CN102502485A - Technical process for imaging nano materials - Google Patents
Technical process for imaging nano materials Download PDFInfo
- Publication number
- CN102502485A CN102502485A CN2011103548669A CN201110354866A CN102502485A CN 102502485 A CN102502485 A CN 102502485A CN 2011103548669 A CN2011103548669 A CN 2011103548669A CN 201110354866 A CN201110354866 A CN 201110354866A CN 102502485 A CN102502485 A CN 102502485A
- Authority
- CN
- China
- Prior art keywords
- nano material
- substrate
- mentioned steps
- material according
- figuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000003384 imaging method Methods 0.000 title abstract 2
- 239000007791 liquid phase Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 238000007519 figuring Methods 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 18
- 239000008367 deionised water Substances 0.000 claims description 14
- 229910021641 deionized water Inorganic materials 0.000 claims description 14
- 239000000243 solution Substances 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 238000001338 self-assembly Methods 0.000 claims description 6
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 230000002940 repellent Effects 0.000 claims description 5
- 239000005871 repellent Substances 0.000 claims description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 230000010148 water-pollination Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 230000002209 hydrophobic effect Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000003153 chemical reaction reagent Substances 0.000 claims description 2
- 239000000084 colloidal system Substances 0.000 claims description 2
- 238000001125 extrusion Methods 0.000 claims description 2
- 238000005286 illumination Methods 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims description 2
- 239000010703 silicon Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000002096 quantum dot Substances 0.000 description 7
- 238000001000 micrograph Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 4
- 238000006424 Flood reaction Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- RYPYGDUZKOPBEL-UHFFFAOYSA-N trichloro(hexadecyl)silane Chemical compound CCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl RYPYGDUZKOPBEL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Images
Landscapes
- Silicon Compounds (AREA)
Abstract
The invention discloses a technical process for imaging nano materials, which includes few procedures and is low in cost based on a liquid phase method. Further, the technical process is universal and applicable to assembly of various materials and structural nano materials. In addition, the technical process is high in precision, and can be used to easily obtain fine nano material structures less than 100nm in line width.
Description
Technical field
The present invention relates to the nano material assembling technology field, particularly a kind of figuring technique of nano material.
Background technology
Relative traditional macro material, nano material possesses the character of many uniquenesses.Nano material has broad application prospects in fields such as composite, function element, photoelectrocatalysis and medicine conveyings.Especially low-dimensional nano structure is like materials such as quantum dot, nanotube, nano wire, nano belt.Low-dimensional nano structure has more demonstrated fully dimensional effect and the light of nano material, the unusual characteristic of electric transmission.It is to realize research material characteristic and one of important step for preparing macroscopical function available device that nano material is assembled to the graphical size (like millimeter, micron dimension) of macroscopic view from nanoscale.
The conventional method of assemble nanometer material is by post-processing technologies such as specific in-situ growth technology or micro-nano processing.These two kinds of technology are complex procedures, cost height not only, and does not have universality.For example: a plurality of steps such as on the one hand, in the patterned nano particle of preparation, above-mentioned two kinds of technology often need be through whirl coating, exposure, development, vapor deposition, peel off, annealing, and these processing steps may not be applicable to other nano materials; On the other hand, be limited to the accuracy limitations of processing technology, conventional method also is difficult to obtain the fine structure below live width 100 nm.
In sum, the weak point of the figuring technique of nano material existence at present is complex process cost height, is not suitable for the processing of most nano materials and is difficult to obtain the meticulous nanometer material structure below live width 100 nm.
