CN1723171B

CN1723171B - Production method for tubular carbon molecule

Info

Publication number: CN1723171B
Application number: CN200480001829.8A
Authority: CN
Inventors: D·P·戈塞恩; 梶浦尚志; 丸山竜一郎; 白石誠司; 黄厚金; *野宏治; 和智滋明; 阿多誠文
Original assignee: Sony Corp
Current assignee: Sony Corp
Priority date: 2003-01-09
Filing date: 2004-01-08
Publication date: 2010-10-06
Anticipated expiration: 2024-01-08
Also published as: CN1723171A; CN101618855A; JP4161191B2; JP2004265600A

Abstract

A production method for a tubular carbon molecule capable of arraying carbon nanotubes at finer intervals and regularly. A catalyst is disposed on a material substrate (10) consisting of a semiconductor such as silicon (Si) and containing iron (Fe) as a catalyst by utilizing melting according to modulated heat distribution (11). The heat distribution (11) is formed by diffracting energy beams (12), for example, by a diffraction lattice (13). A method of disposing a catalyst may include, for example, depositing iron in a planar or protruding form in a position matching the heat distribution (11), or further transferring it, by using it as an original, onto another substrate. Carbon nanotubes are grown using the disposed catalyst. The grown nanotubes can be used for a recording device, a field electron emission element or an FED.

Description

Make the method for tubular carbon molecule

Technical field

The present invention relates to make the method for tubular carbon molecule, it can be arranged in fine pattern with tubular carbon molecule (for example CNT), the invention still further relates to by said method and obtains tubular carbon molecule.And, the recording equipment that the present invention relates to make the method for the recording equipment that uses described tubular carbon molecule and use described tubular carbon molecule, also relate to the method for making the field-causing electron ballistic device comprise the negative electrode that uses described tubular carbon molecule and by the field-causing electron ballistic device that said method obtains, also relate to the method for making the display unit that uses described field-causing electron ballistic device and the display unit of the described field-causing electron ballistic device of use.

Background technology

In recent years, nanometer technology has obtained significant development, particularly molecular structure (for example CNT) is the stabilizing material with better character (for example high thermal conductivity, high conductivity and high mechanical properties), so expect that described molecular structure can be used for purposes widely, for example transistor, memory and field-causing electron ballistic device.

For example, an application as CNT, known described CNT can be fit to (for example be used for obtaining cold cathode field-causing electron emission (hereinafter referred to as " field-causing electron emission "), referring to Yahachi Saito, Journalof The Surface Science Society of Japan, 1998, the 19th volume, the 10th phase, the 680-686 page or leaf).Described field-causing electron emission is a kind of like this phenomenon, when the electric field that applies to the metal that places vacuum or semiconductor greater than reservation threshold, electronics is crossed near metal or the semiconductor surface energy barrier by quantum tunneling effect, thereby even electronics also can be injected vacuum when room temperature.

Utilize field-causing electron emission principle to come the FED (field-emitter display) of display image to have some features, for example high strength, low energy consumption and low profile (profile), and described FED has developed into the alternative display unit (for example referring to Japanese laid-open patent application publication 2002-203473 and 2000-67736) of conventional cathode ray tube (CRT).Typical structure as FED, (wherein anode scribbles fluorescence coating for minus plate (wherein having formed the negative electrode of emission electronics) and positive plate, collision excitation by the emission electronics is come luminous) be combined into a mutual opposed unit, the inside of described FED is in high vacuum state.But in this structure, minus plate and positive plate are difficult to distance arrangement closely, so must apply high voltage between minus plate and positive plate.Therefore, extraction electrode (extraction electrode) (gate electrode) is distributed between described minus plate and the described positive plate, so that described negative electrode and described extraction electrode are more approaching, causes the field-causing electron emission thereby apply low-voltage between described electrode.

Figure 75 has described the sectional view of the structure of this conventional FED example.In this example, as a kind of cathode construction, so-called Spindt (deriving from a people's name) the type structure of having described cone shape is (for example referring to C.A.Spindt and other three people, Journal of Applied Physics, (U.S.), 1976, the 47th volume, 5248-5263 page or leaf and Japanese laid-open patent application publication 2002-203473).

Described FED comprises minus plate 1100 and towards the positive plate 1200 of described minus plate 1100.Described minus plate 1100 comprises base material 1120 and towards described negative electrode 1110 and the extraction electrode 1140 of insulation film 1130 is arranged, has formed negative electrode 1110 therebetween on described base material 1120.Formed many negative electrodes 1110 and many extraction electrodes 1140, and the distribution that meets at right angles of all described relatively negative electrode 1110 of each extraction electrode 1140.On described base material 1120, many negative electrodes 1150 are distributed in negative electrode 1110 on the surface of described extraction electrode one side.

In each extraction electrode 1140, many aperture parts 1160 distribute the size of described aperture part 1160 and electronics e corresponding to each negative electrode 1150 ^-Size the same, thereby negative electrode 1150 electrons emitted can be passed.And the scanner driver (not showing) that applies scanning voltage to each extraction electrode 1140 circulations is electrically connected with each extraction electrode 1140.On the other hand, be electrically connected with each negative electrode 1110 to the data driver (not showing) that each negative electrode 1110 selectivity apply voltage according to picture signal.

Each negative electrode 1150 distributes corresponding to certain position with matrix form, and wherein said extraction electrode 1140 and negative electrode 1110 are intersected mutually, and the low surface of each negative electrode 1150 is connected electrically on the corresponding negative electrode 1110.Apply predetermined electric field by selectivity, described negative electrode 1150 is launched electronics according to tunnel-effect by its tip portion.In addition, in typical FED, 1150 groups on the negative electrode of predetermined quantity (for example 1000) is corresponding to 1 pixel.

Described positive plate 1200 comprise make by glass material etc. and be optically transparent transparent base 1210 and positive electrode 1220, described positive electrode 1220 is distributed in described transparent base 1210 on the surface of described minus plate 1,100 one sides.Form the many positive electrodes 1220 corresponding with described negative electrode 1110.And, can be according to injecting electronics e ^-Come luminous fluorescent material to be applied on the surface of more approaching described transparent base 1,210 one sides of described positive electrode 1220, to form fluorescence membrane 1230.And described positive electrode 1220 can be made by transparent conductive material such as ITO (indium-tin-oxide), and described fluorescence membrane 1230 can be formed on the surface of more approaching described minus plate 1,100 one sides of described positive electrode 1220.

In having the FED of this structure, when optionally applying voltage between described extraction electrode 1140 and negative electrode 1110, field-causing electron occurs in the negative electrode 1150 on the crosspoint of described extraction electrode 1140 and described negative electrode 1110, electronics e ^-The described positive electrode 1220 of directive.By described negative electrode 1150 electrons emitted e ^-Pass the pore (not showing) that is arranged in positive electrode 1220,, thereby make described fluorescent material send light with described phosphorescence film 1230 collisions.Required image has just shown by the luminous of described fluorescent material.

In FED, the field-causing electron emission is what to cause by lower voltage, so done by making described negative electrode top become most advanced and sophisticated shape to come the local various trials that improve electric-field intensity, and CNT be used in gradually these attempt in (for example, referring to Yahachi Saito, Journal of The Surface ScienceSocietyof Japan, the 19th volume, the 10th phase, the 680-686 page or leaf).For example, proposed to use the FED of SWCN, described SWCN is formed on the tip of silicon (Si) wafer as negative electrode by hot CVD (chemical vapour deposition (CVD)) method.(for example, with reference to the 49th enlarged meeting summary of Japan Society of Applied Physicsand Related Societies, 29p-k-7).And, it is reported, behind conventional method formation silicon transmitter, the film that formation is made by the metallic catalyst that is used to form CNT, and remove catalyst on the gate electrode by anti-etching (etch-back) method, CNT only is grown in the tip portion (referring to Nikkan Kogyo shimbun, on April 11st, 2002, " electronics from the CNT field emission device under the 4V low-voltage is launched ") of described transmitter by the hot CVD method.

In this application, described CNT is not to use separately, and has been to use the carbon nanotube structure that comprises many CNTs.Can use conventional semiconductor technology for example photoetching process and CVD (chemical vapour deposition (CVD)) as the method for making carbon nanotube structure.And, disclose outside (foreign) material has been introduced the technology of CNT (for example, referring to Masafumi Ata and other three people, Japanese Journalof Applied Physics (Jpn.J.Appl.Phys.), nineteen ninety-five, the 34th volume, 4207-4212 page or leaf and Masafumi Ata and other two people, Advanced Materials, (Germany), nineteen ninety-five, the 7th volume, 286-289 page or leaf).

And as other technology related to the present invention, they are magnetic recording device and magnetic recording apparatus.Their principle is such, and promptly magnetic material is magnetized, and by coercivity, and the direction of magnetization is corresponding to 1 or 0, the perhaps analog quantity of signal, the magnetization degree when described signal has write down described magnetic material magnetization.In this case, the perpendicular magnetization of magnetization and vertical described recording surface is all actual in the face on parallel record surface uses.In recent years, needing further to improve packing density, usually, generally is to improve packing density by reducing magnetization length, and just the up-to-date knowledge known to the inventor openly is not applied to CNT the trial of described magnetic recording technology at present.

In order to obtain FED that uses CNT etc., a kind of like this technology must be arranged, it can form the catalyst fine pattern of being made by transition metal etc., thereby makes CNT regularly arranged by meticulous Pareto diagram.But usually, photoetching process is the unique technical that can reach large-scale production to a certain extent.Photoetching process is a kind of major technique of suitable formation two-dimensional structure body, so photoetching process and be not suitable for forming three-dimensional structure, for example carbon nanotube structure.

And, in order to form the fine pattern of metallic catalyst by photoetching process, also there is not method to reduce the wavelength of energy beam at present, in the prior art, be difficult to reduce again described wavelength.Therefore, under the situation of the pattern that forms transition metal etc. by photoetching process, the size at the interval between transition metal pattern and the pattern is by the decision of the wavelength of described energy beam, and in the prior art, described size can not be reduced to 0.05 micron (50 nanometer) or littler, and the interval between the pattern (spacing) can not be reduced to 100 nanometers or littler.In other words, routine techniques has the problem of the pattern that can not form meticulousr metallic catalyst etc.

And in the negative electrode that uses conventional CNT, so many CNT tight distribution are the problem that has the electric-field intensity on each carbon nano tube surface obviously to descend.Therefore, in order to improve the electric-field intensity on the carbon nano tube surface, must between negative electrode and extraction electrode or positive electrode, apply high voltage, so be difficult to reduce voltage.

In addition, the shape and the direction of growth of forming many CNTs of described negative electrode are uneven, so the quantity of emission electronics also is uneven, thereby have the problem that brightness changes.

Summary of the invention

As above-mentioned, first purpose of the present invention has provided a kind of method of making tubular carbon molecule, and it can be with meticulousr interval rule arranging nanotube.

Second purpose of the present invention provides the tubular carbon molecule of arranging with meticulousr interval rule, and it is suitable for making FED, recording equipment etc.

The 3rd purpose of the present invention provides method and the recording equipment of making recording equipment, and described recording equipment can further improve packing density by using the carbon molecule of arranging with meticulousr interval rule.

The 4th purpose of the present invention provides the field-causing electron ballistic device of making the field-causing electron method for transmitting and being obtained by described method, the large-scale production of described method energy comprises the field-causing electron ballistic device of negative electrode, in described negative electrode, CNT is arranged with meticulousr interval rule.

The 5th purpose of the present invention provides the method for making display unit and the display unit that is obtained by described method, described method can be produced the display unit at meticulous interval on a large scale, described display unit comprises that by use the field-causing electron ballistic device of negative electrode clearly shows more distinct image, in described negative electrode, CNT is arranged with meticulousr interval rule.

The method that the present invention makes tubular carbon molecule comprises: the catalyst alignment step, and it has the metal of catalysis by melting to distribute to tubular carbon molecule, and described fusing reaches by the modulation heat distribution; And the growth step of growth tubular carbon molecule.

Tubular carbon molecule of the present invention is to form like this, promptly by melting to arrange tubular carbon molecule is had the metal of catalysis and has the metallic growth tubular carbon molecule of catalysis by use, and described fusing reaches by the modulation heat distribution.

The method that the present invention makes recording equipment comprises: the catalyst alignment step, and it arranges the metal that tubular carbon molecule is had catalysis by melting, and described fusing reaches by the modulation heat distribution; And the growth step of growth tubular carbon molecule; Form the tip of described tubular carbon molecule and the homogenization step that described tip is formed open pointed tip (open tip) at predetermined plane; Inserting step, it inserts described magnetic material a tip portion of described tubular carbon molecule at least from described open pointed tip.

The method that the present invention makes the field-causing electron ballistic device comprises: the catalyst alignment step, and it will have the metal arrangements of catalysis on base material to tubular carbon molecule by the modulation heat distribution; Form the negative electrode growth step of negative electrode by the growth tubular carbon molecule.

Field-causing electron ballistic device of the present invention comprises negative electrode, described negative electrode comprises that use has the tubular carbon molecule that the metal of catalysis is grown to tubular carbon molecule, described tubular carbon molecule is arranged on the base material by fusing, and described fusing reaches by the modulation heat distribution.

Make in the method for display unit in the present invention, described display unit comprises the field-causing electron ballistic device and based on the luminous luminous component of electron collision, described electronics is sent by described field-causing electron ballistic device, and the step that forms described field-causing electron ballistic device comprises: the catalyst alignment step, the metal arrangements that it will have catalysis to tubular carbon molecule by fusing is on base material, and described fusing reaches by the modulation heat distribution; Form the negative electrode growth step of negative electrode by the growth tubular carbon molecule.

Display unit of the present invention comprises the field-causing electron ballistic device and based on the luminous luminous component of electron collision, described electronics is sent by described field-causing electron luminous component, described field-causing electron ballistic device comprises negative electrode, described negative electrode comprises that use has the tubular carbon molecule that the metal of catalysis is grown to tubular carbon molecule, described tubular carbon molecule is arranged on the base material by fusing, and described fusing reaches by the modulation heat distribution.

Make in the method for tubular carbon molecule and in the tubular carbon molecule of the present invention in the present invention, form the pattern of being made up of metal by fusing, described metal pair forms tubular carbon molecule and has catalysis, and described fusing reaches by modulating heat distribution.Afterwards, by using the pattern that forms to form tubular carbon molecule.

Make in the method for recording equipment in the present invention, the metal that the formation tubular carbon molecule is had catalysis is by melting to be arranged in required pattern, and described fusing reaches by the modulation heat distribution.Afterwards, have the metallic growth tubular carbon molecule of catalysis, and in predetermined plane, form the tip of tracheary element, and described tip is formed open pointed tip by use.Then, magnetic material is inserted the tip portion of described tubular carbon molecule by described open pointed tip, form magnetosphere.

In recording equipment of the present invention, insert the magnetosphere of each tubular carbon molecule and separate with magnetosphere in other adjacent tubular carbon molecule, so can be on the magnetosphere in each tubular carbon molecule reading writing information exactly.

In the present invention makes the method for field-causing electron ballistic device, in field-causing electron ballistic device of the present invention, make in the method for display unit and in display unit of the present invention in the present invention, the Metal Distribution that will have catalysis to tubular carbon molecule by fusing is on base material, and described fusing reaches by the modulation heat distribution.Afterwards, the growth tubular carbon molecule forms negative electrode.

The accompanying drawing summary

Fig. 1 describes first example of the present invention, promptly makes the schematic diagram of the fusing step in the CNT method;

Fig. 2 is the schematic diagram of the step (deposition step) after the step shown in the description figure l;

Fig. 3 is a schematic diagram of describing step shown in Figure 2 step (growth step) afterwards;

Fig. 4 A and 4B describe second example of the present invention, promptly make the schematic diagram of the height homogenization step in the CNT method;

Fig. 5 A and 5B describe the 4th example of the present invention, promptly make the schematic diagram of the inserting step in the recording equipment method.

