CN103441192B - LED encapsulation body and method for packing thereof - Google Patents
LED encapsulation body and method for packing thereof Download PDFInfo
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- CN103441192B CN103441192B CN201310189027.5A CN201310189027A CN103441192B CN 103441192 B CN103441192 B CN 103441192B CN 201310189027 A CN201310189027 A CN 201310189027A CN 103441192 B CN103441192 B CN 103441192B
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- light
- electrode
- led encapsulation
- encapsulation body
- backlight unit
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Abstract
The present invention relates to a kind of LED encapsulation body, including: pair of electrodes pin, and a light-emitting diode chip for backlight unit, this light-emitting diode chip for backlight unit has the first electrode side surface and the second electrode side surface, first electrode side surface is provided with the first electrode, second electrode side surface is provided with the second electrode, first electrode and the second electrode have different conductivity-type, electrode pin is supported by this by this light-emitting diode chip for backlight unit when the electrode of its first and second electrode side surface is with the contact electrical contact of corresponding electrode pin, the electrode side surface of this light-emitting diode chip for backlight unit is coated with diamond film, therefore, heat can be conducted off lens interior from electrode pin effectively via diamond film.
Description
The application is application number to be 200810185991.X, the applying date be December in 2008 18 days, denomination of invention is the divisional application of the Chinese patent application of " LED encapsulation body and method for packing thereof ".
Technical field
The present invention relates to a kind of LED encapsulation body and light emitting module, more specifically it relates to the LED encapsulation body that a kind of heat dispersion is good and production cost reduces and light emitting module.
Background technology
Figure 19 show the diagrammatic side view of a kind of existing LED encapsulation body. Figure 20 show the schematic diagram of the light-emitting diode chip for backlight unit of display phase co-wavelength and same brightness specification distribution after packaging.
Consulting shown in Figure 19, described existing LED encapsulation body includes a light-emitting diode chip for backlight unit being positioned on lead frame 90 91 and the lens 92 being formed on described lead frame 90 and can cover described light-emitting diode chip for backlight unit 91.
The electrode (not shown) of described light-emitting diode chip for backlight unit 91 is to electrically connect via the electrode pin 900 that wire 93 is corresponding with described lead frame 90.
It should be noted that be formed with phosphor powder layer 94 on the electrode side surface of described light-emitting diode chip for backlight unit 91. The formation of described phosphor powder layer 94 comprises the steps: to coat on the electrode side surface of described light-emitting diode chip for backlight unit 91 by liquid fluorescent bisque material; And make described liquid fluorescent bisque hardened material to form described phosphor powder layer 94 with baking process. But, the formation of current described phosphor powder layer 94 has the drawback that
1, liquid fluorescent bisque material in uneven thickness will to all the winds flow before baking hardening, therefore, form the phosphor powder layer 94 on each light-emitting diode chip for backlight unit 91 different on thickness.
2, area differs with the 1st in like manner, and forming the phosphor powder layer 94 on each light-emitting diode chip for backlight unit 91 also can be therefore different on area.
3, shape differs with the 1st in like manner, and forming the phosphor powder layer 94 on each light-emitting diode chip for backlight unit 91 in shape also can be therefore different.
4, relative offset and the 1st are in like manner, and the relative position forming phosphor powder layer 94 on each light-emitting diode chip for backlight unit 91 and corresponding light-emitting diode chip for backlight unit 91 can be therefore different.
Due to disadvantage mentioned above, the light-emitting diode chip for backlight unit that will cause phase co-wavelength and same brightness originally becomes multiple color temperatures difference, the different LED encapsulation body different with wavelength of brightness after encapsulation, that is, so-called defective products (sidebins). Consulting shown in Figure 20, the specification produced because of the problems referred to above is distributed as shown in the figure. It should be noted, the light-emitting diode chip for backlight unit originally belonging to same specification (bin) can be divided into 128 specifications after encapsulation, but, general by the scope used only middle about 60%, therefore, the LED encapsulation body being equivalent to 40% after encapsulation can become defective products, therefore causes that production cost increases.