Summary of the invention
Patent of the present invention technical problem to be solved provide the few cost of a kind of operation low, be applicable to that the most of nano materials and the live width that is easy to get are the figuring technique of the nano material of the fine structure below 100 nm.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of figuring technique of nano material may further comprise the steps:
1) hydrophily is handled: with substrate with UV, chemical solution or O
2Plasma treatment again with this substrate of deionized water rinsing, forms hydrophilic region until said substrate surface;
2) hydrophobicity is handled: the substrate that step 1) obtains is used toluene and deionized water rinsing successively, form water repellent region until said substrate surface;
The water repellent region of the substrate that obtains 3) hydrophilic-hydrophobic region processing: with step 2) is described through ultraviolet light illumination or with electron beam direct and is preset describing of figure; Water repellent region until said substrate forms hydrophilic region, promptly forms hydrophilic-hydrophobic region;
4) ultrasonic dispersion: nano material is dissolved in ethanol or nano material is dissolved in surfactant forms liquid phase mixture in the deionized water, and place ultrasonic separating apparatus to carry out ultrasonic dispersion this liquid phase mixture;
5) apply: resulting liquid phase mixture selectivity in the step 4) is coated on the hydrophilic region of resultant substrate surface in the step 3), promptly obtains patterned nano material array.
Preferably, above-mentioned steps 1) described in the material of substrate be Au, Si, SiO
2Or Au, Si, SiO are contained in the surface
2Material.
Preferably, above-mentioned steps 1) described in chemical reagent be ammoniacal liquor, hydrogen peroxide, the deionized water standard cleaning solution that forms of 1:1:5 by volume.
Preferably, above-mentioned steps 2) substrate surface all forms the self assembly molecule layer described in, and said self assembly molecule layer has hydrophobic grouping;
Preferably, the thickness of said self assembly molecule layer is 1-10nm.
Preferably, above-mentioned steps 3) described in the ripple of ultraviolet light no longer than 350nm.
Preferably, above-mentioned steps 3) described in substrate place under the ultraviolet light through glass or metal mask plate.
Preferably, above-mentioned steps 3) described in electron beam provide by SEM or electron beam direct device.
Preferably, above-mentioned steps 4) described in liquid phase mixture be true solution, suspension or colloid.
Preferably, above-mentioned steps 4) described in apply and to comprise that rotation applies, lifts coatings, drippage coating or extrusion type coating head and is coated with.
The present invention has following beneficial effect with respect to prior art: the figuring technique of nano material of the present invention realizes that based on liquid phase method the few cost of operation is low; Further, the figuring technique of this nano material has universality, can be used for assembling the nano material of various materials and structure; In addition, the figuring technique precision of this nano material is high, the meticulous nanometer material structure below the live width that is easy to get 100 nm.
Description of drawings
Fig. 1 is the process chart of the figuring technique of nano material of the present invention;
Fig. 2 is a low power electron scanning micrograph of assembling the quantum dot array that obtains through this process, and scale is 20 microns among the figure;
Fig. 3 is a high power electron scanning micrograph of assembling the quantum dot array that obtains through this process, and scale is 2 microns among the figure.
The specific embodiment
Below in conjunction with embodiment and accompanying drawing the present invention is described in further detail, but the working of an invention mode is not limited thereto.
Embodiment 1
As shown in Figure 1, the flow chart of the figuring technique of nano material of the present invention.
1) hydrophily is handled: the silicon substrate that will contain 5 nm silicon oxide layers is soaked in ammoniacal liquor, hydrogen peroxide, deionized water volume ratio under 70 ° of C be in the standard cleaning solution of 1:1:5; Soak after 10 minutes, take out this silicon substrate; Then with this silicon substrate of deionized water rinsing;
2) hydrophobicity is handled: be soaked in concentration under the silicon substrate room temperature that step 1) is obtained and be in the toluene solution of hexadecyl trichlorosilane of 0.001mg/ml; Soak after 20 minutes, take out silicon substrate; Earlier wash silicon substrate then, use the deionized water rinsing silicon substrate again with toluene;
3) silicon substrate that hydrophilic-hydrophobic treatments: with step 2) obtains places 5mm place exposure under the low pressure mercury lamp of 150W through glass or metal mask plate, the time for exposure is 30 seconds;
4) ultrasonic dispersion: with 0.1 mg average diameter is that the silicon quantum dot of 5 nm is dissolved in and forms liquid-phase mixing liquid in the 50 ml ethanol, places the ultrasonic separating apparatus of 300W ultrasonic this liquid-phase mixing liquid then, and ultrasonic time is 30 minutes;
5) apply: the substrate that step 3) is obtained is immersed in downwards in the solution that step 4) obtains with the speed of 10 cm/min perpendicular to liquid surface and floods, and dip time is 1 minute; Then this substrate is lifted out liquid surface with the speed of 2 cm/min; The sample that obtains is the silicon quantum dot array of graphical distribution.Shown in Figure 2, the low power electron scanning micrograph of the quantum dot array that obtains through this process assembling; As shown in Figure 3, the high power electron scanning micrograph of the quantum dot array that obtains through this process assembling.
