CN1734730A - Be applicable to the aluminium/titanium/aluminium/nickel of gallium nitride device/golden ohmic contact system - Google Patents
Be applicable to the aluminium/titanium/aluminium/nickel of gallium nitride device/golden ohmic contact system Download PDFInfo
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Abstract
The present invention relates to technical field of semiconductors, particularly a kind of alloy system that is applicable to the novel ohmic contact Al/Ti/Al/Ni/Au of AlGaN/GaN HEMT device.The ohmic contact Al/Ti/Al/Ni/Au of new structure has very big process tolerance, can obtain satisfied ohmic contact characteristic in the situation of hanging down 680 ℃-760 ℃.There are very big range of choice the alloy temperature of this technology, alloy time, have reduced technology difficulty, have enlarged process tolerance, have improved the repeatability of technology.Obtain more satisfactory alloy pattern.These advantages are that existing other ohmic contact technology is not available.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of ohmic contact system that is applicable to the novel ohmic contact Al/Ti/Al/Ni/Au of AlGaN/GaN HEMT device.
Background technology
Current, the development of GaN device has become the research focus of compound devices circuit field, ohmic contact is the key technology of AlGaN/GaN device, its principle is that the ternary or the quaternary platform gold of the nitride of the Ga, the Ti that produce at semiconductor material surface and metal interface place and Al may be the contact material of low potential barrier, and the solid-state reaction between metal and AlGaN has also caused the heavy doping at metal/GaN interface in addition; The diffusion of overflowing of N makes the empty increase seized with terror of the N that plays alms giver's effect at the interface among the GaN simultaneously, has more increased the weight of this regional electron concentration, therefore can form good tunnel contact.Form good Ohmic contact.Because the greater band gap of GaN realizes difficulty of low resistance ohmic contact gear ratio usually, early stage research adopts single metal (Au, Al) of planting to obtain ohmic contact, and the contact resistivity on n-GaN is 10
-3～10
-4Ω cm
2, occur several new methods afterwards again and can obtain utmost point lower contact resistance, in the GaN ohmic contact, a kind of method is to adopt multiple layer metal to make the interface form the multicomponent alloy of low potential barrier or high doping content.
In the development of GaN device, the ohmic contact technology is one of key technology, and it directly influences the DC characteristic high frequency characteristics of device and circuit.For HEMT (the HEMT full name is " High Electron Mobility Transistor " (high electronic migrate transistor)) structure, the evaporation of metal of ohmic contact obtains ohmic contact by high temperature alloy on AlGaN.For the n-AlGaN ohmic contact, broad research be Ti/Al or Ti/Al improvement (as Al, Ti/Al, Ti/Au, Ti/Al/Ni/Au and Pd/Al) for the basis.Adopt these ohmic contact technology to realize relatively low contact resistance.Art methods often adopts different metal thickness and alloy condition for the HEMT material of different structure, and very harsh for the restriction of alloy condition.Overlong time is too short, extremes of temperature all will influence the performance of ohmic contact greatly.Bibliographical information all is Ti/Al/Ti/Au Ti/Al/Ni/Au basically, and alloy temperature causes technology difficulty to increase up to 800-950 ℃ even higher, and from existing result, pattern is often unsatisfactory behind the alloy, haves much room for improvement, and this is a ubiquitous problem in the development of GaN device.
The development process of ohmic contact is as follows at present
1.Ti/Al:(Ti/Al=0.3 900 ℃ of 15S 10 of alloy temperature
-4Ω cm
2) reaction of Ti and N, Al diffuses into gold/half interface, because Ti/Al is easy to oxidation, and impracticable, and pattern is bad, needs to improve.
2.Ti/Al/Au (600/1000/500 ) outer Au that covers stops the oxidation of Ti, Al.
3.Ti/Al/Ni/Au (150/2200/400/500 adds Ni (or Pt) owing to react between the Al/Au after the temperature rising, plays the barrier layer.(900 degree 30S, resistivity 10
-8Ω cm
2)
4.Ti/Al/Ti/Au because unnecessary Al may be excessive, make Ni into Ti and unnecessary Al reaction, form Ti-Al.
From the report result of document, the alloy temperature of ohmic contact, the formation of alloy time for ohmic contact characteristic have very big influence.
Summary of the invention
The invention relates to a kind of ohmic contact technology-five layer metal ohmic contact technology of new construction, be a key technology in the GaN element manufacturing, the present invention is the new technical method that forms in finishing the Chinese Academy of Sciences's great innovation item Microwave Devices ﹠ Circuits process.Specifically the invention belongs to the ohmic contact technology of AlGaN/GaN HEMT device, is a kind of ohmic contact of novel multi-layer metal structure.
