CN104681638A - Hemispheric lens matrix terahertz wave source with novel material structure - Google Patents
Hemispheric lens matrix terahertz wave source with novel material structure Download PDFInfo
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- CN104681638A CN104681638A CN201510084618.5A CN201510084618A CN104681638A CN 104681638 A CN104681638 A CN 104681638A CN 201510084618 A CN201510084618 A CN 201510084618A CN 104681638 A CN104681638 A CN 104681638A
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- rto
- material structure
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- 239000011159 matrix material Substances 0.000 title claims abstract description 40
- 239000000463 material Substances 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000005036 potential barrier Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 7
- 230000010355 oscillation Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 201000009030 Carcinoma Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000004023 plastic welding Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
- H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
Abstract
The invention discloses a hemispheric lens matrix terahertz wave source with a novel material structure. An RTO matrix consisting of a plurality of RTO emitting units is arranged on the lower surface of a hemispheric lens and is positioned in the center of the lower surface of the hemispheric lens. The RTO matrix is a matrix consisting of 2*2-32*32 RTO emitting units. The width of a waveguide formed by the hemispheric lens matrix terahertz wave source with the novel material structure is different from that of an oscillator, and therefore a standing wave is formed between the oscillator and the waveguide. An RTD is connected with an upper electrode of the oscillator through a heat sink, and meanwhile, by changing the position of the RTD in the oscillator, oscillation of the oscillator in different frequency bands can be achieved. Due to the fact that the waveguide transmits a high-frequency electromagnetic wave and the loss is extremely low, a terahertz wave passes through the waveguide, then enters a slot antenna or a rectangular micro-strip patch antenna and is emitted finally, so that horizontal or vertical communication between chips is achieved. Under the current process conditions, the process difficulty does not need to be increased, and the power of RTO can be improved by more than ten times to few ten times.
Description
Technical field
The present invention relates to a kind of hemispherical lens matrix Terahertz wave source.Particularly relate to and a kind ofly form by multiple single tube Terahertz wave source with new material structure the hemispherical lens matrix Terahertz wave source with new material structure that matrix and copline lens form.
Background technology
Due to 0.3-10 THz wave can be very strong penetrate a class material such as picture plastics, paper, timber, human body, air etc., therefore it can be widely used in the fields such as security scanning, radio astronomy, biological remote sensing, production monitoring, and concrete classification can comprise mail scanning, stationery production, Plastic Welding detection, ancient painting analysis, human lens, food quality detection, cutaneum carcinoma classification etc.Realize Terahertz wave source that above technology must provide power larger or Terahertz generator, will be equipped with economical and high-quality THz wave detector and imaging device comprise Terahertz camera simultaneously.
Because THz wave is in far infrared band, its thermal effect is very strong, therefore its detector can be divided into two classes substantially, a class belongs to the detector utilizing its thermal effect to make, as thermal power meter (bolometer), pyroelectric detector (pyroelectric detector) etc.; Another kind of is the detector utilizing its light wave character, as photodetector (photo-conductive detector) and Schottky diode (SBD) etc.And the prerequisite of these detectors application has a powerful Terahertz wave source to serve as light source.
Single tube Terahertz wave source is due to structural limitations, and power limited, and want the power of Terahertz wave source improving single tube all very high to the requirement of design and processes, is difficult to reach with current process conditions.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of under current process conditions, without the need to increasing technology difficulty, the power of RTO can be improved the hemispherical lens matrix Terahertz wave source with new material structure of tens times to tens times.
The technical solution adopted in the present invention is: a kind of hemispherical lens matrix Terahertz wave source with new material structure, include hemispherical lens, the lower surface of described hemispherical lens is provided with the RTO matrix be made up of multiple RTO transmitter unit, and described RTO matrix is positioned at the circle centre position of hemispherical lens lower surface.
Described RTO matrix is the matrix be made up of 2 × 2 ~ 32 × 32 RTO transmitter units.
Described RTO transmitter unit includes the RTD device of the two trap of ultra-narrow, the collector region metal electrode of the RTD device of the two trap of described ultra-narrow is connected with the first micro-strip paster antenna, the emitter region metal electrode of the RTD device of the two trap of described ultra-narrow is connected with the second micro-strip paster antenna, the first described micro-strip paster antenna and the upper surface of the second micro-strip paster antenna are positioned in same level, space respectively and between the first described micro-strip paster antenna of the RTD device of the two trap of described ultra-narrow and and the second micro-strip paster antenna between space be all filled with silicon dioxide passivation layer, the RTD device of the two trap of described ultra-narrow includes the substrate formed successively from the bottom to top, resilient coating and emitter region contact electrode layer, described emitter region contact electrode layer is formed with respectively emitter region and emitter region metal electrode, described emitter region is formed with emitter region separator from the bottom to top successively, first potential barrier, first potential well, sub-potential well, second potential well, second potential barrier, collector region separator, collector region, collector region contact electrode layer and collector region metal electrode.
