CN1710808A - Impedance correction circuit and method - Google Patents
Impedance correction circuit and method Download PDFInfo
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- CN1710808A CN1710808A CN 200410049600 CN200410049600A CN1710808A CN 1710808 A CN1710808 A CN 1710808A CN 200410049600 CN200410049600 CN 200410049600 CN 200410049600 A CN200410049600 A CN 200410049600A CN 1710808 A CN1710808 A CN 1710808A
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- circuit
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- 238000000034 method Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 239000003990 capacitor Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 230000001915 proofreading effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
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- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses an impedance correction circuit, which is used for correcting the equivalent impedance of a semiconductor element. The impedance correction circuit includes: a reference circuit, including a reference device and a first device, for receiving a test signal and outputting a first signal; a second element connected to the semiconductor element, wherein the semiconductor element and the second element form a test circuit for receiving the test signal and outputting a second signal; and a control circuit connected to the reference circuit and the test circuit for comparing the first and second signals to correct the equivalent impedance of the semiconductor device.
Description
Technical field
The present invention is about the impedance correction of semiconductor element, is meant a kind of impedance correction circuit and method that is used for proofreading and correct the equiva lent impedance of semiconductor element especially.
Background technology
Resistance is the most normal primary element that uses in circuit miscellaneous.In general circuit; there be a lot of different types of electric group can select for the designer; but at integrated circuit (integratedcircuit; IC) in; resistance is set consumes too many integrated circuit area usually; therefore generally speaking all can use the characteristic of active element to replace true resistance as far as possible, provide circuit required equiva lent impedance with active element.
Yet; the characteristic of active element is except meeting is subjected to the influence of manufacturing process error (process variation); the variation of environmental parameter also usually can cause the active element characteristic to produce significantly change; for example when variations in temperature; the value of the equiva lent impedance that active element can provide will produce no small change; this work to circuit can cause influence to a certain degree unavoidably, so circuit designers must use special circuit to carry out suitable correction work to the equivalence group of active element is anti-.
Summary of the invention
Therefore one object of the present invention is to provide a kind of anti-impedance correction circuit and method of equivalence group that is used for proofreading and correct an active element.
The equiva lent impedance that disclosed impedance correction circuit is used for proofreading and correct semiconductor element in one embodiment of the invention, this impedance correction circuit includes a reference circuit, one second element and a control circuit.This reference circuit includes a reference element and one first element, is used for receiving a test signal and exports one first signal; This second element is connected to this semiconductor element, and wherein, this semiconductor element and this second element constitute a test circuit, and this test circuit is used for receiving this test signal and exports a secondary signal; This control circuit then is connected to reference circuit and this test circuit, be used for relatively this first with this secondary signal to proofread and correct the equiva lent impedance of this semiconductor element.
Disclosed method then is used for the equiva lent impedance of proofreading and correct semiconductor element with an impedance correction circuit in one embodiment of the invention.Wherein, this impedance correction circuit includes a reference circuit and a test circuit, and this test circuit includes this semiconductor element.This method includes following steps: import a test signal to this reference circuit and this test circuit; The secondary signal exported of one first signal exported of this reference circuit and this test circuit relatively; And, the equiva lent impedance of proofreading and correct this semiconductor element according to relatively result.
Description of drawings
Fig. 1 is the first embodiment schematic diagram of impedance correction circuit of the present invention.
Fig. 2 is the second embodiment schematic diagram of impedance correction circuit of the present invention.
Fig. 3 is an embodiment flow chart of equiva lent impedance bearing calibration of the present invention.
The reference numeral explanation
100,200 impedance correction circuit
110,210 reference circuits
115 reference elements
120,140 electric capacity
130,230 test circuits
135 semiconductor elements
150 comparators
170 controllers
Embodiment
See also Fig. 1, Fig. 1 is the first embodiment schematic diagram of impedance correction circuit of the present invention.Impedance correction circuit 100 among Fig. 1 is used for the equiva lent impedance of calibrating semiconductor element 135, and in present embodiment, semiconductor element 135 is a MOS transistor.Impedance correction circuit 100 includes a reference circuit 110, is made up of a reference element 115 and one first electric capacity 120; One second electric capacity 140, wherein the semiconductor element 135 and second electric capacity 140 constitute a test circuit 130; One comparator 150; An and controller 170.Those skilled in the art should understand, and the parameter control for semicoductor capacitor in manufacturing technology is comparatively accurate comparatively speaking, so in present embodiment first electric capacity 120 and second electric capacity 140 are designed to have identical capacitance.
Desire is carried out timing to the equiva lent impedance of semiconductor element 135, at first impedance correction circuit 100 can be imported a test signal Vtest in the reference circuit 110 and the input of test circuit 130, via the circuit characteristic (present embodiment be the characteristic of low pass filter) of reference circuit 110 with test circuit 130, these two circuit can be exported one first a signal V1 and a secondary signal V2 respectively.Suppose that desire proofreaies and correct the equiva lent impedance of semiconductor element 135 for identical with the equiva lent impedance of reference element 115, so the first signal V1 should equal secondary signal V2 in present embodiment.
Yet, because the manufacturing process error or the factors such as variation of environmental parameter, cause the equiva lent impedance of semiconductor element 135 probably and be not equal to the equiva lent impedance of reference element 115, so the first signal V1 that reference circuit 110 is exported will be different from the secondary signal V2 that test circuit 130 is exported, this moment, comparator 150 can detect the difference between the first signal V1 and the secondary signal V2, and the equiva lent impedance (in present embodiment, changing the current potential on semiconductor element 135 grids) of regulating semiconductor element 135 by controller 170 according to the comparative result of comparator 150, be equal to secondary signal V2 up to the first signal V1, the equiva lent impedance of semiconductor element 135 promptly is equal to the equiva lent impedance of reference element 115 at this moment.