The invention provides a kind of ohmic contact alloy technology of new construction, can the 680-760 degree between obtain to obtain the ohmic contact of more satisfactory unanimity.And the pattern of metal is more smooth behind the alloy, and bigger process choice scope has been arranged, and has reduced the requirement to process equipment.The ohmic contact system of a kind of novel ohmic contact Al/Ti/Al/Ni/Au of the AlGaN/GaN of being applicable to HEMT device is provided for this reason.
For achieving the above object, this ohm alloy system is by Al/Ti/Al/Ni/Au, metal adopt thermal evaporation, electron beam evaporation can, be Al/Ti/Al/Ni/Au successively in the part that contacts with AlGaN, be five-layer structure, be different from traditional four-layer structure.
The ohmic contact system is in 680--760 ℃ of scope, and the 20-60S scope obtains the ohmic contact of desirable unanimity.There are bigger range of choice alloy temperature, alloy time, have reduced technology difficulty, have improved the repeatability of technology.
Technical scheme
A kind of ohmic contact system of new construction, metal ohmic contact when evaporation adopt five-layer structure the AlTiAlNiAu structure, that form golden half interface with AlGaN is Al, is different from Al/Pt/Au, also is different from Ti/Al/Ti/Au.
The evaporation that contacts with AlGaN is followed successively by Al/Ti/Al/Ni/Au in proper order, adopts this structure, and the alloy pattern obviously improves.
The scope of alloy temperature is 660 ℃-760 ℃, and the alloy time is in the scope of 20---60S.
Description of drawings
Fig. 1 is the general structural representation of AlGaN/GaN HEMT.
Fig. 2 is the figure as a result that resist coating develops.
Fig. 3 is the figure as a result after the evaporating drain and source metals.
Fig. 4 is the order and the component figure of the metal of evaporation.
Fig. 5 is the schematic diagram after peeling off.
Fig. 6 is the figure as a result behind the alloy.
Fig. 7 is the ohmic contact test result figure under the Ti/Al/Ti/Au different condition.
Fig. 8 is the ohmic contact test result figure of Al/Ti/Al/Ni/Au of the present invention.
Fig. 9 is the I-V performance plot of the present invention under the different-alloy temperature.
Figure 10 is the shape appearance figure behind the alloy.
Embodiment
By description, further describe structure of the present invention, advantage and performance below in conjunction with accompanying drawing to specific embodiment, wherein:
Fig. 1 is the general structural representation of AlGaN/GaN HEMT, and ohmic contact will be made in the AlGaN surface shown in the figure.
Fig. 2 is the result that resist coating develops.
Fig. 3 is the result after the evaporating drain and source metals, evaporation Al/Ti/Al/Ni/Au.That traditional is ti/Al/Ni/Au.(300/200/900/400/2000)
Fig. 4 adopts five layers of Al/Ti/Al/Ni/Au metal structure for the order and the component of the metal of evaporation.For traditional Ti/Al/Ti/Au structure, the order of evaporation is Ti, Al, Ti, Au.
The left side is the alloy structure of traditional ohmic contact.The right side is the alloy structure of ohmic contact of the present invention.
Fig. 5 is the schematic diagram after peeling off.
Fig. 6 is the result behind the alloy.
Fig. 7 is the ohmic contact test result under the Ti/Al/Ti/Au different condition.I-V test result behind 700--830 ℃ of Ti/Al/Ti/Au alloy can see that tangible potential barrier is arranged.
Fig. 8 is the ohmic contact test result of Al/Ti/Al/Ni/Au of the present invention, 730 ℃.It has good I-V curve as can be seen.
I-V characteristic under Fig. 9 different-alloy temperature of the present invention
At 680 ℃--can obtain identical I-V characteristic in 760 ℃ of scopes.Therefore have bigger temperature range of choice, provided interior test result on a large scale, as can be seen, test result shows the big range of temperature that has of the present invention, and this is the advantage that existing ohmic contact technology is not had.
(left figure is: the right figure of Ti/Al/Ti/Au is pattern behind Figure 10 alloy: Al/Ti/Al/Ni/Au) be significantly improved.
Traditional structure, alloy temperature are up to 780 ℃ even 800 ℃, but the ohmic contact I-V characteristic behind its alloy and bad has potential barrier in the small voltage scope.And the pattern of alloy is unsatisfactory.
