CN105206524A - Method for preventing transverse diffusion of ohmic contact aluminum in GaN-based device - Google Patents
Method for preventing transverse diffusion of ohmic contact aluminum in GaN-based device Download PDFInfo
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- CN105206524A CN105206524A CN201510690873.4A CN201510690873A CN105206524A CN 105206524 A CN105206524 A CN 105206524A CN 201510690873 A CN201510690873 A CN 201510690873A CN 105206524 A CN105206524 A CN 105206524A
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- Prior art keywords
- silicon nitride
- ohmic contact
- nitride medium
- ohmic
- aluminium element
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 53
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000009792 diffusion process Methods 0.000 title abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 61
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000000956 alloy Substances 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 11
- 239000004411 aluminium Substances 0.000 claims description 31
- 230000035755 proliferation Effects 0.000 claims description 26
- 229910052719 titanium Inorganic materials 0.000 claims description 20
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 4
- 239000011148 porous material Substances 0.000 abstract 4
- 229910002601 GaN Inorganic materials 0.000 description 16
- 238000010586 diagram Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a method for preventing transverse diffusion of ohmic contact aluminum in a GaN-based device. Ohmic contact aluminum is deposited in pores of a heat-resisting silicon nitride medium, transverse diffusion of ohmic contact aluminum is blocked by the heat-resisting silicon nitride medium, surface protection for ohmic alloy is further realized, and interface pollution and interface state are reduced. The method comprises: the heat-resisting silicon nitride medium grows on the surface of an epitaxial material; pores are formed in the high-temperature silicon nitride medium covering the area of an ohmic contact metal pattern; ohmic contact metal is evaporated in the formed pores of the silicon nitride medium to form metal stacking, wherein the upper surface of the silicon nitride medium is not lower than the upper surface of a stacked metal aluminum layer in the area of the formed pores. The method solves the problem of aluminum transverse diffusion in ohmic contact preparation of the GaN-based device, avoids the risk that the device performance is degraded due to a polluted material surface in a high-temperature alloy technology, further realizes surface protection of ohmic alloy, and reduces interface pollution and interface state.
Description
Technical field
The present invention relates to ohmic contact and passivation technology technical field in GaN base device, in especially a kind of GaN base device, stop the method for ohmic contact aluminium element horizontal proliferation.
Background technology
The metal ohmic contact system of main flow GaN base device is usually containing aluminum metal layer, the object of introduction aluminum metal layer is the resistivity in order to reduce ohmic contact, but current research finds aluminium element easy horizontal proliferation when high temperature alloy, at high temperature be oxidized and be deposited on the surface of epitaxial material, thus the surface state of epitaxial material is remained high, reduce device performance.
In addition, consider that alloy is greater than the ultra-high temperature condition of 800 DEG C, the silicon nitride medium of low-temperature epitaxy and gallium nitride material thermal mismatching are comparatively large, at high temperature easy to crack.Therefore, the present invention is based on classical ohmic contact system and propose improving countermeasure, adopt the silicon nitride medium sidewall of high growth temperature to stop aluminium element diffusion, and then realize the general protection to material surface, significantly reduce device interfaces and pollute and interfacial state level.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of method stoping the horizontal proliferation of ohmic contact aluminium element in GaN base device, to solve the problem occurring aluminium element horizontal proliferation in the preparation of GaN base device ohmic contact, metal ohmic contact is deposited in resistant to elevated temperatures silicon nitride medium hole by new technology, by the horizontal proliferation of dielectric impedance aluminium element.
(2) technical scheme
For solving the problems of the technologies described above; the invention provides a kind of method stoping the horizontal proliferation of ohmic contact aluminium element in GaN base device; the method is deposited on by ohmic contact aluminium element in resistant to elevated temperatures silicon nitride medium hole; the horizontal proliferation of ohmic contact aluminium element is stopped by silicon nitride medium; and then surface protection when realizing ohmic alloy, reduce interface pollution and interfacial state.