Fig. 6 is the schematic diagram that recording equipment shown in Fig. 5 A and the 5B is in an example of recording status;

Fig. 7 describes the present invention to improve one's methods 1, promptly makes the schematic diagram of the fusing step in the CNT method;

Fig. 8 is the schematic diagram that forms the example of heat distribution on substrate surface shown in Figure 7;

Fig. 9 is the plane of another example of heat distribution shown in Figure 7;

Figure 10 is a schematic diagram of describing step shown in Figure 7 step (deposition step) afterwards;

Figure 11 is the part amplification view of substrate surface shown in Figure 10;

Figure 12 is a schematic diagram of describing step shown in Figure 10 step (growth step) afterwards;

Figure 13 be shown in the part amplification view of substrate surface, wherein deposition step is to carry out after forming heat distribution shown in Figure 9;

Figure 14 describes the present invention to improve one's methods 2, promptly makes the schematic diagram of the deposition step in the CNT method;

Figure 15 is a sectional view of improving one's methods of deposition region shown in Figure 14;

Figure 16 is another sectional view of improving one's methods of deposition region shown in Figure 14;

Figure 17 is a schematic diagram of describing step shown in Figure 14 step (growth step) afterwards;

Figure 18 describes the present invention to improve one's methods 3, promptly makes the schematic diagram of the deposition step in the CNT method;

Figure 19 is the part amplification view of substrate surface shown in Figure 180;

Figure 20 is a schematic diagram of describing step shown in Figure 180 step (growth step) afterwards;

Figure 21 describes the present invention to improve one's methods 4, promptly makes the schematic diagram that projection (projection) in the method for CNT forms step;

Figure 22 A-22C is a schematic diagram of describing step shown in Figure 21 step (transfer printing (transferring) step) afterwards;

Figure 23 is a sectional view of improving one's methods describing pattern transferring shown in Figure 22 A-22C;

Figure 24 is another sectional view of improving one's methods of describing pattern transferring shown in Figure 22 A-22C;

Figure 25 is a schematic diagram of describing the step (growth step) after the step shown in Figure 22 C;

Figure 26 describes of the present inventionly to improve one's methods 5, promptly makes the schematic diagram that convexes to form step in the method for CNT;

Figure 27 is a schematic diagram of describing step shown in Figure 26 step (transfer step) afterwards;

Figure 28 is a schematic diagram of describing step shown in Figure 27 step (growth step) afterwards;

Figure 29 is the microphoto of carbon nanotube structure shown in Figure 28;

Figure 30 is the SEM photo of describing around the zone at white portion shown in Figure 29 center;

Figure 31 is the SEM photo of describing around the zone on border between white portion shown in Figure 29 and the black part branch;

Figure 32 A and 32B describe the present invention to improve one's methods 6, promptly make the schematic diagram of the coating formation step in the CNT method;

Figure 33 A and 33B are the schematic diagrames of describing the step (transfer step) after the step shown in Figure 32 B;

Figure 34 is a schematic diagram of describing the described step of Figure 33 B step (growth step) afterwards;

Figure 35 A-35C describes the present invention to improve one's methods 7, promptly makes the schematic diagram of the transfer step in the CNT method;

Figure 36 A-36C describes the present invention to improve one's methods 8, promptly makes the schematic diagram of the catalyst alignment step in the CNT method;

Figure 37 is the schematic diagram of the step (growth step) after the step shown in Figure 36 C;

Figure 38 describes the present invention to improve one's methods 9, promptly makes the schematic diagram that convexes to form step in the CNT method;

Figure 39 A and 39B are the schematic diagrames of describing step shown in Figure 38 step (planarization step) afterwards;

Figure 40 is a schematic diagram of describing step shown in Figure 39 step (growth step) afterwards;

Figure 41 describes of the present inventionly to improve one's methods 10, promptly makes the sectional view of the motherboard (master) in the method for CNT;

Figure 42 A and 42B are the schematic diagrames of describing step shown in Figure 41 step (top surface transfer step) afterwards;

Figure 43 is the schematic diagram of the step (growth step) after the step shown in Figure 42 B;

Figure 44 describes the present invention to improve one's methods 11, promptly makes the schematic diagram of the key-course formation step in the CNT method;

Figure 45 is a schematic diagram of describing step shown in Figure 44 step (growth step) afterwards;

Figure 46 describes first example of the present invention, promptly makes the schematic diagram of the negative electrode formation step in field-causing electron ballistic device method and the manufacturing FED method;

Figure 47 is a schematic diagram of describing step shown in Figure 46 step (separation trough formation step) afterwards;

Figure 48 is a schematic diagram of describing step shown in Figure 47 step (separation trough formation step) afterwards;

Figure 49 is to use the schematic diagram of brief configuration of the FED of field-causing electron ballistic device, and described field-causing electron ballistic device comprises negative electrode shown in Figure 48;

Figure 50 describes the present invention to improve one's methods 12, and promptly separation trough forms the schematic diagram of step;

Figure 51 describes the present invention to improve one's methods 13, promptly makes the schematic diagram of the separation trough formation step in the field-causing electron ballistic device method;

Figure 52 is a schematic diagram of describing the step (separation trough formation step) after the step shown in Figure 51;

Figure 53 is a schematic diagram of describing the step (negative electrode formation step) after the step shown in Figure 52;

Figure 54 describes the present invention to improve one's methods 14, and promptly separation trough forms the schematic diagram of step;

Figure 55 describes the present invention to improve one's methods 15, promptly makes the schematic diagram of the negative electrode formation step in field-causing electron ballistic device method and the manufacturing FED method;

Figure 56 is a schematic diagram of describing the step (separation trough formation step) after the step shown in Figure 55;

Figure 57 is a schematic diagram of describing the brief configuration of the FED that uses the field-causing electron ballistic device, and described field-causing electron ballistic device comprises the negative electrode shown in Figure 56;

Figure 58 describes the present invention to improve one's methods 16, and promptly separation trough forms the schematic diagram of step;

Figure 59 A and 59B describe the 6th example of the present invention, promptly make the schematic diagram of the negative electrode formation step in field-causing electron ballistic device method and the formation FED method;

Figure 60 is a schematic diagram of describing the step (negative electrode formation step) after the step shown in Figure 59 B;

Figure 61 is a schematic diagram of describing the step (separation trough formation step) after the step shown in Figure 60;

Figure 62 is a schematic diagram of describing the brief configuration of the FED that uses the field-causing electron ballistic device, and described field-causing electron ballistic device comprises the described negative electrode of Figure 61;

Figure 63 A and 63B describe the present invention to improve one's methods 17, and promptly negative electrode forms the schematic diagram of step;

Figure 64 describes the present invention to improve one's methods 18, and promptly negative electrode forms the schematic diagram of step;

Figure 65 A and 65B are the schematic diagrames of describing the step (negative electrode formation step) after the step shown in Figure 64;

Figure 66 A and 66B describe the present invention to improve one's methods 19, and promptly negative electrode forms the schematic diagram of step;

Figure 67 A and 67B describe the present invention to improve one's methods 20, i.e. the schematic diagram of the reduction/deposition step in the catalyst alignment step;

Figure 68 A and 68B are the 7th examples of description the present invention, i.e. the schematic diagram of deposition part in making field-causing electron ballistic device method and manufacturing FED method and separation trough formation step;

Figure 69 A-69C is a schematic diagram of having described the described step of Figure 68 B step (extraction electrode formation step) afterwards;

Figure 70 is a schematic diagram of describing the described step of Figure 69 C step (negative electrode formation step) afterwards;

Figure 71 is a sectional view of describing the brief configuration of the FED that uses the field-causing electron ballistic device, and described field-causing electron ballistic device comprises the negative electrode shown in Figure 70;

Figure 72 A-72C has described the present invention to improve one's methods 21, i.e. the schematic diagram that convexes to form step, separation trough formation step and key-course formation step in the catalyst alignment step;

Figure 73 A-73C is a schematic diagram of describing the step (extraction electrode formation step) after the step shown in Figure 72 C;

Figure 74 is a schematic diagram of describing the step (negative electrode formation step) after the step shown in Figure 73 C;

Figure 75 is a sectional view of describing conventional FED structure.

Preferred forms of the present invention

Preferred embodiment of the present invention can pass through with reference to the following detailed description of accompanying drawing.

" making the method for tubular carbon molecule "

(first example)

At first, with reference to accompanying drawing 1-3, first example that the present invention makes the method for tubular carbon molecule is described below.In the method for this example, formed the carbon nanotube structure that comprises along many CNTs of arranging on the direction, the method of this example comprises " catalyst alignment step " and uses " growth step " of the metallic growth CNT with catalysis, described catalyst alignment step comprises by fusing arranges the metal that CNT is had catalysis, and described fusing reaches by the modulation heat distribution.The gained carbon nanotube structure can be used as the negative electrode of FED for example or recording equipment.

In this case, described CNT comprises many forms, and for example many CNTs are arranged in the carbon nanotube structure of fine pattern, introduce the carbon nanotube structure of exterior material in CNT or many CNTs are arranged in fine pattern and introduce the carbon nanotube structure of exterior material in CNT.In this example, the carbon nanotube structure that many CNTs are arranged in fine pattern will be described.

And, in this example, described catalyst alignment step comprises " fusing step " and " deposition step ", described fusing step is to apply modulation heat distribution 11 to the surface of base material 10, to melt the surface of described base material 10, described deposition step is according to heat distribution 11 that second material deposition is in place, i.e. heat radiation by described base material 10 surfaces is deposited as required pattern.

(fusing step)

At first, with reference to the described fusing step of the following description of Fig. 1.In this case, described base material 10 is made by first material, and will join as second material of deposition materials in described first material.Described second material has the normal segregation coefficient, promptly by adding the fusing point that described second material reduces described first material to described first material, and after heat fused, under the situation that described first material solidifies in cooling procedure, second material is retained in the character of fusion zone.In this example, can use silicon (Si) base material,, can use iron (Fe) as metallic catalyst as second material as the base material of making by first material 10.

The thickness of described base material 10 is for example 40 nanometers, and the supporter 10A that it is made by for example silicon supports.Have at base material 10 under the situation of adequate thickness, described supporter 10A is optional.

As described first material, can use any other semi-conducting material (for example germanium (Ge) etc.) and metal material (for example refractory metal such as tantalum (Ta), tungsten (W) or platinum (Pt) or its alloy) to replace above-mentioned silicon.

As second material, can use vanadium (V), manganese (Mn), brill (Co), nickel (Ni), molybdenum (Mo), tantalum (Ta), tungsten (W) or platinum (Pt) to replace above-mentioned iron (Fe) as the metallic catalyst that forms CNT.And can use yttrium (Y), lutetium (Lu), boron (B), copper (Cu), lithium (Li), silicon (Si), chromium (Cr), zinc (Zn), palladium (Pd), silver (Ag), ruthenium (Ru), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), terbium (Tb), dysprosium (Dy), holmium (Ho) or erbium (Er).And, can use two or more that are selected from above-mentioned material simultaneously, perhaps can use two or more the compound (compound) that is selected from above-mentioned material.And, can use metal phthalocyanine compound, metallocene or slaine.Can use oxide or silicide.

In addition, according to purposes, can use the dielectric material of forming by nitride, oxide, carbide, fluoride, sulfide, nitrogen oxide, carbon-nitride or the O-C compound of metallic element or metalloid element (for example aluminium (Al), silicon (Si), tantalum (Ta), titanium (Ti), zirconium (Zr), niobium (Nb), magnesium (Mg), boron (B), zinc (Zn), plumbous (Pb), calcium (Ca), lanthanum (La) or germanium (Ge)) as described second material.More particularly, can use AlN, Al ₂O ₃, Si ₃N ₄, SiO ₂, MgO, Y ₂O ₃, MgAl ₂O ₄, TiO ₂, BaTiO ₃, SrTiO ₃, Ta ₂O ₅, SiC, ZnS, PbS, Ge-N, Ge-N-O, Si-N-O, CaF ₂, LaF, MgF ₂, NaF, TiF ₄Deng.And, can use to comprise that any of these material is as the material of key component, these mixtures of material (AlN-SiO for example ₂).In addition, can use magnetic material such as iron (Fe), cobalt (Co), nickel (Ni) or gallium (Gd).

Described heat distribution 11 comprises high-temperature area 11H and low-temperature region 11L, comes to adjust from the space surface temperature of described base material 10 by utilizing emittance bundle 12, thereby periodically forms described high-temperature area 11H and low-temperature region 11L.Described energy beam 12 is the directional lights with single wavelength and homophase, in this example, can use the XeCl PRK to obtain high output.

In this example, described heat distribution 11 applies described energy beam 12 diffraction by diffraction grating 13.Described diffraction grating 13 comes from space adjustment energy size by making energy beam 12 diffraction, and in described diffraction grating 13, linear groove 13A for example can be distributed on the optical flat with uniform period interval P along the one dimension direction, in this example, described linear parallel groove 13A for example can be distributed on the plate of being made by quartz material with for example all period interval P of 1 micron along the one dimension direction, and the one dimension direction that described diffraction grating 13 distributes along described groove 13A is adjusted the energy size of described energy beam 12.In addition, described diffraction grating 13 might not be confined to form the diffraction grating of projection and recessed (for example groove), for example, can use such diffraction grating, it has transmission part and the described energy beam 12 impenetrable non-transmission parts that the described energy beam 12 by formation such as printings can pass.

When using this diffraction grating 13, can form high-temperature area 11H along the propagation direction of described groove 13A, and described high-temperature area distributes along the one dimension direction that described groove 13A distributes linearly.The space periodic T of heat distribution 11 (being the interval (spacing) between the high-temperature area 11H) is by the wavelength X decision of all period interval P in the diffraction grating 13 and energy beam 12.Described wavelength X is short more, and perhaps described all period interval P are short more, and the space periodic T of so described heat distribution just reduces manyly more.

The energy size of described energy beam 12 is set, and described like this temperature just can reach the temperature that the substrate surface among the described low-temperature region 11L can melt.Therefore, all surfaces of described base material 10 just can melt.At this moment, when PRK was used as energy beam 12, the big I of described energy was by the quantity of radiation decision of led pulse.In this example, that the energy size of described energy beam 12 for example is 350 millis is burnt/centimetre ², and the quantity of pulses of radiation is 10.

Then, with reference to Fig. 2, following description deposition step.When behind the surface melting of base material 10 described in the fusing step, when stopping using energy beam 12 radiation, the temperature on described base material 10 surfaces descends gradually, and the surface of described like this base material 10 just can be solidified.At this moment, second material (Fe) moves into described high-temperature area 11H, and last, described second material is deposited in the cured portion of high-temperature area 11H.Therefore, described second material is deposited on the position corresponding to described high-temperature area 11H, forms the deposition region 14 that is essentially flat shape.Therefore, can obtain having the base material 15 of the pattern of deposition region 14.

In this case, " flat shape " expression is flat basically, and the height that leaves described base material 15 surfaces is the same with surface roughness little, for example less than 1 nanometer.

When described high-temperature area 11H along the one dimension direction during corresponding to described groove 13A linear array, described deposition region 14 forms the linearity pattern of arranging along the one dimension direction corresponding to described high-temperature area 11H.The width of described deposition region 14 (live width) W (being the size of deposition region 14 on the modulated direction in heat distribution zone 11) is by the content decision of second material (iron) in the described base material 10, so the content of described second material is high more, the width W of described deposition region 14 is big more.In principle, the width W of described deposition region 14 can be the arbitrary value greater than the atomic size of second material, so, by controlling the content of second material in the described base material 10, the width W of described deposition region 14 can be less than 50 nanometers, and this can not obtain for conventional photoetching technique.

The occurrence of the width W of described deposition region 14 is by the decision of the purposes of second material and described deposition region 14.For example, as following shown in Figure 3, under the situation of many CNTs 16 by the described carbon nanotube structure 17 arranged linearly as the iron of catalyst deposit in deposition region 14, the width W of described deposition region 14 is preferably in the scope of 0.4 nanometer-less than 50 nanometers, because the size minimum of described CNT is 0.4 nanometer.

The width W of described deposition region 14 is more preferably in the scope of 0.4 to 30 nanometer, because the size range of many CNTs 16 is the 0.4-30 nanometer.

And the width W of described deposition region 14 is more preferably in the scope of 0.4-10 nanometer.This is to reduce because of the possibility of many CNTs along the intensive formation of width of described deposition region 14, so under the situation of carbon nanotube structure 17 as for example field-causing electron ballistic device (transmitter), can prevent that each CNT 16 lip-deep electric-field intensity from descending, and can reduce the voltage that electric field transmitted must apply.And, this is because when described carbon nanotube structure 17 for example is used as recording equipment (memory), must broad ways in a deposition region 14, only form a CNT 16 in some cases, so the size of described CNT 16 is preferably mated with the width W of described deposition region 14.

