CN1753187A - Transistor based on bibarrier tunnel junction resonance tunneling effect - Google Patents
Transistor based on bibarrier tunnel junction resonance tunneling effect Download PDFInfo
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Abstract
The present invention relates to comprise: substrate, emitter, base stage, collector electrode and first and second tunnel barrier layers based on the transistor of bibarrier tunnel junction resonance tunneling effect; Wherein first tunnel barrier layer is arranged between emitter and the base stage, and second tunnel barrier layer is between base stage and collector electrode; And between emitter and base stage and the size of the junction area of the tunnel junction of base stage and inter-collector formation be 1 square micron～10000 square microns; The thickness of base stage and the electron mean free path of this layer material can be compared; Having in emitter, base stage and the collector electrode and the direction of the magnetization of a utmost point is only arranged is freely.Owing to adopt dual potential barrier structure, overcome because the Schottky gesture that produces between base stage and the collector electrode.Wherein, base current is a modulation signal, and the direction of the magnetization by changing base stage or collector electrode makes the signal of collector electrode similar to the modulating mode of base current, and resonance tunneling effect promptly takes place, and can obtain amplifying signal under appropriate condition.
Description
Technical field
The present invention relates to a kind of solid-state switch and amplifying device, i.e. transistor, especially a kind of spin transistor device based on bibarrier tunnel junction resonance tunneling effect.
Background technology
From 1988 find giant magnetoresistance effect (GMR) in magnetoresistance effect since, obtained remarkable progress in the research of physics and material science with in using.Johnson[M.Johnson in 1993, Science 260 (1993) 320] proposed one and formed less than the nonmagnetic metal base stage of spin diffusion length and another ferromagnetic metal collector electrode by ferromagnetic metal emitter, thickness: " ferromagnetic metal/nonmagnetic metal/ferromagnetic metal " sandwich all-metal spin transistor.Fig. 1 is the schematic diagram of this all-metal spin transistor.The transistorized speed of this all-metal can be compared with semiconductor Si device, but the low 10-20 of energy consumption doubly, and high about 50 times of density, and radiation hardness have memory function, can form the various logic circuitry, processor of following quantum computer etc.The IBM experimental group had proposed to build the MTJ spin transistor with unipotential afterwards, and its structure is: metal (emitter)/aluminium oxide/ferromagnetic metal (base stage)/semi-conducting material (collector electrode).Yet this transistorlike is owing to the Schottky gesture between base stage and the collector electrode has following shortcoming: 1. lack the control to base stage-collector electrode potential energy; 2. hanging down big leakage current under the emitter-to-base voltage; 3. less collector current.Zhang[X.D.Zhang in 1997, Phys.Rev.B56 (1997) 5484] foretold theoretically and in the magnetic bibarrier tunnel junction, had tunnel magneto resistance (TMR) oscillatory occurences, S.Yuasa[S.Yuasa in 2002, Science 297 (2002) 234] build in the MTJ at unipotential and found spin polarization resonance tunnel-through phenomenon.And the resonance tunnel-through spin transistor that the resonance tunneling effect that utilizes bibarrier tunnel junction is made can overcome the problems referred to above, has the following advantages: big collector current; Variable base stage-collector voltage; Less leakage current; Can be used for magnetosensitive switch, current amplifier spare and oscillating device etc. simultaneously.But since very few to the research of bibarrier tunnel junction, and be difficult to prepare intact bibarrier tunnel junction, and at present, Shang Weiyou is based on the spin transistor device of bibarrier tunnel junction resonance tunneling effect.
Summary of the invention
The objective of the invention is to overcome existing unipotential and build that the MTJ spin transistor lacks control to base stage-collector electrode potential energy, leakage current is big under low emitter-to-base voltage, and the collector current smaller defect; Thereby provide a kind of big collector current that has, with variable base stage-collector voltage, simultaneously have again less leakage current, can be used for magnetosensitive switch, current amplifier spare and oscillating device, based on the transistor of bibarrier tunnel junction resonance tunneling effect.
The object of the present invention is achieved like this:
Shown in Fig. 2 a, a kind of transistor provided by the invention based on bibarrier tunnel junction resonance tunneling effect, comprise: a substrate 1, emitter 3, base stage 5, collector electrode 7 and first tunnel barrier layer 4, wherein first tunnel barrier layer 4 is arranged between emitter 3 and the base stage 5; It is characterized in that: also comprise second tunnel barrier layer 6; This second tunnel barrier layer 6 is between base stage 5 and collector electrode 7; And the size of the junction area of the tunnel junction of 5 of emitter 3 and base stages and base stage 5 and 7 formation of collector electrode is 1 square micron～10000 square microns; The thickness of described base stage 5 should can be compared with the electron mean free path of this layer material; Having and only have the direction of the magnetization of a utmost point in described emitter 3, base stage 5 and the collector electrode 7 is freely, and promptly the direction of the magnetization of this layer can change with externally-applied magnetic field.
Described substrate comprises by insulating material or nonisulated material, or semi-conducting material is made; Described insulating material comprises: Al
2O
3, SiO
2And Si
3N
4, the thickness of its substrate is that 0.3mm is to 5mm.
Described non-insulating material comprises: Cu, Al.
Described semi-conducting material comprises: Si, Ga, GaN, GaAs, GaAlAs, InGaAs or InAs.
In above-mentioned technical scheme, when substrate is non-insulating material or semi-conducting material when making, also be included in an insulation material layer 2 is set on the substrate, the thickness of this insulation material layer 2 is: 10-500nm.Described insulation material layer 2 comprises: alundum (Al (Al
2O
3), silicon dioxide (SiO
2), silicon nitride (Si
3N
4), its thickness is: 50～500nm.
In above-mentioned technical scheme; also comprise a conductive protecting layer 8; this conductive protecting layer 8 is arranged on emitter 3, base stage 5 and the collector electrode 7, and this conductive protecting layer 8 comprises: gold, platinum, silver, aluminium, tantalum etc. or other anti-oxidation metal electric conducting material are made, and its thickness is: 0.5～10nm.
In above-mentioned technical scheme, described emitter 3 comprises: with ferrimagnet FM, semimetal magnetic material HM, magnetic semiconductor material MSC or metal and YBa such as organo-metallic material OM, semi-conducting material SC, nonmagnetic material NM or Nb
2Cu
3O
7Superconductor SP Deng Cu-O series makes, and its thickness is: 2nm～20nm.