On the other hand, owing to the sectional area of wire 93 is too little, the heat therefore produced by described light-emitting diode chip for backlight unit 91 is difficult to conduct out via the electrode pin 900 of lead frame 90, and then affects the usefulness of LED encapsulation body.
Summary of the invention
It is an object of the invention to provide a kind of LED encapsulation body and method for packing thereof.
A feature according to the present invention, it is provided that a kind of LED encapsulation body, comprising: a light-emitting diode chip for backlight unit, it has an electrode side surface and at least two is installed on the electrode on described electrode side surface; One electrode side insulation layer, it is formed on the electrode side surface of described light-emitting diode chip for backlight unit and is formed with multiple through hole corresponding to described electrode; It is formed at the high heat transfer heat dissipating layer in each through hole of described electrode side insulation layer; And it is formed at the high heat transfer metal level on each high efficiency and heat radiation layer.
According to another characteristic of the invention, provide the method for packing of a kind of LED encapsulation body, it comprises the steps: to prepare a piece of LED wafer, described LED wafer has multiple light-emitting diode chip for backlight unit, each light-emitting diode chip for backlight unit has a primary light-emitting surface, and the primary light-emitting surface of the plurality of light-emitting diode chip for backlight unit is equivalent to the primary light-emitting surface of described LED wafer; The primary light-emitting surface of described LED wafer is formed a light-emitting area insulating barrier; Described light-emitting area insulating barrier is formed multiple through holes of each primary light-emitting surface arriving corresponding light-emitting diode chip for backlight unit; And in the plurality of through hole, form phosphor powder layer; Thus, the phosphor powder layer of all light-emitting diode chip for backlight unit is respectively provided with same thickness, equal area and same shape, and the relative position formed between phosphor powder layer and the corresponding light-emitting diode chip for backlight unit on the primary light-emitting surface of each light-emitting diode chip for backlight unit immobilizes.
According to a further feature of the present disclosure, it is provided that a kind of LED encapsulation body, comprising: pair of electrodes pin, and a light-emitting diode chip for backlight unit, described light-emitting diode chip for backlight unit has the first electrode side surface and the second electrode side surface, described first electrode side surface is provided with the first electrode, described second electrode side surface is provided with the second electrode, described first electrode and described second electrode have different conductivity-type, electrode pin is supported by this by described light-emitting diode chip for backlight unit when the electrode of its first electrode side surface and the second electrode side surface is with the contact electrical contact of corresponding electrode pin, described first electrode side surface and described second electrode side surface of described light-emitting diode chip for backlight unit are coated with diamond film, therefore, heat can be conducted off inside described light-emitting diode chip for backlight unit from electrode pin effectively via described diamond film.
Another feature according to the present invention, it is provided that a kind of light emitting module, comprising: a luminescence component, described luminescence component includes elongated printed circuit board (PCB), is provided with multiple LED encapsulation body in flip mode on the printed circuit board;And a leaded light component, described leaded light component includes one and installs diffuser plate on the printed circuit board, multiple is suitable to the accommodating accommodating depressed part installing corresponding LED encapsulation body on the printed circuit board at described diffuser plate towards being formed with on the surface of described printed circuit board (PCB).
Accompanying drawing explanation
Fig. 1 show the schematic sectional view of the LED encapsulation body of first preferred embodiment of the invention;
Fig. 2 to Fig. 3 show the schematic sectional view of the method for manufacturing LED encapsulation body shown in FIG;
Fig. 4 show the schematic sectional view of the LED encapsulation body of second preferred embodiment of the invention;
Fig. 5 to 7 show the schematic sectional view of the method for manufacturing LED encapsulation body shown in the diagram;
Fig. 8 and 9 show the schematic diagram of state that each interlayer hole exposes the primary light-emitting surface of two or more LED chip;
Figure 10 show the schematic sectional view of the change of the LED encapsulation body of second preferred embodiment of the present invention;
Figure 11 show the schematic sectional view of the change of the LED encapsulation body of second preferred embodiment of the invention;
Figure 12 (A) and 12 (B) show the schematic diagram of the LED encapsulation body of third preferred embodiment of the invention;
Figure 13 (A) and 13 (B) show the schematic diagram of the change of the LED encapsulation body of third preferred embodiment of the invention;
Figure 14 to 16 show the schematic diagram of the backlight module of the LED encapsulation body using the present invention;
Figure 17 show the schematic sectional view of the change of the LED encapsulation body of second preferred embodiment of the invention;
Figure 18 show the schematic diagram of the backlight module of LED encapsulation body shown in fig. 17;
Figure 19 show the schematic diagram of existing LED encapsulation body;
Figure 20 show the schematic diagram of the light-emitting diode chip for backlight unit of phase co-wavelength and same brightness specification distribution after packaging;
Figure 21 show the schematic diagram of the LED encapsulation body of four preferred embodiment of the invention; And
Figure 22 show the schematic sectional view of the change of second preferred embodiment of the present invention.
