CN1661797A - Constructed configuration of heat sink capable of embedding semiconductor of electronic module - Google Patents
Constructed configuration of heat sink capable of embedding semiconductor of electronic module Download PDFInfo
- Publication number
- CN1661797A CN1661797A CN 200410006384 CN200410006384A CN1661797A CN 1661797 A CN1661797 A CN 1661797A CN 200410006384 CN200410006384 CN 200410006384 CN 200410006384 A CN200410006384 A CN 200410006384A CN 1661797 A CN1661797 A CN 1661797A
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- heat sink
- semiconductor
- electronic module
- substrate
- constructed configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The structure includes a heat sink and at least an electronic module. Multiple dish parts are formed on basal face of the heat sink. Through the dish parts, the heat sink is capable of embedding electronic module and accommodating semiconductor chip. Electric functions of semiconductor device can be adjusted by electronic module embedded on the heat sink. Heat elimination issue of the semiconductor device is also solved by the heat sink. The invention solves heat elimination, electromagnetic interference and adjustment of electrical function, possessing advantages of simplified working steps, low cost, increasing flexibility for laying out wiring. Moreover, it is not needed for redesigning base plate for different electrical functions based on different requirements.
Description
Technical field
The invention relates to a kind of semi-conductor packaging heat spreader structure,, can effectively promote the electrical and thermal diffusivity function of semiconductor device particularly about a kind of heat spreader structure of integrating electronic building brick and radiator structure simultaneously.
Background technology
Ball grid array (Ball Grid Array, BGA) encapsulation is a kind of advanced person's a semiconductor die package technology, its characteristics are to adopt substrate to settle semiconductor chip, and plant the soldered ball (Solder Ball) of putting a plurality of one-tenth palisade arranged at this substrate back, make on the semiconductor chip carrier of same units area and can hold more I/O links (I/O connection), demand with the semiconductor chip that satisfies Highgrade integration (Integration), and by these soldered balls with the welding of whole encapsulation unit and be electrically connected to outside electronic installation, as printed circuit board (PCB).
In addition, flourish along with electronic industry, electronic product also marches toward multi-functional, high performance R﹠D direction gradually.For satisfying the package requirements of semiconductor device high integration (Integration) and microminiaturized (Miniaturization), provide a plurality of main passive components and circuit to carry the circuit board that connects and also develop into multi-layer sheet by lamina gradually, under limited space, enlarge available circuit area on the circuit board by interlayer interconnection technique (Interlayer Connection), thereby cooperate highdensity integrated circuit (Integrated Circuit) demand.
Yet, electrical functionality for lifting or stable electronic product, need on semiconductor device, to integrate for example resistor assembly (Resistors), capacitance component (Capacitors) and Inductive component passive components (Passive Component) such as (Inductors), utilize resistor assembly to change the size of current of circuit, capacitance component provides the function of stored voltage or filtering, and Inductive component comes filtering to have the electric current of noise.
See also Fig. 7, United States Patent (USP) the 6th, 108, No. 212 cases are directly to form weld pad 21 and electrode tip 22 in substrate 20, and form electrical resistors (Electricallybesistivevolume) 23 to constitute passive component 22 of this weld pad 21 and electrode tips, be electrically conducted with all the other electronic installations 25 by planting the metal coupling 24 that is connected on this weld pad 21 for this substrate 20, provide semiconductor device electrical quality preferably by this weld pad 21, electrode tip 22 with the passive component that electrical resistor 23 constitutes simultaneously.But the integration mode of this passive component, make the overall structure and the required complex procedures degree thereof of substrate strengthen, do not meet cost benefit, simultaneously, at the different designs demand as electric characteristics such as resistance value and capacitances the time, must redesign this substrate, cause the significantly lifting of manufacturing cost, also can produce the puzzlement of handling of goods and materials and the increase of material stock cost.
In addition, because the density of electronic building brick on the semiconductor device and electronic circuit is highly integrated, its work produces a lot of heats, with the effective loss of these heats, can seriously shorten the performance and the life-span of semiconductor device as untimely; Simultaneously, general semiconductor device lacks effective screening effect (Shielding), is subjected to external electromagnetic and interference of noise easily.