And, interval L between the described deposition region 14 (being the interval (spacing) between the deposition region 14 on the modulated direction of heat distribution 11) is by the space periodic T decision of described heat distribution 11, all period interval P of promptly described diffraction grating 13 and the wavelength X of described energy beam 12.Described wavelength X is short more, and perhaps described all period interval P are more little, and the interval L between the described deposition region 14 will descend manyly more, and can the described deposition region 14 of the L shaped one-tenth in meticulous interval, and this can not obtain for conventional photoetching process.

Interval L between the described deposition region 14 is 100 nanometers or littler preferably for example.In conventional photoetching process, described resolution limit is 50 nanometers, and therefore, the minimum pattern that is formed by conventional photoetching process comprises the projection of recessed and 50 nanometers of projection, 50 nanometers of 50 nanometers for example, and between the described pattern is 2 times of described resolution limit at interval, i.e. 100 nanometers.In addition, the interval L between the described deposition region 14 is more preferably 50 nanometers or littler.This is because the resolution limit of conventional electrical bundle photoetching is about 25 nanometers, thus be 2 times of described resolution limit at interval between the minimum pattern that forms by the photoetching of conventional electrical bundle, i.e. 50 nanometers.

Finish described catalyst alignment step like this, and on described base material 10, form the base material 15 that comprises described deposition region 14.

(growth step)

Then, with reference to Fig. 3, following description growth step.CNT 16 is grown on described base material 15 by CVD (chemical vapour deposition (CVD)) method.As growing environment, for example can use methane (CH ₄) as carbon compound, it is the material of CNT 16, the iron that is deposited on the described deposition region 14 is used as catalyst, and described growth step carried out 15 minutes at 900 ℃.The only growth in described deposition region 14 of described CNT 16, therefore many CNTs 16 are formed on the described base material 15 according to the pattern linearity carbon nanotubes arranged structure 17 of described deposition region 14.The diameter of described CNT 16 is by carbon compound and growing environment decision as the material of CNT 16.

Therefore, in this example, form the pattern of deposition region 14, and arrange by fusing, described deposition region 14 is by having the iron of catalysis to make to forming described CNT 16, described fusing reaches by the modulation heat distribution, described CNT 16 is by the pattern growth of described deposition region 14, so by controlling the pattern that described heat distribution 11 can the L shaped one-tenth in meticulous interval has the deposition region 14 of fine width W, described fine width W and meticulous interval L are that conventional photoetching process institute is unapproachable, can form CNT 16 corresponding to the regularly arranged carbon nanotube structure 17 of the pattern of described deposition region 14 on described base material 15.

And, comprise that the base material 15 of the pattern of deposition region 14 can obtain by dry method, so, to compare and use conventional photolithographic technology, this example can have some advantages, and easier as producing, repeatability is better, and cost reduces.

In addition, in this example, described heat distribution 11 is applied to by on the surface that comprises the base material 10 that iron makes as the silicon of additive, after the surface of melting described base material 10, described base material 10 lip-deep heats have have just scattered and disappeared, so iron optionally is deposited on the position corresponding to described hot subregion 11, be essentially the pattern of the deposition region 14 of flat shape with formation.

In addition, in this example, described heat distribution 11 applies by making described energy beam 12 diffraction, so, when all period interval P in the described diffraction grating 13 reduce, the space periodic T of described heat distribution 11 is control easily just, and the interval L between the described deposition region 14 is meticulousr, thereby higher accurately.

(second example)

Then, following description second example of the present invention.Described example also is included in according to first example and forms height homogenization step behind the described carbon nanotube structure 17, and described tip formed open pointed tip (open end), described height homogenization step is the tip that forms described CNT 16 at predetermined plane.

In this example, the tip location of the described CNT 16 of " highly " expression, i.e. distance between the tip of the surface of base material 10 and described CNT 16.Therefore, the height of described CNT 16 can be different with the length (i.e. actual size on bearing of trend) of described CNT 16.

(height homogenization step)

With reference to Fig. 4 A and the described height homogenization step of the following description of 4B.At first, shown in Fig. 4 A, form fixed bed 18, to fix described CNTs 16 by described fixed bed 18 around described CNT 16.As the material of described fixed bed 18, for example can use insulating materials (as silica (SiO ₂), silicon nitride (SiN), polyimides, polymethyl methacrylate (PMMA) or metal oxide film film) or semi-conducting material such as silicon or germanium.As the method that forms fixed bed 18, can use for example plasma enhanced CVD (PECVD) method, PVD (physical vapour deposition (PVD)) method, SOG (glass rotation (spin on glass)) method etc.The not concrete restriction of the thickness of described fixed bed 18.

Then, shown in Fig. 4 B, for example described CNT 16 polishes by CMP (chemically mechanical polishing) method with described fixed bed 18.Therefore, the tip of described CNT 16 is arranged among the identical plane P L, and opening is carried out by polishing in described tip, forms open pointed tip 16A.

Therefore, can obtain with the CNT 16 of required arranged in patterns on described base material 15, its tip is formed among the predetermined plane PL, and described tip forms open pointed tip 16A.So the height of the CNT 16 in the described carbon nanotube structure 17 can obtain homogenizing.And, form described fixed bed 18 around described CNT 16, to fix described CNTs by described fixed bed 18.Therefore, described CNT 16 can be more tough and tensile, and described carbon nanotube structure 17 can easier processing.

In this example, the tip of described CNT 16 is arranged in the identical plane P L.For example,,, also can carry out the electric field transmitted of all CNTs 16, thereby obtain uniform emission characteristics as under the situation of FED at carbon nanotube structure 17 even surperficial angled carbon nanotubes grown 16 with described base material 10 is arranged.And when the tip of described CNT 16 was open pointed tip 16A, described electric field transmitted characteristic can be better, thereby can carry out electric field transmitted under low-voltage.

In this example, described when polishing shown in Fig. 4 B, fixed bed 18 is as the situation of plane layer; But polishing and fixed bed 18 that be in the described state of Fig. 4 A can be used for for example FED.In this case, described CNT 16 is fixing by fixed bed 18, so described CNT 16 can be harder, described carbon nanotube structure 17 can easily be handled.

(the 3rd example)

Then, as the method for the manufacturing CNT of the 3rd example of following description the present invention.In the method for the invention, material requested is included in the tip portion of the CNT 16 in the growth step of described first example.Gained carbon nanotube structure 17 can be used for many purposes according to the material of for example being introduced, and in this example, by introducing magnetic material such as iron, described like this carbon nanotube structure 17 just can be used as recording equipment.

As the method for introducing material requested when the described CNT 16 of growth, can use VLS (gas phase-liquid phase-solid phase) method as one of CVD method.Described VLS method has been used such mechanism, promptly decomposes the gas that comprises carbon, forms to comprise that carbon and the alloy with metal of catalysis drip, and described CNT 16 is grown in described alloy along a direction and drips.In described VLS method, when 16 growths of described CNT, move on to the tip of described CNT 16 as the iron of catalyst, so iron can be introduced in the tip of described CNT 16.Therefore, just can obtain described carbon nanotube structure 17 (CNT 16 that comprises the iron that is arranged in its tip is arranged in required pattern).Iron be introduced into phenomenon in the tip of described CNT 16 see above described, Masafumi Ata and other three people, Japanese Journal of Applied Physics (Jpn.J.Appl.Phys.), nineteen ninety-five, the 34th volume, 4207-4212 page or leaf).

In this example, iron for example is deposited in the described deposition region 14, and when described CNT 16 was grown as the iron of catalyst by use, iron was introduced in the tip of described CNT 16.Therefore, during changes in material in being deposited on described deposition region 14, material requested can be introduced in the tip of described CNT 16.Material requested as introducing in the described CNT 16 can use any material that can be used as the metallic catalyst that forms CNT, and the object lesson of material requested is identical with second examples of material described in first example.

And, according to the purposes difference, can use described in first example dielectric material as second example of material as the material of introducing in the described CNT 16.

Therefore, in this example, when described CNT 16 was grown, iron was introduced in the tip of CNT 16, so just can obtain described carbon nanotube structure 17 (CNT 16 of introducing iron in its tip is arranged in required pattern).

" making the method for recording equipment "

(the 4th example)

Then, the method for the manufacturing recording equipment of the 4th example of following description the present invention.The method of this example comprises inserting step, is about to magnetic material and inserts the tip portion of described CNT 16 from the open pointed tip 16A of described CNT 16, and described CNT 16 has uniform height, and it derives from described second example.Gained carbon nanotube structure 17 can for example be used for recording equipment.

(inserting step)

With reference to Fig. 5 A and 5B, the described inserting step of following description.At first, as described in Fig. 5 A, by for example spin-coating method, vapour deposition process or PVD method, the film of being made by for example magnetic material (as iron) 19 is formed on the fixed bed 18, with sealing (block) described open pointed tip 16A.Simultaneously, described film 19 enters described CNT 16 by described open pointed tip 16A.

Then, shown in Fig. 5 B, described film 19 polishes by for example CMP method, up to exposing described fixed bed 18, thereby removes the film 19 outside the part that enters in the described CNT 16.Therefore, the magnetosphere 19A that is fabricated from iron inserts around the tip of described CNT 16, can obtain described CNT 16 (wherein material requested inserts in its tip portion at least).

Form the recording equipment 20 of this example like this.Described recording equipment 20 is included in the CNT 16 of lining up required pattern on the described base material and the magnetosphere 19A that is made up of the magnetic material of the tip portion that inserts described CNT 16 at least.Described recording equipment 20 comprises described carbon nanotube structure 17, wherein said CNT 16 is lined up required fine pattern, the magnetosphere 19A that is fabricated from iron inserts in each CNT 16, so magnetized length just can have little size, this is that conventional photoetching process institute is inaccessiable, and therefore described packing density is just very high.Magnetosphere 19A in the magnetosphere 19A of each CNT 16 of described insertion and other adjacent carbons nanotube 16 separates, so just can carry out accurately read and write information on each magnetosphere 19A.

And under the situation of second example, the tip of described CNT 16 is formed in the predetermined plane, and described tip is open pointed tip 16A.Therefore, the height of the CNT 16 in the described carbon nanotube structure 17 can be a homogenizing.In addition, described fixed bed forms around described CNT 16, to fix described CNTs 16 by described fixed bed 18.Therefore, described CNT 16 can be harder, and described recording equipment 20 can be handled easily.

Fig. 6 has described the example of the recording status in the recording equipment 20.In described recording equipment 20, as shown by arrows, record of signal (writing) and reproduction (reading) can be undertaken by the direction of magnetization of controlling described magnetosphere 19A.When the write and read signal, described signal can for example write by generating magnetic flux in a predetermined direction with thin volume (fine coil), and described signal can be read by the GMR head, and perhaps the write and read signal can be finished by so-called magneto-optic system.

Write and read can be as following on described recording equipment 20 by magneto-optic system for example.On described recording equipment 20, write and finish by following step.The temperature of the magnetosphere 19A that is fabricated from iron is brought up to the Curie temperature, the direction of magnetization of described magnetosphere 19A is lined up predetermined direction (puncturing pattern) by bias field.Afterwards, the direction of magnetization of described bias field is arranged in the direction opposite with described puncturing pattern, by using laser beam only to improve the temperature of the magnetosphere 19A of particular carbon nanotube 16, the spot diameter of described laser beam reduces by optical lens (not showing), and stop to use laser beam irradiation, thereby the direction of magnetization of described magnetosphere 19A is changed over direction opposite when deleting.And, undertaken by for example following step from the read operation of recording equipment 20.Magnetosphere 19A laser beam irradiation in the described CNT 16 to monitor the radiative Kerr anglec of rotation of described laser beam, therefore just can obtain the direction of magnetization of each magnetosphere 19A as reproducing signal.Simultaneously, in this example, described magnetosphere 19A is separated by CNT 16, thus just can keep the stable predetermined direction of magnetization, and can not influence the magnetosphere 19A in the adjacent carbons nanotube 16.

Therefore, comprised described carbon nanotube structure 17 (wherein said CNT 16 is lined up required fine pattern) in this example, and the magnetosphere 19A that is fabricated from iron inserts in each CNT 16, so can obtain having the recording equipment 20 of high packing density.And described magnetosphere 19A is separated by CNT 16, thus can keep the stable predetermined direction of magnetization for a long time, and do not influence the magnetosphere 19A in the adjacent carbons nanotube 16.Therefore, improved the reliability of described recording equipment.

" making improving one's methods of tubular carbon molecule "

Before describing the method for making field-causing electron ballistic device and manufacturing FED, improve one's methods (1-11) of the manufacturing CNT of following first example of description the present invention.Can be used for making CNT 16 by these CNTs of making of improving one's methods, shown in Fig. 4 A and 4B of second example, it highly is a homogenizing.And, by using the CNT of making by improving one's methods, can make as the 3rd the described material requested of example insert its tip portion as described in CNT 16, perhaps make the recording equipment 20 of the 4th Fig. 5 A-6 shown in the example.In addition, may be used on following field-causing electron ballistic device and FED by the described CNT of making of improving one's methods.

(improving one's methods 1)

At first, following description improves one's methods 1 with reference to Fig. 7-13.In described improving one's methods, the energy size of the energy beam of fusing in the step is modulated along two-dimensional directional, i.e. directions X and Y direction are to be applied to directions X heat distribution 31X and Y direction heat distribution 31Y on the surface of described base material 10.

(fusing step)

At first, with reference to the following description fusing of Fig. 7 step.Described directions X 31X comprises directions X high-temperature area 31HX and directions X low-temperature region 31XL, and they are periodically to form by the surface temperature of adjusting the base material 10 on the directions X.Described Y direction heat distribution 31Y comprises Y direction high-temperature area 31HY and Y direction low-temperature region 31YL, and they are periodically to form by the surface temperature of adjusting the base material 10 on the Y direction.

For example making described energy beam 12 that diffraction take place by diffraction grating 32 applies described directions X heat distribution 31X and Y direction heat distribution 31Y, in described diffraction grating 32, arranges non-transmission part 32A and transmission part 32B along two-dimensional directional.As described diffraction grating 32, can use diffraction grating that for example energy beam 12 impenetrable masks is printed on the described non-transmission part 32A etc.

Fig. 8 has described such state, promptly forms heat distribution 33 by pile up directions X Temperature Distribution 31X and Y direction Temperature Distribution 31Y on the surface of described base material 10.As shown in Figure 8, the heat distribution 33 that comprises high-temperature area 33H and low-temperature region 33L is formed on the surface of described base material 10, the position of described high-temperature area 33H is the mutual stacked position of described directions X high-temperature area 31XH and Y direction high-temperature area 31YH, and the position of described low-temperature region 33L is the mutual stacked position of directions X low-temperature region 31XL and Y direction low-temperature region 31YL.Therefore, described high-temperature area 33H arranges along the direction of non-transmission part 32A and transmission part 32B arrangement on two-dimensional directional.

Space periodic TX in the heat distribution 33 on the directions X (being the interval between the high-temperature area 33H (spacing) on the directions X) is by the wavelength X decision of all period interval PX on the directions X in the grating 32 and energy beam 12.And the space periodic TY in the heat distribution 33 on the Y direction (being the interval between the high-temperature area 33H (spacing) on the Y direction) is by the wavelength X decision of space interval PY on the Y direction in the diffraction grating 32 and described energy beam 12.Described wavelength X is more little, and perhaps described all period interval PX and PY are more little, and space interval TX and TY just reduce manyly more in the heat distribution 33.In this example, all period interval PX in the described diffraction grating 32 on the directions X represent the size sum of a transmission part 32B on the size of a non-transmission part 32A on the directions X and the directions X, and all period interval PY in the described diffraction grating 32 on the Y direction represent the size sum of a transmission part 32B on the size of a non-transmission part 32A on the Y direction and the Y direction.

In diffraction grating 32, all period interval PX on the directions X and all period interval PY on the Y direction can be provided with respectively.Therefore, as shown in Figure 9, space interval TX in the described heat distribution 33 on the directions X and the space interval TY on the Y direction can be provided with respectively.

