CN1758436A - High power LED array module - Google Patents
High power LED array module Download PDFInfo
- Publication number
- CN1758436A CN1758436A CNA2004100810823A CN200410081082A CN1758436A CN 1758436 A CN1758436 A CN 1758436A CN A2004100810823 A CNA2004100810823 A CN A2004100810823A CN 200410081082 A CN200410081082 A CN 200410081082A CN 1758436 A CN1758436 A CN 1758436A
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- Prior art keywords
- high power
- power led
- holding hole
- led chip
- array module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
This invention relates to a high power LED array module including a CB, multiple anodes and cathodes, multiple chips, a package material and multiple lenses, among which, the CB has many holes for putting the arrays, each hole has a cathode and an anode, the anodes in the holes are connected with each other and cathodes are connected with each other, each hole has at least a chip serial or parallel to the anode and the cathode in the hole, the package material fills the holes for fixing the chips and each hole has a lens focusing rays generated by the chips.
Description
Technical field
The present invention relates to a kind of High Power LED, particularly relate to a kind of array module of High Power LED.
Background technology
General High Power LED, III-V family High Power LED for example when desiring to use with array way, for example as the outdoor large display board, is that the single High Power LED that will encapsulate is assembled formation on a circuit board.Shown in Figure 1 is the mode that prior art forms the High Power LED array.The single High Power LED 100 that has encapsulated is coupled to a circuit board 110 by the array configurations mode, to form required High Power LED array.Each High Power LED 100 is by anode 101, negative electrode 102, High Power LED chip 103, and lens 104 constitute.
High Power LED chip 103 places a groove 106 of negative electrode 102, thereby forms electric connection with negative electrode 102.Simultaneously, High Power LED chip 103 is electrically connected to anode 101 by a lead 105.Insert encapsulating material in the groove 106, in order to High Power LED chip 103 is fixed in the groove 106, simultaneously also as being electrically insulated between anode 101 and the negative electrode 102.Lens 104 place on the anode 101, in order to focus on the light that High Power LED chip 103 is produced, with the high brightness beam that obtains to focus on.After single High Power LED 100 is coupled to circuit board 110, with positive wire 107 anode 101 of single High Power LED 100 is connected again.
Yet, assemble on circuit board by single High Power LED and to form the High Power LED array and have a plurality of shortcomings.At first, when being assembled in circuit board with single High Power LED, formed array module is bulky, and required cost is higher, and needs extra procedure of processing, electrically connects so that form between High Power LED.Towards compact demand trend, adverse influence is arranged for the High Power LED array.
In addition, when single High Power LED was assembled the formation array module on circuit board, often the deviation because of assembling position produced the optical coupled problem, caused overall brightness to reduce and beam divergence.Yet, because when the single High Power LED of encapsulation, lens just are fixed thereon, thereby need the extra outer lens of using, the light beam of whole array module is focused again, could improve the beam divergence phenomenon of array module.
Another problem that forms high power LED array module with assembling mode is that heat radiation is bad.The High Power LED of single encapsulation, its surface area is less, therefore when using separately, Yin Gaowen and reduce luminous efficiency easily.After it was assembled into array module, the bad problem of dispelling the heat was even more serious, and then caused the illumination effect of whole array module not good.
Therefore, need a kind of improved high power LED array module,, reduce the volume of array module simultaneously, to adapt to how dissimilar application so that improve the heat radiation and the optical coupled problem of array module.
Summary of the invention
In view of this, one object of the present invention is to provide a kind of high power LED array module, reduces volume requiredly, improves radiating efficiency and optical coupled performance simultaneously.
To achieve these goals, the invention provides a kind of high power LED array module.This array module contains a circuit board, a plurality of anodes and negative electrode, a plurality of High Power LED chips, an encapsulating material, and a plurality of lens.Circuit board has the holding hole of a plurality of array configurations.Have an anode and a negative electrode in each holding hole, the anode in each holding hole is electrically connected to each other, and the negative electrode of each holding hole is electrically connected to each other.Have at least one High Power LED chip in each holding hole, and be connected to anode and negative electrode in each holding hole in the serial or parallel connection mode.Encapsulating material is filled in each holding hole, in order to fixed High Power LED chip.Have lens on each holding hole, to focus on the light that produces by the High Power LED chip.
