CN102557014B - Method for forming patterns of graphene oxide and patterns of graphene - Google Patents
Method for forming patterns of graphene oxide and patterns of graphene Download PDFInfo
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- CN102557014B CN102557014B CN201010616356.XA CN201010616356A CN102557014B CN 102557014 B CN102557014 B CN 102557014B CN 201010616356 A CN201010616356 A CN 201010616356A CN 102557014 B CN102557014 B CN 102557014B
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Abstract
The invention relates to a method for forming patterns of graphene oxide. The method comprises the following steps of: (1) preparing a substrate; (2) forming a hydrophobic self-assembled monolayer film on at least one surface of the substrate; (3) covering the hydrophobic self-assembled monolayer film by using a mask, then adopting an ultraviolet lamp for exposure, removing the mask after exposure and obtaining a substrate with at least one surface containing a patterned self-assembled monomer film template; and (4) covering the patterned self-assembled monomer film template by using aqueous solution of the graphene oxide, and drying, thus forming the patterns of the graphene oxide on at least one surface of the substrate. The invention also provides a method for forming patterns of graphene. According to the method, a new ideal for preparing the patterns of the graphene oxide is developed.
Description
Technical field
The present invention relates to a kind of method that forms Graphene pattern that forms the method for graphene oxide patterns and adopt the graphene oxide patterns being obtained by the method that forms graphene oxide patterns of the present invention to reduce.
Background technology
From 2004, since the people such as Geim have obtained single-layer graphene by micromechanics stripping method, this thinnest known carbon material just became " star molecule " in its family.Its stable Colloidal particles, superpower mechanical property, excellent electroconductibility and carrying capacity have attracted extensive concern and the research of scientific circles, are considered to have a wide range of applications in fields such as micro-nano electron device, energy storage, high-strength materials; Especially it,, in micro-nano field of electronic devices, is expected to become core material of new generation.
For application prospect being converted into real achievement, people constantly explore preparation and the working method of Graphene.The method having developed mainly can be divided into Physical and the large class of chemical method two, and the physical method taking micromechanics stripping method as representative has advantage preparing aspect the Graphene of perfect lattice, but because inefficiency cannot realize suitability for industrialized production.Chemical process is prepared Graphene especially taking oxidation reduction process as main, can carry out solution processing to it by preparing graphene oxide, is convenient to prepare thin-film material, then obtains grapheme material through reduction.And in the application of device, it is important step that material is carried out to patterning processing, existing laser straight literary style (Microstructuring of Graphene Oxide Nanosheets Using Direct Laser Writing.Yong Zhou, Qiaoliang Bao, Binni Varghese, Lena Ai Ling Tang, Chow Khim Tan, Chorng-Haur Sow, and Kian Ping Loh.Advanced Materials.2010, 22 (1), 67-71), plasma etching method (Patterned Graphene Electrodes fromSolution-Processed Graphite Oxide Films for Organic Field-Effect Transistors.Shuping Pang, Hoi Nok Tsao, Xinliang Feng, and Klaus Mullen.AdvancedMaterials.2009, 21 (34), 3488-3491) etc. the patterning method cost of Graphene is high, condition harshness.
Therefore a kind of, explore new formation graphene oxide patterns method seems particularly urgent.
Summary of the invention
The object of the present invention is to provide a kind of method that forms Graphene pattern that adopts the method for patterning template-mediated formation graphene oxide patterns and adopt this graphene oxide patterns to reduce.
The method of formation graphene oxide patterns of the present invention comprises:
(1) prepare substrate;
(2) at least one surface of substrate, form hydrophobic self-assembled monolayer;
(3) with adopting UV-lamp exposure after the described hydrophobic self-assembled monolayer of mask covering, and after exposure, remove mask, obtain the substrate of the self-assembled monolayer template that contains patterning in this at least one surface;
(4) cover the self-assembled monolayer template of described patterning with the aqueous solution of graphene oxide, dry, thus on this at least one surface of substrate, form graphene oxide patterns.
The method of formation Graphene pattern of the present invention comprises: by graphene oxide patterns in reducing atmosphere, at 800-1000 DEG C, heat 15-60 minute, wherein, described graphene oxide patterns is the graphene oxide patterns preparing according to the preparation method of graphene oxide patterns of the present invention.
