CN1730382A - Carbon tube nanometer tube figuring technique - Google Patents
Carbon tube nanometer tube figuring technique Download PDFInfo
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- CN1730382A CN1730382A CN 200510086335 CN200510086335A CN1730382A CN 1730382 A CN1730382 A CN 1730382A CN 200510086335 CN200510086335 CN 200510086335 CN 200510086335 A CN200510086335 A CN 200510086335A CN 1730382 A CN1730382 A CN 1730382A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 17
- 238000007519 figuring Methods 0.000 title claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- 239000004411 aluminium Substances 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000005266 casting Methods 0.000 claims abstract description 8
- 239000006185 dispersion Substances 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 238000013461 design Methods 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- RCEAADKTGXTDOA-UHFFFAOYSA-N OS(O)(=O)=O.CCCCCCCCCCCC[Na] Chemical compound OS(O)(=O)=O.CCCCCCCCCCCC[Na] RCEAADKTGXTDOA-UHFFFAOYSA-N 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- 239000006193 liquid solution Substances 0.000 claims description 3
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000010445 mica Substances 0.000 claims description 2
- 229910052618 mica group Inorganic materials 0.000 claims description 2
- 150000004965 peroxy acids Chemical class 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 6
- 239000002094 self assembled monolayer Substances 0.000 abstract description 5
- 238000007306 functionalization reaction Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000001282 organosilanes Chemical class 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 238000001556 precipitation Methods 0.000 abstract 1
- 238000001338 self-assembly Methods 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical class OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 7
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 6
- 238000004062 sedimentation Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000013545 self-assembled monolayer Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000002238 carbon nanotube film Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical class CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000000640 hydroxylating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
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Abstract
The invention discloses a process for graph carbon nanometer tube, belongs to field of nanometer science and technology. The said means mainly uses the force of functionalization organosilane self assembling monolayer film surface force to the carbon nanometer tube in the DMF and the SDS dispersion to graph the single, multilayer film or array of the carbon nanometer tube. Forming graph on the surface in photoetching process, and then assembling different self assembly film on the different surface or area of the gragh, forming single-layer or multilayer construction graph carbon nanometer tube in precipitation and casting art work using the nature of different area and different surface of the graph film. The means can easily form carbon nanometer tube graph on glass, silicon chip or plastic, and also can form carbon nanometer tube array graph on aluminium and other metal. The invention is provided with latent application value in artwork of making panel display screen, transistor, and chemical and biology sensor and semiconductor device.
Description
Technical field
The present invention relates to a kind of carbon tube nanometer tube figuring technique that is widely used in the minute manufacturing, belong to the nanometer science and technology field based on self-assembled film.
Background technology
1991, the Iijima of Japan found multi-walled carbon nano-tubes (MWNT) first, and diameter is 4-30nm, and length is 1um.SWCN also was found (SWNT) in 1993, and diameter is from 0.4nm to 3-4nm, and length can reach several microns.CNT has unique electronics, machinery and chemical property, has a wide range of applications in fields such as machinery, electrochemistry, the energy, display devices.CNT has two unique excellent electric properties, and one is an emission characteristic, and another is the double electrical property of CNT.The electric property of these two uniquenesses makes this new material have a good application prospect on microelectronics.
Structure needs a kind of method of controlling the location of CNT based on the electronic device of CNT, the someone utilizes AFM to handle and makes carbon nanotubes positioned at present, but efficient is very low, another kind method is to allow CNT grow on graphical catalyst, because the growth of CNT generally needs very high temperature, this has very big restriction to substrate. publication numbers 1502553 is carbon nano-tubes in graphical substrate.Publication numbers 1500715 mainly is to form the carbon tube nanometer tube figuring film by the reaction location the group of CNT end and surface.The organosilicon derivates self-assembled monolayer is high-sequential and has directionality, both can interact with a lot of groups in alkyl chain, also can carry out chemical reaction at the tail end of chain, and can make substrate present electric charge.Its this specific character makes the flexible design of molecular level become possibility, and for the research special interaction in interface provides feasibility, because organosilan can be at substrate SiO
2, Al
2O
3Deng the high-quality chlorosilane self-assembled monolayer of formation, and have unique stability, silane remains finishing and surface-functionalized ideal material.CNT is easy to deposit to 3-aminopropyltriethoxywerene werene (APTES) the self-assembled film surface of amino surface in the dispersion liquid, and is difficult to deposit to octadecyl trichlorosilane (OTS) the self-assembled film surface on methyl surface.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art and the method that realizes carbon tube nanometer tube figuring is provided under a kind of normal temperature.
