CN1734728A - Be applicable to the ohmic contact system of the aluminium/titanium/aluminium/titanium/platinum/gold of gallium nitride device - Google Patents
Be applicable to the ohmic contact system of the aluminium/titanium/aluminium/titanium/platinum/gold of gallium nitride device Download PDFInfo
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- CN1734728A CN1734728A CN 200410058033 CN200410058033A CN1734728A CN 1734728 A CN1734728 A CN 1734728A CN 200410058033 CN200410058033 CN 200410058033 CN 200410058033 A CN200410058033 A CN 200410058033A CN 1734728 A CN1734728 A CN 1734728A
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Abstract
The present invention relates to technical field of semiconductors, particularly a kind of ohmic contact system that is applicable to the novel ohmic contact Al/Ti/Al/Ti/Pt/Au of AlGaN/GaN HEMT device.The ohmic contact Al/Ti/Al/Ti/Pt/Au of new structure, ohmic contact system are in 680 ℃ of-760 ℃ of scopes, and the 20-60S scope obtains the ohmic contact of desirable unanimity.There are bigger range of choice alloy temperature, alloy time, have reduced technology difficulty, have improved the repeatability of technology.Acquire more satisfactory alloy pattern, reduced the requirement of device development equipment.The advantage of these technical elements is that existing other ohmic contact technology is not available.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of ohmic contact system that is applicable to the novel ohmic contact Al/Ti/Al/Ti/Pt/Au of AlGaN/GaN HEMT device.
Background technology
1. current, the development of GaN device has become the research focus of compound devices circuit field, ohmic contact is the key technology of AlGaN/GaN device, its principle is that the ternary or the quaternary alloy of the nitride of the Ga, the Ti that produce at semiconductor material surface and metal interface place and Al may be the contact material of low potential barrier, and the solid-state reaction between metal and AlGaN has also caused the heavy doping at metal/AlGaN interface in addition; The diffusion of overflowing of N increases the N room of playing alms giver's effect at the interface among the GaN simultaneously, has more increased the weight of this regional electron concentration, therefore can form good Ohmic contact.
The ohmic contact technology is one of AlGaN/GaN HEMT (the HEMT full name is " High Electron Mobility Transistor " (high electronic migrate transistor)) structural key technology, and it directly influences DC characteristic, the high frequency characteristics of device and circuit.The evaporation of metal of ohmic contact obtains ohmic contact by high temperature alloy on AlGaN.For the n-AlGaN ohmic contact, broad research be Ti/Al or Ti/Al improvement (as Al, TlTi/Al, Ti/Au, Ti/Al/Ni/Au and Pd/Al) for the basis.
The development process of ohmic contact is as follows at present
1.Ti/Al:(Ti/Al=0.3 900 ℃ of 15S 10 of alloy temperature
-4Ω cm
2) reaction of Ti and N, Al diffuses into gold/half interface, because Ti/Al is easy to oxidation, and impracticable, and pattern is bad, needs to improve.
2.Ti/Al/Au (600/1000/500 ) outer Au that covers stops the oxidation of Ti, Al.
3.Ti/Al/Ni/Au (150/2200/400/500 ) adds Ni (or Pt) owing to react between the Al/Au after the temperature rising, plays the barrier layer.(900 ℃ of 30S, resistivity 10
-8Ω cm
2)
4.Ti/Al/Ti/Au because unnecessary Al may be excessive, make Ni into Ti, the Al reaction with unnecessary forms the Ti-Al alloy.
Art methods often adopts different metal thickness and alloy condition for the HEMT material of different structure, and very harsh for the requirement of alloy condition.The alloy overlong time is too short, extremes of temperature all will influence the performance of ohmic contact greatly.
