.5-8Mpa, and thermal treatment temp is 200-400 ℃, and the time is 4-6 hour, and wherein temperature rise rate is 8.24 ℃/min, and rate of temperature fall is 30 ℃/h.Can obtain resistivity at last is 3.6-1.55 * 10
-4The LNO film of the counterfeit cube of phase of Ω cm.
The LNO thin-film material of the inventive method preparation has following beneficial effect:
1. Zhi Bei LNO film resiativity is extremely low, and the ferroelectric properties that helps device is given full play to, and can reduce the operating voltage of device.
2. the preparation method is simple, and the thin-film material stable performance of growth, good reproducibility, cost are low.
3. the whole growth of thin-film material and post-processing temperature all are lower than 450 ℃ of the highest tolerance temperature of silicon sensing circuit, therefore can be integrated with the silicon sensing circuit as the bottom electrode of ferroelectric micro element with the LNO thin-film material of the inventive method preparation.
Description of drawings
Fig. 1 is the resistivity of thin-film material different oxygen partial pressure and the relation under different underlayer temperatures during with its sputter.
Fig. 2 is the partial enlarged drawing of Fig. 1.
Fig. 3 is a underlayer temperature when being 200 ℃, and its resistivity of the film of sputter is with the variation of handling oxygen pressure.
Fig. 4 is the LaNiO of the inventive method preparation
3The X-ray diffractogram of film after autoclaving.
Specific implementation method
Below in conjunction with accompanying drawing specific implementation method of the present invention is described in further detail, Fig. 1 is in different partial, the change curve of the film resiativity that generates under the various substrate, as can be seen from Figure 1, along with the increase of oxygen partial pressure, resistivity decreased.After reaching 20%, the variation of resistivity tends to be steady substantially.This explanation can't improve the oxygen level of LNO film.Simultaneously, along with substrate temperature raises, will make more oxygen volatilization, thereby film resiativity raises.These illustrate that all the oxygen level in the film is most important to resistivity, and oxygen level is high more, and resistivity is low more.And hyperbaric oxygen is handled, and more oxygen can be synthesized in the LNO film, thereby this method can reduce resistivity.
A most preferred embodiment of the present invention is provided below
1. the preparation of sputtering target
Use 99.9% La
2O
3And Ni
2O
3The block that powder is pressed into 100mm * 3mm after by 1: 1 La, Ni atomic ratio mixed grinding 1100 ℃ of high temperature sinterings 3 hours, is made the LNO ceramic target then;
2. the preparation of thin-film material
Substrate is the monocrystalline silicon piece of (100) orientation.Earlier, carry out matting with trieline then, in vacuum chamber, peel off cleaning with the ar-ion beam etching more at last with the ultrasonic cleaning that hockets of ethanol, acetone.
Then substrate is put into sputtering instrument, be evacuated to 5 * 10
-4Pa, substrate are heated to 200 ℃, and range is from substrate 7cm, and power 80-100W feeds argon gas and oxygen then, and the oxygen partial pressure ratio is 30%, and keep air pressure at 1.6Pa, carry out sputter, 1 hour time.At this moment obtain polycrystalline LNO film, its resistivity is 7 * 10
-4Ω cm.
3. the aftertreatment of thin-film material
The above-mentioned thin-film material for preparing is put into autoclave carry out hyperbaric oxygen thermal treatment, pressure remains on 8Pa, and 400 ℃ of thermal treatment temps were annealed about 5 hours, and wherein temperature rise rate is 8.24 ℃/min, and rate of temperature fall is 30 ℃/h.Obtaining resistivity after tested is 1.55 * 10
-4The LaNiO of the counterfeit cube of phase of Ω cm
3Film.
3. material is identified
The microstructure of the LNO film of present method preparation is measured the X-ray diffraction spectrogram of seeing Fig. 4.Show thin-film material height (100) orientation among the figure.