Therefore, how in semiconductor device, to integrate the electronic building brick that comprises passive component or driving component, under compact and the multi-functional and high electrical trend of electronic product requirement now, electronic building bricks such as the passive component of effective quantity and semiconductor chip are provided in semiconductor device, to promote the electrical functionality of electronic product, simultaneously again effectively the heat of loss semiconductor device with the ELECTROMAGNETIC OBSCURANT effect is provided, be urgency problem to be solved at present.
Summary of the invention
For overcoming the shortcoming of above-mentioned prior art, main purpose of the present invention is to provide a kind of constructed configuration of heat sink capable of embedding semiconductor of electronic module that can solve heat radiation, electromagnetic interference and the electrical problem of encapsulation unit simultaneously.
Another object of the present invention is to provide a kind of can be simultaneously in conjunction with the constructed configuration of heat sink capable of embedding semiconductor of electronic module of electronic building brick and heat sink.
Another purpose of the present invention is to provide a kind of constructed configuration of heat sink capable of embedding semiconductor of electronic module that increases the flexibility of conductor package substrate configuration.
A further object of the present invention is to provide a kind of step and cost of simplifying working process, need not to redesign this substrate, and then avoid producing the constructed configuration of heat sink capable of embedding semiconductor of electronic module of the increase of handling of goods and materials and material stock cost at the electrical functionality of different demands.
For reaching above-mentioned and other purpose, constructed configuration of heat sink capable of embedding semiconductor of electronic module of the present invention mainly comprises: heat sink, be formed with a plurality of recesses on this heat sink bottom surface, and be embedded into electronic building brick and take in semiconductor chip for this heat sink; At least one electronic building brick, it is embedded in the recess of this heat sink, and connect the base plate for packaging of putting to being electrically connected with semiconductor chip, be construed as semiconductor device, be embedded into the electrical functionality that electronic building brick is adjusted this semiconductor device by this heat sink, and take in chip by the recess of this heat sink, thus the ELECTROMAGNETIC OBSCURANT function of this semiconductor device is provided, and utilize this heat sink to improve the radiating effect of semiconductor device.
Above-mentioned semiconductor device comprises: conductor package substrate has first surface and second surface; At least one semiconductor chip and at least one electronic building brick, it connects puts and is electrically connected to this substrate first surface; Heat sink, it connects and places this substrate first surface, and this heat sink surface is formed with a plurality of recesses for being embedded into this electronic building brick and taking in this semiconductor chip; And a plurality of conductive components, connect and place this substrate second surface, be electrically conducted to external device (ED) for this semiconductor device.
In sum, because constructed configuration of heat sink capable of embedding semiconductor of electronic module of the present invention is integrated with heat sink and at least one electronic building brick, this electronic building brick can be passive component or driving component, passive component is for example capacitance component, resistor assembly, Inductive component or chip-shaped passive component etc., and this driving component is a semiconductor chip; Simultaneously, in this heat sink, offer accommodation space of driving component (for example integrated circuit (IC) chip) of semiconductor device, electrical functionality and thermal diffusivity with synchronous this semiconductor device of lifting, be coupled to this semiconductor chip by this heat sink, thereby the heat that effective loss semiconductor chip produces, and this chip screening effect (Shielding) is provided, make this chip avoid extraneous electromagnetic interference (Electro magnet Interference, EMI); In addition, the driving component of this semiconductor device or passive component all can be accommodated in the recess of this heat sink, avoiding existing directly settles the operation that this electronic building brick caused loaded down with trivial details in substrate, and when satisfying the electric characteristics of different designs demand, redesign the increase of the manufacturing cost that this substrate causes.
Description of drawings
Fig. 1 is the schematic perspective view of constructed configuration of heat sink capable of embedding semiconductor of electronic module embodiment 1 of the present invention;
Fig. 2 is embodiment 1 schematic perspective view that is embedded with electronic building brick in the recess of constructed configuration of heat sink capable of embedding semiconductor of electronic module of the present invention;
Fig. 3 is the generalized section of the semiconductor device embodiment 1 of application constructed configuration of heat sink capable of embedding semiconductor of electronic module of the present invention institute construction;
Fig. 4 is the schematic perspective view of constructed configuration of heat sink capable of embedding semiconductor of electronic module embodiment 2 of the present invention;
Fig. 5 is embodiment 2 schematic perspective views that are embedded with electronic building brick in the recess of constructed configuration of heat sink capable of embedding semiconductor of electronic module of the present invention;
Fig. 6 is the generalized section of the semiconductor device embodiment 2 of application constructed configuration of heat sink capable of embedding semiconductor of electronic module of the present invention institute construction; And
Fig. 7 has the semiconductor device generalized section of integrating passive component in substrate now.