Array module of the present invention, described High Power LED chip are III-V family High Power LED chips.
Array module of the present invention, each described holding hole also contains at least one radiator structure, to conduct the heat energy that described High Power LED chip produces.
Array module of the present invention, described radiator structure further are coupled to a second level radiator.
Array module of the present invention, each described anode is electrically connected to each other by the serial or parallel connection mode.
Array module of the present invention, each described negative electrode is electrically connected to each other by the serial or parallel connection mode.
Array module of the present invention, described High Power LED chip are electrically connected to each described negative electrode and each described anode of each described holding hole configuration by the serial or parallel connection mode.
Array module of the present invention, described encapsulating material are silicones or epoxy resin.
Array module of the present invention is adjusted to each described lens at each described holding hole and makes light beam output reach optimized position.
Another object of the present invention is to provide a kind of method for packing of High Power LED, forms high power LED array module in order to encapsulation on a circuit board.
To achieve these goals, the invention provides a kind of method for packing of High Power LED, encapsulation forms a high power LED array module on a circuit board.This circuit board has a plurality of holding holes with array configurations, has an anode and a negative electrode in each holding hole, and the anode of each holding hole is electrically connected to each other, and the negative electrode of each holding hole forms electric connection each other.Method for packing provided by the invention is at first inserted one or more High Power LED chips in each holding hole.Then, will insert the High Power LED chip of holding hole, be electrically connected to anode and negative electrode in each holding hole in the serial or parallel connection mode.Subsequently, in each holding hole, insert encapsulating material, in order to the High Power LED chip is cemented in the holding hole.At last, on each holding hole, engage lens, focusing on the light that High Power LED is launched, and when engaging lens, can adjust at single holding hole, to obtain optimized light beam output.
Method for packing of the present invention, described High Power LED chip are III-V family High Power LED chips.
Method for packing of the present invention, each described holding hole also contains at least one radiator structure, to conduct the heat energy that described High Power LED chip produces.
Method for packing of the present invention, described radiator structure further are coupled to a second level radiator.
Method for packing of the present invention, the described anode of each described holding hole is electrically connected to each other by the serial or parallel connection mode.
Method for packing of the present invention, the described negative electrode of each described holding hole is electrically connected to each other by the serial or parallel connection mode.
Method for packing of the present invention, described High Power LED chip are electrically connected to the described anode and the described negative electrode of each described holding hole by the serial or parallel connection mode.
Method for packing of the present invention, described encapsulating material are silicones or epoxy resin.
Array module of the present invention is adjusted to each described lens at each described holding hole and makes light beam output reach optimized position.
High power LED array module of the present invention can significantly reduce volume requiredly, also can promote radiating efficiency and optical coupled performance simultaneously, can adjust single lens at single holding hole, so that the light beam optimization that High Power LED produces.In addition, by in holding hole, inserting a plurality of light-emitting diode chip for backlight unit, not only can produce the high power LED array module of different wave length combination, compare with the High Power LED array of prior art equal volume, unit are also has higher luminous power, can significantly promote the portability and the convenience of high power LED array module.In addition, the method for packing of High Power LED of the present invention has been simplified the encapsulation flow process, has promoted the power output of unit volume, has reduced manufacturing cost.
Description of drawings
Fig. 1 is the profile of prior art high power LED array module.
Fig. 2 is the profile of the present invention's first preferred embodiment.
Fig. 3 is the profile of the present invention's second preferred embodiment.
Fig. 4 is the profile of the present invention's the 3rd preferred embodiment.
Fig. 5 is the profile of the present invention's the 4th preferred embodiment.
Fig. 6 is the profile that high power LED array module of the present invention is coupled to a second level radiator.
Fig. 7 is the flow chart of High Power LED method for packing of the present invention.