Five layers of ohmic contact alloy that the present invention adopts, at 680 ℃--the ohmic contact characteristic of comparison unanimity is arranged in 770 ℃ of scopes; At selected 730 ℃ of alloy temperatures, in 20---60 scope second, can obtain the I-V characteristic of comparison unanimity as can be seen,, the characteristic test of its ohmic contact is very desirable.Al/Ti/Al/Ni/Au structure proposed by the invention has reduced the needed alloy temperature of ohmic contact, has improved performance, has guaranteed the alloy pattern after the ohmic contact.
Claims (3)
1. the ohmic contact system of a new construction is characterized in that, metal ohmic contact when evaporation adopted the AlTiAlNiAu structure of five-layer structure, and that form golden half interface with AlGaN is Al.
2. the ohmic contact system of new construction according to claim 1 is characterized in that, the evaporation that contacts with AlGaN is followed successively by Al/Ti/Al/Ni/Au in proper order, adopts this structure, and the alloy pattern obviously improves.
3. according to the ohmic contact system of the new construction shown in the right 1, it is characterized in that the scope of alloy temperature is 660 ℃-760 ℃, the alloy time is in the scope of 20---60S.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100580357A CN100481346C (en) | 2004-08-09 | 2004-08-09 | Al/Ti/Al/Ni/Au ohmic contact system adapted to GaN device |
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|---|---|---|---|
| CNB2004100580357A CN100481346C (en) | 2004-08-09 | 2004-08-09 | Al/Ti/Al/Ni/Au ohmic contact system adapted to GaN device |
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|---|---|
| CN1734730A true CN1734730A (en) | 2006-02-15 |
| CN100481346C CN100481346C (en) | 2009-04-22 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148154A (en) * | 2010-12-21 | 2011-08-10 | 中国电子科技集团公司第五十五研究所 | Multilayer ohmic contact system of gallium nitride device with composite metal barrier layer |
| CN102593081A (en) * | 2011-01-12 | 2012-07-18 | 英飞凌科技股份有限公司 | Semiconductor device including a heat spreader |
| CN103077963A (en) * | 2013-01-07 | 2013-05-01 | 浙江大学 | Ohmic contact electrode, preparation method of ohmic contact electrode and semiconductor element comprising ohmic contact electrode |
| CN104362239A (en) * | 2014-11-19 | 2015-02-18 | 湘能华磊光电股份有限公司 | LED electrode structure and manufacturing method thereof |
| CN110459653A (en) * | 2019-08-22 | 2019-11-15 | 福建兆元光电有限公司 | A kind of interface metal structure and preparation method for flip-chip |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100286699B1 (en) * | 1993-01-28 | 2001-04-16 | 오가와 에이지 | Gallium Nitride Group 3-5 Compound Semiconductor Light-Emitting Device and Manufacturing Method Thereof |
| JP4494567B2 (en) * | 2000-01-11 | 2010-06-30 | 古河電気工業株式会社 | Method of forming electrode on n-type gallium nitride compound semiconductor layer |
-
2004
- 2004-08-09 CN CNB2004100580357A patent/CN100481346C/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148154A (en) * | 2010-12-21 | 2011-08-10 | 中国电子科技集团公司第五十五研究所 | Multilayer ohmic contact system of gallium nitride device with composite metal barrier layer |
| CN102593081A (en) * | 2011-01-12 | 2012-07-18 | 英飞凌科技股份有限公司 | Semiconductor device including a heat spreader |
| CN103077963A (en) * | 2013-01-07 | 2013-05-01 | 浙江大学 | Ohmic contact electrode, preparation method of ohmic contact electrode and semiconductor element comprising ohmic contact electrode |
| CN103077963B (en) * | 2013-01-07 | 2015-09-23 | 浙江大学 | A kind of Ohm contact electrode, its preparation method and comprise the semiconductor element of this Ohm contact electrode |
| CN104362239A (en) * | 2014-11-19 | 2015-02-18 | 湘能华磊光电股份有限公司 | LED electrode structure and manufacturing method thereof |
| CN104362239B (en) * | 2014-11-19 | 2017-02-08 | 湘能华磊光电股份有限公司 | LED electrode structure and manufacturing method thereof |
| CN110459653A (en) * | 2019-08-22 | 2019-11-15 | 福建兆元光电有限公司 | A kind of interface metal structure and preparation method for flip-chip |
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| Publication number | Publication date |
|---|---|
| CN100481346C (en) | 2009-04-22 |
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