CN101908494B - Low-temperature transfer printing method used for microelectronically packaged carbon nanotube bumps - Google Patents
Low-temperature transfer printing method used for microelectronically packaged carbon nanotube bumps Download PDFInfo
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- CN101908494B CN101908494B CN2010102011375A CN201010201137A CN101908494B CN 101908494 B CN101908494 B CN 101908494B CN 2010102011375 A CN2010102011375 A CN 2010102011375A CN 201010201137 A CN201010201137 A CN 201010201137A CN 101908494 B CN101908494 B CN 101908494B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Abstract
The invention relates to a low-temperature transfer printing method used for microelectronically packaged carbon nanotube bumps, and belongs to the technical field of microelectronic device manufacturing processes. The transfer printing method comprises the following steps of: aligning to extrude a metallized silicon wafer of which the surface is provided with the carbon nanotube bumps by using a titanium-gold-indium transfer-printing objective silicon wafer with a circuit pattern at the temperature of between 170 and 200 DEG C and under the pressure of 107 pascals, and transferring the carbon nanotube bumps to the transfer-printing objective silicon wafer with the circuit pattern. The method can rapidly perform transfer printing on the carbon nanotube bumps at small intervals at relatively low temperature in a large area and at a high success rate so as to meet the requirements on concentration and miniaturization of electronic components, reduce the production cost and improve the production efficiency.
Description
Technical field
The present invention relates to a kind of low-temperature transfer printing method that is used for the carbon nano tube salient points of microelectronics Packaging, belong to the microelectronic component manufacturing process technology field.
Background technology
The flip chip bonding connection technology refers to the chip front side of band salient point directly is attached on the substrate down, realizes electricity, calorifics and the mechanical connection of chip and substrate.Compare with traditional Wire Bonding Technology, the flip chip bonding connection technology shortens interconnect length, reduces interconnection resistance and inductance, very big improvement the electrical property and the high frequency performance of encapsulated device.The flip chip bonding connection technology is a kind of high density integrated circuit encapsulation technology, has improved integrated circuit encapsulation technology integral level, satisfies the needs of IC industry development.In recent years, the Bumping Technology development in the upside-down mounting welding solder bump successively occurred rapidly; The indium salient point; Au bump and copper bump, but the size of these salient points and spacing are generally all bigger, can't satisfy the demand for development that electronic devices and components continue densification and miniaturization.
CNT at first comes to light in 1991, and the Iijima Cheng Nan of Japanese NEC Corporation has found multi-walled carbon nano-tubes in cathode deposit in the process of preparation fullerene.Because the special construction of CNT makes it have outstanding physics and chemical property, becomes the most promising one-dimensional material of 21 century.CNT is the seamless tubular shaped structure with big L/D ratio of being curled and being formed by graphite linings, generally can be divided into two kinds: SWCN and multi-walled carbon nano-tubes.CNT has the mechanical strength of superelevation, outstanding conduction and heat conductivility and stable chemical property.The electric property of CNT shows as following five aspects: in the CNT energy gap of ballistic Transport, transistor (energy gap) along with helical structure and diameter variation and change, weak localization and Aharonov-Bohm effect (A-B effect), low temperature enclosed pasture blocking effect and adsorbed gas is to the influence of band structure.These characteristics make CNT be fit to be applied in field emmision material and the inner interconnecting material of electronic device.Because the micro-structure of CNT as the little connection material in the microelectronic component, can reduce package dimension with it, device continues densification and miniaturization development again.
Summary of the invention
The purpose of this invention is to provide a kind of low-temperature transfer printing method that is used for the carbon nano tube salient points of microelectronics Packaging.
Because the high growth temperature environment of CNT causes the carbon nano tube salient points can not direct growth and take shape on the semiconductor device, therefore need the carbon nano tube salient points that will grow and get well, transfer on the required semiconductor device through transfer techniques.Carbon nano tube salient points can significantly improve electricity, heat and the mechanical performance of package interconnect and satisfy the electronic devices and components densification and the miniaturization development trend.Its bump pitch can reach 40 microns even littler.Salient point resistance changes according to bump size is different, and minimum can reach 8 Ω.
