CN1744397A - Semiconductor laser apparatus - Google Patents

Abstract

A sub-substrate, a blue-violet semiconductor laser device, an insulating layer, and a red semiconductor laser device are stacked in order on a support member through a plurality of fusion layers. The insulating layer is stacked on an n-side pad electrode of the blue-violet semiconductor laser device, and a conductive layer is formed on the insulating layer. The red semiconductor laser device is stacked on the conductive layer through a fusion layer. The conductive layer is electrically connected to a p-side pad electrode of the red semiconductor laser device. The n-side pad electrode of the blue-violet semiconductor laser device and the n-side pad electrode of the red semiconductor laser device are electrically connected to each other.

Description

Semicondcutor laser unit

Technical field

The present invention relates to a kind of semicondcutor laser unit that possesses laser diode.

Background technology

In recent years, follow the high performance of computer and multimedia equipment, obviously increase as the amount of information of process object.Be accompanied by the increase of amount of information, developed corresponding to the high speed of information processing and the optical recording medium and the drive unit thereof of high capacity.

As the object lesson of these optical recording medium, compact disk (below be called CD) and digital universal disc (below be called DVD) are arranged.As the object lesson of the drive unit of the reproduction of carrying out these optical recording medium and record, CD is arranged with semicondcutor laser unit and DVD semicondcutor laser unit.CD can irradiate with semicondcutor laser unit and carry out that CD reproduces or employed infrared laser (wavelength is about 790nm) during record, and DVD can irradiate the reproduction of carrying out DVD with semicondcutor laser unit or employed red laser (wavelength is about 658nm) when writing down.

In the following description, the semiconductor Laser device that will penetrate infrared laser (wavelength is about 790nm) is called the infrared semiconductor laser element, and the semiconductor Laser device that will penetrate red laser (wavelength is about 658nm) is called the red semiconductor laser diode.

In addition, as the drive unit of optical recording medium, the reproduction that can carry out CD and DVD or the semicondcutor laser unit of record are arranged.This semicondcutor laser unit possesses infrared semiconductor laser element and red semiconductor laser diode, can penetrate CD with infrared laser and DVD red laser.

Under the situation of using this semicondcutor laser unit, compare with the situation of semicondcutor laser unit with DVD with semicondcutor laser unit with share CD, the number of parts is reduced, so can realize the simplification of the drive unit of optical recording medium.

Infrared semiconductor laser element and red semiconductor laser diode all can be made on the GaAs substrate.Therefore, by being formed on infrared semiconductor laser element and red semiconductor laser diode on the GaAs substrate simultaneously and making its single chip, make the redness/infrared semiconductor laser element of monolithic.Under the redness/infrared semiconductor laser element of the monolithic that will so make was arranged on situation in the above-mentioned semicondcutor laser unit, the luminous point that can critically control infrared laser and red laser at interval.

On the other hand, in order to improve the packing density of optical disk system, and exploitation irradiates the DVD semiconductor Laser device of future generation of the bluish violet color laser (wavelength is about 400nm) of wave of oscillation length.In addition, also develop the semicondcutor laser unit that is mounted with the semiconductor Laser device that penetrates this bluish violet color laser.

In the following description, the semiconductor Laser device that will penetrate bluish violet color laser (wavelength is about 400nm) is called the bluish violet semiconductor Laser device.

This blue semiconductor laser diode is different with the red semiconductor laser diode with the infrared semiconductor laser element, and it is not formed on the GaAs substrate.Therefore, be difficult to the blue semiconductor laser diode with infrared semiconductor laser element and red semiconductor laser diode single chip.

Therefore, proposal has the semicondcutor laser unit of following structure, promptly, by infrared semiconductor laser element and red semiconductor laser diode are formed on the same chip, make the redness/infrared semiconductor laser element of monolithic, simultaneously, after being formed at the bluish violet semiconductor Laser device in another chip, the chip of the redness of the chip of overlapping bluish violet semiconductor Laser device and monolithic/infrared semiconductor laser element (for example opening communique 2001～No. 230502) with reference to the Japan Patent spy.

Illustrate that (Japan Patent) spy opens the semicondcutor laser unit of putting down in writing in 2001～No. 230502 communiques.Figure 50 is the ideograph that expression (Japan Patent) spy opens the semicondcutor laser unit of putting down in writing in 2001～No. 230502 communiques 900.

As shown in figure 50, bluish violet semiconductor Laser device 901 through melting the layer 905 and be bonded in package main body 903 incorporate support component 903a on.This bluish violet semiconductor Laser device 901 and support component 903a machinery with electrically be connected.

Form electrode 901b and insulating barrier 904 in the part on bluish violet semiconductor Laser device 901.On insulating barrier 904, form electrode 901a.On electrode 901a, through melting layer 906 bonding infrared semiconductor laser element 902a, on electrode 901b, through melting layer 907 bonding red semiconductor laser diode 902b.

This infrared semiconductor laser element 902a and red semiconductor laser diode 902b are formed in the integrated integrated semiconductor laser device 902 that turns to monolithic on the same substrate.On integrated semiconductor laser device 902, be formed with electrode 902c.

Connect the electrode 901a clamping insulating barrier 904 of infrared semiconductor laser element 902a and be formed on the bluish violet semiconductor Laser device 901.Thus, can drive the either party of infrared semiconductor laser element 902a and red semiconductor laser diode 902b independently.

Power pin (pin) 909a～909c forms and utilizes dead ring 908a～908c and package main body 903 insulation.

Here, electrode 901a is used as the p electrode of infrared semiconductor laser element 902a, electrode 901b is used as the n electrode of bluish violet semiconductor Laser device 901 and the p electrode of red semiconductor laser diode 902b, and electrode 902c is used as the n electrode of infrared semiconductor laser element 902a and red semiconductor laser diode 902b.

Electrode 901a, 901b, 902c utilize lead-in wire JWa～JWc respectively and are connected on power pin 909a～909c.In addition, from being connected in power pin 903b on the package main body 903 support component 903a that powers.

Thus, the semicondcutor laser unit 900 of Figure 50 can select the arbitrary of infrared laser, red laser and bluish violet color laser to penetrate.

Figure 51 is the circuit diagram of electric wiring of the semicondcutor laser unit 900 of expression Figure 50.

Shown in Figure 51, in order to drive bluish violet semiconductor Laser device 901, the package main body 903 for general ground connection is used need apply negative voltage to power pin 909b.In addition, in order to drive red semiconductor laser diode 902b, need apply the voltage higher to power pin 909b than power pin 909c.And, in order to drive infrared semiconductor laser element 902a, need apply the voltage higher to power pin 909a than power pin 909c.

Therefore, with regard to the semicondcutor laser unit 900 of Figure 50, under the situation of each semiconductor Laser device of individual drive, it is comparatively complicated that the control of driving voltage becomes.

In addition, utilizing alternating voltage to drive under the situation of infrared semiconductor laser element 902a, the insulating barrier 904 of the electrode 901a of connection Figure 50 is used as dielectric as shown in phantom in Figure 51.Thus, electric current flows to red semiconductor laser diode 902b through insulating barrier 904, and the high frequency characteristics of infrared semiconductor laser element 902a is worsened.

Summary of the invention

The object of the present invention is to provide a kind of semicondcutor laser unit, controlling and driving voltage relatively easily, and can suppress the deterioration of the high frequency characteristics of the semiconductor Laser device that the influence because of the layer of insulating properties causes fully.

(1) comprises the support component of conductivity according to the semicondcutor laser unit of one aspect of the invention; Insulating barrier; Be formed at the conductive layer in face of insulating barrier; First semiconductor Laser device possesses first semiconductor layer that is formed on first substrate, is formed at side's electrode of first in first semiconductor layer and is formed at the opposing party's electrode of first in first substrate, penetrates the light of first wavelength; With second semiconductor Laser device, possesses second semiconductor layer that is formed on second substrate, be formed at side's electrode and the opposing party's electrode that is formed at second in second substrate of second in second semiconductor layer, penetrate the light of second wavelength, wherein, second semiconductor layer comprises current blocking layer, narrow down from side's electrode stream of second electric current to the opposing party's electrode of second, first semiconductor Laser device is set on support component, make side's electrode of first be positioned at the support component side, on first the opposing party's electrode of first semiconductor Laser device, order is provided with insulating barrier and conductive layer, second semiconductor Laser device is set on conductive layer, make side's electrode of second be electrically connected in conductive layer, the opposing party's electrode of second and the opposing party's electrode of first are electrically connected, and the capacitance that produces in the insulating barrier is below the capacitance that produces in the current blocking layer.

With regard to this semicondcutor laser unit,, penetrate the light of first wavelength from first semiconductor Laser device by between the opposing party's electrode of side's electrode of first and first, applying voltage.In addition, by to and insulating barrier on side's electrode of second of being electrically connected of conductive layer and the opposing party's electrode of second between apply voltage, penetrate the light of second wavelength from second semiconductor Laser device.

At this moment, when second semiconductor Laser device drove, the current blocking layer of insulating properties and insulating barrier were as dielectric.Here, the capacitance that produces in insulating barrier is below the capacitance that produces in the current blocking layer.Thus, because the capacitance of insulating barrier is little,, the cut-off frequency of second semiconductor Laser device that causes because of the influence of insulating barrier becomes enough little so descending.As a result, fully suppress the deterioration of the high frequency characteristics of second semiconductor Laser device that the influence because of insulating barrier causes.

In addition, the opposing party's electrode of first and the opposing party's electrode of second are electrically connected.Thus, to side's electrode application voltage of first and second, can drive first and second semiconductor Laser devices by respectively individually.As a result, can control the driving voltage of first and second semiconductor Laser devices easily.

Like this, in easy controlling and driving voltage, can fully suppress the deterioration of the high frequency characteristics of second semiconductor Laser device that the influence because of the layer of insulating properties causes.

And, overlap with the wafer that forms a plurality of second semiconductor Laser devices by making the wafer that forms a plurality of first semiconductor Laser devices, can make a plurality of semicondcutor laser units simultaneously.At this moment, the positional precision of each first semiconductor Laser device and each second semiconductor Laser device improves.As a result, the positioning accuracy of the luminous point of first and second semiconductor Laser devices improves.

The heat that produces in first and second semiconductor Laser devices is released by support component.With regard to the semicondcutor laser unit of first invention, first semiconductor Laser device is set, on support component so that side's electrode of first is positioned at the support component side.Thus, be positioned at the luminous point of first semiconductor layer near support component.As a result, the exothermicity of first semiconductor Laser device improves.

(2) also can be that the capacitance that produces in the insulating barrier is below 1/5 of capacitance that produces in the current blocking layer.At this moment, because the capacitance of insulating barrier is minimum, so the decline of the cut-off frequency of second semiconductor Laser device that the influence of insulating barrier causes obviously diminishes.As a result, suppressed the deterioration of the high frequency characteristics of second semiconductor Laser device that the influence because of insulating barrier causes very fully.

(3) also can be that first semiconductor Laser device has first optical waveguide, second semiconductor Laser device has second optical waveguide, and the first that penetrates the insulating barrier in territory, end face lateral areas corresponding to the light at least of second optical waveguide has the high thermal conductivity of second portion than the insulating barrier of removing first.

Here, penetrate under the situation of light at two end faces from second optical waveguide, so-called light penetrates end face and is meant to penetrate than the opposing party's end face and more manys the end face of light.

At this moment, when first semiconductor Laser device drives, when first optical waveguide produces the light of first wavelength, penetrate the light of first wavelength from the end face of light emitting side.At this moment, the heat that first optical waveguide produces is passed to support component, is discharged by support component.

In addition, when second semiconductor Laser device drives, when second optical waveguide produces the light of second wavelength, penetrate the light of second wavelength from the end face of light emitting side.At this moment, the heat that second optical waveguide produces is passed to support component by the insulating barrier and first semiconductor Laser device, is discharged by support component.In second optical waveguide, the caloric value in the zone of light ejaculation end face side is regional bigger than other.

Thus, light penetrates the first of heat that the regional centralized of end face side the produces insulating barrier by having high-termal conductivity in second optical waveguide, and is delivered to first semiconductor Laser device efficiently.

Therefore, in the electric insulation of guaranteeing between first semiconductor Laser device and second semiconductor Laser device, the local exothermicity that improves second semiconductor Laser device.As a result, the exothermicity of semicondcutor laser unit improves.

(4) also can be that the first of insulating barrier has the thickness littler than second portion.At this moment, the thermal conductivity of the first of insulating barrier is than the thermal conductivity height of second portion.Therefore, can easily make the thermal conductivity of first of insulating barrier than the thermal conductivity height of second portion.In addition, because the thickness of second portion is bigger than the thickness of second portion, so, also the insulating properties of insulating barrier integral body can be descended and suppress for a short time even if the thickness of second portion is little.

(5) also can be that the first of insulating barrier comprises first material with first thermal conductivity, the second portion of insulating barrier comprises second material with second thermal conductivity lower than first.At this moment, can easily make the thermal conductivity of first of insulating barrier than the thermal conductivity height of second portion.In addition, by selecting first material, the insulating properties of insulating barrier integral body can be descended and suppress for a short time.

And,, can make the thickness of the thickness of first and second portion roughly the same by selecting first material and second material.At this moment, the manufacturing transfiguration of semicondcutor laser unit is easy.

(6) the present invention's semicondcutor laser unit on the other hand comprises the support component of conductivity; Insulating barrier; Be formed at the conductive layer in face of insulating barrier; First semiconductor Laser device possesses first semiconductor layer that is formed on first substrate, is formed at side's electrode of first in first semiconductor layer and is formed at the opposing party's electrode of first in first substrate, penetrates the light of first wavelength; With second semiconductor Laser device, possesses second semiconductor layer that is formed on second substrate, be formed at side's electrode and the opposing party's electrode that is formed at second in second substrate of second in second semiconductor layer, penetrate the light of second wavelength, wherein, first semiconductor layer comprises first current blocking layer, narrow down from side's electrode stream of first electric current to the opposing party's electrode of first, second semiconductor layer comprises second current blocking layer, narrow down from side's electrode stream of second electric current to the opposing party's electrode of second, first semiconductor Laser device is set on support component, make side's electrode of first be positioned at the support component side, on the opposing party's electrode of first of first semiconductor Laser device, order is provided with insulating barrier and conductive layer, second semiconductor Laser device is set on conductive layer, second side's electrode and conductive layer are electrically connected, the opposing party's electrode of second and the opposing party's electrode of first are electrically connected, and the capacitance that produces in the insulating barrier is below the medium and small side's of the capacitance that produces in first current blocking layer and second current blocking layer the capacitance.

With regard to this semicondcutor laser unit,, penetrate the light of first wavelength from first semiconductor Laser device by between the opposing party's electrode of side's electrode of first and first, applying voltage.In addition, by to and insulating barrier on side's electrode of second of being electrically connected of conductive layer and the opposing party's electrode of second between apply voltage, penetrate the light of second wavelength from second semiconductor Laser device.

At this moment, when first semiconductor Laser device drove, first current blocking layer of insulating properties and insulating barrier were as dielectric.Here, the capacitance that produces in the insulating barrier is below the medium and small side's of the capacitance that produces in first current blocking layer and second current blocking layer the capacitance.Thus, because the capacitance of insulating barrier is little,, the cut-off frequency of first semiconductor Laser device that causes because of the influence of insulating barrier becomes enough little so descending.As a result, fully suppress the deterioration of the high frequency characteristics of first semiconductor Laser device that the influence of insulating barrier causes.

In addition, when second semiconductor Laser device drove, second current blocking layer of insulating properties and insulating barrier were as dielectric.Here, the capacitance that produces in the insulating barrier is below the capacitance that produces in second current blocking layer.Thus, because the capacitance of insulating barrier is little,, the cut-off frequency of second semiconductor Laser device that causes because of the influence of insulating barrier becomes enough little so descending.As a result, fully suppress the deterioration of the high frequency characteristics of second semiconductor Laser device that the influence of insulating barrier causes.

In addition, the opposing party's electrode of first and the opposing party's electrode of second are electrically connected.Thus, by respectively to side's electrode application voltage of first and second, but individual drive first and second semiconductor Laser devices.As a result, can control the driving voltage of first and second semiconductor Laser devices easily.

Like this, in easy controlling and driving voltage, can fully suppress the deterioration of the high frequency characteristics of first and second semiconductor Laser devices that the influence because of the layer of insulating properties causes.

And, overlap with the wafer that forms a plurality of second semiconductor Laser devices by making the wafer that forms a plurality of first semiconductor Laser devices, can make a plurality of semicondcutor laser units simultaneously.At this moment, the positional precision of each first semiconductor Laser device and each second semiconductor Laser device improves.As a result, the positioning accuracy of the luminous point of first and second semiconductor Laser devices improves.

In addition, dispose first and second semiconductor Laser devices, with relative with side's electrode of first and second through insulating barrier.Thus, first and second semiconductor layers are close, can make the luminous point of first and second semiconductor Laser devices approaching mutually.

(7) also can be that the capacitance that produces in the insulating barrier is the medium and small side's of the capacitance that produces in first current blocking layer and second current blocking layer below 1/5 of capacitance.At this moment, because the capacitance of insulating barrier is minimum, so the decline of the cut-off frequency of first and second semiconductor Laser devices that cause because of the influence of insulating barrier obviously diminishes.As a result, suppressed the deterioration of the high frequency characteristics of first and second semiconductor Laser devices that the influence because of insulating barrier causes very fully.

(8) also can be that the capacitance that produces in the insulating barrier is about below the 10pF.At this moment, because the capacitance of insulating barrier is about below the 10pF, so the decline of the cut-off frequency of first and second semiconductor Laser devices that cause because of the influence of insulating barrier diminishes.As a result, suppressed the deterioration of the high frequency characteristics of first and second semiconductor Laser devices that the influence because of insulating barrier causes fully.

(9) also can be that first semiconductor Laser device has first optical waveguide, second semiconductor Laser device has second optical waveguide, and the first that penetrates the insulating barrier in territory, end face lateral areas corresponding to the light at least of second optical waveguide has the high thermal conductivity of second portion than the insulating barrier of removing first.

Here, penetrate under the situation of light at two end faces from second optical waveguide, so-called light penetrates end face and is meant to penetrate than the opposing party's end face and more manys the end face of light.

At this moment, when first semiconductor Laser device drives, when first optical waveguide produces the light of first wavelength, penetrate the light of first wavelength from the end face of light emitting side.At this moment, the heat that first optical waveguide produces is passed to support component, is discharged by support component.

In addition, when second semiconductor Laser device drives, when second optical waveguide produces the light of second wavelength, penetrate the light of second wavelength from the end face of light emitting side.At this moment, the heat that second optical waveguide produces is passed to support component by the insulating barrier and first semiconductor Laser device, is discharged by support component.In second optical waveguide, the caloric value in the zone of light ejaculation end face side is regional bigger than other.

Thus, light penetrates the first of heat that the regional centralized of end face side the produces insulating barrier by having high-termal conductivity in second optical waveguide, is delivered to first semiconductor Laser device efficiently.

Therefore, in the electric insulation of guaranteeing between first semiconductor Laser device and second semiconductor Laser device, the local exothermicity that improves second semiconductor Laser device.As a result, the exothermicity of semicondcutor laser unit improves.

(10) also can be that the first of insulating barrier has the thickness littler than second portion.At this moment, the thermal conductivity of the first of insulating barrier is than the thermal conductivity height of second portion.Therefore, can easily make the thermal conductivity of first of insulating barrier than the thermal conductivity height of second portion.In addition, because the thickness of second portion is bigger than the thickness of second portion, so, also the insulating properties of insulating barrier integral body can be descended and suppress for a short time even if the thickness of second portion is little.

(11) also can be that the first of insulating barrier comprises first material with first thermal conductivity, the second portion of insulating barrier comprises second material with second thermal conductivity lower than first.At this moment, can easily make the thermal conductivity of first of insulating barrier than the thermal conductivity height of second portion.In addition, by selecting first material, the insulating properties of insulating barrier integral body can be descended and suppress for a short time.

And,, can make the thickness of the thickness of first and second portion roughly the same by selecting first material and second material.At this moment, the manufacturing transfiguration of semicondcutor laser unit is easy.

(12) semicondcutor laser unit of further aspect of the present invention comprises the support component of conductivity; Insulating barrier; First semiconductor Laser device possesses first semiconductor layer that is formed on first substrate, is formed at side's electrode of first in first semiconductor layer and is formed at the opposing party's electrode of first in first substrate, penetrates the light of first wavelength; With second semiconductor Laser device, possesses second semiconductor layer that is formed on second substrate, be formed at side's electrode and the opposing party's electrode that is formed at second in second substrate of second in second semiconductor layer, penetrate the light of second wavelength, wherein, first semiconductor layer comprises first current blocking layer of insulating properties, narrow down from side's electrode stream of first electric current to the opposing party's electrode of first, second semiconductor layer comprises second current blocking layer, narrow down from side's electrode stream of second electric current to the opposing party's electrode of second, conductive layer is formed in the regulation zone of first current blocking layer, with with side's electrode insulation of first, first semiconductor Laser device is set on support component, make the opposing party's electrode of first be positioned at the support component side, second semiconductor Laser device is set on conductive layer, second side's electrode and conductive layer are electrically connected, the opposing party's electrode of second and the opposing party's electrode of first are electrically connected, and the capacitance that produces in first current blocking layer under the conductive layer is below the capacitance that produces in second current blocking layer.

With regard to this semicondcutor laser unit,, penetrate the light of first wavelength from first semiconductor Laser device by between the opposing party's electrode of side's electrode of first and first, applying voltage.In addition, by to and the first current blocking layer regulation zone on side's electrode of second of being electrically connected of conductive layer and the opposing party's electrode of second between apply voltage, penetrate the light of second wavelength from second semiconductor Laser device.

At this moment, when second semiconductor Laser device drove, first and second current blocking layers of insulating properties were as dielectric.Here, the capacitance that produces in first current blocking layer is below the capacitance that produces in second current blocking layer.Thus, because the capacitance of first current blocking layer is little,, the cut-off frequency of second semiconductor Laser device that the influence of first current blocking layer causes becomes enough little so descending.As a result, fully suppress the deterioration of the high frequency characteristics of second semiconductor Laser device that the influence because of first current blocking layer causes.

In addition, the opposing party's electrode of first and the opposing party's electrode of second are electrically connected.Thus, by respectively to side's electrode application voltage of first and second, but individual drive first and second semiconductor Laser devices.As a result, can control the driving voltage of first and second semiconductor Laser devices easily.

Like this, in easy controlling and driving voltage, can fully suppress the deterioration of the high frequency characteristics of second semiconductor Laser device that the influence because of the layer of insulating properties causes.

And, overlap with the wafer that forms a plurality of second semiconductor Laser devices by making the wafer that forms a plurality of first semiconductor Laser devices, can make a plurality of semicondcutor laser units simultaneously.At this moment, the positional precision of each first semiconductor Laser device and each second semiconductor Laser device improves.As a result, the positioning accuracy of the luminous point of first and second semiconductor Laser devices improves.

In addition, dispose first and second semiconductor Laser devices, make side's electrode of first and second relative.Thus, because first and second semiconductor layers are close, so can make the luminous point of first and second semiconductor Laser devices approaching mutually.

(13) also can be that the capacitance that produces in first current blocking layer is below 1/5 of capacitance that produces in second current blocking layer.At this moment, because the capacitance of first current blocking layer is minimum, so the decline of the cut-off frequency of first and second semiconductor Laser devices that the influence of first current blocking layer causes obviously diminishes.As a result, suppressed the deterioration of the high frequency characteristics of first and second semiconductor Laser devices that the influence of first current blocking layer causes very fully.

The capacitance that produces in first current blocking layer also can be below about 10pF.At this moment, because the capacitance of first current blocking layer is about below the 10pF, so the decline of the cut-off frequency of first and second semiconductor Laser devices that the influence of first current blocking layer causes diminishes.As a result, suppressed the deterioration of the high frequency characteristics of first and second semiconductor Laser devices that the influence of first current blocking layer causes fully.

(14) also can be that first semiconductor Laser device has first optical waveguide, second semiconductor Laser device has second optical waveguide, and the first that penetrates first current blocking layer under the conductive layer in territory, end face lateral areas corresponding to the light at least of second optical waveguide has the high thermal conductivity of second portion than first current blocking layer under the conductive layer of removing first.

Here, penetrate under the situation of light at two end faces from second optical waveguide, so-called light penetrates end face and is meant to penetrate than the opposing party's end face and more manys the end face of light.

At this moment, when first semiconductor Laser device drives, when first optical waveguide produces the light of first wavelength, penetrate the light of first wavelength from the end face of light emitting side.At this moment, the heat that first optical waveguide produces is passed to support component, is discharged by support component.

In addition, when second semiconductor Laser device drives, when second optical waveguide produces the light of second wavelength, penetrate the light of second wavelength from the end face of light emitting side.At this moment, the heat that second optical waveguide produces is by comprising first semiconductor Laser device of first current blocking layer under the conductive layer, and is passed to support component, discharged by support component.In second optical waveguide, the caloric value in the zone of light ejaculation end face side is regional bigger than other.

Thus, the heat that the regional centralized of light ejaculation end face side produces in second optical waveguide is delivered to first semiconductor Laser device efficiently by the first of first current blocking layer under the conductive layer with high-termal conductivity.

Therefore, in the electric insulation of guaranteeing between first semiconductor Laser device and second semiconductor Laser device, the local exothermicity that improves second semiconductor Laser device.As a result, the exothermicity of semicondcutor laser unit improves.