In such scheme, the method specifically comprises the following steps: step a: grow resistant to elevated temperatures silicon nitride medium at extension material surface; Step b: perforate is carried out to the silicon nitride medium covering ohmic metal graphics field; Step c: evaporate metal ohmic contact and form metal stack in the perforate of silicon nitride medium, wherein the upper surface of silicon nitride medium is not less than the upper surface of the metallic aluminum of metal stack in opening area.
In such scheme, resistant to elevated temperatures silicon nitride medium described in step a, adopt low-pressure chemical vapor phase deposition method (LPCVD) or rapid temperature chemical vapor deposit (RTCVD) at extension material surface grown silicon nitride medium, the high temperature of resistance at least 600 DEG C of this silicon nitride medium.
In such scheme, described in step b, perforate is carried out to the silicon nitride medium covering ohmic metal graphics field, be that the silicon nitride medium covering ohmic metal graphics field removes by the mode etched after adopting photoetching, form perforate.
In such scheme, the metal ohmic contact that evaporates in the perforate of silicon nitride medium described in step c forms metal stack, is the opening area adopting the mode of evaporation or sputtering various metals to be prepared into successively silicon nitride medium, forms metal stack.
In such scheme, the described various metals be prepared in the opening area of silicon nitride medium is followed successively by Ti, Al, Ni, Au from top to bottom, or is Ti, Al, Ti, Au, or is Ti, Al, TiN, or is Ti, Al, W.
(3) beneficial effect
As can be seen from technique scheme; the method of ohmic contact aluminium element horizontal proliferation is stoped in GaN base device provided by the invention; ohmic contact aluminium element is deposited in resistant to elevated temperatures silicon nitride medium hole; the horizontal proliferation of ohmic contact aluminium element is stopped by silicon nitride medium; solve in the preparation of GaN base device ohmic contact and occur aluminium element horizontal proliferation problem; thus avoid the risk of material surface pollution deterioration device performance in high temperature alloy technique; and then surface protection when achieving ohmic alloy, reduce interface pollution and interfacial state.
Accompanying drawing explanation
Fig. 1 is the method flow diagram stoping the horizontal proliferation of ohmic contact aluminium element in GaN base device provided by the invention.
Fig. 2 is the process chart stoping the horizontal proliferation of ohmic contact aluminium element in the GaN base device according to the embodiment of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1; Fig. 1 is the method flow diagram stoping the horizontal proliferation of ohmic contact aluminium element in GaN base device provided by the invention; the method is deposited on by ohmic contact aluminium element in resistant to elevated temperatures silicon nitride medium hole; the horizontal proliferation of ohmic contact aluminium element is stopped by silicon nitride medium; and then surface protection when realizing ohmic alloy; reduce interface pollution and interfacial state, the method specifically comprises the following steps:
Step a: grow resistant to elevated temperatures silicon nitride medium at extension material surface;
In this step, resistant to elevated temperatures silicon nitride medium adopts low-pressure chemical vapor phase deposition method (LPCVD) or rapid temperature chemical vapor deposit (RTCVD) at extension material surface grown silicon nitride medium, the high temperature of resistance at least 600 DEG C of this silicon nitride medium.
Step b: perforate is carried out to the silicon nitride medium covering ohmic metal graphics field;
In this step, perforate is carried out to the silicon nitride medium covering ohmic metal graphics field, be that the silicon nitride medium covering ohmic metal graphics field removes by the mode etched after adopting photoetching, form perforate.
Step c: evaporate metal ohmic contact and form metal stack in the perforate of silicon nitride medium, wherein the upper surface of silicon nitride medium is not less than the upper surface of metallic aluminum stacking in opening area;
In this step, in the perforate of silicon nitride medium, evaporate metal ohmic contact, be the opening area adopting the mode of evaporation or sputtering various metals to be prepared into successively silicon nitride medium, form metal stack; Wherein, the upper surface of silicon nitride medium be not less than the metal ohmic contact evaporated in opening area stacking in the upper surface of metallic aluminum; The various metals be prepared in the opening area of silicon nitride medium can be Ti, Al, Ni, Au successively from top to bottom, or be Ti, Al, Ti, Au, or is Ti, Al, TiN, or is Ti, Al, W etc.