In above-mentioned technical scheme, described base stage 5 comprises: ferrimagnet FM, semimetal magnetic material HM, magnetic semiconductor material MSC or organo-metallic material OM, nonmagnetic material NM, semi-conducting material SC; The thickness of this base stage 5 is: 2nm～20nm.
In above-mentioned technical scheme, described collector electrode 7 comprises: ferrimagnet FM, semimetal magnetic material HM magnetic semiconductor material MSC or organo-metallic material OM, nonmagnetic material NM, semi-conducting material SC; The thickness of this collector electrode 7 is: 2nm～20nm.
Described ferrimagnet comprises: 3d transition group magnetic metals such as Fe, Co, Ni, rare earth metals such as Sm, Gd, Nd, ferromagnetic alloies such as Co-Fe, Co-Fe-B, Ni-Fe, Gd-Y.
In above-mentioned technical scheme, the direction of the ferromagnetic magnetization can be by the antiferromagnetic layer pinning, and this antiferromagnetic layer can be made or antiferromagnetic materials such as other CoO, NiO, PtCr constitute by the alloy material of Ir, Fe, Rh, Pt or Pd and Mn.
Described semimetal magnetic material HM comprises: Fe
3O
4, CrO
2, La
0.7Sr
0.3MnO
3And Co
2Heussler alloys such as MnSi.
Described nonmagnetic material NM comprises: Au, Ag, Pt, Cu, Ru, Al, Cr or and alloy.
Described magnetic semiconductor material MSC comprises: ZnO, TiO that Fe, Co, Ni, V, Mn mix
2, HfO
2And SnO
2, also comprise: GaAs, InAs, GaN and ZnTe that Mn mixes.
Described organo-metallic material OM comprises two metallocene macromolecule organo-metallic material and manganese stearates.
Described semiconductor SC comprises: Si, Ga, GaN, GaAs, GaAlAs, InGaAs or InAs.
In above-mentioned technical scheme, described first tunnel barrier layer 4 and second tunnel barrier layer 6 are made by insulating material, and this insulating material comprises metal oxide dielectric film, metal nitride dielectric film, organic or inorganic insulated with material film, diamond like carbon film or EuS; The thickness of this first tunnel barrier layer is: 0.5～3.0nm; The thickness of second tunnel barrier layer is: 0.5～4.0nm; Wherein the thickness of two tunnel barrier layers can be identical or inequality with material.
The metal of described metal oxide dielectric film and metal nitride dielectric film is selected from the metallic element of Al, Mg, Ta, Zr, Zn, Sn, Nb and Ga.
The thickness of base stage should be comparable with the electron mean free path of this layer material in this structure, like this, when electronics when emitter is tunneling to collector electrode, kept the memory of electronic spin phase place owing to electronics suffered scattering in base stage 5 is more weak.
More than the transistor of the bibarrier tunnel junction resonance tunnel effect of Gou Chenging is by following principle work.
With Fig. 3 a is that example describes, as long as emitter 3, base stage 5 and collector electrode 7 are grounded, emitter 3, base stage 5, collector electrode 7, first tunnel barrier layer 4 and second tunnel barrier layer 6 just can be in a kind of thermal equilibrium state.Fig. 4 is the schematic diagram of the bibarrier tunnel junction electron resonance tunnelling of embodiment 1, the figure shows the tunnelling electronics and is in tunnelling process under parallel, the antiparallel two states in the emitter 3 and the direction of the magnetization of collector electrode 7.When parastate, most tunnelling electronic energy tunnellings that spin direction is identical with the direction of the magnetization of collector electrode 7 in the emitter 3 are crossed potential barrier and intermediate metal layer, and the minority spinning electron opposite with the direction of the magnetization of collector electrode 7 or caused that by impurity scattering the electronics that counter-rotating takes place spin direction can not be tunneling to collector electrode 7, at this moment, collector electrode 7 has bigger electric current to pass through; And when antiparallel state, have only the minority spin direction tunnelling electronic energy identical to be tunneling to collector electrode 7 with the direction of the magnetization of collector electrode 7, and most spin directions tunnelling electronics opposite with the direction of the magnetization of collector electrode 7 can not be tunneling to collector electrode 7, at this moment, collector electrode 7 has less current to pass through.Simultaneously, because the direction of the magnetization of emitter 3 fixes, and the direction of the magnetization of collector electrode 7 can change with magnetic field, and the direction of the magnetization that therefore can be by changing collector electrode 7 changes the size of current of collector electrode 7.Its forming process is as follows, base current is a modulation signal, thereby the direction of the magnetization by changing collector electrode 7 makes the signal of collector electrode 7 similar to the modulating mode of base current, and resonance tunneling effect promptly takes place, under appropriate condition, can obtain amplifying signal.
A kind of transistorized preparation method based on bibarrier tunnel junction resonance tunneling effect provided by the invention comprises the following steps:
(1) by magnetron sputtering apparatus or other made membrane equipment, on silicon substrate 1, preparing one is the nonmagnetic metal layer NM of 4nm or the base stage 5 of semiconductor layer SC or magnetic material layer (FM, HM, MSC, OM) formation by thickness;
(2) then, first tunnel barrier layer 4 and second tunnel barrier layer 6 are formed on the base stage 5;
(3) emitter 3 and the collector electrode of being made by magnetic material layer (comprising ferrimagnet FM or semimetal magnetic material HM or magnetic semiconductor material MSC, organo-metallic material OM) 7 is formed on tunnel barrier layer 4 and 6;
(4) adopt different coercitive magnetic materials to make emitter 3 and collector electrode 7, or the relative size by micro-processing technology control emitter 3 and collector electrode 7 junction areas and shape, make that the adverse field of emitter 3 and collector electrode 7 is different, thereby, the direction relative fixed of the magnetization of a carbon electrode, the direction counter-rotating of the magnetization of another carbon electrode is then free relatively;
(5) last conductive protecting layer 8 of being made by oxidation resistant metal such as gold, platinum is arranged on base stage 5, emitter 3 and the collector electrode 7.
The invention has the advantages that:
Bibarrier tunnel junction transistor device of the present invention, owing to adopt dual potential barrier structure, overcome because the Schottky gesture that produces between base stage and the collector electrode, and this transistor has less leakage current and big collector current, device based on this structure has certain curtage gain simultaneously, i.e. the input of small-signal can produce bigger output.Wherein, base current is a modulation signal, the direction of the magnetization by changing base stage or collector electrode, thus make the signal of collector electrode similar to the modulating mode of base current, resonance tunneling effect promptly takes place, under appropriate condition, can obtain amplifying signal.