(15) also can be that the first of first current blocking layer under the conductive layer has the thickness littler than second portion.At this moment, the thermal conductivity of the first of first current blocking layer under the conductive layer is than the thermal conductivity height of second portion.Therefore, can easily make the thermal conductivity of first of first current blocking layer under the conductive layer than the thermal conductivity height of second portion.In addition, because the thickness of second portion is bigger than the thickness of second portion, so, also the insulating properties of the first current blocking layer integral body under the conductive layer can be descended and suppress for a short time even if the thickness of first is little.

(16) also can be that the first of first current blocking layer under the conductive layer comprises first material with first thermal conductivity, the second portion of first current blocking layer under the conductive layer comprises second material with second thermal conductivity lower than first.At this moment, can easily make the thermal conductivity of first of first current blocking layer under the conductive layer than the thermal conductivity height of second portion.In addition, by selecting first material, the insulating properties of the first current blocking layer integral body under the conductive layer can be descended and suppress for a short time.

And,, can make the thickness of the thickness of first and second portion roughly the same by selecting first material and second material.At this moment, the manufacturing transfiguration of semicondcutor laser unit is easy.

(17)、(20)、(23)

Also can be also to possess auxiliary substrate, insert between the support component and first semiconductor Laser device to have specific thickness.At this moment, can adjust the luminous point position of first and second semiconductor Laser devices.

(18)、(21)、(24)

Also can be that first semiconductor Laser device comprises nitride-based semiconductor.The thermal conductivity height of nitride-based semiconductor.Thus, the exothermicity of first semiconductor Laser device improves.In addition because on first semiconductor Laser device lamination second semiconductor Laser device, so the exothermicity of the second semiconductor laser unit also improves.

(19)、(22)、(25)

Also can be that first and second the opposing party's electrodes are when being electrically connected mutually, with the support component electric insulation.At this moment, can apply voltage respectively to first and second the opposing party's electrodes.

(other)

Semicondcutor laser unit also can further possess the conductivity that is formed between second semiconductor Laser device and the conductive layer and melt layer.Thus, even if in the bonding part between second semiconductor Laser device and conductive layer under the gapped situation, also can in this interval, fill and melt layer.Thus, can prevent between second semiconductor Laser device and conductive layer, to produce the space.

As a result, when second semiconductor Laser device drove, the heat that is produced by second semiconductor Laser device was delivered to first semiconductor Laser device effectively by melting layer, is discharged by support component.Therefore, the exothermicity of semicondcutor laser unit further improves.

Also can be that the first and second optical waveguide extend to the other end from an end face of second semiconductor Laser device abreast.Thus, the heat that second optical waveguide produces is delivered to first semiconductor Laser device effectively, is discharged by support component.

According to semicondcutor laser unit of the present invention, can become in the control of driving voltage and be easy to simultaneously, fully suppress the deterioration of the high frequency characteristics of the semiconductor Laser device that the influence because of the layer of insulating properties causes.

Description of drawings

Fig. 1 is the stereoscopic figure of the semicondcutor laser unit of expression first execution mode.

Fig. 2 is the pattern front elevation that the state behind the lid of semicondcutor laser unit of Fig. 1 is taken off in expression.

Fig. 3 schemes above the pattern of the state behind the lid of semicondcutor laser unit of Fig. 1 is taken off in expression.

Fig. 4 is the circuit diagram of electric wiring of the semicondcutor laser unit of expression first execution mode.

Fig. 5 is used for the auxiliary substrate of key diagram 2 and the insulating barrier equivalent circuit diagram as dielectric effect.

Fig. 6 is the graph of a relation of the thickness of the capacitance that produces in insulating barrier when driving of the red semiconductor laser diode of presentation graphs 2 and insulating barrier.

Fig. 7 is the pattern sectional view of the structure detail of explanation bluish violet semiconductor Laser device.

Fig. 8 is the pattern sectional view of the structure detail of explanation red semiconductor laser diode.

Fig. 9 is the pattern sectional view of the structure detail of explanation infrared semiconductor laser element.

Figure 10 is the pattern front elevation that the state behind the lid of semicondcutor laser unit of second execution mode is taken off in expression.

Figure 11 schemes above the pattern of the state behind the lid of semicondcutor laser unit of second execution mode is taken off in expression.

Figure 12 is used to illustrate the equivalent circuit diagram of the insulating barrier of Figure 10 as dielectric effect.

Figure 13 is the pattern front elevation that the state behind the lid of semicondcutor laser unit of the 3rd execution mode is taken off in expression.

Figure 14 schemes above the pattern of the state behind the lid of semicondcutor laser unit of the 3rd execution mode is taken off in expression.

Figure 15 is the stereoscopic figure of the semicondcutor laser unit of expression the 4th execution mode.

Figure 16 is the pattern front elevation that the state behind the lid of semicondcutor laser unit of Figure 15 is taken off in expression.

Figure 17 schemes above the pattern of the state behind the lid of semicondcutor laser unit of Figure 15 is taken off in expression.

Figure 18 is the circuit diagram of electric wiring of the semicondcutor laser unit of expression the 4th execution mode.

Figure 19 is the pattern front elevation that the state behind the lid of semicondcutor laser unit of the 5th execution mode is taken off in expression.

Figure 20 schemes above the pattern of the state behind the lid of semicondcutor laser unit of the 5th execution mode is taken off in expression.

Figure 21 is the circuit diagram of electric wiring of the semicondcutor laser unit of expression the 5th execution mode.

Figure 22 is the pattern front elevation that the state behind the lid of semicondcutor laser unit of the 6th execution mode is taken off in expression.

Figure 23 schemes above the pattern of the state behind the lid of semicondcutor laser unit of the 6th execution mode is taken off in expression.

Figure 24 is the graph of a relation of the thickness of the capacitance that produces in the electric current barrier layer when driving of the bluish violet semiconductor Laser device of expression Figure 22 and electric current barrier layer.

Figure 25 is the stereoscopic figure of the semicondcutor laser unit of expression the 7th execution mode.

Figure 26 is the pattern front elevation that the state behind the lid of semicondcutor laser unit of Figure 25 is taken off in expression.

Figure 27 schemes above the pattern of the state behind the lid of semicondcutor laser unit of Figure 25 is taken off in expression.

Figure 28 is the local amplification front view of Fig. 2.

Figure 29 is the circuit diagram of electric wiring of the semicondcutor laser unit of expression the 7th execution mode.

Figure 30 is used for the auxiliary substrate of key diagram 2 and the insulating barrier equivalent circuit diagram as dielectric effect.

Figure 31 is the pattern sectional view of the structure detail of explanation bluish violet semiconductor Laser device.

Figure 32 is that heat release in the explanation XY plane is with the top figure of the semicondcutor laser unit of Figure 25 of the shape of insulating barrier.

Figure 33 is the local amplification front view of another configuration example of insulating barrier of the semicondcutor laser unit of expression the 7th execution mode.

Figure 34 is the local amplification front view of another configuration example of insulating barrier of the semicondcutor laser unit of expression the 7th execution mode.

Figure 35 is the local amplification front view of another configuration example of insulating barrier of the semicondcutor laser unit of expression the 7th execution mode.

Figure 36 is the pattern front elevation that the state behind the lid of semicondcutor laser unit of the 8th execution mode is taken off in expression.

Figure 37 schemes above the pattern of the state behind the lid of semicondcutor laser unit of the 8th execution mode is taken off in expression.

Figure 38 is used to illustrate the equivalent circuit diagram of the insulating barrier of Figure 36 as dielectric effect.

Figure 39 is the pattern front elevation that the state behind the lid of semicondcutor laser unit of the 9th execution mode is taken off in expression.

Figure 40 schemes above the pattern of the state behind the lid of semicondcutor laser unit of the 9th execution mode is taken off in expression.

Figure 41 is the stereoscopic figure of the semicondcutor laser unit of expression the tenth execution mode.

Figure 42 is the pattern front elevation that the state behind the lid of semicondcutor laser unit of Figure 41 is taken off in expression.

Figure 43 schemes above the pattern of the state behind the lid of semicondcutor laser unit of Figure 41 is taken off in expression.

Figure 44 is the circuit diagram of electric wiring of the semicondcutor laser unit of expression the tenth execution mode.

Figure 45 is the pattern front elevation that the state behind the lid of semicondcutor laser unit of the 11 execution mode is taken off in expression.

Figure 46 schemes above the pattern of the state behind the lid of semicondcutor laser unit of the 11 execution mode is taken off in expression.

Figure 47 is the circuit diagram of electric wiring of the semicondcutor laser unit of expression the 11 execution mode.

Figure 48 is the pattern front elevation that the state behind the lid of semicondcutor laser unit of the 12 execution mode is taken off in expression.

Figure 49 schemes above the pattern of the state behind the lid of semicondcutor laser unit of the 12 execution mode is taken off in expression.

Figure 50 is the ideograph that expression Japan Patent spy opens the semicondcutor laser unit of putting down in writing in 2001～No. 230502 communiques.

Figure 51 is the circuit diagram of electric wiring of the semicondcutor laser unit of expression Figure 50.

Embodiment

Below, the semicondcutor laser unit of an embodiment of the present invention is described.

1. first execution mode

(1) formation of semicondcutor laser unit and line

The semicondcutor laser unit of first execution mode possesses first semiconductor Laser device and second semiconductor Laser device.The optical maser wavelength that first semiconductor Laser device penetrates is different with the optical maser wavelength that second semiconductor Laser device penetrates.

In the following description, will penetrate the semiconductor Laser device (below be called the bluish violet semiconductor Laser device) of bluish violet color laser (wavelength is about 400nm) as first semiconductor Laser device.

In addition, will penetrate the semiconductor Laser device (below be called the red semiconductor laser diode) of red laser (wavelength is about 658nm) as second semiconductor Laser device.

Fig. 1 is the stereoscopic figure of the semicondcutor laser unit of expression first execution mode.

Among Fig. 1, semicondcutor laser unit 500 comprises conductivity package main body 3, power pin 1a, 1b, 2 and lid 4.

In package main body 3, be provided with a plurality of semiconductor Laser devices of aftermentioned, and by lid 4 sealings.In lid 4, be provided with and take out window 4a.Taking out window 4a is made of the material that sees through laser.In addition, power pin 2 mechanically with electrically is connected with package main body 3.Power pin 2 is used as earth terminal.

The details of semicondcutor laser unit 500 is described.Below, the direction that shoots out from the laser of semiconductor Laser device is illustrated as the front.

Fig. 2 is the pattern front elevation that the state behind the lid 4 of semicondcutor laser unit 500 of Fig. 1 is taken off in expression, and Fig. 3 schemes above the pattern of the state behind the lid 4 of the expression semicondcutor laser unit 500 that takes off Fig. 1.

In the following description, as shown in Figures 2 and 3, to be defined as directions X from the ejaculation direction of the laser of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20, will in face, be defined as Y direction and Z direction by mutually orthogonal both direction perpendicular to directions X.

As shown in Figure 2, with package main body 3 incorporate conductivity support components 5 on, what form conductivity is melting a layer H.Support component 5 is made of conductivity and the good material of thermal conductivity, is melting layer H and is being made of AuSn (golden tin).

Melting on the layer H, above being arranged on and below possess the auxiliary substrate 31 of the insulating properties of conductive layer 31a, 31b.Auxiliary substrate 31 is made of AlN (aluminium nitride).The thickness of auxiliary substrate 31 for example is about about 200 μ m.

On the conductive layer 31a of auxiliary substrate 31, melting layer H and bonding bluish violet semiconductor Laser device 10 via what AuSn constituted.

Bluish violet semiconductor Laser device 10 has the laminated structure that comprises p side liner electrode 10a, n side liner electrode 10b and electric current barrier layer 10c.Bluish violet semiconductor Laser device 10 is arranged to p side liner electrode 10a and is constituted support component 5 sides.

In Fig. 2, n side liner electrode 10b is positioned at the upper face side of bluish violet semiconductor Laser device 10, and p side liner electrode 10a is positioned at the following side of bluish violet semiconductor Laser device 10.In addition, on p side liner electrode 10a, have protrusion Ri, have electric current barrier layer 10c in the both sides of protrusion Ri.The details of bluish violet semiconductor Laser device 10 as described later.

The n side liner electrode 10b of bluish violet semiconductor Laser device 10 is provided with by SiO ₂ The insulating barrier 32 that (silica) constitutes.In the following description, the thickness with this insulating barrier 32 is made as t32.The details of the thickness t 32 of insulating barrier 32 as described later.

On insulating barrier 32, form the conductive layer 32a that comprises Au.On conductive layer 32a, melting layer H and bonding red semiconductor laser diode 20 via what AuSn constituted.

Red semiconductor laser diode 20 has the laminated structure that comprises p side liner electrode 20a, n side liner electrode 20b and the first electric current barrier layer 20c.Red semiconductor laser diode 20 is arranged to p side liner electrode 20a and is constituted support component 5 sides.

In Fig. 2, n side liner electrode 20b is positioned at the upper face side of red semiconductor laser diode 20, and p side liner electrode 20a is positioned at the following side of red semiconductor laser diode 20.In addition, on p side liner electrode 20a, have protrusion Ri, have the first electric current barrier layer 20c in the both sides of protrusion Ri.The details of red semiconductor laser diode 20 as described later.

Be arranged to the central portion that bluish violet semiconductor Laser device 10 is positioned at the taking-up window 4a (with reference to Fig. 1) of lid 4.

As shown in Figures 2 and 3, power pin 1a, 1b utilize dead ring 1z respectively and with package main body 3 electric insulations.Power pin 1a is electrically connected on the conductive layer 31a on the auxiliary substrate 31 through lead-in wire W4.Power pin 1b is electrically connected in conductive layer 32a on the insulating barrier 32 through lead-in wire W1.

On the other hand, the n side liner electrode 10b of the top and bluish violet semiconductor Laser device 10 that exposes of support component 5 utilizes lead-in wire W3 and is electrically connected, and the n side liner electrode 20b of the top and red semiconductor laser diode 20 that exposes of support component 5 utilizes lead-in wire W2 and is electrically connected.Thus, power pin 2 is electrically connected with the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and the n side liner electrode 20b of red semiconductor laser diode 20.That is, realize the common cathode line of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

By to applying voltage between the power pin 1a, 2 and between the power pin 1b, 2 respectively, and can individual drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

Fig. 4 is the circuit diagram of electric wiring of the semicondcutor laser unit 500 of expression first execution mode.

As mentioned above, power pin 2 is electrically connected with the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and the n side liner electrode 20b of red semiconductor laser diode 20 when being electrically connected with support component 5.

On the other hand, the p side liner electrode 20a of the p side liner electrode 10a of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 and support component 5, be power pin 2 electric insulations.

In the semicondcutor laser unit 500 of first execution mode, by applying the voltage higher to one of power pin 1a, 1b than earthing potential, and can individual drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.As a result, make the driving voltage control of each semiconductor Laser device become more or less freely.

(2) auxiliary substrate and insulating barrier are as dielectric effect and effect thereof

But above-mentioned semicondcutor laser unit 500 is set in optical Pickup device etc.Usually, utilize alternating voltage to drive optical Pickup device.That is, utilize alternating voltage to drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.At this moment, the auxiliary substrate 31 of Fig. 2 and insulating barrier 32 are as dielectric.

Fig. 5 is used for the auxiliary substrate 31 of key diagram 2 and insulating barrier 32 equivalent circuit diagram as dielectric effect.

Equivalent circuit diagram when Fig. 5 (a) expression drives bluish violet semiconductor Laser device 10, the equivalent circuit diagram when Fig. 5 (b) expression drives red semiconductor laser diode 20.

Utilizing alternating voltage to drive under the situation of bluish violet semiconductor Laser device 10, bluish violet semiconductor Laser device 10 is shown in Fig. 5 (a), and Ri is made as resistance with protrusion, and 10c is expressed as dielectric with the electric current barrier layer.At this moment, the auxiliary substrate 31 of insulating properties is used as the dielectric that is connected in parallel with bluish violet semiconductor Laser device 10.

Usually, represent the capacitance that produces in the layer of insulating properties with following formula.

C1＝εs·ε0·S/d…(1)

C1 is the capacitance that produces in the layer of insulating properties, and ε s is the ratio dielectric constant of the layer of insulating properties, and ε 0 is the dielectric constant of vacuum.In addition, S is the area of the layer of insulating properties, and D is the thickness of the layer of insulating properties.

In the first embodiment, the electric current barrier layer 10c as the layer of insulating properties has the thickness (Z direction) of 0.5 μ m.In addition, bluish violet semiconductor Laser device 10 has the width (Y direction) of about 350 μ m, has the length (directions X) of about 600 μ m.

In addition, by SiO ₂The ratio dielectric constant of the electric current barrier layer 10c that constitutes is 4, and the dielectric constant of vacuum is 8.854 * 10 ^-12F/m.

The width (Y direction) that is formed at the protrusion Ri on the bluish violet semiconductor Laser device 10 is compared with the width of bluish violet semiconductor Laser device 10, and is very little.Here, thickness, width and the length with electric current barrier layer 10c is made as 0.5 μ m, 350 μ m and 600 μ m.At this moment, if obtain the capacitance that produces among the electric current barrier layer 10c according to formula (1), then the capacitance that produces among the electric current barrier layer 10c is about 15pF.

On the contrary, the thickness of auxiliary substrate 31 is about 200 μ m.Be about 350 μ m and length (directions X) is about under the situation of 600 μ m at the width (Y direction) of bluish violet semiconductor Laser device 10, if obtain the capacitance that produces in the auxiliary substrate 31 according to formula (1), the capacitance that produces in auxiliary substrate 31 when then bluish violet semiconductor Laser device 10 drives is about below the 100fF.

Like this, in the first embodiment, the capacitance that produces in auxiliary substrate 31 is compared with the capacitance that produces in the electric current barrier layer 10c of bluish violet semiconductor Laser device 10, and very little value is shown.

Therefore, under the situation that only drives bluish violet semiconductor Laser device 10, the capacitance that produces among the total (hereinafter referred to as the actual effect capacitance) of the capacitance that produces among auxiliary substrate 31 and the electric current barrier layer 10c and the electric current barrier layer 10c about equally.

Calculate the cut-off frequency of bluish violet semiconductor Laser device 10 according to the actual effect capacitance.Cut-off frequency is high more, and the high frequency characteristics when then semiconductor Laser device drives is good more.

The cut-off frequency of representing semiconductor Laser device simply by following formula.

$\mathrm{fT}=\frac{1}{2\mathrm{\π}\sqrt{\mathrm{LC}}}\·\·\·\left(2\right)$

FT is the cut-off frequency of semiconductor Laser device, and L is the inductance of semiconductor Laser device, the actual effect capacitance when C is the semiconductor Laser device driving.

At this moment, as the formula (2), 1/2 power of the cut-off frequency of bluish violet semiconductor Laser device 10 and actual effect capacitance is inversely proportional to.Therefore, the actual effect capacitance of bluish violet semiconductor Laser device 10 is more little, and then cut-off frequency is high more.

As mentioned above, the capacitance that produces in auxiliary substrate 31 is in a ratio of under the very little situation with the capacitance that produces in electric current barrier layer 10c, and the decline of the cut-off frequency that causes because of the influence of auxiliary substrate 31 becomes enough little.As a result, fully suppress the deterioration of the high frequency characteristics of the bluish violet semiconductor Laser device 10 that the influence of auxiliary substrate 31 causes.

On the other hand, utilizing alternating voltage to drive under the situation of red semiconductor laser diode 20, red semiconductor laser diode 20 is shown in Fig. 5 (b), and Ri is made as resistance with protrusion, and the first electric current barrier layer 20c is expressed as dielectric.At this moment, insulating barrier 32 is used as the dielectric that is connected in parallel with red semiconductor laser diode 20.

In the first embodiment, the thickness (Z direction) that has 0.5 μ m as the first electric current barrier layer 20c of transition zone effect.In addition, red semiconductor laser diode 20 has the width (Y direction) of about 200 μ m, has the length (directions X) of about 600 μ m.In addition, the first electric current barrier layer 20c as the transition zone effect is made of AlInP.

The width (Y direction) that is formed at the protrusion Ri in the red semiconductor laser diode 20 is compared with the width of red semiconductor laser diode 20, and is very little.Here, thickness, width and the length with the first electric current barrier layer 20c is made as 0.5 μ m, 200 μ m and 600 μ m.In addition, the ratio dielectric constant of AlInP is about 13.At this moment, if obtain the capacitance that produces among the first electric current barrier layer 20c according to formula (1), then the capacitance that produces among the first electric current barrier layer 20c is about 28pF.

Here, the thickness t 32 of insulating barrier 32 capacitance that is configured in the insulating barrier 32 to produce is below the capacitance that produces among the first electric current barrier layer 20c.

For example, be about 300 μ m, and length (directions X) is about under the situation of 600 μ m, calculates the capacitance that red semiconductor laser diode 20 produces in the insulating barrier 32 when driving according to thickness t 32 and above-mentioned formula (1) at the width (Y direction) of insulating barrier 32.That is, the capacitance that produces in the insulating barrier 32 has the relation that is inversely proportional to thickness t 32.

Fig. 6 is the graph of a relation of the thickness of the capacitance that produces in insulating barrier 32 when driving of the red semiconductor laser diode 20 of presentation graphs 2 and insulating barrier 32.In Fig. 6, the longitudinal axis is represented capacitance, and transverse axis is represented the thickness t 32 of insulating barrier 32.

According to Fig. 6, be below the capacitance that produces among the first electric current barrier layer 20c of red semiconductor laser diode 20 in order to make the capacitance that in insulating barrier 32, produces, the thickness t 32 of insulating barrier 32 need be set at more than the 0.23 μ m.

Be set at more than the 0.23 μ m by the thickness t 32 with insulating barrier 32, can make the capacitance that produces in the insulating barrier 32 is below the capacitance that produces among the first electric current barrier layer 20c of red semiconductor laser diode 20.

The actual effect capacitance of this moment be the capacitance that produces among the first electric current barrier layer 20c with insulating barrier 32 in the addition value of capacitance of generation, think below the twice of the capacitance that produces among the first electric current barrier layer 20c.

According to formula (2), 1/2 power of the cut-off frequency of red semiconductor laser diode 20 and actual effect capacitance is inversely proportional to.Its result, the capacitance that in insulating barrier 32, produces for the capacitance that in the first electric current barrier layer 20c, produces when following red semiconductor laser diode 20 and the cut-off frequency of infrared semiconductor laser element 30, the cut-off frequency when never insulating barrier 32 being set descends about three one-tenth at most.

Like this, by setting the thickness of insulating barrier 32, making in the insulating barrier 32 capacitance that produces is below the capacitance that produces among the first electric current barrier layer 20c, the cut-off frequency of the red semiconductor laser diode 20 that the influence because of insulating barrier 32 causes is descended become enough little.That is, fully suppress the high frequency characteristics deterioration of red semiconductor laser diode 20.

The structure detail of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is described here.

(3) structure detail of bluish violet semiconductor Laser device

According to Fig. 7, in the explanation manufacture method, the structure detail of bluish violet semiconductor Laser device 10 is described.

Fig. 7 is the pattern sectional view of the structure detail of explanation bluish violet semiconductor Laser device 10.In the following description, the same directions X, Y direction and the Z direction of defining with Fig. 2 and Fig. 3.

When making bluish violet semiconductor Laser device 10, on n-GaN substrate 1s, form semiconductor layer with laminated structure.N-GaN substrate 1s is made as the surface with (0001) Ga face, has the thickness of about 100 μ m.In addition, the O (oxygen) that in n-GaN substrate 1s, mixes.

Shown in Fig. 7 (a), on n-GaN substrate 1s, as the semiconductor layer with laminated structure, order forms n-GaN layer 101, n-AlGaN covering 102, n-GaN optical waveguide layer 103, MQW (multiple quantum trap family) active layer 104, not doped with Al GaN top (cap) layer 105, not Doped GaN optical waveguide layer 106, p-AlGaN covering 107 and the GaInN contact layer 108 that do not mix.The formation of these each layers is for example undertaken by mocvd method (MOCVD method).

Shown in Fig. 7 (b), MQW active layer 104 has the structure with four do not mix GaInN barrier layer 104a and three mutual laminations of GaInN well family layer 104b of not mixing.

Here, for example the Al of n-AlGaN covering 102 consists of 0.15, and Ga consists of 0.85.To n-GaN layer 101 and n-AlGaN covering 102 doping Si.

In addition, the Ga of the GaInN barrier layer of not mixing 104a consists of 0.95, and In consists of 0.05.The Ga of GaInN well family layer 104b of not mixing consists of 0.90, and In consists of 0.10.The Al of p-AlGaN top layer 105 consists of 0.30, and Ga consists of 0.70.

And the Al of p-AlGaN covering 107 consists of 0.15, and Ga consists of 0.85.Doped with Mg in p-AlGaN covering 107.The Ga of GaInN contact layer 108 of not mixing consists of 0.95, and In consists of 0.05.

In above-mentioned semiconductor layer, in p-AlGaN covering 107, form the banded protrusion Ri that extends along directions X.The protrusion Ri of p-AlGaN covering 107 has the width of about 1.5 μ m.

The GaInN contact layer 108 that do not mix be formed at p-AlGaN covering 107 protrusion Ri above.And, form the p electrode 110 that constitutes by Pd/Pt/Au thereon.

On the par of p-AlGaN covering 107 and the side of the side of protrusion Ri, the GaInN contact layer 108 that do not mix and P electrode 110 above and in the side, form by SiO ₂The electric current barrier layer 10c that constitutes utilizes etching to remove the electric current barrier layer 10c that is formed on the p electrode 110.In addition, utilize sputtering method, vacuum deposition method or electron beam deposition method to form p side liner electrode 10a, with covering be exposed to outside p electrode 110 and electric current barrier layer 10c above.