Embodiment
High power LED array module of the present invention utilizes the circuit board with a plurality of holding holes, the High Power LED chip is directly inserted in the holding hole encapsulate.Like this, just, can significantly reduce the volume of array module.By in circuit board, disposing radiator structure, can significantly promote radiating efficiency.In addition, the lens on each holding hole can be adjusted at array module, to obtain optimized light beam output.
Fig. 2 is the profile of the present invention's first preferred embodiment high power LED array module.High power LED array module 200 of the present invention contains a circuit board 210, anode 220, negative electrode 230, High Power LED chip 240, radiator structure 250, and lens 260.
Have an anode 220 and a negative electrode 230 in each holding hole 211, and electrically connect, to provide High Power LED chip 240 required power source with High Power LED chip 240.Anode 220 and negative electrode 230 in each holding hole 211, in parallel with the anode 220 of adjacent holding hole 211 respectively with negative electrode 230, and can further be connected to a common anode 221 and a common negative electrode 231 respectively.
High Power LED chip 240 in the holding hole 211 connects with series system.As shown in Figure 2, High Power LED chip 240 is placed on the Metal Contact 212 in the holding hole 211.Each High Power LED chip 240 is electrically connected to each other by lead 213, and is connected to anode 220 and negative electrode 230.
In addition, also has a radiator structure 250 in the circuit board 210.Radiator structure 250 is positioned at the below of Metal Contact 212 corresponding to each High Power LED chip 240, and is connected with it, with the heat energy of conduction High Power LED chip 240 generations when luminous.Single radiator structure 250 further is connected to a common radiator structure 251.Common radiator structure 251 is positioned at the back of circuit board 210, and bigger area of dissipation is provided.Therefore, the heat energy that High Power LED chip 240 produces when luminous can be apace by common radiator structure 251 heat radiations.
Insert holding hole 211 when High Power LED chip 240, be one another in series with lead 213, and with anode 220 and negative electrode 230 form electrically connect after, just encapsulating material is inserted holding hole 211, with fixing High Power LED chip 240.Encapsulating material can be silicones (silicone) or epoxy resin (epoxy).
Subsequently, lens 260 are placed the top of holding hole 211, and bonding with encapsulating material.When cemented lens 260, can adjust the bonding position of lens 260 at each holding hole 211, so that the light beam that each holding hole 211 produces all reaches optimization.
Fig. 3 is the profile of the present invention's second preferred embodiment high power LED array module.High power LED array module 300 of the present invention contains a circuit board 310, anode 320, negative electrode 330, High Power LED chip 340, radiator structure 350, and lens 360.
Have an anode 320 and a negative electrode 330 in each holding hole 311, and electrically connect, to provide High Power LED chip 340 required power source with High Power LED chip 340.Anode 320 and negative electrode 330 in each holding hole 311, in parallel with the anode 320 of adjacent holding hole 311 respectively with negative electrode 330, and can further be connected to a common anode 321 and a common negative electrode 331 respectively.
High Power LED chip 340 in the holding hole 311 connects with parallel way.As shown in Figure 3, High Power LED chip 340 is placed on the Metal Contact 312 in the holding hole 311.Metal Contact 312 is electrically connected to each other by lead 313, and the High Power LED chip 340 of both sides further is connected to anode 320 and negative electrode 330.
In addition, also has a radiator structure 350 in the circuit board 310.Radiator structure 350 is positioned at the below of Metal Contact 312 corresponding to each High Power LED chip 340, and is connected with it, with the heat energy of conduction High Power LED chip 340 generations when luminous.Independent radiator structure 350 further is connected to a common radiator structure 351.Common radiator structure 351 is positioned at the back of circuit board 310, and bigger area of dissipation is provided.Therefore, the heat energy that High Power LED chip 340 produces when luminous can be apace by common radiator structure 351 heat radiations.
