CN102324350B - Orientated-growth latticed high-performance carbon nano-tube field emission array and preparation method - Google Patents
Orientated-growth latticed high-performance carbon nano-tube field emission array and preparation method Download PDFInfo
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- CN102324350B CN102324350B CN2011102242016A CN201110224201A CN102324350B CN 102324350 B CN102324350 B CN 102324350B CN 2011102242016 A CN2011102242016 A CN 2011102242016A CN 201110224201 A CN201110224201 A CN 201110224201A CN 102324350 B CN102324350 B CN 102324350B
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Abstract
The invention discloses an orientated-growth latticed high-performance carbon nano-tube field emission array, which comprises a conductive substrate and latticed orientated carbon nano-tube arrays grown on the substrate, wherein the carbon nano-tube arrays are distributed into a latticed shape and form an integral structure. By the technical scheme, the structural stability of small-size carbon nano-tube arrays is improved, the edge effect of the carbon nano-tube arrays is enhanced, and then a turn-on electric field and a threshold electric field are reduced to improve the emission current density. The orientated-growth latticed high-performance carbon nano-tube field emission array is suitable for field emission devices having high requirements on current emission performance, such as electron sources in an X ray source, a microwave amplifier, a field emission scanning electron microscope and the like.
Description
Technical field
The present invention relates to a kind of field emission component and preparation method, especially the preparation method of field-transmitting cathode.
Technical background
Carbon nano-tube is one of main material of current field emission component research, has very bright prospect, and each large scientific research institution is all in positive effort, to realize practical application and the industrialization of carbon nano-tube in feds in the world.In current carbon nano-tube and relevant research field thereof, new structure, material and process are still in constantly exploring.Yet on the other hand, existing emissive material, device architecture have all reached tens of kinds more than.For the exploration of the working mechanism of these nano-tube material cold cathodes, for abundant excavation and the utilization of the Potential performance of existing device architecture, it is still very important research contents.
For example, in the preparation of high current density feds (cold cathode X-ray tube and microwave amplifier), distributing homogeneity and orientation for carbon nano-tube emitting cathode array are had relatively high expectations, and the directional carbon nanotube array negative electrode is because of favorable orientation, the field emission performance excellence has very large application potential.Yet, research for carbon nano pipe array does not make it obtain practical application widely so far, still have many weak points to inquire into and to improve, the relation of the factors such as its electron emissivity and array structure, kind, pattern still needs to obtain further clear and definite simultaneously.
Directly firm at carbon nano-tube film array and the substrate contact of Grown, be easy to obtain good orientation.Obtain the figure of catalyst by methods such as photoetching, shadow mask mask (Shadow Mask), electron beam lithographies, adopt again TCVD or the growth of PECVD method, carbon nano-tube only grows at the position that catalyst is arranged, and can obtain in good order carbon nano pipe array [44] uniformly.At present, because cost is lower, applicable substrate scope is wide, and therefore the hot phase chemical depositions that adopt prepare directional carbon nanotube array more.
Yet, in carbon nano pipe array prepared by the employing hot phase chemical deposition of bibliographical information pattern unit diameter greatly about tens microns left and right.Because the field emission of carbon nano pipe array mainly concentrates on edge, if therefore in carbon nano pipe array, the area of pattern unit is too large, has just caused the waste of area.
Summary of the invention
The objective of the invention is: overcome deficiency of the prior art, propose a kind of latticed high-performance carbon nanotube field emission array of oriented growth.Especially improve the structural stability of small-size carbon nanotube array, and the edge effect that strengthens carbon nano pipe array, and reduce and open electric field and threshold field with this, emission improved.
Technical scheme of the present invention is: a kind of latticed high-performance carbon nanotube field emission array of oriented growth, comprise, and conductive substrates, be grown in suprabasil latticed directional carbon nanotube array.It is characterized by: carbon nano pipe array becomes distributed in grid, is an overall structure.
Conductive substrates can be heavily doped silicon, the glass substrate that is coated with metal electrode, metal substrate etc.
The chemical vapor deposition that the growing method of directional carbon nanotube array template can strengthen for hot phase chemical deposition, plasma etc.
Its mesh shape is square, circle, hexagon etc.The carbon nano pipe array height is 100nm-2 μ m.
The advantage of this array is that edge effect is stronger, and structure is more stable, definitely vertical orientated.
The invention has the beneficial effects as follows: improve the structural stability of small-size carbon nanotube array, and the edge effect that strengthens carbon nano pipe array, and reduce and open electric field and threshold field with this, improve emission.Be applicable to the feds higher to the current emission performance requirement, for example, the electron source in x-ray source, microwave amplifier, field emission scanning electron microscope etc.
The accompanying drawing explanation
Fig. 1 is the hexagonal mesh shape carbon nano pipe array of preparing.
Fig. 2 is the square net shape carbon nano pipe array of preparing.
Fig. 3 is the circular net trellis carbon nano pipe array of preparing.
Specific embodiments
Describe in conjunction with the drawings embodiment of the present invention in detail, above-mentioned operation principle of the present invention and advantage will become clearer, as shown in the drawings.