In the present embodiment first electric capacity 120 and second electric capacity 140 are designed to have identical capacitance, yet those skilled in the art should understand, also first electric capacity 120 and second electric capacity 140 can be designed to have a proportionate relationship, because the signal value of the first signal V1 and secondary signal V2 is relevant to the RC low-pass characteristic of reference circuit 110 and test circuit 130 respectively in present embodiment, so comparator 150 and 170 of controllers can come according to the resistance value of this proportionate relationship and reference element 115 equivalent impedance of semiconductor element 135 is regulated.
In addition, impedance correction circuit 100 can also utilize several switches (be not illustrated in Fig. 1 in), after the correction of finishing semiconductor element 135,, and connect go back to original position in side circuit with the cut-out that is electrically connected of semiconductor element 135 with impedance correction circuit 100.Therefore if when including a plurality of semiconductor element 135 that is used to provide similar impedance operator in the circuit, only need use same impedance correction circuit 100, cooperate the suitably switching circuit of design, can proofread and correct the equiva lent impedance of a plurality of semiconductor elements 135 in regular turn, like this then only need an impedance correction circuit when carrying out the operation of impedance correction at a plurality of semiconductor elements, reduced the complexity of circuit design.
In aforementioned first embodiment of the present invention, reference circuit 110 and test circuit 130 all have the circuit structure of low pass filter, yet in fact circuit designers can also use the circuit structure of other kinds to be used as reference circuit and test circuit among the present invention, for instance, high pass filter.See also Fig. 2, Fig. 2 is the second embodiment schematic diagram of impedance correction circuit of the present invention.The main difference of the impedance correction circuit 200 of Fig. 2 and 100 two circuit of impedance correction circuit of Fig. 1 is: the circuit structure that reference circuit 110 among Fig. 1 and test circuit 130 all have low pass filter, yet, the circuit structure that reference circuit 210 among Fig. 2 and test circuit 230 have high pass filter.In addition, the basic functional principle of circuit and effect are roughly the same among Fig. 1 and Fig. 2, so seldom give unnecessary details at this.Similarly, if when including a plurality of semiconductor element 135 that is used to provide similar resistance characteristic in the circuit, only need use same impedance correction circuit 200 shown in Figure 2, cooperate the suitably switching circuit of design, impedance correction circuit 200 just can be proofreaied and correct the equiva lent impedance of a plurality of semiconductor elements 135 in regular turn.
Though in two examples of Fig. 1 and Fig. 2, all be to be used as reference circuit and test circuit with the filter construction that resistance, electric capacity are formed, yet those skilled in the art should understand, and other kinds also are feasible by various circuit structures active, that passive component is formed.As long as when importing identical test signal, comparator can detect the difference between reference circuit and the test circuit institute output signal, and pass through the equiva lent impedance of controller calibrating semiconductor element, in the scope of spirit promptly according to the invention and institute's desire protection.
Next then see also Fig. 3, Fig. 3 is an embodiment flow chart of equiva lent impedance bearing calibration proposed by the invention, can utilize disclosed impedance correction circuit 100 of embodiment or 200 effects of carrying out the equiva lent impedance of semiconductor element among Fig. 1 of the present invention and Fig. 2 just to operate.Each step among Fig. 3 below will be described in detail in detail:
Step 310: import a test signal to this reference circuit and this test circuit.
Step 320: the secondary signal exported of one first signal exported of this reference circuit and this test circuit relatively.
Step 330: the equiva lent impedance of proofreading and correct this semiconductor element according to relatively result.Wherein, if this secondary signal is not equal to this first signal, the equiva lent impedance of then regulating this semiconductor element is so that this secondary signal levels off to this first signal.
The above only is preferred embodiment of the present invention, and all equivalences of carrying out according to claim of the present invention change and revise, and all should belong to covering scope of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410049600 CN1710808A (en) | 2004-06-17 | 2004-06-17 | Impedance correction circuit and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410049600 CN1710808A (en) | 2004-06-17 | 2004-06-17 | Impedance correction circuit and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1710808A true CN1710808A (en) | 2005-12-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410049600 Pending CN1710808A (en) | 2004-06-17 | 2004-06-17 | Impedance correction circuit and method |
Country Status (1)
| Country | Link |
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| CN (1) | CN1710808A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102742158A (en) * | 2009-09-14 | 2012-10-17 | 拉姆伯斯公司 | High resolution output driver |
| CN107959495A (en) * | 2016-10-17 | 2018-04-24 | 格芯公司 | Transmit drivers ' impedance correcting circuit |
-
2004
- 2004-06-17 CN CN 200410049600 patent/CN1710808A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102742158A (en) * | 2009-09-14 | 2012-10-17 | 拉姆伯斯公司 | High resolution output driver |
| CN102742158B (en) * | 2009-09-14 | 2016-10-19 | 拉姆伯斯公司 | High resolution output driver |
| CN107959495A (en) * | 2016-10-17 | 2018-04-24 | 格芯公司 | Transmit drivers ' impedance correcting circuit |
| CN107959495B (en) * | 2016-10-17 | 2021-04-16 | 格芯(美国)集成电路科技有限公司 | Impedance correction circuit of transmission driver |
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