Bibliographical information all is Ti/Al/Ti/Au Ti/Al/Ni/Au basically, and alloy temperature causes technology difficulty to increase up to 800 ℃-950 ℃ even higher, and from existing result, pattern is often unsatisfactory behind the alloy, haves much room for improvement, and this is a ubiquitous problem in the development of GaN device.Existing document generally believes, for the Ti/Al/Ti/Au structure, N among ground floor Ti and the AlGaN reacts when high temperature, thereby extraction N forms the N room like this on the surface of AlGaN, be equivalent to heavy doping, and TiN is a conductor simultaneously, Al plays the barrier layer, and the 3rd layer of Ti stops the reaction between Al, the Au, to guarantee pattern.But we find that by test this theory remains to be discussed.
Summary of the invention
The invention relates to a kind of ohmic contact technology-six layer metal ohmic contact technology of new construction, be a key technology in the GaN element manufacturing, the present invention is the new technical method that forms in finishing the Chinese Academy of Sciences's great innovation item Microwave Devices ﹠ Circuits process.Specifically the invention belongs to the ohmic contact technology of AlGaN/GaN HEMT device, is a kind of ohmic contact of novel multi-layer metal structure.
The invention provides a kind of ohmic contact alloy system of new construction, can 680 ℃-760 ℃ between obtain desirable consistent ohmic contact.And the pattern of metal is more smooth behind the alloy, and bigger process choice scope has been arranged, and has reduced the requirement to process equipment.The alloy system of a kind of novel ohmic contact Al/Ti/Al/Ti/Pt/Au of the AlGaN/GaN of being applicable to HEMT device is provided for this reason.
For achieving the above object, this ohm of alloy system is made of Al/Ti/Al/Ti/Pt/Au (300/200/900/400/500/2000 ), metal adopts thermal evaporation, electron beam evaporation can, in the part that contacts with AlGaN is Al/Ti/Al/Ti/Pt/Au successively, be six layers of structure, be different from traditional four-layer structure.
Based on a large amount of experimental facts, we think
1. have alloy reaction between ground floor Al and the AlGaN, its mechanism remains further research, and Al has also stopped excessive when high temperature alloy of Ga among the AlGaN in addition.Be equivalent to moving down of barrier layer Al, the AlGaN lattice structure when having guaranteed alloy stable.
2. after adding Ti, can form the low potential barrier Ti of higher temperature
xAl1
(1-x)Alloy has been avoided at high temperature excessive of Al, and has formed the alloy of low potential barrier, helps the formation of ohmic contact.
3. owing to become the structure of double sandwich between the AltiAlTi, Al can fully react with Ti when having guaranteed high temperature alloy, prevents the excessive of upper strata aluminium, obtains even more ideal metal pattern.
4. simultaneously, the adding of Pt better stops, and has stoped the formation of the AlAu alloy of high value, has guaranteed the alloy pattern.
5. this structure can both obtain desirable ohmic contact for the AlGaN/GaN HEMT (showing as Figure 12) of the doping and the two kinds of structures of not mixing.
The ohmic contact system is at 680 ℃---and in 760 ℃ of scopes, the 20-60S scope obtains the ohmic contact of desirable unanimity.There are bigger range of choice alloy temperature, alloy time, have reduced technology difficulty, have improved the repeatability of technology.The advantage of these technical elements is that existing other ohmic contact technology is not available.
Technical scheme
A kind of ohmic contact system of new construction, metal ohmic contact when evaporation adopt six layers of structure the AlTiAlTiPtAu structure, that form golden half interface with AlGaN is Al, is different from Al/Pt/Au, also is different from Ti/Al/Ti/Au.The thickness of each layer of Al/Ti/Al/Ti/Pt/Au has certain excursion.
The evaporation that contacts with AlGaN is followed successively by Al/Ti/Al/Ti/Pt/Au in proper order, adopts this structure, and the alloy pattern obviously improves.
The scope of alloy temperature is 660 ℃-760 ℃, and the alloy time is in the scope of 20---60S.