Embodiment 2
1) hydrophily is handled: the silicon substrate that will contain 5 nm silicon oxide layers is soaked in ammoniacal liquor, hydrogen peroxide, deionized water volume ratio under 70 ° of C be in the standard cleaning solution of 1:1:5; Soak after 10 minutes, take out this silicon substrate; Then with this silicon substrate of deionized water rinsing;
2) hydrophobicity is handled: be soaked in concentration under the silicon substrate room temperature that step 1) is obtained and be in the toluene solution of hexadecyl trichlorosilane of 0.001mg/ml; Soak after 20 minutes, take out silicon substrate; Earlier wash silicon substrate then, use the deionized water rinsing silicon substrate again with toluene;
3) hydrophilic-hydrophobic treatments: the substrate that step 3) is obtained places the direct electronic beam write device, uses accelerating potential to be the preset figure of the electron beam drawing of 30kV, and the light exposure of this electron beam is 1pC;
4) ultrasonic dispersion: 0.1 mg SWCN and 1g sodium lauryl sulfate are dissolved in formation liquid-phase mixing liquid in the 50 ml deionized waters, place the ultrasonic separating apparatus of 500W ultrasonic liquid-phase mixing liquid, ultrasonic time is 60 minutes;
5) apply: the substrate that step 3) is obtained immerses downwards in the solution that step 4) obtains with the speed of 10 cm/min perpendicular to liquid surface and floods, and dip time is 1 minute; Then this substrate is lifted out liquid surface with the speed of 2 cm/min; The sample that obtains is the single wall carbon nanomaterial array of graphical distribution.
The foregoing description is merely preferred embodiment of the present invention, is not to be used for limiting practical range of the present invention.Be that all equalizations of doing according to content of the present invention change and modification, all contained by claim of the present invention scope required for protection.
Claims (10)
1. the figuring technique of a nano material is characterized in that may further comprise the steps:
1) hydrophily is handled: with substrate with UV, chemical solution or O
2Plasma treatment again with this substrate of deionized water rinsing, forms hydrophilic region until said substrate surface;
2) hydrophobicity is handled: the substrate that step 1) obtains is used toluene and deionized water rinsing successively, form water repellent region until said substrate surface;
The water repellent region of the substrate that obtains 3) hydrophilic-hydrophobic region processing: with step 2) is described through ultraviolet light illumination or with electron beam direct and is preset describing of figure; Partially hydrophobic zone until said substrate forms hydrophilic region, promptly forms hydrophilic-hydrophobic region;
4) ultrasonic dispersion: nano material is dissolved in ethanol or nano material is dissolved in surfactant forms liquid phase mixture in the deionized water, and place ultrasonic separating apparatus to carry out ultrasonic dispersion this liquid phase mixture;
5) apply: resulting liquid phase mixture selectivity in the step 4) is coated on the hydrophilic region of resultant substrate surface in the step 3), promptly obtains patterned nano material array.
2. the figuring technique of nano material according to claim 1, it is characterized in that: the material of substrate above-mentioned steps 1) is Au, Si, SiO
2Or Au, Si, SiO are contained in the surface
2Material.
3. the figuring technique of nano material according to claim 1 is characterized in that: chemical reagent above-mentioned steps 1) is ammoniacal liquor, hydrogen peroxide, the deionized water standard cleaning solution that forms of 1:1:5 by volume.
4. the figuring technique of nano material according to claim 1 is characterized in that: substrate surface above-mentioned steps 2) forms the self assembly molecule layer, and said self assembly molecule layer has hydrophobic grouping.
5. the figuring technique of nano material according to claim 4, it is characterized in that: the thickness of said self assembly molecule layer is 1-10nm.
