CN1731282A - A kind of image interference photoetching method and etching system thereof that adopts the grating combination - Google Patents
A kind of image interference photoetching method and etching system thereof that adopts the grating combination Download PDFInfo
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- CN1731282A CN1731282A CN 200410009403 CN200410009403A CN1731282A CN 1731282 A CN1731282 A CN 1731282A CN 200410009403 CN200410009403 CN 200410009403 CN 200410009403 A CN200410009403 A CN 200410009403A CN 1731282 A CN1731282 A CN 1731282A
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Abstract
A kind of image interference photoetching method and etching system thereof that adopts the grating combination, it is characterized in that using the grating combination of forming by a horizontal grating and vertical raster and rotate diaphragm and match, for the mask in the image interference etching system provides Y direction oblique illumination and directions X oblique illumination, make traditional image interference is engraved in needs to adjust light path system between three exposures complexity, time-consuming operation obtains simplifying, in whole exposure process, need only rotate diaphragm twice, just can finish imaging and interfere three times required exposure process of photoetching, system light path is simple, compact, the adjusting light path is easy, shorten the time shutter, improve the image interference photoetching exposure efficiency, help the practicability of image interference photoetching.
Description
Technical field
The present invention relates to a kind of image interference photoetching method and image interference etching system thereof that adopts the grating combination, belong to improvement the imaging Interferometric Lithography that produces Micropicture.
Background technology
General image interference etching system is by laser instrument, beam expander, compositions such as collimating apparatus, catoptron, mask, imaging optical system and resist substrate, for the first time after the exposure, adjust light path and carry out the exposure second time, after the exposure, adjust light path and expose for the third time for the second time, just can finish three times required exposures of image interference photoetching, also have the alignment issues of picture between three exposures.Document Steven R.J.Brueck, lmaging interferometric lithography, Microlithography World, winter 1998,2-10 and document Xiaolan Chen and S.R.J.Brueck, Imaging interferometriclithography:A wavelength division multiplex approach to extending opticallithography, J.Vac.Sci.Technol.B16 (6): 3392-3397, Nov./Dec has introduced the technology about image interference photoetching in 1998.These three times exposures are the exposure of vertical illumination mask, and in the exposure of directions X and direction oblique illumination mask.Between three exposures, light path adjustment and image alignment are difficult, and particularly three light paths are just not difficult and time-consuming more in a plane, reduced exposure efficiency.
Summary of the invention
The technical issues that need to address of the present invention are: the deficiency that overcomes existing method and system, provide a kind of between three exposures, only the rotation simply to rotate diaphragm for twice and just can finish three times that general image interference photoetching needs and expose, need not adjust light path and aligning betwixt, can reduce complicacy and the image alignment problem of adjusting light path, shorten the image interference photoetching method and the image interference etching system thereof of the exposure efficiency of time shutter and raising image interference photoetching.
The technical solution adopted in the present invention is: a kind of image interference photoetching method that adopts the grating combination is characterized in that comprising the following steps:
(1) a grating combination of being made up of horizontal grating and vertical raster is positioned between beam-expanding collimation device and the mask, is used for providing respectively Y direction oblique illumination light beam and directions X oblique illumination light beam;
(2) will rotate diaphragm again places before the combinations thereof grating;
(3) will rotate diaphragm and place 0 ° of initial position, and make directly to see through the parallel beam vertical irradiation mask that rotates the light hole in diaphragm and the grating combination, and be imaged onto on the resist substrate, realize the exposure of mask graph low frequency component by imaging optical system;
(4) will rotate diaphragm and rotate 90 ° for 0 ° from initial position, make and see through to rotate the diaphragm light hole and through the parallel beam directions X oblique illumination mask of thereafter vertical raster diffraction, and be imaged onto on the resist substrate by imaging optical system, realize that X exposes to high fdrequency component;
(5) will rotate diaphragm from 90 ° of 0 ° of backward rotation of initial position, make and see through to rotate the diaphragm light hole and through the parallel beam Y direction oblique illumination mask of thereafter horizontal optical grating diffraction, and be imaged onto on the resist substrate by imaging optical system, realize that Y exposes to high fdrequency component, thereby finish three times required exposures of image interference photoetching.
