CN104682014B - A kind of cylindrical lens matrix Terahertz wave source with new material structure - Google Patents
A kind of cylindrical lens matrix Terahertz wave source with new material structure Download PDFInfo
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- CN104682014B CN104682014B CN201510084617.0A CN201510084617A CN104682014B CN 104682014 B CN104682014 B CN 104682014B CN 201510084617 A CN201510084617 A CN 201510084617A CN 104682014 B CN104682014 B CN 104682014B
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Abstract
A kind of cylindrical lens matrix Terahertz wave source with new material structure, the RTO matrixes being made up of multiple RTO transmitter units is provided with the lower surface of cylindrical lens, RTO matrixes are located at the circle centre position of cylindrical lens lower surface.RTO matrixes are the matrixes being made up of 2 × 2~32 × 32 RTO transmitter units.The width that the present invention forms waveguide is different from the width of oscillator, and standing wave is formed between oscillator and waveguide.RTD is located at and is connected by heat sink with the Top electrode of oscillator, while can be by changing the positions of RTD in an oscillator, to realize vibration of the oscillator in different frequency range.Waveguide is lost minimum due to transmitting frequency electromagnetic waves, and THz wave finally entered slot antenna after waveguide or rectangular microband paste antenna is launched, the horizontally or vertically communication being so achieved that between chip.Under current process conditions, without increasing technology difficulty, you can RTO power is improved into more than ten times to tens times.
Description
Technical field
The present invention relates to a kind of Terahertz wave source.More particularly to a kind of cylindrical lens square with new material structure
Battle array Terahertz wave source.
Background technology
Due to 0.3-10 THz waves can be very strong penetrate as plastics, paper, timber, human body, a kind of material such as air,
Therefore it can be widely applied to the fields such as security scanning, radio astronomy, biological sensing, production monitoring, and specific classification can wrap
Include mail scanning, stationery production, plastics welding detection, ancient painting analysis, human lenses, food quality detection, cutaneum carcinoma classification etc..
Realize that above technology must provide power larger Terahertz wave source or Terahertz generator, while to be equipped with economical and high-quality
The THz wave detector and imaging device of amount include Terahertz camera.
Because THz wave is in far infrared band, its thermal effect is very strong, therefore its detector can be basically divided into two classes, a kind of
Belong to and utilize detector made of its fuel factor, such as thermal power meter (bolometer), pyroelectric detector (pyroelectric
Detector) etc.；Another kind of is the detector using its light wave property, such as photodetector (photo-conductive
) and Schottky diode (SBD) etc. detector.And the premise of these detectors application is that have a powerful THz wave
Serve as light source in source.
Single tube Terahertz wave source is because structure limits, power limited, and wants to improve the work(of the Terahertz wave source of single tube
Requirement of the rate to design and processes is all very high, is extremely difficult to current process conditions.
The content of the invention
The technical problem to be solved by the invention is to provide a kind of cylinder with new material structure easy to make
Lens matrix Terahertz wave source.
The technical solution adopted in the present invention is：A kind of cylindrical lens matrix THz wave with new material structure
Source, includes cylindrical lens, and the lower surface of described cylindrical lens is provided with the RTO being made up of multiple RTO transmitter units
Matrix, described RTO matrixes are located at the circle centre position of cylindrical lens lower surface.
Described RTO matrixes are the matrixes being made up of 2 × 2~32 × 32 RTO transmitter units.
Described RTO transmitter units include the RTD devices of the double traps of ultra-narrow, the collection of the RTD devices of the double traps of described ultra-narrow
The first micro-strip paster antenna, the launch site metal electrode of the RTD devices of the double traps of described ultra-narrow are connected with electric area's metal electrode
On be connected with the second micro-strip paster antenna, the upper surface of the first described micro-strip paster antenna and the second micro-strip paster antenna is located at
In same level, the RTD devices of the double traps of described ultra-narrow respectively the space between the first described micro-strip paster antenna with
And the space between the second micro-strip paster antenna is filled with silicon dioxide passivation layer, the RTD devices of the double traps of described ultra-narrow
Include the substrate sequentially formed from the bottom to top, cushion and launch site contact electrode layer, on the launch site contact electrode layer
Be respectively formed with launch site and launch site metal electrode, be sequentially formed with from the bottom to top on the launch site launch site separation layer,
First potential barrier, the first potential well, sub- potential well, the second potential well, the second potential barrier, collecting zone separation layer, collecting zone, the contact of current collection region electrode
Layer and collecting zone metal electrode.