Method of the present invention is by under existing at mask, adopt UV-lamp to expose to hydrophobic self-assembled monolayer, obtain the self-assembled monolayer template of patterning, then adopt the self-assembled monolayer template-mediated graphene aqueous solution of this patterning to carry out moulding and can form graphene oxide patterns.Infer that this is is hydrophilic region because the effect of ultraviolet exposure causes the hydrophobic unimolecular film generation Degradation and Transformation in exposure area, thereby make this surface different zones there is different hydrophilic and hydrophobic matter; Then taking the aqueous solution of graphene oxide as water wetted material, solution is dripped in the template of self-assembled monolayer of above-mentioned patterning, make graphene oxide then form pattern in the hydrophilic region orientated deposition of patterned surface by the guiding function of solution.Method of the present invention, simple method by the deep UV exposure to self-assembled monolayer has been constructed the template of preparing graphene oxide patterns, then prepare graphene oxide patterns with this patterning template, with low cost, simultaneously for providing new thinking taking graphene oxide as basic related application.
Brief description of the drawings
Fig. 1 is preparation method's of the present invention schematic diagram.
Fig. 2 is the optical microscope photograph of 1500 order graphene oxide patterns in the embodiment of the present invention 1.
A in Fig. 3 and b are respectively electron scanning micrograph and the frictional force microphotograph of 2000 order graphene oxide patterns in the embodiment of the present invention 2, and wherein frictional force microscope figure is of a size of 50 × 50 μ m
2.
A in Fig. 4 and b are respectively Raman scattering collection of illustrative plates and the Raman image figure of 600 order graphene oxide patterns in the embodiment of the present invention 3.
Fig. 5 is the optical microscope photograph of the graphene oxide patterns in embodiments of the invention 7.
Fig. 6 is the optical microscope photograph of the graphene oxide patterns in embodiments of the invention 8.
Description of reference numerals
1 represents substrate, and 2 represent hydrophobic self-assembled monolayer, and 3 represent the exposure area after self-assembled monolayer exposure, and 4 represent the aqueous solution of graphene oxide, and 5 represent graphene oxide; S1 represents step (1), and S2 represents step (2), and S3 represents step (3), and S4 represents step (4).
Embodiment
The preparation method of graphene oxide patterns of the present invention comprises: (1) prepares substrate; (2) at least one surface of substrate, form hydrophobic self-assembled monolayer; (3) with adopting UV-lamp exposure after the described hydrophobic self-assembled monolayer of mask covering, and after exposure, remove mask, obtain the substrate of the self-assembled monolayer template that contains patterning in this at least one surface; (4) cover the self-assembled monolayer template of described patterning with the aqueous solution of graphene oxide, dry, thus on this at least one surface of substrate, form graphene oxide patterns.
In the present invention, the aqueous solution of described graphene oxide is a kind of title of representative, and because the general diameter of graphene oxide is 100-300nm, all higher than 1nm, therefore press the definition of the aqueous solution, it may not be called the aqueous solution, and should be called the colloid aqueous solution of graphene oxide, but because those skilled in the art custom is called the aqueous solution, therefore the present invention also by it referred to as the aqueous solution.
Fig. 1 is shown in by preparation method's of the present invention schematic diagram, and wherein 1 represents substrate, and 2 represent hydrophobic self-assembled monolayer, and 3 represent the exposure area after self-assembled monolayer exposure, and 4 represent the aqueous solution of graphene oxide, and 5 represent graphene oxide; S1 represents step (1), and S2 represents step (2), and S3 represents step (3), and S4 represents step (4).
According to the present invention, although as long as can realize object of the present invention by the self-assembled monolayer template that the aqueous solution of graphene oxide covers described patterning, the concentration of the aqueous solution to described graphene oxide is without particular requirement, but better for what the aqueous solution of described graphene oxide was disperseed in the self-assembled monolayer template of patterning, thereby make the pattern of formation more even, therefore, under preferable case, the concentration of the aqueous solution of described graphene oxide is 0.5-20 μ g/mL, is preferably 1-10 μ g/mL.
According to the present invention, the present invention covers the cladding thickness of self-assembled monolayer template of described patterning without particular requirement to the described aqueous solution with graphene oxide, but when consumption is too much, although can form pattern, but the pattern forming may uniformity coefficient can decline to some extent, consumption is very few is also like this, therefore, generally, the present inventor selects consumption according to the size of copper mesh, for example, when described copper mesh is the circular copper mesh of diameter 3.05mm, general usage quantity is 0.7-7 μ L, according to above-mentioned using priciple, the present inventor thinks, generally, the consumption of the aqueous solution of graphene oxide can be selected according to the area of copper mesh, be generally 0.1-1 μ L/mm
2, be preferably 0.4-0.7 μ L/mm
2.