A kind of carbon tube nanometer tube figuring technique that the present invention proposes, described method, it is characterized in that: this method is to handle by substrate surface assembling organosilan is carried out chemistry functional derived from assembling film at normal temperatures, adopts depositing operation and casting process to form graphing carbon nanotube then.Its processing step is:
(1) with CNT at lauryl sodium sulfate aqueous solution or N, dinethylformamide disperses ultrasonic dispersion, and is centrifugal then, gets upper strata limpid CNT dispersion liquid solution;
(2) on substrate, be coated with one deck photoresist, photoresist exposed, the base part assembling methyl surface self-assembled film that behind exposure imaging, exposes according to big or small striped of the different size of prior design and dot pattern;
(3) silicon chip of step 2 having been assembled methyl surface self-assembled film steeps in the acetone remaining photoresist is removed photoresist, again assembling amino surface self-assembled film above the silicon chip after removing photoresist;
(4) use depositing operation and casting process to realize the graphical of CNT respectively through the silicon base of graphical function treatment step 3.
In above-mentioned carbon tube nanometer tube figuring technique, the described CNT of step 1 is through purifying process processing such as peracid boil.
In above-mentioned carbon tube nanometer tube figuring technique, the film forming substrate of the described self-assembled film of step 1 is a silicon chip, metallic aluminium, glass, mica, alundum (Al, silica substrate.
The present invention mainly carries out chemistry functional by self-assembled monolayer that substrate surface assembling organosilan is derived and handles, patterned self-assembled film is to CNT selective absorption in the CNT dispersion liquid, realize the plane positioning of CNT, make CNT on template, form pattern structure.Different surfaces group self-assembled film is to substrate surface chemistry graphical treatment, utilize different surfaces functional group self-assembled film to locate CNT with the different interactions of CNT, with the amino surface zone of CNT controllable deposition, realize the graphical of CNT to patterned surface.Method of the present invention has potential using value in making panel display screen, transistor, chemistry and technologies such as biology sensor, semiconductor device.
Description of drawings
Fig. 1 is a patterned self-assembled film schematic surface of the present invention.
Fig. 2 is a casting process schematic representation of the present invention.
Fig. 3 is a depositing operation schematic diagram of the present invention.
Fig. 4 is the SEM shape appearance figure behind the pattern sedimentation CNT on the silicon base of the present invention.
Fig. 5 is the SEM shape appearance figure behind the pattern sedimentation CNT of aluminium substrate of the present invention.
Fig. 6 is the pattern SEM figure of CNT of the present invention after aluminium substrate and OTS figure casting technology.
The specific embodiment
Below in conjunction with embodiment method of the present invention is described further:
The solution preparation that the present invention is used for the self-assembled film film forming is respectively:
The proportioning of the self-assembled film octadecyl trichlorosilane solution of methyl functionalization is as follows:
70 milliliters of hexadecanes;
10 milliliters of carbon tetrachloride;
2 milliliters of anhydrous chloroforms, 3 milliliters of carbon tetrachloride are mixed with 5 ml deionized water, leave standstill 24 hours after, get 2 milliliters of water saturated chlorinated solutions of lower floor; 200 microlitre octadecyl trichlorosilanes.Film formation time 2 hours
The self-assembled monolayer 3-aminopropyltriethoxywerene werene of amino functional
The proportioning of solution as follows: 50 milliliters of absolute methanols; 2 ml deionized water; 2 milliliters of acetate; 1 milliliter of 3-aminopropyltriethoxywerene werene.
Film formation time 2 hours.
With lauryl sodium sulfate aqueous solution or the N of CNT at concentration 1wt% (mass percent), dinethylformamide disperses ultrasonic dispersion 3 hours, then 3000 rev/mins centrifugal three hours, get upper strata limpid CNT dispersion liquid solution.
Embodiment 1
The pattern sedimentation of silicon base CNT:
Adopt monocrystalline silicon piece N (100) as substrate, be coated with one deck Megaposit SPR6112B photoresist in the above, different size size striped and dot pattern according to prior design expose to photoresist, the silicon chip that exposes behind exposure imaging is partly assembled OTS methyl surface self-assembled film, and then steep the acetone the inside remaining photoresist is removed photoresist, assemble APTES amino surface self-assembled film again above the silicon chip after removing photoresist.So just formed patterned self-assembled film surface (as shown in Figure 1).
The dispersion liquid deposition (as shown in Figure 3) 16 hours that the silicon base of graphical function treatment immerses the SDS aqueous solution or DMF CNT respectively, clean with deionized water or absolute methanol respectively after the taking-up, nitrogen dries up.
Embodiment 2
The pattern sedimentation of the CNT of electrode aluminium substrate:
Adopt monocrystalline silicon piece N (100) as substrate, sputter one deck Al above the silicon chip after cleaning, on Al, be coated with one deck Megaposit SPR6112B photoresist then, different size size striped and dot pattern according to prior design expose to photoresist, Al to exposed portion corrodes (phosphoric acid corrosion) then, partly assemble OTS methyl surface self-assembled film eroding the silicon chip that Al exposes, and then bubble is gone into the acetone the inside photoresist on Al surface is removed photoresist, assemble APTES amino surface self-assembled film again above the Al after removing photoresist, form the figure (as shown in Figure 1) of different surfaces self-assembled film.