The present invention is used for the low-temperature transfer printing method of the carbon nano tube salient points of microelectronics Packaging, it is characterized in that having following process and step:
A. use the method for ultraviolet lithography on transfer printing target silicon chip, to carve the figure of circuit;
B. use sputtering method titanium deposition metal level and gold metal layer successively on transfer printing target silicon chip and photoresist, form conductive layer, wherein, the thickness of titanium is about 20 nanometers, and the thickness of gold is about 100 nanometers;
C. use the electron beam evaporation plating method on the gold metal layer of above-mentioned transfer printing target silicon chip, to deposit the transfer printing layer that one deck is formed by indium metal, the thickness of indium is 250 nanometers～1 micron;
D. use the technology of lifting off, remove the photoresist on the transfer printing target silicon chip, obtain having the titanium-gold-indium transfer printing target silicon chip of circuitous pattern;
E. on another silicon chip, use the electron beam evaporation plating method to deposit 6～12 nano-aluminium oxides and 1～3 nanometer metallic iron successively, the circuitous pattern coupling of its figure and above-mentioned transfer printing target silicon chip forms Catalytic Layer; With the silicon chip that is loaded with Catalytic Layer put into reactor at hydrogen stream to be heated to 500 degrees centigrade and kept 2～6 minutes, make Catalytic Layer become the independently catalyst particle of nanoscale; In reactor, add the acetylene air-flow; Use the method for chemical vapour deposition (CVD); Silicon chip is heated to 700 degrees centigrade rapidly,, carries out the carbon nano tube growth of different time length according to the difference of demand; In nitrogen environment, cool off behind the growth ending, obtain being loaded with initial silicon chip with the carbon nano tube salient points of the circuitous pattern coupling of above-mentioned transfer printing target silicon chip;
F. through the carbon nano tube salient points surface of sputtering method on above-mentioned initial silicon chip deposit thickness successively the metallization coating of gold of titanium and about 50 nanometers of about 10 nanometers;
The initial silicon chip that g. will be loaded with the carbon nano tube salient points after the metallization and the titanium-gold-indium transfer printing target silicon chip that has circuitous pattern be at 170～200 degrees centigrade, and 10
7Aim at extruding 2～5 minutes under Pascal's temperature and the pressure; After naturally cooling to room temperature; Use the initial silicon chip of tweezers gripping carbon nano-tube salient point; Peel manually is just having formation carbon nano tube salient points array on the titanium of circuitous pattern-gold-indium transfer printing target silicon chip from this silicon chip, has accomplished the low-temperature transfer printing process of carbon nano tube salient points.
Characteristics of the present invention are: use this low-temperature transfer printing technology, can realize the low temperature of carbon nano tube salient points, fast, large tracts of land, high success rate transfer printing.The spacing of carbon nano tube salient points can reach 40 microns even littler, therefore, can reduce package dimension, satisfies the needs of high-density packages.
Description of drawings
Fig. 1 forms the transfer process sketch map of carbon nano tube salient points for carbon nano pipe array among the present invention
Fig. 2 is scanning electron microscopy (SEM) the photo figure before and after the carbon nano-pipe array column jump among the present invention
Wherein: (a) be the transfer printing target silicon chip that has the titanium-gold-indium metal level of circuitous pattern
(b) for having the metallized carbon nanotubes salient point shape appearance figure of circuitous pattern before the transfer printing
(c) for having the carbon nano tube salient points shape appearance figure of circuitous pattern after the transfer printing
Fig. 3 is the electrical testing figure of carbon nano tube salient points among the present invention
Embodiment
Specific embodiment of the present invention is described in down at present.
In the present embodiment, the detailed process and the step of the low-temperature transfer printing method of carbon nano tube salient points are described below:
Referring to Fig. 1, Fig. 1 forms the transfer process sketch map of carbon nano tube salient points for carbon nano pipe array among the present invention.
(1) at first use the method for ultraviolet lithography on transfer printing target silicon chip, to carve 100 * 100 graphic array, each figure is the circle of 20 microns of diameters, and circular spacing is 40 microns.
(2) use sputtering method titanium deposition metal level and gold metal layer successively on transfer printing target silicon chip and photoresist, form conductive layer, wherein, the thickness of titanium is 20 nanometers, and the thickness of gold is 100 nanometers.
(3) use the electron beam evaporation plating method on the gold metal layer of above-mentioned transfer printing target silicon chip, to deposit the transfer printing layer that one deck is formed by indium metal, the thickness of indium is 1 micron.
(4) use the technology of lifting off, remove the photoresist on the transfer printing target silicon chip, obtain having the titanium-gold-indium transfer printing target silicon chip of circuitous pattern.