According to the present invention, under preferable case, the time of described exposure can be 1-5h, is preferably 1-3h.
The present invention, to described dry method and time, without particular requirement, the baking oven that generally sample can be placed in to 60-70 DEG C heats 0.1-10 hour, is preferably 0.1-5 hour, more preferably 0.1-1 hour.
The present invention covers the method for self-assembled monolayer template of described patterning without particular requirement to the aqueous solution of described graphene oxide, for example the aqueous solution of graphene oxide can be dropped in the self-assembled monolayer template of patterning, make to cover the aqueous solution of one deck graphene oxide in self-assembled monolayer template, the present invention drops in the method for dripping in the self-assembled monolayer template of patterning without particular requirement to the described aqueous solution by graphene oxide, for example can the aqueous solution of graphene oxide be dropped in to patterning template surface with liquid-transfering gun, the speed that the present invention drops in patterning template surface to the described aqueous solution by graphene oxide is also without particular requirement, can carry out with reference to prior art, do not repeat them here.
According to the present invention, the present invention without particular requirement, can realize the substrate of preparing hydrophobic self-assembled monolayer in substrate to described substrate for various, is preferably one or more in titanium-composite titania material, gold, silicon chip and sheet glass.When described substrate is titanium-composite titania material and/or when gold, it generally need be mixed with propping material, uses after being plated on propping material by described substrate again, and described propping material can be silicon chip and/or sheet glass.When described substrate is silicon chip and/or sheet glass, it can use as substrate separately, do not need extra propping material.
The present invention to the described method that forms hydrophobic self-assembled monolayer at least one surface of substrate without particular requirement, for example can be according to according to document (Chem.Rev.2005,105 (4), 11031169) in, disclosed method forms and obtains, the present invention to the film thickness of described self-assembled monolayer without particular requirement, be generally 1-10nm, be preferably 1-5nm, more preferably 1-3nm.
According to the present invention, the present invention to the membrane-forming molecule of described self-assembled monolayer without particular requirement, can be the various hydrophobic unimolecular films of long aliphatic chain that contain covalent attachment group, wherein be preferably one or more in the compound shown in the formula of being selected from (I), formula (II), formula (III);
formula (I)
R-SH formula (II)
formula (III)
Direct-connected or the branched-chain alkyl that in formula (I), formula (II) and formula (III), R is C5-C20.
Concrete can be for example n-hexyl phosphoric acid, n-octyl phosphoric acid, positive decyl phosphoric acid, dodecyl phosphoric acid, n-tetradecane base phosphoric acid, n-hexadecyl phosphoric acid, Octadecane base phosphoric acid, n-hexyl triethoxyl silane, n-octyl triethoxyl silane, positive decyl triethoxyl silane, dodecyl triethoxyl silane, n-hexadecyl triethoxyl silane, Octadecane ethyl triethoxy silicane alkane, positive hexylmercaptan, octyl mercaptan, positive decyl mercaptan, n-dodecyl mercaptan, n-tetradecane base mercaptan, 16 mercaptan, one or more in Octadecane base mercaptan, wherein be preferably Octadecane base phosphoric acid, Octadecane ethyl triethoxy silicane alkane, one or more in Octadecane base mercaptan.
According to the present invention, the present invention without particular requirement, can be various conventional masks to described mask, is preferably transmission electron microscope copper mesh, and further preferably aperture is 400-2000 order, is particularly preferably 600,1000,1500 or 2000 object transmission electron microscope copper mesh.
The present invention to the UV-lamp of described exposure use without particular requirement, can be for example 100-400nm for wavelength, be preferably the deep UV lamp of 100-300nm, under preferable case, the power that control deep UV lamp makes deep UV lamp arrive self-assembled monolayer to the distance on self-assembled monolayer surface is 0.5-3mW/cm
2, be preferably 0.8-2.5mW/cm
2for example adopt the deep UV lamp of aforementioned wavelength, as long as time the distance between deep UV lamp and self-assembled monolayer is adjusted into 5-20cm in exposure, being preferably 8-12cm, can to realize the power that deep UV lamp arrives self-assembled monolayer surface be 0.5-3mW/cm
2, be preferably 0.8-2.5mW/cm
2.
