CN1751421A - 具有高相对反馈的激光源及其制造方法 - Google Patents
具有高相对反馈的激光源及其制造方法 Download PDFInfo
- Publication number
- CN1751421A CN1751421A CN200480004111.4A CN200480004111A CN1751421A CN 1751421 A CN1751421 A CN 1751421A CN 200480004111 A CN200480004111 A CN 200480004111A CN 1751421 A CN1751421 A CN 1751421A
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- Prior art keywords
- laser
- light emitter
- lasing light
- fbg
- guiding device
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- 238000002310 reflectometry Methods 0.000 claims abstract description 52
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- 239000004065 semiconductor Substances 0.000 claims abstract description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
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- 229910052691 Erbium Inorganic materials 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 4
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/146—External cavity lasers using a fiber as external cavity
- H01S5/147—External cavity lasers using a fiber as external cavity having specially shaped fibre, e.g. lensed or tapered end portion
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0303271.1 | 2003-02-13 | ||
GB0303271A GB2398425B (en) | 2003-02-13 | 2003-02-13 | Laser source using very high relative feedback and method for making such a laser source |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1751421A true CN1751421A (zh) | 2006-03-22 |
CN100539333C CN100539333C (zh) | 2009-09-09 |
Family
ID=9952931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800041114A Expired - Fee Related CN100539333C (zh) | 2003-02-13 | 2004-02-09 | 具有高相对反馈的激光源及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7099361B2 (zh) |
EP (1) | EP1597803A1 (zh) |
CN (1) | CN100539333C (zh) |
GB (1) | GB2398425B (zh) |
WO (1) | WO2004073124A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111564757A (zh) * | 2020-05-26 | 2020-08-21 | 江苏师范大学 | 一种中红外光纤光栅稳频的量子级联激光器及其实现方法 |
CN113471800A (zh) * | 2021-07-01 | 2021-10-01 | 四川大学 | 基于布拉格光栅的可选横模输出激光器及激光输出方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090310634A1 (en) * | 2004-04-27 | 2009-12-17 | Oclaro | Stabilized laser source with very high relative feedback and narrow bandwidth |
GB2413697A (en) * | 2004-04-27 | 2005-11-02 | Bookham Technology Plc | Uncooled semiconductor laser |
US8199784B2 (en) * | 2007-10-15 | 2012-06-12 | Oclaro Technology Limited | Laser light source and method of operating the same |
US20100284435A1 (en) * | 2008-07-25 | 2010-11-11 | Martin Achtenhagen | Red-Shifted Optical Feedback Laser |
JP4672071B2 (ja) * | 2009-05-28 | 2011-04-20 | 株式会社フジクラ | ファイバレーザ装置 |
EP2522057B1 (en) | 2010-01-08 | 2017-03-22 | II-VI Laser Enterprise GmbH | Laser system with highly linear output |
US8715887B2 (en) * | 2010-07-30 | 2014-05-06 | Sabic Innovative Plastics Ip B.V. | Complex holograms, method of making and using complex holograms |
US9287681B2 (en) * | 2013-11-13 | 2016-03-15 | Innovative Photoic Solutions, Inc. | Wavelength stabilized diode laser |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3875422A (en) * | 1974-07-24 | 1975-04-01 | Bell Telephone Labor Inc | Four photon parametric amplification in glassy optical waveguides |
US5563732A (en) * | 1994-01-06 | 1996-10-08 | At&T Corp. | Laser pumping of erbium amplifier |
JPH1062654A (ja) * | 1996-08-15 | 1998-03-06 | Furukawa Electric Co Ltd:The | 半導体レーザモジュール |
JPH11214799A (ja) * | 1998-01-26 | 1999-08-06 | Furukawa Electric Co Ltd:The | 半導体レーザモジュール |
US6525872B1 (en) * | 1999-02-11 | 2003-02-25 | Jds Uniphase Corporation | Fiber grating-stabilized, semiconductor pump source |
JP2000353845A (ja) * | 1999-06-10 | 2000-12-19 | Sumitomo Electric Ind Ltd | 半導体レーザモジュール |
DE69928801T2 (de) * | 1999-09-21 | 2006-08-03 | Bookham Technology Plc., Towcester | Stabilisierte Laserquelle |
US6870871B2 (en) * | 2000-02-03 | 2005-03-22 | The Furukawa Electric Co., Ltd. | Semiconductor laser devices, and semiconductor laser modules and optical communication systems using the same |
JP2001284715A (ja) * | 2000-03-30 | 2001-10-12 | Ando Electric Co Ltd | 外部共振器型レーザ光源 |
US6792012B2 (en) * | 2001-04-30 | 2004-09-14 | Jds Uniphase Corporation | Laser pump module with reduced tracking error |
-
2003
- 2003-02-13 GB GB0303271A patent/GB2398425B/en not_active Expired - Fee Related
-
2004
- 2004-02-09 EP EP04709296A patent/EP1597803A1/en not_active Withdrawn
- 2004-02-09 WO PCT/IB2004/000389 patent/WO2004073124A1/en not_active Application Discontinuation
- 2004-02-09 CN CNB2004800041114A patent/CN100539333C/zh not_active Expired - Fee Related
- 2004-02-10 US US10/775,302 patent/US7099361B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111564757A (zh) * | 2020-05-26 | 2020-08-21 | 江苏师范大学 | 一种中红外光纤光栅稳频的量子级联激光器及其实现方法 |
CN113471800A (zh) * | 2021-07-01 | 2021-10-01 | 四川大学 | 基于布拉格光栅的可选横模输出激光器及激光输出方法 |
Also Published As
Publication number | Publication date |
---|---|
US7099361B2 (en) | 2006-08-29 |
GB0303271D0 (en) | 2003-03-19 |
CN100539333C (zh) | 2009-09-09 |
GB2398425B (en) | 2006-08-16 |
EP1597803A1 (en) | 2005-11-23 |
GB2398425A (en) | 2004-08-18 |
US20040170209A1 (en) | 2004-09-02 |
WO2004073124A1 (en) | 2004-08-26 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: OCLARO SWITZERLAND CO., LTD. Free format text: FORMER OWNER: OCLARO TECHNOLOGY LTD. Effective date: 20141009 |
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C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: AOLAN TECHNOLOGY COMPANY Free format text: FORMER NAME: BOOKHAM TECHNOLOGY PLC Owner name: II-VI II-VI LASER ENTERPRISE CO., LTD. Free format text: FORMER NAME: OCLARO SWITZERLAND CO., LTD. Owner name: OCLARO TECHNOLOGY LTD. Free format text: FORMER NAME: AOLAN TECHNOLOGY COMPANY |
|
CP01 | Change in the name or title of a patent holder |
Address after: Zurich Patentee after: II-VI Laser Enterprise Co.,Ltd. Address before: Zurich Patentee before: Oran Switzerland Ltd. Address after: The British county of Northampton Patentee after: OCLARO TECHNOLOGY Ltd. Address before: The British county of Northampton Patentee before: Oran Technology Co. Address after: The British county of Northampton Patentee after: Oran Technology Co. Address before: The British county of Northampton Patentee before: Bookham Technology PLC |
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TR01 | Transfer of patent right |
Effective date of registration: 20141009 Address after: Zurich Patentee after: Oran Switzerland Ltd. Address before: The British county of Northampton Patentee before: OCLARO TECHNOLOGY Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090909 Termination date: 20220209 |
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CF01 | Termination of patent right due to non-payment of annual fee |