As diffraction grating 32, can use the diffraction grating that forms recessed portion or bossing to replace forming the diffraction grating of non-transmission part 32A and transmission part 32B by the mask printing.Under the situation of using the diffraction grating 32 that forms projection and recessed portion, interval (spacing) between cycle the above recessed portion of time interval directions X (or bossing) in the diffraction grating 32 on the directions X, all period interval PY in the diffraction grating 31 on the Y direction represent that the Y direction is recessed on the interval (spacing) between the part (or bossing).

The energy size of described energy beam 12 is set, and described like this temperature just can reach the temperature that the surface of base material 10 among the low-temperature region 33L can be melted.Therefore, the whole surface of described base material 10 can both be melted.At this moment, when PRK was used as energy beam 12, the big I of described energy was controlled by the quantity of led pulse irradiation.

(deposition step)

Then, with reference to Figure 10 and 11 following description deposition steps.In the fusing step, after all melting on the surface of described base material 10, when stopping with described energy beam radiation, the heat on described base material 10 surfaces just scatters and disappears, described like this second material just is deposited in the position corresponding to described heat distribution 33, promptly, therefore, formed the deposition region 34 that is essentially flat shape corresponding to the zone of high-temperature area 33H.So, obtain having the base material 35 of the pattern of deposition region 34.

When described high-temperature area 33H is arranged on the surface of described base material 10 along two-dimensional directional, formed the deposition region 34 of dot pattern, described dot pattern is arranged on the surface of described base material 10 along two-dimensional directional corresponding to described high-temperature area 33H.In described deposition region 34, size (diameter) DY on (diameter) DX of the size on the directions X and the Y direction is by the content decision of second material in the described base material 10.The content of described second material is big more, and the dimension D X of described deposition region 34 and DY improve big more.The dimension D X of described deposition region 34 and DY can be the arbitrary values greater than the atomic size of described second material, so, by controlling the content of second material in the described base material 10, the DX of described deposition region 34 and DY size can be less than 50 nanometers, this be by conventional photoetching technique can not reach.

The dimension D X of described deposition region and the occurrence of DY are by the decision of the purposes of second material and described deposition region 34; But, for example as shown in figure 12, when when be deposited on described deposition region 34 by use on, forming carbon nanotube structure 37 (wherein many CNTs 36 are two-dimensional arrangements) as the iron of catalyst, the dimension D X of described deposition region 37 and DY preferably in 0.4 nanometer in scope less than 50 nanometers.This is because the diameter minimum of described CNT 36 is 0.4 nanometers.

The dimension D X of described deposition region 34 and DY be the 0.4-30 nanometer more preferably.This is because the diameter of many CNTs 36 is the 0.4-30 nanometer.

And the dimension D X of described deposition region 34 and DY are more preferably in the scope of 0.4-10 nanometer.This is because many CNTs 16 have descended along the possibility of directions X or the intensive formation of Y direction in described deposition region 34, so when described carbon nanotube structure 37 during as field emission and ionization electronic device for example, the lip-deep electric-field intensity that can prevent each CNT 36 descends, and has reduced the voltage that described electric field transmitted must apply.And, this is because when described carbon nanotube structure 37 for example is used as recording equipment (memory), must only form a CNT 36 in the deposition region 34 on directions X and Y direction in some cases, so the dimension D X of the preferred beautiful described deposition region 34 of the diameter of described CNT 36 and DY coupling.

And in described deposition region 34, interval LX on the directions X and the interval LY on the Y direction are by space periodic TX in the described heat distribution 33 and TY decision, the space interval PX in the promptly described diffraction grating 32 and the wavelength X of PY and described energy beam.Described wavelength X is short more, space interval PX and PY in the perhaps described diffraction grating 32 are more little, interval LX between the described deposition region 34 and LY just reduce manyly more, and described deposition region 34 just can form meticulous interval LX and LY, this be conventional photoetching process can not obtain.

Interval LX between the described deposition region 34 and LY be 100 nanometers or littler preferably for example.As above-mentioned, in conventional photoetching process, described resolution limit is 50 nanometers, therefore, the minimum pattern that is formed by conventional photoetching process comprises the projection of recessed and 50 nanometers of projection, 50 nanometers of 50 nanometers for example, and between the described pattern is 2 times of described resolution limit at interval, i.e. 100 nanometers.And interval LX between the described deposition region 34 and LY be 50 nanometers or littler more preferably.This is because the resolution limit in the conventional electrical bundle photoetching process is about 25 nanometers, thus be 2 times of described resolution limit at interval between the minimum pattern that forms by conventional electrical bundle photoetching process, i.e. 50 nanometers.

Finish described catalyst alignment step like this, and on described base material 10, formed the base material 35 that comprises described deposition region 34.

As shown in Figure 9, when the space periodic TX on the directions X in the described heat distribution 33 and the space periodic TY on the Y direction were provided with separately, described as shown in figure 13 deposition region 34 can form ellipse according to described space periodic TX and TY.

(growth step)

Then, with reference to Figure 12, the described growth step of following description.Many CNTs 36 are grown on the described base material 35 by the CVD method.Growth conditions can be for example identical with described first example.36 growths in described deposition region 34 of described CNT are so form described carbon nanotube structure 17 (wherein said CNT 36 is according to the pattern two-dimensional arrangements of described deposition region 34) on described base material 35.

Therefore, in improving one's methods, adjust the energy size of described energy beam 12, to form heat distribution 33, so be formed on the surface of described base material 10 along the pattern of the described deposition region 34 that two-dimensional directional is arranged along two-dimensional directional.

And described energy beam 12 forms heat distribution 33 by described diffraction grating 32 diffraction, so, when the cycle space PX in the described diffraction grating 32 and PY reduced, space periodic TX and TY in the described heat distribution 33 can control easily, and interval LX between the described deposition region 34 and LY just can reduce.

(improving one's methods 2)

Then, with reference to Figure 14-17, following description improves one's methods 2.In described improving one's methods, the surface radiating of described base material 10, protruding on the surface of described base material 10, to form, and described second material is deposited on the tip portion of described projection.

(fusing step)

At first, for example as the step that melts shown in Figure 1 in first example.At this moment, control the energy size of described energy beam 12, to make it to exceed certain value.For example, when using PRK as energy beam shown in first example, can control described energy size by the quantity of control led pulse irradiation, in this was improved one's methods, the quantity of described pulsed irradiation was 100.

(deposition step)

After melt in described fusing step on the surface of described base material 10, when stopping with described energy beam 12 irradiation, if the energy size of the energy beam 12 that applies in the described as shown in figure 14 fusing step exceeds some, protrude corresponding to the surface of the base material 10 of high-temperature area 11H as shown in figure 14, form projection 41.

When described high-temperature area 11H corresponding to described groove 13A during along one dimension direction linear array, described protruding 41 form the pattern of so linear rib (rib) (limit of protrusion), described linear rib is arranged along the one dimension direction corresponding to described high-temperature area 11H.The projection 41 of described base material 10 near surfaces part is solidified, so described second material (iron) is around described most advanced and sophisticated deposition, the described deposition region 42 of the partly solidified formation at described tip.Therefore, described deposition region 42 is formed on described protruding 41 tip portion.Here, described tip portion is the part that comprises the tip of described projection, and wherein said protruding 41 cut along the horizontal H that is parallel to described base material 10 surfaces (with reference to Figure 15 and 16).For example, described as shown in figure 14 deposition region 42 can only be formed in described protruding 41 the tip, and perhaps whole protruding 41 can be deposition region 42 shown in Figure 15.Perhaps, as shown in figure 16, described deposition region 42 can be formed in described protruding 41 the parts between from the tip to the intermediate point.

Obtained comprising the base material 43 of the pattern of projection 41 like this, the deposition region 42 that wherein is fabricated from iron is formed on described protruding 41 tip portion at least.

Here, " projection " expression is from the projection on described base material 43 surfaces, and it highly is 1 nanometer or bigger, and it is higher than the situation of first example midplane shape deposition region 14.

As described in first example, the width of described deposition region 42 (live width) the W size of the deposition region 42 of the modulation direction of described heat distribution 11 (promptly along) is by the content decision of second material (iron) in the described base material 10, the content of described second material (iron) is big more, and the width W of described deposition region 42 just increases many more.In principle, the width of described deposition region 42 can be the arbitrary value greater than the atomic size of described second material, so, by controlling second material content in the described base material 10, the width W of described deposition region 42 can be less than 50 nanometers, and this is that conventional photoetching technique institute is inaccessiable.

In described improving one's methods, different with described first example, described deposition region 42 is projectioies 41, and the sectional area of described deposition region 42 is towards its most advanced and sophisticated decline, so the width of described deposition region 42 can reduce easily.

The same with the width W of the deposition region 14 described in first example, the occurrence of the width W of described deposition region 42 is by the purposes decision of described second material and deposition region 42.For example, as shown in figure 17, when when be deposited on described deposition region 42 by use in, forming the linearly aligned carbon nanotube structure 45 of many CNT 44 as the iron of catalyst, the width W of described deposition region 42 is preferably in 0.4 nanometer arrives the scope less than 50 nanometers, 0.4-30 nanometer more preferably, 0.4-10 nanometer more preferably also, its reason is identical with the reason described in first example.

And the interval L between described protruding 41 (being the interval (spacing) between the deposition region 42 on the modulation direction of described heat distribution 11) is by the cycle interval T of described heat distribution 11 (being the interval P in the described diffraction grating 13 and the wavelength X of described energy beam 12) decision.Described wavelength X is short more, and perhaps described all period interval P are more little, and the interval L between described protruding 41 just reduces manyly more, and described protruding 41 and deposition region 42 just can form meticulous interval, this be conventional photoetching process inaccessiable.For example, the interval L between described protruding 41 is 100 nanometers or littler preferably, 50 nanometers or littler more preferably, and its reason is identical with the described reason of first example.

Finish described catalyst alignment step like this, form the base material that comprises described deposition region 42, described deposition region 42 is positioned on the tip portion that is formed on the projection 41 on the described base material 10.

(growth step)

With reference to Figure 17, many CNTs 44 are grown on described base material 43 by the CVD method.Growing environment is identical with described first example.The only growth in described deposition region 42 of described CNT 44, so form described carbon nanotube structure 45, wherein many CNT 44 linear array are on the most advanced part (extreme tip portion) of the projection 41 of described base material 43.

Therefore, in described improving one's methods, described protruding 41 (wherein its tip portion is made by second material (iron) at least) are formed in the precalculated position of described base material 10, so, the situation that forms flat shape with described pattern is compared, the width of described deposition region 42 is meticulousr, and compares first example and improve one's methods 1, can form meticulousr pattern.

(improving one's methods 3)

Then, with reference to Figure 18-20, following description improves one's methods 3.In described improving one's methods, on the surface of described base material 10, form the projection of arranging, and described second material is deposited on the tip portion of described projection with two-dimensional directional.

(fusing step)

At first, for example, shown in Fig. 7 and 8, improve one's methods and 1 melt step like that.At this moment, as improve one's methods and control energy beam 12 and energy size 2, make it to surpass some.

(deposition step)

In the fusing step, behind the surface melting of described base material 10, when stopping with energy beam 12 irradiation, if the energy of the energy beam 12 that applies in described fusing step size surpasses specific quantity, shown in Figure 18 and 19, the table of described base material 10 is opposed should to be protruded in described high-temperature area 33H, forms projection 51.

When described high-temperature area 33H was arranged on the surface of described base material 10 along two-dimensional directional, described protruding 51 formed the circular cone pattern, are arranged on the surface of described base material 10 corresponding to high-temperature area 11H along two-dimensional directional.The projection 51 of the part of the near surface of described base material 10 is solidified, so second material deposits around described tip, the end at described tip solidifies, and forms deposition region 52.Therefore, described deposition region 52 is formed in described protruding 51 the tip portion.Important and the object lesson of described tip portion with improve one's methods identical with reference to Figure 15 in 2 with 16 described examples.

Obtained comprising the base material 53 of the pattern of projection 51 like this, the deposition region 52 that wherein is fabricated from iron is formed in the described tip portion at least.

In described deposition region 52, size (diameter) DY on size on the directions X (diameter) DX and the Y direction is by the content decision of second material (iron) in the described base material 10, the content of described second material (iron) is big more, and the dimension D X of described deposition region 52 and DY just improve many more.In principle, the dimension D X of described deposition region 52 and DY can be the arbitrary values greater than the atomic size of described second material, so content by second material in the described base material 10 of control, the dimension D X of described deposition region 52 and DY can be less than 50 nanometers, and this is that conventional photoetching technique institute is inaccessiable.

The same with the dimension D X and the DY of the deposition region 34 described in 2 of improving one's methods, the dimension D X of described deposition region 52 and the occurrence of DY are by the purposes decision of described second material and described deposition region 52.For example, as shown in figure 20, when when be deposited on described deposition region 52 by use in, forming described carbon nanotube structure 55 (wherein many CNTs 54 are arranged along two-dimensional directional) as the iron of catalyst, the dimension D X of described deposition region 52 and DY are preferably in 0.4 nanometer arrives the scope less than 50 nanometers, 0.4-30 nanometer more preferably, 0.4-10 nanometer more preferably also, its reason is identical with the reason described in 2 of improving one's methods.

And, interval LX on the directions X between described protruding 51 (being described deposition region 52) and the interval LY on the Y direction are by the space periodic TX and the TY decision of described heat distribution 33, the wavelength X of all period interval PX in the promptly described diffraction grating 32 and PY and described energy beam 12.Described wavelength X is short more, all period interval PX and PY in the perhaps described diffraction grating 32 are more little, interval LX and LY between described protruding 51 (being deposition region 52) reduce manyly more, described protruding 51 and deposition region 52 just can form meticulous interval LX and LY, this be conventional photoetching process can not obtain.Interval LX between described protruding 51 (they being deposition region 52) and LY be 100 nanometers or littler preferably, more preferably 50 nanometers or littler, and its reason is identical in the 2 described methods of improving one's methods.

Finish described catalyst alignment step like this, formed the base material 53 that comprises deposition region 52, described deposition region 52 is positioned at described protruding 5 tip portion.

(growth step)

Then, with reference to Figure 20, many CNTs 54 are grown on the described base material 53 by the CVD method.Growing environment and the described environment facies of first example are together.Described CNT 54 only is grown in the described deposition region 53, has formed described carbon nanotube structure 55 like this, and wherein said CNT 54 is arranged in the most advanced part of the projection 51 of described base material 53 along two-dimensional directional.

Therefore, in described improving one's methods, described protruding 51 pattern (wherein its tip portion is made by described second material at least) is arranged in along two-dimensional directional in the precalculated position of described base material 10, so, compare described first example and the flat shape deposition region in 1 of improving one's methods, formed and have the more deposition region 52 of fine size.

(improving one's methods 4)

Then, with reference to accompanying drawing 21-25, following description improves one's methods 4.In this is improved one's methods, the raised design of being made by transfer materials is formed on by transfer materials (in the case, be catalyst) on the surface of the base material 10 made, the motherboard that the pattern of projection is used as transfer printing, with motherboard pattern transfer that transfer printing is used to base material to be transferred, thereby obtain base material, and on described base material carbon nano-tube.

More particularly, in this example, the catalyst alignment step comprises " fusing step ", " convexing to form step " and " transfer step ", described " fusing step " comprises that the described heat distribution 11 of will modulate according to required pattern is applied on the surface of described base material 10, to melt the surface of described base material 10, the position that described " convexing to form step " is included in corresponding to described heat distribution 11 forms projection, described " transfer step " comprises the motherboard pattern transfer that transfer printing is used to base material to be transferred, forms base material.

(fusing step)

At first, as improve one's methods and melt step as described in 2.At this moment, base material 10 is made by the iron that is used as catalyst in this example.

The material of described base material 10 can be for example any following materials with function that has, and described function comprises that the object lesson of described material is with identical as second examples of material described in first example as the metallic catalyst that forms CNT.

(convex to form step, motherboard forms step)

Then, with reference to Figure 21, following description convexes to form step.In described fusing step, behind the surface melting of described base material 10, when stopping with described energy beam 12 irradiation, the surface temperature of described base material 10 descends gradually, just solidify on the surface of described like this base material 10, at this moment, and when the energy size of the energy beam 12 that applies in the fusing step surpasses certain value, the projection of protruding from the surface of described base material 10 64 just is formed on the position corresponding to described high-temperature area 11H, has the motherboard 65 that the transfer printing of projection 64 uses and is formed on the surface of described base material 10.

