CN1649181B - Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it - Google Patents
Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it Download PDFInfo
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- CN1649181B CN1649181B CN2005100048162A CN200510004816A CN1649181B CN 1649181 B CN1649181 B CN 1649181B CN 2005100048162 A CN2005100048162 A CN 2005100048162A CN 200510004816 A CN200510004816 A CN 200510004816A CN 1649181 B CN1649181 B CN 1649181B
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- nitride semiconductor
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- 239000000758 substrate Substances 0.000 title claims abstract description 132
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 111
- 239000004065 semiconductor Substances 0.000 title claims abstract description 110
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 47
- 230000012010 growth Effects 0.000 claims description 35
- 229910052594 sapphire Inorganic materials 0.000 claims description 18
- 239000010980 sapphire Substances 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 150000004678 hydrides Chemical class 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 96
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 20
- 239000007789 gas Substances 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000012159 carrier gas Substances 0.000 description 12
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 12
- 238000002425 crystallisation Methods 0.000 description 12
- 230000008025 crystallization Effects 0.000 description 11
- 229910021529 ammonia Inorganic materials 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 229910052736 halogen Inorganic materials 0.000 description 10
- 150000002367 halogens Chemical class 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000012797 qualification Methods 0.000 description 3
- 208000012868 Overgrowth Diseases 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- FLDSMVTWEZKONL-AWEZNQCLSA-N 5,5-dimethyl-N-[(3S)-5-methyl-4-oxo-2,3-dihydro-1,5-benzoxazepin-3-yl]-1,4,7,8-tetrahydrooxepino[4,5-c]pyrazole-3-carboxamide Chemical compound CC1(CC2=C(NN=C2C(=O)N[C@@H]2C(N(C3=C(OC2)C=CC=C3)C)=O)CCO1)C FLDSMVTWEZKONL-AWEZNQCLSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000002942 anti-growth Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
The sample sequence number | { the diffraction half range value (second) of 0002} face | Luminous output (mW) |
1? | 47? | 4.0? |
2? | 48? | 6.0? |
3? | 64? | 1.8? |
4? | 98? | 2.4? |
5? | 138? | 2.6? |
6? | 142? | 4.8? |
7? | 164? | 2.0? |
8? | 248? | 1.4? |
9? | 267? | 3.8? |
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-018884 | 2004-01-27 | ||
JP2004018884 | 2004-01-27 | ||
JP2004018884A JP4600641B2 (en) | 2004-01-27 | 2004-01-27 | Nitride semiconductor free-standing substrate and nitride semiconductor light emitting device using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1649181A CN1649181A (en) | 2005-08-03 |
CN1649181B true CN1649181B (en) | 2011-05-04 |
Family
ID=34792558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005100048162A Active CN1649181B (en) | 2004-01-27 | 2005-01-27 | Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it |
Country Status (3)
Country | Link |
---|---|
US (2) | US7641988B2 (en) |
JP (1) | JP4600641B2 (en) |
CN (1) | CN1649181B (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI455181B (en) | 2005-06-01 | 2014-10-01 | Univ California | Technique for the growth and fabrication of semipolar (ga,al,in,b)n thin films, heterostructures, and devices |
KR100638869B1 (en) * | 2005-06-21 | 2006-10-27 | 삼성전기주식회사 | Method of fabricating nitride type compound layer, gan substrate and vertical structure nitride type semiconductor light emitting device |
US7273798B2 (en) * | 2005-08-01 | 2007-09-25 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Gallium nitride device substrate containing a lattice parameter altering element |