Embodiment
Below be by particular specific embodiment explanation embodiments of the present invention.
Embodiment 1
Fig. 1 and Fig. 2 are the constructed configuration of heat sink capable of embedding semiconductor of electronic module schematic diagrames of the embodiment of the invention 1.
As shown in Figure 1, constructed configuration of heat sink capable of embedding semiconductor of electronic module of the present invention, mainly include heat sink 14 and at least one electronic building brick, this heat sink 14 can adopt the material with high-termal conductivity and hardness, metal material for example, wherein, with copper become better, it has a upper surface and a lower surface, and be formed with a plurality of correspondences at the lower surface of this heat sink and be preset with the recess 140 that is embedded into electronic building brick, this electronic building brick can be passive component or driving component, and passive component can for example be a capacitance component, resistor assembly, Inductive component or chip-shaped passive component etc., this driving component is a semiconductor chip.
As shown in Figure 2, in the recess 140 of this heat sink 14, connect and be equipped with at least one passive component 13, this passive component 13 can be resistor assembly, capacitance component and Inductive component.Wherein this passive component 13 can utilize coating technique, screen printing technology for example, the passive component material is formed in the recess 140, or ceramic passive component material is formed in the recess 140 through the high temperature sintering program, also can provide a kind of passive component structure, be installed in this heat sink recess 140 by adhesive, and form electrode 131 on its surface.Certainly this passive component also can be chip-shaped passive component 15, and forms a plurality of electrodes 151 on its surface, so as to resistor assembly, capacitance component, Inductive component or chip-shaped passive component are incorporated in this heat sink recess.The structural form of these passive components 13,15 all is the common technology means, and so non-this case technical characterictic is no longer explanation.It not is to exceed with general passive component 13 or chip-shaped passive component 15 that the recess 140 of described heat sink 14 connects the electronic building brick of putting, and this recess 141 also can ccontainingly belong to the electronic building brick of driving component.
Fig. 3 is the semiconductor device generalized section of application constructed configuration of heat sink capable of embedding semiconductor of electronic module of the present invention institute construction.
As shown in the figure, this semiconductor device 10 is that semiconductor chip is finished its structure dress according to covering crystal type, mainly comprise: conductor package substrate 11, this conductor package substrate 11 has first surface 111 and second surface 112, connects the electric connection pad 113 of putting and be electrically connected to this substrate first surface 111 at least one semiconductor chip 12; Heat sink 14, its lower surface are formed with the recess 140 of a plurality of corresponding semiconductor chips or passive component, and are embedded with passive component 13,15 in this recess 140.When this heat sink 14 is coupled to this substrate first surface 111 by its lower surface, can make this passive component 13,15 that is embedded in these heat sink 14 lower surface recesses 140 be electrically connected to the electric connection pad 113 of this substrate first surface 111, and this semiconductor chip that is electrically connected to this substrate 11 in advance 12 is accommodated in this heat sink recess 140 by its electrode 131,151.In addition, connect when putting, can put at its phase mutual connection and fill potting resin between face, reducing between heat sink 14 and substrate 11 structures, and can borrow this potting resin increase heat transfer efficiency because of the thermal stress that thermal dilation difference was produced to this substrate first surface 111 at this heat sink 14; For avoiding this potting resin overflow to this substrate, can form continuous protuberance 142 at these heat sink 14 bottom surface peripheries, with the overflow of effective prevention resin; And a plurality of conductive components 16, it connects puts on this substrate second surface 112, and this semiconductor device 10 can be electrically conducted to external device (ED) by these conductive components 16.As previously mentioned, it not is to exceed with general passive component 13 or chip-shaped passive component 15 that the recess 140 of this heat sink 14 connects the electronic building brick of putting, and this recess 141 also can ccontainingly belong to the electronic building brick of driving component.