Based on the method flow diagram stoping the horizontal proliferation of ohmic contact aluminium element in the GaN base device shown in Fig. 1, shown in Fig. 2 is the process chart stoping the horizontal proliferation of ohmic contact aluminium element in GaN base device according to the embodiment of the present invention, and the method comprises the following steps:
Step 1: adopt low-pressure chemical vapor phase deposition method (LPCVD) or rapid temperature chemical vapor deposit (RTCVD) at extension material surface grown silicon nitride medium, the high temperature of resistance at least 600 DEG C of this silicon nitride medium;
Step 2: adopt and the mode such as to etch after photoetching the silicon nitride medium covering ohmic metal graphics field is removed, form perforate;
Step 3: adopt the modes such as evaporation or sputtering various metals to be prepared into successively the opening area of silicon nitride medium, form metal stack, wherein, the upper surface of silicon nitride medium is not less than the upper surface of the metallic aluminum of metal stack in opening area; The various metals be prepared in the opening area of silicon nitride medium can be Ti, Al, Ni, Au successively from top to bottom, or be Ti, Al, Ti, Au, or is Ti, Al, TiN, or is Ti, Al, W etc.
As can be seen from above-described embodiment; the present invention be directed in the preparation of GaN base device ohmic contact and occur aluminium element horizontal proliferation problem and the new technology that proposes; metal ohmic contact is deposited in resistant to elevated temperatures silicon nitride medium hole by this technique; by the horizontal proliferation of dielectric impedance aluminium element; thus to the protection of extension material surface when achieving ohmic alloy, reduce interface pollution and interfacial state.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. in a GaN base device, stop the method for ohmic contact aluminium element horizontal proliferation; it is characterized in that; the method is deposited on by ohmic contact aluminium element in resistant to elevated temperatures silicon nitride medium hole; the horizontal proliferation of ohmic contact aluminium element is stopped by silicon nitride medium; and then surface protection when realizing ohmic alloy, reduce interface pollution and interfacial state.
2. stop the method for ohmic contact aluminium element horizontal proliferation in GaN base device according to claim 1, it is characterized in that, the method specifically comprises the following steps:
Step a: grow resistant to elevated temperatures silicon nitride medium at extension material surface;
Step b: perforate is carried out to the silicon nitride medium covering ohmic metal graphics field;
Step c: evaporate metal ohmic contact and form metal stack in the perforate of silicon nitride medium, wherein the upper surface of silicon nitride medium is not less than the upper surface of the metallic aluminum of metal stack in opening area.
3. in GaN base device according to claim 2, stop the method for ohmic contact aluminium element horizontal proliferation, it is characterized in that, resistant to elevated temperatures silicon nitride medium described in step a, adopt low-pressure chemical vapor phase deposition method (LPCVD) or rapid temperature chemical vapor deposit (RTCVD) at extension material surface grown silicon nitride medium, the high temperature of resistance at least 600 DEG C of this silicon nitride medium.
4. in GaN base device according to claim 2, stop the method for ohmic contact aluminium element horizontal proliferation, it is characterized in that, described in step b, perforate is carried out to the silicon nitride medium covering ohmic metal graphics field, be that the silicon nitride medium covering ohmic metal graphics field removes by the mode etched after adopting photoetching, form perforate.
5. in GaN base device according to claim 2, stop the method for ohmic contact aluminium element horizontal proliferation, it is characterized in that, the metal ohmic contact that evaporates in the perforate of silicon nitride medium described in step c forms metal stack, be the opening area adopting the mode of evaporation or sputtering various metals to be prepared into successively silicon nitride medium, form metal stack.