JP5260831B2 (en) * | 2006-01-05 | 2013-08-14 | 古河機械金属株式会社 | Group III nitride semiconductor crystal manufacturing method, group III nitride semiconductor substrate manufacturing method, and semiconductor device manufacturing method |
KR100668351B1 (en) * | 2006-01-05 | 2007-01-12 | 삼성코닝 주식회사 | Nitride-based light emitting device and method of manufacturing the same |
KR100735311B1 (en) * | 2006-04-21 | 2007-07-04 | 삼성전기주식회사 | Light emitting diode chip |
TW200950128A (en) * | 2008-05-16 | 2009-12-01 | Yu-Nung Shen | Light-emitting diode chip packaging body and its packaging method |
WO2010020068A1 (en) * | 2008-08-19 | 2010-02-25 | Lattice Power (Jiangxi) Corporation | Semiconductor light-emitting devices for generating arbitrary color |
WO2010036622A1 (en) * | 2008-09-24 | 2010-04-01 | S.O.I. Tec Silicon On Insulator Technologies | Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same |
EP2345060B1 (en) | 2008-10-30 | 2013-12-04 | Soitec | Methods of forming layers of semiconductor material having reduced lattice strain and engineered substrates including same |
US8637383B2 (en) | 2010-12-23 | 2014-01-28 | Soitec | Strain relaxation using metal materials and related structures |
US9589792B2 (en) * | 2012-11-26 | 2017-03-07 | Soraa, Inc. | High quality group-III metal nitride crystals, methods of making, and methods of use |
CN103441192B (en) * | 2008-12-18 | 2016-06-08 | 陆普科技股份有限公司 | LED encapsulation body and method for packing thereof |
JP2013014450A (en) * | 2011-07-01 | 2013-01-24 | Hitachi Cable Ltd | Nitride semiconductor epitaxial substrate and nitride semiconductor device |
US9093395B2 (en) * | 2011-09-02 | 2015-07-28 | Avogy, Inc. | Method and system for local control of defect density in gallium nitride based electronics |
RU2653118C1 (en) * | 2014-08-29 | 2018-05-07 | Соко Кагаку Ко., Лтд. | Template for epitaxial growth, a method for producing it and a nitride semiconductor device |
JP6783063B2 (en) * | 2016-03-17 | 2020-11-11 | 株式会社サイオクス | Nitride semiconductor templates and nitride semiconductor laminates |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3184717B2 (en) | 1993-10-08 | 2001-07-09 | 三菱電線工業株式会社 | GaN single crystal and method for producing the same |
EP0647730B1 (en) * | 1993-10-08 | 2002-09-11 | Mitsubishi Cable Industries, Ltd. | GaN single crystal |
JP3876473B2 (en) * | 1996-06-04 | 2007-01-31 | 住友電気工業株式会社 | Nitride single crystal and manufacturing method thereof |
JP3304787B2 (en) * | 1996-09-08 | 2002-07-22 | 豊田合成株式会社 | Semiconductor light emitting device and method of manufacturing the same |
US6252261B1 (en) * | 1998-09-30 | 2001-06-26 | Nec Corporation | GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor |
US20020096674A1 (en) * | 1999-01-08 | 2002-07-25 | Cho Hak Dong | Nucleation layer growth and lift-up of process for GaN wafer |
US6372041B1 (en) * | 1999-01-08 | 2002-04-16 | Gan Semiconductor Inc. | Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis |
JP2002241198A (en) * | 2001-02-13 | 2002-08-28 | Hitachi Cable Ltd | GaN SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING THE SAME |
JP2002270516A (en) * | 2001-03-07 | 2002-09-20 | Nec Corp | Growing method of iii group nitride semiconductor, film thereof and semiconductor element using the same |
JP3631724B2 (en) * | 2001-03-27 | 2005-03-23 | 日本電気株式会社 | Group III nitride semiconductor substrate and manufacturing method thereof |
US6936357B2 (en) * | 2001-07-06 | 2005-08-30 | Technologies And Devices International, Inc. | Bulk GaN and ALGaN single crystals |
-
2004
- 2004-01-27 JP JP2004018884A patent/JP4600641B2/en not_active Expired - Lifetime
- 2004-04-12 US US10/821,957 patent/US7641988B2/en not_active Expired - Lifetime
-
2005
- 2005-01-27 CN CN2005100048162A patent/CN1649181B/en active Active
-
2008
- 2008-05-01 US US12/113,603 patent/US20080246054A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2005213063A (en) | 2005-08-11 |
US20080246054A1 (en) | 2008-10-09 |
JP4600641B2 (en) | 2010-12-15 |
US7641988B2 (en) | 2010-01-05 |
CN1649181A (en) | 2005-08-03 |
US20050161772A1 (en) | 2005-07-28 |
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