This conductor package substrate 11 can be to finish the bilayer of pre-treatment or the substrate of multilayer circuit layer, just by middle layer plate is provided, and at this middle layer plate surface formation first conductive metal layer, and this first conductive metal layer of patterning and form first circuit layer, then, increase a layer operation, on this substrate first circuit layer, to form second conductive metal layer via insulating barrier, afterwards, this second conductive metal layer of patterning is to form the second circuit layer, this mode that circulates so according to demand continues to increase a layer operation, to form the substrate of multilayer circuit layer.Wherein, this insulating barrier can be insulation organic material or ceramic material formations such as epoxy resin (Expoxyresin), polyimides (Polyimide), cyanate ester (Cyanate Ester), glass fibre, Bismaleimide Triazine (BT, Bismaleimide Triazine) or blending epoxy and glass fibre; This circuit layer generally is based on the higher copper of conductivity, transmits the conductor material of signal as this substrate, and form a plurality of conductive through holes (Via) in the insulating barrier of this substrate, so that electrically connect adjacent circuit layer.In addition, this substrate 11 can form by pressing method (Laminated) and Layer increasing method modes such as (Build-up), and this also belongs to prior art, and so non-this case technical characterictic is no longer narration.
This semiconductor chip 12 has circuit face 121 and inverter circuit face 122, on the circuit face 121 of this semiconductor chip 12, be formed with a plurality of metal couplings 123, this semiconductor chip 12 is connect and puts to cover crystal type, and be electrically connected to the electric connection pad 113 of this substrate first surface 111.In addition, this semiconductor chip also can be on its inverter circuit face 122 connects by adhesive to be put at this substrate first surface 111, and be electrically connected to this substrate (figure mark) by routing mode (Wire bonding), the present invention just only can be implemented on the crystal covering type encapsulation, also may be implemented on routing type encapsulation, this should be to be familiar with the equivalence enforcement that the personnel of semiconductor die package can know by inference.
The lower surface of this heat sink 14 is formed with the recess 140 of a plurality of corresponding semiconductor chips and passive component, this is embedded with passive component 13, the lower surface of 15 heat sink 14 is coupled to this substrate first surface 111, and make this passive component 13,15 when being electrically connected to this substrate 11, this semiconductor chip that is electrically connected to this substrate 11 in advance 12 is accommodated in this recess 140, heat by these heat sink 14 effective loss semiconductor chip 12 work generations, and provide this semiconductor chip 12 screening effects (Shielding), avoid this semiconductor chip 12 be subjected to extraneous electromagnetic interference (Electromagnet Interference, EMI).
This conductive component 16 can be a plurality of soldered balls or conductive pole (figure is mark not), plant the second surface 112 that is connected on this substrate 11 by planting ball operation (BaU Implantation), utilize these soldered balls with this semiconductor chip and external device (ED), electrically connect as printed circuit board (PCB).
Embodiment 2
Fig. 4 and Fig. 5 are embodiment 2 schematic diagrames of constructed configuration of heat sink capable of embedding semiconductor of electronic module of the present invention.
As shown in the figure, the heat sink of the embodiment of the invention 2 14 is roughly the same with the technology that embodiment 1 is disclosed, its difference be in, connect in the present embodiment 2 to put and be used to take in the semiconductor chip place at this heat sink 14 and be formed with the perforate 141 that runs through its upper and lower surface.
Fig. 6 is the generalized section of the semiconductor device embodiment 2 of application constructed configuration of heat sink capable of embedding semiconductor of electronic module of the present invention institute construction.
As shown in the figure, in embodiment 2, connect the heat sink 14 put on this substrate first surface 111 and be formed with the perforate 141 that runs through the surface taking in semiconductor chip 12 places, when at least one semiconductor chip 12 connects the electric connection pad of putting at this substrate first surface 111 113, can be accommodated in simultaneously in this heat sink perforate 141, and resin compound such as epoxy resin encapsulating materials such as (Epoxyresin) are inserted to the perforate 141 of this heat sink 14 by mold pressing (Molding) operation, to form potting resin 17, make this potting resin 17 envelope this semiconductor chip 12, avoid being subjected to extraneous aqueous vapor or pollutant to encroach on, and reduce between the structure of heat sink and substrate, and can borrow this potting resin increase heat transfer efficiency because of the thermal stress that thermal dilation difference produced.In addition, in this substrate 11, also can form a plurality of plating vias (PTH) 114 that run through, be stacked over circuit layer between insulating barrier for electric connection.Simultaneously, in preferable enforcement, can form a continuous protuberance 142 at these heat sink 14 bottom surface peripheries, with the overflow of effective obstruct potting resin 17.