Described substrate is semi-insulating InP substrate, and thickness is 100-300 μm, and described cushion is by In0.53Ga0.47As
Layer is formed, thickness 200nm.
Described launch site contact electrode layer, launch site, collecting zone and collecting zone contact electrode layer is reached by mixing Si concentration
To 2*1019cm-3In0.53Ga0.47As layers are formed, and wherein the thickness of launch site contact electrode layer is 400nm, and the thickness of launch site is
20nm, the thickness of collecting zone is 15nm, and the thickness of collecting zone contact electrode layer is 8nm.
Described launch site separation layer thickness is 2nm.
Described the first potential barrier and the second potential barrier is made up of AlAs layers, thickness 1.2nm.
Described the first potential well, the second potential well and collecting zone separation layer is by In0.53Ga0.47As layers are formed, wherein, first
The thickness of potential well and the second potential well is 1.2nm, and the thickness of collecting zone separation layer is 2nm.
Described sub- potential well is made up of InAs layers, thickness 1.2nm.
Described collecting zone metal electrode and launch site metal electrode material is metal, and thickness is 100-300nm.
A kind of cylindrical lens matrix Terahertz wave source with new material structure of the present invention, form the width of waveguide
It is different from the width of oscillator, standing wave is formed between oscillator and waveguide.RTD is located at by heat sink and oscillator Top electrode
It is connected, while can be by changing the positions of RTD in an oscillator, to realize vibration of the oscillator in different frequency range.Waveguide by
In transmission frequency electromagnetic waves, and be lost it is minimum, THz wave finally entered after waveguide slot antenna or rectangular microstrip patch
Chip antenna is launched, the horizontally or vertically communication being so achieved that between chip.Under current process conditions, without increasing
Add technology difficulty, you can RTO power is improved more than ten times to tens times.
Brief description of the drawings
Fig. 1 is the overall structure diagram of the present invention；
Fig. 2 is Fig. 1 top view；
Fig. 3 is Fig. 1 section structure diagram；
Fig. 4 is the structural representation of cylindrical lens in the present invention；
Fig. 5 is the top view of RTO transmitter units in the present invention；
Fig. 6 is the section structure diagram of RTO transmitter units；
Fig. 7 is the section structure diagram of the RTD devices of the double traps of ultra-narrow in the present invention；
Fig. 8 is the top view of the RTD devices of the double traps of ultra-narrow in the present invention.
Embodiment
With reference to embodiment and accompanying drawing to a kind of cylindrical lens matrix with new material structure of the present invention too
Hertz wave source is described in detail.
As shown in Figure 1, Figure 2, Figure 3, Figure 4, a kind of cylindrical lens matrix with new material structure of the invention is too
Hertz wave source, the lower surface for including cylindrical lens A, described cylindrical lens A is provided with by multiple RTO transmitter units structures
Into RTO matrix Bs, described RTO matrix Bs are located at the circle centre position of cylindrical lens A lower surfaces.Described RTO matrix Bs are by 2
The matrix that × 2~32 × 32 RTO transmitter units are formed.
A kind of cylindrical lens matrix Terahertz wave source with new material structure of the present invention, by multiple single tube RTO
Form large area monolithic die (areal extent is from 100 μm of 100 μ m to 2mm × 2mm), then by optical lens (silicon,
Polymer or ceramics) and metallic mirror multiple transmitter units are focused on, improve total transmission power, this total THz wave
It is multi-frequency or the synthesis frequency spectrum of out of phase transmitter unit radiation.
As shown in Figure 5, Figure 6, described RTO transmitter units include the RTD devices 1 of the double traps of ultra-narrow, and described ultra-narrow is double
The first micro-strip paster antenna 2, the RTD devices of the double traps of described ultra-narrow are connected with the collecting zone metal electrode of the RTD devices 1 of trap
The second micro-strip paster antenna 3, the first described micro-strip paster antenna 2 and the second micro-strip are connected with 1 launch site metal electrode
The upper surface of paster antenna 3 is located in same level, and the RTD devices 1 of the double traps of described ultra-narrow are micro- with described first respectively
Space with the space between paster antenna 2 and between the second micro-strip paster antenna 3 is filled with silicon dioxide passivation layer
4。
Described the first micro-strip paster antenna 2 and the second micro-strip paster antenna 3 can select rectangular microband paste antenna,
Bow tie micro-strip paster antenna, it can also be tapered slot antenna or imbalance feeding slot antenna etc..