Description of drawings
Fig. 1 is based on the all-metal spin transistor of " ferromagnetic metal/nonmagnetic metal/ferromagnetic metal " structure
Fig. 2 is the transistor arrangement schematic diagram based on bibarrier tunnel junction resonance tunneling effect of the present invention
Fig. 3 a is embodiments of the invention 1～8,12 transistor arrangement profile
Fig. 3 b is the transistor arrangement profile of embodiments of the invention 9,10
Fig. 3 c is the transistor arrangement profile of embodiments of the invention 11
Fig. 3 d is the transistor arrangement profile of embodiments of the invention 13～16
Fig. 4 a is the schematic diagram of the bibarrier tunnel junction electron resonance tunnelling of embodiment 1
Fig. 4 b is the schematic diagram of the bibarrier tunnel junction electron resonance tunnelling of embodiment 1
Fig. 5 is the schematic diagram of the bibarrier tunnel junction electron resonance tunnelling of embodiment 2
Fig. 6 is the schematic diagram of the bibarrier tunnel junction electron resonance tunnelling of embodiment 4
Fig. 7 is the schematic diagram of the bibarrier tunnel junction electron resonance tunnelling of embodiment 5
Fig. 8 is the schematic diagram of the bibarrier tunnel junction electron resonance tunnelling of embodiment 9
Fig. 9 is the schematic diagram of the bibarrier tunnel junction electron resonance tunnelling of embodiment 10
The drawing explanation:
Substrate-1 insulating barrier-2 emitter-3
First tunnel barrier layer-4 base stage-5, second tunnel barrier layer-6
Collector electrode-7 conductive protecting layer-8
Embodiment:
Below in conjunction with drawings and Examples the present invention is done explanation in further detail
With reference to figure 3a, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention.The spin transistor of this bibarrier tunnel junction resonance tunneling effect, by a thickness be the Si material of 0.4mm as substrate 1, on Si substrate 1, form one deck by SiO
2Constitute the thick insulating barrier 2 of 10nm, form an emitter 3 on insulating barrier 2, this emitter 3 is that the antiferromagnetic layer Ir-Mn of 12nm and the Fe of 8nm constitute by thickness, and this antiferromagnetic layer Ir-Mn is used for fixing the direction of the magnetization of emitter 3; Adopt Al
2O
3First tunnel barrier layer 4 of material is formed on the emitter 3; Its first tunnel barrier layer, 4 thickness are 1nm.And formation one thickness is the base 5 of 8nm on first tunnel barrier layer 4, and this base stage 5 is made by nonmagnetic metal Cu.An Al
2O
3Layer is formed on the base stage 5, and as second tunnel barrier layer 6, its second tunnel barrier layer, 6 thickness are 1.6nm; A collector electrode 7 of being made by the Co-Fe magnetic material layer is formed on second tunnel barrier layer 6, and thickness is 8nm, and the direction of the magnetization of this collector electrode 7 is freely, can change with the external magnetic field; Adopt a conductive protecting layer 8 of Pt or Au material to be arranged on emitter 3, base stage 5 and the collector electrode 7, conductive protecting layer 8 thickness are 10nm.
In the transistor of present embodiment, the size of the junction area of the tunnel junction of 5 of emitter 3 and base stages and base stage 5 and 7 formation of collector electrode is 1 square micron.
Embodiment 2
With reference to figure 3a, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention.The spin transistor of this bibarrier tunnel junction resonance tunneling effect, by a thickness be the Si material of 0.6mm as substrate 1, on Si substrate 1, form one deck by SiO
2Constitute the thick insulating barrier 2 of 100nm, form an emitter 3 on insulating barrier 2, this emitter 3 is that antiferromagnetic layer Fe-Mn and the thickness of 15nm is the La of 4nm by thickness
0.7Sr
0.3MnO
3The semi-metallic layer constitutes, and the direction of the magnetization of this emitter 3 is fixed; Adopt SrTiO
3First tunnel barrier layer 4 of material is formed on the emitter 3, and its first tunnel barrier layer, 4 thickness are 1.0nm; And formation one thickness is the base stage 5 of 4nm on first tunnel barrier layer 4, and this base stage 5 is made of nonmagnetic material Ru layer; A SrTiO
3Layer is formed on the base stage 5, and as second tunnel barrier layer 6, its second tunnel barrier layer, 6 thickness are 1.3nm; One by La
0.7Sr
0.3MnO
3The collector electrode 7 that the semi-metallic layer is made is formed on second tunnel barrier layer 6, and thickness is 4nm, and the direction of the magnetization of this collector electrode 7 is free relatively, can change with the external magnetic field; Adopt a conductive protecting layer of Pt or Au material to be arranged on emitter 3, base stage 5 and the collector electrode 7, conductive protecting layer 8 thickness are 6nm.
Fig. 5 is the schematic diagram of this bibarrier tunnel junction electron resonance tunnelling.In this structure, because La
0.7Sr
0.3MnO
3Semimetal magnetic material has can be up to 100% spin polarizability, and when emitter 3 was parallel with the direction of the magnetization of collector electrode 7, nearly all electronics all was tunneling to collector electrode 7, and this moment, collector electrode 7 had bigger electric current to pass through.On the contrary, be in when opposite when being in the direction of emitter 3 with the magnetization of collector electrode 7, only have tunnelling electronics seldom to be tunneling to collector electrode 7 by scattering or other effects, this moment, collector electrode 7 had less current to pass through.The same with embodiment 1 described principle, also can pass through the direction of the magnetization of change collector electrode 7, thereby make the tunnelling electronics resonance tunnel-through take place at emitter 3 and 7 on collector electrode, under appropriate condition, make collector electrode 7 obtain amplified current.
In the transistor of present embodiment, the size of the junction area of the tunnel junction of 5 of emitter 3 and base stages and base stage 5 and 7 formation of collector electrode is 100 square microns.
With reference to figure 3a, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention.