Described substrate is semi-insulating InP substrate, and thickness is 100-300 μm, and described resilient coating is by In
0.53ga
0.47as layer is formed, and thickness is 200nm.
Described emitter region contact electrode layer, emitter region, collector region and collector region contact electrode layer reach 2*10 by mixing Si concentration
19cm
-3in
0.53ga
0.47as layer is formed, and wherein the thickness of emitter region contact electrode layer is 400nm, and the thickness of emitter region is 20nm, and the thickness of collector region is 15nm, and the thickness of collector region contact electrode layer is 8nm.
Described emitter region separation layer thickness is 2nm.
The first described potential barrier and the second potential barrier are made up of AlAs layer, and thickness is 1.2nm.
The first described potential well, the second potential well and collector region separator are by In
0.53ga
0.47as layer is formed, and wherein, the thickness of the first potential well and the second potential well is 1.2nm, and the thickness of collector region separator is 2nm.
Described sub-potential well is made up of InAs layer, and thickness is 1.2nm.
Described collector region metal electrode and emitter region metal electrode material are metal, and thickness is 100-300nm.
A kind of hemispherical lens matrix Terahertz wave source with new material structure of the present invention, single tube RTO is made up of resonance tunnel-through diode RTD and micro-strip paster antenna two parts, or is made up of RTD, waveguide and tapered slot antenna or imbalance feeding slot antenna three part.The width of waveguide is different from the width of oscillator, so just between oscillator and waveguide, forms standing wave.RTD is positioned at and is connected with the top electrode of oscillator by heat sink, by changing RTD position in an oscillator, can realize the vibration of oscillator at different frequency range simultaneously.Waveguide is due to carry high frequency electromagnetic wave, and loss is minimum, and THz wave finally entered slot antenna after waveguide or micro-strip paster antenna is launched, and so just achieves the level between chip or vertically communicates.Under current process conditions, without the need to increasing technology difficulty, the power of RTO can be improved tens times to tens times.
Accompanying drawing explanation
Fig. 1 is perspective view of the present invention;
Fig. 2 is the Facad structure schematic diagram of Fig. 1;
Fig. 3 is the vertical view of RTO transmitter unit;
Fig. 4 is the section structure schematic diagram of RTO transmitter unit;
Fig. 5 is the section structure schematic diagram of the RTD device of the two trap of ultra-narrow in the present invention;
Fig. 6 is the vertical view of the RTD device of the two trap of ultra-narrow in the present invention.
In figure
A: hemispherical lens B:RTO matrix
1: RTD device 2: the first rectangular microband paste antenna of the two trap of ultra-narrow
3: the second rectangular microband paste antennas 4: silicon dioxide passivation layer
11: substrate 12: resilient coating
13: emitter region contact electrode layer 14: emitter region
15: emitter region separator 16: the first potential barrier
17: the first potential wells 18: sub-potential well
19: the second potential well 110: the second potential barriers
111: collector region separator 112: collector region
113: collector region contact electrode layer 114: collector region metal electrode
115: emitter region metal electrode
Embodiment
Below in conjunction with embodiment and accompanying drawing, a kind of hemispherical lens matrix Terahertz wave source with new material structure of the present invention is described in detail.
As shown in Figure 1 and Figure 2, a kind of hemispherical lens matrix Terahertz wave source with new material structure of the present invention, include hemispherical lens A, the lower surface of described hemispherical lens A is provided with the RTO matrix B be made up of multiple RTO transmitter unit, be designed to integrated array by multiple RTO transmitter unit, described RTO matrix B is positioned at the circle centre position of hemispherical lens A lower surface.Consider the wire bond pads layout optimization etc. that bias voltage is drawn, described RTO matrix B is the matrix be made up of 2 × 2 ~ 32 × 32 RTO transmitter units.