When described protruding 64 along the one dimension direction during corresponding to groove 13A linear array, described protruding 64 form linear rib (lug) pattern of arranging along the one dimension direction.Described protruding 64 width (live width) W (being the bottom part size of the projection on the modulation direction of described heat distribution 11) is by fusion temperature and cooldown rate decision.Described fusion temperature can be by the energy size of described energy beam 12 (promptly under the situation of using excimer laser, the quantity of pulsed irradiation) control, and described fusion temperature is high more, and described protruding 64 width W improves many more.Described cooldown rate is controlled by following method, the permanent plant that is about to described base material 10 or this base material 10 is housed places the method for vacuum, the method of gas flow (gas flow), in water or the method for cooling off in the liquid nitrogen, the heating method of cooling simultaneously slowly, described cooldown rate is fast more, and described protruding 64 width W improves many more.In principle, described protruding 64 width W can be the arbitrary value greater than the atomic size of the material of described base material 10, so, by controlling described fusion temperature and cooldown rate, described protruding 64 width W can be less than 50 nanometers, and this is that conventional photoetching process institute is inaccessiable.

The occurrence of described protruding 64 width W is by the purposes decision of following base material.For example, when forming carbon nanotube structure, described protruding 64 width W preferably in 0.4 nanometer in scope less than 50 nanometers, 0.4-30 nanometer more preferably, more preferably 0.4-10 nanometer also, its reason is identical with the reason described in described first example.

And the interval L between described protruding 64 (being the interval (spacing) between the projection 64 on the modulation direction of described heat distribution 11) is by space periodic T (being the wavelength X of all period interval P and the described energy beam 12 of the described diffraction grating 13) decision of described heat distribution 11.Described wavelength X is short more, and perhaps described all period interval P are short more, and the interval L between described protruding 64 just reduces manyly more, so described protruding 64 can form meticulous interval L, this is that conventional photoetching process institute is inaccessiable.For example, the interval L between described protruding 64 is 100 nanometers or littler preferably, more preferably 50 nanometers or littler, and its reason is identical with reason in described first example.

(transfer step)

Then, with reference to Figure 22 A-22C, the described transfer step of following description.At first, for example shown in Figure 22 A, prepare base material 71 to be transferred, on described base material 71, be pre-formed the wiring pattern of conducting film 72.

Then, shown in Figure 22 B, the conducting film 72 of the projection 64 of described motherboard 65 and base material 71 to be transferred is closely opposed mutually.At this moment, in order to improve transfer properties, if necessary, preferably on the direction of arrow A, apply power.And, preferably carrying out heat treated, this is because described transfer properties can further improve.

Afterwards, when described motherboard 65 when base material to be transferred 71 pulls away, shown in Figure 22 C, described protruding 64 tip portion is transferred on the base material to be transferred 71.Therefore, formed base material 74, the wherein said pattern transferring of being made by catalyst metals (iron) 73 is formed on the base material to be transferred 71.Therefore, many base materials 74 can followingly be made, promptly by motherboard 65 with described protruding 64 pattern transfer to many base materials 71 to be transferred.When described protruding 64 when repeating transfer printing and damage, repeat described fusing step once more and convex to form step to recover described protruding 64 sharp-pointed part (shape).

In this article, " described protruding 64 tip portion " expression comprises that part of of described protruding 64 tip, and wherein said protruding 64 along the horizontal H cutting (with reference to Figure 23 and 24) that is parallel to described base material 10 surfaces.Therefore, for example shown in Figure 22 C, have only the tip of described projection can be transferred on the described base material to be transferred 71, perhaps as shown in figure 23, whole protruding 64 can be transferred on the described base material to be transferred 71.Perhaps, as shown in figure 24, the part from described protruding 64 tip to intermediate point can be transferred on the base material to be transferred 71.

Finished described catalyst alignment step like this.

(growth step)

Described pattern transferring 73 is formed on the described base material to be transferred 71, after forming described base material 74, for example as shown in figure 25, CNT 75 can be grown on the described base material 74 as catalyst by using pattern transferring 75, thereby form carbon nanotube structure 76, wherein many CNTs 75 are linearly aligned.Therefore, the carbon nanotube structure 76 that is formed on the described conducting film 72 can be used as the field-causing electron ballistic device.

Therefore, in this is improved one's methods, described heat distribution 11 is applied on the surface of the base material of being made by catalyst metals 10, behind the surface of melting described base material 10, described base material 10 lip-deep heats scatter and disappear, so formed the motherboard 65 with projection fine pattern of 64, described protruding 64 are made by described catalyst metals.By controlling described fusion temperature and cooldown rate, described protruding 64 width W can be less than 50 nanometers, and this is that conventional photoetching process institute is inaccessiable.And by controlling the space periodic T of described heat distribution 11, described protruding 64 can form meticulous interval L, and this is that conventional photoetching process institute is inaccessiable.

And the motherboard 65 with pattern of projection 64 can form by dry method, so, to compare and use conventional photolithographic method, described improving one's methods can obtain following advantage, i.e. and growth is easier, and repeatability is better, and cost is lower.

In addition, described heat distribution 11 applies by making described energy beam 12 diffraction, so, can control the space periodic T of described heat distribution 11 easily by all period interval P that reduce in the diffraction grating 13, thereby reduce the interval L between described protruding 64.

And in described improving one's methods, described at least protruding 64 tip portion is transferred on the described base material to be transferred 71, so, use a motherboard 65 to be transferred on many base materials to be transferred 71, thereby make many base materials 74 described protruding 64.

(improving one's methods 5)

Then, with reference to Figure 26-31, following description improves one's methods 5.Described improve one's methods with improve one's methods 4 identical, different is in the fusing step, the energy size of described energy beam 12 is adjusted along two-dimensional directional (being directions X and Y direction), so that directions X heat distribution 31X and Y direction heat distribution 31Y are applied on the surface of described base material 10.Therefore, simplified relevant 5 the following description of improving one's methods.

(fusing step)

At first, as improve one's methods and melt step as described in 3.Here, described base material 10 is made by the iron (Fe) as catalyst.

The material of described base material 10 can be any energy as the material that forms the metallic catalyst that CNT uses, the object lesson of the material of described base material 10 with identical described in first example as second examples of material.

(convex to form step, motherboard forms step)

Then, and improve one's methods 4 identically, convex to form step and motherboard and form step.As shown in figure 26, can form the motherboard 82 with projection pattern of 81 thus, described protruding 81 are arranged on the surface of described base material 10 along two-dimensional directional.

(transfer step)

Then, as improve one's methods and carry out transfer step as described in 4, as shown in figure 27, form base material 84, wherein the pattern transferring of being made by catalyst metals (iron) 83 is arranged on the surface of described base material 71 to be transferred along two-dimensional directional.Finish described catalyst alignment step like this.

(growth step)

Then, as improve one's methods and carry out growth step as described in 4, as shown in figure 28, CNT 85 is grown on the described base material 84 as catalyst by using pattern transferring 83, forms carbon nanotube structure 86, and wherein many CNTs 85 are arranged along two-dimensional directional.

Figure 29 is the microphoto (amplifying 37.5 times) that is formed on the carbon nanotube structure 86 on the described base material 84 by above-mentioned steps.The point-like white portion of Two dimensional Distribution is corresponding to by using pattern transferring as grow CNT 85 on the described base material 84 of catalyst, and described pattern transferring is from the projection 81 of motherboard 82.

Figure 30 is SEM (SEM) photo of describing around the zone at white portion shown in Figure 29 center (amplifying 50000 times).As shown in figure 30, can confirm that described carbon nano tube growth is in white portion.And Figure 31 describes around the white portion of white portion shown in Figure 29 and the SEM photo (amplifying 50000 times) in the zone between the black part branch.As shown in figure 31, can confirm that described carbon nano tube growth is at described white portion; But, do not observe described CNT in described black part.

Therefore, in this is improved one's methods, form described heat distribution 33 by the energy size of adjusting energy beam 12 on the two-dimensional directional, can form the motherboard 82 with described pattern of protruding 81 thus, described protruding 81 are arranged on the two-dimensional directional.

And, in described improving one's methods, when described protruding 81 tip portion is transferred on the described base material to be transferred 71, is transferred on many base materials to be transferred 71 described protruding 81 by using a motherboard 82, thereby makes many base materials 84.

(improving one's methods 6)

Then, with reference to Figure 32 A-34, following description improves one's methods 6.Described improving one's methods comprises that also coating forms step, wherein the coating of being made by transfer materials (for example catalyst metals) is formed on the described raised surface, and described projection is to be formed on the base material of being made by any materials by the 4 described same procedure of improving one's methods.

(melt step and convex to form step)

At first, the base material 90 that preparation is made by for example silicon, as improve one's methods and 4 melt step and convex to form step has the motherboard 92 of the pattern of projection 91 with formation, and described protruding 91 are positioned on the surface of described base material 90.

(coating formation step)

Then, shown in Figure 32 B, coating 93 is formed on the surface of projection 91.In described improving one's methods, described coating 93 is formed by the iron (Fe) as catalyst, and the uniform basically coating 93 of thickness is formed on the whole surface that comprises described protruding 91 base material 90; But it is uniform that the thickness of described coating 93 might not be wanted.The thickness of described coating 93 is by described protruding 91 height and size decision, and in described improving one's methods, the thickness of described coating 93 for example is 5 nanometers.Described coating 93 can be formed by for example vacuum moulding machine.

As the transfer materials of the material of coating 93 can be any material that forms the metallic catalyst that CNT uses that can be used as, identical as second examples of material in the object lesson of described transfer materials and first example.

(transfer step)

Then, shown in Figure 33 A, the projection 91 of described motherboard 92 and the conducting film 72 of base material to be transferred 71 are closely opposed mutually.At this moment, in order to improve transferring properties, and improve one's methods 4 identically, preferably exert pressure or heat-treat along the direction of arrow A.

Afterwards, when pulling away described motherboard 92 from pending base material 71, for example shown in Figure 33 B, be transferred on the base material to be transferred 71 as the metallic catalyst iron (Fe) of forming described coating 93 (it covers described protruding 91 tip portion).Therefore, form the base material 95 with pattern transferring 94, described pattern transferring 94 is by making with coating 93 identical materials.Therefore, by using a motherboard 92 described coating 93 is transferred on many base materials to be transferred 71, thereby makes many base materials 95.When described coating 93 was damaged owing to the repetition transfer printing, described coating formed step and can repeat once more, forms another layer coating on described protruding 91 surface.At this moment, another layer coating can form after removing residue coating 93, and perhaps another layer coating can be formed on the described residue coating 93.

Here, the implication of " tip portion " and object lesson and identical described in 4 of improving one's methods with reference to Figure 23 and 24.

Finish the catalyst alignment step like this.

(growth step)

After described transfer printing coating 94 is formed on the base material to be transferred 71, for example as shown in figure 34, CNT 96 is grown on the described base material 95 as catalyst by using pattern transferring 94, thereby forms carbon nanotube structure 97, wherein many CNT 96 linear array.

Therefore, in described improving one's methods, described coating 93 is formed on described protruding 91 the surface, thus only have described coating 93 by described transfer materials for example metallic catalyst make.Therefore, described base material 90 can be made by any materials, and the scope of this selection is expanded according to purposes.

And, in described improving one's methods, when the tip portion of the projection 91 that scribbles coating 93 is transferred on the base material to be transferred 71, by using a motherboard 92 described coating 93 is transferred on many base materials to be transferred 71, thereby makes many base materials 95.

(improving one's methods 7)

Then, with reference to Figure 35 A-35C, following description improves one's methods 7.In described improving one's methods, the relative position between motherboard 65 described in improve one's methods 4 " transfer step " and the base material 71 to be transferred repeatedly is transferred to the pattern of described motherboard 65 on the base material to be transferred 71.

At first, shown in Figure 35 A, as improve one's methods shown in 4, carry out the transfer printing first time, on described base material to be transferred 71, form pattern transferring 101A for the first time with reference to Figure 22 A-22C.

Then, shown in Figure 35 B, change the relative position between described motherboard 65 and the base material 71 to be transferred, half of the interval L between for example described protruding 64 is to carry out the transfer printing second time.Afterwards, when described motherboard when described base material to be transferred 71 pulls away, shown in Figure 35 C, the centre position between described first time pattern transferring 101A has formed pattern transferring 101B for the second time.Therefore, obtained having the base material 102 of pattern transferring 101, described pattern transferring 101 comprises pattern transferring 101A and pattern transferring 101B for the first time for the second time.

In described improving one's methods, change the relative position between described motherboard 65 and the base material 71 to be transferred, repeatedly be transferred on the base material to be transferred 71 with pattern, have than first example many base materials 102 of fine pattern more so can make with described motherboard 65.

In described improving one's methods, described transfer printing is carried out twice; But the number of times of described transfer printing can further improve.In this case, the relative position between described motherboard 65 and the base material 71 to be transferred can preferably be regulated according to described transfer printing number of times.

And, in described improving one's methods, change the relative position between described motherboard 65 and the base material 71 to be transferred, half of the interval L between for example described protruding 64, carrying out the transfer printing second time, has evenly spaced first time of pattern transferring 101A and pattern transferring 101B for the second time thereby form; But, described first time pattern transferring 101A and for the second time the interval between the pattern transferring 101B need not to be uniform.

(improving one's methods 8)

Then, with reference to Figure 36 A 1, following description improves one's methods 8.In described improving one's methods, to be pressed on the projection that is formed on the base material by the metal base that catalyst metals etc. is made, with with on the tip of described catalyst metals attached to described projection, described base material is made by any materials by the 4 described same procedure of improving one's methods.

(melt step and convex to form step)

At first, the base material 110 that preparation is made by for example silicon, as improve one's methods and melt step as described in 4 and convex to form step, form the pattern of projection 111, described protruding 111 are positioned on the surface of base material 110 shown in Figure 36 A.

(attachment steps)

Then, shown in Figure 36 B, the projection 111 of described base material 110 and closely opposed mutually by the metal base of making as the iron of metallic catalyst 120.Therefore, shown in Figure 36 C, the iron of forming described metal base 120 is attached to described protruding 111 tip portion, forms the base material 113 with adhesion pattern 112, described pattern 112 is by making with metal base 120 identical materials.At this moment, in order to improve tack, as improve one's methods shown in 4, preferably exert pressure, or heat-treat.

The material of described metal base 120 can be any energy as the material that forms the metallic catalyst that CNT uses, and the object lesson of the material of described metal base 120 is described identical as second examples of material with first example.

Finish described catalyst alignment step like this.

(growth step)

Form described have the base material 113 that adheres to pattern 112 after, for example as shown in figure 37, CNT 114 is grown on the described base material 113 by using the pattern 112 that adheres to as catalyst, thereby forms carbon nanotube structure 116, wherein many CNT 114 linear array.

Therefore, in described improving one's methods, described protruding 111 and metal base 120 closely opposed mutually, adhere to pattern 112 to form by what make with metal base 120 identical materials, described metal base 120 is positioned on described protruding 111 the tip portion, adheres to pattern 112 so form easily by what described metallic catalyst was made.And, can select the material of described base material 110 arbitrarily, so the scope of selecting can be expanded according to purposes.

And, in described improving one's methods, when formation is adhered to the base material 113 of pattern 112 as motherboard, with with described during attached to adhering to pattern 112 and be transferred on the base material to be transferred 71 on described protruding 111 the tip portion, by using a motherboard, form many base materials with on the described base material 71 many to be transferred that adheres to pattern 112 transfer printings.

(improving one's methods 9)

Then, with reference to Figure 38-40, following description improves one's methods 9.Catalyst alignment step in described the improving one's methods comprises " fusing step ", " convexing to form step " and makes " planarization step " of described convex surfaces leveling, described fusing step comprises that the described heat distribution 11 of will modulate according to required pattern is applied on the surface of described base material 10, to melt the surface of described base material 10, described " convexing to form step " comprises that by the base material 10 lip-deep heats that scatter and disappear, (promptly with required pattern) forms projection on the position corresponding to described heat distribution 11.Afterwards, carry out " growth step ", carbon nano-tube on the top surface of described leveling projection.