Claims (1)
1. the preparation method of a low resistivity metal oxide lanthanum nickelate film,
Its preparation process is as follows:
A. sputtering target preparation
With purity 99.9% La
2O
3And Ni
2O
3Powder is pressed into block after by 1: 1 La, Ni atomic ratio mixed grinding, and sintering 3 hours under 1100 ℃ of high temperature is made the LNO target then;
B. thin-film material preparation;
C. thin-film material aftertreatment;
It is characterized in that said thin-film material preparation process is:
The monocrystalline substrate of (100) orientation after at first will cleaning is according to a conventional method put into sputtering instrument, is evacuated to 10
-4Pa;
To the monocrystalline substrate heating, make it remain on 200-400 ℃ then;
Feed argon gas and oxygen again, its oxygen partial pressure is 20-60%, and air pressure remains on 1.5Pa-1.7Pa, carries out sputtering sedimentation LaNiO
3Film, sputtering power are 80-100W, and sputtering time is decided according to the needs of film thickness;
The step of said thin-film material aftertreatment is:
The above-mentioned thin-film material for preparing is put into autoclave carry out hyperbaric oxygen thermal treatment, pressure remains on 1.5-8Mpa, and thermal treatment temp is 200-400 ℃, and the time is 4-6 hour, and wherein temperature rise rate is 8.24 ℃/min, and rate of temperature fall is 30 ℃/h.
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|---|---|---|---|
| CNB2005100290842A CN100365160C (en) | 2005-08-25 | 2005-08-25 | Preparation method of low resistivity metal oxide lanthanum nickelate |
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| CN1766158A true CN1766158A (en) | 2006-05-03 |
| CN100365160C CN100365160C (en) | 2008-01-30 |
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| CN100433415C (en) * | 2006-09-20 | 2008-11-12 | 北京航空航天大学 | Composite electrode having platinum adulterated by nickel acid lanthanum and its preparing method |
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| CN103664170A (en) * | 2012-08-28 | 2014-03-26 | 河北联合大学 | Preparation technology of lanthanum nickelate ceramic target |
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| CN110940859A (en) * | 2019-11-22 | 2020-03-31 | 西南大学 | Device for on-line measuring high-temperature conductivity and oxygen partial pressure |
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| CN100433415C (en) * | 2006-09-20 | 2008-11-12 | 北京航空航天大学 | Composite electrode having platinum adulterated by nickel acid lanthanum and its preparing method |
| CN101221898B (en) * | 2007-01-08 | 2011-05-11 | 晶能光电（江西）有限公司 | Method for manufacturing metallic substrate with high quality surface |
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| CN103664170A (en) * | 2012-08-28 | 2014-03-26 | 河北联合大学 | Preparation technology of lanthanum nickelate ceramic target |
| CN104419895B (en) * | 2013-09-09 | 2016-11-16 | 中国科学院上海硅酸盐研究所 | The method that under low temperature, preparation has the ruthenic acid strontium thin film of height (001) preferred orientation |
| CN104419895A (en) * | 2013-09-09 | 2015-03-18 | 中国科学院上海硅酸盐研究所 | Method for preparing strontium ruthenate film with highly (001) preferred orientation at low temperature |
| CN103469156A (en) * | 2013-09-18 | 2013-12-25 | 东华大学 | Method for carrying out stressing engineering on thicker ferroelectric film for material modification |
| CN103469156B (en) * | 2013-09-18 | 2015-10-28 | 东华大学 | A kind of method thicker ferroelectric membranc enforcement stress engineering being used for material modification |
| CN103680940A (en) * | 2013-09-18 | 2014-03-26 | 东华大学 | A method for improving anti-fatigue properties of a ferroelectric thin film with conductive oxides as bottom electrodes |
| CN103668060A (en) * | 2013-12-04 | 2014-03-26 | 华东师范大学 | Multilayer homogeneous growth bismuth ferrite thin-film material and preparation method thereof |
| CN103668060B (en) * | 2013-12-04 | 2016-04-06 | 华东师范大学 | Multilayer homogenous growth bismuth ferric film material and preparation method thereof |
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