Patterned substrate was immersed in the SDS aqueous solution or the DMF CNT dispersion liquid 16 hours, take out then respectively and clean with deionized water or absolute methanol, nitrogen dries up, and realizes the pattern sedimentation of CNT.Used graphic designs is respectively 20 μ m in the experiment, the wide striped of 10 μ m, the grid dot matrix of the grid dot matrix of 10 μ m*10 μ m and 4 μ m*4 μ m.
Embodiment 3
The graphical casting technology of the CNT of aluminium electrode basement obtains the graphing carbon nanotube film.
Adopt monocrystalline silicon piece N (100) as substrate, sputter one deck Al above the silicon chip after cleaning, on Al, be coated with one deck Megaposit SPR6112B photoresist then, according to self-designed different size size striped and dot pattern photoresist is exposed, Al to exposed portion corrodes then, partly assemble OTS methyl surface self-assembled film eroding the silicon chip that Al exposes, and then bubble is gone into the acetone the inside photoresist on Al surface is removed photoresist, hydroxylating again forms the figure (as shown in Figure 1) of hydrophobic OTS film and hydrophilic aluminium.
Claims (3)
1, a kind of carbon tube nanometer tube figuring technique, it is characterized in that: described method is to handle by substrate surface assembling organosilan is carried out chemistry functional derived from assembling film at normal temperatures, adopt depositing operation and casting process to form the CNT figure to substrate then, its processing step is:
(1) with CNT at lauryl sodium sulfate aqueous solution or N, dinethylformamide disperses ultrasonic dispersion, and is centrifugal then, gets upper strata limpid CNT dispersion liquid solution;
(2) on substrate, be coated with one deck photoresist, photoresist exposed, the base part assembling methyl surface self-assembled film that behind exposure imaging, exposes according to big or small striped of the different size of prior design and dot pattern;
(3) substrate of step 2 having been assembled methyl surface self-assembled film is steeped in the acetone and remaining photoresist is removed photoresist assembling amino surface self-assembled film above the substrate of exposing again after being removed photoresist;
(4) use depositing operation and casting process to realize the graphical of CNT respectively through the substrate of graphical function treatment step 3.
2, according to the described carbon tube nanometer tube figuring technique of claim 1, it is characterized in that: the described CNT of step 1 is through purifying process processing such as peracid boil.
3, according to the described carbon tube nanometer tube figuring technique of claim 1, it is characterized in that: the film forming substrate of the described self-assembled film of step 1 is a silicon chip, metallic aluminium, glass, mica, alundum (Al, silica substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100863350A CN100469684C (en) | 2005-09-02 | 2005-09-02 | Carbon tube nanometer tube figuring technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100863350A CN100469684C (en) | 2005-09-02 | 2005-09-02 | Carbon tube nanometer tube figuring technique |
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| Publication Number | Publication Date |
|---|---|
| CN1730382A true CN1730382A (en) | 2006-02-08 |
| CN100469684C CN100469684C (en) | 2009-03-18 |
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|---|---|---|---|
| CNB2005100863350A Expired - Fee Related CN100469684C (en) | 2005-09-02 | 2005-09-02 | Carbon tube nanometer tube figuring technique |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102153367A (en) * | 2009-12-01 | 2011-08-17 | 乐金显示有限公司 | Carbon nano tube dispersion liquid, manufacturing method of thin layer and display panel of the same |
| CN102324350A (en) * | 2011-08-07 | 2012-01-18 | 张研 | Orientated-growth latticed high-performance carbon nano-tube field emission array |
| CN102557014A (en) * | 2010-12-30 | 2012-07-11 | 国家纳米科学中心 | Method for forming patterns of graphene oxide and patterns of graphene |
| CN115724421A (en) * | 2021-08-23 | 2023-03-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Oriented carbon nanotube array structure and preparation method and application thereof |
-
2005
- 2005-09-02 CN CNB2005100863350A patent/CN100469684C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102153367A (en) * | 2009-12-01 | 2011-08-17 | 乐金显示有限公司 | Carbon nano tube dispersion liquid, manufacturing method of thin layer and display panel of the same |
| CN102557014A (en) * | 2010-12-30 | 2012-07-11 | 国家纳米科学中心 | Method for forming patterns of graphene oxide and patterns of graphene |
| CN102557014B (en) * | 2010-12-30 | 2014-09-24 | 国家纳米科学中心 | Method for forming patterns of graphene oxide and patterns of graphene |
| CN102324350A (en) * | 2011-08-07 | 2012-01-18 | 张研 | Orientated-growth latticed high-performance carbon nano-tube field emission array |
| CN102324350B (en) * | 2011-08-07 | 2013-12-04 | 上海康众光电科技有限公司 | Orientated-growth latticed high-performance carbon nano-tube field emission array and preparation method |
| CN115724421A (en) * | 2021-08-23 | 2023-03-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Oriented carbon nanotube array structure and preparation method and application thereof |
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| Publication number | Publication date |
|---|---|
| CN100469684C (en) | 2009-03-18 |
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