As shown in Figure 7, Figure 8, the RTD devices 1 of the double traps of described ultra-narrow include sequentially form from the bottom to top substrate 11,
Cushion 12 and launch site contact electrode layer 13, launch site 14 and transmitting are respectively formed with the launch site contact electrode layer 13
Area's metal electrode 115, launch site separation layer 15, the first potential barrier 16, first are sequentially formed with from the bottom to top on the launch site 14
Potential well 17, sub- potential well 18, the second potential well 19, the second potential barrier 110, collecting zone separation layer 111, collecting zone 112, current collection region electrode connect
Contact layer 113 and collecting zone metal electrode 114.Wherein, the substrate 11 stated is semi-insulating InP substrate, and thickness is 100-300 μm, institute
The cushion 12 stated is by In0.53Ga0.47As layers are formed, thickness 200nm；Described launch site contact electrode layer 13, launch site
14th, collecting zone 112 and collecting zone contact electrode layer 113 are to reach 2*10 by mixing Si concentration19cm-3In0.53Ga0.47As layers are formed,
Wherein the thickness of launch site contact electrode layer 13 is 400nm, and the thickness of launch site 14 is 20nm, and the thickness of collecting zone 112 is
15nm, the thickness of collecting zone contact electrode layer 113 is 8nm；The described thickness of launch site separation layer 15 is 2nm；Described first
The potential barrier 110 of potential barrier 16 and second is made up of AlAs layers, thickness 1.2nm；Described the first potential well 17, the second potential well 19 and collection
It is by In that electricity, which separates absciss layer 111,0.53Ga0.47As layers are formed, wherein, the thickness of the first potential well 17 and the second potential well 19 is 1.2nm,
The thickness of collecting zone separation layer 111 is 2nm；Described sub- potential well 18 is made up of InAs layers, thickness 1.2nm；Described collection
Electric area's metal electrode 114 and launch site metal electrode 115 material is metal, and such as gold or platinum or aluminium, thickness are 100-300nm.
A kind of cylindrical lens matrix Terahertz wave source with new material structure of the present invention, pasted with RTD and micro-strip
Exemplified by the RTO of chip antenna composition, multiple RTO transmitter units are designed to integrated array, consider that the lead that bias voltage is drawn connects
Contact configuration optimization etc., can first do from 2 × 2 arrays, develop into the chip of 32 × 32 arrays.
Using optics of lens synthesis system, optics synthesis is carried out to transmitter unit array chip to improve total transmitting work(
Rate.Optical lens material includes silicon, polymer or ceramics etc..Due to silicon and ceramics hardness it is larger, so difficulty of processing and into
This is all bigger than polymer, but polymer is stronger to the absorption of THz wave, can thus make the THz wave launched
Reduce, be unfavorable for THz wave to external radiation.
Cylindrical lens can realize convergence THz wave, make the directionality of radiation preferable, it is possible to achieve perpendicular to chip
Plane Vertical Launch THz wave.Cylindrical lens can realize two secondary reflections to THz wave, make the directionality of radiation compared with
It is good, it is possible to achieve perpendicular to chip plane Vertical Launch THz wave.RTO matrixes are produced in InP substrate, form chip.Thoroughly
Mirror makes on chip array (on focal plane) each transmitter unit can be in lens focus into clearly as rather than only to saturating
The transmitter unit of mirror axis after array chip into clearly as adding metallic mirror to reduce Terahertz rearwardly if necessary
Ripple transmitting loss.