6. the figuring technique of nano material according to claim 1, it is characterized in that: the ultraviolet light wavelength is not more than 350nm above-mentioned steps 3).
7. the figuring technique of nano material according to claim 1, it is characterized in that: substrate places under the ultraviolet light through glass or metal mask plate above-mentioned steps 3).
8. the figuring technique of nano material according to claim 1, it is characterized in that: electron beam above-mentioned steps 3) is provided by SEM or electron beam direct device.
9. the figuring technique of nano material according to claim 1, it is characterized in that: liquid phase mixture above-mentioned steps 4) is true solution, suspension or colloid.
10. the figuring technique of nano material according to claim 1 is characterized in that: apply above-mentioned steps 4) and comprise that rotation applies, lifts coatings, drippage applies or the extrusion type coating head coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103548669A CN102502485A (en) | 2011-11-10 | 2011-11-10 | Technical process for imaging nano materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103548669A CN102502485A (en) | 2011-11-10 | 2011-11-10 | Technical process for imaging nano materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102502485A true CN102502485A (en) | 2012-06-20 |
Family
ID=46214636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103548669A Pending CN102502485A (en) | 2011-11-10 | 2011-11-10 | Technical process for imaging nano materials |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102502485A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107065308A (en) * | 2017-06-07 | 2017-08-18 | 深圳市华星光电技术有限公司 | Substrate comprising quantum rod film and preparation method thereof, display panel |
| CN107644806A (en) * | 2017-08-30 | 2018-01-30 | 中山大学 | The graphical preparation method of the orderly self assembly of metal oxide and metal-oxide film |
| CN109400105A (en) * | 2018-09-26 | 2019-03-01 | 巩义市泛锐熠辉复合材料有限公司 | A kind of preparation method of anti-picking aerogel blanket |
| CN110255492A (en) * | 2019-05-31 | 2019-09-20 | 北京工商大学 | A kind of super-hydrophobic super hydrophilic area distribution surface of silicon base and its preparation method and application |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040136893A1 (en) * | 2001-03-02 | 2004-07-15 | Fuji Xerox Co., Ltd. | Carbon nanotube structures and method for manufacturing the same |
| CN1656264A (en) * | 2002-03-25 | 2005-08-17 | 北卡罗来纳-查佩尔山大学 | Method for assembling nano objects |
| CN1802727A (en) * | 2003-03-21 | 2006-07-12 | 北卡罗来纳-查佩尔山大学 | Methods and apparatus for patterned deposition of nanostructure-containing materials by self-assembly and related articles |
| CN101863451A (en) * | 2010-04-20 | 2010-10-20 | 上海大学 | Method for preparing zinc oxide in three-dimensional nanostructure with cryogenic fluid method |
| CN102086375A (en) * | 2009-12-02 | 2011-06-08 | 中国科学院研究生院 | Method for realizing self-cleaning by performing superhydrophobic modification treatment on surface of substrate |
-
2011
- 2011-11-10 CN CN2011103548669A patent/CN102502485A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040136893A1 (en) * | 2001-03-02 | 2004-07-15 | Fuji Xerox Co., Ltd. | Carbon nanotube structures and method for manufacturing the same |
| CN1656264A (en) * | 2002-03-25 | 2005-08-17 | 北卡罗来纳-查佩尔山大学 | Method for assembling nano objects |
| CN1802727A (en) * | 2003-03-21 | 2006-07-12 | 北卡罗来纳-查佩尔山大学 | Methods and apparatus for patterned deposition of nanostructure-containing materials by self-assembly and related articles |
| CN102086375A (en) * | 2009-12-02 | 2011-06-08 | 中国科学院研究生院 | Method for realizing self-cleaning by performing superhydrophobic modification treatment on surface of substrate |
| CN101863451A (en) * | 2010-04-20 | 2010-10-20 | 上海大学 | Method for preparing zinc oxide in three-dimensional nanostructure with cryogenic fluid method |
Non-Patent Citations (2)
| Title |
|---|
| 冯文辉等: "超亲水TiO2和TiO2-SiO2表面的动态润湿性", 《高等学校化学学报》, 30 April 2003 (2003-04-30) * |