According to the present invention, the present invention to the method for described preparation substrate without particular requirement, all can carry out with reference to prior art, for example, (can be according to Langmuir in the time that described substrate is titanium-composite titania material, 2009, 25 (18), the disclosed method of 10746-10753 document is prepared), can prepare as follows substrate: on clean glass cover slide, use electron beam vapour deposition method or hot vapour deposition method evaporation metal titanium, then in air, placing for some time makes its surperficial natural oxidation, obtain layer of titanium dioxide, so, can obtain the matrix material of titanium-titanium dioxide,
In the time that described substrate is gold, can prepare as follows substrate: on clean sheet glass, use electron beam vapour deposition method or hot vapour deposition method evaporation metal gold;
In the time that described substrate is silicon chip or sheet glass, can prepare as follows substrate: use H
2sO
4(98%): H
2o
2(30%) mixing solutions of=7: 3 (volume ratios) is at 100-200 DEG C, be preferably cleaning silicon chip or sheet glass 1-10 hour under 100-150 DEG C of condition, then rinse well with deionized water, and in water, be saved to before self-assembly film forming and dry up with nitrogen.
The present invention to the described method of preparing hydrophobic self-assembled monolayer in substrate without particular requirement, can carry out with reference to prior art, for example can carry out as follows, ready substrate is immersed in the organic solvent that contains membrane-forming molecule, under room temperature, (be generally 10-40 DEG C) and leave standstill 48-100 hour, obtain hydrophobic self-assembled monolayer.The present invention without particular requirement, can be 1-10nm to the thickness of the described hydrophobic self-assembled monolayer obtaining, and is preferably 1-3nm.To described membrane-forming molecule, the concentration in organic solvent, without particular requirement, is preferably 0.5-5mmol/L in the present invention.
The kind of described membrane-forming molecule describes in detail in the preceding article, does not repeat them here.
Membrane-forming molecule described in the present invention and organic solvent can be selected according to different substrates, for example, when taking titanium-composite titania material as substrate, described membrane-forming molecule can be the compound shown in aforesaid formula (II), be preferably Octadecane base phosphoric acid, organic solvent can be Virahol and/or ethanol; When taking gold as substrate, described membrane-forming molecule can be the compound shown in aforesaid formula (III), is preferably Stearyl mercaptan, and organic solvent can be ethanol and/or Virahol; Taking silicon chip or sheet glass, during as substrate, described membrane-forming molecule can be one or more in the compound shown in aforementioned formula (I), is preferably octadecyltriethoxy silane, and described organic solvent can be toluene and/or chloroform.
The present invention to the method for described exposure without particular requirement, can carry out with reference to prior art, for example can carry out as follows: by copper mesh contact cover on self-assembled monolayer and with 0.1-10 millimeter, the quartz plate that is preferably 0.5-2 mm thick covers on copper mesh to fix; Exposure time spacing self-assembled monolayer 1-20 centimetre, is preferably 5-15 centimetre, exposure 1-5 hour, and preferably 1-3 hour, can obtain the self-assembled monolayer template of patterning.
According to the present invention, the present invention without particular requirement, can be the graphene oxide aqueous solution (JACS, 1958,80 (6), 1339-1339) of being prepared by Hummers method to the kind of the described graphene oxide aqueous solution.
The method of formation Graphene pattern of the present invention comprises: by graphene oxide patterns in reducing atmosphere, at 800-1000 DEG C, heat 15-60 minute, wherein, described graphene oxide patterns is the graphene oxide patterns that preparation method of the present invention prepares.
The present invention without particular requirement, for example, by cumulative volume, can be the H of 3-10% to described reducing atmosphere
2mixed gas with the rare gas element of 90-97%.Described rare gas element can be various rare gas elementes, and the present invention, without particular requirement, does not repeat them here.
The method of formation graphene oxide patterns provided by the present invention, according to different substrates and self-assembled monolayer system, have different embodiments, below in conjunction with the drawings and specific embodiments, the present invention is further described, but method of the present invention is not limited to this.
Embodiment 1
In the substrate of titanium/titanium dioxide, form 1500 object graphene oxide patterns, concrete steps are as follows:
(1) preparation of substrate: use the thick metal titanium of electron beam vapour deposition method evaporation one deck 50nm on clean sheet glass, and this substrate is placed to 0.5h in air, make its surperficial natural oxidation obtain layer of titanium dioxide.