Detailed description of the invention
In the detailed description of present invention below preferred embodiment, same or similar assembly is indicated by identical label, and their detailed description will be omitted. Additionally, in order to know announcement inventive feature, the assembly in accompanying drawing is not pressed actual ratio and is described.
Fig. 1 show the schematic sectional view of the LED encapsulation body of first preferred embodiment of the invention, and Fig. 2 to 3 show the schematic sectional view of the method illustrating the LED encapsulation body shown in manufacturing in FIG in way of flowchart.
At Fig. 1 to, as shown in 3, the electrode side surface W10 of a LED wafer W with multiple light-emitting diode chip for backlight unit 1 being formed with an electrode side insulation layer 2. Described electrode side insulation layer 2 is formed with the through hole 20 of the electrode 11 of the corresponding light-emitting diode chip for backlight unit 1 exposing described LED wafer W. A high heat transfer heat dissipating layer being formed on described electrode side surface 10 30 and a high heat transfer metal level 31 being formed on described high heat transfer heat dissipating layer 30 it is sequentially formed with in each through hole 20.
In the present embodiment, described high heat transfer heat dissipating layer 30 is formed by the material of such as pyrolytic graphite Yu the coefficient of heat conduction with 400W/ (m K) to 700W/ (m K) of strong solution graphite, or is formed by the material of the coefficient of heat conduction with 900W/ (m K) to 1200W/ (m K) of such as diamond ink.On the other hand, described high heat transfer metal level 31 can be formed by nickel dam and layer gold or aluminium lamination and layers of copper, as shown in Figure 11. Or, described metal level 31 can be formed by layers of copper. Or, described metal level 31 can be formed by any applicable metal level or alloy-layer, such as Al, AlN3��Cu��BN3Deng.
Then, multiple each along the corresponding line of cut CL grooves 13 extended formed LED wafer W with on described primary light-emitting surface W12 relative for electrode side surface W10.
Then, as shown in FIG. 3, phosphor powder layer 41 and protective layer 42 are sequentially formed on the surface W12 of described LED wafer W.
Then, as, shown in Fig. 1, after experience cutting processing procedure, obtained the LED encapsulation body of first embodiment of the invention. Owing to the side surface of described light-emitting diode chip for backlight unit 1 is also mostly covered by phosphor powder layer 41, described in advantage of this embodiment is that the color that can more effectively reduce the light sent by described LED encapsulation body changes because of the impact of sidelight.
Fig. 4 show the schematic sectional view of the LED encapsulation body of second preferred embodiment of the invention, and Fig. 5 to Fig. 7 show the schematic sectional view of the method illustrating the LED encapsulation body shown in manufacturing in the diagram in way of flowchart.
It should be noted that owing to the electrode side insulation layer 2 on the electrode side surface W10 of LED wafer W, high heat transfer heat dissipating layer 30 and the formation of high heat transfer metal level 31 are identical with first embodiment, their detailed description will be omitted.
Consult shown in Fig. 4 to Fig. 7, the primary light-emitting surface W12 of described LED wafer W is formed a light-emitting area side insulation layer 4. Described light-emitting area side insulation layer 4 is formed with the perforation 40 of the primary light-emitting surface 12 (W12) of multiple light-emitting diode chip for backlight unit 1 leading to correspondence. A phosphor powder layer 41 it is formed with in each perforation 40.