| 黄健等: "低温等离子体对聚合物多孔膜的亲水化改性", 《高分子通报》, 30 June 2005 (2005-06-30) * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107065308A (en) * | 2017-06-07 | 2017-08-18 | 深圳市华星光电技术有限公司 | Substrate comprising quantum rod film and preparation method thereof, display panel |
| US10649278B2 (en) | 2017-06-07 | 2020-05-12 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Sustrate comprising quantum rod film and method for manufacturing the same, display panel |
| CN107065308B (en) * | 2017-06-07 | 2020-07-03 | 深圳市华星光电技术有限公司 | Substrate comprising quantum rod film, manufacturing method of substrate and display panel |
| CN107644806A (en) * | 2017-08-30 | 2018-01-30 | 中山大学 | The graphical preparation method of the orderly self assembly of metal oxide and metal-oxide film |
| CN109400105A (en) * | 2018-09-26 | 2019-03-01 | 巩义市泛锐熠辉复合材料有限公司 | A kind of preparation method of anti-picking aerogel blanket |
| CN109400105B (en) * | 2018-09-26 | 2022-04-08 | 巩义市泛锐熠辉复合材料有限公司 | Preparation method of powder falling prevention aerogel felt |
| CN110255492A (en) * | 2019-05-31 | 2019-09-20 | 北京工商大学 | A kind of super-hydrophobic super hydrophilic area distribution surface of silicon base and its preparation method and application |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yang et al. | Electrophoresis coating of titanium dioxide on aligned carbon nanotubes for controlled syntheses of photoelectronic nanomaterials | |
| Subramanian et al. | Review of recent advances in applications of vapor-phase material infiltration based on atomic layer deposition | |
| JP4923904B2 (en) | Method for producing a substrate with different hydrophilic and / or lipophilic regions on the same surface | |
| Dudem et al. | Hierarchical Ag/TiO2/Si forest-like nano/micro-architectures as antireflective, plasmonic photocatalytic, and self-cleaning coatings | |
| US8784673B2 (en) | Highly organized single-walled carbon nanotube networks and method of making using template guided fluidic assembly | |
| KR101274522B1 (en) | Microfluidic filter using three dimensional carbon nanotube network and the fabrication method thereof | |
| CN104835719B (en) | A kind of porous SiO2The preparation method of nano-wire array | |
| CN107059160B (en) | The graphene fiber and preparation method thereof of nanometer modified by silver | |
| CN101961639A (en) | Preparation method of silica core-shell type liquid chromatographic packings | |
| CN102502485A (en) | Technical process for imaging nano materials | |
| Fang et al. | Solution–liquid–solid growth and catalytic applications of silica nanorod arrays | |
| CN105954251A (en) | Surface enhanced Raman scattering substrate and manufacturing method thereof | |
| CN105555705B (en) | Preparation method of silicon nanowire array | |
| CN102530929A (en) | Methods for forming graphene oxide patterns and graphene patterns | |
| CN104726927A (en) | Bionic micro-nano structure super hydrophobic porous silicon surface preparation method | |
| CN102617874A (en) | Two-dimensional colloid crystal thin film and preparation method thereof | |
| CN107138737A (en) | The preparation method of electrum rice structure with regulatable plasma resonance absorption characteristic | |
| CN108179404B (en) | Method for constructing ordered metal nanopore array based on growth method | |
| CN106556677A (en) | A kind of three-dimensional porous graphene extra-thin film gas sensor and preparation method thereof | |
| Chen et al. | Silicon carbide nano-via arrays fabricated by double-sided metal-assisted photochemical etching | |
| CN102815701A (en) | Preparation method of one-dimensional silicon nanowires with different linear densities | |
| CN101759143A (en) | Method for controlling growth of micro-nano pore structure on silicon surface | |
| CN111362225B (en) | Nano needle point structure, composite structure and preparation method thereof | |
| CN103204463B (en) | Method for assembling ordered quantum dot matrix based on electrostatic potential well | |
| CN108456895B (en) | α -Fe2O3Au nano circular truncated array photoelectrode and preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120620 |