Description of drawings
Fig. 1 is the general structural representation of AlGaN/GaN HEMT.
Fig. 2 is the figure as a result that resist coating develops.
Fig. 3 is the figure as a result after the evaporating drain and source metals.
Fig. 4 is the order and the component figure of the metal of evaporation.
Fig. 5 is the schematic diagram after peeling off.
Fig. 6 is the figure as a result behind the alloy
Fig. 7 is the ohmic contact test result figure under the Ti/Al/Ti/Au different condition.
Fig. 8 is ohmic contact test result figure of the present invention.
Fig. 9 is 680---can obtain consistent I-V performance plot in the 760 degree scopes.
Figure 10 be when fixing 730 ℃ the alloy time source is leaked between the influence of I-V characteristic.
Figure 11 is the metal pattern comparison diagram behind the alloy.
The AlGaN/GaN figure of two kinds of different structures of Figure 12.
Embodiment
By description, further describe structure of the present invention, advantage and performance below in conjunction with accompanying drawing to specific embodiment, wherein:
Fig. 1 is the general structural representation of AlGaN/GaN HEMT, and ohmic contact will be made in the AlGaN surface shown in the figure.
Fig. 2 is the result that resist coating develops.
Fig. 3 is the result after the evaporating drain and source metals.
Fig. 4 adopts six layers of Al/Ti/Al/Ti/Pt/Au metal structure for the order and the component of the metal of evaporation.For traditional Ti/Al/Ti/Au structure, the order of evaporation is Ti, Al, Ti, Au.
Fig. 5 is the schematic diagram after peeling off.
Fig. 6 is the result behind the alloy.
Fig. 7 is the I-V test result of Ti/Al/Ti/Au structure ohmic contact, the ohmic contact test result under the Ti/Al/Ti/Au different condition.(700℃——830℃)
Fig. 8 is the ohmic contact test result of Al/Ti/Al/Ti/Pt/Au of the present invention.730℃
It is poor to this shows that Fig. 7 and Fig. 8 test result shown in the present is compared the I-V characteristic, has potential barrier.
Fig. 9 has provided the test result of the present invention in large-temperature range, and by figure nine as can be seen, the result that the present invention tested in 680 ℃ of-760 ℃ of scopes is more satisfactory.
Figure 10 has provided the excursion of alloy time, this shows, at 730 ℃, test result unanimity of the present invention in 20-60 scope second is better than existing ohmic contact technology.Under 730 ℃ of selected situations, obtain desirable I-V characteristic in the 20-60S scope.There is bigger range of choice the alloy time of the present invention, is better than the existing alloy system of general report.
Figure 11 provided behind the alloy the metal pattern relatively, the alloy pattern of Al/Ti/Al/Ti/Pt/Au is better than the pattern behind the Ti/Al/Ti/Au alloy as can be seen.(the right figure of left figure: Ti/Al/Ti/Au: Al/Ti/Al/Ti/Pt/Au)
The AlGaN/GaN of two kinds of different structures of Figure 12.
Traditional structure, alloy temperature are up to 780 ℃ even 800 ℃, but the ohmic contact I-V characteristic behind its alloy and bad in the small voltage scope potential barrier is arranged, and the pattern of alloy is unsatisfactory.
Five layers of ohmic contact alloy that the present invention adopts, at 680 ℃---the ohmic contact characteristic of comparison unanimity is arranged in 760 ℃ of degree scopes, at selected 730 ℃ of alloy temperatures, as can be seen 20---in 60 seconds scopes, can obtain the I-V characteristic of comparison unanimity, the characteristic test of its ohmic contact is very desirable.Al/Ti/Al/Ti/Pt/Au structure proposed by the invention has reduced the needed alloy temperature of ohmic contact, has improved performance, has guaranteed the alloy pattern after the ohmic contact.
Claims (3)
1. the ohmic contact system of a new construction is characterized in that, metal ohmic contact when evaporation adopted the AlTiAlTiPtAu structure of six layers of structure, and that form golden half interface with AlGaN is Al.