The spin transistor of this bibarrier tunnel junction resonance tunneling effect, by a thickness be the Si material of 0.6mm as substrate 1, on Si substrate 1, form one deck by SiO
2Constitute the thick insulating barrier 2 of 300nm, form an emitter 3 on insulating barrier 2, this emitter 3 is that the GaMnAs magnetic semiconductor material layer of 4nm constitutes by thickness.The direction of the magnetization of this emitter 3 is relatively freely, can change with the external magnetic field; Adopt first tunnel barrier layer 4 of MgO material to be formed on the emitter 3; Its first tunnel barrier layer, 4 thickness are 1.0nm.And formation one thickness is the base stage 5 of 5nm on first tunnel barrier layer 4, and this base stage 5 is made of nonmagnetic material Cr layer; A MgO layer is formed on the base stage 5, and as second tunnel barrier layer 6, its second tunnel barrier layer, 6 thickness are 1.3nm; A collector electrode 7 of being made by GaMnAs magnetic semiconductor material layer is formed on second tunnel barrier layer 6, and thickness is 8nm, and the antiferromagnet PtCr that thickness is 20nm is formed on the collector electrode 7, is used for fixing the direction of the magnetization of collector electrode 7.Adopt a conductive protecting layer of Pt or Au material to be arranged on emitter 3, base stage 5 and the collector electrode 7, conductive protecting layer 8 thickness are 6nm.
In the transistor of present embodiment, the size of the junction area of the tunnel junction of 5 of emitter 3 and base stages and base stage 5 and 7 formation of collector electrode is 1000 square microns.
With reference to figure 3a, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention.
The spin transistor of this bibarrier tunnel junction resonance tunneling effect is the Al of 1mm by a thickness
2O
3Material is as substrate 1, at Al
2O
3Form an emitter 3 on the substrate 1, this emitter 3 is that the antiferromagnetic layer Ir-Mn of 15nm and Co-Fe-B alloy material layer that thickness is 8nm constitute by thickness.The direction of the magnetization of this emitter 3 is fixed; Adopt first tunnel barrier layer 4 of MgO material to be formed on the emitter 3; Its first tunnel barrier layer, 4 thickness are 1.8nm.And formation one thickness is the base stage 5 of 4nm on first tunnel barrier layer 4, and this base stage 5 is made of the bigger Co-Fe magnetic material layer of coercive force; The direction of its magnetization also is relatively-stationary, and parallel with the direction of the magnetization of emitter 3.A MgO layer is formed on the base stage 5, and as second tunnel barrier layer 6, its second tunnel barrier layer, 6 thickness are 2.7nm; A collector electrode 7 of being made by the less Ni-Fe magnetic material layer of coercive force is formed on second tunnel barrier layer 6, and thickness is 8nm, and the direction of the magnetization of this collector electrode 7 is free relatively, can change with the external magnetic field; Adopt a conductive protecting layer of Pt or Au material to be arranged on emitter 3, base stage 5 and the collector electrode 7, conductive protecting layer 8 thickness are 6nm.
The operation principles of this bibarrier tunnel junction spin transistor is as follows, and Fig. 6 is the schematic diagram of this transistorized bibarrier tunnel junction electron resonance tunnelling.Because base material is a magnetic material, its transport property and spin correlation.Therefore, when the direction of the magnetization of emitter 3, base stage 5 and collector electrode 7 is in parastate, the most electronics consistent with the direction of the magnetization of three electrodes in upper, middle and lower will pass base stage 5 and two barrier layers enter collector electrode 7 in the emitter 3; And in the emitter 3 with the opposite minority electrons of direction of the magnetization of three electrodes in upper, middle and lower, will be subjected to very strong scattering process and can not be tunneling to collector electrode 7, however, the electric current of collector electrode 7 is still bigger in this case; And when the direction of the direction of the magnetization of collector electrode 7 and the magnetization of base stage 5 is opposite, though the electronic energy tunnelling of most spin subbands is crossed first tunnel barrier layer in the emitter 3, but owing to the direction of the magnetization of collector electrode 7 be subjected on the contrary mutually strong scattering process (being equivalent to specular scattering) rest in the middle of base stage 5 vibrate, the tunnelling electronics is only arranged seldom owing to be subjected to impurity scattering or other inelastic scattering effects cause spin flip conversion, can enter collector electrode 7 by second tunnel barrier layer, this moment, the electric current of collector electrode 7 was less.Principle with aforementioned embodiment is the same, also can pass through the direction of the magnetization of change collector electrode 7, thereby makes the tunnelling electronics at emitter 3 and 7 on collector electrode resonance tunnel-through take place, and obtains amplified current at collector electrode 7 under appropriate condition.
In the transistor of present embodiment, the size of the junction area of the tunnel junction of 5 of emitter 3 and base stages and base stage 5 and 7 formation of collector electrode is 10000 square microns.
With reference to figure 3a, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention.
The spin transistor of this bibarrier tunnel junction resonance tunneling effect is the Si of 1mm by a thickness
3N
4Material is as substrate 1, at Si
3N
4Form an emitter 3 on the substrate 1, this emitter 3 is that antiferromagnetic layer Ir-Mn and the thickness of 15nm is the La of 8nm by thickness
0.7Sr
0.3MnO
3The semi-metallic layer constitutes.The direction of the magnetization of this emitter 3 is fixed; Adopt SrTiO
3First tunnel barrier layer 4 of material is formed on the emitter 3; Its first tunnel barrier layer, 4 thickness are 1.0nm.And formation one thickness is the base stage 5 of 4nm on first tunnel barrier layer 4, and this base stage 5 is by La
0.7Sr
0.3MnO
3The semi-metallic layer constitutes; The direction of its magnetization also is relatively-stationary, and parallel with the direction of the magnetization of emitter 3.A SrTiO
3Layer is formed on the base stage 5, and as second tunnel barrier layer 6, its second tunnel barrier layer, 6 thickness are 1.3nm; One by the less Co of coercive force
2The collector electrode 7 that MnSi semi-metallic layer is made is formed on second tunnel barrier layer 6, and thickness is 4nm, and the direction of the magnetization of this collector electrode 7 is free relatively, can change with the external magnetic field; Adopt a conductive protecting layer of Pt or Au material to be arranged on emitter 3, base stage 5 and the collector electrode 7, conductive protecting layer 8 thickness are 6nm.