The semi-conductor packaging heat spreader structure that is embedded into passive component of the present invention can be integrated at least one integrated circuit (IC) chip simultaneously, and can in semiconductor device, be embedded into driving component or passive component (capacitance component for example, resistor assembly and Inductive component or chip-shaped passive component) heat sink, so that promote the electrical functionality and the thermal diffusivity of this semiconductor device synchronously, simultaneously, be coupled to this semiconductor chip by this heat sink, the effective heat that produces in the loss semiconductor chip course of work, and can provide this chip screening effect (Shielding), in addition, the driving component of this semiconductor device or passive component all can be taken in and be embedded in the perforate or recess of this heat sink.Simultaneously, the present invention also can avoid directly settling in substrate in the existing operation operation that passive component caused loaded down with trivial details, and be when satisfying the electrical functionality of different designs demand, to need the increase of the redesign manufacturing cost that this substrate caused, the present invention has increased the flexibility of base plate line layout.
Claims (14)
1. a constructed configuration of heat sink capable of embedding semiconductor of electronic module is characterized in that, this semi-conductor packaging heat spreader structure comprises:
Heat sink, this heat sink surface is formed with a plurality of recesses; And
At least one electronic building brick, it is embedded in the part recess of this heat sink, and the recess of part can provide accommodation space to take in the driving component of semiconductor device.
2. constructed configuration of heat sink capable of embedding semiconductor of electronic module as claimed in claim 1 is characterized in that, this heat sink is formed with one at the driving component place of taking in semiconductor device and runs through perforate.
3. constructed configuration of heat sink capable of embedding semiconductor of electronic module as claimed in claim 1 or 2 is characterized in that, this heat sink bottom surface periphery is formed with continuous protuberance.
4. constructed configuration of heat sink capable of embedding semiconductor of electronic module as claimed in claim 1 is characterized in that, this electronic building brick is a kind of in driving component and the passive component.
5. constructed configuration of heat sink capable of embedding semiconductor of electronic module as claimed in claim 4 is characterized in that, this passive component is a kind of in resistor assembly, capacitance component, Inductive component and the chip-shaped passive component.
6. as claim 1 or 4 described constructed configuration of heat sink capable of embedding semiconductor of electronic modules, it is characterized in that this driving component is a semiconductor chip.
7. constructed configuration of heat sink capable of embedding semiconductor of electronic module as claimed in claim 4 is characterized in that, this passive component is to utilize fabrography and high temperature sintering program to be formed in this heat sink recess.
8. constructed configuration of heat sink capable of embedding semiconductor of electronic module as claimed in claim 4 is characterized in that, this passive component is to be installed in this heat sink recess by adhesive.
9. constructed configuration of heat sink capable of embedding semiconductor of electronic module as claimed in claim 1 is characterized in that, this heat sink adopts the material with high-termal conductivity and hardness to make.
10. constructed configuration of heat sink capable of embedding semiconductor of electronic module as claimed in claim 1 is characterized in that, this semiconductor device comprises:
Conductor package substrate has first surface and second surface;
At least one semiconductor chip and at least one electronic building brick, it connects puts and is electrically connected to this substrate first surface;
Heat sink, it connects and places this substrate first surface, and this heat sink surface is formed with a plurality of recesses for being embedded into this electronic building brick and taking in this semiconductor chip; And
A plurality of conductive components connect and place this substrate second surface, are electrically conducted to external device (ED) for this semiconductor device.
11. constructed configuration of heat sink capable of embedding semiconductor of electronic module as claimed in claim 10 is characterized in that, is formed with a plurality of metal couplings on the circuit face of this semiconductor chip, and this semiconductor chip is connect and puts and be electrically connected to this substrate to cover crystal type.
12. constructed configuration of heat sink capable of embedding semiconductor of electronic module as claimed in claim 10, it is characterized in that, this semiconductor chip is to connect by adhesive to put at this substrate first surface on its inverter circuit face, and is electrically connected to this substrate by the routing mode.
13. constructed configuration of heat sink capable of embedding semiconductor of electronic module as claimed in claim 10 is characterized in that, this conductive component is a kind of in soldered ball and the conductive pole.