Insert holding hole 311 when High Power LED chip 340, be one another in series with lead 313, and with anode 320 and negative electrode 330 form electrically connect after, just encapsulating material is inserted holding hole 311, with fixing High Power LED chip 340.Encapsulating material can be silicones or epoxy resin.
Subsequently, lens 360 are placed the top of holding hole 311, and bonding with encapsulating material.When cemented lens 360, can adjust the bonding position of lens 360 at each holding hole 311, so that the light beam that each holding hole 311 produces all reaches optimization.
Anode between the adjacent holding hole and negative electrode, except that can by Fig. 2 and parallel way shown in Figure 3 form electrically connect, also can form electric connection in series.Fig. 4 is the profile of the present invention's the 3rd preferred embodiment high power LED array module 400.Have holding hole 411a and 411b in the circuit board 410, High Power LED chip 440a and 440b place respectively on the Metal Contact 412a and 412b in holding hole 411a and the 411b.Form electric connection by series system between holding hole 411a and the 411b, anode 420a is connected to common anode 421, and negative electrode 430b is connected to common negative electrode 431.Adjacent negative electrode 430a and anode 420b are one another in series.High Power LED chip 440a and 440b form electric connection respectively by lead 413a and 413b with series system.Metal Contact 412a and 412b are coupled to radiator structure 450a and 450b respectively. Radiator structure 450a and 450b then further are coupled to a common radiator structure 451, with the heat energy of conduction High Power LED chip 440a and 440b generation.Lens 460a and 460b then are placed on respectively on holding hole 411a and the 411b, to focus on the light that High Power LED chip 440a and 440b produce.
Fig. 5 is the profile of the present invention's the 4th preferred embodiment, and wherein, the holding hole in the high power LED array module 500 forms with series system and electrically connects, and High Power LED forms electric connection with parallel way.Have holding hole 511a and 511b in the circuit board 510, High Power LED chip 540a and 540b place respectively on the Metal Contact 512a and 512b in holding hole 511a and the 511b.Form electric connection with series system between holding hole 511a and the 511b, anode 520a is connected to common anode 521, and negative electrode 530b is connected to common negative electrode 531.Adjacent negative electrode 530a and anode 520b then are one another in series.High Power LED chip 540a and 540b form electric connection respectively by lead 513a and 513b with parallel way.Metal Contact 512a and 512b are coupled to radiator structure 550a and 550b respectively. Radiator structure 550a and 550b then further are coupled to a common radiator structure 551, with the heat energy of conduction High Power LED chip 540a and 540b generation.Lens 560a and 560b then are placed on respectively on holding hole 511a and the 511b, to focus on the light that High Power LED chip 540a and 540b produce.
In addition, high power LED array module of the present invention can further be coupled to a second level radiator, further to promote radiating efficiency.As shown in Figure 6, the high power LED array module 200 of Fig. 2 can further be coupled to a second level radiator 270.The common radiator structure 251 of high power LED array module 200 can utilize a heat-conducting glue 271, is bonded to second level radiator 270.By this second level radiator, can further promote the radiating efficiency of high power LED array module integral body.
Fig. 7 is the method for packing of High Power LED of the present invention, is used for encapsulating on a circuit board forming high power LED array module.Circuit board has a plurality of holding holes with array configurations, has an anode and a negative electrode in each holding hole, and the anode of each holding hole is electrically connected to each other, and the negative electrode of each holding hole forms electric connection each other.According to method for packing of the present invention, at first in each holding hole, insert one or more High Power LED chips (step 702).The High Power LED chip can be an III-V family High Power LED chip, and the High Power LED chip of being inserted can have same emission wavelength or different emission.Then, the High Power LED chip of inserting holding hole is electrically connected to anode and negative electrode (step 704) in each holding hole, for example can passes through a lead, connect High Power LED chip in the holding hole in the serial or parallel connection mode.Subsequently, in each holding hole, insert encapsulating material, in order to the High Power LED chip is consolidated in (step 706) in the holding hole.Encapsulating material can be silicones or epoxy resin.At last, on each holding hole, engage lens (step 708), focusing on the light that High Power LED is launched, and when engaging lens, can adjust at single holding hole, to obtain optimized light beam output.