The operation principles of this bibarrier tunnel junction spin transistor is similar to embodiment 4, and Fig. 7 is the schematic diagram of this transistorized bibarrier tunnel junction electron resonance tunnelling.Because semimetal magnetic material has the spin polarizability up to 100%, when emitter 3, when base stage 5 is parallel with the direction of the magnetization of collector electrode 7, nearly all tunnelling electronics all is tunneling to collector electrode 7, and this moment, collector electrode 7 had bigger electric current to pass through.On the contrary, when emitter 3, base stage 5 are antiparallel with the direction of the magnetization of collector electrode 7, only have tunnelling electronics seldom to be tunneling to collector electrode 7 by scattering or other effects, this moment, collector electrode 7 had less current to pass through.The same with previous examples, also can pass through the direction of the magnetization of change collector electrode 7, thereby make the tunnelling electronics resonance tunnel-through take place at emitter 3 and 7 on collector electrode, under appropriate condition, make collector electrode 7 obtain amplified current.
With reference to figure 3a, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention, it is that the Si of 1mm makes substrate 1 by a thickness, forms one deck by SiO on Si substrate 1
2Constitute the thick insulating barrier 2 of 500nm, form an emitter 3 on insulating barrier 2, this emitter 3 is that the antiferromagnetic layer Ni-Mn of 15nm and thickness are that the ZnO magnetic semiconductor material layer that 4nm mixes Co constitutes by thickness.The direction of the magnetization of this emitter 3 is fixed; Adopt ZrO
2First tunnel barrier layer 4 of material is formed on the emitter 3; Its first tunnel barrier layer, 4 thickness are 1.0nm.And formation one thickness is the base stage 5 of 4nm on first tunnel barrier layer 4, and this base stage 5 is made of the ZnO magnetic semiconductor material layer of mixing Co; The direction of its magnetization is relatively freely, can change with the external magnetic field; A ZrO
2Layer is formed on the base stage 5, and as second tunnel barrier layer 6, its second tunnel barrier layer, 6 thickness are 1.3nm; One is that 4nm mixes the collector electrode 7 that the ZnO magnetic semiconductor material of Co and antiferromagnetic layer Ni-Mn that thickness is 15nm make and is formed on second tunnel barrier layer 6 by thickness, the direction of the magnetization of this collector electrode 7 is relatively-stationary, and is parallel with the direction of the magnetization of emitter 3; Adopt a conductive protecting layer of Pt or Ta material to be arranged on emitter 3, base stage 5 and the collector electrode 7, conductive protecting layer 8 thickness are 6nm.
Fig. 8 is the schematic diagram of this transistorized bibarrier tunnel junction electron resonance tunnelling.As different from Example 4: in embodiment 4, the direction of the magnetization by changing collector electrode 7 changes the electric current of collector electrode 7; And in the present embodiment, because the direction of the magnetization of emitter 3 and collector electrode 7 is relatively-stationary, the direction of having only the magnetization of base stage 5 is freely, and therefore, the direction of the magnetization by changing base stage 5 changes the electric current of collector electrode 7.Its operation principles is similar to embodiment 4.Omit the detailed operation process at this.
With reference to figure 3a, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention, this transistor is that the GaAs of 1mm makes substrate 1 by a thickness, forms one deck by SiO on GaAs substrate 1
2Constitute the thick insulating barrier 2 of 260nm, form an emitter 3 on insulating barrier 2, this emitter 3 is that the antiferromagnetic layer Ir-Mn of 10nm and manganese stearate organo-metallic material layer that thickness is 8nm constitute by thickness.The direction of the magnetization of this emitter 3 is fixed; Adopt Al
2O
3First tunnel barrier layer 4 of material is formed on the emitter 3; Its first tunnel barrier layer, 4 thickness are 1.0nm.And formation one thickness is the base stage 5 of 4nm on first tunnel barrier layer 4, and this base stage 5 is made of manganese stearate organo-metallic material layer; The direction of its magnetization is relatively freely, can change with the external magnetic field; An Al
2O
3Layer is formed on the base stage 5, and as second tunnel barrier layer 6, its second tunnel barrier layer, 6 thickness are 1.3nm; One is that the collector electrode 7 that the manganese stearate organo-metallic material layer of 4nm and antiferromagnetic layer Ir-Mn that thickness is 10nm make is formed on second tunnel barrier layer 6 by thickness, the direction of the magnetization of this collector electrode 7 is relatively-stationary, and is parallel with the direction of the magnetization of emitter 3; Adopt a conductive protecting layer of Pt or Ta material to be arranged on emitter 3, base stage 5 and the collector electrode 7, conductive protecting layer 8 thickness are 6nm.
Its operation principles is similar to embodiment 6.Omit the detailed operation process at this.
Embodiment 8
With reference to figure 3a, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention, this spin transistor is that the GaAs of 1mm makes substrate 1 by a thickness, forms one deck by SiO on GaAs substrate 1
2Constitute the thick insulating barrier 2 of 400nm, on insulating barrier 2, form an emitter 3, this emitter 3 is that the Ru of Co-Fe, 0.9nm of antiferromagnetic layer Ir-Mn, 4nm of 10nm and the Co-Fe-B magnetic material layer that thickness is 4nm constitute by thickness, and the direction of the magnetization of this emitter 3 is fixed; Adopt first tunnel barrier layer 4 of MgO material to be formed on the emitter 3; Its first tunnel barrier layer, 4 thickness are 1.8nm.And formation one thickness is the base stage 5 of 4nm on first tunnel barrier layer 4, and this base stage 5 is made of the Co-Fe-B magnetic material layer; The direction of its magnetization is relatively freely, can change with the external magnetic field; A MgO layer is formed on the base stage 5, and as second tunnel barrier layer 6, its second tunnel barrier layer, 6 thickness are 2.5nm; One is that the Co-Fe of Ru, 4nm of Co-Fe-B magnetic material layer, 0.9nm of 4nm and the collector electrode 7 that antiferromagnetic layer Ir-Mn that thickness is 10nm makes are formed on second tunnel barrier layer 6 by thickness, the direction of the magnetization of this collector electrode 7 is relatively-stationary, and is parallel with the direction of the magnetization of emitter 3; Adopt a conductive protecting layer of Pt or Ta material to be arranged on emitter 3, base stage 5 and the collector electrode 7, conductive protecting layer 8 thickness are 6nm.
Should be noted that, wherein Co-Fe/Ru/Co-Fe-B is artificial synthetic anti-ferromagnetic material, present embodiment adopts antiferromagnetic materials Ir-Mn and the artificial antiferromagnetic materials of Co-Fe/Ru/Co-Fe-B to fix the direction of the magnetospheric magnetization, adopt this structure to help improving exchange bias field, thereby improve transistorized performance.Its operation principles is similar to embodiment 6, omits the detailed operation process at this.