Like this, the one side side at n-GaN substrate 1s has formed the semiconductor layer with laminated structure.In addition, the another side side at n-GaN substrate 1s forms the n side liner electrode 10b that is made of Ti/Pt/Au.And, in a part of zone on n side liner electrode 10b, form by SiO ₂ The insulating barrier 32 that constitutes forms the conductive layer 32a that comprises Au on insulating barrier 32.

As mentioned above, in the first embodiment, by SiO ₂The electric current barrier layer 10c that constitutes has for example thickness of 0.5 μ m.

In this bluish violet semiconductor Laser device 10, the position of the MQW active layer 104 below protrusion Ri forms the bluish violet luminous point.Wherein, MQW active layer 104 is equivalent to the pn composition surface of bluish violet semiconductor Laser device 10.

(4) structure detail of red semiconductor laser diode

According to Fig. 8, in the explanation manufacture method, the structure detail of red semiconductor laser diode 20 is described.

Fig. 8 is the pattern sectional view of the structure detail of explanation red semiconductor laser diode 20.

When making red semiconductor laser diode 20, on n-GaAs substrate 5X, form semiconductor layer with laminated structure.Si mixes in this n-GaAs substrate 5X.

Shown in Fig. 8 (a), on n-GaAs substrate 5X, as the semiconductor layer with laminated structure, order forms n-GaAs layer 201, n-AlGaInP covering 202, not doped with Al GaInP optical waveguide layer 203, MQW (multiple quantum trap family) active layer 204, not doped with Al GaInP optical waveguide layer 205, p-AlGaInP first covering 206, p-InGaP etching stopping layer 207, p-AlGaInP second covering 208 and p-contact layer 209.The formation of these each layers is for example undertaken by mocvd method (MOCVD method).

Shown in Fig. 8 (b), MQW active layer 204 has two structures of doped with Al GaInP barrier layer 204a and three mutual laminations of InGaP well family layer 204b of not mixing not.

Here, for example the Al of n-AlGaInP covering 202 consists of 0.70, and Ga consists of 0.30, and In consists of 0.50, and P consists of 0.50.To n-GaAs layer 201 and n-AlGaInP covering 202 doping Si.

The Al of doped with Al GaInP optical waveguide layer 203 does not consist of 0.50, and Ga consists of 0.50, and In consists of 0.50, and P consists of 0.50.

In addition, the Al of doped with Al GaInP barrier layer 204a does not consist of 0.50, and Ga consists of 0.50, and In consists of 0.50, and P consists of 0.50.The In of InGaP well family layer 204b of not mixing consists of 0.50, and Ga consists of 0.50.The Al of doped with Al GaInP optical waveguide layer 205 does not consist of 0.50, and Ga consists of 0.50, and In consists of 0.50, and P consists of 0.50.

And the Al of p-AlGaInP first covering 206 consists of 0.70, and Ga consists of 0.30, and In consists of 0.50, and P consists of 0.50.The In of p-InGaP etching stopping layer 207 consists of 0.50, and P consists of 0.50.

The Al of p-AlGaInP second covering 208 consists of 0.70, and Ga consists of 0.30, and In consists of 0.50, and P consists of 0.50.

P-contact layer 209 has the laminated structure of p-GaInP layer and p-GaAs layer.The Ga of this p-GaInP layer consists of 0.50, and In consists of 0.50.

Wherein, the composition of above-mentioned AlGaInP class material general expression (Al _aGa _b) _0.5In _cP _dA during expression is that Al forms, and b is that Ga forms, and c is that In forms, and d is that P forms.

Doping of Zn in the p-GaInP of p-AlGaInP first covering 206, p-InGaP etching stopping layer 207, p-AlGaInP second covering 208 and p-contact layer 209 and p-GaAs.

P-AlGaInP second covering 208 on the p-InGaP etching stopping layer 207 and p-contact layer 209 are being removed subregion (central portion) after etching removal.

Thus, utilize that p-AlGaInP second covering 208 and p-contact layer 209 form the banded protrusion Ri that extends along directions X in the above-mentioned semiconductor layer.The protrusion Ri that p-AlGaInP second covering 208 and p-contact layer 209 constitute has the width of about 2.5 μ m.

On p-InGaP etching stopping layer 207, in the side of the side of p-AlGaInP second covering 208 and p-contact layer 209, lamination also selectively forms and is about the first electric current barrier layer 20c and the thickness that 0.5 μ m constitutes by thickness and is about the second electric current barrier layer 20d that 0.3 μ m constitutes.In addition, utilize sputtering method, vacuum deposition method or electron beam deposition method to form the p side liner electrode 20a that Cr/Au constitutes, be exposed to covering outside p-contact layer 209 the top and second electric current barrier layer 20d above.

Wherein, the first electric current barrier layer 20c is made of doped with Al InP not, as the transition zone effect.In addition, the second electric current barrier layer 20d is made of n-GaAs.

Like this, the one side side at n-GaAs substrate 5X forms the semiconductor layer with laminated structure.And, form the n side liner electrode 20b that constitutes by AuGe/Ni/Au in the another side side of n-GaAs substrate 5X.

In this red semiconductor laser diode 20, the position of the MQW active layer 204 below protrusion Ri forms the emitting red light point.Wherein, MQW active layer 204 is equivalent to the pn composition surface of red semiconductor laser diode 20.

In the semicondcutor laser unit 500 of above-mentioned first execution mode, also the semiconductor Laser device (below be called the infrared semiconductor laser element) that penetrates near infrared laser (wavelength be 790nm) can be used as second semiconductor Laser device.At this moment, shown in the bracket of Fig. 2, Fig. 4 and Fig. 5, the p side liner electrode of bonding infrared semiconductor laser element 30 on the n of bluish violet semiconductor Laser device 10 side liner electrode 10b.

(5) structure detail of infrared semiconductor laser element

According to Fig. 9, in the explanation manufacture method, the structure detail of infrared semiconductor laser element 30 is described.

Fig. 9 is the pattern sectional view of the structure detail of explanation infrared semiconductor laser element 30.When making infrared semiconductor laser element 30, on n-GaAs substrate 5X, form semiconductor layer with laminated structure.Si mixes in this n-GaAs substrate 5X.

Shown in Fig. 9 (a), on n-GaAs substrate 5X, as the semiconductor layer with laminated structure, order forms n-GaAs layer 301, n-AlGaAs covering 302, not doped with Al GaAs optical waveguide layer 303, MQW (multiple quantum trap family) active layer 304, not doped with Al GaAs optical waveguide layer 305, p-AlGaAs first covering 306, p-AlGaAs etching stopping layer 307, p-AlGaAs second covering 308 and p-GaAs contact layer 309.The formation of these each layers is for example undertaken by mocvd method (MOCVD method).

Shown in Fig. 9 (b), MQW active layer 304 has two doped with Al GaAs barrier layer 304a and three structures of the mutual lamination of doped with Al GaAs well family layer 304b not.

Here, for example the Al of n-AlGaAs covering 302 consists of 0.45, and Ga consists of 0.55.To n-GaAs layer 301 and n-AlGaAs covering 302 doping Si.

The Al of doped with Al GaAs optical waveguide layer 303 does not consist of 0.35, and Ga consists of 0.65.In addition, the Al of doped with Al GaAs barrier layer 304a does not consist of 0.35, and Ga consists of 0.65.The Al of doped with Al GaAs well family layer 304b does not consist of 0.10, and Ga consists of 0.90.The Al of doped with Al GaAs optical waveguide layer 305 does not consist of 0.35, and Ga consists of 0.65.

And the Al of p-AlGaAs first covering 306 consists of 0.45, and Ga consists of 0.55.The Al of p-AlGaAs etching stopping layer 307 consists of 0.70, and Ga consists of 0.30.

The Al of p-AlGaAs second covering 308 consists of 0.45, and Ga consists of 0.55.

Doping of Zn in p-AlGaAs first covering 306, p-AlGaAs etching stopping layer 307, p-AlGaAs second covering 308 and p-GaAs contact layer 309.

In above-mentioned, only in the part (central portion) of p-AlGaAs etching stopping layer 307, carry out on p-AlGaAs etching stopping layer 307, forming p-AlGaAs second covering 308.In addition, on p-AlGaAs second covering 308, form p-GaAs contact layer 309.

Thus, utilize that p-AlGaAs second covering 308 and p-GaAs contact layer 309 form the banded protrusion Ri that extends along directions X in the above-mentioned semiconductor layer.The protrusion Ri that p-AlGaAs second covering 308 and p-GaAs contact layer 309 constitute has the width of about 2.8 μ m.

On p-AlGaAs etching stopping layer 307, in the side of the side of p-AlGaAs second covering 308 and p-GaAs contact layer 309, lamination also forms selectively and is about the first electric current barrier layer 30c and the thickness that 0.5 μ m constitutes by thickness and is about the second electric current barrier layer 30d that 0.3 μ m constitutes.In addition, utilize sputtering method, vacuum deposition method or electron beam deposition method to form the p side liner electrode 30a that Cr/Au constitutes, be exposed to covering outside p-GaAs contact layer 309 the top and second electric current barrier layer 30d above.

In addition, the first electric current barrier layer 30c is made of doped with Al GaAs not, as the transition zone effect.The second electric current barrier layer 20d is made of n-GaAs.The Al of the first electric current barrier layer 30c consists of 0.65, and Ga consists of 0.35.

Like this, the one side side at n-GaAs substrate 5X forms the semiconductor layer with laminated structure.And, form the n side liner electrode 30b that constitutes by AuGe/Ni/Au in the another side side of n-GaAs substrate 5X.

In this infrared semiconductor laser element 30, the position of the MQW active layer 304 below protrusion Ri forms the infraluminescence point.In addition, MQW active layer 304 is equivalent to the pn composition surface of infrared semiconductor laser element 30.

Even if using under the situation of infrared semiconductor laser element 30 that penetrates near infrared laser (wavelength as 790nm) as second semiconductor Laser device, also can be set at by the thickness t 32 with insulating barrier 32 more than the 0.23 μ m, making the capacitance that produces in the insulating barrier 32 is below the capacitance that produces among the first electric current barrier layer 30c of red semiconductor laser diode 30.

Thus, can obtain effect the same when using red semiconductor laser diode 20 as second semiconductor Laser device.

(6) other configuration example and the effect thereof of semicondcutor laser unit

In addition, in the semicondcutor laser unit 500 of first execution mode, also the thickness t 32 of insulating barrier 32 can be set at more than the 0.46 μ m, the capacitance that produces in the insulating barrier 32 be made as the about below 1/2 of the capacitance that produces among the first electric current barrier layer 20c, the 30c of red semiconductor laser diode 20 or infrared semiconductor laser element 30.

The capacitance that in insulating barrier 32, produces be the capacitance that produces among the first electric current barrier layer 20c, the 30c about 1/2 when following red semiconductor laser diode 20 and the cut-off frequency of infrared semiconductor laser element 30, about two one-tenth of the declines at most of the cut-off frequency when never insulating barrier 32 being set.

Like this, by setting the thickness of insulating barrier 32, making in the insulating barrier 32 capacitance that produces is the about below 1/2 of the capacitance that produces among the first electric current barrier layer 20c, the 30c, the cut-off frequency of red semiconductor laser diode 20 that the influence of insulating barrier 32 causes and infrared semiconductor laser element 30 is descended become littler.That is, further fully suppressing the red semiconductor laser diode 20 that the influence because of insulating barrier 32 causes and the high frequency characteristics of infrared semiconductor laser element 30 worsens.

In addition, in the semicondcutor laser unit 500 of first execution mode, also the thickness t 32 of insulating barrier 32 can be set at more than the 1.20 μ m, the capacitance that produces in the insulating barrier 32 be made as the about below 1/5 of the capacitance that produces among the first electric current barrier layer 20c, the 30c of red semiconductor laser diode 20 or infrared semiconductor laser element 30.

The capacitance that produces in the insulating barrier 32 be the capacitance that produces among the first electric current barrier layer 20c, the 30c about 1/5 when following red semiconductor laser diode 20 and the cut-off frequency of infrared semiconductor laser element 30, about one one-tenth of the declines at most of the cut-off frequency when never insulating barrier 32 being set.

Usually, the cut-off frequency of red semiconductor laser diode 20 and infrared semiconductor laser element 30 changes in about one one-tenth scope because of configuration variance of semiconductor Laser device etc.Therefore, stopped to about one one-tenth, then can be ignored the deterioration of cut-off frequency basically if the cut-off frequency of red semiconductor laser diode 20 and infrared semiconductor laser element 30 descends.

Like this, by setting the thickness of insulating barrier 32, making in the insulating barrier 32 capacitance that produces is the about below 1/5 of the capacitance that produces among the first electric current barrier layer 20c, the 30c, the cut-off frequency of red semiconductor laser diode 20 that the influence of insulating barrier 32 causes and infrared semiconductor laser element 30 is descended obviously diminish.That is, suppressing the red semiconductor laser diode 20 that the influence because of insulating barrier 32 causes and the high frequency characteristics of infrared semiconductor laser element 30 very fully worsens.

In the first embodiment, the capacitance that produces in insulating barrier 32 is for below the capacitance that produces in the first electric current barrier layer 20c.In addition, the n side liner electrode 20b of the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is electrically connected.Thus, can become in the control of the driving voltage of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 and be easy to simultaneously, fully suppress the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of the layer of insulating properties causes.

(7) other effect of semicondcutor laser unit

By the wafer that forms a plurality of bluish violet semiconductor Laser devices 10 is overlapped with the wafer that forms a plurality of red semiconductor laser diodes 20, can make a plurality of semicondcutor laser units 500 simultaneously.At this moment, each bluish violet semiconductor Laser device 10 improves with the positional precision of each red semiconductor laser diode 20.As a result, the luminous point positioning accuracy of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 improves.

In addition, by between support component 5 and bluish violet semiconductor Laser device 10, auxiliary substrate 31 being set, can adjust the luminous point position of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

Be used as first semiconductor Laser device by the bluish violet semiconductor Laser device 10 that will comprise nitride-based semiconductor, improve the exothermicity of bluish violet semiconductor Laser device 10.In addition because on bluish violet semiconductor Laser device 10 lamination red semiconductor laser diode 20, so the exothermicity of red semiconductor laser diode 20 also improves.

The heat that bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 produce discharges from support component 5.In the first embodiment, bluish violet semiconductor Laser device 10 is set on support component 5, makes p side liner electrode 10a be positioned at support component 5 sides.Thus, the luminous point of bluish violet semiconductor Laser device 10 is near support component 5.As a result, the exothermicity of bluish violet semiconductor Laser device 10 improves.

Red semiconductor laser diode 20 is configured to p side liner electrode 20a and constitutes support component 5 sides.Thus, because the luminous point of red semiconductor laser diode 20 is near support component 5, so exothermicity improves.

In above-mentioned, lamination is as the red semiconductor laser diode 20 of second semiconductor Laser device on as the bluish violet semiconductor Laser device 10 of first semiconductor Laser device.But, also can on bluish violet semiconductor Laser device 10, along the Y direction a plurality of semiconductor Laser devices be set simultaneously, and be not only a semiconductor Laser device.At this moment, the laser species (wavelength) and the quantity that penetrate from semicondcutor laser unit 500 are increased.

In addition, in above-mentioned, the n side liner electrode 20b of the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is connected on the support component 5.But, also can electric insulation n side liner electrode 10b, 20b and support component 5.

At this moment, can realize the unsteady line of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.Thus, can be to applying free voltage with the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20, the power pin that 20b is electrically connected.As a result, the control of the driving voltage of the bluish violet semiconductor Laser device 10 of the drive unit of based semiconductor laser aid 500 and red semiconductor laser diode 20 becomes easy.

(8) corresponding relation of each inscape of claim and each one of execution mode

In first execution mode, support component 5 is equivalent to support component, and insulating barrier 32 is equivalent to insulating barrier, and conductive layer 32a is equivalent to conductive layer.

In addition, n-GaN substrate 1s is equivalent to first substrate, semiconductor layer on the n-GaN substrate 1s is equivalent to first semiconductor layer, p side liner electrode 10a is equivalent to side's electrode of first, n side liner electrode 10b is equivalent to the opposing party's electrode of first, bluish violet color laser is equivalent to first wavelength light, and bluish violet semiconductor Laser device 10 is equivalent to first semiconductor Laser device.

And, n-GaAs substrate 5X is equivalent to second substrate, semiconductor layer on the n-GaAs substrate 5X is equivalent to second semiconductor layer, p side liner electrode 20a and p side liner electrode 30a are equivalent to side's electrode of second, n side liner electrode 20b and n side liner electrode 30b are equivalent to the opposing party's electrode of second, red laser and infrared laser are equivalent to second wavelength light, red semiconductor laser diode 20 and infrared semiconductor laser element 30 are equivalent to second semiconductor Laser device, and the first electric current barrier layer 20c and the first electric current barrier layer 30c are equivalent to current blocking layer.

2. second execution mode

(1) formation of semicondcutor laser unit and line

The semicondcutor laser unit of second execution mode is in the following areas with the formation of the semicondcutor laser unit 500 of first execution mode and move different.

Figure 10 is the pattern front elevation that the state behind the lid 4 of semicondcutor laser unit of second execution mode is taken off in expression, and Figure 11 schemes above the pattern of the state behind the lid 4 of the expression semicondcutor laser unit that takes off second execution mode.

As shown in figure 10, with package main body 3 incorporate conductivity support components 5 on, what form conductivity is melting a layer H.

Melting on the layer H, bonding bluish violet semiconductor Laser device 10 makes n side liner electrode 10b constitute support component 5 sides.

On the p of bluish violet semiconductor Laser device 10 side liner electrode 10a, be provided with by SiO ₂ The insulating barrier 32 that (silica) constitutes.In second execution mode, also the thickness with this insulating barrier 32 is made as t32.The details of the thickness t 32 of insulating barrier 32 as described later.

On insulating barrier 32, form the conductive layer 32a that comprises Au.On conductive layer 32a, layer bonding red semiconductor laser diode 20 of H that melting via the AuSn formation makes p side liner electrode 20a constitute support component 5 sides.

Shown in the bracket of Figure 10, also can on bluish violet semiconductor Laser device 10, replace red semiconductor laser diode 20 by lamination infrared semiconductor laser element 30.In addition, have under the situation of infrared semiconductor laser element 30, infrared semiconductor laser element 30 is set, make p side liner electrode 30a constitute support component 5 sides in lamination on the bluish violet semiconductor Laser device 10.

As shown in Figure 10 and Figure 11, power pin 1a, 1b utilize dead ring 1z and package main body 3 electric insulations respectively.Power pin 1a is electrically connected through the p side liner electrode 10a of lead-in wire W3 and bluish violet semiconductor Laser device 10.The conductive layer 32a of power pin 1b on lead-in wire W1 and insulating barrier 32 is electrically connected.The n side liner electrode 20b of the top and red semiconductor laser diode 20 that exposes of support component 5 utilizes lead-in wire W2 to be electrically connected.

The n side liner electrode 10b of bluish violet semiconductor Laser device 10 is electrically connected through melting layer H on support component 5.Thus, power pin 2 is electrically connected with the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and the n side liner electrode 20b of red semiconductor laser diode 20.That is, realize the common cathode line of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

By to applying voltage between the power pin 1a, 2 and between the power pin 1b, 2 respectively, but individual drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.The electric wiring of the semicondcutor laser unit 500 of second execution mode is the same with Fig. 4.Therefore, the control of the driving voltage of each semiconductor Laser device also becomes easy in the semicondcutor laser unit 500 of second execution mode.

(2) insulating barrier is as dielectric effect and effect thereof

Utilize alternating voltage to drive under the situation of semicondcutor laser unit 500 of second execution mode, the insulating barrier 32 of Figure 10 is the same with first execution mode, as dielectric.

Figure 12 is used to illustrate the equivalent circuit diagram of the insulating barrier 32 of Figure 10 as dielectric effect.

Equivalent circuit diagram when Figure 12 (a) expression drives bluish violet semiconductor Laser device 10, the equivalent circuit diagram when Figure 12 (b) expression drives red semiconductor laser diode 20.

Utilizing alternating voltage to drive under the situation of bluish violet semiconductor Laser device 10, bluish violet semiconductor Laser device 10 is shown in Figure 12 (a), and Ri is made as resistance with protrusion, and 10c is expressed as dielectric with the electric current barrier layer.In addition, red semiconductor laser diode 20 is shown in Figure 12 (a), and Ri is made as resistance with protrusion, and the first electric current barrier layer 20c is expressed as dielectric, and the pn composition surface is expressed as dielectric.And the same with first execution mode, insulating barrier 32 is as dielectric.

Like this, when utilizing alternating voltage to drive bluish violet semiconductor Laser device 10, insulating barrier 32 is connected in parallel on the bluish violet semiconductor Laser device 10 with the series circuit of red semiconductor laser diode 20.

On the other hand, utilizing alternating voltage to drive under the situation of red semiconductor laser diode 20, red semiconductor laser diode 20 is shown in Figure 12 (b), and Ri is made as resistance with protrusion, and the first electric current barrier layer 20c is expressed as dielectric.

In addition, bluish violet semiconductor Laser device 10 is shown in Figure 12 (b), and Ri is made as resistance with protrusion, and 10c is expressed as dielectric with the electric current barrier layer, and the pn composition surface is expressed as dielectric.At this moment, insulating barrier 32 is also as dielectric.

Shown in Figure 12 (a) and (b), when driving a semiconductor Laser device, be connected in series another electric current barrier layer and pn composition surface with insulating barrier 32.Thus, reduced based on the electric current barrier layer of insulating barrier 32 and another semiconductor Laser device and the combined capacity value on pn composition surface.As a result, reduce by 32 pairs of influences that semiconductor Laser device causes of insulating barrier.

In addition, as illustrating in first execution mode, when bluish violet semiconductor Laser device 10 drove, the capacitance that produces among the electric current barrier layer 10c was about 15pF.Thus, when bluish violet semiconductor Laser device 10 drives, preferably the capacitance that produces in the insulating barrier 32 is made as below about 15pF.At this moment, the high frequency characteristics that fully suppresses the bluish violet semiconductor Laser device 10 that the influence because of the layer 32 of insulating properties causes worsens.

In addition, when red semiconductor laser diode 20 drove, the capacitance that produces among the first electric current barrier layer 20c was about 28pF.Thus, when red semiconductor laser diode 20 drives, preferably the capacitance that produces in the insulating barrier 32 is made as below about 28pF.At this moment, the high frequency characteristics that fully suppresses the red semiconductor laser diode 20 that the influence because of the layer 32 of insulating properties causes worsens.

As mentioned above, be made as below about 15pF, can fully suppress bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 high frequency characteristics deterioration separately that the influence because of the layer 32 of insulating properties causes by the capacitance that will be in the insulating barrier 32 produces.

Therefore, in second execution mode, set the thickness t 32 of insulating barrier 32, make the capacitance that in insulating barrier 32, produces for below the capacitance that in electric current barrier layer 10c, 20c, produces.

According to Fig. 6, be about below the 15pF in order to make the capacitance that produces in the insulating barrier 32, the thickness t 32 of insulating barrier 32 need be set at more than the 0.43 μ m.

Be set at more than the 0.43 μ m by the thickness t 32 with insulating barrier 32, can make the capacitance that produces in the insulating barrier 32 is below the capacitance that produces among electric current barrier layer 10c, the 20c of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

The actual effect capacitance of this moment is below the twice of the capacitance that produces among electric current barrier layer 10c, the 20c.The result, the capacitance that in insulating barrier 32, produces be the capacitance that produces among electric current barrier layer 10c, the 20c when following bluish violet semiconductor Laser device 10 and the cut-off frequency of red semiconductor laser diode 20, the cut-off frequency when never insulating barrier 32 being set descends about 3 one-tenth at most.

Like this, by setting the thickness of insulating barrier 32, making in the insulating barrier 32 capacitance that produces is below the capacitance that produces among electric current barrier layer 10c, the 20c, the cut-off frequency of bluish violet semiconductor Laser device 10 that the influence because of insulating barrier 32 causes and red semiconductor laser diode 20 is descended become enough little.That is, all fully suppress the deterioration of the high frequency characteristics of bluish violet semiconductor Laser device 10 that the influence because of insulating barrier 32 causes and red semiconductor laser diode 20.

In addition, also the thickness t 32 of insulating barrier 32 can be set at more than the 0.86 μ m, can make in insulating barrier 32 about below 1/2 for the capacitance that produces among the electric current barrier layer 10c at bluish violet semiconductor Laser device 10 of the capacitance that produces.

The capacitance that produces in insulating barrier 32 is about 1/2 the cut-off frequency of bluish violet semiconductor Laser device 10 when following of the capacitance that produces in electric current barrier layer 10c, the about twenty percent that descends at most of the cut-off frequency when never insulating barrier 32 being set.

Like this, by setting the thickness of insulating barrier 32, making in the insulating barrier 32 capacitance that produces is the about below 1/2 of the capacitance that produces among the electric current barrier layer 10c, the cut-off frequency of the bluish violet semiconductor Laser device 10 that the influence because of insulating barrier 32 causes is descended become littler.That is, the high frequency characteristics that further fully suppresses the bluish violet semiconductor Laser device 10 that the influence because of insulating barrier 32 causes worsens.

And for bluish violet semiconductor Laser device 10, the capacitance that produces among the first electric current barrier layer 20c of red semiconductor laser diode 20 is bigger than electric current barrier layer 10c.Therefore, the cut-off frequency of the red semiconductor laser diode 20 that causes because of the influence of insulating barrier 32 descends and also becomes littler.That is, further fully suppress the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of insulating barrier 32 causes.

In addition, also the thickness t 32 of insulating barrier 32 can be set at more than the 1.20 μ m, the capacitance that produces in the insulating barrier 32 be made as the about below 1/5 of the capacitance that produces among the electric current barrier layer 10c of bluish violet semiconductor Laser device 10.