In addition, before rotating diaphragm, adopt variable optical attenuator to regulate the light intensity of three exposures, can improve picture contrast and resolution, improve picture quality.
Adopt the electric control system controls rotating mechanism accurately to rotate diaphragm, make it forward directions X oblique illumination position and Y direction oblique illumination position respectively to from initial position.
Rotating diaphragm is the circular or square light-proof material plate that can do to rotate in the plane around its center, have a circle or square light hole on it, except that light hole, rotate all blackings of remainder surface of diaphragm, scattered light and catoptrical interference from improving signal to noise ratio (S/N ratio) to weaken or to prevent.
Described grating combination also can be the combination of diffraction optical element, or the combination of holographic optical elements (HOE), or the combination of phase shifting mask.
Adopt the image interference etching system of said method, comprise laser instrument, the timing shutter, variable optical attenuator, the beam-expanding collimation device, rotate diaphragm RP, grating combination CG, mask, imaging optical system, the resist substrate, rotating mechanism and electric-control system thereof, the laser beam of being sent by laser instrument is by after regularly shutter and variable optical attenuator and the beam-expanding collimation device, be radiated on the combination grating by the light hole that rotates on the diaphragm, see through or the beam lighting mask of diffraction by grating combination, imaging optical system is imaged on mask on the resist substrate, resist is exposed, electric control system controls is rotated the rotating mechanism of diaphragm, make the rayed that sees through the rotation diaphragm at the diverse location that grating makes up, finish exposure process three times.
The present invention compares with existing method and system and has the following advantages:
(1) because dioptric systems such as the prism that the present invention adopts grating to make up to be replaced in traditional image interference etching system, catoptron provides vertical for the mask in the image interference etching system, X to tilt and Y to oblique illumination, finish three exposures, it is little, in light weight to have volume, light path need not be adjusted between the exposure, simple to operate, shorten the time shutter, improve advantages such as exposure efficiency.
(2) another characteristics of image interference etching system of the present invention are to have adopted the rotary machine by control circuit control to make the rotation diaphragm accurately rotate+90 ° and-90 ° respectively from original 0 ° of position, making the diaphragm light transmission part go up different piece with the grating combination respectively overlaps, to realize vertical illumination, directions X oblique illumination and the Y direction oblique illumination of mask, provide convenience for finishing three times required exposures of image interference photoetching, fast control accurately, improve exposure efficiency.
(3) the present invention in the image interference etching system with a variable optical attenuator can regulate respectively vertical illumination light, X to oblique illumination light and Y to the oblique illumination light intensity, thereby the exposure intensity of control high and low frequency component, optimization as intensity, obtains the more mask picture of high-quality by the final mask that obtains of intensity addition of three exposures.
(4) the present invention adopts automatically controlled rotating mechanism, accurately, the quick adjusting rotated diaphragm, and can control with the timing shutter synchronization, three exposure process of image interference photoetching accurately and are apace realized, for improving photolithographic exposure efficient, advance the significant and wide application prospect of practicability of image interference photoetching.
Description of drawings
Fig. 1 adopts the structural representation of the image interference etching system of grating combination for the present invention;
Fig. 2 adopts the coupling synoptic diagram of rotation diaphragm and grating combination in the image interference etching system of grating combination for the present invention, wherein Fig. 2 a is 0 ° of an initial position, rotates the diaphragm light hole this moment and makes up light hole with grating and overlap, for mask provides vertical illumination; Fig. 2 b rotates 90 ° for rotating diaphragm for 0 ° from initial position, and the illumination that rotation diaphragm light hole sees through is at vertical raster G
1On, for mask provides X to oblique illumination, Fig. 2 c is for rotating diaphragm from 90 ° of 0 ° of backward rotation of initial position, and the illumination that rotation diaphragm light hole sees through is at the horizontal grating G of grating combination
2On, for mask provides Y to oblique illumination.