(fusing step)

At first, as improve one's methods shown in 2, melt step.In described improving one's methods, described base material 10 is made by the iron (Fe) as metallic catalyst.

The material of described base material 10 can be any energy as the material that forms the metallic catalyst that CNT uses, and is identical as second examples of material in the object lesson of the material of described base material 10 and first example.

(convexing to form step)

In the fusing step, when stopping with energy beam 12 irradiation behind the surface melting of described base material 10, the surface temperature of described base material 10 descends gradually, to solidify the surface of described base material 10.At this moment, when the energy of the energy beam 12 that applies in described fusing step size surpassed particular value, as shown in figure 38, the projection of protruding on the surface by described base material 10 134 was formed in the position corresponding to described high-temperature area 11H.

When described high-temperature area 11H corresponding to described groove 13A during along one dimension direction linear array, described protruding 134 form the pattern of the linear rib of arranging along the one dimension direction (lug).Described protruding 134 width (live width) W (being the size of the bottom part of the projection 134 in the modulation direction of described heat distribution 11) is by fusion temperature and cooldown rate decision.Described fusion temperature can be by the energy size of described energy beam 12 (promptly in the quantity of using under the situation of excimer laser to pulsed irradiation) control, and described fusion temperature is high more, and described protruding 134 width W increase is many more.Described cooldown rate can be by following method control, the permanent plant that is about to described base material 10 or described base material 10 is housed places the method for vacuum, the method of gas flow (gas flow), in water or the method for cooling off in the liquid nitrogen, the heating method of cooling simultaneously slowly, described cooldown rate is fast more, and described protruding 64 width W improves many more.In principle, described protruding 134 width W can be the arbitrary value greater than the material atomic size of described base material 10, so by control melting rate and chilling temperature, described protruding 134 width W can be less than 50 nanometers, this is that conventional photoetching process institute is inaccessiable.

The occurrence of described protruding 134 width is by the purposes decision of following base material.For example, when forming CNT, described protruding 134 width W preferably in 0.4 nanometer in scope less than 50 nanometers, 0.4-30 nanometer more preferably, 0.4-10 nanometer more preferably also, its reason is identical with the described reason of first example.

And the interval L between described protruding 134 (be between the projection 134 on the modulation direction of described heat distribution 11 (spacing)) at interval is by space periodic T (being the wavelength X of all period interval P and the described energy beam 12 of the described diffraction grating 13) decision of described heat distribution 11.Described wavelength X is short more, and perhaps described all period interval P are more little, and the interval L between described protruding 134 just descends manyly more, so can form the projection 134 with meticulous interval L, this is that conventional photoetching process institute is inaccessiable.For example, the interval L between described protruding 134 is 100 nanometers or littler preferably, 50 nanometers or littler more preferably, and its reason is identical with the described reason of first example.

(planarization step)

Then, shown in Figure 39 A, in described protruding 134 recessed portion 135, forming packed layer 136.Described packed layer 136 is as the leveling layer, and wherein said protruding 134 top surface carries out leveling by following CMP, and silica forms described packed layer 136 by utilizing SOG or CVD method for example to apply.As the material of described packed layer 136, can use insulating materials (for example silicon nitride, polyimides, PMMA or metal oxide film) or semi-conducting material (as silicon or germanium) to replace above-mentioned silica.

Can form described packed layer 136, described so protruding 134 can be coated with described packed layer 136, and perhaps the part (for example described protruding 134 most advanced parts) of projection 134 is protruded from described packed layer 136.

Then, shown in Figure 39 B, described protruding 134 and packed layer 136 can polish by for example CMP so that the top surface 136A leveling of described protruding 134 top surface 134A and described packed layer 136.Obtain comprising the base material 137 of projection 134 like this, described protruding 134 have the top surface 134A and the packed layer 136 of leveling, and described packed layer 136 has covered described protruding 134 side surface, and described protruding 134 top surface 134A exposes from described packed layer.

The width W a of described leveling top surface 134A can be controlled in the certain limit, and described scope can be obtained by polishing time and CMP by described protruding 134 width W.In other words, described protruding 134 sectional area reduces gradually towards described tip, so described polishing time is long more, the width W a of described top surface 134A just improves manyly more.Interval L between described protruding 134 is identical before and after leveling.

Therefore, when the top surface 134A when described protruding 134 is flat, the width W a of described top surface 134A can be less than 50 nanometers, identical with described protruding 134 width W, this is that conventional photoetching process institute is inaccessiable, the area of described top surface 134A and the variation of shape can reduce, and height can obtain homogenizing.

Finish described catalyst alignment step like this.

(growth step)

After top surface 134A to described protruding 134 carries out leveling, for example as shown in figure 40, CNT 138 is exposed at described top surface 134A by use and is grown on the described base material 137 as the iron of catalyst, thereby forms carbon nanotube structure 139, wherein many CNT 138 linear array.

Therefore, in described improving one's methods, described heat distribution 11 is applied on the surface of described base material 10, after melting the surface of described base material 10, the surface radiating of described base material 10, form protruding 134 pattern with position, then, make described protruding 134 top surface 134A leveling corresponding to described heat distribution 11.Therefore, by control fusion temperature and cooldown rate, the width W a of described protruding 134 width W and described top surface 134A can be less than 50 nanometers, and this is that conventional photoetching process institute is inaccessiable.And by controlling the space periodic T of described heat distribution 11, described protruding 134 can form meticulous interval L, and this is that conventional photoetching process institute is inaccessiable.

And, can form the base material 137 of pattern by dry method with projection 134, so, to compare with using conventional photolithographic method, described improving one's methods can obtain following advantage, and it is easier promptly to produce, and repeatability is better, produces lower.

In addition, described heat distribution 11 applies by making described energy beam 12 diffraction, thus can easily control the space periodic T of described heat distribution by all period interval P that reduce in the described diffraction grating 13, thus can reduce the interval L between described protruding 134.

And, in described improving one's methods, described protruding 134 top surface 134A carries out leveling, so, identical with described protruding 134 width W, the width W a of described top surface 134A can be less than 50 nanometers, and this is that conventional photoetching process institute is inaccessiable, the area of described top surface 134A and change of shape can reduce, but described height homogenizing.

(improving one's methods 10)

Then, following description is of the present invention improves one's methods 10.Described improving one's methods also comprises the top surface transfer step, and this step comprises by using described base material 137 as motherboard, and the raised design of the described base material 137 of gained is transferred on another base material to be transferred in 9 with improving one's methods.

At first, as shown in figure 41, form lobed transfer printing motherboard 140 (motherboard hereinafter referred to as), the top surface of described projection is leveling.As the base material 137 in 9 of improving one's methods, described motherboard 140 is by melting step, convexing to form step and planarization step forms.In other words, described protruding 134 and packed layer 136 be formed on the described base material 10, the top surface 134A of described projection and the top surface 136A of described packed layer 136 are carried out leveling.

(top surface transfer step)

Then, shown in Figure 42 A, prepare and the identical base material to be transferred 71 in 4 of improving one's methods, the conducting film 72 of the top surface 134A of the projection 134 of described motherboard 140 and described base material 71 to be transferred is closely opposed mutually.At this moment, in order to improve described transferring properties, if necessary, preferably on the direction of arrow A, exert pressure.And, preferably carry out heat treated, because can improve described transferring properties once more.

Afterwards, after described motherboard 140 pulled away from described base material to be transferred 71, shown in Figure 42 B, the pattern transfer of described protruding 134 top surface 134A was to base material to be transferred 71.Therefore, the base material 152 with the pattern transferring 151 that is fabricated from iron is formed on the described base material to be transferred 71.Therefore, described protruding 134 top surface 134A is transferred on many base materials to be transferred 71, makes many base materials 152 by using a motherboard 140.And, by planarization step, can reduce area and the change of shape of described protruding 134 top surface 134A, and described height is homogenizing, so, the area and the change of shape of described pattern transferring 141 reduced.Formed meticulous pattern transferring 151 like this with high precision.And, when described protruding 134 owing to when repeating transfer printing and damaging,, just can recover the shape of described protruding 134 top surface as long as in planarization step, repeat polishing.

Finished described catalyst alignment step like this.

(growth step)

Described pattern transferring 151 is formed on the described base material to be transferred 71, after forming described base material 152, for example as shown in figure 43, CNT 153 is grown on the described base material 152 as catalyst by using pattern transferring 151, thereby form carbon nanotube structure 154, wherein many CNT 153 linear array.The described carbon nanotube structure 154 that is formed on the conducting film 72 can be used as the field-causing electron ballistic device.

Therefore, in described example, described protruding 134 top surface 134A is transferred on the base material to be transferred 71, so, by using a motherboard 140 described protruding 134 top surface 134A is transferred on many base materials to be transferred 71, make many base materials 152.And by planarization step, area and the change of shape of described protruding 134 top surface 134A are little, and described height is a homogenizing, so can form the pattern transferring 151 with high precision.

(improving one's methods 11)

Then, following description improves one's methods 10.In described improving one's methods, as improve one's methods shown in 9, raised design stops the key-course of described carbon nano tube growth to be formed on the surface of described projection except most advanced part after being formed on the surface of described base material 10.In other words, in described improving one's methods, described catalyst alignment step comprises " fusing step ", " convex to form step " and " key-course formation step ", described fusing step comprises that the described heat distribution 11 of will modulate according to required pattern is applied on the surface of described base material 10, to melt the surface of described base material 10, the described step that convexes to form comprises by making the surface radiating of described base material 10, (promptly with required pattern) forms projection in the position corresponding to described heat distribution 11, and described key-course forms step and is included on the convex surfaces except described most advanced part and forms the key-course that stops described carbon nano tube growth.Afterwards, make " growth step " of described carbon nano tube growth on the most advanced part of described projection, described projection described key-course of no use covers.

(melt step and convex to form step)

At first, as improve one's methods shown in 9, carry out described fusing step and convex to form step, as shown in figure 38, be formed on the surface of described base material 10 described protruding 134.

(key-course formation step)

Then, as shown in figure 44, described key-course 161 is formed on the surface of the projection 134 except that most advanced part 134B.In following growth step, described key-course 161 stops described CNT by growing on described protruding 134 the side surface, to limit the growth district of described CNT, applies silica by for example method such as SOG, CVD and forms described key-course 161.Material as described key-course 161, it can be identical with the packed layer 136 of improving one's methods in 9, can use insulating materials (for example silicon nitride, polyimides, PMMA) or insulating materials (as metal oxide film) or semi-conducting material (as silicon or germanium) to replace silica.In principle, when insulating materials is used as the material of described key-course 161, use the key-course of making by insulating materials 161 to fill around the zone of described protruding 134 most advanced part 134B, so, compare the situation that does not have insulator around described CNT, can on described CNT, concentrate higher electric field.

Finish described catalyst alignment step like this, form base material 162, wherein said key-course 161 is formed on the surface of the projection 134 except most advanced part 134B.

(growth step)

Form after the described base material 162, for example as shown in figure 45, therefore CNT 163 forms carbon nanotube structure 164, wherein many CNT 163 linear array by using as the iron growth of catalyst exposure in described protruding 134 most advanced part 134B.

Therefore, in described improving one's methods, described key-course 161 is formed on described protruding 134 the surfaces except most advanced part 134B, so described CNT 163 only is grown on described protruding 134 the most advanced part 134B.

" making the method for field-causing electron ballistic device and the method for manufacturing display unit "

(the 5th example)

Then, with reference to Figure 46-49, the method for the method of the manufacturing field-causing electron ballistic device of the 5th example of following description the present invention and manufacturing display unit.In the method for this example, formation comprises the field-causing electron ballistic device of the negative electrode that uses CNT, described method comprises that by the fusing distribution CNT is had " the catalyst formation step " of catalyst function and passes through " the negative electrode formation step " that the described CNT of growth forms negative electrode, and described fusing reaches by the modulation heat distribution.By on described substrate surface, forming " the separation trough formation step " of separation trough, arrange in described catalyst alignment step to avoid described metal, thereby gained field-causing electron ballistic device can be used as for example minus plate of FED.

Described catalyst alignment step is identical with the catalyst alignment step described in first example, described catalyst alignment step comprises " fusing step " and " deposition step ", described fusing step comprises that the heat distribution 11 of will modulate according to required pattern is applied on the surface of described base material 10, to melt the surface of described base material 10, described deposition step comprises by making the surface radiating of described base material 10, and described second material is deposited in the position (promptly with required pattern) corresponding to described heat distribution 11.And it is identical with growth step in the method for the manufacturing tubular carbon molecule of first example basically that described negative electrode forms step.Therefore, use the numeral components identical identical with first example.And the part overlapping with the manufacturing step in first example can be described with reference to Fig. 1-3.

(catalyst alignment step)

At first, in the fusing step,, will modulate heat distribution 11 and be applied on the described base material 10 by step shown in Figure 1.Then, in deposition step, described second material is deposited in the position corresponding to the high-temperature area 11H of heat distribution 11, is essentially the deposition region 14 of flat shape with formation by step shown in Figure 2.Finish described catalyst alignment step like this, and form the base material 15 that has deposition region 14 on the described base material 10.

(negative electrode formation step)

Then, by step shown in Figure 3, utilize the CVD method that many CNTs 16 are grown on the described base material 15.Therefore, as shown in figure 46, form negative electrode 170, wherein said CNT 16 is arranged according to the pattern linearity of described deposition region 14.The diameter of described CNT 16 is by kind and growing environment decision as the carbon compound of raw material.It is few more to be included in CNT 16 quantity in the negative electrode 170, just preferred more, because this easier concentrated electric field.

(separation trough formation step)

Then, with reference to Figure 47 and 48, following description separation trough forms step.Form in the step at separation trough, separation trough is formed on the surface of described base material 15, so that described negative electrode 170 is separated mutually.

At first, as shown in figure 47, make described energy beam 12 diffraction form described heat distribution 11 by diffraction grating 13, it has 180 ° phase shift in the fusing step, and described heat distribution 11 is applied on the surface of described base material 15.In other words, half of interval (spacing) between CNT 16 arrays moved in the position of relative position between described base material 15 and the diffraction grating 13 from described fusing step, and the high-temperature area 11H of described like this heat distribution 11 is formed on the centre position between described CNT 16 arrays.

The energy size of described energy beam 12 is set, with surface at described high-temperature area 11H cutting (fusing) described base material 15.Therefore, as shown in figure 48, parallel separation trough 180 is formed on the centre position between described CNT 16 arrays, to avoid the position that (avoid) CNT 16 forms.At this moment, the position that CNT 16 forms is corresponding to described low-temperature region 11L, so the energy size of described energy beam 12 is low, the temperature of described CNT 16 is limited to for example 400 ℃ or lower.Therefore, the adverse effect that is not produced by heat distribution 11 is applied on the described CNT 16.

Described supporter 10A is preferably by insulating materials (silica (SiO for example ₂), aluminium oxide (Al ₂O ₃), plastics or glass makes, when forming separation trough 180, described base material 10 cuts fully, because described negative electrode 170 can be by separation trough 180 electric separating each other.And, be preferably formed described separation trough 180, being engaged among the described supporter 10A, because described negative electrode 170 electric separating more accurately each other.

Therefore, can obtain comprising described base material 15 the field-causing electron ballistic device, comprise many negative electrodes 170 of CNT 16 and be formed on the described base material 15 so that the separation troughs 180 that described negative electrode 170 is separated mutually, described CNT 16 with required arranged in patterns on described base material 15.Each negative electrode 170 comprises a linearly aligned row CNT 16.

(FED)

Figure 49 has described the schematic diagram of the FED that uses described field-causing electron ballistic device.In described FED, minus plate 200 and positive plate 300 are combined into an opposed unit mutually, and the inside of described FED is in high vacuum state.

Described minus plate 200 comprises the base material 15 that above-mentioned negative electrode 170 forms in the above.As described minus plate 200, can use the combination of many base materials 15 according to the size of the size of required screen and base material 15.Described negative electrode 170 is connected to data driver 220 by negative electrode, negative electrode that is used for green (G) 210G that is used for redness (R) 210R and the negative electrode that is used for blueness (B) 210B.As

negative electrode

210R, 210G and 210B, can use base material 10, other distribution of perhaps can arranging by separation trough 180 cuttings.