The capacitance that produces in the insulating barrier 32 is about 1/5 the cut-off frequency of bluish violet semiconductor Laser device 10 when following of the capacitance that produces among the first electric current barrier layer 20c, the 30c, about one one-tenth of the declines at most of the cut-off frequency when never insulating barrier 32 being set.

Like this, by setting the thickness of insulating barrier 32, making the actual effect capacitance is the about below 1/5 of the capacitance that produces among the electric current barrier layer 10c, the cut-off frequency of the bluish violet semiconductor Laser device 10 that the influence because of insulating barrier 32 causes is descended obviously diminish.That is, the high frequency characteristics that suppresses the bluish violet semiconductor Laser device 10 that the influence because of insulating barrier 32 causes very fully worsens.

And for bluish violet semiconductor Laser device 10, the capacitance that produces among the first electric current barrier layer 20c of red semiconductor laser diode 20 is bigger than electric current barrier layer 10c.Therefore, the cut-off frequency of the red semiconductor laser diode 20 that causes of the influence of insulating barrier 32 descends and also obviously diminishes.Basically can ignore.That is, the high frequency characteristics that reduces the red semiconductor laser diode 20 that the influence because of insulating barrier 32 causes very fully worsens.

Also the thickness t 32 of insulating barrier 32 can be set at more than the 0.65 μ m.According to Fig. 6, be set at more than the 0.65 μ m by thickness t 32 insulating barrier 32, can make the capacitance that produces in the insulating barrier 32 is below the 10pF.The actual effect capacitance of the bluish violet semiconductor Laser device 10 when therefore, bluish violet semiconductor Laser device 10 drives is approximately about 23～24pF.Wherein, do not consider the capacitance that produces in the pn composition surface of red semiconductor laser diode 20 here.

Usually, the inductance of bluish violet semiconductor Laser device 10 is approximately 3nH.According to above-mentioned actual effect capacitance and above-mentioned formula (2), calculate the cut-off frequency of bluish violet semiconductor Laser device 10.The capacitance that produces in insulating barrier 32 is that the cut-off frequency of bluish violet semiconductor Laser device 10 is more than the 600MHz under the situation below the 10pF.

Usually, with regard to the optical Pickup device that possesses bluish violet semiconductor Laser device 10, preferably the cut-off frequency with bluish violet semiconductor Laser device 10 is set at more than the 600MHz.

Therefore, with regard to the semicondcutor laser unit 500 of second execution mode, be set at more than the 0.65 μ m by thickness t 32, the cut-off frequency of bluish violet semiconductor Laser device 10 can be set at more than the 600MHz, when being used for optical Pickup device etc., obtain good performance insulating barrier 32.

In second execution mode, the capacitance that produces in insulating barrier 32 is below the medium and small side's of the capacitance that produces among the electric current barrier layer 10c and the first resistance barrier layer 20c the capacitance.In addition, be electrically connected the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and the n side liner electrode 20b of red semiconductor laser diode 20.Thus, can become in the control of the driving voltage of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is easy to simultaneously, fully suppresses the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of the layer of insulating properties causes.

(3) other effect of semicondcutor laser unit

By the wafer that forms a plurality of bluish violet semiconductor Laser devices 10 is overlapped with the wafer that forms a plurality of red semiconductor laser diodes 20, can make a plurality of semicondcutor laser units 500 simultaneously.At this moment, each bluish violet semiconductor Laser device 10 improves with the positional precision of each red semiconductor laser diode 20.As a result, the luminous point positioning accuracy of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 improves.

In addition, to be configured to p side liner electrode 10a relative through insulating barrier 32 with p side liner electrode 20a for bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.Thus, because the semiconductor layer of the semiconductor layer of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is approaching, so can make the luminous point of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 close mutually.Thereby, when the laser from bluish violet semiconductor Laser device 10 and 20 ejaculations of red semiconductor laser diode sees through collector lens, can suppress the aberration that lens produce.

In the semicondcutor laser unit 500 of second execution mode, between support component 5 and bluish violet semiconductor Laser device 10, auxiliary substrate 31 is not set, but can between support component 5 and bluish violet semiconductor Laser device 10, auxiliary substrate 31 be set yet.

At this moment, can utilize the thickness of auxiliary substrate 31 to adjust each luminous point position of bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30.

In addition, between support component 5 and bluish violet semiconductor Laser device 10, be provided with under the situation of auxiliary substrate 31, also can utilize auxiliary substrate 31 to come the n side liner electrode 10b and the support component 5 of electric insulation bluish violet semiconductor Laser device 10.At this moment, can realize the unsteady line of bluish violet semiconductor Laser device 10.Thus, the power pin that can be electrically connected to the n side liner electrode 10b with bluish violet semiconductor Laser device 10 applies free voltage.As a result, the control of the driving voltage of the bluish violet semiconductor Laser device 10 of the drive unit of based semiconductor laser aid 500 and red semiconductor laser diode 20 becomes easy.

(4) corresponding relation of each inscape of claim and each one of execution mode

In second execution mode, electric current barrier layer 10c is equivalent to first current blocking layer, and the first electric current barrier layer 20c, 30c are equivalent to second current blocking layer.

3. the 3rd execution mode

(1) formation of semicondcutor laser unit and line

The semicondcutor laser unit of the 3rd execution mode is in the following areas with the formation of the semicondcutor laser unit 500 of second execution mode and move different.

Figure 13 is the pattern front elevation that the state behind the lid 4 of semicondcutor laser unit of the 3rd execution mode is taken off in expression, and Figure 14 schemes above the pattern of the state behind the lid 4 of the expression semicondcutor laser unit that takes off the 3rd execution mode.

As shown in figure 13, with package main body 3 incorporate conductivity support components 5 on, what form conductivity is melting a layer H.Melting on the layer H, bonding bluish violet semiconductor Laser device 10 makes n side liner electrode 10b constitute support component 5 sides.

In the 3rd execution mode, width of bluish violet semiconductor Laser device 10 (Y direction) and length (directions X) are bigger than the bluish violet semiconductor Laser device 10 of first execution mode.

The p side liner electrode 10a of bluish violet semiconductor Laser device 10 is formed in the subregion of the electric current barrier layer 10c that is formed in the semiconductor layer.Thus, electric current barrier layer 10c makes under p side liner electrode 10a and the electric current that flows in the bluish violet semiconductor Laser device 10 narrows down.That is, under p side liner electrode 10a, form protrusion Ri.As mentioned above, electric current barrier layer 10c is by SiO ₂Constitute.

In the XY plane, with p side liner electrode 10a state at interval under, in other zone of electric current barrier layer 10c, form the conductive layer 33 that comprises Au.The formation zone of the conductive layer in the XY plane 33 is called conductive layer forms the zone.

On conductive layer 33, via layer bonding red semiconductor laser diode 20 of H that melting of AuSn formation, so that p side liner electrode 20a constitutes support component 5 sides.

Shown in the bracket of Figure 13, also can on bluish violet semiconductor Laser device 10, replace red semiconductor laser diode 20 by lamination infrared semiconductor laser element 30.

As Figure 13 and shown in Figure 14, power pin 1a, 1b utilize dead ring 1z and package main body 3 electric insulations respectively.Power pin 1a is electrically connected through the p side liner electrode 10a of lead-in wire W3 and bluish violet semiconductor Laser device 10.Power pin 1b is electrically connected through lead-in wire W1 and conductive layer 33.The n side liner electrode 20b of the top and red semiconductor laser diode 20 that exposes of support component 5 utilizes lead-in wire W2 to be electrically connected.

The n side liner electrode 10b of bluish violet semiconductor Laser device 10 is electrically connected through melting layer H on support component 5.Thus, power pin 2 is electrically connected with the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and the n side liner electrode 20b of red semiconductor laser diode 20.That is, realize the common cathode line of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

By to applying voltage between the power pin 1a, 2 and between the power pin 1b, 2 respectively, but individual drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

The electric wiring of the semicondcutor laser unit 500 of the 3rd execution mode is the same with Fig. 4.Therefore, the control of the driving voltage of each semiconductor Laser device also becomes easy in the semicondcutor laser unit 500 of the 3rd execution mode.

(2) the electric current barrier layer is as dielectric effect and effect thereof

Here, in the 3rd execution mode, when utilizing alternating voltage to drive red semiconductor laser diode 20, conductive layer forms the electric current barrier layer 10c in zone as dielectric.Therefore, in the 3rd execution mode, it is below the capacitance that produces among the first electric current barrier layer 20c that best conductive layer forms the capacitance that produces among the electric current barrier layer 10c in zone.

Shown in first execution mode, be under the situation of 0.5 μ m, 200 μ m and 600 μ m in thickness, width and the length of the first electric current barrier layer 20c, the capacitance that produces in the first electric current barrier layer 20c is approximately 28pF.

Here, to form the insulating barrier 32 (conductive layer 32a) that illustrates in area and first execution mode in zone identical for the conductive layer in the XY plane.That is, the width (Y direction) that conductive layer forms the zone is approximately 300 μ m, and length (directions X) is approximately 600 μ m.

Therefore, forming at conductive layer in order to make that the capacitance that produces is made as below about 28pF among the electric current barrier layer 10c in zone, need be more than the 0.23 μ m with the thickness setting of electric current barrier layer 10c according to Fig. 6.

Like this, be more than the 0.23 μ m by thickness setting with electric current barrier layer 10c, can make the capacitance that produces among the electric current barrier layer 10c is below the capacitance that produces among the first electric current barrier layer 20c of red semiconductor laser diode 20.

The actual effect capacitance of this moment is below the twice of the capacitance that produces among the first electric current barrier layer 20c.As a result, the capacitance that produces in electric current barrier layer 10c is the cut-off frequency of the capacitance that the produces red semiconductor laser diode 20 when following in the first electric current barrier layer 20c, and the cut-off frequency when electric current barrier layer 10c never is set descends about three one-tenth at most.

Like this, by setting the thickness of electric current barrier layer 10c, making the capacitance that produces in electric current barrier layer 10c is below the capacitance that produces among the first electric current barrier layer 20c, the cut-off frequency of the red semiconductor laser diode 20 that the influence because of electric current barrier layer 10c causes is descended become enough little.That is, all fully suppress the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of electric current barrier layer 10c causes.

Wherein, also can be more than the 0.46 μ m with the thickness setting of electric current barrier layer 10c, can make about below 1/2 for the capacitance that produces among the first electric current barrier layer 20c at red semiconductor laser diode 20 of the capacitance that in electric current barrier layer 10c, produces.

The capacitance that produces in electric current barrier layer 10c is about 1/2 the cut-off frequency of red semiconductor laser diode 20 when following of the capacitance that produces in the first electric current barrier layer 20c, the cut-off frequency when never insulating barrier 32 being set is the about twenty percents of declines at most.

Like this, by setting the thickness of electric current barrier layer 10c, make about below 1/2 for the capacitance that in the first electric current barrier layer 20c, produces of the capacitance that in electric current barrier layer 10c, produces, the cut-off frequency of the red semiconductor laser diode 20 that the influence because of electric current barrier layer 10c causes is descended become littler.That is, further fully suppress the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of electric current barrier layer 10c causes.

In addition, also can be more than the 1.20 μ m with the thickness setting of electric current barrier layer 10c, the capacitance that will produce in electric current barrier layer 10c is made as the about below 1/5 of the capacitance that produces in the first electric current barrier layer 20c of red semiconductor laser diode 20.

The capacitance that produces in electric current barrier layer 10c is about 1/5 the cut-off frequency of red semiconductor laser diode 20 when following of the capacitance that produces in the first electric current barrier layer 20c, about one one-tenth of the declines at most of the cut-off frequency when electric current barrier layer 10c never is set.

Usually, the cut-off frequency of semiconductor Laser device changes in about one one-tenth scope because of configuration variance of semiconductor Laser device etc.Therefore, stopped to about one one-tenth, then can be ignored the deterioration of cut-off frequency basically if the cut-off frequency of red semiconductor laser diode 20 descends.

Like this, by setting the thickness of electric current barrier layer 10c, make about below 1/5 for the capacitance that in the first electric current barrier layer 20c, produces of the capacitance that in electric current barrier layer 10c, produces, the cut-off frequency of the red semiconductor laser diode 20 that the influence because of electric current barrier layer 10c causes is descended obviously diminish.That is, suppress the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of electric current barrier layer 10c causes very fully.

In addition, in above-mentioned, in order to be adjusted at the capacitance that produces among the electric current barrier layer 10c, be setting with the thickness setting of electric current barrier layer 10c.But, also can be adjusted at the capacitance that produces among the electric current barrier layer 10c by setting material, width (Y direction) and the length (directions X) of electric current barrier layer 10c.

In the 3rd execution mode, the capacitance that produces in electric current barrier layer 10c is for below the capacitance that produces in the first electric current barrier layer 20c.In addition, the n side liner electrode 20b of the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is electrically connected.Thus, can become in the control of the driving voltage of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is easy to simultaneously, fully suppresses the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of the layer of insulating properties causes.

(3) other effect of semicondcutor laser unit

By the wafer that forms a plurality of bluish violet semiconductor Laser devices 10 is overlapped with the wafer that forms a plurality of red semiconductor laser diodes 20, can make a plurality of semicondcutor laser units 500 simultaneously.At this moment, each bluish violet semiconductor Laser device 10 improves with the positional precision of each red semiconductor laser diode 20.As a result, the luminous point positioning accuracy of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 improves.

In addition, to be configured to p side liner electrode 10a relative with p side liner electrode 20a for bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.Thus, because the semiconductor layer of the semiconductor layer of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is approaching, so can make the luminous point of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 close mutually.Thereby, when the laser from bluish violet semiconductor Laser device 10 and 20 ejaculations of red semiconductor laser diode sees through collector lens, can suppress the aberration that lens produce.

(4) corresponding relation of each inscape of claim and each one of execution mode

In the 3rd execution mode, conductive layer 33 is equivalent to conductive layer, and electric current barrier layer 10c is equivalent to first current blocking layer, and the first electric current barrier layer 20c, 30c are equivalent to second current blocking layer.

4. the 4th execution mode

(1) formation of semicondcutor laser unit and line

The semicondcutor laser unit of the 4th execution mode is in the following areas with the formation of the semicondcutor laser unit 500 of first execution mode and move different.

Figure 15 is the stereoscopic figure of the semicondcutor laser unit of expression the 4th execution mode.

In Figure 15, the semicondcutor laser unit 500 of the 4th execution mode also possesses power pin 1c except that the semicondcutor laser unit 500 of first execution mode.

Figure 16 is the pattern front elevation that the state behind the lid 4 of semicondcutor laser unit 500 of Figure 15 is taken off in expression, and Figure 17 schemes above the pattern of the state behind the lid 4 of the expression semicondcutor laser unit 500 that takes off Figure 15.

As shown in figure 16, with package main body 3 incorporate conductivity support components 5 on, the same with the semicondcutor laser unit 500 of first execution mode, through a plurality of layer H, sequential laminating auxiliary substrate 31, bluish violet semiconductor Laser device 10, insulating barrier 32 and red semiconductor laser diodes 20 of melting.

In addition, in this example, auxiliary substrate 31 in the above and below possess conductive layer 31a, 31b.On insulating barrier 32, form conductive layer 32a.

Shown in the bracket of Figure 16, also can on bluish violet semiconductor Laser device 10, replace red semiconductor laser diode 20 by lamination infrared semiconductor laser element 30.

As Figure 16 and shown in Figure 17, power pin 1a, 1b, 1c utilize dead ring 1z and package main body 3 electric insulations respectively.

The conductive layer 31a of power pin 1a on lead-in wire W4 and auxiliary substrate 31 is electrically connected.Thus, the p side liner electrode 10a of power pin 1a and bluish violet semiconductor Laser device 10 is electrically connected.

The conductive layer 32a of power pin 1b on lead-in wire W1 and insulating barrier 32 is electrically connected.Thus, the p side liner electrode 20a of power pin 1b and red semiconductor laser diode 20 is electrically connected.

Power pin 1c is electrically connected through the n side liner electrode 10b of lead-in wire W3 and bluish violet semiconductor Laser device 10 when the n side liner electrode 20b through lead-in wire W2 and red semiconductor laser diode 20 is electrically connected.Thus, power pin 1c is as the common n side liner electrode of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.That is, realize the same cathode connection of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

Especially in the 4th execution mode, bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 respectively with conductivity support component 5 electric insulations.That is bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 state line, to float from support component 5.

By to applying voltage between power pin 1a, the 1c and between power pin 1b, the 1c respectively, but individual drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

(2) effect of semicondcutor laser unit

Figure 18 is the circuit diagram of electric wiring of the semicondcutor laser unit 500 of expression the 4th execution mode.

As mentioned above, bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 all with conductivity support component 5 electric insulations.At this moment, can apply voltage arbitrarily to power pin 1c.

For example, when red semiconductor laser diode 20 drove, 1c applied earthing potential to power pin, applies the voltage higher than earthing potential to power pin 1a.On the other hand, when the driving voltage bluish violet semiconductor Laser devices 10 higher than red semiconductor laser diode 20 drove, 1c applied negative voltage to power pin, applied voltage identical when driving with red semiconductor laser diode 20 to power pin 1a.

Like this, bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 and conductivity support component 5 electric insulations.In addition, because can be to applying free voltage, so the control of the driving voltage of each semiconductor Laser device becomes easy with the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20, the power pin 1a that 20b is electrically connected.

In the 4th execution mode, when the n side liner electrode 20b of the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is electrically connected each other, with conductivity support component 5 electric insulations.At this moment, can apply voltage to the n side liner electrode 20b of the n of bluish violet semiconductor Laser device 10 side liner electrode 10b and red semiconductor laser diode 20 respectively.

5. the 5th execution mode

(1) formation of semicondcutor laser unit and line

The semicondcutor laser unit of the 5th execution mode is in the following areas with the formation of the semicondcutor laser unit 500 of first execution mode and move different.The outward appearance of the semicondcutor laser unit of the 5th execution mode is identical with the semicondcutor laser unit of Figure 15 500, and is the same with the 4th execution mode, except that the semicondcutor laser unit 500 of first execution mode, also possesses power pin 1c.

Figure 19 is the pattern front elevation that the state behind the lid 4 of semicondcutor laser unit of the 5th execution mode is taken off in expression, and Figure 20 schemes above the pattern of the state behind the lid 4 of the expression semicondcutor laser unit that takes off the 5th execution mode.

With package main body 3 incorporate conductivity support components 5 on, the same with the semicondcutor laser unit 500 of first execution mode, through a plurality of melting the layer H, sequential laminating auxiliary substrate 31 and bluish violet semiconductor Laser devices 10.In the 5th execution mode, auxiliary substrate 31 also possesses conductive layer 31a, 31b with following in the above.

In the subregion on the n of bluish violet semiconductor Laser device 10 side liner electrode 10b (below be called first insulating regions), be provided with by SiO ₂ The insulating barrier 34 that constitutes.In the following description, the thickness with this insulating barrier 34 is made as t34.The details of the thickness t 34 of insulating barrier 34 as described later.On insulating barrier 34, form the conductive layer 34a that comprises Au.

And, in the subregion on the n side liner electrode 10b of the bluish violet semiconductor Laser device 10 of removing first insulating regions (below be called second insulating regions), be provided with by SiO ₂ The insulating barrier 35 that constitutes.In the following description, the thickness with this insulating barrier 35 is made as t35.The details of the thickness t 35 of insulating barrier 35 as described later.On insulating barrier 35, form the conductive layer 35a that comprises Au.

Above-mentioned first insulating regions and second insulating regions be each interval on n side liner electrode 10b.Therefore, conductive layer 34a, the 35a electric insulation on the insulating barrier 34,35.

On conductive layer 34a,, make p side liner electrode 20a constitute support component 5 sides through melting the bonding red semiconductor laser diode 20 of layer H.On conductive layer 35a,, make p side liner electrode 30a constitute support component 5 sides through melting the bonding infrared semiconductor laser element 30 of layer H.

Here, in the 5th execution mode, bluish violet semiconductor Laser device 10 has the width (Y direction) of about 700 μ m, and has the length (directions X) of about 600 μ m.Red semiconductor laser diode 20 has the width (Y direction) of about 200 μ m, and has the length (directions X) of about 600 μ m.Infrared semiconductor laser element 30 has the width (Y direction) of about 200 μ m, and has the length (directions X) of about 600 μ m.

And insulating barrier 34,35 is the same with the insulating barrier 32 of first execution mode, has the width (Y direction) of about 300 μ m, and has the length (directions X) of about 600 μ m.

As Figure 19 and shown in Figure 20, power pin 1a, 1b, 1c utilize dead ring 1z and package main body 3 electric insulations respectively.

The conductive layer 31a of power pin 1a on lead-in wire W6 and auxiliary substrate 31 is electrically connected.Thus, the p side liner electrode 10a of power pin 1a and bluish violet semiconductor Laser device 10 is electrically connected.

The conductive layer 34a of power pin 1b on lead-in wire W1 and insulating barrier 34 is electrically connected.Thus, the p side liner electrode 20a of power pin 1b and red semiconductor laser diode 20 is electrically connected.

The conductive layer 35a of power pin 1c on lead-in wire W4 and insulating barrier 35 is electrically connected.Thus, the p side liner electrode 30a of power pin 1b and infrared semiconductor laser element 30 is electrically connected.

The top n side liner electrode 10b with bluish violet semiconductor Laser device 10 that exposes of support component 5 is electrically connected by lead-in wire W2, the top n side liner electrode 20b with red semiconductor laser diode 20 that exposes of support component 5 is electrically connected by lead-in wire W3, and the top n side liner electrode 30b with infrared semiconductor laser element 30 that exposes of support component 5 is electrically connected by the W5 that goes between.

Thus, power pin 2 is electrically connected with n side liner electrode 10b, the n side liner electrode 20b of red semiconductor laser diode 20 of bluish violet semiconductor Laser device 10 and the n side liner electrode 30b of infrared semiconductor laser element 30.That is, realize the common cathode line of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

By between the power pin 1a, 2, apply voltage respectively between the power pin 1b, 2 and between the power pin 1c, 2, but individual drive bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30.

Figure 21 is the circuit diagram of electric wiring of the semicondcutor laser unit 500 of expression the 5th execution mode.

As mentioned above, when power pin 2 is electrically connected with support component 5, be electrically connected with the n side liner electrode 10b of bluish violet semiconductor Laser device 10, the n side liner electrode 20b of red semiconductor laser diode 20 and the n side liner electrode 30b of infrared semiconductor laser element 30.

On the other hand, the p side liner electrode 30a and the support component 5 of the p side liner electrode 20a of the p side liner electrode 10a of bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30, be power pin 2 electric insulations.

Thus, in order to drive bluish violet semiconductor Laser device 10,, need apply the voltage higher to power pin 1a than earthing potential for power pin 2.In addition, in order to drive red semiconductor laser diode 20,, need apply the voltage higher to power pin 1b than earthing potential for power pin 2.And,,, need apply the voltage higher to power pin 1c than earthing potential for power pin 2 in order to drive infrared semiconductor laser element 30.

Like this, with regard to the semicondcutor laser unit 500 of the 5th execution mode, by applying the voltage higher to one of power pin 1a, 1b, 1c than earthing potential, but individual drive bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30.As a result, the control of the driving voltage of each semiconductor Laser device becomes easy.

(2) auxiliary substrate and insulating barrier are as dielectric effect and effect thereof

In the 5th execution mode, when utilizing alternating voltage to drive bluish violet semiconductor Laser device 10, auxiliary substrate 31 is as dielectric.But the same with first execution mode, the thickness of auxiliary substrate 31 is approximately 200 μ m, compares with the 0.5 μ m of electric current barrier layer 10c, and is obviously big.Therefore, the influence that causes of 31 pairs of bluish violet semiconductor Laser devices 10 of auxiliary substrate can be ignored basically.

On the other hand, when utilizing alternating voltage to drive red semiconductor laser diode 20, insulating barrier 34 is as dielectric.In the 5th execution mode, the shape of the first electric current barrier layer 20c that illustrates in the shape of the first electric current barrier layer 20c and first execution mode is identical.In addition, the shape of the insulating barrier 32 that illustrates in the shape of insulating barrier 34 and first execution mode is identical.

Therefore, preferably the thickness t 34 with insulating barrier 34 is set at more than the 0.23 μ m, is more preferably to be set in more than the 0.46 μ m.And, be set at more than the 1.20 μ m thickness t 34 of insulating barrier 34 very good.

On the other hand, when utilizing alternating voltage to drive infrared semiconductor laser element 30, insulating barrier 35 is as dielectric.In the 5th execution mode, the shape of the first electric current barrier layer 20c that illustrates in the shape of the first electric current barrier layer 30c and first execution mode is identical.In addition, the shape of the insulating barrier 32 that illustrates in the shape of insulating barrier 35 and first execution mode is identical.

Therefore, preferably the thickness t 34 with insulating barrier 35 is set at more than the 0.23 μ m, is more preferably to be set in more than the 0.46 μ m.And, be set at more than the 1.20 μ m thickness t 35 of insulating barrier 35 very good.

In the 5th execution mode, the roughly the same situation of capacitance that produces among the first electric current barrier layer 30c of the capacitance that produces among the first electric current barrier layer 20c of red semiconductor laser diode 20 and infrared semiconductor laser element 30 is described.

But, under the situation that the capacitance that produces respectively differs widely each other, set thickness t 34, t35 respectively accordingly in the first electric current barrier layer 20c, 30c.

