CN1693908A - Micro electric field sensor based on P-type metal-oxide transistor structure - Google Patents
Micro electric field sensor based on P-type metal-oxide transistor structure Download PDFInfo
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- CN1693908A CN1693908A CN 200510040281 CN200510040281A CN1693908A CN 1693908 A CN1693908 A CN 1693908A CN 200510040281 CN200510040281 CN 200510040281 CN 200510040281 A CN200510040281 A CN 200510040281A CN 1693908 A CN1693908 A CN 1693908A
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Abstract
The invention discloses a micro electric field sensor which is used for collecting electric field signals which bases on the structure of a P-type metal oxide semi-conductor tube. It includes a N-type bottom on which two impure P-type contiguity regions sharing a flat surface. A metallic lead on contiguity regions which are linked by a P-type channel. On the surfaces of the P-type contiguity regions and channel, there is a SiO2 layer. The advantages of the invention are using the drift principle of electric charges in the intermingling semi-conductor, inducting the electric field with a static state, thus raise the reliability of the electric field detection.
Description
Technical field
The present invention relates to a kind of sensor that is used to gather electric field signal, relate in particular to a kind of micro electric field sensor based on the P-type mos tubular construction.
Background technology
The principle of induction of existing electric-field microsensor mainly is the principle of dynamically responding to, and promptly uses resonance structure alternately to stop the conductor of induction field, thereby produces induction current.The major defect of the electric-field microsensor of this dynamic induction is: have relatively high expectations to processing line owing to little resonance structure (1), and the encapsulation of bascule is difficult, therefore uses its reliability of electric-field microsensor of this structure relatively poor.(2) adopt the principle of dynamic induction field to make its resolution not high (highest resolution of report is 630V/m at present).
Summary of the invention
The invention provides a kind of highly sensitive, micro electric field sensor that reliability is high based on the P-type mos tubular construction.
The present invention adopts following technical scheme:
A kind of micro electric field sensor that is used to gather electric field signal based on the P-type mos tubular construction, comprise n type substrate, on substrate, be provided with coplanar two heavily doped P type contact regions, on heavily doped P type contact region is metal lead wire, between these two heavily doped P type contact regions, be provided with P type raceway groove and be attached thereto respectively, in P type contact region and the surface of P type raceway groove be provided with SiO
2Layer.
Compared with prior art, the present invention has following advantage:
(1) the present invention utilizes the drift principle (positive charge moves along direction of an electric field, the contrary direction of an electric field motion of negative charge) of electric charge in the doped semiconductor, induction field statically, thus improved the reliability that electric field detects.
(2) the present invention utilizes the raceway groove of high breadth length ratio and add small electric current on raceway groove, has improved the resolution that electric field detects.
Description of drawings
Fig. 1 is a front view of the present invention.
Fig. 2 is a vertical view of the present invention.
Embodiment
A kind of micro electric field sensor that is used to gather electric field signal based on the P-type mos tubular construction, comprise n type substrate 1, on substrate 1, be provided with coplanar two heavily doped P type contact regions 3, on heavily doped P type contact region 3 is metal lead wire 5, between these two heavily doped P type contact regions, be provided with P type raceway groove 2 and be attached thereto respectively, in P type contact region 3 and the surface of P type raceway groove 2 be provided with SiO
2Layer 4, its thickness can be 50nm.
After two heavily doped contact regions of p of the present invention add voltage, when the p raceway groove of external electrical field incident electric-field microsensor, charge carrier in the raceway groove (hole) can reduce accordingly, thereby channel current is reduced, and promptly Wai Jie electric field has caused the variation of channel current.During use, utilize the standard electric field to demarcate the channel current of this electric-field microsensor earlier.When measuring electric field, then by measuring the channel current of microsensor, the contrast calibration value can obtain the intensity of incident electric field.
The present invention can adopt following technology preparation:
A: growth end oxygen on p type substrate Si forms surperficial SiO
2Layer;
B: implanted channel forms P type raceway groove;
C: ion injects the contact region, forms the contact region;
D: lithography fair lead, depositing metal and etching form metal lead wire.
Claims (1)
1, a kind of micro electric field sensor that is used to gather electric field signal based on the P-type mos tubular construction, comprise n type substrate (1), it is characterized in that on substrate (1), being provided with coplanar two heavily doped P type contact regions (3), going up in heavily doped P type contact region (3) is metal lead wire (5), between these two heavily doped P type contact regions, be provided with P type raceway groove (2) and be attached thereto respectively, in P type contact region (3) and the surface of P type raceway groove (2) be provided with SiO
2Layer (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100402814A CN1330968C (en) | 2005-05-27 | 2005-05-27 | Micro electric field sensor based on P-type metal-oxide transistor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100402814A CN1330968C (en) | 2005-05-27 | 2005-05-27 | Micro electric field sensor based on P-type metal-oxide transistor structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1693908A true CN1693908A (en) | 2005-11-09 |
| CN1330968C CN1330968C (en) | 2007-08-08 |
Family
ID=35352966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100402814A Expired - Fee Related CN1330968C (en) | 2005-05-27 | 2005-05-27 | Micro electric field sensor based on P-type metal-oxide transistor structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1330968C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101683966B (en) * | 2008-09-24 | 2012-05-02 | 中国科学院电子学研究所 | Packaging structure for miniature electric field sensor and packaging method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5140393A (en) * | 1985-10-08 | 1992-08-18 | Sharp Kabushiki Kaisha | Sensor device |
| JPH03274452A (en) * | 1990-03-26 | 1991-12-05 | Toyota Central Res & Dev Lab Inc | Field-effect transistor type oxygen sensor |
| US5627398A (en) * | 1991-03-18 | 1997-05-06 | Iskra Stevci--Industrija Merilne in Upravljalne Tehnike Kranj, D.O.O. | Hall-effect sensor incorporated in a CMOS integrated circuit |
| CN1069134C (en) * | 1996-02-02 | 2001-08-01 | 吉林大学 | Gas sensor for detecting nitrogen dioxide and its prodn technology |
-
2005
- 2005-05-27 CN CNB2005100402814A patent/CN1330968C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101683966B (en) * | 2008-09-24 | 2012-05-02 | 中国科学院电子学研究所 | Packaging structure for miniature electric field sensor and packaging method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1330968C (en) | 2007-08-08 |
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Granted publication date: 20070808 Termination date: 20100527 |