As shown in Figure 1, carbon nano pipe array has certain height to the structure of described carbon nanotube cathod of the present invention, and becomes distributed in grid, is an integral body.This structure is compared discrete carbon nano pipe array, has constitutionally stable advantage, and more easily realizes larger edge effect.
Below embodiments of the invention are elaborated, the present embodiment is implemented take technical solution of the present invention under prerequisite, provided detailed execution mode and process, but the scope that the present invention protects is not limited to following embodiment.
Embodiment, the preparation process of High Performance Grid dress carbon nano pipe array is as follows:
(1) at first, select heavily doped silicon chip as substrate, silicon chip is cleaned two minutes respectively in acetone (acetone) and isopropyl alcohol (IPA), remove surface organic matter and other impurity, be baked to 180 ℃ and keep two minutes to remove surperficial moisture.
(2) then at surperficial spin coating (spin-coat) one deck electron beam resist, at 180 ℃ of temperature, post bake is 90 seconds.
(3) photoresist is made by lithography to latticed pattern, through developing, just prepared the figuratum photoresist mask of tool.
(4) then the method by magnetron sputtering is at the surface sputtering catalyst film of sample, and the catalyst here is comprised of double-layer films, below one deck be the Al film, thickness 10nm, the above is the Fe film, thickness 1nm.
(5) peel off, sample is immersed in acetone, the photoresist be not exposed is just by acetone solution, the catalyst layer Automatic-falling on photoresist surface.So, sample surfaces just only has been left the figuratum catalyst film of tool.
(6) then adopt hot gas to resemble the growing oriented carbon nano-tube of chemical deposition, just can prepare the figuratum carbon nano-tube film array of tool.
Claims (1)
1. the preparation method of the latticed high-performance carbon nanotube field emission array of an oriented growth is characterized in that step is as follows:
(1) at first, select heavily doped silicon chip as substrate, silicon chip is cleaned two minutes respectively in acetone and isopropyl alcohol, remove surface organic matter and other impurity, be baked to 180 ℃ and keep removing in two minutes surperficial moisture;
(2) then at surperficial spin coating one deck electron beam resist, at 180 ℃ of temperature, post bake is 90 seconds;
(3) photoresist is made by lithography to latticed pattern, through developing, just prepare the figuratum photoresist mask of tool;
(4) then the method by magnetron sputtering is at the surface sputtering catalyst film of sample, and the catalyst film here is comprised of double-layer films, below one deck be the Al film, thickness 10nm, the above is the Fe film, thickness 1nm;
(5) peel off, sample is immersed in acetone, the photoresist exposed during not by photoetching is just by acetone solution, the catalyst layer Automatic-falling on photoresist surface; So, sample surfaces just only has been left the figuratum catalyst film of tool;
(6) then adopt the growing oriented carbon nano-tube of hot phase chemical deposition, just can prepare the figuratum carbon nano-tube film array of tool.
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| CN2011102242016A CN102324350B (en) | 2011-08-07 | 2011-08-07 | Orientated-growth latticed high-performance carbon nano-tube field emission array and preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2013136299A1 (en) * | 2012-03-16 | 2013-09-19 | Nanox Imaging Limited | Devices having an electron emitting structure |
| CN104584179B (en) | 2012-08-16 | 2017-10-13 | 纳欧克斯影像有限公司 | Image capture device |
| WO2015079393A1 (en) | 2013-11-27 | 2015-06-04 | Nanox Imaging Plc | Electron emitting construct configured with ion bombardment resistant |
| CN103833001B (en) * | 2014-01-03 | 2015-08-12 | 南京康众光电科技有限公司 | A kind of carbon nano tube growth method of headchute formula patterning growth and radiator thereof |
| CN110767515B (en) * | 2019-10-21 | 2020-10-27 | 北京师范大学 | Preparation method of carbon nanotube array beam with adjustable length-diameter ratio applied to field emission cold cathode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1585067A (en) * | 2004-06-11 | 2005-02-23 | 华东师范大学 | Preparing method for lattice nanometer carbon base thin-film cold cathode |
| CN1730382A (en) * | 2005-09-02 | 2006-02-08 | 清华大学 | Carbon tube nanometer tube figuring technique |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1585067A (en) * | 2004-06-11 | 2005-02-23 | 华东师范大学 | Preparing method for lattice nanometer carbon base thin-film cold cathode |
| CN1730382A (en) * | 2005-09-02 | 2006-02-08 | 清华大学 | Carbon tube nanometer tube figuring technique |
Non-Patent Citations (2)
| Title |
|---|
| Chi Li,Yan Zhang等.High emission current density,vertically aligned carbon nanotube mesh,field emitter array.《Applied Physics Letters》.2010,第97卷（2010）113107-1到113107－3. |
| High emission current density,vertically aligned carbon nanotube mesh,field emitter array;Chi Li,Yan Zhang等;《Applied Physics Letters》;20101231;第97卷;（2010）113107-1到113107－3 * |
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