CN1645224A - Manufacture of pixel electrode contacting point of thin-membrane transistor liquid crystal displaying device - Google Patents
Manufacture of pixel electrode contacting point of thin-membrane transistor liquid crystal displaying device Download PDFInfo
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- CN1645224A CN1645224A CN 200510004795 CN200510004795A CN1645224A CN 1645224 A CN1645224 A CN 1645224A CN 200510004795 CN200510004795 CN 200510004795 CN 200510004795 A CN200510004795 A CN 200510004795A CN 1645224 A CN1645224 A CN 1645224A
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Abstract
A method for preparing contact of picture element electrode includes providing transparent backing with insulation layer, forming the first metal layer and the second one on insulation layer, removing out the second metal layer in contact area by half-tone cover and etching process and forming source and drain electrode, forming protective layer on the second metal layer and picture element electrode layer no protective layer for making the first metal layer contact to picture element electrode in contact area.
Description
Technical field
The present invention relates to a kind of manufacture method and structure of pixel electrode contacting point of LCD, refer to a kind of manufacture method and structure that is applicable to the pixel electrode contacting point of Thin Film Transistor-LCD especially.
Background technology
In the manufacturing of liquid crystal display panel of thin film transistor, because lithographic process is very expensive, therefore existing people is reduced to required light shield number the processing procedure of four～five road lithography steps as much as possible at present.Yet under the processing procedure that reduces lithography step, regular meeting produces defective on the contacting points position of pixel electrode and drain conductors, and is unfavorable for being described in detail as follows the work of display.
The circuit structure of general single pixel region as shown in Figure 1, comprise transistor 1, pixel electrode 2, with storage capacitors (storage capacitor) 3, and be perpendicular to one another a staggered signal wire (indicating Vs among the figure) and a sweep trace (indicating Vg among the figure), messenger line (indicating Vcs among the figure) is altogether arranged in addition, and itself and sweep trace are arranged in parallel with each other; Wherein the source electrode of thin film transistor (TFT) 1, grid and drain electrode link to each other with signal wire, sweep trace and pixel electrode respectively, and drain electrode links to each other with the top electrode that is positioned at storage capacitors 3; When thin film transistor (TFT) 1 is opened, the signal that signal wire transmitted not only can directly be sent to pixel electrode 2 and utilize, also can be sent in the storage capacitors 3 and store, before making the thin film transistor (TFT) 1 of sweep trace unlatching next time, pixel electrode 2 still can be kept the electric charge of a specified quantitative, produces and make panel not have bright spot.
Yet in the manufacturing process of known display, transistor area is shown in Fig. 2 a, on a glass substrate 20, form gate metal layer 10, on gate metal layer 10, form gate insulator 30 again, this moment, the amorphous silicon layer 50a and the semiconductor ohmic contact layer 50b of one patterned were formed on the gate insulator 30, again form the source electrode and the drain conductors metal level of one patterned thereafter, wherein, this source electrode and drain conductors metal level are formed jointly by titanium coating 40b and aluminum metal layer 40a, and titanium coating 40b is folded between aluminum metal layer 40a and the semiconductor ohmic contact layer 50b; Form second insulation course 70 and organic resin layer 80 at last, again pixel electrode 90 is covered on the organic resin layer 80, promptly finish the making of one of them panel of display.
At the same time, the pixel electrode contacting point zone please refer to shown in Fig. 2 b, the gate metal layer 10 that forms on the glass substrate 20 is the lower electrode plate as storage capacitors in this zone, and amorphous silicon layer 50a and semiconductor ohmic contact layer 50b are removed in this zone fully, in addition, pixel electrode 90 is by being positioned at second insulation course 70 and organic resin 80 contact hole 60 layer by layer, and direct and aluminum metal layer 40a comes in contact.Titanium coating 40b that this is regional and aluminum metal layer 40a be jointly as the electric pole plate of storage capacitors, and be to be extended by the drain conductors of thin film transistor (TFT).Because the material of pixel electrode 90 is selected from indium oxide (ITO), and the contact point of ITO and aluminum metal layer 40a can produce electrochemical reaction, causes the too high in resistance of contact point easily, and influence the normal voltage driving of liquid crystal.
Use always at present and address the above problem mode shown in Fig. 3 a and 3b, wherein Fig. 3 b is the sectional view along the A-A ' line of Fig. 3 a.In this display, transistorized making and Fig. 2 a are identical, but in the pixel electrode contact area, the cushion when adding amorphous silicon layer 50a and semiconductor ohmic contact layer 50b as etching formation contact hole 60 (the dotted line 60a inboard among Fig. 3 a).Owing to can etching remove amorphous silicon layer 50a and the semiconductor ohmic contact layer 50b that part is positioned at the pixel electrode contact area during etching contact hole 60, ITO can directly contact with gate insulator 30, and since aluminum metal cross cut at the end (undercut) that etching caused, so the lateral section of ITO mainly contacts with titanium coating 40b.