(3) other effect of semicondcutor laser unit

In the 5th execution mode, also can on mutually the same substrate, make red semiconductor laser diode 20 and infrared semiconductor laser element 30.At this moment, red semiconductor laser diode 20 and infrared semiconductor laser element 30 can make the emitting red light point of red semiconductor laser diode 20 and infrared semiconductor laser element 30 and the spacing accuracy of infraluminescence point obviously improve by having monolithic construction.

The semicondcutor laser unit 500 of the 5th execution mode possesses bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30.Thus, semicondcutor laser unit 500 can penetrate the laser of three kinds of wavelength.

(4) corresponding relation of each inscape of claim and each one of execution mode

In the 5th execution mode, insulating barrier 34,35 is equivalent to insulating barrier, and conductive layer 34a, 35a are equivalent to conductive layer.

6. the 6th execution mode

(1) formation of semicondcutor laser unit and line

The semicondcutor laser unit of the 6th execution mode is in the following areas with the formation of the semicondcutor laser unit 500 of the 5th execution mode and move different.The outward appearance of the semicondcutor laser unit of the 6th execution mode is the same with the 5th execution mode, and is identical with the semicondcutor laser unit 500 of Figure 15.

Figure 22 is the pattern front elevation that the state behind the lid 4 of semicondcutor laser unit of the 6th execution mode is taken off in expression, and Figure 23 schemes above the pattern of the state behind the lid 4 of the expression semicondcutor laser unit that takes off the 6th execution mode.

As shown in figure 22, with package main body 3 incorporate conductivity support components 5 on, what form conductivity is melting a layer H.Melting on the layer H, bonding bluish violet semiconductor Laser device 10 is so that n side liner electrode 10b constitutes support component 5 sides.

In the 6th execution mode, the width of bluish violet semiconductor Laser device 10 (Y direction) is approximately 800 μ m, and length (directions X) is approximately 600 μ m.

Form the p side liner electrode 10a of bluish violet semiconductor Laser device 10 in the subregion of electric current barrier layer 10c in being formed at semiconductor layer.The same with the 3rd execution mode, the protrusion Ri of formation bluish violet semiconductor Laser device 10 under p side liner electrode 10a, electric current barrier layer 10c is by SiO ₂Constitute.

In addition, in the 6th execution mode, the subregion that forms p side liner electrode 10a be in the XY plane bluish violet semiconductor Laser device 10 whole sizes about 1/4.For example, the width (Y direction) of p side liner electrode 10a is approximately 200 μ m, and length (directions X) is approximately 600 μ m.

In the XY plane, with p side liner electrode 10a state at interval under, in other zone of electric current barrier layer 10c, form the conductive layer 36,37 that comprises Au.The formation zone of the conductive layer in the XY plane 36 is called first conductive layer forms the zone.The formation zone of the conductive layer in the XY plane 37 is called second conductive layer forms the zone.On the Y direction, p side liner electrode 10a forms between the zone at first and second conductive layers.

The width of conductive layer 36,37 (Y direction) all is approximately 300 μ m, and length (directions X) all is approximately 600 μ m.

On conductive layer 36, via layer bonding red semiconductor laser diode 20 of H that melting of AuSn formation, so that p side liner electrode 20a constitutes support component 5 sides.

On conductive layer 37, via layer bonding red semiconductor laser diode 30 of H that melting of AuSn formation, so that p side liner electrode 30a constitutes support component 5 sides.

As Figure 22 and shown in Figure 23, power pin 1a, 1b, 1c utilize dead ring 1z and package main body 3 electric insulations respectively.

Power pin 1a is electrically connected through lead-in wire W5 and conductive layer 37.Thus, the p side liner electrode 30a of power pin 1a and infrared semiconductor laser element 30 is electrically connected.

Power pin 1b is electrically connected through lead-in wire W1 and conductive layer 36.Thus, the p side liner electrode 20a of power pin 1b and red semiconductor laser diode 20 is electrically connected.

Power pin 1c is electrically connected through the p side liner electrode 10a of lead-in wire W3 and bluish violet semiconductor Laser device 10.

The top n side liner electrode 20b with red semiconductor laser diode 20 that exposes of support component 5 is electrically connected by lead-in wire W2.The top n side liner electrode 30b with infrared semiconductor laser element 30 that exposes of support component 5 is electrically connected by lead-in wire W4.

In the 6th execution mode, the n side liner electrode 10b of bluish violet semiconductor Laser device 10 is electrically connected on the support component 5 through melting layer H.Thus, power pin 2 is electrically connected with n side liner electrode 10b, the n side liner electrode 20b of red semiconductor laser diode 20 of bluish violet semiconductor Laser device 10 and the n side liner electrode 30b of infrared semiconductor laser element 30.That is, realize the common cathode line of bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30.

By between the power pin 1c, 2, apply voltage respectively between the power pin 1b, 2 and between the power pin 1a, 2, but individual drive bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30.The electric wiring of the semicondcutor laser unit 500 of the 6th execution mode is identical with Figure 21.In addition, in Figure 21, the symbol of the power pin of the 6th execution mode is shown in the bracket.Like this, even if the semicondcutor laser unit 500 of the 6th execution mode, each semiconductor laser unit, 10,20,30 driving voltage control also becomes easy.

(2) the electric current barrier layer is as dielectric effect and effect thereof

When utilizing alternating voltage to drive bluish violet semiconductor Laser device 10, the subregion that forms the electric current barrier layer 10c of p side liner electrode 10a is used as dielectric.

Figure 24 is the graph of a relation of the thickness of the capacitance that produces in electric current barrier layer 10c when driving of the bluish violet semiconductor Laser device 10 of expression Figure 22 and electric current barrier layer 10c.In Figure 24, the longitudinal axis is represented capacitance, and transverse axis is represented the thickness of electric current barrier layer 10c.Like this, the capacitance that produces among the electric current barrier layer 10a of subregion is corresponding to the varied in thickness of electric current barrier layer 10c.In addition, in the 6th execution mode, the thickness of electric current barrier layer 10c changes along with the varied in thickness of the aftermentioned first electric current barrier layer 20c, 30c.

When utilizing alternating voltage to drive red semiconductor laser diode 20, first conductive layer forms the electric current barrier layer 10c in zone as dielectric.In the 6th execution mode, the shape of the first electric current barrier layer 20c that illustrates in the shape of the first electric current barrier layer 20c and first execution mode is identical.In addition, first conductive layer electric current barrier layer 10c that forms the zone has width and the length identical with conductive layer 36.

And when utilizing alternating voltage to drive infrared semiconductor laser element 30, second conductive layer forms the electric current barrier layer 10c in zone as dielectric.In the 6th execution mode, the shape of the first electric current barrier layer 30c that illustrates in the shape of the first electric current barrier layer 30c and first execution mode is identical.In addition, second conductive layer electric current barrier layer 10c that forms the zone has width and the length identical with conductive layer 37.

Therefore, according to Fig. 6, preferably the thickness setting with electric current barrier layer 10c is more than the 0.23 μ m, is more preferably to be set in more than the 0.46 μ m.And, be very good more than the 1.20 μ m with the thickness setting of electric current barrier layer 10c.

Especially under the thickness setting with electric current barrier layer 10c is situation more than the 0.23 μ m, according to Figure 24, when red semiconductor laser diode 20 and infrared semiconductor laser element 30 drove, the capacitance that produces among the electric current barrier layer 10c was approximately below the 20pF.Thus, can fully suppress the red semiconductor laser diode 20 that the influence because of electric current barrier layer 10c causes and the high frequency characteristics of infrared semiconductor laser element 30 worsens.

When bluish violet semiconductor Laser device 10 drives, because the capacitance that produces among the electric current barrier layer 10c is about below the 20pF, so the high frequency characteristics of bluish violet semiconductor Laser device 10 further improves.Especially because the cut-off frequency of bluish violet semiconductor Laser device 10 is set to more than the 600MHz, so when semicondcutor laser unit 500 being used for optical Pickup device etc., can obtain good performance.

In addition, under the thickness setting with electric current barrier layer 10c was situation more than the 0.46 μ m, when red semiconductor laser diode 20 and infrared semiconductor laser element 30 drove, the capacitance that produces among the electric current barrier layer 10c was about below the 10pF.Thus, can further fully suppress the deterioration of the high frequency characteristics of red semiconductor laser diode 20 that the influence of electric current barrier layer 10c causes and infrared semiconductor laser element 30.

And under the thickness setting with electric current barrier layer 10c was situation more than the 1.20 μ m, when red semiconductor laser diode 20 and infrared semiconductor laser element 30 drove, the capacitance that produces among the electric current barrier layer 10c was about below the 4pF.Thus, can suppress the deterioration of the high frequency characteristics of red semiconductor laser diode 20 that the influence because of electric current barrier layer 10c causes and infrared semiconductor laser element 30 very fully.

In addition, when bluish violet semiconductor Laser device 10 drives, because the capacitance that produces among the electric current barrier layer 10c is about below the 4pF, so the high frequency characteristics of bluish violet semiconductor Laser device 10 obviously improves.Thus, when semicondcutor laser unit 500 being used for optical Pickup device etc., can obtain good performance.

In the 6th execution mode, the roughly the same situation of capacitance that produces among the first electric current barrier layer 30c of the capacitance that produces among the first electric current barrier layer 20c of red semiconductor laser diode 20 and infrared semiconductor laser element 30 has been described.

But, under the poor each other too many situation of capacitance that the first resistance barrier layer 20c, 30c produce separately, also can set thickness correspondingly.

(3) other effect of semicondcutor laser unit

As mentioned above, in the semicondcutor laser unit 500 of the 6th execution mode, the p side liner electrode 10a that is configured to bluish violet semiconductor Laser device 10 is relative with p side liner electrode 20a, the 30a of red semiconductor laser diode 20 and infrared semiconductor laser element 30.

Thus, bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30 luminous point separately can be configured on the roughly the same straight line in the YZ plane.

In the 6th execution mode, also can on mutually the same substrate, make red semiconductor laser diode 20 and infrared semiconductor laser element 30.At this moment, red semiconductor laser diode 20 and infrared semiconductor laser element 30 can make the emitting red light point of red semiconductor laser diode 20 and infrared semiconductor laser element 30 and the spacing accuracy of infraluminescence point obviously improve by having monolithic construction.

(4) corresponding relation of each inscape of claim and each one of execution mode

In the 6th execution mode, conductive layer 36 and 37 is equivalent to conductive layer, and electric current barrier layer 10c is equivalent to first current blocking layer, and the first electric current barrier layer 20c and 30c are equivalent to second current blocking layer.

7. the 7th execution mode

(1) formation of semicondcutor laser unit

The semicondcutor laser unit of the 7th execution mode possesses first semiconductor Laser device and second semiconductor Laser device.The optical maser wavelength that first semiconductor Laser device penetrates is different with the optical maser wavelength that second semiconductor Laser device penetrates.

In the following description, will penetrate the semiconductor Laser device (below be called the bluish violet semiconductor Laser device) of bluish violet color laser (wavelength is about 400nm) as first semiconductor Laser device.

In addition, will penetrate the semiconductor Laser device (below be called the red semiconductor laser diode) of red laser (wavelength is about 658nm) as second semiconductor Laser device.

Figure 25 is the stereoscopic figure of the semicondcutor laser unit of expression the 7th execution mode.

In Figure 25, semicondcutor laser unit 500 possesses conductivity package main body 3, power pin 1a, 1b, 2 and lid 4.

In package main body 3, a plurality of semiconductor Laser devices of aftermentioned are set, by lid 4 sealings.In lid 4, be provided with and take out window 4a.Taking out window 4a is made of the material that sees through laser.In addition, power pin 2 mechanically with electrically is connected with package main body 3.Power pin 2 is used as earth terminal.

The details of semicondcutor laser unit 500 is described.Below, the direction that shoots out from the laser of semiconductor Laser device is illustrated as the front.

Figure 26 is the pattern front elevation that the state behind the lid 4 of semicondcutor laser unit 500 of Figure 25 is taken off in expression, and Figure 27 schemes above the pattern of the state behind the lid 4 of the expression semicondcutor laser unit 500 that takes off Figure 25.Figure 28 is the local amplification front view of Figure 26.

In the following description, as Figure 26 and shown in Figure 27, to be defined as directions X from the ejaculation direction of the laser of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20, will in face, be defined as Y direction and Z direction by mutually orthogonal both direction perpendicular to directions X.

As shown in figure 26, with package main body 3 incorporate conductivity support components 5 on, what form conductivity is melting a layer H.Support component 5 is made of conductivity and the good material of thermal conductivity, is melting layer H and is being made of AuSn (golden tin).

Melting on the layer H, above being arranged on and below possess the insulating properties auxiliary substrate 31 of conductive layer 31a, 31b.Auxiliary substrate 31 is made of AlN (aluminium nitride).The thickness of auxiliary substrate 31 for example is approximately about 200 μ m.In addition, conductive layer 31a, 31b comprise Au.

On the conductive layer 31a of auxiliary substrate 31, melting a layer H, bonding bluish violet semiconductor Laser device 10 via what AuSn constituted.

Bluish violet semiconductor Laser device 10 has the laminated structure that comprises p side liner electrode 10a, n side liner electrode 10b and electric current barrier layer 10c.Bluish violet semiconductor Laser device 10 is arranged to p side liner electrode 10a and is constituted support component 5 sides.

In Figure 26, n side liner electrode 10b is positioned at the upper face side of bluish violet semiconductor Laser device 10, and p side liner electrode 10a is positioned at the following side of bluish violet semiconductor Laser device 10.In addition, bluish violet semiconductor Laser device 10 has the protrusion Ri that extends along directions X on p side liner electrode 10a, have electric current barrier layer 10c in the both sides of protrusion Ri.The details of bluish violet semiconductor Laser device 10 as described later.

On the n of bluish violet semiconductor Laser device 10 side liner electrode 10b, be provided with by SiO ₂ The insulating barrier 32 that (silica) constitutes.On insulating barrier 32, as described later, bonding red semiconductor laser diode 20.This insulating barrier 32 in the zone and other zone of the protrusion Ri of bonding red semiconductor laser diode 20, thickness (Z direction) difference.

In the following description, will comprise the protrusion Ri of semiconductor Laser device and near the zone it is called protrusion and forms the zone.In Figure 26, with dashed lines surrounds the part that the protrusion that is arranged in red semiconductor laser diode 20 forms the insulating barrier 32 in zone.

The part that the protrusion that will be arranged in red semiconductor laser diode 20 forms the insulating barrier 32 in zone is called heat release with insulating barrier 320.In addition, will be arranged in the part of insulating barrier 32 that protrusion forms the zone beyond the zone and be called low capacitive insulation layer 321.

Protrusion form the zone part enlarged drawing as shown in figure 28.As shown in figure 28, in the following description, the thickness of low capacitive insulation layer 321 is made as t321, heat release is made as t320 with the thickness of insulating barrier 320.In addition, heat release is made as w320 with the width (Y direction) of insulating barrier 320.

The details of the width w320 of the thickness t 321 of low capacitive insulation layer 321 and heat release usefulness insulating barrier 320, t320 and heat release usefulness insulating barrier 320 as described later.

On insulating barrier 32, form the conductive layer 32a that comprises Au.On conductive layer 32a, via layer bonding red semiconductor laser diode 20 of H that melting of AuSn formation.

Red semiconductor laser diode 20 has the laminated structure that comprises p side liner electrode 20a, n side liner electrode 20b and the first electric current barrier layer 20c.Red semiconductor laser diode 20 is arranged to p side liner electrode 20a and is constituted support component 5 sides.

In Figure 26, n side liner electrode 20b is positioned at the upper face side of red semiconductor laser diode 20, and p side liner electrode 20a is positioned at the following side of red semiconductor laser diode 20.In addition, red semiconductor laser diode 20 has the protrusion Ri that extends along directions X on p side liner electrode 20a, have the first electric current barrier layer 20c in the both sides of protrusion Ri.

The protrusion Ri of red semiconductor laser diode 20 is configured in the formation zone of second insulating barrier 52.Therefore, in the present embodiment, it is consistent that the protrusion of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 forms the zone.The details of red semiconductor laser diode 20 as described later.

Be arranged to the central portion that bluish violet semiconductor Laser device 10 is positioned at the taking-up window 4a (with reference to Figure 25) of lid 4.

(2) line of semicondcutor laser unit

As Figure 26 and shown in Figure 27, power pin 1a, 1b utilize dead ring 1z and package main body 3 electric insulations respectively.Power pin 1a is electrically connected on the conductive layer 31a on the auxiliary substrate 31 through lead-in wire W4.Power pin 1b is electrically connected on the conductive layer 32a on the insulating barrier 32 through lead-in wire W1.

On the other hand, the n side liner electrode 10b of the top and bluish violet semiconductor Laser device 10 that exposes of support component 5 utilizes lead-in wire W3 to be electrically connected, and the n side liner electrode 20b of the top and red semiconductor laser diode 20 that exposes of support component 5 utilizes lead-in wire W2 to be electrically connected.Thus, power pin 2 is electrically connected with the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and the n side liner electrode 20b of red semiconductor laser diode 20.That is, realize the common cathode line of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

By to applying voltage between the power pin 1a, 2 and between the power pin 1b, 2 respectively, but individual drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.Therefore, semicondcutor laser unit 500 selectively penetrates bluish violet color laser and two kinds of laser of red laser.

(3) size of insulating barrier

As mentioned above, in insulating barrier 32, the thickness t 321 of low capacitive insulation layer 321 is different with the thickness t 320 of insulating barrier 320 with heat release.Here, best heat release has about size below 1/2 of the thickness t 321 of low capacitive insulation layer 321 with the thickness t 320 of insulating barrier 320.

With regard to semicondcutor laser unit 500, the thickness t 321 of low capacitive insulation layer 321 for example is 0.3 μ m.Therefore, heat release is preferably below the 0.15 μ m with the thickness t 320 of insulating barrier 320.In the present embodiment, for example heat release is set at 0.05 μ m with the thickness t 320 of insulating barrier 320.

In addition, heat release preferably has about size below 1/10 of bluish violet semiconductor Laser device 10 whole width with the above size of twice that the width w320 of insulating barrier 320 preferably has the width of the protrusion Ri that is approximately red semiconductor laser diode 20.

With regard to semicondcutor laser unit 500, the width of the protrusion Ri of red semiconductor laser diode 20 is approximately 2.5 μ m as described later.Therefore, preferred heat release is more than the 5 μ m with the width w320 of insulating barrier 320.

In addition, the Y direction width of bluish violet semiconductor Laser device 10 is approximately 350 μ m.Therefore, heat release is preferably below the 35 μ m with the width w320 of insulating barrier 320.In the present embodiment, for example heat release is set at 15 μ m with the width w320 of insulating barrier 320.

(4) about the effect of exothermicity

With regard to semicondcutor laser unit 500, when bluish violet semiconductor Laser device 10 drives, be positioned at semiconductor layer (the MQW active layer 104 described later) heating of the protrusion Ri below of bluish violet semiconductor Laser device 10.At this moment, the heat that produces in bluish violet semiconductor Laser device 10 is being by melting a layer H, auxiliary substrate 31 and conductive layer 31a, 31b, and is delivered to support component 5, and is released.

In addition, when red semiconductor laser diode 20 drives, be positioned at semiconductor layer (the MQW active layer 204 described later) heating of the protrusion Ri below of red semiconductor laser diode 20.At this moment, the heat that in red semiconductor laser diode 20, produces by insulating barrier 32, bluish violet semiconductor Laser device 10, melting a layer H, auxiliary substrate 31 and conductive layer 31a, 31b, and be delivered to support component 5, and be released.

Like this, the heat that produces in red semiconductor laser diode 20 is compared with the heat that produces in bluish violet semiconductor Laser device 10, is delivered to support component 5 by the path that grows insulating barrier 32 and bluish violet semiconductor Laser device 10.Therefore, the exothermicity of red semiconductor laser diode 20 poor than bluish violet semiconductor Laser device 10.

Here, bluish violet semiconductor Laser device 10 comprises nitride-based semiconductor as described later.The common thermal conductivity height of known this nitride-based semiconductor.For example, the thermal conductivity as the GaN of nitride-based semiconductor is approximately 130W/mK.

On the other hand, block thermal conductivity ratio nitride-based semiconductor low of the insulating barrier 32 that is electrically connected.For example, be used as the SiO of insulating barrier 32 ₂Thermal conductivity be about 1.5W/mK.

In the present embodiment, the protrusion at red semiconductor laser diode 20 forms the thin heat release insulating barrier 320 of configuration in the zone.In addition, in other zone configuration than heat release with the thick low capacitive insulation layer 321 of insulating barrier 320.

Thus, be arranged in heat that the semiconductor layer (MQW active layer 204 described later) of the protrusion Ri below of red semiconductor laser diode 20 produces by thin heat release insulating barrier 320, and be delivered to bluish violet semiconductor Laser device 10 efficiently.

That is, utilize thin heat release insulating barrier 320, can be in the electric insulation of guaranteeing between bluish violet semiconductor Laser device 10 and the red semiconductor laser diode 20, the local exothermicity that improves red semiconductor laser diode 20.

As shown in figure 28, heat release has nothing in common with each other with the thickness of insulating barrier 320 and low capacitive insulation layer 321, thus insulating barrier 32 in the above side have recess.Thereby the conductive layer 32a that forms above insulating barrier 32 also has recess.

When bonding red semiconductor laser diode 20 on bluish violet semiconductor Laser device 10, as mentioned above, on conductive layer 32a, form and melting a layer H.At this moment, melting layer H seamlessly is filled in the recess of conductive layer 32a.

Therefore, fully prevent to produce the space between bluish violet semiconductor Laser device 10 and the red semiconductor laser diode 20.As a result, the heat that produces in the red semiconductor laser diode 20 is delivered to bluish violet semiconductor Laser device 10 efficiently by melting layer H.

As mentioned above, in the present embodiment, only form the thin heat release insulating barrier 320 of configuration in the zone at protrusion, the thick low capacitive insulation layer 321 of configuration in other zone, its reason is as described later.

(5) electric wiring of semicondcutor laser unit

Figure 29 is the circuit diagram of electric wiring of the semicondcutor laser unit 500 of expression the 7th execution mode.

As mentioned above, power pin 2 is electrically connected with the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and the n side liner electrode 20b of red semiconductor laser diode 20 when being electrically connected with support component 5.

On the other hand, the p side liner electrode 20a of the p side liner electrode 10a of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 and support component 5, be power pin 2 electric insulations.

In the semicondcutor laser unit 500 of the 7th execution mode, by applying the voltage higher to one of power pin 1a, 1b than earthing potential, but individual drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.As a result, the control of the driving voltage of each semiconductor Laser device becomes easy.

(6) auxiliary substrate and insulating barrier are as dielectric effect

But above-mentioned semicondcutor laser unit 500 is set in optical Pickup device etc.Usually, utilize alternating voltage to drive optical Pickup device.That is, utilize alternating voltage to drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.At this moment, the auxiliary substrate 31 of Figure 26 and insulating barrier 32 are as dielectric.

Figure 30 is used to illustrate the auxiliary substrate 31 of Figure 26 and insulating barrier 32 equivalent circuit diagram as dielectric effect.

Equivalent circuit diagram when Figure 30 (a) expression drives bluish violet semiconductor Laser device 10, the equivalent circuit diagram when Figure 30 (b) expression drives red semiconductor laser diode 20.

Utilizing alternating voltage to drive under the situation of bluish violet semiconductor Laser device 10, bluish violet semiconductor Laser device 10 is shown in Figure 30 (a), and Ri is made as resistance with protrusion, and 10c is expressed as dielectric with the electric current barrier layer.At this moment, the auxiliary substrate 31 of insulating properties is used as the dielectric that is connected in parallel with bluish violet semiconductor Laser device 10.

Usually, represent the capacitance that produces in the layer of insulating properties with following formula.

C1＝εs·ε0·S/d…(3)

C1 is the capacitance that produces in the layer of insulating properties, and ε s is the ratio dielectric constant of the layer of insulating properties, and ε 0 is the dielectric constant of vacuum.In addition, S is the area of the layer of insulating properties, and d is the thickness of the layer of insulating properties.

In the 7th execution mode, has the thickness (Z direction) of 0.5 μ m as the electric current barrier layer 10c of the layer of insulating properties.In addition, bluish violet semiconductor Laser device 10 has the width (Y direction) of about 350 μ m, has the length (directions X) of about 600 μ m.

In addition, by SiO ₂The ratio dielectric constant of the electric current barrier layer 10c that constitutes is 4, and the dielectric constant of vacuum is 8.854 * 10 ^-12F/m.

The width (Y direction) that is formed at the protrusion Ri on the bluish violet semiconductor Laser device 10 is compared with the width of bluish violet semiconductor Laser device 10, and is very little.Here, thickness, width and the length with electric current barrier layer 10c is made as 0.5 μ m, 350 μ m and 600 μ m.At this moment, if obtain the capacitance that produces among the electric current barrier layer 10c according to formula (3), then the capacitance that produces among the electric current barrier layer 10c is about 15pF.

On the contrary, the thickness of auxiliary substrate 31 is about 200 μ m.Width (Y direction) at bluish violet semiconductor Laser device 10 is approximately 350 μ m, and length (directions X) is approximately under the situation of 600 μ m, if obtain the capacitance that produces in the auxiliary substrate 31 according to formula (3), the capacitance that produces in auxiliary substrate 31 when then bluish violet semiconductor Laser device 10 drives is about below the 100fF.

Like this, in the 7th execution mode, the capacitance that produces in auxiliary substrate 31 is compared with the capacitance that produces in the electric current barrier layer 10c of bluish violet semiconductor Laser device 10, and very little value is shown.

Therefore, under the situation that only drives bluish violet semiconductor Laser device 10, the capacitance that produces among the total (front is called the actual effect capacitance) of the capacitance that produces among auxiliary substrate 31 and the electric current barrier layer 10c and the electric current barrier layer 10c about equally.