2. the ohmic contact system of new construction according to claim 1 is characterized in that, the evaporation that contacts with AlGaN is followed successively by Al/Ti/Al/Ti/Pt/Au in proper order, adopts this structure, and the alloy pattern obviously improves.
3. according to the ohmic contact system of the new construction shown in the right 1, it is characterized in that the scope of alloy temperature is 660 ℃-760 ℃, the alloy time is in the scope of 20---60S.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100580338A CN100485886C (en) | 2004-08-09 | 2004-08-09 | Al/Ti/Al/Ti/Pt/Au ohmic contact system adapted to GaN device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100580338A CN100485886C (en) | 2004-08-09 | 2004-08-09 | Al/Ti/Al/Ti/Pt/Au ohmic contact system adapted to GaN device |
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|---|---|
| CN1734728A true CN1734728A (en) | 2006-02-15 |
| CN100485886C CN100485886C (en) | 2009-05-06 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369599B (en) * | 2008-07-11 | 2011-02-16 | 北京大学 | Ohm contact of gallium nitride base device and preparation method thereof |
| CN105206524A (en) * | 2015-10-22 | 2015-12-30 | 中国科学院微电子研究所 | Method for preventing transverse diffusion of ohmic contact aluminum in GaN-based device |
| CN107919389A (en) * | 2016-10-10 | 2018-04-17 | 半导体元件工业有限责任公司 | Ohmic contact |
| CN108231565A (en) * | 2017-12-07 | 2018-06-29 | 华南理工大学 | The preparation method of the Ohmic contact of GaN high electron mobility transistor |
| CN108447780A (en) * | 2018-02-11 | 2018-08-24 | 厦门市三安集成电路有限公司 | A kind of ohmic contact structure of nitride compound semiconductor device and preparation method thereof |
| TWI646687B (en) * | 2017-10-30 | 2019-01-01 | 穩懋半導體股份有限公司 | OHMIC METAL FOR GaN DEVICE |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1450415A3 (en) * | 1993-04-28 | 2005-05-04 | Nichia Corporation | Gallium nitride-based III-V group compound semiconductor device |
| JP4494567B2 (en) * | 2000-01-11 | 2010-06-30 | 古河電気工業株式会社 | Method of forming electrode on n-type gallium nitride compound semiconductor layer |
-
2004
- 2004-08-09 CN CNB2004100580338A patent/CN100485886C/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369599B (en) * | 2008-07-11 | 2011-02-16 | 北京大学 | Ohm contact of gallium nitride base device and preparation method thereof |
| CN105206524A (en) * | 2015-10-22 | 2015-12-30 | 中国科学院微电子研究所 | Method for preventing transverse diffusion of ohmic contact aluminum in GaN-based device |
| CN107919389A (en) * | 2016-10-10 | 2018-04-17 | 半导体元件工业有限责任公司 | Ohmic contact |
| TWI646687B (en) * | 2017-10-30 | 2019-01-01 | 穩懋半導體股份有限公司 | OHMIC METAL FOR GaN DEVICE |
| CN108231565A (en) * | 2017-12-07 | 2018-06-29 | 华南理工大学 | The preparation method of the Ohmic contact of GaN high electron mobility transistor |
| CN108447780A (en) * | 2018-02-11 | 2018-08-24 | 厦门市三安集成电路有限公司 | A kind of ohmic contact structure of nitride compound semiconductor device and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN100485886C (en) | 2009-05-06 |
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Effective date of registration: 20200525 Address after: 610200 Sichuan Chengdu Shuangliu District Dongsheng Street Chengdu core industrial park concentration area Patentee after: China core Microelectronics Technology Chengdu Co., Ltd Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3, building 15, room 328 Patentee before: Beijing Zhongke micro Investment Management Co., Ltd. |