As Fig. 3, shown in Fig. 4, described RTO transmitter unit includes the RTD device 1 of the two trap of ultra-narrow, the collector region metal electrode of the RTD device 1 of the two trap of described ultra-narrow is connected with the first micro-strip paster antenna 2, the emitter region metal electrode of the RTD device 1 of the two trap of described ultra-narrow is connected with the second micro-strip paster antenna 3, the first described micro-strip paster antenna 2 and the upper surface of the second micro-strip paster antenna 3 are positioned in same level, space respectively and between the first described micro-strip paster antenna 2 of the RTD device 1 of the two trap of described ultra-narrow and and the second micro-strip paster antenna 3 between space be all filled with silicon dioxide passivation layer 4.
The first described micro-strip paster antenna 2 and the second micro-strip paster antenna 3 all can select rectangular microband paste antenna, bow tie micro-strip paster antenna, can also be tapered slot antenna or imbalance feeding slot antenna etc.
As shown in Figure 5, Figure 6, the RTD device 1 of the two trap of described ultra-narrow includes the substrate 11, resilient coating 12 and the emitter region contact electrode layer 13 that are formed successively from the bottom to top, described emitter region contact electrode layer 13 is formed with respectively emitter region 14 and emitter region metal electrode 115, described emitter region 14 is formed with from the bottom to top successively emitter region separator 15, first potential barrier 16, first potential well 17, sub-potential well 18, second potential well 19, second potential barrier 110, collector region separator 111, collector region 112, collector region contact electrode layer 113 and collector region metal electrode 114.Wherein, described substrate 11 is semi-insulating InP substrate, and thickness is 100-300 μm, and described resilient coating 12 is by In
0.53ga
0.47as layer is formed, and thickness is 200nm; Described emitter region contact electrode layer 13, emitter region 14, collector region 112 and collector region contact electrode layer 113 reach 2*10 by mixing Si concentration
19cm
-3in
0.53ga
0.47as layer is formed, and wherein the thickness of emitter region contact electrode layer 13 is 400nm, and the thickness of emitter region 14 is 20nm, and the thickness of collector region 112 is 15nm, and the thickness of collector region contact electrode layer 113 is 8nm; Described emitter region separator 15 thickness is 2nm; The first described potential barrier 16 and the second potential barrier 110 are made up of AlAs layer, and thickness is 1.2nm; The first described potential well 17, second potential well 19 and collector region separator 111 are by In
0.53ga
0.47as layer is formed, and wherein, the thickness of the first potential well 17 and the second potential well 19 is 1.2nm, and the thickness of collector region separator 111 is 2nm; Described sub-potential well 18 is made up of InAs layer, and thickness is 1.2nm; Described collector region metal electrode 114 and emitter region metal electrode 115 material are metal, and as gold or platinum or aluminium, thickness is 100-300nm.
A kind of hemispherical lens matrix Terahertz wave source with new material structure of the present invention, utilizes optics of lens synthesis system, carries out optics synthesis to improve total transmitting power to transmitter unit array chip.Optical lens material comprises silicon, polymer or pottery etc.Because the hardness of silicon and pottery is comparatively large, so difficulty of processing and cost are all large than polymer, but polymer is comparatively strong to the absorption of THz wave, and the THz wave of launching will be made like this to reduce, be unfavorable for THz wave to external radiation.
RTO matrix is produced in InP substrate by special process, forms chip.Lens make (on focal plane) each transmitter unit on chip array can become in lens focus clearly as, instead of only to the transmitter unit of lens axis become clearly as, after array chip, add metallic mirror if desired launch loss with the THz wave reduced rearwardly.
Claims (10)
1. one kind has the hemispherical lens matrix Terahertz wave source of new material structure, include hemispherical lens (A), it is characterized in that, the lower surface of described hemispherical lens (A) is provided with the RTO matrix (B) be made up of multiple RTO transmitter unit, and described RTO matrix (B) is positioned at the circle centre position of hemispherical lens (A) lower surface.
2. a kind of hemispherical lens matrix Terahertz wave source with new material structure according to claim 1, it is characterized in that, described RTO matrix (B) is the matrix be made up of 2 × 2 ~ 32 × 32 RTO transmitter units.