Calculate the cut-off frequency of bluish violet semiconductor Laser device 10 according to the actual effect capacitance.Cut-off frequency is high more, and the high frequency characteristics when then semiconductor Laser device drives is good more.

The cut-off frequency of representing semiconductor Laser device simply by following formula.

$\mathrm{fT}=\frac{1}{2\mathrm{\π}\sqrt{\mathrm{LC}}}\·\·\·\left(4\right)$

FT is the cut-off frequency of semiconductor Laser device, and L is the inductance of semiconductor Laser device, the actual effect capacitance when C is the semiconductor Laser device driving.

At this moment, as the formula (4), 1/2 power of the cut-off frequency of bluish violet semiconductor Laser device 10 and actual effect capacitance is inversely proportional to.Therefore, the actual effect capacitance of bluish violet semiconductor Laser device 10 is more little, and then cut-off frequency is high more.

As mentioned above, the capacitance that produces in auxiliary substrate 31 is compared under the very little situation with the capacitance that produces in electric current barrier layer 10c, and the cut-off frequency that causes because of the influence of auxiliary substrate 31 descends and becomes enough little.Its result fully suppresses the deterioration of the high frequency characteristics of the bluish violet semiconductor Laser device 10 that the influence because of auxiliary substrate 31 causes.

On the other hand, utilizing alternating voltage to drive under the situation of red semiconductor laser diode 20, red semiconductor laser diode 20 is shown in Figure 30 (b), and Ri is made as resistance with protrusion, and the first electric current barrier layer 20c is expressed as dielectric.At this moment, insulating barrier 32 is used as the dielectric that is connected in parallel with red semiconductor laser diode 20.

In the 7th execution mode, has the thickness (Z direction) of 0.5 μ m as the first electric current barrier layer 20c of transition zone effect.In addition, red semiconductor laser diode 20 has the width (Y direction) of about 200 μ m, has the length (directions X) of about 600 μ m.In addition, the first electric current barrier layer 20c as the transition zone effect is made of AlInP.

The width (Y direction) that is formed at the protrusion Ri in the red semiconductor laser diode 20 is compared with the width of red semiconductor laser diode 20, and is very little.Here, thickness, width and the length with the first electric current barrier layer 20c is made as 0.5 μ m, 200 μ m and 600 μ m.In addition, the ratio dielectric constant of AlInP is approximately 13.At this moment, if obtain the capacitance that produces according to formula (3) in the first electric current barrier layer 20c, then the capacitance that produces among the first electric current barrier layer 20c is approximately 28pF.

Here, the size of insulating barrier 32 is configured to the capacitance of generation in insulating barrier 32 for below the capacitance that produces in the first electric current barrier layer 20c.

As mentioned above, insulating barrier 32 has following formation, promptly forms the heat release of extending along directions X in the zone at protrusion and uses insulating barrier 320 with arranged side by side along the Y direction along the low capacitive insulation layer 321 of directions X extension in other zone.

Therefore, heat release all is used as the dielectric that is connected in parallel with red semiconductor laser diode 20 with insulating barrier 320 and low capacitive insulation layer 321.

Thus, the capacitance that produces in the insulating barrier 32 that is made of with insulating barrier 320 and low capacitive insulation layer 321 heat release is represented by following formula.

C32＝C320+C321…(5)

C32 is the capacitance that produces in the insulating barrier 32, and C320 is the capacitance of heat release with generation in the insulating barrier 320, and C321 is the capacitance that produces in the low capacitive insulation layer 321.

And, come the capacitance C320 of the heat release of expression (5) with generation in the insulating barrier 320 with formula (3).

C320＝εs1·ε0·Sa/da…(6)

ε s1 is the ratio dielectric constant of insulating barrier 32.In addition, Sa is the area of heat release with insulating barrier 320, and da is the thickness of heat release with insulating barrier 320.

In the 7th execution mode, heat release has the thickness t 320 of 0.05 μ m with insulating barrier 320.In addition, heat release has the width W 320 of 15 μ m with insulating barrier 320, has the length of about 600 μ m.By SiO ₂The ratio dielectric constant of the insulating barrier 32 that constitutes is 4.At this moment, if obtain the capacitance of heat release with generation in the insulating barrier 320 according to formula (6), then its capacitance is about 6pF.

In addition, come the capacitance C321 that produces in the low capacitive insulation layer 321 of expression (5) with formula (3).

C321＝εs1·ε0·Sb/db…(7)

ε s1 is the ratio dielectric constant of insulating barrier 32.In addition, Sb is the area of low capacitive insulation layer 321, and db is the thickness of low capacitive insulation layer 321.

In the 7th execution mode, low capacitive insulation layer 321 has the thickness t 321 of 0.3 μ m.In addition, low capacitive insulation layer 321 has the width W 321 of 185 μ m, has the length of about 600 μ m.At this moment, if obtain the capacitance that produces in the low capacitive insulation layer 321 according to formula (7), then its capacitance is about 13pF.

Therefore, in the 7th execution mode, if obtain the capacitance that produces in the insulating barrier 32 according to formula (5), then its capacitance is about 19pF.

Like this, in the 7th execution mode, because heat release has above-mentioned size with insulating barrier 320 and low capacitive insulation layer 321, be below the capacitance that produces among the first electric current barrier layer 20c of red semiconductor laser diode 20 thereby can make the capacitance that produces in the insulating barrier 32.

The actual effect capacitance of this moment be the capacitance that produces among the first electric current barrier layer 20c with insulating barrier 32 in the capacitance ground addition value of generation, think below the twice of the capacitance that produces among the first electric current barrier layer 20c.

According to formula (4), 1/2 power of the cut-off frequency of red semiconductor laser diode 20 and actual effect capacitance is inversely proportional to.The result, the capacitance that produces in the insulating barrier 32 be the capacitance that produces among the first electric current barrier layer 20c when following red semiconductor laser diode 20 and the cut-off frequency of infrared semiconductor laser element 30, about three one-tenth of the declines at most of the cut-off frequency when never insulating barrier 32 being set.

Like this, by setting the thickness of insulating barrier 32, making in the insulating barrier 32 capacitance that produces is below the capacitance that produces among the first electric current barrier layer 20c, the cut-off frequency of the red semiconductor laser diode 20 that the influence of insulating barrier 32 causes is descended become enough little.That is, fully suppress the deterioration of the high frequency characteristics of red semiconductor laser diode 20.

In addition, in the 7th execution mode, driving by alternating voltage under the situation of bluish violet semiconductor Laser device 10, with the n side liner electrode 10b ground connection of insulating barrier 32 connections.Therefore, the cut-off frequency of bluish violet semiconductor Laser device 10 is not subjected to the influence of insulating barrier 32 basically.

(7) structure detail of bluish violet semiconductor Laser device

Figure 31 is the pattern sectional view of the structure detail of explanation bluish violet semiconductor Laser device 10.In the 7th execution mode, bluish violet semiconductor Laser device 10 is divided by outside the following aspect, have with first execution mode in bluish violet semiconductor Laser device 10 identical construction that illustrate.

In the 7th execution mode, insulating barrier 32 is made of with insulating barrier 320 and thick low capacitive insulation layer 321 thin heat release.Therefore, in predetermined subregion, form heat release insulating barrier 320.In addition, in other zone, form low capacitive insulation layer 321.

As mentioned above, in the 7th execution mode, by SiO ₂The electric current barrier layer 10c that constitutes for example has the thickness of 0.5 μ m.In addition, heat release for example has the thickness of 0.05 μ m with insulating barrier 320, and low capacitive insulation layer 321 for example has the thickness of 0.3 μ m.

(8) structure detail of red semiconductor laser diode

In the 7th execution mode, red semiconductor laser diode 20 have with first execution mode in red semiconductor laser diode 20 identical construction that illustrate.

In the semicondcutor laser unit 500 of above-mentioned the 7th execution mode, also the semiconductor Laser device (below be called the infrared semiconductor laser element) that penetrates near infrared laser (wavelength be 790nm) can be used as second semiconductor Laser device.At this moment, shown in the bracket of Figure 26, Figure 28, Figure 29 and Figure 30, the p side liner electrode of bonding infrared semiconductor laser element 30 on the n of bluish violet semiconductor Laser device 10 side liner electrode 10b.

(9) structure detail of infrared semiconductor laser element

In the 7th execution mode, infrared semiconductor laser element 30 have with first execution mode in infrared semiconductor laser element 30 identical construction that illustrate.

This infrared semiconductor laser element 30 is also the same with red semiconductor laser diode 20, has the width (Y direction) of about 200 μ m, and has the length (directions X) of about 600 μ m.

Even if using under the situation of infrared semiconductor laser element 30 that penetrates near infrared laser (wavelength as 790nm) as second semiconductor Laser device, also can be by heat release is set at 0.05 μ m with the thickness t 320 of insulating barrier 320, heat release is set at 15 μ m with the width w320 of insulating barrier 320, with the thickness setting of low capacitive insulation layer 321 is 0.3 μ m, and making the capacitance that produces in the insulating barrier 32 is below the capacitance that produces among the first electric current barrier layer 30c of red semiconductor laser diode 30.

Thus, this routine semicondcutor laser unit 500 selectively penetrates bluish violet color laser and two kinds of laser of infrared laser.In addition, according to this semicondcutor laser unit 500, can obtain effect the same when using red semiconductor laser diode 20 as second semiconductor Laser device.

(10) effect of semicondcutor laser unit gathers

(10-a) main effect

In the 7th execution mode, form the thin heat release of configuration in the zone with insulating barrier 320 at the protrusion of red semiconductor laser diode 20.Thus, be arranged in heat that the semiconductor layer (the MQW active layer 204 of Fig. 8) of the protrusion Ri below of red semiconductor laser diode 20 produces, be delivered to bluish violet semiconductor Laser device 10 efficiently by thin heat release insulating barrier 320.

As a result, utilize thin heat release insulating barrier 320, can be in the electric insulation of guaranteeing between bluish violet semiconductor Laser device 10 and the red semiconductor laser diode 20, the local exothermicity that improves red semiconductor laser diode 20.Therefore, fully reduce the decline of exothermicity.

As mentioned above, in the semicondcutor laser unit 500 of the 7th execution mode, realize the common cathode line of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.Therefore, by the voltage higher than earthing potential is provided to one of power pin 1a, 1b, but individual drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

Thus, the driving voltage of each semiconductor Laser device control transfiguration is easy.As a result, semicondcutor laser unit 500 selectively penetrates bluish violet color laser and two kinds of laser of red laser.

In the 7th execution mode, the capacitance that produces in insulating barrier 32 is for below the capacitance that produces in the first electric current barrier layer 20c.Thus, fully suppress the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of the layer of insulating properties causes.

(10-b) other effect

And, overlap with the wafer that forms a plurality of red semiconductor laser diodes 20 by making the wafer that forms a plurality of bluish violet semiconductor Laser devices 10, can make a plurality of semicondcutor laser units 500 simultaneously.At this moment, each bluish violet semiconductor Laser device 10 improves with the positional precision of each red semiconductor laser diode 20.As a result, the luminous point positioning accuracy of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 improves.

In addition, by between support component 5 and bluish violet semiconductor Laser device 10, auxiliary substrate 31 being set, can adjust the luminous point position of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

Be used as first semiconductor Laser device by the bluish violet semiconductor Laser device 10 that will comprise nitride-based semiconductor, improve the exothermicity of bluish violet semiconductor Laser device 10.In addition because on bluish violet semiconductor Laser device 10 lamination red semiconductor laser diode 20, so the exothermicity of red semiconductor laser diode 20 also improves.

The heat that bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 produce discharges from support component 5.In the 7th execution mode, bluish violet semiconductor Laser device 10 is set on support component 5, make p side liner electrode 10a be positioned at support component 5 sides.Thus, the luminous point of bluish violet semiconductor Laser device 10 is near support component 5.As a result, the exothermicity of bluish violet semiconductor Laser device 10 improves.

Red semiconductor laser diode 20 is configured to p side liner electrode 20a and constitutes support component 5 sides.Thus, because the luminous point of red semiconductor laser diode 20 is near support component 5, so exothermicity improves.

In above-mentioned, lamination is as the red semiconductor laser diode 20 of second semiconductor Laser device on as the bluish violet semiconductor Laser device 10 of first semiconductor Laser device.But, also can on bluish violet semiconductor Laser device 10, along the Y direction a plurality of semiconductor Laser devices be set simultaneously, and be not only a semiconductor Laser device.At this moment, the laser species (wavelength) and the quantity that penetrate from semicondcutor laser unit 500 are increased.

In addition, in above-mentioned, the n side liner electrode 20b of the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is connected on the support component 5.But, n side liner electrode 10b, 20b and the support component 5 that also can be electrically connected.

At this moment, can realize the unsteady line of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.Thus, can be to applying free voltage with the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20, the power pin that 20b is electrically connected.As a result, the control of the driving voltage of the bluish violet semiconductor Laser device 10 of the drive unit of based semiconductor laser aid 500 and red semiconductor laser diode 20 becomes easy.

(11) other configuration example

(11-a) shape of insulating barrier of the heat release in the XY plane

In the semicondcutor laser unit 500 of the 7th execution mode, also can followingly set the shape of the heat release usefulness insulating barrier 320 in the XY plane.

Figure 32 is that heat release in the explanation XY plane is with the top figure of the semicondcutor laser unit 500 of Figure 25 of the shape of insulating barrier 320.In Figure 32, for easy explanation, only diagram is arranged on the laminate that auxiliary substrate 31, bluish violet semiconductor Laser device 10, insulating barrier 32 and red semiconductor laser diode 20 on the support component 5 constitute.

In addition, in Figure 32, illustrate from the ejaculation direction of the red laser of red semiconductor laser diode 20 ejaculations with thick arrow.

Shown in Figure 32 (a), above-mentioned middle explanation is formed on the heat release insulating barrier 320 (chain-dotted line portion) that directions X extends along the protrusion Ri (dotted line part) of the red semiconductor laser diode 20 that extends at directions X with uniform width.

By forming heat release as mentioned above, can efficiently discharge the heat that produces among the protrusion Ri of red semiconductor laser diode 20 with insulating barrier 320.

But the heat release in the XY plane is not limited thereto with the shape of insulating barrier 320.For example, heat release also can form from an end face (laser penetrates end face 20T) of red semiconductor laser diode 20 ejaculation red lasers with insulating barrier 320 and narrow down continuously or by stages to other end, width.This chain-dotted line portion that is illustrated in Figure 32 (b).

At the protrusion Ri of red semiconductor laser diode 20, when red laser penetrated, near the optical density that laser penetrates the end face 20T uprised.Therefore, the caloric value of the protrusion Ri the laser emitting side end face 20T near is than the protrusion Ri height of other parts.

Therefore, wide by near laser emitting side end face 20T, heat release being got with the shape set of insulating barrier 320, can improve the exothermicity of the protrusion Ri of the high part of caloric value.

Heat release also is not limited to this with the shape of insulating barrier 320.For example, the heat release laser that also can only be formed at the protrusion Ri that extends along directions X with insulating barrier 320 penetrates near the end face 20T.

Setting shown in Figure 32 (b) under the situation of heat release with the shape of insulating barrier 320, it is below the capacitance that produces among the first electric current barrier layer 20c that heat release is also set the capacitance that produces in the insulating barrier 32 for the size of insulating barrier 320.

(11-b) other configuration example of insulating barrier

In the semicondcutor laser unit 500 of the 7th execution mode,, remove SiO as insulating barrier 32 ₂Also can use Al outward, ₂O ₃Or ZrO ₂The inorganic insulation material that constitutes Deng oxide forms, or the inorganic insulation material that uses nitride such as SiN or AlN to constitute forms.

In addition, the inorganic insulation material that insulating barrier 32 also can use diamond class carbon carbon element class materials such as (diamond like carbon) to constitute forms, or uses organic insulation material such as polyimides to form.And insulating barrier 32 also can be formed by the multilayer film that these materials constitute.

In table 1, SiO is shown ₂, SiN, Al ₂O ₃, AlN, ZrO ₂, diamond class carbon and polyimides ratio dielectric constant and thermal conductivity.In table 1,, ratio dielectric constant and the thermal conductivity of the GaN that uses in the bluish violet semiconductor Laser device 10 is shown also for reference.

[table 1]

Material	Compare dielectric constant	Thermal conductivity [W/mK]
			SiO 2	4	1.5

SiN	7	2
			Al 2O 3	8	30
AlN	9	200
			ZrO 2	9	2
Diamond class carbon	5.5	1000
			Polyimides	3.5	0.1
GaN	10	130

For example, in insulating barrier 32, use thermal conductivity ratio SiO ₂The AlN (thermal conductivity is 200W/mK) that (thermal conductivity is 1.5W/mK) is high.At this moment, the heat of semiconductor layer (the MQW active layer 204 of Fig. 8) generation that is arranged in the protrusion Ri below of red semiconductor laser diode 20 is delivered to support component 5 efficiently by bluish violet semiconductor Laser device 10.

But the ratio dielectric constant of AlN is 9, is as SiO ₂About three times of ratio dielectric constant 4.Therefore, for obtain with by SiO ₂The cut-off frequency of the red semiconductor laser diode 20 that semicondcutor laser unit that insulating barrier 32 obtains 500 is identical, the thickness that the insulating barrier 32 that is made of AlN will hang down capacitive insulation layer 321 is made as SiO ₂About three times of Shi Houdu.

Figure 33～Figure 35 is the local amplification front view of another configuration example of insulating barrier 32 of the semicondcutor laser unit 500 of expression the 7th execution mode.

In Figure 33 and Figure 34, insulating barrier 32 forms at the protrusion of red semiconductor laser diode 20 has the monolayer constructions will that is made of first insulating barrier 323 in the zone, have the double-layer structural that is made of first insulating barrier 323 and second insulating barrier 324 in other zone.

In the example of Figure 33, the protrusion on removing n side liner electrode 10b forms in the zone in zone, forms second insulating barrier 324 by selecting etching or photoetching with the pattern of regulation.

Afterwards, at the n side liner electrode 10b that exposes with above second insulating barrier 324, form first insulating barrier 323.Thus, finish the insulating barrier 32 that can form the exothermicity raising that makes red semiconductor laser diode 20 in the zone at protrusion.

On the other hand, in the example of Figure 34, in the subregion on n side liner electrode 10b, form first insulating barrier 323.Afterwards, the protrusion on removing first insulating barrier 323 forms in the zone in zone, forms second insulating barrier 324 by selecting etching or photoetching with the pattern of regulation.Thus, finish the insulating barrier 32 that can form the local raising of exothermicity that makes red semiconductor laser diode 20 in the zone at the protrusion of red semiconductor laser diode 20.

Like this, Figure 33 and insulating barrier 32 shown in Figure 34 are selected etching or photoetching Isodivs technology by using, and can easily be formed on the n side liner electrode 10b.

In this example, first and second insulating barriers 323,324 that constitute insulating barrier 32 can all use identical materials, also can use the material that has nothing in common with each other.

In addition, the materials used insulating properties material shown in the table 1 preferably in first and second insulating barriers 323,324.

In addition, insulating barrier 32 also can be made of high first insulating barrier 323 that material constituted of thermal conductivity and second insulating barrier 324 that material constituted littler than dielectric constant.

At this moment, as shown in figure 35, form configuration first insulating barrier 323 in the zone, configuration second insulating barrier 324 in other zone at the protrusion of red semiconductor laser diode 20.Thus, can form the local raising of the exothermicity that makes red semiconductor laser diode 20 in the zone at the protrusion of red semiconductor laser diode 20.

For example, in first insulating barrier 323, use AlN, in second insulating barrier 324, use SiO ₂

At this moment, be arranged in first insulating barrier 323 of heat by constituting of semiconductor layer (the MQW active layer 204 of Fig. 8) generation of the protrusion Ri below of red semiconductor laser diode 20, be delivered to bluish violet semiconductor Laser device 10 efficiently by AlN.

In addition, form in the zone in zone at the removal protrusion, because SiO ₂The ratio dielectric constant low, worsen required less thick so prevent the high frequency characteristics of red semiconductor laser diode 20.Therefore, about 1/3 of required thickness thickness prevents that the high frequency characteristics of red semiconductor laser diode 20 from worsening in the time of can being made of AlN with second insulating barrier 324.

Like this, by form the material of suitably selecting insulating barrier 32 in zone and other zone at protrusion, can make the top coplane of insulating barrier 32.

8. the 8th execution mode

(1) formation of semicondcutor laser unit

The semicondcutor laser unit of the 8th execution mode is in the following areas with the formation of the semicondcutor laser unit 500 of the 7th execution mode and move different.

Figure 36 is the pattern front elevation that the state behind the lid 4 of semicondcutor laser unit of the 8th execution mode is taken off in expression, and Figure 37 schemes above the pattern of the state behind the lid 4 of the expression semicondcutor laser unit that takes off the 8th execution mode.

As shown in figure 36, with package main body 3 incorporate conductivity support components 5 on, what form conductivity is melting a layer H.

Melting on the layer H, bonding bluish violet semiconductor Laser device 10 makes n side liner electrode 10b constitute support component 5 sides.

On the p of bluish violet semiconductor Laser device 10 side liner electrode 10a, be provided with by SiO ₂ The insulating barrier 32 that constitutes.In the 8th execution mode, insulating barrier 32 has the formation the same with the 7th execution mode.That is, insulating barrier 32 forms at the protrusion of red semiconductor laser diode 20 that thickness forms thinly in the zone (heat release with insulating barrier 320).In addition, insulating barrier 32 thickness in other zone forms thickly (low capacitive insulation layer 321).

On insulating barrier 32, form the conductive layer 32a that comprises Au.On conductive layer 32a, layer bonding red semiconductor laser diode 20 of H that melting via the AuSn formation makes p side liner electrode 20a constitute support component 5 sides.

Shown in the bracket of Figure 36, also can on bluish violet semiconductor Laser device 10, replace red semiconductor laser diode 20 by lamination infrared semiconductor laser element 30.In addition, under the situation of lamination infrared semiconductor laser element 30 on the bluish violet semiconductor Laser device 10, infrared semiconductor laser element 30 is set, makes p side liner electrode 30a constitute support component 5 sides.

(2) electric wiring of semicondcutor laser unit

As Figure 36 and shown in Figure 37, power pin 1a, 1b utilize dead ring 1z and package main body 3 electric insulations respectively.Power pin 1a is electrically connected through the p side liner electrode 10a of lead-in wire W3 and bluish violet semiconductor Laser device 10.The conductive layer 32a of power pin 1b on lead-in wire W1 and insulating barrier 32 is electrically connected.The n side liner electrode 20b of the top and red semiconductor laser diode 20 that exposes of support component 5 utilizes lead-in wire W2 to be electrically connected.

The n side liner electrode 10b of bluish violet semiconductor Laser device 10 is electrically connected through melting layer H on support component 5.Thus, power pin 2 is electrically connected with the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and the n side liner electrode 20b of red semiconductor laser diode 20.That is, realize the common cathode line of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

By to applying voltage between the power pin 1a, 2 and between the power pin 1b, 2 respectively, but individual drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.The electric wiring of the semicondcutor laser unit 500 of the 8th execution mode is the same with Figure 29.Therefore, in the semicondcutor laser unit 500 of the 8th execution mode the driving voltage of each semiconductor Laser device to control also transfiguration easy.

(3) size of insulating barrier and effect

The same with the 7th execution mode, in the insulating barrier 32 that uses in the 8th execution mode, also the protrusion at red semiconductor laser diode 20 forms the thin heat release insulating barrier 320 of formation in the zone.In addition, form in the zone in zone, form thick low capacitive insulation layer 321 at the protrusion of removing red semiconductor laser diode 20.

Therefore, in the present embodiment, the same with the 7th execution mode, utilize heat release insulating barrier 320, in the electric insulation of guaranteeing between bluish violet semiconductor Laser device 10 and the red semiconductor laser diode 20, the local exothermicity that improves red semiconductor laser diode 20.

(4) insulating barrier is as dielectric effect

Utilize alternating voltage to drive under the situation of semicondcutor laser unit 500 of the 8th execution mode, the insulating barrier 32 of Figure 36 is the same with the 7th execution mode, as dielectric.

Figure 38 is used to illustrate the equivalent circuit diagram of the insulating barrier 32 of Figure 36 as dielectric effect.

Equivalent circuit diagram when Figure 38 (a) expression drives bluish violet semiconductor Laser device 10, the equivalent circuit diagram when Figure 38 (b) expression drives red semiconductor laser diode 20.

Utilizing alternating voltage to drive under the situation of bluish violet semiconductor Laser device 10, bluish violet semiconductor Laser device 10 is shown in Figure 38 (a), and Ri is made as resistance with protrusion, and 10c is expressed as dielectric with the electric current barrier layer.In addition, red semiconductor laser diode 20 is shown in Figure 38 (a), and Ri is made as resistance with protrusion, and the first electric current barrier layer 20c is expressed as dielectric, and the pn composition surface is expressed as dielectric.And the same with first execution mode, insulating barrier 32 is as dielectric.

Like this, when utilizing alternating voltage to drive bluish violet semiconductor Laser device 10, insulating barrier 32 is connected in parallel on the bluish violet semiconductor Laser device 10 with the series circuit of red semiconductor laser diode 20.In addition, shown in Figure 38 (a), insulating barrier 32 is represented with the insulating barrier 320 and the formation of low capacitive insulation layer 321 with the heat release that is connected in parallel.