Embodiment
As shown in Figure 1, method of the present invention comprises the following steps:
(1) a grating combination 6 of being made up of horizontal grating and vertical raster is positioned between beam-expanding collimation device 4 and the mask 7, is used for providing respectively Y direction oblique illumination light beam and directions X oblique illumination light beam;
(2) will rotate diaphragm 5 again places before the above-mentioned grating combination 6;
(3) when rotating diaphragm 5 when being in 0 ° of initial position, make directly by rotating the parallel beam vertical irradiation mask 7 of the light hole in diaphragm 5 and the grating combination 6, and be imaged onto on the resist substrate 9 by imaging optical system 8, realize the exposure of mask graph low frequency component;
(4) rotate diaphragm 5 and rotate 90 ° for 0 ° from initial position, make the light hole that sees through diaphragm 5 and through the parallel beam directions X oblique illumination mask 7 of thereafter vertical raster diffraction, and by imaging optical system imaging 8 to the resist substrate, realize that X exposes to high fdrequency component;
(5) will rotate diaphragm 5 again from 90 ° of 0 ° of backward rotation of initial position, make the light hole that sees through diaphragm 5 and through the parallel beam Y direction oblique illumination mask of thereafter horizontal optical grating diffraction, and be imaged onto on the resist substrate 9 by imaging optical system, realize that Y exposes to high fdrequency component, thereby finish three times required exposures of image interference photoetching.
As shown in Figure 1, a kind of image interference etching system of grating combination that adopts of the present invention includes laser instrument 1, timing shutter 2, variable optical attenuator 3, beam-expanding collimation device 4, rotation diaphragm 5, grating combination 6, mask 7, imaging optical system 8, resist substrate 9, rotating mechanism 10 and electric-control system 11.Control break-make and make-and-break times by the laser that laser instrument 1 sends by timing shutter 2, the laser beam of passing through is after variable optical attenuator 3, restrainting and be collimated into the uniform parallel beam in cross section by 4 expansions of beam-expanding collimation device shines on the rotation diaphragm 5, seeing through the collimated laser beam that rotates diaphragm 5 shines in the grating combination 6, when rotating diaphragm 5 and grating combination 6 when being in Fig. 2 a position, parallel beam vertical illumination mask 7, and by imaging optical system 8 mask 7 is imaged onto on the resist substrate 9, realize the low frequency component exposure.To rotate diaphragm by electric-control system 11 control rotating mechanisms 10 subsequently and rotate+90 °, promptly be in Fig. 2 b position, see through the vertical raster G that the collimated laser beam that rotates diaphragm 5 is radiated at the grating combination this moment
1On, by G
1A branch of light that diffraction produces is imaged onto the exposure that realizes the directions X high fdrequency component on the resist substrate 9 with the directions X inclination mode mask 7 that throws light on by imaging optical system 8.The rotating mechanism of being controlled by electric-control system 11 10 makes and rotates-90 ° of diaphragm rotations at last, promptly is in Fig. 2 C position, and the directional light that sees through rotation diaphragm 5 this moment is radiated at the horizontal grating G of grating combination 6
2On, by G
2A branch of light that diffraction produces is imaged onto on the resist substrate 9 by imaging optical system 8, in real time the exposure of Y direction high fdrequency component with the Y direction inclination mode mask 7 that throws light on.So finish three times required exposures of image interference photoetching.
In whole exposure process, according to light source, resist performance and imaging optical system parameter, rotate the make-and-break time of diaphragm and timing shutter by computer programming control, finish three exposures with the shortest time, improve exposure efficiency, suitably regulate the damping capacity of variable optical attenuator simultaneously, the high and low frequency component is rationally exposed, to obtain the optimum intersection figure quality.