3. a kind of hemispherical lens matrix Terahertz wave source with new material structure according to claim 1 and 2, it is characterized in that, described RTO transmitter unit includes the RTD device (1) of the two trap of ultra-narrow, the collector region metal electrode of the RTD device (1) of the two trap of described ultra-narrow is connected with the first micro-strip paster antenna (2), the emitter region metal electrode of the RTD device (1) of the two trap of described ultra-narrow is connected with the second micro-strip paster antenna (3), described the first micro-strip paster antenna (2) and the upper surface of the second micro-strip paster antenna (3) are positioned in same level, space respectively and between described the first micro-strip paster antenna (2) of the RTD device (1) of the two trap of described ultra-narrow and and the second micro-strip paster antenna (3) between space be all filled with silicon dioxide passivation layer (4), the RTD device (1) of the two trap of described ultra-narrow includes the substrate (11) formed successively from the bottom to top, resilient coating (12) and emitter region contact electrode layer (13), described emitter region contact electrode layer (13) is formed with respectively emitter region (14) and emitter region metal electrode (115), described emitter region (14) is formed with emitter region separator (15) from the bottom to top successively, first potential barrier (16), first potential well (17), sub-potential well (18), second potential well (19), second potential barrier (110), collector region separator (111), collector region (112), collector region contact electrode layer (113) and collector region metal electrode (114).
4. a kind of hemispherical lens matrix Terahertz wave source with new material structure according to claim 3, it is characterized in that, described substrate (11) is semi-insulating InP substrate, and thickness is 100-300 μm, and described resilient coating (12) is by In
0.53ga
0.47as layer is formed, and thickness is 200nm.
5. a kind of hemispherical lens matrix Terahertz wave source with new material structure according to claim 3, it is characterized in that, described emitter region contact electrode layer (13), emitter region (14), collector region (112) and collector region contact electrode layer (113) reach 2*10 by mixing Si concentration
19cm
-3in
0.53ga
0.47as layer is formed, wherein the thickness of emitter region contact electrode layer (13) is 400nm, the thickness of emitter region (14) is 20nm, and the thickness of collector region (112) is 15nm, and the thickness of collector region contact electrode layer (113) is 8nm.
6. a kind of hemispherical lens matrix Terahertz wave source with new material structure according to claim 3, it is characterized in that, described emitter region separator (15) thickness is 2nm.
7. a kind of hemispherical lens matrix Terahertz wave source with new material structure according to claim 3, it is characterized in that, described the first potential barrier (16) and the second potential barrier (110) are made up of AlAs layer, and thickness is 1.2nm.
8. a kind of hemispherical lens matrix Terahertz wave source with new material structure according to claim 3, it is characterized in that, described the first potential well (17), the second potential well (19) and collector region separator (111) are by In
0.53ga
0.47as layer is formed, and wherein, the thickness of the first potential well (17) and the second potential well (19) is 1.2nm, and the thickness of collector region separator (111) is 2nm.
9. a kind of hemispherical lens matrix Terahertz wave source with new material structure according to claim 3, it is characterized in that, described sub-potential well (18) is made up of InAs layer, and thickness is 1.2nm.
10. a kind of hemispherical lens matrix Terahertz wave source with new material structure according to claim 3, it is characterized in that, described collector region metal electrode (114) and emitter region metal electrode (115) material are metal, and thickness is 100-300nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510084618.5A CN104681638A (en) | 2015-02-17 | 2015-02-17 | Hemispheric lens matrix terahertz wave source with novel material structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510084618.5A CN104681638A (en) | 2015-02-17 | 2015-02-17 | Hemispheric lens matrix terahertz wave source with novel material structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104681638A true CN104681638A (en) | 2015-06-03 |
Family
ID=53316450
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510084618.5A Pending CN104681638A (en) | 2015-02-17 | 2015-02-17 | Hemispheric lens matrix terahertz wave source with novel material structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104681638A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298978A (en) * | 2016-10-08 | 2017-01-04 | 天津大学 | Imbalance feeding slot antenna RTO Terahertz wave source and processing technology |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103560327A (en) * | 2013-11-11 | 2014-02-05 | 天津工业大学 | Detuning feed slot antenna based on resonance tunneling mechanism |
-
2015
- 2015-02-17 CN CN201510084618.5A patent/CN104681638A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103560327A (en) * | 2013-11-11 | 2014-02-05 | 天津工业大学 | Detuning feed slot antenna based on resonance tunneling mechanism |
Non-Patent Citations (2)
| Title |
|---|
| M.REDDY,ETAL: "Monolithic Schottky-Collector Resonant Tunnel Diode Oscillator Arrays to 650 GHz", 《IEEE ELECTRON DEVICE LETTERS》 * |
| 宋瑞良: "共振隧穿器件的研制及模拟研究", 《中国博士学位论文全文数据库》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298978A (en) * | 2016-10-08 | 2017-01-04 | 天津大学 | Imbalance feeding slot antenna RTO Terahertz wave source and processing technology |
| CN106298978B (en) * | 2016-10-08 | 2023-10-03 | 天津大学 | Offset feed slot antenna RTO terahertz wave source and manufacturing process |
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