Claims (1)
1. a kind of cylindrical lens matrix Terahertz wave source, includes cylindrical lens（A）, it is characterised in that described cylinder
Shape lens（A）Lower surface be provided with the RTO matrixes being made up of multiple RTO transmitter units（B）, described RTO matrixes（B）It is located at
Cylindrical lens（A）The circle centre position of lower surface, described RTO matrixes（B）It is to be made up of 2 × 2~32 × 32 RTO transmitter units
Matrix, described RTO transmitter units include the RTD devices of the double traps of ultra-narrow（1）, the RTD devices of the double traps of described ultra-narrow（1）
Collecting zone metal electrode on be connected with the first micro-strip paster antenna（2）, the RTD devices of the double traps of described ultra-narrow（1）Transmitting
The second micro-strip paster antenna is connected with area's metal electrode（3）, described the first micro-strip paster antenna（2）With the second microband paste
Antenna（3）Upper surface be located in same level, the RTD devices of the double traps of described ultra-narrow（1）It is micro- with described first respectively
Band paster antenna（2）Between space and with the second micro-strip paster antenna（3）Between space filled with silica it is blunt
Change layer（4）, the RTD devices of the double traps of described ultra-narrow（1）Include the substrate sequentially formed from the bottom to top（11）, cushion（12）
With launch site contact electrode layer（13）, the launch site contact electrode layer（13）On be respectively formed with launch site（14）And launch site
Metal electrode（115）, the launch site（14）On be sequentially formed with launch site separation layer from the bottom to top（15）, the first potential barrier
（16）, the first potential well（17）, sub- potential well（18）, the second potential well（19）, the second potential barrier（110）, collecting zone separation layer（111）, collection
Electric area（112）, collecting zone contact electrode layer（113）With collecting zone metal electrode（114）, wherein,
Described substrate（11）For semi-insulating InP substrate, thickness is 100-300 μm, described cushion（12）By
In0.53Ga0.47As layers are formed, thickness 200nm；
Described launch site contact electrode layer（13）, launch site（14）, collecting zone（112）With collecting zone contact electrode layer（113）
It is to reach 2*10 by mixing Si concentration19cm-3In0.53Ga0.47As layers are formed, wherein launch site contact electrode layer（13）Thickness
For 400nm, launch site（14）Thickness be 20nm, collecting zone（112）Thickness be 15nm, collecting zone contact electrode layer（113）
Thickness be 8nm；
Described launch site separation layer（15）Thickness is 2nm；
The first described potential barrier（16）With the second potential barrier（110）It is to be made up of AlAs layers, thickness 1.2nm；
The first described potential well（17）, the second potential well（19）With collecting zone separation layer（111）It is by In0.53Ga0.47As layers are formed,
Wherein, the first potential well（17）With the second potential well（19）Thickness be 1.2nm, collecting zone separation layer（111）Thickness be 2nm；
Described sub- potential well（18）It is to be made up of InAs layers, thickness 1.2nm；
Described collecting zone metal electrode（114）With launch site metal electrode（115）Material is metal, and thickness is 100-
300nm。
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| CN201510084617.0A CN104682014B (en) | 2015-02-17 | 2015-02-17 | A kind of cylindrical lens matrix Terahertz wave source with new material structure |
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| CN201510084617.0A CN104682014B (en) | 2015-02-17 | 2015-02-17 | A kind of cylindrical lens matrix Terahertz wave source with new material structure |
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| CN104682014B true CN104682014B (en) | 2017-12-19 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6448161B1 (en) * | 2000-06-09 | 2002-09-10 | Advanced Micro Devices, Inc. | Silicon based vertical tunneling memory cell |
| CN1753187A (en) * | 2004-09-24 | 2006-03-29 | 中国科学院物理研究所 | Transistor based on bibarrier tunnel junction resonance tunneling effect |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103560327A (en) * | 2013-11-11 | 2014-02-05 | 天津工业大学 | Detuning feed slot antenna based on resonance tunneling mechanism |
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2015
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6448161B1 (en) * | 2000-06-09 | 2002-09-10 | Advanced Micro Devices, Inc. | Silicon based vertical tunneling memory cell |
| CN1753187A (en) * | 2004-09-24 | 2006-03-29 | 中国科学院物理研究所 | Transistor based on bibarrier tunnel junction resonance tunneling effect |
Non-Patent Citations (2)
| Title |
|---|
| Monolithic Schottky-Collector Resonant Tunnel Diode Oscillator Arrays to 650 GHz;M.Reddy et al;《IEEE ELECTRON DEVICE LETTERS》;19970531;第18卷(第5期);218-221 * |
| 利用共振隧穿器件制作太赫兹波源;郭维廉等;《微纳电子技术》;20101031;第47卷(第10期);595-602 * |
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