Embodiment 9
With reference to figure 3b, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention, this spin transistor is on the substrate 1 that is made of Si or GaAs semi-conducting material, forms one deck by silicon dioxide (SiO
2), or other Al
2O
3, Si
3N
4Insulating material is made the thick insulating barrier of 120nm 2, and this insulating barrier is used to isolate base stage 5 and emitter 3, and this semiconductor chip serves as emitter 3; Use Al for one
2O
3Or first tunnel barrier layer 4 of MgO material is formed on the emitter 3, and its thickness is 1.0nm; And to form one on first tunnel barrier layer 4 be the base stage 5 that the Ni-Fe magnetic material layer of 6nm constitutes by thickness, and the direction of the magnetization of this Ni-Fe layer is freely, can change with external magnetic field or electric current guiding; One by Al
2O
3Or second tunnel barrier layer 6 of MgO material is formed on the base stage 5, and its second tunnel barrier layer, 5 thickness are 1.6nm; The collector electrode 7 that thickness of being made by the Co-Fe-Ni magnetic material is 6nm is formed on second tunnel barrier layer 6, and the direction of the magnetization of this layer is fixed by antiferromagnetic layer Fe-Mn pinning.One is adopted the conductive protecting layer 8 of Au or Pt material to be arranged on emitter 3, base stage 5 and the collector electrode 7, and thickness is 6nm.
Fig. 9 is the schematic diagram of this transistorized bibarrier tunnel junction electron resonance tunnelling.The figure shows out the tunnelling electronics and be in tunnelling process under parallel, the antiparallel two states in base stage 5 and the direction of the magnetization of collector electrode 7.When parastate, most tunnelling electronic energy tunnellings that spin direction is identical with the direction of the magnetization of collector electrode 7 in the emitter 3 are crossed potential barrier and middle base stage 5, and the minority spinning electron opposite with the direction of the magnetization of collector electrode 7 or caused that by impurity scattering the electronics that counter-rotating takes place spin direction can not be tunneling to collector electrode 7, at this moment, collector electrode 7 has bigger electric current to pass through; And when antiparallel state, have only the minority spin direction tunnelling electronic energy identical to be tunneling to collector electrode 7 with the direction of the magnetization of collector electrode 7, and most spin directions tunnelling electronics opposite with the direction of the magnetization of collector electrode 7 can not be tunneling to collector electrode 7, at this moment, collector electrode 7 has less current to pass through.Simultaneously, because the direction of the magnetization of collector electrode 7 fixes, and the direction of the magnetization of base stage 5 can change with magnetic field, and the direction of the magnetization that therefore can be by changing base stage 5 changes the size of current of collector electrode 7.Its forming process is as follows, base stage 5 electric currents are modulation signal, thereby the direction of the magnetization by changing base stage 5 makes the signal of collector electrode 7 similar to the modulating mode of base stage 5 electric currents, and resonance tunneling effect promptly takes place, under appropriate condition, can obtain amplifying signal.
Embodiment 10
With reference to figure 3b, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention, this spin transistor forms one deck by silicon dioxide (SiO on the substrate 1 that is made of Si or GaAs semi-conducting material
2) or similar material make the thick insulating barrier of 360nm 2; Forming by thickness at insulating barrier 2 is the superconductor YBa of 10nm
2Cu
3O
7The emitter of making 3; Use Al for one
2O
3First tunnel barrier layer 4 of material is formed on the emitter 3, and its thickness is 1.0nm; And to form one on first tunnel barrier layer 4 be the base stage 5 that the Sm magnetic material layer of 3nm constitutes by thickness, and the direction of the magnetization of this Sm layer is freely, can change with external magnetic field or electric current guiding; One by Al
2O
3Second tunnel barrier layer 6 of material is formed on the base stage 5, and its second tunnel barrier layer, 5 thickness are 1.6nm; The collector electrode 7 that thickness of being made by the Gd-Y magnetic material is 6nm is formed on second tunnel barrier layer 6, and the direction of the magnetization of this layer is by antiferromagnetic layer Pd-Mn or Rh-Mn pinning and fix.One is adopted the conductive protecting layer 8 of Au or Ta material to be arranged on emitter 3, base stage 5 and the collector electrode 7, and thickness is 5nm.
Its operation principles is similar to embodiment 9, omits the detailed operation process at this.
Embodiment 11
With reference to figure 3c, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention.
The spin transistor of this bibarrier tunnel junction resonance tunneling effect on the substrate 1 that is made of Si or GaAs semi-conducting material, forms one deck by silicon dioxide (SiO
2) or the insulating barrier 2 made of similar material, this insulating barrier is used to isolate base stage 5 and collector electrode 7, and this semiconductor chip serves as collector electrode 7; Use Al for one
2O
3Or first tunnel barrier layer 4 of MgO material is formed on the collector electrode 7, and its thickness is 1.0nm; And to form one on first tunnel barrier layer 4 be the base stage 5 that the Ni-Fe magnetic material layer of 4nm constitutes by thickness, and the direction of the magnetization of this Ni-Fe layer is freely, can change with external magnetic field or electric current guiding; One by Al
2O
3Or second tunnel barrier layer 6 of MgO material is formed on the base stage 5, and its second tunnel barrier layer, 5 thickness are 1.6nm; The emitter 3 that thickness of being made by the Co-Fe magnetic material is 6nm is formed on second tunnel barrier layer 6, and the direction of the magnetization of this layer is fixed by antiferromagnetic layer Pt-Mn pinning.One is adopted the conductive protecting layer 8 of Au or Pt material to be arranged on emitter 3, base stage 5 and the collector electrode 7, and thickness is 6nm.
Its operation principles is similar to embodiment 9, omits the detailed operation process at this.
Embodiment 12
With reference to figure 3a, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention.