In described positive plate 300, being used for the positive electrode of R 320R, the positive electrode that is used for the positive electrode of G 320G and is used for B 320B is that benchmark is arranged alternately in the transparent base of being made by glass material etc. 310 with the pixel pixel of ining succession.Described

positive electrode

320R, 320G and 320B respectively with described

negative electrode

210R, 210G and 210B orthogonal arrangement.And scanner driver 340 connects on described

positive electrode

320R, 320G and the 320B.Be used for the surface that the fluorescent film of R 330R, the fluorescent film that is used for the fluorescent film of G 330G and is used for B 330B are respectively formed at more approaching described transparent base one side of described

anode

320R, 320G and 320B.

In FED, for example when selectivity applies voltage between described

positive electrode

320R, 320G and 320B and described

negative electrode

210R, 210G and 210B, field-causing electron occurs in the described negative electrode 170 that is arranged on the crosspoint, to launch electronics e towards described

positive electrode

320R, 320G and 320B ^-The described electronics e that sends by described negative electrode 170 ^-Pass the pore (not showing) that is distributed among each

positive electrode

320R, 320G and the 320B,, thereby make fluorescent material luminous with described

fluorescent film

330R, 330G and 330B collision.The light that is sent by described fluorescent material shows required image.In this case, the CNT 16 of described negative electrode 170 is formed in the deposition region 14 that is fabricated from iron, and described iron is with fine width W and meticulous interval L deposition, and this is that conventional photoetching process institute is inaccessiable, so display of high resolution images clearly.

Therefore, in this example, form the pattern of the described deposition region 14 that is fabricated from iron by fusing, described iron has the catalyst function that is used to form CNT 16, described fusing is reached by modulation heat distribution 11, described negative electrode 170 forms by the pattern of the described deposition region 14 described CNT 16 of growing, so can by control described heat distribution 11 form conventional photoetching process the pattern of the deposition region 14 with fine width W and meticulous interval L that can not obtain, thereby obtain described negative electrode 170, wherein said CNT 16 is regularly arranged according to the pattern of described deposition region 14.Therefore, comprise that by use the field-causing electron ballistic device of described negative electrode 170 obtains the fine pitch FED of the higher pattern of the clear display resolution of energy.

And, can form the base material 15 of pattern by dry method with deposition region 14, use conventional photolithographic method so compare, this example can obtain following advantage, and it is easier promptly to produce, and repeatability is better, and cost can reduce.

In addition, in described example, described heat distribution 11 is applied to the surface of the base material of being made by silicon (comprising the iron as additive) 10, behind the surface of melting described base material 10, the surface radiating of described base material 10, so iron can optionally be deposited on the position corresponding to heat distribution 11, forms the pattern of being made by the deposition region 14 that is essentially flat shape.

In addition, in this example, make described energy beam 12 diffraction, applying described heat distribution 11, so, during all period interval P in reducing described diffraction grating 13, the space periodic T of described heat distribution 11 can control easily, and the interval L between the described deposition region 14 can reduce, and obtains high precision.

In addition, in this example, described separation trough 180 is formed on the surface of described base material 15, to avoid (avoid) described CNT 16, so described negative electrode 170 is separated mutually by separation trough 180, when described negative electrode 170 is used as the minus plate 200 of described FED, described data driver 220 is connected on each negative electrode 170, thereby optionally applies voltage.

And, described heat distribution 11 can apply by making described energy beam 12 diffraction, to form described separation trough 180, so described separation trough can be formed on the centre position between described CNT 16 arrays, described CNT 16 can have the meticulous interval of high precision.And, compare the situation of using the conventional laser fusing, can in the shorter time, form many separation troughs 180, and the adverse effect that is not caused by heat is applied on the described CNT 16.

(improving one's methods 12)

Then, with reference to Figure 50, the 5th example of following description improve one's methods 12.In described improving one's methods, every multiple row CNT 16 (for example per two row) forms separation trough 180, and each multiple row negative electrode 170 comprises two row CNTs 16.Similarly, although do not show, per three row or four row CNTs 16 can form a separation trough 180.

When the space periodic of the lip-deep heat distribution 410 that is applied to described base material 15 is the integral multiple (nT of the space periodic T of heat distribution 11 in for example described fusing step; N is a positive integer, and n 〉=2) time, every multiple row can form described separation trough 180.For example be set at the integral multiple (nP of all period interval P of diffraction grating in the fusing step by all period interval that separation trough formed diffraction grating used in the step 430; N is a positive integer, and n 〉=2), can control described space periodic.And, control described space periodic by wavelength X or the incidence angle of controlling described energy beam 12.

Control the relative position between described base material 15 and the diffraction grating 430, the same with described first example like this, the centre position between described CNT 16 row forms the high-temperature area 410H of heat distribution 410.

In described improving one's methods, every multiple row CNT 16 forms described separation trough 180.

(improving one's methods 13)

Then, with reference to Figure 51-53, following description is of the present invention improves one's methods 13.In described improving one's methods, form the pattern of described deposition region 14 after, before forming described negative electrode 170, carry out separation trough and form step by the described CNT 16 of growing.

(fusing step and deposition step)

At first, as described in the 5th example, melt step and deposition step, form the base material 15 of pattern with deposition region 14 by the step shown in Fig. 1 and 2.

(separation trough formation step)

Then, with reference to Figure 51 and 52, following description separation trough forms step.At first, shown in Figure 51, described heat distribution 11 is applied on the surface of described base material 15, described heat distribution forms described energy beam 12 diffraction by diffraction grating 13, and it has 180 ° phase shift in the fusing step.In other words, the relative position of described base material 15 and diffraction grating 13 is by half of the interval (spacing) between the described deposition region 14 of position transfer of fusing in the step, and the high-temperature area 11H of described like this heat distribution 11 is formed on the centre position of described deposition region 14.

The energy size of described energy beam 12 is set, and cut in described high-temperature area 11H on the surface of described like this base material 15.Therefore, shown in Figure 52, intermediate point forms parallel separation trough 180 between 14 patterns of described deposition region, to avoid the pattern of described deposition region 14.

(negative electrode formation step)

Then, the same with the 5th example shown in Figure 53, described CNT 16 is grown in the deposition region 14 by step shown in Figure 3, to form described negative electrode 170.

In described improving one's methods, behind the formation separation trough 180, form described negative electrode 170 by the described CNT 16 of growing, thus the sure adverse effect that prevents that heat distribution 11 from producing, thus described CNT 16 can not influenced.

(improving one's methods 14)

Figure 54 has described the separation trough that the present invention improves one's methods in 14 and has formed step.In described improving one's methods, by improving one's methods 13, and to improve one's methods 14 identically, every a plurality of deposition regions 14 (for example per two deposition regions) form described separation trough 180.

(improving one's methods 15)

Figure 55-57 has described the another kind of the 5th example and has improved one's methods.In described improving one's methods, in the fusing step of the 5th example, as improve one's methods shown in 1, along the energy of the described energy beam of two-dimensional directional (being directions X and Y direction) adjustment, so that directions X heat distribution 81X and Y direction heat distribution 81Y are applied on the surface of described base material 10.In described improving one's methods, identical numeral components identical.And the part overlapping with the fabrication portion in 1 of improving one's methods of the 5th example is described with reference to Figure 47 and 48.

(catalyst alignment step)

At first, as improve one's methods as described in 1, melt step, so that described heat distribution 33 is applied on the surface of described base material 10 according to the step shown in Fig. 7-9.Then, as improve one's methods shown in 1, carry out deposition step as Figure 10,11 and 13 described steps, described second material is deposited in the position corresponding to described heat distribution 33, promptly corresponding to the position of described high-temperature area 33H, thereby form described deposition region 34.Therefore, can obtain having the base material 35 of the pattern of deposition region 34.

(negative electrode formation step)

Then, as improve one's methods as described in 1, shown in Figure 55, for example utilize the CVD method described CNT 36 of on described base material 35, growing, form described negative electrode 70 according to step shown in Figure 12.36 of described CNTs are grown on the described deposition region 34, so formed described negative electrode 170, wherein CNT 36 is arranged on two-dimensional directional.The quantity that is included in a CNT 36 in the negative electrode 170 is few more, just more preferably, because can easily concentrate electric field.

(separation trough formation step)

Then, as described in the 5th example, carry out separation trough according to the step shown in Figure 47 and 48 and form step.Therefore, shown in Figure 56, form parallel separation trough 180 in the centre position, to avoid being arranged in the CNT 36 of two-dimensional directional.

Therefore, obtain comprising the field-causing electron ballistic device of many negative electrodes 170, each negative electrode 170 comprises a row CNT 36 of arranging at certain intervals and the separation trough 180 of separating described negative electrode 170.

(FED)

Figure 57 is to use the schematic diagram of the FED of this field-causing electron ballistic device.In described FED, described minus plate 200 and positive plate 300 are combined into an opposed unit mutually, and the inside of described FED is in high vacuum state.Described minus plate 300 comprises base material 35, forms above-mentioned negative electrode 170 on described base material 35.The structure of described positive plate 300 is identical with the 5th example.

In described FED, for example when between described

positive electrode

320R, 320G and 320B and

negative electrode

210R, 210G and 210B, optionally applying voltage, field-causing electron occurs in the negative electrode 170 on the crosspoint, make the fluorescent material of described

fluorescent film

330R, 330G and 330B luminous like this, show required image.In this case, the CNT 36 of described negative electrode 170 is with certain interval two-dimensional arrangements, thus improved each CNT 36 lip-deep electric-field intensity, to improve electron emission capability.

Therefore, in described improving one's methods, as improve one's methods as described in 1, can adjust the energy size of described energy beam 12, form heat distribution 33, can be formed on the surface of described base material 10 so be arranged in the pattern of the deposition region 34 of two-dimensional directional along two-dimensional directional.

And, as improve one's methods as described in 1, make described energy beam 12 diffraction by described diffraction grating 32, form heat distribution 33, so the space periodic TX of heat distribution 33 and TY can easily control by all period interval PX and the PY that reduces in the described diffraction grating 32, thereby can reduce interval LX and LY between the described deposition region 34.

(improving one's methods 16)

Figure 58 has described with mesh shape and has formed the separation trough 180 that forms in the step at 15 the separation trough of improving one's methods.In this case, in described separation trough 180, the interval on interval on the directions X and the Y direction can be set respectively.

When described separation trough formed with this mesh shape, in being used as the negative electrode of FED minus plate, distribution can be placed by for example formation hole, back from described base material 35.

And except improving one's methods shown in Figure 58,15 the separation trough of improving one's methods forms step can carry out various changes.For example, after deposition region 34 forms, can before forming described negative electrode 170, carry out separation trough and form step by carbon nano-tube 36.And every multiple row CNT (for example per two row) can form described separation trough 180.

(the 6th example)

Then, with reference to Figure 59 A 1, the method for the method of the manufacturing field-causing electron ballistic device of the 6th example of following description the present invention and manufacturing display unit.In described example, in the catalyst alignment step, as improve one's methods as described in 2, the surface radiating of described base material 10, on the surface of described base material 10, to form projection, described second material is deposited on the tip portion of described projection, comprises the base material of raised design with formation, wherein its tip portion is made by described second material at least.And, in described example, forming in the step at negative electrode, described base material and described electrode are opposed mutually, apply electric field between them, with vertical carbon nano-tube under low-voltage.Except them, the manufacture method of this example is identical with the 5th example, thus with the 5th the numeral components identical that example is identical.And the part overlapping with the fabrication portion in 2 of improving one's methods can be described with reference to Fig. 1 and 14-17, and the part overlapping with the manufacturing step in the 5th example can be described with reference to Figure 47 and 48.

(catalyst alignment step)

At first, as improve one's methods as described in 2, melt step according to step shown in Figure 1 after, carry out deposition step according to the step shown in Figure 14-16, thereby form the base material 43 of the pattern that comprises projection 41, in described protruding 41, the deposition region 42 that is fabricated from iron is formed on its tip portion at least.

(negative electrode formation step)

Then, with reference to Figure 59 A-60, following description negative electrode forms step.As improve one's methods shown in 2, by step shown in Figure 17, described CNT 44 for example utilizes that CVD method, PECVD method etc. are grown on the described base material 43, to form negative electrode 170 (with reference to Figure 60).At this moment, shown in Figure 59 A, base material 43 and the electrode of being made by for example carbon (C) 510 are opposed mutually, and apply voltage between them.Shown in Figure 59 B, when convexing to form on base material 43, on described protruding 41 position, improve electric field when described, but described CNT 44 vertical-growths.Therefore, the direction of growth of described CNT 44 can be controlled on the unified direction under low-voltage.In the negative electrode 170 that obtains in by above-mentioned steps, the orientation of described CNT 44 is high, so, when described negative electrode 170 is used as the negative electrode of described FED, can improve described electron emission capability.In described carbon nanotubes grown 44, comprise second material 46 that is deposited in the described deposition region 42, i.e. iron in this example.

When 44 growths of described CNT, when applying electric field simultaneously, preferred first material of forming base material 10 (for example high conductive material, as silicon) that uses adds for example phosphorus (P) in described silicon.

(separation trough formation step)

Then, as described in the 5th example, carry out separation trough by the step shown in Figure 47 and 48 and form step.Therefore, shown in Figure 61, described separation trough 180 is formed on the centre position between the described CNT 44 of several row, to avoid the described CNT 44 of several row.

Therefore, can obtain comprising many negative electrodes 170 and make described negative electrode 170 separation trough 180 of separation mutually that each negative electrode comprises an alignment carbon nanotubes arranged 44.

(FED)

Figure 62 has described the schematic diagram of the FED that uses this field-causing electron ballistic device.In described FED, described minus plate 200 and positive plate 300 combine as a mutual opposed unit, and the inside of described FED is in high vacuum state.Described minus plate 200 comprises the base material 43 that forms above-mentioned negative electrode 170 in the above.The structure of described positive plate 300 is described identical with first example.

In described FED, for example when selectivity applies voltage between described

positive electrode

320R, 320G and 320B and described

negative electrode

210R, 210G and 210B, field-causing electron occurs in the negative electrode 170 that is arranged on the crosspoint, fluorescent material among described

fluorescent film

330R, 330G and the 330B is luminous, to show required image.In this case, the direction of growth of the CNT 44 of described negative electrode 170 is arranged verticals, and the orientation of described CNT 44 is high, so the quantity of described emission electronics is average, thereby can improve described electron emission capability.And, can prevent Strength Changes.

Therefore, in this example, described protruding 41 (wherein its tip portion is made by described second material (iron) at least) are formed on the precalculated position of described base material 10, so, compare the situation that described pattern forms flat shape, can reduce the width of described deposition region 42, and compare the 5th example, can form meticulousr pattern.

And in this example, described base material 43 and electrode 510 are opposed mutually, and apply voltage between them, so the direction of growth of CNT 44 can control on the unified direction under low-voltage.Therefore, can improve the orientation of the CNT 44 of described negative electrode 170, when described negative electrode 170 can be used as the negative electrode of FED, can improve described electron emission capability, and prevent that intensity from changing

(improving one's methods 17)

Figure 63 A and 63B have described negative electrode in described the 6th example and have formed improving one's methods of step.In described improving one's methods, shown in Figure 63 A, two base materials 63 are opposed mutually, and the pattern of the projection 41 of described like this two base materials 43 is opposed mutually, and applies electric field between two base materials 43.In described improving one's methods, on described protruding 41 position, improve electric field, and shown in Figure 63 B, described CNT 44 can be by the tip portion vertical-growth of the projection 41 of described two base materials 43.Therefore, except the effect in the 6th example, described CNT 44 can vertically be formed on described two base materials 43, so the production efficiency of can further improve simultaneously.

(improving one's methods 18)

Then, with reference to Figure 64-65B, another of the negative electrode formation step in the 6th example of following description improved one's methods.In described improving one's methods, can use the electrode of raised design as electrode corresponding to the pattern of the projection 41 of described base material 43, distribute described base material 43 and electrode, the pattern of the projection 41 of described like this base material 43 and the raised design of described electrode just can be opposed mutually.

At first, shown in Figure 64, as described in fusing step and deposition step in the 6th example, described protruding 511 pattern be formed on the 6th the described identical electrode 510 of example on, to form projected electrode 512.Described protruding 511 shape, width W and L is identical with protruding 41 situation at interval, different is not have the deposition region to be formed on described protruding 511 tip portion.

