CN1703773B - 层压体以及用该层压体制造超薄基片的方法和设备 - Google Patents

层压体以及用该层压体制造超薄基片的方法和设备 Download PDF

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Publication number
CN1703773B
CN1703773B CN03812196.4A CN03812196A CN1703773B CN 1703773 B CN1703773 B CN 1703773B CN 03812196 A CN03812196 A CN 03812196A CN 1703773 B CN1703773 B CN 1703773B
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layer
photothermal transformation
layered product
substrate
adhesive
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CN1703773A (zh
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野田一树
岩泽優
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3M Innovative Properties Co
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3M Innovative Properties Co
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  • Mechanical Treatment Of Semiconductor (AREA)
  • Laminated Bodies (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
CN03812196.4A 2002-06-03 2003-06-02 层压体以及用该层压体制造超薄基片的方法和设备 Expired - Lifetime CN1703773B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002161846 2002-06-03
JP161846/2002 2002-06-03
JP350247/2002 2002-12-02
JP2002350247A JP4565804B2 (ja) 2002-06-03 2002-12-02 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
PCT/US2003/017236 WO2004006296A2 (en) 2002-06-03 2003-06-02 Laminate body and corresponding methods and apparatus

Related Child Applications (1)

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CN201110216992.8A Division CN102420114B (zh) 2002-06-03 2003-06-02 层压体以及用该层压体制造超薄基片的方法和设备

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CN1703773A CN1703773A (zh) 2005-11-30
CN1703773B true CN1703773B (zh) 2011-11-16

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CN (1) CN1703773B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102420114A (zh) * 2002-06-03 2012-04-18 3M创新有限公司 层压体以及用该层压体制造超薄基片的方法和设备
CN108335994A (zh) * 2017-12-28 2018-07-27 大族激光科技产业集团股份有限公司 晶片接合结构、晶片接合方法、晶片剥离方法及装置

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JP2011040419A (ja) * 2008-05-22 2011-02-24 Fuji Electric Systems Co Ltd 半導体装置の製造方法及びそのための装置
JP4725638B2 (ja) * 2008-12-09 2011-07-13 カシオ計算機株式会社 半導体装置の製造方法
JP5439583B2 (ja) * 2009-04-16 2014-03-12 スス マイクロテク リソグラフィー，ゲーエムベーハー 一時的なウェハーボンディング及びデボンディングのための改善された装置
WO2012077471A1 (ja) * 2010-12-06 2012-06-14 株式会社きもと レーザーダイシング用補助シート
CN102307040A (zh) * 2011-05-03 2012-01-04 铜陵市三科电子有限责任公司 一种smd石英晶片晶砣的制备方法
KR101403863B1 (ko) * 2011-11-14 2014-06-09 제일모직주식회사 이방성 도전 필름
JP2013107168A (ja) * 2011-11-21 2013-06-06 Toyo Quality One Corp ガラス研磨方法及びこれに用いる積層シート
KR101525999B1 (ko) 2011-12-16 2015-06-04 제일모직주식회사 열전사 필름
JP6006569B2 (ja) * 2012-07-23 2016-10-12 東京応化工業株式会社 積層体及び積層体の製造方法
US20140144593A1 (en) * 2012-11-28 2014-05-29 International Business Machiness Corporation Wafer debonding using long-wavelength infrared radiation ablation
WO2014142303A1 (ja) 2013-03-14 2014-09-18 富士電機株式会社 半導体デバイスの製造方法
WO2014163188A1 (ja) 2013-04-04 2014-10-09 富士電機株式会社 半導体デバイスの製造方法
CN103192199B (zh) * 2013-04-18 2015-04-29 苏州光韵达光电科技有限公司 一种用于光纤激光切割陶瓷的吸收剂
TWI610374B (zh) * 2013-08-01 2018-01-01 格芯公司 用於將搬運器晶圓接合至元件晶圓以及能以中段波長紅外光雷射燒蝕釋出之接著劑
CN104979262B (zh) * 2015-05-14 2020-09-22 浙江中纳晶微电子科技有限公司 一种晶圆分离的方法
TW201707959A (zh) * 2015-08-21 2017-03-01 Jsr Corp 基材的處理方法、暫時固定用組成物及半導體裝置
JP6859729B2 (ja) * 2016-07-05 2021-04-14 昭和電工マテリアルズ株式会社 仮固定用樹脂組成物、仮固定用樹脂フィルム、仮固定用樹脂フィルムシート及び半導体装置の製造方法
CN108231646A (zh) * 2016-12-13 2018-06-29 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
KR102652732B1 (ko) * 2016-12-15 2024-03-28 쓰리엠 이노베이티브 프로퍼티즈 컴파니 점착 필름
JP6558355B2 (ja) * 2016-12-19 2019-08-14 信越半導体株式会社 Ｓｏｉウェーハの製造方法
JP6908379B2 (ja) * 2016-12-27 2021-07-28 リンテック株式会社 粘着シートおよび液晶表示部材
TW201837009A (zh) * 2017-03-30 2018-10-16 日商日本碍子股份有限公司 暫時固定基板及電子元件的模塑方法
TWI665281B (zh) 2018-03-23 2019-07-11 台虹科技股份有限公司 暫時性接著用組成物以及暫時性接著用溶液
JPWO2021235406A1 (ja) * 2020-05-21 2021-11-25
CN111834280A (zh) * 2020-07-24 2020-10-27 武汉新芯集成电路制造有限公司 临时键合方法
CN112428165B (zh) * 2020-10-22 2021-10-22 德阳展源新材料科技有限公司 一种阻尼布抛光垫的制备方法

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US5476566A (en) * 1992-09-02 1995-12-19 Motorola, Inc. Method for thinning a semiconductor wafer
US6214520B1 (en) * 1999-01-15 2001-04-10 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
US6284425B1 (en) * 1999-12-28 2001-09-04 3M Innovative Properties Thermal transfer donor element having a heat management underlayer

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JP3535318B2 (ja) * 1996-09-30 2004-06-07 富士通株式会社 半導体装置およびその製造方法
US6849328B1 (en) * 1999-07-02 2005-02-01 Ppg Industries Ohio, Inc. Light-transmitting and/or coated article with removable protective coating and methods of making the same
JP2001185519A (ja) * 1999-12-24 2001-07-06 Hitachi Ltd 半導体装置及びその製造方法
JP4565804B2 (ja) * 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
JP4405246B2 (ja) * 2003-11-27 2010-01-27 スリーエム イノベイティブ プロパティズ カンパニー 半導体チップの製造方法

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US5476566A (en) * 1992-09-02 1995-12-19 Motorola, Inc. Method for thinning a semiconductor wafer
US6214520B1 (en) * 1999-01-15 2001-04-10 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
US6284425B1 (en) * 1999-12-28 2001-09-04 3M Innovative Properties Thermal transfer donor element having a heat management underlayer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102420114A (zh) * 2002-06-03 2012-04-18 3M创新有限公司 层压体以及用该层压体制造超薄基片的方法和设备
CN102420114B (zh) * 2002-06-03 2015-04-22 3M创新有限公司 层压体以及用该层压体制造超薄基片的方法和设备
CN108335994A (zh) * 2017-12-28 2018-07-27 大族激光科技产业集团股份有限公司 晶片接合结构、晶片接合方法、晶片剥离方法及装置

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JP5048707B2 (ja) 2012-10-17
CN1703773A (zh) 2005-11-30
JP2009155652A (ja) 2009-07-16

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