The spin transistor of this bibarrier tunnel junction resonance tunneling effect on the substrate 1 that is made of GaN or GaAs semi-conducting material, forms one deck by silicon dioxide (SiO
2) or similar material make the thick insulating barrier of 100nm 2; Forming by thickness at insulating barrier 2 is the emitter 3 that the nonmagnetic metal Cu of 10nm makes; Use Al for one
2O
3Or first tunnel barrier layer 4 of MgO material is formed on the emitter 3, and its thickness is 1.0nm; And one of formation is the CrO of 5nm by thickness on first tunnel barrier layer 4
2The base stage 5 that magnetic material layer constitutes, the direction of the magnetization of this Ni-Fe layer is freely, can change with external magnetic field or electric current guiding; One by Al
2O
3Or second tunnel barrier layer 6 of MgO material is formed on the base stage 5, and its second tunnel barrier layer, 5 thickness are 1.6nm; One by CrO
2The thickness that semi-metallic is made is that the collector electrode 7 of 6nm is formed on second tunnel barrier layer 6, and the direction of the magnetization of this layer is fixed by antiferromagnetic layer Ni-Mn pinning.One is adopted the conductive protecting layer 8 of Au or Ta material to be arranged on emitter 3, base stage 5 and the collector electrode 7, and thickness is 5nm.
Embodiment 13
With reference to figure 3d, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention.
On the substrate 1 that is made of the InGaAs semi-conducting material, forming by thickness is the base stage 5 that the GaAs of 10nm makes; Adopt Al
2O
3First tunnel barrier layer of making 4 and 6 is formed on the base stage 5; With thickness is that emitter 3 and the collector electrode 7 that the Co-Fe of 8nm makes is formed on first tunnel barrier layer 4 and 6, and its thickness is 6nm; Micro-processing technologies such as employing photoetching are controlled the relative size in emitter 3 and collector electrode 7 interfaces, make their adverse field different, thereby another carbon electrode of direction relative fixed of the magnetization of a carbon electrode are then free relatively.The thickness of an employing Au material is that the conductive protection electrode layer 8 of 6nm is arranged on emitter 3, base stage 5 and the collector electrode 7, and its thickness is 8nm.Wherein the distance between emitter 3 and the collector electrode 7 is less than 5 microns.
Embodiment 14
With reference to figure 3d, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention, this spin transistor is on the substrate 1 that a Si semi-conducting material constitutes, and forming by thickness is the base stage 5 that the Co-Fe-B of 10nm makes; First tunnel barrier layer 4 and 6 that adopts MgO to make is formed on the base stage 5; Antiferromagnet Ir-Mn and thickness by thickness 15nm are the La of 6nm
0.7Sr
0.3MnO
3Emitter of making 3 and collector electrode 7 are formed on first tunnel barrier layer 4 and 6, and antiferromagnet Ir-Mn is formed at La
0.7Sr
0.3MnO
3On; Adopt the relative size in photoetching technique control emitter 3 and collector electrode 7 interfaces.The thickness of an employing Au material is that the conductive protection electrode layer 8 of 6nm is arranged on emitter 3, base stage 5 and the collector electrode 7, and its thickness is 8nm.Wherein in this transistor, the distance between emitter 3 and the collector electrode 7 is less than 1 micron.
Embodiment 15
With reference to figure 3d, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention, this spin transistor is on the substrate 1 that a Si semi-conducting material constitutes, and forming by thickness is the base stage 5 that the Co-Fe-B of 4nm makes; First tunnel barrier layer 4 and 6 that adopts AlN to make is formed on the base stage 5; Antiferromagnet NiO and thickness by thickness 15nm are the La of 6nm
0.7Sr
0.3MnO
3Emitter of making 3 and collector electrode 7 are formed on first tunnel barrier layer 4 and 6, and antiferromagnet NiO is formed at La
0.7Sr
0.3MnO
3On; Micro-processing technologies such as employing photoetching are controlled the relative size in emitter 3 and collector electrode 7 interfaces.The thickness of an employing Au material is that the conductive protection electrode layer 8 of 6nm is arranged on emitter 3, base stage 5 and the collector electrode 7, and its thickness is 8nm.
Embodiment 16
With reference to figure 3d, prepare the spin transistor of a bibarrier tunnel junction resonance tunneling effect of the present invention, this spin transistor is on the substrate 1 that an InAs semi-conducting material constitutes, and forming by thickness is the base stage 5 that the Co-Fe-B of 4nm makes; First tunnel barrier layer 4 and 6 that adopts EuS to make is formed on the base stage 5; The Mn doping HfO that is 4nm by antiferromagnet NiO and the thickness of thickness 15nm
2Emitter 3 that magnetic semiconductor is made and collector electrode 7 are formed on first tunnel barrier layer 4 and 6, and antiferromagnet CoO is formed at Mn doping HfO
2On the magnetic semiconductor material; Micro-processing technologies such as employing photoetching are controlled the relative size in emitter 3 and collector electrode 7 interfaces.The thickness of an employing Au material is that the conductive protection electrode layer 8 of 6nm is arranged on emitter 3, base stage 5 and the collector electrode 7, and its thickness is 8nm.
Though in conjunction with the accompanying drawings the present invention has been carried out sufficient description, it is noted that for the person of ordinary skill of the art various changes and modification all are possible.Therefore, except this change and modification deviate from the category of the present invention, they all should be included among the present invention.
Claims (14)
1. the transistor based on bibarrier tunnel junction resonance tunneling effect comprises: a substrate (1), emitter (3), base stage (5), collector electrode (7) and first tunnel barrier layer (4), first tunnel barrier layer (4) are arranged between emitter (3) and the base stage (5); It is characterized in that, also comprise second tunnel barrier layer (6); This second tunnel barrier layer (6) is between base stage (5) and collector electrode (7); And between emitter 3 and base stage (5) and the size of the junction area of the tunnel junction of base stage (5) and 7 formation of collector electrode be 1 square micron～10000 square microns; The thickness of described base stage (5) and the electron mean free path of this layer material can be compared; Having and only have the direction of the magnetization of a utmost point in described emitter (3), base stage (5) and the collector electrode (7) is freely.
2. by the described transistor of claim 1, it is characterized in that described substrate (1) comprises by insulating material or nonisulated material, or semi-conducting material is made based on bibarrier tunnel junction resonance tunneling effect; The thickness of its substrate (1) is that 0.3mm is to 5mm; Described insulating material comprises: Al
2O
3, SiO
2And Si
3N
4Described non-insulating material comprises: Cu, or Al; Described semi-conducting material comprises: Si, Ga, GaN, GaAs, GaAlAs, InGaAs or InAs.
3. by the described transistor of claim 2 based on bibarrier tunnel junction resonance tunneling effect, it is characterized in that, when substrate (1) is non-insulating material or semi-conducting material, also be included in an insulation material layer (2) is set on the substrate, the thickness of this insulation material layer (2) is: 10～500nm; Described insulation material layer (2) comprising: Al
2O
3Or Si
3N
4Its thickness is: 50～500nm.