Then, shown in Figure 65 A, the pattern of the pattern of the projection 41 of described base material 43 and the projection 511 of projected electrode 512 is opposed mutually, and applies electric field between described base material 43 and projected electrode 512.Therefore, improve electric field in described protruding 41 and 511 position, and shown in Figure 65 B, described CNT 44 can be by the tip portion vertical-growth of the projection 41 of described base material 43.

(improving one's methods 19)

Figure 66 A and 66B described also that negative electrode in the 6th example forms step another improve one's methods.In described improving one's methods, shown in Figure 66 A, described base material 15 (having formed the pattern of the plane deposition region 14 in the 5th example in the above) and described projected electrode 512 (having formed the pattern of the projection 511 described in 18 of improving one's methods in the above) are opposed mutually, and apply electric field between them.Therefore, in described protruding 511 position, improve electric field, and shown in Figure 66 B, described CNT 16 can be from vertical-growth on the position of described deposition region 14.In carbon nanotubes grown 16, comprise second material that is deposited on the described deposition region 14, i.e. iron in this example.

(improving one's methods 20)

Figure 67 A and 67B have described improving one's methods of catalyst alignment step in the 5th example.In described improving one's methods, described catalyst alignment step comprises " projected electrode formation step " and " reduction/deposition step ", described projected electrode forms step and comprises by using the heat distribution corresponding to required pattern modulation to form raised design on the surface of plane-shaped electrode, described reduction/deposition step is included in and comprises in the catalyst solution with catalyst function, between described projected electrode and conductive base, apply electric field, thereby on conductive base, form pattern, with reduction with deposit described metal corresponding to projected electrode (making) by metal with catalyst function.

(projected electrode formation step)

As the Figure 64 in 18 of improving one's methods shown in, described protruding 511 pattern is formed on the surface of the electrode 510 with flat surfaces, to form projected electrode 511.The method that forms projection 511 with improve one's methods 18 identical.

(reduction/deposition step)

Then, shown in Figure 67 A, in the catalyst solution 520 that comprises the metal (for example iron) that the formation CNT is had catalyst function, described projected electrode 512 and conductive base 530 can be opposed mutually, and apply electric field between them.As metal, can use the material of describing as second material in first example except iron with catalyst function.Therefore, on described protruding 511 position, improve electric field, and shown in Figure 67 B, by reduction according to described protruding 511 pattern with deposition of iron on described conductive base 530, thereby form deposition region 531.Therefore, can obtain having the base material 530 of the pattern of deposition region 531, thereby finish described catalyst alignment step.

In described improving one's methods, described protruding 511 pattern is formed on the surface of described plane-shaped electrode 510 by heat distribution, on described conductive base 530, to form the deposition region 531 of making by catalyst metals (iron) corresponding to described protruding 511 pattern, so can form described deposition region 531 corresponding to described protruding 511 pattern, it has meticulous width and meticulous interval, and this is that conventional photoetching process institute is inaccessiable.

(the 7th example)

Then, with reference to Figure 68 A-70, make the method for field-causing electron ballistic device and the method for manufacturing display unit in the 7th example of following description.In described example, also can comprise the extraction electrode formation step that forms extraction electrode corresponding to negative electrode.In other words, in described example, carry out in 13 forming extraction electrode after separation trough forms step improving one's methods, carbon nano-tube then is to form negative electrode.

(fusing step and deposition step)

At first, shown in Figure 68 A, shown in the 5th example, carry out described fusing step and deposition step, and form the base material 15 of the pattern that comprises described deposition region 14.As above-mentioned, described deposition region 14 is substantially shaped as flat shape; But for the purpose of understanding easily, in Figure 68 A and 68B, protrude from the surface of described base material 15 described deposition region 14.

(separation trough formation step)

Then, shown in Figure 68 B, the centre position between the pattern of described deposition region 14 forms separation trough 180, to avoid the pattern of described deposition region 14.The method that forms described separation trough 180 with improve one's methods in 13 with reference to Figure 51 and 52 described identical.

(extraction electrode formation step)

After forming described separation trough 180, carry out extraction electrode and form step.At first, shown in Figure 69 A, by for example silica (SiO ₂) wait the dielectric film of making 611 to be formed on the described base material by for example spin coating or chemical vapour deposition (CVD).

Then, shown in Figure 69 B, the conducting film of being made by for example niobium (Nb), molybdenum (Mo) etc. 612 is formed on the described dielectric film 611 by for example spin coating or chemical vapour deposition (CVD).

After forming conducting film 612, shown in Figure 69 C,, in insulating barrier 611 and conducting film 612, form aperture part 613 corresponding to each deposition region 14 by for example photoetching process or reactive ion etching.Therefore, on described base material 15, form the extraction electrode of making by niobium or molybdenum 614, described dielectric film 611 is arranged between described base material 15 and the described extraction electrode.

(negative electrode formation step)

Then, the same with the 5th example shown in Figure 70, described CNT 16 is grown in the described deposition region 14, to form negative electrode 170.Therefore, can obtain comprising field-causing electron ballistic device corresponding to the extraction electrode 614 of described negative electrode 170.

(FED)

Figure 71 has described the schematic diagram of the FED that uses this field-causing electron ballistic device.In described FED, described minus plate 200 and positive plate 300 combine as a mutual opposed unit, and the inside of described FED is in high vacuum state.

Described minus plate 200 comprises above-mentioned negative electrode 170 and forms base material 15 corresponding to the extraction electrode 614 of described negative electrode 170 in the above.Described extraction electrode 614 comprises the extraction electrode that is used for R 614R that corresponds respectively to

negative electrode

210R, 210G and 210B, be used for the extraction electrode of G 614G and be used for the extraction electrode of B 614B.Be used for the extraction electrode of R 614R, the extraction electrode that is used for the extraction electrode of G 614G and is used for B 614B is connected to scanner driver (not showing).

The structure of described positive plate 300 is identical with described first example, and different is that the dc voltage of being scheduled to fixedly is applied on described

positive electrode

320R, 320G and the 320B.In Figure 71, positive electrode 320R and fluorescent film 330R have only been described.

extraction electrode

614R, 614G and 614B and described

negative electrode

210R, 210G and 210B, field-causing electron occurs in the negative electrode 170 on the crosspoint, the fluorescent material (with reference to Fig. 6) of described

fluorescent film

330R, 330G and 330B is luminous, to show required pattern.In this case, described extraction electrode forms corresponding to described negative electrode 170, so field-causing electron occurs under the low-voltage.

Therefore, in this example, form extraction electrode 614 corresponding to described negative electrode 170, so described field-causing electron occurs under the low-voltage.

(improving one's methods 21)

Then, with reference to Figure 72 A-74, the improving one's methods of the 7th example of following description.In described improving one's methods, in the 7th example, as improve one's methods as described in 11, after forming raised design on the surface of described base material 10 (making) by iron (Fe) as metallic catalyst, on the convex surfaces outside the most advanced part, form the key-course that can stop described carbon nano tube growth, and identical numeral components identical.The part overlapping with the manufacture method in the 5th example can be described with reference to Figure 47 and 48, and the part overlapping with the manufacture method in the 7th example can be described with reference to Figure 69 A-69C.

In other words, in described improving one's methods, described catalyst alignment step comprises " fusing step ", " convex to form step " and " key-course formation step ", described fusing step comprises that the described heat distribution 11 of will modulate according to required pattern is applied on the surface of described base material 10, to melt the surface of described base material 10, the described step that convexes to form comprises by making the surface radiating of described base material 10, form projection going up corresponding to the position (promptly with required pattern) of heat distribution 11, described key-course forms step and is included on the convex surfaces except most advanced part and forms the key-course that can stop described carbon nano tube growth.If necessary, can form " the separation trough formation step " of separation trough.Afterwards, carry out " negative electrode formation step ", promptly form negative electrode by the described CNT of growing in the most advanced part of the projection that does not have the Coverage Control layer.

(melt step and convex to form step)

At first, as improve one's methods shown in 11, melt step and convex to form step, and shown in Figure 72 A, described protruding 134 pattern is formed on the surface of described base material 10.

(separation trough formation step)

Afterwards, as described in the 5th example, shown in Figure 72 B, form separation trough 180 by the step shown in Figure 47 and 48.

(key-course formation step)

Then, as improve one's methods as described in 11, shown in Figure 72 C, key-course 161 is formed on the surface of the projection 134 except most advanced part 134B by step shown in Figure 44.

Finish the catalyst alignment step like this, and form base material 700, wherein said key-course 161 is formed on the surface of the projection 134 except most advanced part.

(extraction electrode formation step)

After forming described base material 700, shown in the 7th example, carry out extraction electrode by the step shown in Figure 69 A-69C and form step.In other words, at first, shown in Figure 73 A, on described base material 700, form the dielectric film of making by for example silica etc. 611 by for example sputter or chemical vapour deposition (CVD).

Then, shown in Figure 73 B, on described dielectric film 611, form the conducting film of making by for example niobium (Nb), molybdenum etc. 612 by for example sputter or chemical vapour deposition (CVD).

After forming conducting film 612, shown in Figure 73 C,, in described dielectric film 611 and conducting film 612, form aperture part 612 corresponding to the most advanced part 134B of each projection 134 by for example photoetching process and reactive ion etching.Therefore, the described extraction electrode of being made by niobium or molybdenum 614 is formed on the described base material 700, between described extraction electrode 614 and base material 700 dielectric film 611 is arranged.

(negative electrode formation step)

Then, shown in Figure 74, as improve one's methods as described in 11, described CNT 163 forms described negative electrode 710 from the most advanced part 134B growth of each projection 134.Therefore, can obtain comprising field-causing electron ballistic device corresponding to the extraction electrode 614 of described negative electrode 710.

Therefore, in described improving one's methods, except the effect of the 7th example, described key-course 161 is formed on the surface of the projection 134 except most advanced part 134B, so CNT 163 can only be grown on described protruding 134 the most advanced part 134B.

Particularly, when insulating materials is used as the material of described key-course 161, use the key-course of making by insulating materials 161 to fill around the zone of described protruding 134 most advanced part 134B, so compare the situation that described CNT 163 does not have insulating materials on every side, can on described CNT 163, concentrate higher field intensity.

Although described the present invention with reference to described example with improving one's methods, the present invention is not confined to these examples and improves one's methods, and can carry out many improvement.For example, in above-mentioned example, the big I of the energy of energy beam 12 is regulated by the quantity of pulsed irradiation; But, can regulate quantity, irradiation intensity and the pulse width of described pulsed irradiation.

And, in above-mentioned example and above-mentioned improving one's methods,

form heat distribution

11 and 41 by using

diffraction grating

13,32 and 43; But, can form

heat distribution

11 and 41 by using beam splitter and mirror.

In addition, at above-mentioned example with in improving one's methods, can apply described energy beam 12 by XeCl quasi-molecule laser; But, also can use any laser instrument except described XeCl, form described heat distribution as long as can modulate, can use typical general electrothermal furnace (diffusion furnace) or lamp to heat as any other method of heater.

In addition, at above-mentioned example with improve one's methods, described deposition step or convex to form to cool off naturally in room temperature after heat leakage in the step is finished by the fusion step and carry out; But, can under less than the temperature of room temperature, shorten described deposition step or convex to form step by forcing to cool off.

In addition, for example form in the step at 15 the negative electrode of improving one's methods, as described in the 6th example, described base material 35 and electrode (not showing) are opposed mutually, and can apply voltage between them.

In addition, for example as the combination of second example and the 6th example, when when between base material and electrode, applying electric field with the height homogenizing of carbon nanotubes grown in vertical direction, the shape of described CNT and the direction of growth can be unified, when described CNT was used among the FED, described electric field transmitted performance can improve once more.

And for example as described in second example, after the height homogenizing of described CNT 16, as described in the 7th example, the extraction electrode of being made by niobium or molybdenum can be formed on the fixed bed 18.In this case, described fixed bed 18 is preferably made by insulating materials.

In addition, for example in the method for the method of making the field-causing electron ballistic device and manufacturing display unit, the situation that the catalyst alignment step is carried out as described in 1 as improving one's methods can be referring to improving one's methods 15, the situation that the catalyst alignment step is carried out as described in 2 as improving one's methods can be referring to as described in the 6th example, and the catalyst alignment step can be referring to improving one's methods 21 as the 11 described situations of improving one's methods.But, the method that the improving one's methods of the alignment step of catalyst described in the 3-10 of improving one's methods may be used on making the method for field-causing electron ballistic device and make display unit.

The method of metal with catalyst function of distributing on base material is not confined to above-mentioned example and improves one's methods.For example, projection can be formed on the base material of being made by catalyst metals, and the top surface of described projection can carry out leveling.

In addition, at above-mentioned example with improve one's methods, the situation that CNT forms tubular carbon molecule as described; But the present invention is not confined to this situation, and it may be used on forming the situation of carbon nanometer feeler (nanohorn) or carbon nano-fiber.

As above-mentioned, in the method for making tubular carbon molecule of the present invention, can distribute to forming the metal that tubular carbon molecule has catalyst function by fusing, with the growth tubular carbon molecule, described fusing reaches by the modulation heat distribution, so can form the pattern with fine width and meticulous interval by controlling described heat distribution, this is that conventional photoetching process institute is inaccessiable, and can obtain tubular carbon molecule, wherein said tubular carbon molecule can be regularly arranged corresponding to described pattern.

In the method for making recording equipment of the present invention, can distribute to forming the metal that tubular carbon molecule has catalyst function by fusing, with the growth tubular carbon molecule, described fusing reaches by the modulation heat distribution, the tip of described tubular carbon molecule is formed in the predetermined plane, described tip forms open pointed tip, from described open pointed tip magnetic material is inserted the tip portion of described tubular carbon molecule then, forms magnetosphere.Therefore, magnetization length can be undersized, and this is that conventional photoetching process institute is inaccessiable.Therefore, described packing density can be very high.And described magnetosphere is separated by tubular carbon molecule, so do not have magnetospheric effect in other adjacent tubular carbon molecule, the predetermined direction of magnetization can be stablized the maintenance long period, and can improve the reliability of described recording equipment.

As above-mentioned, in the method for making field-causing electron ballistic device of the present invention, in field-causing electron ballistic device of the present invention, in the method for making display unit of the present invention, or in the display unit of the present invention, comprise that described catalyst alignment step and described negative electrode form step, described catalyst alignment step comprises by fusing will have the Metal Distribution of catalyst action on described base material to tubular carbon molecule, described fusing reaches by the modulation heat distribution, described negative electrode forms step and comprises by the described tubular carbon molecule of growing and form described negative electrode, so, by controlling described heat distribution, the pattern (this is that conventional photoetching process institute is inaccessiable) that described catalyst metals can have fine width and meticulous interval distributes, and can obtain described negative electrode, wherein tubular carbon molecule is regularly arranged corresponding to described pattern.

Claims

1. method of making tubular carbon molecule, it comprises:

Catalyst alignment step, this step comprise by fusing arranges the metal that tubular carbon molecule is had catalyst function, and described fusing reaches by the modulation heat distribution;

The growth step of growth tubular carbon molecule,

It is characterized in that described catalyst alignment step comprises:

The fusing step, this step comprises the modulation heat distribution is applied on the substrate surface, to melt the surface of described base material, described base material is included in first material second material as additive, wherein said modulation heat distribution is to make that the energy beam diffraction applies so that periodically form high-temperature area and low-temperature region on the surface of described base material by diffraction grating, and described energy beam is the directional light with single wavelength and homophase; And

Deposition step, this step comprise by the heat radiation of described substrate surface is deposited on described second material in the position corresponding to described heat distribution,

Wherein, described second material is a kind of like this material, can be by described second material being joined in described first material fusing point that reduces described first material,

And wherein, described first material is semiconductor or metal, and described second material is the metal with catalyst function.

2. make the method for tubular carbon molecule according to claim 1, it is characterized in that in described deposition step,, described second material is deposited on the surface of described base material with flat shape by making the surface radiating of described base material.

3. make the method for tubular carbon molecule according to claim 1, it is characterized in that in described deposition step, form projection by the surface radiating that makes described base material on the surface of described base material, described second material is deposited on the tip portion of described projection at least.