On the other hand, utilizing alternating voltage to drive under the situation of red semiconductor laser diode 20, red semiconductor laser diode 20 is shown in Figure 38 (b), and Ri is made as resistance with protrusion, and the first electric current barrier layer 20c is expressed as dielectric.In addition, bluish violet semiconductor Laser device 10 is shown in Figure 38 (b), and Ri is made as resistance with protrusion, and 10c is expressed as dielectric with the electric current barrier layer, and the pn composition surface is expressed as dielectric.At this moment, insulating barrier 32 is also as dielectric.Here, insulating barrier 32 is also represented with the insulating barrier 320 and the formation of low capacitive insulation layer 321 with the heat release that is connected in parallel.

Shown in Figure 38 (a) and (b), when driving a semiconductor Laser device, be connected in series another electric current barrier layer and pn composition surface with insulating barrier 32.Thus, reduced based on the electric current barrier layer of insulating barrier 32 and another semiconductor Laser device and the combined capacity value on pn composition surface.As a result, reduce by 32 pairs of influences that semiconductor Laser device causes of insulating barrier.

In addition, as illustrating in the 7th execution mode, when bluish violet semiconductor Laser device 10 drove, the capacitance that produces among the electric current barrier layer 10c was about 15pF.Thus, when bluish violet semiconductor Laser device 10 drives, preferably the capacitance that produces in the insulating barrier 32 is made as below about 15pF.At this moment, fully suppress the deterioration of the high frequency characteristics of the bluish violet semiconductor Laser device 10 that the influence because of the layer 32 of insulating properties causes.

For example, below the twice of Ci Shi actual effect capacitance for the capacitance that in electric current barrier layer 10c, produces.As a result, the capacitance that produces in insulating barrier 32 is the cut-off frequency of the bluish violet semiconductor Laser device 10 of the capacitance that produces when following in electric current barrier layer 10c, and the cut-off frequency when never insulating barrier 32 being set descends about three one-tenth at most.

In addition, when red semiconductor laser diode 20 drove, the capacitance that produces in the first electric current barrier layer 20c was approximately 28pF.Thus, when red semiconductor laser diode 20 drives, preferably the capacitance that produces in the insulating barrier 32 is made as below about 28pF.At this moment, fully suppress the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of the layer 32 of insulating properties causes.

For example, Ci Shi actual effect capacitance is below the twice of the capacitance that produces among the electric current barrier layer 20c.As a result, the capacitance that produces in insulating barrier 32 is the cut-off frequency of the red semiconductor laser diode 20 of the capacitance that produces when following in electric current barrier layer 20c, and the cut-off frequency when never insulating barrier 32 being set descends about three one-tenth at most.

As mentioned above, be made as below about 15pF, can fully suppress the bluish violet semiconductor Laser device 10 that layers 32 influence because of insulating properties causes and the deterioration of red semiconductor laser diode 20 high frequency characteristics separately by the capacitance that will be in the insulating barrier 32 produces.

Like this, heat release by set constituting insulating barrier 32 is with the size of insulating barrier 320 and low capacitive insulation layer 321 and material etc., making in the insulating barrier 32 capacitance that produces is below the capacitance that produces among electric current barrier layer 10c, the 20c, the cut-off frequency of bluish violet semiconductor Laser device 10 that the influence of insulating barrier 32 causes and red semiconductor laser diode 20 is descended become enough little.That is, all fully suppressing the bluish violet semiconductor Laser device 10 that the influence because of insulating barrier 32 causes and the high frequency characteristics of red semiconductor laser diode 20 worsens.

In the 8th execution mode, insulating barrier 32 also can have other formation.For example, as the material of insulating barrier 32, also can use Al ₂O ₃Or ZrO ₂Deng the inorganic insulation material of oxide formation, or the inorganic insulation material that uses nitride such as SiN or AlN to constitute, SiO replaced ₂

In addition, as the material of insulating barrier 32, the inorganic insulation material that also can use carbon element class material such as diamond class carbon to constitute, or use organic insulation material such as polyimides.And insulating barrier 32 also can be formed by the multilayer film that these materials constitute.Insulating barrier 32 also can have the formation that illustrates among Figure 33～Figure 35.

(5) effect of semicondcutor laser unit

In the 8th execution mode, the same with the 7th execution mode, make the local raising of exothermicity of red semiconductor laser diode 20.Therefore, fully reduce the decline of exothermicity.In addition, in semicondcutor laser unit 500, realize the common cathode line.Therefore, but individual drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

The capacitance that produces in the insulating barrier 32 is set at below the capacitance that produces among the electric current barrier layer 10c.Thus, becoming in the control of the driving voltage of bluish violet semiconductor Laser device 10 is easy to simultaneously, fully suppresses the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of the layer 32 of insulating properties causes.

In the 8th execution mode, the capacitance that will produce in insulating barrier 32 is set at below the capacitance that produces in the first electric current barrier layer 20c.Thus, becoming in the control of the driving voltage of red semiconductor laser diode 20 is easy to simultaneously, fully suppresses the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of the layer 32 of insulating properties causes.

In addition, to be configured to p side liner electrode 10a relative through insulating barrier 32 with p side liner electrode 20a for bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.Thus, because the semiconductor layer of the semiconductor layer of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is approaching, so can make the luminous point of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 close mutually.Thereby, when the laser from bluish violet semiconductor Laser device 10 and 20 ejaculations of red semiconductor laser diode sees through collector lens, can suppress the aberration that lens produce.

In the semicondcutor laser unit 500 of the 8th execution mode, between support component 5 and bluish violet semiconductor Laser device 10, auxiliary substrate 31 is not set, but can between support component 5 and bluish violet semiconductor Laser device 10, auxiliary substrate 31 be set yet.

At this moment, can utilize the thickness of auxiliary substrate 31 to adjust each luminous point position of bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30.

In addition, between support component 5 and bluish violet semiconductor Laser device 10, be provided with under the situation of auxiliary substrate 31, also can utilize auxiliary substrate 31 to come the n side liner electrode 10b and the support component 5 of electric insulation bluish violet semiconductor Laser device 10.At this moment, can realize the unsteady line of bluish violet semiconductor Laser device 10.Thus, the power pin that can be electrically connected to the n side liner electrode 10b with bluish violet semiconductor Laser device 10 applies free voltage.As a result, the driving voltage of the bluish violet semiconductor Laser device 10 of the drive unit of based semiconductor laser aid 500 and red semiconductor laser diode 20 control transfiguration is easy.

9. the 9th execution mode

(1) formation of semicondcutor laser unit

The semicondcutor laser unit of the 9th execution mode is in the following areas with the formation of the semicondcutor laser unit 500 of the 8th execution mode and move different.

Figure 39 is the pattern front elevation that the state behind the lid 4 of semicondcutor laser unit of the 9th execution mode is taken off in expression, and Figure 40 schemes above the pattern of the state behind the lid 4 of the expression semicondcutor laser unit that takes off the 9th execution mode.

As shown in figure 39, with package main body 3 incorporate conductivity support components 5 on, what form conductivity is melting a layer H.Melting on the layer H, bonding bluish violet semiconductor Laser device 10 makes n side liner electrode 10b constitute support component 5 sides.

In the 9th execution mode, width of bluish violet semiconductor Laser device 10 (Y direction) and length (directions X) are bigger than the bluish violet semiconductor Laser device 10 of the 7th execution mode.Particularly, width of bluish violet semiconductor Laser device 10 (Y direction) and length (directions X) are approximately 500 μ m respectively and are approximately 600 μ m.

Be formed with the p side liner electrode 10a of bluish violet semiconductor Laser device 10 in the subregion of electric current barrier layer 10c in being formed at semiconductor layer.Thus, electric current barrier layer 10c narrows down the electric current that flows in the bluish violet semiconductor Laser device 10 under p side liner electrode 10a.That is, under p side liner electrode 10a, form protrusion Ri.As mentioned above, electric current barrier layer 10c is by SiO ₂Constitute.

In addition, in the semicondcutor laser unit 500 of Figure 39, the side of bluish violet semiconductor Laser device 10 perpendicular to the axle of Y direction forms p side liner electrode 10a.The width (Y direction) of p side liner electrode 10a and length (directions X) are approximately 200 μ m respectively and are approximately 600 μ m.

On electric current barrier layer 10c, as described later, bonding red semiconductor laser diode 20.This electric current barrier layer 10c is different with the thickness (Z direction) in other zone in the zone of the protrusion Ri of bonding red semiconductor laser diode 20.

The part that the protrusion that will be positioned at red semiconductor laser diode 20 forms the electric current barrier layer 10c in zone is called heat release with barrier layer 330.In addition, will be arranged in the part of electric current barrier layer 10c that protrusion forms the zone beyond the zone and be called low electric capacity barrier layer 331.The details of heat release usefulness barrier layer 330 and low electric capacity barrier layer 331 as described later.

In the XY plane, with p side liner electrode 10a state at interval under, in other zone of electric current barrier layer 10c, form the conductive layer 33 that comprises Au.The formation zone of the conductive layer in the XY plane 33 is called conductive layer forms the zone.

Conductive layer forms the protrusion that the zone comprises red semiconductor laser diode 20 and forms the zone, is configured in the another side side of the bluish violet semiconductor Laser device 10 vertical with the axle of Y direction.Conductive layer forms the zone, be that the width (Y direction) and the length (directions X) of conductive layer 33 is approximately 280 μ m respectively and is approximately 600 μ m.

On conductive layer 33, via layer bonding red semiconductor laser diode 20 of H that melting of AuSn formation, so that p side liner electrode 20a constitutes support component 5 sides.In addition, the red semiconductor laser diode 20 of the Figure 31 that illustrates in the red semiconductor laser diode 20 that uses in the present embodiment and the 7th execution mode is identical.Therefore, width of red semiconductor laser diode 20 (Y direction) and length (directions X) are approximately 200 μ m respectively and are about 600 μ m.

Shown in the bracket of Figure 39, also can on bluish violet semiconductor Laser device 10, replace red semiconductor laser diode 20 by lamination infrared semiconductor laser element 30.

(2) electric wiring of semicondcutor laser unit

As Figure 39 and shown in Figure 40, power pin 1a, 1b utilize dead ring 1z and package main body 3 electric insulations respectively.Power pin 1a is electrically connected through the p side liner electrode 10a of lead-in wire W3 and bluish violet semiconductor Laser device 10.Power pin 1b is electrically connected through lead-in wire W1 and conductive layer 33.The n side liner electrode 20b of the top and red semiconductor laser diode 20 that exposes of support component 5 utilizes lead-in wire W2 to be electrically connected.

The n side liner electrode 10b of bluish violet semiconductor Laser device 10 is electrically connected through melting layer H on support component 5.Thus, power pin 2 is electrically connected with the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and the n side liner electrode 20b of red semiconductor laser diode 20.That is, realize the common cathode line of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

By to applying voltage between the power pin 1a, 2 and between the power pin 1b, 2 respectively, but individual drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

The electric wiring of the semicondcutor laser unit 500 of the 9th execution mode is the same with Figure 29.Therefore, the control of the driving voltage of each semiconductor Laser device also becomes easy in the semicondcutor laser unit 500 of the 9th execution mode.

(3) size of electric current barrier layer

Heat release barrier layer 330 and the low electric capacity barrier layer 331 of electric current barrier layer 10c are described.These heat releases with barrier layer 330 and low electric capacity barrier layer 331 play respectively with the heat release of the insulating barrier 32 that in the first and the 8th execution mode, illustrates with the identical effect of insulating barrier 320 and low capacitive insulation layer 321.

Therefore, the protrusion that is positioned at red semiconductor laser diode 20 heat release that forms the zone has the thickness thinner than the low electric capacity barrier layer 331 that is positioned at other zone with barrier layer 330.

In the following description, the thickness of low electric capacity barrier layer 331 is made as t331, heat release is made as t330 with the thickness of barrier layer 330.In addition, heat release is made as w330 with the width (Y direction) of barrier layer 330.

Here, best heat release has about size below 1/2 of the thickness t 331 of low electric capacity barrier layer 331 with the thickness t 330 of barrier layer 330.

In the semicondcutor laser unit 500 of Figure 39, the thickness t 331 of low electric capacity barrier layer 331 for example is 0.5 μ m.Therefore, heat release is preferably below the 0.25 μ m with the thickness t 330 of barrier layer 330.In the present embodiment, for example heat release is set at 0.05 μ m with the thickness t 330 of barrier layer 330.

In addition, heat release preferably has about size below 1/10 of bluish violet semiconductor Laser device 10 whole width with the above size of twice that the width w330 of barrier layer 330 preferably has the width of the protrusion Ri that is approximately red semiconductor laser diode 20.

With regard to the semicondcutor laser unit 500 of Figure 39, the red semiconductor laser diode 20 that uses in the width of the protrusion Ri of red semiconductor laser diode 20 and the 7th execution mode is the same, is approximately 2.5 μ m.Therefore, best heat release is more than the 5 μ m with the width w330 of barrier layer 330.

In addition, the Y direction width of bluish violet semiconductor Laser device 10 is approximately 500 μ m.Therefore, heat release is preferably below the 50 μ m with the width w330 of barrier layer 330.In the present embodiment, for example heat release is set at 15 μ m with the width w330 of barrier layer 330.

(4) about the effect of exothermicity

As mentioned above, in the present embodiment, form the thin heat release of configuration in the zone with barrier layer 330 at the protrusion of red semiconductor laser diode 20.In addition, in other zone configuration than heat release with the thick low electric capacity barrier layer 331 of barrier layer 330.

Thus, be arranged in heat that the semiconductor layer (the MQW active layer 204 of Fig. 8) of the protrusion Ri below of red semiconductor laser diode 20 produces, be delivered to bluish violet semiconductor Laser device 10 efficiently by thin heat release barrier layer 330.

That is, utilize thin heat release barrier layer 330, can be in the electric insulation of guaranteeing between bluish violet semiconductor Laser device 10 and the red semiconductor laser diode 20, the local exothermicity that improves red semiconductor laser diode 20.

(5) the electric current barrier layer is as dielectric effect

Here, in the 9th execution mode, when utilizing alternating voltage to drive red semiconductor laser diode 20, conductive layer forms the electric current barrier layer 10c in zone as dielectric.Therefore, in the 9th execution mode, it is below the capacitance that produces among the first electric current barrier layer 20c that preferred conductive layer forms the capacitance that produces among the electric current barrier layer 10c in zone.

The setting of the capacitance that produces among this electric current barrier layer 10c can be by adjusting electric current barrier layer 10c the thickness of low electric capacity barrier layer 331 carry out, also can adjust the capacitance that produces among the electric current barrier layer 10c by setting material, width and the length of low electric capacity barrier layer 331.

In the 9th execution mode, be arranged in the capacitance that produces of electric current barrier layer 10c that conductive layer forms the zone if obtain according to formula (5)～(7), then its capacitance is about 18pF.

On the other hand, as illustrating in the 7th execution mode, if obtain the capacitance that produces among the first electric current barrier layer 20c according to formula (3), then the capacitance that produces among the first electric current barrier layer 20c is about 28pF.

Therefore, with regard to the semicondcutor laser unit 500 of present embodiment, be arranged in the capacitance that produces of electric current barrier layer 10c that conductive layer forms the zone and be below the capacitance that the first electric current barrier layer 20c produces.

The actual effect capacitance of this moment is below 2 times of capacitance that produce among the first electric current barrier layer 20c.As a result, the capacitance that produces among the electric current barrier layer 10c is the cut-off frequency of the capacitance that produces among the first electric current barrier layer 20c red semiconductor laser diode 20 when following, and the cut-off frequency when electric current barrier layer 10c never is set descends about three one-tenth at most.

Like this, by setting the thickness of electric current barrier layer 10c, making the capacitance that produces among the electric current barrier layer 10c is below the capacitance that produces among the first electric current barrier layer 20c, the cut-off frequency of the red semiconductor laser diode 20 that the influence of electric current barrier layer 10c causes is descended become enough little.That is, fully suppress the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of electric current barrier layer 10c causes.

In addition, to be configured to p side liner electrode 10a relative with p side liner electrode 20a for bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.Thus, because the semiconductor layer of the semiconductor layer of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is approaching, so can make the luminous point of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 close mutually.Thereby, when the laser from bluish violet semiconductor Laser device 10 and 20 ejaculations of red semiconductor laser diode sees through collector lens, can suppress the aberration that lens produce.

In the 9th execution mode, electric current barrier layer 10c also can have other formation.For example, as the material of electric current barrier layer 10c, also can use Al ₂O ₃Or ZrO ₂Deng the inorganic insulation material of oxide formation, or the inorganic insulation material that uses nitride such as SiN or AlN to constitute, SiO replaced ₂

In addition, as the material of electric current barrier layer 10c, the inorganic insulation material that also can use carbon element class material such as diamond class carbon to constitute, or use organic insulation material such as polyimides.And electric current barrier layer 10c also can be formed by the multilayer film that these materials constitute.Electric current barrier layer 10c also can have the formation that illustrates among Figure 33～Figure 35.

10. the tenth execution mode

(1) formation of semicondcutor laser unit

The semicondcutor laser unit of the tenth execution mode is in the following areas with the formation of the semicondcutor laser unit 500 of the 7th execution mode and move different.

Figure 41 is the stereoscopic figure of the semicondcutor laser unit of expression the tenth execution mode.

Among Figure 41, the semicondcutor laser unit 500 of the tenth execution mode also possesses power pin 1c except that the semicondcutor laser unit 500 of the 7th execution mode.

Figure 42 is the pattern front elevation that the state behind the lid 4 of semicondcutor laser unit 500 of Figure 41 is taken off in expression, and Figure 43 schemes above the pattern of the state behind the lid 4 of the expression semicondcutor laser unit 500 that takes off Figure 41.

As shown in figure 42, with package main body 3 incorporate conductivity support components 5 on, the same with the semicondcutor laser unit 500 of the 7th execution mode, through a plurality of layer H, sequential laminating auxiliary substrate 31, bluish violet semiconductor Laser device 10, insulating barrier 32 and red semiconductor laser diodes 20 of melting.

In addition, the same with the 7th execution mode, in the present embodiment, insulating barrier 32 also is made of with insulating barrier 320 and thick low capacitive insulation layer 321 thin heat release.

In addition, in this example, auxiliary substrate 31 in the above and below possess conductive layer 31a, 31b.On insulating barrier 32, form conductive layer 32a.

Shown in the bracket of Figure 42, also can on bluish violet semiconductor Laser device 10, replace red semiconductor laser diode 20 by lamination infrared semiconductor laser element 30.

(2) electric wiring of semicondcutor laser unit

As Figure 42 and shown in Figure 43, power pin 1a, 1b, 1c utilize dead ring 1z and package main body 3 electric insulations respectively.

The conductive layer 31a of power pin 1a on lead-in wire W4 and auxiliary substrate 31 is electrically connected.Thus, the p side liner electrode 10a of power pin 1a and bluish violet semiconductor Laser device 10 is electrically connected.

The conductive layer 32a of power pin 1b on lead-in wire W1 and insulating barrier 32 is electrically connected.Thus, the p side liner electrode 20a of power pin 1b and red semiconductor laser diode 20 is electrically connected.

Power pin 1c is electrically connected through the n side liner electrode 10b of lead-in wire W3 and bluish violet semiconductor Laser device 10 when the n side liner electrode 20b through lead-in wire W2 and red semiconductor laser diode 20 is electrically connected.Thus, power pin 1c is as the common n side liner electrode of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.That is, realize the same cathode connection of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

Especially in the tenth execution mode, bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 respectively with conductivity support component 5 electric insulations.That is bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 state line, to float from support component 5.

By to applying voltage between power pin 1a, the 1c and between power pin 1b, the 1c respectively, but individual drive bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

Figure 44 is the circuit diagram of electric wiring of the semicondcutor laser unit 500 of expression the tenth execution mode.

As mentioned above, bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 all with conductivity support component 5 electric insulations.At this moment, can apply voltage arbitrarily to power pin 1c.

For example, when red semiconductor laser diode 20 drove, 1c applied earthing potential to power pin, applies the voltage higher than earthing potential to power pin 1a.On the other hand, when the driving voltage bluish violet semiconductor Laser devices 10 higher than red semiconductor laser diode 20 drove, 1c applied negative voltage to power pin, applied voltage identical when driving with red semiconductor laser diode 20 to power pin 1a.

Like this, bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 and conductivity support component 5 electric insulations.In addition, because can be to applying free voltage, so the driving voltage of each semiconductor Laser device control transfiguration is easy with the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20, the power pin 1a that 20b is electrically connected.

In the tenth execution mode, when the n side liner electrode 20b of the n side liner electrode 10b of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is electrically connected each other, with conductivity support component 5 electric insulations.At this moment, can apply voltage to the n side liner electrode 20b of the n of bluish violet semiconductor Laser device 10 side liner electrode 10b and red semiconductor laser diode 20 respectively.

11. the 11 execution mode

(1) formation of semicondcutor laser unit

The semicondcutor laser unit of the 11 execution mode is in the following areas with the formation of the semicondcutor laser unit 500 of the 7th execution mode and move different.The outward appearance of the semicondcutor laser unit of the 11 execution mode is identical with the semicondcutor laser unit of Figure 41 500, and is the same with the tenth execution mode, except that the semicondcutor laser unit 500 of the 7th execution mode, also possesses power pin 1c.

Figure 45 is the pattern front elevation that the state behind the lid 4 of semicondcutor laser unit of the 11 execution mode is taken off in expression, and Figure 46 schemes above the pattern of the state behind the lid 4 of the expression semicondcutor laser unit that takes off the 11 execution mode.

With package main body 3 incorporate conductivity support components 5 on, the same with the semicondcutor laser unit 500 of the 7th execution mode, through a plurality of melting the layer H, sequential laminating auxiliary substrate 31 and bluish violet semiconductor Laser devices 10.In the 11 execution mode, auxiliary substrate 31 also possesses conductive layer 31a, 31b with following in the above.

In the subregion on the n of bluish violet semiconductor Laser device 10 side liner electrode 10b (below be called first insulating regions), be provided with by SiO ₂ The insulating barrier 34 that constitutes.On insulating barrier 34, as described later, bonding red semiconductor laser diode 20.This insulating barrier 34 forms regional different with the thickness (Z direction) in other zone at the protrusion of bonding red semiconductor laser diode 20.

That is, in the present embodiment, the insulating barrier 34 between bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20 is made of with insulating barrier 340 and thick low capacitive insulation layer 341 thin heat release.On insulating barrier 34, form the conductive layer 34a that comprises Au.

And, in the subregion on the n side liner electrode 10b of the bluish violet semiconductor Laser device 10 of removing first insulating regions (below be called second insulating regions), be provided with by SiO ₂ The insulating barrier 35 that constitutes.On insulating barrier 35, as described later, bonding infrared semiconductor laser element 30.This insulating barrier 35 forms regional different with the thickness (Z direction) in other zone at the protrusion of bonding infrared semiconductor laser element 30.

That is, in the present embodiment, the insulating barrier 35 between bluish violet semiconductor Laser device 10 and infrared semiconductor laser element 30 is made of with insulating barrier 350 and thick low capacitive insulation layer 351 thin heat release.On insulating barrier 35, form the conductive layer 35a that comprises Au.

Above-mentioned first insulating regions and second insulating regions be each interval on n side liner electrode 10b.Therefore, conductive layer 34a, the 35a electric insulation on the insulating barrier 34,35.

On conductive layer 34a,, make p side liner electrode 20a constitute support component 5 sides through melting the bonding red semiconductor laser diode 20 of layer H.On conductive layer 35a,, make p side liner electrode 30a constitute support component 5 sides through melting the bonding infrared semiconductor laser element 30 of layer H.

Here, in the 11 execution mode, bluish violet semiconductor Laser device 10 has the width (Y direction) of about 700 μ m, and has the length (directions X) of about 600 μ m.Red semiconductor laser diode 20 has the width (Y direction) of about 200 μ m, and has the length (directions X) of about 600 μ m.Infrared semiconductor laser element 30 has the width (Y direction) of about 200 μ m, and has the length (directions X) of about 600 μ m.

And insulating barrier 34,35 is the same with the insulating barrier 32 of the 7th execution mode, has the width (Y direction) of about 300 μ m, and has the length (directions X) of about 600 μ m.

(2) electric wiring of semicondcutor laser unit

As Figure 45 and shown in Figure 46, power pin 1a, 1b, 1c utilize dead ring 1z and package main body 3 electric insulations respectively.

The conductive layer 31a of power pin 1a on lead-in wire W6 and auxiliary substrate 31 is electrically connected.Thus, the p side liner electrode 10a of power pin 1a and bluish violet semiconductor Laser device 10 is electrically connected.

The conductive layer 34a of power pin 1b on lead-in wire W1 and insulating barrier 34 is electrically connected.Thus, the p side liner electrode 20a of power pin 1b and red semiconductor laser diode 20 is electrically connected.

The conductive layer 35a of power pin 1c on lead-in wire W4 and insulating barrier 35 is electrically connected.Thus, the p side liner electrode 30a of power pin 1b and infrared semiconductor laser element 30 is electrically connected.

The top n side liner electrode 10b with bluish violet semiconductor Laser device 10 that exposes of support component 5 is electrically connected by lead-in wire W2, the top n side liner electrode 20b with red semiconductor laser diode 20 that exposes of support component 5 is electrically connected by lead-in wire W3, and the top n side liner electrode 30b with infrared semiconductor laser element 30 that exposes of support component 5 is electrically connected by the W5 that goes between.

Thus, power pin 2 is electrically connected with n side liner electrode 10b, the n side liner electrode 20b of red semiconductor laser diode 20 of bluish violet semiconductor Laser device 10 and the n side liner electrode 30b of infrared semiconductor laser element 30.That is, realize the common cathode line of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.

By between the power pin 1a, 2, apply voltage respectively between the power pin 1b, 2 and between the power pin 1c, 2, but individual drive bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30.Thus, this routine semicondcutor laser unit 500 selectively penetrates bluish violet color laser, red laser and three kinds of laser of infrared laser.