Then, a protective clear layer 42 is formed on the surface of described insulating barrier 4 and phosphor powder layer 41. Then, as, shown in Fig. 4, after experience cutting processing procedure, obtained the LED encapsulation body of second embodiment of the invention.
In the above description, although each through hole 40 exposes the primary light-emitting surface 12 of a chip to the open air. But, each through hole 40 also can expose two or more chips 1. That is, each through hole 40 exposes 2x2,3x3,4x4,5x5 ... etc. chip 1 also dependent on needs, as shown in figs. 8 and 9.
The LED encapsulation body made by the method for the present invention has equal area A due to the phosphor powder layer 41 of each light-emitting diode chip for backlight unit1,A2,A3,��.,An(see Fig. 5) and equal thickness D1,D2,D3,��..,DnSeeing (Fig. 7), therefore, fluorescent material, after LED is blue-light excited, obtains identical colour temperature and same brightness, will not have the defective products (sidebins) of more than 40% after causing LED encapsulation because of dot fluorescent powder. And, the phosphor powder layer 41 being formed on the light-emitting area 12 of each light-emitting diode chip for backlight unit 1 will not offset with the relative position of corresponding light-emitting diode chip for backlight unit 1, and shape is without difference, it is possible to the shortcoming effectively eliminating existing LED encapsulation body.
Additionally, the height of the phosphor powder layer 41 of the present invention is controlled by the height of insulating barrier 4, therefore can suitably control with the range of error of actually required height.
Consult shown in Figure 10, each metal level 31 still alternatively forms stannum ball 32.
In this way, due to the high heat-conduction coefficient of described high heat transfer heat dissipating layer 30 and described high heat transfer metal level 31, described light-emitting diode chip for backlight unit 1 heat produced can be conducted off quickly and effectively.
Figure 12 (A) and Figure 12 (B) show the diagrammatic side view of the LED encapsulation body of another embodiment of the present invention.
Consult shown in Figure 12 (A) and Figure 12 (B), described LED encapsulation body includes pair of electrodes pin 51,52, by the light-emitting diode chip for backlight unit 1 of the pair of electrode pin 51,52 support, it is coated with the phosphor powder layer 6 of described light-emitting diode chip for backlight unit 1, reflector 7 and lens 8.
Described light-emitting diode chip for backlight unit 1 has the first electrode side surface 13 and the second electrode side surface 14. Described first electrode side surface 13 is provided with the first electrode 130. Described second electrode side surface 14 is provided with the second electrode 140. Described first electrode and described second electrode have different conductivity-type. Described light-emitting diode chip for backlight unit 1 is supported by the pair of electrode pin 51,52 when the electrode 130 and 140 of its first and second electrode side surface 13 and 14 electrically contacts with the contact of corresponding electrode pin 51,52. The electrode side surface 13,14 of described light-emitting diode chip for backlight unit 1 is coated with diamond film 15. Therefore, heat can be conducted off described lens 8 inside from electrode pin 51,52 effectively via described diamond film.
Consulting shown in Figure 13 (A) and Figure 13 (B), it illustrates the modification of LED encapsulation body of Figure 12 (A). This modification and the LED encapsulation body shown in Figure 12 (A) are different in that in this modification, are further coated with layer of fluorescent powder layer 16 so that the phosphor powder layer 6 shown in Figure 12 (A) can omit on diamond film 15.
Figure 14 show the schematical sections exploded view of light emitting module, and Figure 15 show the signal constitutional diagram of light emitting module of Figure 14.
Consulting shown in Figure 14, described light emitting module includes a luminescence component and a leaded light component. Described luminescence component includes elongated printed circuit board (PCB) 100. On described printed circuit board (PCB) 100, in flip mode, multiple LED encapsulation body 200 is installed. The primary light-emitting surface of each LED encapsulation body 200 is coated with phosphor powder layer 201. Described printed circuit board (PCB) 100 is formed multiple inverted T-shaped perforation 101 separated at equal intervals in the longitudinal direction of described printed circuit board (PCB) 100.