(5) on another silicon chip, use the electron beam evaporation plating method to deposit 10 nano-aluminium oxides and 1 nanometer metallic iron successively, the circuitous pattern coupling of its figure and above-mentioned transfer printing target silicon chip forms Catalytic Layer; With the silicon chip that is loaded with Catalytic Layer put into reactor at hydrogen stream to be heated to 500 degrees centigrade and kept 3 minutes, make Catalytic Layer become the independently catalyst particle of nanoscale; In reactor, add the acetylene air-flow; Use the method for chemical meteorology deposition; Silicon chip is heated to 700 degrees centigrade rapidly, continues to close acetylene and hydrogen gas stream after 40 seconds, feed nitrogen and cool off; Obtain being loaded with the initial silicon chip with the carbon nano tube salient points of the circuitous pattern coupling of above-mentioned transfer printing target silicon chip, bump height is about 60 microns.
(6) through the carbon nano tube salient points surface of sputtering method on above-mentioned initial silicon chip deposit thickness successively be the metallization coating of gold of titanium and 50 nanometers of 10 nanometers; Carbon nano tube salient points after the metallization is 100 * 100 array, and each salient point is 20 microns of diameters, the cylinder that height is 60 microns, and the spacing of salient point is 40 microns.Shown in Fig. 2 (b).
The initial silicon chip that (7) will be loaded with the carbon nano tube salient points after the metallization and the titanium-gold-indium transfer printing target silicon chip that has circuitous pattern be at 170 degrees centigrade, and 10
7Aim at extruding 2 minutes under Pascal's temperature and the pressure; After naturally cooling to room temperature (about 20 degrees centigrade); Use the initial silicon chip of tweezers gripping carbon nano-tube salient point; Peel manually is just having formation carbon nano tube salient points array on the titanium of circuitous pattern-gold-indium transfer printing target silicon chip from this silicon chip, has accomplished the low-temperature transfer printing process of carbon nano tube salient points; Shown in Fig. 2 (c).Bump pitch can reach below 40 microns.
The electrical properties test: the resistance that uses four-point method to record carbon nano tube salient points is about 30 Ω.As shown in Figure 3.
Claims (1)
1. low-temperature transfer printing method that is used for the carbon nano tube salient points of microelectronics Packaging is characterized in that having following process and step:
(1) use the method for ultraviolet lithography on transfer printing target silicon chip, to carve circuitous pattern;
(2) use sputtering method titanium deposition metal level and gold metal layer successively on transfer printing target silicon chip and photoresist, form conductive layer, wherein, the thickness of titanium is about 20 nanometers, and the thickness of gold is about 100 nanometers;
(3) use the electron beam evaporation plating method on the gold metal layer of above-mentioned transfer printing target silicon chip, to deposit the transfer printing layer that one deck is formed by indium metal, the thickness of indium is 250 nanometers～1 micron;
(4) use the technology of lifting off, remove the photoresist on the transfer printing target silicon chip, obtain having the titanium-gold-indium transfer printing target silicon chip of circuitous pattern;
(5) on another silicon chip, use the electron beam evaporation plating method to deposit 6～12 nano-aluminium oxides and 1～3 nanometer metallic iron successively, the circuitous pattern coupling of its figure and above-mentioned transfer printing target silicon chip forms Catalytic Layer; With the silicon chip that is loaded with Catalytic Layer put into reactor at hydrogen stream to be heated to 500 degrees centigrade and kept 2～6 minutes, make Catalytic Layer become the independently catalyst particle of nanoscale; In reactor, add the acetylene air-flow; Use the method for chemical vapour deposition (CVD); Silicon chip is heated to 700 degrees centigrade rapidly,, carries out the carbon nano tube growth of different time length according to the difference of demand; In nitrogen environment, cool off behind the growth ending, obtain being loaded with initial silicon chip with the carbon nano tube salient points of the circuitous pattern coupling of above-mentioned transfer printing target silicon chip;
(6) through the carbon nano tube salient points surface of sputtering method on above-mentioned initial silicon chip deposit thickness successively be the metallization coating of gold of titanium and about 50 nanometers of about 10 nanometers;
(7) will be loaded with the initial silicon chip and the temperature and 10 of the titanium-gold-indium transfer printing target silicon chip that has circuitous pattern of the carbon nano tube salient points after the metallization at 170～200 degrees centigrade
7Aim at extruding 2～5 minutes under Pascal's the pressure; After naturally cooling to room temperature; Use the initial silicon chip of tweezers gripping carbon nano-tube salient point; Peel manually is just having formation carbon nano tube salient points array on the titanium of circuitous pattern-gold-indium transfer printing target silicon chip from this silicon chip, has accomplished the low-temperature transfer printing process of carbon nano tube salient points.
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