Figure 47 is the circuit diagram of electric wiring of the semicondcutor laser unit 500 of expression the 11 execution mode.

As mentioned above, when power pin 2 is electrically connected with support component 5, be electrically connected with the n side liner electrode 10b of bluish violet semiconductor Laser device 10, the n side liner electrode 20b of red semiconductor laser diode 20 and the n side liner electrode 30b of infrared semiconductor laser element 30.

On the other hand, the p side liner electrode 30a and the support component 5 of the p side liner electrode 20a of the p side liner electrode 10a of bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30, be power pin 2 electric insulations.

Thus, in order to drive bluish violet semiconductor Laser device 10,, need apply the voltage higher to power pin 1a than earthing potential for power pin 2.In addition, in order to drive red semiconductor laser diode 20,, need apply the voltage higher to power pin 1b than earthing potential for power pin 2.And,,, need apply the voltage higher to power pin 1c than earthing potential for power pin 2 in order to drive infrared semiconductor laser element 30.

Like this, with regard to the semicondcutor laser unit 500 of the 11 execution mode, by applying the voltage higher to one of power pin 1a, 1b, 1c than earthing potential, but individual drive bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30.As a result, the driving voltage of each semiconductor Laser device control transfiguration is easy.

(3) auxiliary substrate and insulating barrier are as dielectric effect

In the 11 execution mode, when utilizing alternating voltage to drive bluish violet semiconductor Laser device 10, auxiliary substrate 31 is as dielectric.But the same with the 7th execution mode, the thickness of auxiliary substrate 31 is about 200 μ m, compares with the 0.5 μ m of electric current barrier layer 10c, and is obviously big.Therefore, the influence that causes of 31 pairs of bluish violet semiconductor Laser devices 10 of auxiliary substrate can be ignored basically.

On the other hand, when utilizing alternating voltage to drive red semiconductor laser diode 20, insulating barrier 34 is as dielectric.In the 11 execution mode, the shape of the first electric current barrier layer 20c that illustrates in the shape of the first electric current barrier layer 20c and the 7th execution mode is identical.In addition, the shape of the insulating barrier 32 that illustrates in the shape of insulating barrier 34 and the 7th execution mode is identical.

That is, the heat release of insulating barrier 34 is equivalent to the heat release insulating barrier 320 and the low capacitive insulation layer 321 of the insulating barrier 32 in the 7th execution mode with insulating barrier 340 and low capacitive insulation layer 341.As a result, fully suppress the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of the layer of insulating properties causes.

On the other hand, when utilizing alternating voltage to drive infrared semiconductor laser element 30, insulating barrier 35 is as dielectric.In the 11 execution mode, the shape of the first electric current barrier layer 20c that illustrates in the shape of the first electric current barrier layer 30c and the 7th execution mode is identical.In addition, the shape of the insulating barrier 32 that illustrates in the shape of insulating barrier 35 and the 7th execution mode is identical.

That is, the heat release of insulating barrier 35 is equivalent to the heat release insulating barrier 320 and the low capacitive insulation layer 321 of the insulating barrier 32 in the 7th execution mode with insulating barrier 350 and low capacitive insulation layer 351.As a result, fully suppress the deterioration of the high frequency characteristics of the infrared semiconductor laser element 30 that the influence because of the layer of insulating properties causes.

(4) effect of semicondcutor laser unit

(4-a) main effect

In the 11 execution mode, utilize thin heat release insulating barrier 340, can be in the electric insulation of guaranteeing between bluish violet semiconductor Laser device 10 and the red semiconductor laser diode 20, the local exothermicity that improves red semiconductor laser diode 20.Therefore, fully reduce the decline of exothermicity.

And, utilize thin heat release insulating barrier 350, can be in the electric insulation of guaranteeing between bluish violet semiconductor Laser device 10 and the infrared semiconductor laser element 30, the local exothermicity that improves infrared semiconductor laser element 30.Therefore, fully reduce the decline of exothermicity.

As mentioned above, in the semicondcutor laser unit 500 of the 11 execution mode, realize the common cathode line of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.Therefore, by the voltage higher than earthing potential is provided to one of power pin 1a, 1b, 1c, but individual drive bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30.

Thus, the control of the driving voltage of each semiconductor Laser device becomes easy.As a result, semicondcutor laser unit 500 selectively penetrates bluish violet color laser, red laser and three kinds of laser of infrared laser.

In the 11 execution mode, the capacitance that produces in the insulating barrier 34 is below the capacitance that produces among the first electric current barrier layer 20c.Thus, fully suppress the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of the layer of insulating properties causes.

In the 11 execution mode, the capacitance that produces in the insulating barrier 35 is below the capacitance that produces among the first electric current barrier layer 30c.Thus, fully suppress the deterioration of high frequency characteristics of the infrared semiconductor laser element 30 that causes of influence of the layer of insulating properties.

(4-b) other effect

In the 11 execution mode, also can on mutually the same substrate, make red semiconductor laser diode 20 and infrared semiconductor laser element 30.At this moment, red semiconductor laser diode 20 and infrared semiconductor laser element 30 can make the emitting red light point of red semiconductor laser diode 20 and infrared semiconductor laser element 30 and the spacing accuracy of infraluminescence point obviously improve by having monolithic construction.

12. the 12 execution mode

(1) formation of semicondcutor laser unit

The semicondcutor laser unit of the 12 execution mode is in the following areas with the formation of the semicondcutor laser unit 500 of the 11 execution mode and move different.The outward appearance of the semicondcutor laser unit of the 12 execution mode is the same with the 11 execution mode, and is identical with the semicondcutor laser unit 500 of Figure 41.

Figure 48 is the pattern front elevation that the state behind the lid 4 of semicondcutor laser unit of the 12 execution mode is taken off in expression, and Figure 49 schemes above the pattern of the state behind the lid 4 of the expression semicondcutor laser unit that takes off the 12 execution mode.

As shown in figure 48, with package main body 3 incorporate conductivity support components 5 on, what form conductivity is melting a layer H.Melting on the layer H, bonding bluish violet semiconductor Laser device 10 is so that n side liner electrode 10b constitutes support component 5 sides.

In the 12 execution mode, the width of bluish violet semiconductor Laser device 10 (Y direction) is about 800 μ m, and length (directions X) is about 600 μ m.

Form the p side liner electrode 10a of bluish violet semiconductor Laser device 10 in the subregion of electric current barrier layer 10c in being formed at semiconductor layer.The same with the 9th execution mode, the protrusion Ri of formation bluish violet semiconductor Laser device 10 under p side liner electrode 10a, electric current barrier layer 10c is by SiO ₂Constitute.

In addition, in the 12 execution mode, the subregion that forms p side liner electrode 10a be in the XY plane bluish violet semiconductor Laser device 10 whole sizes about 1/4.For example, the width (Y direction) of p side liner electrode 10a is approximately 200 μ m, and length (directions X) is approximately 600 μ m.In the semicondcutor laser unit 500 of Figure 48, p side liner electrode 10a forms band shape at the central portion of the bluish violet semiconductor Laser device 10 of Y direction.

On electric current barrier layer 10c, as described later, bonding red semiconductor laser diode 20 and infrared semiconductor laser element 30.This electric current barrier layer 10c is different with the thickness (Z direction) in other zone in the zone of the protrusion Ri of bonding red semiconductor laser diode 20.In addition, electric current barrier layer 10c is different with the thickness (Z direction) in other zone in the zone of the protrusion Ri of bonding infrared semiconductor laser element 30.

The same with the 9th execution mode, the part that the protrusion that will be positioned at red semiconductor laser diode 20 and infrared semiconductor laser element 30 forms the electric current barrier layer 10c in zone is called heat release with barrier layer 330.In addition, will be arranged in the part of electric current barrier layer 10c that protrusion forms the zone beyond the zone and be called low electric capacity barrier layer 331.

In the XY plane, with p side liner electrode 10a state at interval under, in other zone of electric current barrier layer 10c, form the conductive layer 36,37 that comprises Au.The formation zone of the conductive layer in the XY plane 36 is called first conductive layer forms the zone.The formation zone of the conductive layer in the XY plane 37 is called second conductive layer forms the zone.On the Y direction, p side liner electrode 10a forms between the zone at first and second conductive layers.

The width of conductive layer 36,37 (Y direction) all is approximately 280 μ m, and length (directions X) all is approximately 600 μ m.

On conductive layer 36, via layer bonding red semiconductor laser diode 20 of H that melting of AuSn formation, so that p side liner electrode 20a constitutes support component 5 sides.

On conductive layer 37, via layer bonding red semiconductor laser diode 30 of H that melting of AuSn formation, so that p side liner electrode 30a constitutes support component 5 sides.

The same with the 11 execution mode, red semiconductor laser diode 20 and infrared semiconductor laser element 30 have the width (Y direction) that is approximately 200 μ m, and have the length (directions X) that is approximately 600 μ m.

(2) electric wiring of semicondcutor laser unit

As Figure 48 and shown in Figure 49, power pin 1a, 1b, 1c utilize dead ring 1z and package main body 3 electric insulations respectively.

Power pin 1a is electrically connected through lead-in wire W5 and conductive layer 37.Thus, the p side liner electrode 30a of power pin 1a and infrared semiconductor laser element 30 is electrically connected.

Power pin 1b is electrically connected through lead-in wire W1 and conductive layer 36.Thus, the p side liner electrode 20a of power pin 1b and red semiconductor laser diode 20 is electrically connected.

Power pin 1c is electrically connected through the p side liner electrode 10a of lead-in wire W3 and bluish violet semiconductor Laser device 10.

The top n side liner electrode 20b with red semiconductor laser diode 20 that exposes of support component 5 is electrically connected by lead-in wire W2.The top n side liner electrode 30b with infrared semiconductor laser element 30 that exposes of support component 5 is electrically connected by lead-in wire W4.

In the 12 execution mode, the n side liner electrode 10b of bluish violet semiconductor Laser device 10 is electrically connected on the support component 5 through melting layer H.Thus, power pin 2 is electrically connected with n side liner electrode 10b, the n side liner electrode 20b of red semiconductor laser diode 20 of bluish violet semiconductor Laser device 10 and the n side liner electrode 30b of infrared semiconductor laser element 30.That is, realize the common cathode line of bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30.

By between the power pin 1c, 2, apply voltage respectively between the power pin 1b, 2 and between the power pin 1a, 2, but individual drive bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30.The electric wiring of the semicondcutor laser unit 500 of the 12 execution mode is identical with Figure 47.In addition, among Figure 47, the symbol of the power pin of the 12 execution mode is shown in the bracket.Like this, even if the semicondcutor laser unit 500 of the 12 execution mode, each semiconductor laser unit, 10,20,30 driving voltage control also becomes easy.

(3) the electric current barrier layer is as dielectric effect

When utilizing alternating voltage to drive red semiconductor laser diode 20, first conductive layer forms the electric current barrier layer 10c in zone as dielectric.Therefore, in the 12 execution mode, set that the capacitance that produces is below the capacitance that produces among the first electric current barrier layer 20c among the electric current barrier layer 10c that first conductive layer forms the zone for.

In the 12 execution mode, first conductive layer forms the zone, be that the shape of conductive layer 36 forms the zone with the conductive layer of the 9th execution mode, is that the shape of conductive layer 33 is identical.

Therefore, in this example, the shape of electric current barrier layer 10c that the shape set of electric current barrier layer 10c that first conductive layer is formed the zone must form the zone with the conductive layer in the 9th execution mode is identical.

At this moment, first conductive layer heat release conductive layer that is equivalent to the 9th execution mode with barrier layer 330 and low electric capacity barrier layer 331 that forms the zone forms the heat release usefulness barrier layer 330 and the low electric capacity barrier layer 331 in zone.As a result, fully suppress the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of the layer of insulating properties causes.

When utilizing alternating voltage to drive infrared semiconductor laser element 30, second conductive layer forms the electric current barrier layer 10c in zone as dielectric.Therefore, in the 12 execution mode, set that the capacitance that produces is below the capacitance that produces among the first electric current barrier layer 30c among the electric current barrier layer 10c that first conductive layer forms the zone for.

In the 12 execution mode, second conductive layer forms the zone, be that the shape of conductive layer 37 forms the zone with the conductive layer of the 9th execution mode, is that the shape of conductive layer 33 is identical.

Therefore, in this example, the shape of electric current barrier layer 10c that the shape set of electric current barrier layer 10c that second conductive layer is formed the zone must form the zone with the conductive layer in the 9th execution mode is identical.

At this moment, second conductive layer heat release conductive layer that is equivalent to the 9th execution mode with barrier layer 330 and low electric capacity barrier layer 331 that forms the zone forms the heat release usefulness barrier layer 330 and the low electric capacity barrier layer 331 in zone.As a result, fully suppress the deterioration of the high frequency characteristics of the infrared semiconductor laser element 30 that the influence because of the layer of insulating properties causes.

(4) effect of semicondcutor laser unit

(4-a) main effect

In the 12 execution mode, utilize thin heat release barrier layer 330, can be in the electric insulation of guaranteeing between bluish violet semiconductor Laser device 10 and the red semiconductor laser diode 20, the local exothermicity that improves red semiconductor laser diode 20.Therefore, fully reduce the decline of exothermicity.

And, utilize thin heat release barrier layer 330, can be in the electric insulation of guaranteeing between bluish violet semiconductor Laser device 10 and the infrared semiconductor laser element 30, the local exothermicity that improves infrared semiconductor laser element 30.Therefore, fully reduce the decline of exothermicity.

As mentioned above, in the semicondcutor laser unit 500 of the 12 execution mode, realize the common cathode line of bluish violet semiconductor Laser device 10 and red semiconductor laser diode 20.Therefore, by the voltage higher than earthing potential is provided to one of power pin 1a, 1b, 1c, but individual drive bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30.

Thus, the control of the driving voltage of each semiconductor Laser device becomes easy.As a result, semicondcutor laser unit 500 selectively penetrates bluish violet color laser, red laser and three kinds of laser of infrared laser.

In the 12 execution mode, the capacitance that produces among the electric current barrier layer 10c is below the capacitance that produces among the first electric current barrier layer 20c.Thus, fully suppress the deterioration of the high frequency characteristics of the red semiconductor laser diode 20 that the influence because of the layer of insulating properties causes.

In the 12 execution mode, the capacitance that produces among the electric current barrier layer 10c is below the capacitance that produces among the first electric current barrier layer 30c.Thus, the high frequency characteristics of the infrared semiconductor laser element 30 that causes of influence that fully suppresses the layer of insulating properties worsens.

(4-b) other effect

As mentioned above, in the semicondcutor laser unit 500 of the 12 execution mode, the p side liner electrode 10a that is configured to bluish violet semiconductor Laser device 10 is relative with p side liner electrode 20a, the 30a of red semiconductor laser diode 20 and infrared semiconductor laser element 30.

Thus, bluish violet semiconductor Laser device 10, red semiconductor laser diode 20 and infrared semiconductor laser element 30 luminous point separately can be configured on the roughly the same straight line in the YZ plane.

In the 12 execution mode, also can on mutually the same substrate, make red semiconductor laser diode 20 and infrared semiconductor laser element 30.At this moment, red semiconductor laser diode 20 and infrared semiconductor laser element 30 be by having monolithic construction, can make between the emitting red light point of red semiconductor laser diode 20 and infrared semiconductor laser element 30 and the infraluminescence point obviously to improve every precision.

13. the corresponding relation of each inscape of claim and each one of execution mode

In the 7th～the 12 execution mode, bluish violet color laser is equivalent to the light of first wavelength, bluish violet semiconductor Laser device 10 is equivalent to first semiconductor Laser device, red laser and infrared laser are equivalent to the light of second wavelength, and red semiconductor laser diode 20 and infrared semiconductor laser element 30 are equivalent to second semiconductor Laser device.

In addition, the part (with reference to Figure 31) that is positioned at protrusion Ri below in the MQW active layer 104 of bluish violet semiconductor Laser device 10 is equivalent to first optical waveguide, and the part (with reference to Fig. 9) that the MQW active layer 304 that is arranged in the part (with reference to Fig. 8) of protrusion Ri below and infrared semiconductor laser element 30 in the MQW active layer 204 of red semiconductor laser diode 20 is positioned at protrusion Ri below is equivalent to second optical waveguide.

And, insulating barrier 32,34,35 and electric current barrier layer 10c are equivalent to insulating barrier, laser penetrates end face 20T and is equivalent to light ejaculation end face, heat release is equivalent to the first of insulating barrier with insulating barrier 320,340,350 and heat release with barrier layer 330, and low capacitive insulation layer 321,341,351 and low electric capacity barrier layer 331 are equivalent to the second portion of insulating barrier.

In addition, electric current barrier layer 10c is equivalent to first current blocking layer, the first electric current barrier layer 20c, 30c are equivalent to second current blocking layer, n-GaN substrate 1s is equivalent to first substrate, semiconductor layer on the n-GaN substrate 1s is equivalent to first semiconductor layer, p side liner electrode 10a is equivalent to side's electrode of first, and n side liner electrode 10b is equivalent to the opposing party's electrode of first.

In addition, n-GaAs substrate 5X is equivalent to second substrate, semiconductor layer on the n-GaAs substrate 5X is equivalent to second semiconductor layer, p side liner electrode 20a and p side liner electrode 30a are equivalent to side's electrode of second, and n side liner electrode 20b and n side liner electrode 30b are equivalent to the opposing party's electrode of second.

Claims (25)

1, a kind of semicondcutor laser unit is characterized in that, comprises

The support component of conductivity;

Insulating barrier;

Be formed at the conductive layer on described insulating barrier one side's the face;

First semiconductor Laser device possesses first semiconductor layer that is formed on first substrate, is formed at side's electrode of first in described first semiconductor layer and is formed at the opposing party's electrode of first in described first substrate, penetrates the light of first wavelength; With

Second semiconductor Laser device possesses second semiconductor layer that is formed on second substrate, is formed at side's electrode of second in described second semiconductor layer and is formed at the opposing party's electrode of second in described second substrate, penetrates the light of second wavelength, wherein,

Described second semiconductor layer comprises current blocking layer, makes from side's electrode stream of described second electric current to narrow down to the opposing party's electrode of described second,

Described first semiconductor Laser device is set on described support component, makes side's electrode of described first be positioned at described support component side,

On the opposing party's electrode of described first of described first semiconductor Laser device, order is provided with described insulating barrier and described conductive layer,

Described second semiconductor Laser device is set on described conductive layer, makes that side's electrode of described second is electrically connected in described conductive layer,

The opposing party's electrode of described second and the opposing party's electrode of described first are electrically connected, and the capacitance that produces in described insulating barrier is below the capacitance that produces in the described current blocking layer.

2, semicondcutor laser unit according to claim 1 is characterized in that:

Capacitance 1/5 below of the capacitance that in described insulating barrier, produces in described current blocking layer, producing.

3, semicondcutor laser unit according to claim 1 is characterized in that:

Described first semiconductor Laser device has first optical waveguide,

Described second semiconductor Laser device has second optical waveguide,

The first that penetrates the described insulating barrier in territory, end face lateral areas corresponding to the light at least of described second optical waveguide has the high thermal conductivity of second portion than the described insulating barrier of removing described first.

4, semicondcutor laser unit according to claim 3 is characterized in that:

The described first of described insulating barrier has the thickness littler than described second portion.

5, semicondcutor laser unit according to claim 3 is characterized in that:

The described first of described insulating barrier comprises first material with first thermal conductivity, and the described second portion of described insulating barrier comprises second material with second thermal conductivity lower than described first.

6, a kind of semicondcutor laser unit is characterized in that, comprises

The support component of conductivity;

Insulating barrier;

Be formed at the conductive layer in a side the face of described insulating barrier;

First semiconductor Laser device possesses first semiconductor layer that is formed on first substrate, is formed at side's electrode of first in described first semiconductor layer and is formed at the opposing party's electrode of first in described first substrate, penetrates the light of first wavelength; With

Second semiconductor Laser device possesses second semiconductor layer that is formed on second substrate, is formed at side's electrode of second in described second semiconductor layer and is formed at the opposing party's electrode of second in described second substrate, penetrates the light of second wavelength,

Described first semiconductor layer comprises first current blocking layer, narrows down from side's electrode stream of described first electric current to the opposing party's electrode of described first,

Described second semiconductor layer comprises second current blocking layer, narrows down from side's electrode stream of described second electric current to the opposing party's electrode of described second,

Described first semiconductor Laser device is set on described support component, makes side's electrode of described first be positioned at described support component side,

On the opposing party's electrode of described first of described first semiconductor Laser device, order is provided with described insulating barrier and described conductive layer,

Described second semiconductor Laser device is set on described conductive layer, described second side's electrode and described conductive layer is electrically connected,

The opposing party's electrode of described second and the opposing party's electrode of described first are electrically connected,

The capacitance that produces in the described insulating barrier is below the medium and small side's of the capacitance that produces in described first current blocking layer and described second current blocking layer the capacitance.

7, semicondcutor laser unit according to claim 6 is characterized in that:

The capacitance that produces in the described insulating barrier is the medium and small side's of the capacitance that produces in described first current blocking layer and described second current blocking layer below 1/5 of capacitance.

8, semicondcutor laser unit according to claim 6 is characterized in that:

The capacitance that produces in the described insulating barrier is about below the 10pF.

9, semicondcutor laser unit according to claim 6 is characterized in that:

Described first semiconductor Laser device has first optical waveguide,

Described second semiconductor Laser device has second optical waveguide,

The first that penetrates the described insulating barrier in territory, end face lateral areas corresponding to the light at least of described second optical waveguide has the high thermal conductivity of second portion than the described insulating barrier of removing described first.

10, semicondcutor laser unit according to claim 9 is characterized in that:

The described first of described insulating barrier has the thickness littler than described second portion.

11, semicondcutor laser unit according to claim 9 is characterized in that:

The described first of described insulating barrier comprises first material with first thermal conductivity,

The described second portion of described insulating barrier comprises second material with second thermal conductivity lower than described first.

12, a kind of semicondcutor laser unit is characterized in that: comprise

The support component of conductivity;

Insulating barrier;

First semiconductor Laser device possesses first semiconductor layer that is formed on first substrate, is formed at side's electrode of first in described first semiconductor layer and is formed at the opposing party's electrode of first in described first substrate, penetrates the light of first wavelength; With

Second semiconductor Laser device possesses second semiconductor layer that is formed on second substrate, is formed at side's electrode of second in described second semiconductor layer and is formed at the opposing party's electrode of second in described second substrate, penetrates the light of second wavelength,

Described first semiconductor layer comprises first current blocking layer of insulating properties, narrows down from side's electrode stream of described first electric current to the opposing party's electrode of described first,

Described second semiconductor layer comprises second current blocking layer, narrows down from side's electrode stream of described second electric current to the opposing party's electrode of described second,

Described conductive layer is formed in the regulation zone of described first current blocking layer, with side's electrode insulation of described first,

Described first semiconductor Laser device is set on described support component, makes the opposing party's electrode of described first be positioned at described support component side,

Described second semiconductor Laser device is set on described conductive layer, described second side's electrode and described conductive layer is electrically connected,

The opposing party's electrode of described second and the opposing party's electrode of described first are electrically connected,

The capacitance that produces in first current blocking layer under the described conductive layer is below the capacitance that produces in described second current blocking layer.

13, semicondcutor laser unit according to claim 12 is characterized in that:

The capacitance that produces in first current blocking layer under the described conductive layer is below 1/5 of capacitance that produces in described second current blocking layer.

14, semicondcutor laser unit according to claim 12 is characterized in that:

Described first semiconductor Laser device has first optical waveguide,

Described second semiconductor Laser device has second optical waveguide,

The first that penetrates first current blocking layer under the described conductive layer in territory, end face lateral areas corresponding to the light at least of described second optical waveguide has the high thermal conductivity of second portion than first current blocking layer under the described conductive layer of removing described first.

15, semicondcutor laser unit according to claim 14 is characterized in that:

The described first of first current blocking layer under the described conductive layer has the thickness littler than described second portion.

16, semicondcutor laser unit according to claim 14 is characterized in that:

First current blocking layer, 1 described first under the described conductive layer comprises first material with first thermal conductivity,

The described second portion of first current blocking layer under the described conductive layer comprises second material with second thermal conductivity lower than described first.

17, semicondcutor laser unit according to claim 1 is characterized in that:

Also possess auxiliary substrate, insert between described support component and described first semiconductor Laser device, have specific thickness.

18, semicondcutor laser unit according to claim 1 is characterized in that:

Described first semiconductor Laser device comprises nitride-based semiconductor.

19, semicondcutor laser unit according to claim 1 is characterized in that:

Described first and second the opposing party's electrodes are when being electrically connected mutually, with described support component electric insulation.

20, semicondcutor laser unit according to claim 6 is characterized in that:

Also possess auxiliary substrate, insert between described support component and described first semiconductor Laser device, have specific thickness.

21, semicondcutor laser unit according to claim 6 is characterized in that:

Described first semiconductor Laser device comprises nitride-based semiconductor.

22, semicondcutor laser unit according to claim 6 is characterized in that:

Described first and second the opposing party's electrodes are when being electrically connected mutually, with described support component electric insulation.

23, semicondcutor laser unit according to claim 12 is characterized in that:

Also possess auxiliary substrate, insert between described support component and described first semiconductor Laser device, have specific thickness.

24, semicondcutor laser unit according to claim 12 is characterized in that:

Described first semiconductor Laser device comprises nitride-based semiconductor.

25, semicondcutor laser unit according to claim 12 is characterized in that:

Described first and second the opposing party's electrodes are when being electrically connected mutually, with described support component electric insulation.

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