Described leaded light component includes diffuser plate 300. At described diffuser plate 300 towards the snap fit 302 being formed with multiple accommodating depressed part 301 being suitable to the accommodating corresponding LED encapsulation body 200 being arranged on described printed circuit board (PCB) 100 and multiple corresponding perforation 101 being adapted to extend to described printed circuit board (PCB) 100 on the surface of described printed circuit board (PCB) 100.
As shown in Figure 15, when the snap fit 302 of described diffuser plate 300 is fastened in the corresponding perforation 101 of described printed circuit board (PCB) 100, the LED encapsulation body 200 being arranged on described printed circuit board (PCB) 100 is contained in the corresponding depressed part 301 of described diffuser plate 300, and the light launched by these LED encapsulation bodies 200 is spread out by described diffuser plate 300.
It should be noted that can coating phosphor powder layer 303 (see Figure 16) on the inner surface of each depressed part 301. Thus, the phosphor powder layer on LED encapsulation body 200 can be omitted. Or, phosphor powder layer 303 can exist with the phosphor powder layer on LED encapsulation body 200 simultaneously, thus can improve LED encapsulation body 200 sidelight shortcoming without excitated fluorescent powder.
Shown in Figure 17, different from the second embodiment, the LED encapsulation body of the present embodiment is formed without light-emitting area side insulation layer on the primary light-emitting surface 12 of light-emitting diode chip for backlight unit 1, and described phosphor powder layer 41 is formed directly on the primary light-emitting surface 12 of described light-emitting diode chip for backlight unit 1.
Figure 18 show the schematic isometric of the backlight module being used in the LED encapsulation body shown in Figure 17.
As shown in Figure 18, described backlight module includes printed circuit board (PCB) 100, multiple LED encapsulation body 200 and multiple lid 400 doped with fluorescent material. These LED encapsulation bodies 200 as shown in Figure 17 are electrically arranged on described printed circuit board (PCB) 100. Each lid 400 is formed with a horn-like perforation 401, and is arranged on described printed circuit board (PCB) 100 so that each LED encapsulation body 200 is positioned at the perforation 401 of the lid 400 of correspondence near the aperture of the tool smaller aperture due of described perforation 401. Thus, any blue ray sent from described packaging body 200 side can become white light after the fluorescent material with lid 400 excites, and therefore blue sidelight problem can solve further.
Consulting shown in Figure 21, a LED chip 1 is electrically installed on matrix S. Described LED chip 1 has a first surface 10 being formed with the first electrode 12 and a second surface 11 being formed with the second electrode (not shown). Described LED chip 1 is arranged on the installation surface 20 of described matrix S via a conductor layer 3 so that the second electrode of described LED chip 1 is connected electrically to the corresponding electric terminal (not shown) installing on surface 20 at described matrix S.
Described conductor layer 3 includes one and is formed at the layers of copper 32, installed on surface 20 of described matrix S layer gold 31 in described layers of copper 32 and a weld layer 30 in described layer gold 31.
Described layers of copper 32 is connected to the installation surface 20 of described matrix S by method of laser welding (LaserWeldingMethod) or supercritical ultrasonics technology (UltrasonicMethod).
Described layer gold 31 is connected to described layers of copper 32 by method of laser welding.
Described solder layer 30 is connected to described layer gold 31 by reflow method.
First electrode 12 of described LED chip 1 is electrically connected to the conductive junction point 21 installed on surface 20 at described matrix S. Each conductive junction point 21 includes the layers of copper 212, formed on the installation surface 20 of described matrix S layer gold 211 in described layers of copper 212 and a solder layer 210 in described layer gold 211.
Consulting shown in Figure 22, different from the first embodiment of the present invention, described high heat conductor metal level 31 includes a layers of copper 310 being formed on the height heat dissipating layer 30 formed by thermal decomposition graphite. Described height heat dissipating layer 30 can be formed by sputtering method with described layers of copper 310. It should be noted that the removal of the part of described height heat dissipating layer 30 and described high heat conductor metal level 31 can be reached by CMP (cmp) processing procedure.
Described metal level 31 also includes an Au layer 311 in described layers of copper 310 and a solder layer 312 on described Au layer 311.