4. by claim 1 or 3 described transistors based on bibarrier tunnel junction resonance tunneling effect; it is characterized in that; also comprise a conductive protecting layer (8); this conductive protecting layer (8) is arranged on emitter (3), base stage (5) and the collector electrode (7); this conductive protecting layer (8) comprising: gold, platinum, silver, aluminium, tantalum or anti-oxidation metal electric conducting material are made, and its thickness is: 0.5～10nm.
5. by claim 1,3 or 4 described transistors based on bibarrier tunnel junction resonance tunneling effect, it is characterized in that described emitter (3), base stage (5) or collector electrode (7) comprising: make of ferrimagnet, semimetal magnetic material, magnetic semiconductor material, organo-metallic material, semi-conducting material, nonmagnetic material; Described emitter (3) also comprises Nb metal and YBa
2Cu
3O
7Superconductor is made, and its emitter (3), base stage (5) or collector electrode (7) thickness are: 2nm～20nm.
6. by the described transistor of claim 5, it is characterized in that described ferrimagnet comprises: the 3d transition group magnetic metal of Fe, Co, Ni based on bibarrier tunnel junction resonance tunneling effect; Sm, Gd or Nd rare earth metal; Co-Fe, Co-Fe-B, Ni-Fe or Gd-Y ferromagnetic alloy.
7. by the described transistor of claim 5, it is characterized in that described semimetal magnetic material comprises: Fe based on bibarrier tunnel junction resonance tunneling effect
3O
4, CrO
2, La
0.7Sr
0.3MnO
3Or Co
2The Heussler alloy of MnSi.
8. by the described transistor of claim 5, it is characterized in that described magnetic semiconductor material comprises: ZnO, TiO that Fe, Co, Ni, V, Mn mix based on bibarrier tunnel junction resonance tunneling effect
2, HfO
2Or SnO
2, also comprise: GaAs, InAs, GaN or ZnTe that Mn mixes.
9. by the described transistor of claim 5, it is characterized in that described organo-metallic material comprises two metallocene macromolecule organo-metallic material or manganese stearates based on bibarrier tunnel junction resonance tunneling effect.
10. by the described transistor of claim 5, it is characterized in that described nonmagnetic substance comprises: Au, Ag, Pt, Cu, Ru, Al, Cr or and alloy based on bibarrier tunnel junction resonance tunneling effect.
11., it is characterized in that described semiconductor comprises: Si, Ga, GaN, GaAs, GaAlAs, InGaAs or InAs by the described transistor of claim 5 based on bibarrier tunnel junction resonance tunneling effect.
12. by claim 1 or 4 described transistors based on bibarrier tunnel junction resonance tunneling effect, it is characterized in that, described first tunnel barrier layer (4) and second tunnel barrier layer (6) are made by insulating material, and this insulating material comprises metal oxide dielectric film, metal nitride dielectric film, organic or inorganic insulated with material film, diamond like carbon film or EuS; The thickness of first tunnel barrier layer is: 0.5～3.0nm; The thickness of second tunnel barrier layer is: 0.5～4.0nm; Wherein the thickness of two tunnel barrier layers can be identical or inequality with material.
13. by the described transistor of claim 12 based on bibarrier tunnel junction resonance tunneling effect, it is characterized in that the metal of described metal oxide dielectric film and metal nitride dielectric film is selected from the metallic element of Al, Ta, Zr, Zn, Sn, Nb, Ga or Mg.
14. by the described transistor of claim 6 based on bibarrier tunnel junction resonance tunneling effect, it is characterized in that, the direction of the described ferromagnetic magnetization can be by the antiferromagnetic layer pinning, this antiferromagnetic layer is made by the alloy material of Ir, Fe, Rh, Pt or Pd and Mn, or the antiferromagnetic materials of CoO, NiO or PtCr constitute.
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| CN200410080016.4 | 2004-09-24 | ||
| CNA2004100800164A CN1606170A (en) | 2004-09-24 | 2004-09-24 | Transistor based on double barrier tunnel junction resonant tunneling effect |
| CNB2005100643416A CN100379018C (en) | 2004-09-24 | 2005-04-14 | Transistor based on bibarrier tunnel junction resonance tunneling effect |
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| CN100379018C CN100379018C (en) | 2008-04-02 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104682014A (en) * | 2015-02-17 | 2015-06-03 | 天津大学 | Cylindrical lens matrix terahertz wave source with novel material structure |
| CN108352446A (en) * | 2015-11-03 | 2018-07-31 | 于利希研究中心有限责任公司 | Magnetic channel diode and magnetic channel transistor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH516874A (en) * | 1970-05-26 | 1971-12-15 | Bbc Brown Boveri & Cie | Semiconductor component |
| JPS60117691A (en) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | Super conductive device |
| JP3119207B2 (en) * | 1997-08-08 | 2000-12-18 | 日本電気株式会社 | Resonant tunnel transistor and method of manufacturing the same |
| FR2791814A1 (en) * | 1999-03-31 | 2000-10-06 | Univ Pasteur | MICROELECTRONIC DEVICE WITH TUNNEL JUNCTIONS AND MEMORY NETWORK AND SENSOR INCLUDING SUCH DEVICES |
| JP3477638B2 (en) * | 1999-07-09 | 2003-12-10 | 科学技術振興事業団 | Ferromagnetic double quantum well tunnel magnetoresistive device |
| US6593608B1 (en) * | 2002-03-15 | 2003-07-15 | Hewlett-Packard Development Company, L.P. | Magneto resistive storage device having double tunnel junction |
-
2005
- 2005-04-14 CN CNB2005100643416A patent/CN100379018C/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104682014A (en) * | 2015-02-17 | 2015-06-03 | 天津大学 | Cylindrical lens matrix terahertz wave source with novel material structure |
| CN104682014B (en) * | 2015-02-17 | 2017-12-19 | 天津大学 | A kind of cylindrical lens matrix Terahertz wave source with new material structure |
| CN108352446A (en) * | 2015-11-03 | 2018-07-31 | 于利希研究中心有限责任公司 | Magnetic channel diode and magnetic channel transistor |
| CN108352446B (en) * | 2015-11-03 | 2021-08-24 | 于利希研究中心有限责任公司 | Magnetic tunnel diode and magnetic tunnel transistor |
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