(2) form self-assembled monolayer (referring to Chem.Rev.2005,105 (4), 11031169): ready substrate in step (1) is immersed in the aqueous isopropanol of Octadecane base phosphoric acid (Alfa Aesar) of 1mmol/L, place 50 hours, take out, obtain hydrophobic self-assembled monolayer.Record by atomic force microscope, the thickness of unimolecular film is 2nm.
(3) the self-assembled monolayer template of formation patterning: taking 1500 object transmission electron microscope copper mesh as mask, use the deep UV lamp that wavelength is 254nm to expose to the ready self-assembled monolayer of step (2); When exposure by copper mesh contact cover on self-assembled monolayer and with the quartz plate of a slice 1 mm thick and cover on copper mesh to fix; 10 centimetres of exposure time spacing self-assembled monolayers, exposed after 2 hours, removed mask, obtained the self-assembled monolayer template of patterning.
(4) form graphene oxide patterns: be 1 μ g/mL by concentration, consumption is 0.54 μ L/mm
2the aqueous solution of graphene oxide (preparation method is referring to JACS, 1958,80 (6), 1339-1339) drop in the self-assembled monolayer template surface of patterning, the baking oven that sample is placed in to 70 DEG C heats 10min, obtain the pattern of 1500 object graphene oxides, this pattern is consistent with the pattern of mask, and the good evenness of pattern.The optical microscope photograph (SEM figure) of the present embodiment as shown in Figure 2.
Embodiment 2
In the substrate of titanium/titanium dioxide, form 2000 object graphene oxide patterns:
Identical with the method for embodiment 1, the copper mesh that different is in step (3) is 2000 orders, and the concentration of the aqueous solution of the graphene oxide using in step (4) is adjusted into 6 μ g/mL, and consumption is adjusted into 0.4 μ L/mm
2, obtain 2000 object graphene oxide patterns, this pattern is consistent with the pattern of mask, and the good evenness of pattern.
The electron scanning micrograph of the present embodiment and frictional force microphotograph are respectively as shown in a and b in Fig. 3.
Embodiment 3
In the substrate of titanium/titanium dioxide, form 600 object graphene oxide patterns:
Identical with the method for embodiment 1, the copper mesh that different is in step (3) is 600 orders, and the concentration of the aqueous solution of the graphene oxide using in step (4) is adjusted into 10 μ g/mL, and consumption is adjusted into 0.7 μ L/mm
2, obtain 600 object graphene oxide patterns, this pattern is consistent with the pattern of mask, and the good evenness of pattern.
The Raman scattering collection of illustrative plates of the present embodiment and Raman image figure are respectively as shown in a and b in Fig. 4.
Embodiment 4
In gold substrate, form 1500 object graphene oxide patterns, concrete steps are as follows:
(1) preparation of substrate: use the electron beam vapour deposition method chromium metal that evaporation 5nm is thick successively and the thick metallic gold of 50nm on clean sheet glass.
(2) form self-assembled monolayer: ready substrate in step (1) is immersed in the ethanolic soln of Stearyl mercaptan (Alfa Aesar) of 1mmol/L, place 60 hours, obtain hydrophobic self-assembled monolayer.
Step (3) is identical with embodiment 1 with step (4), obtains 1500 object graphene oxide patterns, and the good evenness of pattern.
Embodiment 5
On at the bottom of silicon wafer-based, prepare 1500 object graphene oxide patterns, concrete steps are as follows:
(1) preparation of substrate: silicon chip is placed in to H
2sO
4(98 % by weight): H
2o
2in the mixing solutions of (30 % by weight)=7: 3 (volume ratio), under 120 DEG C of conditions, clean substrate 1 hour, then rinse well with deionized water.
(2) form self-assembled monolayer: ready substrate in step (1) is immersed in the toluene solution of octadecyltriethoxy silane (Alfa Aesar) of 1mmol/L, place 80 hours, obtain hydrophobic self-assembled monolayer.
Step (3) is identical with embodiment 1 with step (4), obtains the graphene oxide patterns identical with embodiment 1 pattern form, and the good evenness of pattern.
Embodiment 6
Identical with the method for embodiment 5, different is to replace silicon chip as substrate using sheet glass, obtains the graphene oxide patterns identical with embodiment 1 pattern form, and the good evenness of pattern.
Embodiment 7
Identical with the method for embodiment 6, the concentration of the aqueous solution of graphene oxide that different is is 20 μ g/mL, and consumption is 0.1 μ L/mm
2, obtain graphene oxide patterns, see Fig. 5, as shown in Figure 5, the uniformity coefficient of the graphene oxide patterns of formation is slightly poor compared with embodiment 1-6.