High power LED array module of the present invention can significantly reduce volume requiredly, also can promote radiating efficiency and optical coupled performance simultaneously, can adjust single lens at single holding hole, so that the light beam optimization that High Power LED produces.In addition, by in holding hole, inserting a plurality of light-emitting diode chip for backlight unit, not only can produce the high power LED array module of different wave length combination, compare with the High Power LED array of prior art equal volume, unit are also has higher luminous power, can significantly promote the portability and the convenience of high power LED array module.In addition, the method for packing of High Power LED of the present invention has been simplified the encapsulation flow process, has promoted the power output of unit volume, has reduced manufacturing cost.
Though the present invention by the preferred embodiment explanation as above, this preferred embodiment is not in order to limit the present invention.Those skilled in the art without departing from the spirit and scope of the present invention, should have the ability this preferred embodiment is made various changes and replenished, so protection scope of the present invention is as the criterion with the scope of claims.
Being simply described as follows of symbol in the accompanying drawing:
100: High Power LED
110,210,310,410,510: circuit board
101,220,320,420a, 420b, 520a, 520b: anode
102,230,330,430a, 430b, 530a, 530b: negative electrode
103,240,340,440a:440b, 540a, 540b: High Power LED chip
104,260,360,460a, 460b, 560a, 560b: lens
105,107,213,313,413a, 413b, 513a, 513b: lead
106: groove
200,300,400,500: high power LED array module
250,350,450a, 450b, 550a, 550b: radiator structure
211,311,411a, 411b, 511a, 511b: holding hole
221,321,421,521: common anode
231,331,431,531: common negative electrode
212,312,412a, 412b, 512a, 512b: Metal Contact
251,351,451,551: common radiator structure
270: second level radiator
271: heat-conducting glue
Claims (18)
1, a kind of array module of High Power LED is characterized in that this array module comprises at least:
A circuit board has a plurality of holding holes;
A plurality of anodes, each anode arrangement and are electrically connected to each other in each described holding hole;
A plurality of negative electrodes, each cathode arrangement and are electrically connected to each other in each described holding hole;
A plurality of High Power LED chips, these High Power LED chips are placed in separately in each described holding hole, and are electrically connected to each described anode and each described negative electrode in each described holding hole;
An encapsulating material is filled in each described holding hole, in order to the described High Power LED chip in fixed each described holding hole; And
A plurality of lens, each lens are engaged on each described holding hole, in order to focus on the light of the described High Power LED chip generation in each described holding hole.
2, array module according to claim 1 is characterized in that described High Power LED chip is an III-V family High Power LED chip.
3, array module according to claim 1 is characterized in that each described holding hole also contains at least one radiator structure, to conduct the heat energy that described High Power LED chip produces.
4, array module according to claim 3 is characterized in that described radiator structure further is coupled to a second level radiator.
5, array module according to claim 1 is characterized in that each described anode is electrically connected to each other by the serial or parallel connection mode.
6, array module according to claim 1 is characterized in that each described negative electrode is electrically connected to each other by the serial or parallel connection mode.
7, array module according to claim 1 is characterized in that described High Power LED chip is electrically connected to each described negative electrode and each described anode of each described holding hole configuration by the serial or parallel connection mode.
8, array module according to claim 1 is characterized in that described encapsulating material is silicones or epoxy resin.
9, array module according to claim 1 is characterized in that at each described holding hole each described lens being adjusted to and makes light beam output reach optimized position.
10, a kind of method for packing of High Power LED, encapsulation forms an array module on a circuit board, described circuit board has a plurality of holding holes, each described holding hole has an anode and a negative electrode, the described anode of each described holding hole is electrically connected to each other, and the described negative electrode of each described holding hole is electrically connected to each other, and it is characterized in that described method for packing comprises at least:
Insert at least one High Power LED chip at each described holding hole;
Described High Power LED chip is electrically connected to the described anode and the described negative electrode of each described holding hole;
An encapsulating material is inserted each described holding hole, with fixed described High Power LED chip; And
On each described holding hole, engage lens.