14. constructed configuration of heat sink capable of embedding semiconductor of electronic module as claimed in claim 10 is characterized in that, this heat sink and this substrate mutual connection are mutually put between face and can be filled potting resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100063844A CN100343984C (en) | 2004-02-27 | 2004-02-27 | Constructed configuration of heat sink capable of embedding semiconductor of electronic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100063844A CN100343984C (en) | 2004-02-27 | 2004-02-27 | Constructed configuration of heat sink capable of embedding semiconductor of electronic module |
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| Publication Number | Publication Date |
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| CN1661797A true CN1661797A (en) | 2005-08-31 |
| CN100343984C CN100343984C (en) | 2007-10-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004100063844A Expired - Fee Related CN100343984C (en) | 2004-02-27 | 2004-02-27 | Constructed configuration of heat sink capable of embedding semiconductor of electronic module |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681542A (en) * | 2012-09-04 | 2014-03-26 | 英飞凌科技股份有限公司 | Chip package and a method for manufacturing a chip package |
| CN103681526A (en) * | 2012-09-21 | 2014-03-26 | Tdk株式会社 | Circuit board incorporating semiconductor ic and manufacturing method thereof |
| CN103871981A (en) * | 2012-12-13 | 2014-06-18 | 辉达公司 | Low-profile chip package with modified heat spreader |
| CN105700653A (en) * | 2016-04-15 | 2016-06-22 | 东莞市迅阳实业有限公司 | Heat expansion-type heat-sink device |
| CN110416192A (en) * | 2019-07-12 | 2019-11-05 | 南通沃特光电科技有限公司 | A kind of integrated circuit package structure and its packaging method with capacitance component |
| US11887940B2 (en) * | 2017-05-29 | 2024-01-30 | Intel Corporation | Integrated circuit packages with conductive element having cavities housing electrically connected embedded components |
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| US5371404A (en) * | 1993-02-04 | 1994-12-06 | Motorola, Inc. | Thermally conductive integrated circuit package with radio frequency shielding |
| JP3454888B2 (en) * | 1993-11-24 | 2003-10-06 | 富士通株式会社 | Electronic component unit and method of manufacturing the same |
| US5757620A (en) * | 1994-12-05 | 1998-05-26 | International Business Machines Corporation | Apparatus for cooling of chips using blind holes with customized depth |
| US5907474A (en) * | 1997-04-25 | 1999-05-25 | Advanced Micro Devices, Inc. | Low-profile heat transfer apparatus for a surface-mounted semiconductor device employing a ball grid array (BGA) device package |
| CN1417868A (en) * | 2001-10-29 | 2003-05-14 | 银河光电股份有限公司 | Multiple-chip package structure of LED chip |
| CN1476084A (en) * | 2002-08-13 | 2004-02-18 | 矽统科技股份有限公司 | Heat dissipation mould set |
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- 2004-02-27 CN CNB2004100063844A patent/CN100343984C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681542A (en) * | 2012-09-04 | 2014-03-26 | 英飞凌科技股份有限公司 | Chip package and a method for manufacturing a chip package |
| CN103681542B (en) * | 2012-09-04 | 2016-11-23 | 英飞凌科技股份有限公司 | Chip package and the method being used for making chip package |
| CN103681526A (en) * | 2012-09-21 | 2014-03-26 | Tdk株式会社 | Circuit board incorporating semiconductor ic and manufacturing method thereof |
| CN103681526B (en) * | 2012-09-21 | 2016-06-29 | Tdk株式会社 | The built-in substrate of semiconducter IC and manufacture method thereof |
| CN103871981A (en) * | 2012-12-13 | 2014-06-18 | 辉达公司 | Low-profile chip package with modified heat spreader |
| CN105700653A (en) * | 2016-04-15 | 2016-06-22 | 东莞市迅阳实业有限公司 | Heat expansion-type heat-sink device |
| US11887940B2 (en) * | 2017-05-29 | 2024-01-30 | Intel Corporation | Integrated circuit packages with conductive element having cavities housing electrically connected embedded components |
| CN110416192A (en) * | 2019-07-12 | 2019-11-05 | 南通沃特光电科技有限公司 | A kind of integrated circuit package structure and its packaging method with capacitance component |
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| CN100343984C (en) | 2007-10-17 |
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