Embodiment 8
Identical with the preparation method of embodiment 6, the concentration of the aqueous solution of graphene oxide that different is is 0.5 μ g/mL, and consumption is 1 μ L/mm
2, obtain graphene oxide patterns, see Fig. 6, as shown in Figure 6, the uniformity coefficient of the graphene oxide patterns of formation is slightly poor compared with embodiment 1-6.
Embodiment 9-16
The graphene oxide patterns respectively embodiment 1-8 being formed reduces as follows, obtains Graphene pattern.
The graphene oxide patterns that embodiment 1-8 is formed is at reducing atmosphere (H
2with N
2volume ratio be 1: 9) in, heat 30 minutes at 900 DEG C, all obtain Graphene pattern, the pattern obtaining is consistent with graphene oxide patterns.
Claims (7)
1. a method that forms graphene oxide patterns, the method comprises:
(1) prepare substrate, described substrate is titanium-composite titania material and/or gold;
(2) at least one surface of substrate, form hydrophobic self-assembled monolayer, wherein, in the time that described substrate is titanium-composite titania material, the membrane-forming molecule of described self-assembled monolayer is to be selected from the compound shown in formula III, in the time that described substrate is gold, the membrane-forming molecule of described self-assembled monolayer is to be selected from the compound shown in formula II;
Direct-connected or the branched-chain alkyl that in formula II and formula III, R is C5-C20;
(3) with adopting UV-lamp exposure after the described hydrophobic self-assembled monolayer of mask covering, the power of described exposure is 0.5-3mW/cm
2, and after exposure, remove mask, obtain the substrate of the self-assembled monolayer template that contains patterning in this at least one surface;
(4) cover the self-assembled monolayer template of described patterning with the aqueous solution of graphene oxide, dry, thereby on this at least one surface of substrate, form graphene oxide patterns, wherein, the concentration of the aqueous solution of described graphene oxide is 1-10 μ g/mL.
2. method according to claim 1, wherein, the consumption of the aqueous solution of described graphene oxide is 0.1-1 μ L/mm
2.
3. method according to claim 1, wherein, the time of exposure is 1-10h.
4. method according to claim 1, wherein, described mask is transmission electron microscope copper mesh.
5. method according to claim 1, wherein, the thickness of described self-assembled monolayer is 1-5nm.
6. method according to claim 1, wherein, the described graphene oxide aqueous solution is the graphene oxide aqueous solution of being prepared by Hummers method.
7. one kind forms the method for Graphene pattern, the method comprises: by graphene oxide patterns in reducing atmosphere, at 800-1000 DEG C, heat 15-60 minute, it is characterized in that, the formation method of described graphene oxide patterns is the method described in any one in claim 1-6.
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| CN115724421B (en) * | 2021-08-23 | 2024-07-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | Directional carbon nanotube array structure and preparation method and application thereof |
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| CN1730382A (en) * | 2005-09-02 | 2006-02-08 | 清华大学 | Carbon tube nanometer tube figuring technique |
| CN101734944A (en) * | 2008-11-07 | 2010-06-16 | 中国科学院兰州化学物理研究所 | Method for preparing two-dimensional patterned nano-cuprous sulfide thin film |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1730382A (en) * | 2005-09-02 | 2006-02-08 | 清华大学 | Carbon tube nanometer tube figuring technique |
| CN101734944A (en) * | 2008-11-07 | 2010-06-16 | 中国科学院兰州化学物理研究所 | Method for preparing two-dimensional patterned nano-cuprous sulfide thin film |
Non-Patent Citations (4)
| Title |
|---|
| Fabrication of patterned silane based self-assembled monolayers by photolithography and surface reactions on silicon-oxide substrates;Nocole Herzer et al.;《Chemical Communications》;20100701;第46卷;第5634-5652页 * |
| General Route toward Patterning of Graphene Oxide by a Combination of Wettability Modulation and Spin-Coating;Yunlong Guo et al.;《ACS Nano》;20100921;第4卷(第10期);第5749-5754页 * |
| Nocole Herzer et al..Fabrication of patterned silane based self-assembled monolayers by photolithography and surface reactions on silicon-oxide substrates.《Chemical Communications》.2010,第46卷第5634-5652页. |
| Yunlong Guo et al..General Route toward Patterning of Graphene Oxide by a Combination of Wettability Modulation and Spin-Coating.《ACS Nano》.2010,第4卷(第10期),第5749-5754页. |
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