11, method for packing according to claim 10 is characterized in that described High Power LED chip is an III-V family High Power LED chip.
12, method for packing according to claim 10 is characterized in that each described holding hole also contains at least one radiator structure, to conduct the heat energy that described High Power LED chip produces.
13, method for packing according to claim 12 is characterized in that described radiator structure further is coupled to a second level radiator.
14, method for packing according to claim 10 is characterized in that the described anode of each described holding hole is electrically connected to each other by the serial or parallel connection mode.
15, method for packing according to claim 10 is characterized in that the described negative electrode of each described holding hole is electrically connected to each other by the serial or parallel connection mode.
16, method for packing according to claim 10 is characterized in that described High Power LED chip is electrically connected to the described anode and the described negative electrode of each described holding hole by the serial or parallel connection mode.
17, method for packing according to claim 10 is characterized in that described encapsulating material is silicones or epoxy resin.
18, array module according to claim 10 is characterized in that at each described holding hole each described lens being adjusted to and makes light beam output reach optimized position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100810823A CN1758436A (en) | 2004-10-09 | 2004-10-09 | High power LED array module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100810823A CN1758436A (en) | 2004-10-09 | 2004-10-09 | High power LED array module |
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| Publication Number | Publication Date |
|---|---|
| CN1758436A true CN1758436A (en) | 2006-04-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004100810823A Pending CN1758436A (en) | 2004-10-09 | 2004-10-09 | High power LED array module |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008104103A1 (en) * | 2007-03-01 | 2008-09-04 | Tsungwen Chan | Method for manufacturing a plurality of smd leds and structure thereof |
| CN1983590B (en) * | 2005-11-10 | 2010-05-26 | 三星电子株式会社 | High luminance light emitting diode and liquid crystal display using the same |
| CN101261982B (en) * | 2007-03-08 | 2010-06-16 | 探微科技股份有限公司 | LED encapsulation structure and its making method |
| WO2011057433A1 (en) * | 2009-11-16 | 2011-05-19 | Chiang Juhsiang | Light emitting diode lamp bar and manufacture method thereof, light emitting diode lamp tube |
| CN101349388B (en) * | 2007-07-21 | 2011-06-22 | 汽车照明罗伊特林根有限公司 | Light module for a headlamp and method for mounting the lighting assembly |
| CN101432567B (en) * | 2006-04-25 | 2012-06-20 | 皇家飞利浦电子股份有限公司 | Large area LED array and method for its manufacture |
| CN102130113B (en) * | 2006-04-27 | 2013-01-23 | 克里公司 | Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same |
| WO2013139304A1 (en) * | 2012-03-23 | 2013-09-26 | 深圳市瑞丰光电子股份有限公司 | Led module structure |
| CN103939869A (en) * | 2014-04-02 | 2014-07-23 | 安徽金雨灯业有限公司 | Efficient heat dissipation LED aluminum substrate |
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2004
- 2004-10-09 CN CNA2004100810823A patent/CN1758436A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1983590B (en) * | 2005-11-10 | 2010-05-26 | 三星电子株式会社 | High luminance light emitting diode and liquid crystal display using the same |
| US7868332B2 (en) | 2005-11-10 | 2011-01-11 | Samsung Electronics Co., Ltd. | High luminance light emitting diode and liquid crystal display device using the same |
| CN101432567B (en) * | 2006-04-25 | 2012-06-20 | 皇家飞利浦电子股份有限公司 | Large area LED array and method for its manufacture |
| CN102130113B (en) * | 2006-04-27 | 2013-01-23 | 克里公司 | Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same |
| WO2008104103A1 (en) * | 2007-03-01 | 2008-09-04 | Tsungwen Chan | Method for manufacturing a plurality of smd leds and structure thereof |
| CN101261982B (en) * | 2007-03-08 | 2010-06-16 | 探微科技股份有限公司 | LED encapsulation structure and its making method |
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