Claims (5)
1. a LED encapsulation body, it is characterised in that including:
Pair of electrodes pin; And
One light-emitting diode chip for backlight unit, described light-emitting diode chip for backlight unit has the first electrode side surface and the second electrode side surface, described first electrode side surface is provided with the first electrode, described second electrode side surface is provided with the second electrode, described first electrode and described second electrode have different conductivity-type, electrode pin is supported by this by described light-emitting diode chip for backlight unit when the electrode of its first electrode side surface and the second electrode side surface is with the contact electrical contact of corresponding electrode pin, described first electrode side surface and described second electrode side surface of described light-emitting diode chip for backlight unit are coated with diamond film, therefore, heat can be conducted off inside described light-emitting diode chip for backlight unit from electrode pin effectively via described diamond film.
2. LED encapsulation body as claimed in claim 1, it is characterised in that described diamond film has the coefficient of heat conduction of 900W/ (m K) to 1200W/ (m K).
3. a light emitting module, it is characterised in that including:
One luminescence component, described luminescence component includes elongated printed circuit board (PCB), is provided with multiple LED encapsulation body as claimed in claim 1 or 2 in flip mode on the printed circuit board; And
One leaded light component, described leaded light component includes a diffuser plate being installed on described printed circuit board (PCB), multiple is suitable to the accommodating accommodating depressed part installing corresponding LED encapsulation body on the printed circuit board at described diffuser plate towards being formed with on the surface of described printed circuit board (PCB).
4. light emitting module as claimed in claim 3, it is characterised in that be formed with phosphor powder layer at least one in the inner surface of each depressed part and the primary light-emitting surface of each LED encapsulation body of described diffuser plate.
5. light emitting module as claimed in claim 3, it is characterized in that in described printed circuit board (PCB), be formed with multiple inverted T-shaped perforation separated at equal intervals in the longitudinal direction of described printed circuit board (PCB), and wherein, described diffuser plate also has the snap fit of multiple corresponding perforation being adapted to extend to described printed circuit board (PCB), therefore when the snap fit of described diffuser plate is fastened in the corresponding perforation of described printed circuit board (PCB), LED encapsulation body on the printed circuit board is installed and is contained in the corresponding depressed part of described diffuser plate, and the light launched by the plurality of LED encapsulation body as claimed in claim 1 or 2 is spread out by described diffuser plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310189027.5A CN103441192B (en) | 2008-12-18 | 2008-12-18 | LED encapsulation body and method for packing thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310189027.5A CN103441192B (en) | 2008-12-18 | 2008-12-18 | LED encapsulation body and method for packing thereof |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810185991XA Division CN101752474B (en) | 2008-12-18 | 2008-12-18 | LED encapsulating body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103441192A CN103441192A (en) | 2013-12-11 |
| CN103441192B true CN103441192B (en) | 2016-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310189027.5A Expired - Fee Related CN103441192B (en) | 2008-12-18 | 2008-12-18 | LED encapsulation body and method for packing thereof |
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| CN (1) | CN103441192B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4476620A (en) * | 1979-10-19 | 1984-10-16 | Matsushita Electric Industrial Co., Ltd. | Method of making a gallium nitride light-emitting diode |
| CN101290958A (en) * | 2007-04-20 | 2008-10-22 | 亿光电子工业股份有限公司 | Encapsulation construction of light emitting diode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4600641B2 (en) * | 2004-01-27 | 2010-12-15 | 日立電線株式会社 | Nitride semiconductor free-standing substrate and nitride semiconductor light emitting device using the same |
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2008
- 2008-12-18 CN CN201310189027.5A patent/CN103441192B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4476620A (en) * | 1979-10-19 | 1984-10-16 | Matsushita Electric Industrial Co., Ltd. | Method of making a gallium nitride light-emitting diode |
| CN101290958A (en) * | 2007-04-20 | 2008-10-22 | 亿光电子工业股份有限公司 | Encapsulation construction of light emitting diode |
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| Publication number | Publication date |
|---|---|
| CN103441192A (en) | 2013-12-11 |
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