Claims (8)
1, a kind of image interference photoetching method that adopts the grating combination is characterized in that comprising the following steps:
(1) a grating combination of being made up of horizontal grating and vertical raster is positioned between beam-expanding collimation device and the mask, is used for providing respectively Y direction oblique illumination light beam and directions X oblique illumination light beam;
(2) will rotate diaphragm again places before the above-mentioned grating combination;
(3) when rotating diaphragm when being in 0 ° of initial position, make directly by rotating the parallel beam vertical irradiation mask of the light hole in the combination of diaphragm and grating, and be imaged onto on the resist substrate by imaging optical system, realize the exposure of mask graph low frequency component;
(4) rotate diaphragm and rotate 90 ° for 0 °, make, and be imaged onto on the resist substrate, realize that X exposes to high fdrequency component by imaging optical system through the diaphragm light hole and through the parallel beam directions X oblique illumination mask of thereafter vertical raster diffraction from initial position;
(5) will rotate diaphragm again from 90 ° of 0 ° of backward rotation of initial position, make and see through the diaphragm light hole and through the parallel beam Y direction oblique illumination mask of thereafter horizontal optical grating diffraction, and be imaged onto on the resist substrate by imaging optical system, realize that Y exposes to high fdrequency component, thereby finish three times required exposures of image interference photoetching.
2, the image interference photoetching method of employing grating combination according to claim 1 is characterized in that: adopted variable optical attenuator to regulate the light intensity of three exposures before rotating diaphragm, can improve picture contrast and resolution, improve picture quality.
3, the image interference photoetching method of employing grating combination according to claim 1, it is characterized in that: adopt the electric control system controls rotating mechanism accurately to rotate diaphragm, make it forward directions X oblique illumination position and Y direction oblique illumination position respectively to from initial position.
4, the image interference photoetching method of employing grating combination according to claim 1, it is characterized in that: described rotation diaphragm is the circular or square light-proof material plate that can do to rotate in the plane around its center, a circle or square light hole are arranged on it, the remainder blacking of plate prevents to shine light scattering and reflection on it.
5, the image interference photoetching method of employing grating combination according to claim 1 is characterized in that: described grating combination also can be the combination of diffraction optical element, or the combination of holographic optical elements (HOE), or the combination of phase shifting mask.
6, adopt the grating combined imaging interference lithography system of the described method of claim 1, it is characterized in that: comprise laser instrument, the timing shutter, variable optical attenuator, the beam-expanding collimation device, rotate diaphragm, the grating combination, mask, imaging optical system, the resist substrate, rotating mechanism and electric-control system thereof, the laser beam of being sent by laser instrument is by after regularly shutter and variable optical attenuator and the beam-expanding collimation device, be radiated on the combination grating by the light hole that rotates on the diaphragm, see through or the beam lighting mask of diffraction by grating combination, imaging optical system is imaged on mask on the resist substrate, resist is exposed, electric control system controls is rotated the rotating mechanism of diaphragm, make the rayed that sees through the rotation diaphragm at the diverse location that grating makes up, finish exposure process three times.
7, a kind of image interference etching system that adopts the grating combination according to claim 6 is characterized in that: described grating combination also can be diffraction optical element, holographic optical elements (HOE), the combination of phase shifting mask.
8, a kind of image interference etching system that adopts the grating combination according to claim 6, it is characterized in that: described rotation diaphragm is the circular or square light-proof material plate that can do to rotate in the plane around its center, have a circle or square light hole on it, except that light hole, rotate all blackings of remainder surface of diaphragm, weaken or prevent the interference of scattered light and reflected light generation, improve signal to noise ratio (S/N ratio).
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100094039A CN100510964C (en) | 2004-08-05 | 2004-08-05 | An imaging interference photo etching method adopting grating combination and photo etching system therefor |
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| CNB2004100094039A CN100510964C (en) | 2004-08-05 | 2004-08-05 | An imaging interference photo etching method adopting grating combination and photo etching system therefor |
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| CN1731282A true CN1731282A (en) | 2006-02-08 |
| CN100510964C CN100510964C (en) | 2009-07-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101128917B (en) * | 2005-02-25 | 2011-11-23 | 株式会社尼康 | Exposure method and apparatus, and electronic component manufacturing method, illumination optical device |
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| US4541712A (en) * | 1981-12-21 | 1985-09-17 | Tre Semiconductor Equipment Corporation | Laser pattern generating system |
| CN2432001Y (en) * | 2000-06-21 | 2001-05-30 | 中国科学院光电技术研究所 | Laser interference photoetching system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101128917B (en) * | 2005-02-25 | 2011-11-23 | 株式会社尼康 | Exposure method and apparatus, and electronic component manufacturing method, illumination optical device |
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