6. in GaN base device according to claim 5, stop the method for ohmic contact aluminium element horizontal proliferation, it is characterized in that, the described various metals be prepared in the opening area of silicon nitride medium is followed successively by Ti, Al, Ni, Au from top to bottom, or be Ti, Al, Ti, Au, or be Ti, Al, TiN, or be Ti, Al, W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510690873.4A CN105206524A (en) | 2015-10-22 | 2015-10-22 | Method for preventing transverse diffusion of ohmic contact aluminum in GaN-based device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510690873.4A CN105206524A (en) | 2015-10-22 | 2015-10-22 | Method for preventing transverse diffusion of ohmic contact aluminum in GaN-based device |
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| CN105206524A true CN105206524A (en) | 2015-12-30 |
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| CN201510690873.4A Pending CN105206524A (en) | 2015-10-22 | 2015-10-22 | Method for preventing transverse diffusion of ohmic contact aluminum in GaN-based device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447780A (en) * | 2018-02-11 | 2018-08-24 | 厦门市三安集成电路有限公司 | A kind of ohmic contact structure of nitride compound semiconductor device and preparation method thereof |
Citations (5)
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|---|---|---|---|---|
| US6143645A (en) * | 1997-02-03 | 2000-11-07 | Texas Instruments Incorporated | Reduced temperature contact/via filling |
| CN1525577A (en) * | 2003-02-25 | 2004-09-01 | 中国科学院半导体研究所 | Method for producing N-type layer ohmic contact electrode of GaN LED |
| CN1734728A (en) * | 2004-08-09 | 2006-02-15 | 中国科学院微电子研究所 | Be applicable to the ohmic contact system of the aluminium/titanium/aluminium/titanium/platinum/gold of gallium nitride device |
| CN101540297A (en) * | 2008-03-19 | 2009-09-23 | 中国科学院微电子研究所 | Method for manufacturing monolithic-integrated enhancement/depletion-type GaAs MHEMT annular oscillators |
| CN102830137A (en) * | 2012-08-31 | 2012-12-19 | 中国科学院微电子研究所 | Gallium nitride based liquid sensor and preparation method thereof |
-
2015
- 2015-10-22 CN CN201510690873.4A patent/CN105206524A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143645A (en) * | 1997-02-03 | 2000-11-07 | Texas Instruments Incorporated | Reduced temperature contact/via filling |
| CN1525577A (en) * | 2003-02-25 | 2004-09-01 | 中国科学院半导体研究所 | Method for producing N-type layer ohmic contact electrode of GaN LED |
| CN1734728A (en) * | 2004-08-09 | 2006-02-15 | 中国科学院微电子研究所 | Be applicable to the ohmic contact system of the aluminium/titanium/aluminium/titanium/platinum/gold of gallium nitride device |
| CN101540297A (en) * | 2008-03-19 | 2009-09-23 | 中国科学院微电子研究所 | Method for manufacturing monolithic-integrated enhancement/depletion-type GaAs MHEMT annular oscillators |
| CN102830137A (en) * | 2012-08-31 | 2012-12-19 | 中国科学院微电子研究所 | Gallium nitride based liquid sensor and preparation method thereof |
Non-Patent Citations (4)
| Title |
|---|
| MENGYUAN HUA等: ""650-V GaN-Based MIS-HEMTs Using LPCVD-SiNx as Passivation and Gate Dielectric"", 《POWER SEMICONDUCTOR DEVICES＆ IC’S(ISPSD),2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON》 * |
| MENGYUAN HUA等: ""Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs"", 《IEEE TRANSACTIONS ON ELECTRON DEVICES》 * |
| MENGYUAN HUA等: "GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Lower-Pressure Chemical Vapor Deposition SiNx as Gate dielectric", 《IEEE ELECTRON DEVICE LETTERS》 * |
| XINHUA WANG等: "Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer", 《IEEE ELECTRON DEVICE LETTERS》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447780A (en) * | 2018-02-11 | 2018-08-24 | 厦门市三安集成电路有限公司 | A kind of ohmic contact structure of nitride compound semiconductor device and preparation method thereof |
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Application publication date: 20151230 |
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