In more detail, when being formed on the gate insulator 30 as the amorphous silicon layer 50a of the passage of thin film transistor (TFT) and semiconductor ohmic contact layer 50b, in 50 inside of the square frame shown in Fig. 3 a in the pixel electrode contacting point zone, the amorphous silicon layer 50a and the semiconductor ohmic contact layer 50b that can keep rectangle, subsequently in 40 the oblique line subregion shown in Fig. 3 a, form the titanium coating 40b and the aluminum metal layer 40a of one patterned, then cover second insulation course 70 and organic resin layer 80, at last the dotted line 60a that is indicated among Fig. 3 a is carried out etching, form contact point hole 60.In this etch process; because (not being shown among the figure) can form other contact point windows in other zones; for example be etched to exposed gate metal layer 10 or scan signal line etc. simultaneously in other zones; contact point window as connecting grid lead and scan signal line can expose to guarantee gate metal layer 10 so etching can comprise etching (over-etch) usually.If in the pixel electrode contacting point zone, keep amorphous silicon layer 50a and semiconductor Ohmic contact point layer 50b, can prevent that gate insulator 30 from becoming thin because of crossing etching.In the pixel electrode contacting point zone, Bao gate insulator 30 can cause drain conductors to the electric leakage between the lower electrode plate of storage capacitors excessively, and makes storage capacitors forfeiture Charge Storage function.Yet gate insulator 30 is formed with chemical vapour deposition technique by silicon nitride usually, therefore generally when crossing etching, though there is the cushion of amorphous silicon layer 50a and semiconductor ohmic contact layer 50b, still can form projection and cause electric leakage, make storage capacitors forfeiture Charge Storage function on gate insulator 30 surfaces.
Summary of the invention
Utilize the Thin Film Transistor-LCD that method for making produced of pixel electrode contacting point of the present invention, can be under the situation that does not increase the light shield number, reduce the resistance of pixel electrode contacting point, and under the situation of the source electrode of not changing thin film transistor (TFT) and drain conductors material, reduce the resistance between drain conductors and pixel electrode contacting point, make storage capacitors except that reducing electrical leakage quantity, more can promote capacitance, and then reach high zero bright spot rate.
The method for making of the pixel electrode contacting point of a kind of Thin Film Transistor-LCD of the present invention comprises: provide a surface to have the transparent substrates of first insulation course; Form the first metal layer and second metal level on insulation course, wherein the first metal layer is between second metal level and first insulation course; Utilize a shadow tone light shield processing procedure (halftone photolithography) on second metal level, to form a photoresist layer, through in a pixel electrode contacting point zone, removing second metal level behind the etch process and staying the first metal layer with pattern; On second metal level, form second insulation course of an one patterned; And on second insulation course, form a transparent pixels electrode, the first metal layer in the pixel electrode contacting point zone is contacted with the transparent pixels electrode.
The present invention also provides a kind of pixel electrode contacting point of Thin Film Transistor-LCD, and it comprises: a surface has the transparent substrates of the 3rd metal level, first insulation course; plain conductor with pattern; a protective seam, a contact hole, and a transparent pixels electrode.Wherein have the 3rd metal level on the transparent substrates,, cover this first insulation course on the 3rd metal level and this transparent substrates, and be formed with first metal and second metal on this first insulation course with as the 3rd metal level.Wherein this first metal is between this second metal level and first insulation course, and this second metal level has an opening with respect to the top of the 3rd metal level, to expose this first metal layer.This protective seam is positioned at this first metal layer and this second metal level top, and this protective seam has second a siliceous insulation course and an organic resin layer.Wherein this second insulation course is covered in this first metal layer and this second metal top, between this first insulation course and this organic resin interlayer.Be positioned at the contact hole of this second metal level top, pass this protective seam, expose this first metal layer by this contact hole.This transparent pixels electrode is formed on this protective seam, and extends the first metal layer electric connection of this contact hole and this plain conductor.
In the pixel electrode contacting point structure and method for making of Thin Film Transistor-LCD of the present invention, preferably between first insulation course and transparent substrates, comprise the 3rd metal level with pattern; And in the LCD of the present invention the grid of thin film transistor (TFT) preferably thus the 3rd metal level form.In addition, the source/drain polar conductor of thin film transistor (TFT) preferably is made up of the first metal layer and second metal level, but is not limited to only use two metal layers.The material of the first metal layer and second metal level is also unrestricted, only need the first metal layer and pixel electrode not to produce electrochemical reaction and to improve resistance value person all applicable, in existing technology, the first metal layer is generally titanium, second metal level is generally aluminum metal, and the transparent pixels electrode is generally indium oxide (ITO), and is lower compared to indium zinc oxide (IZO) cost because of it.
In the pixel electrode contacting point structure and method for making of Thin Film Transistor-LCD of the present invention, shadow tone light shield processing procedure use one has the light shield of first, second portion and third part light transmittance, wherein the light transmittance of first is arranged in the photoresistance in pixel electrode contacting point zone in order to exposure between second portion and third part.And when the material of photoresist layer be positive photoresistance, then the first of light shield is preferably that semi transparent material, second portion are preferably light-proof material, third part is preferably light transmissive material and constitutes.In the pixel electrode contacting point structure and method for making of Thin Film Transistor-LCD of the present invention, first, second portion and third part corresponding to light shield, photoresist layer has first thickness, second thickness and the 3rd thickness respectively, wherein first thickness is arranged in the pixel electrode contacting point zone, second thickness is thick than first thickness in addition, and the 3rd thickness is than first thin thickness; And second thickness generally is positioned at the source electrode and the drain conductors zone of thin film transistor (TFT).
In the method for making of the pixel electrode contacting point of Thin Film Transistor-LCD of the present invention, the method and the indefinite of etching second metal level and the first metal layer, but must make under first thickness area of photoresist layer and expose the first metal layer, preferred down second metal level and the first metal layer of keeping of second thickness area of photoresist layer, second metal level that is positioned at the 3rd thickness area below of photoresist layer is preferably removed with first wet etching, the first metal layer that is positioned at the 3rd thickness below of photoresist layer is preferably removed with first dry ecthing, more preferably removes the photoresistance of first thickness area of photoresist layer simultaneously; And second metal level that is positioned at first thickness area below of photoresist layer is preferably removed with second wet etching.
In the method for making of the pixel electrode contacting point of Thin Film Transistor-LCD of the present invention; second insulation course and organic resin layer are generally known protective seam; and after forming second insulation course; preferably form an organic resin layer again on second insulation course, so that the planar depositions of a planarization of pixel electrode to be provided.
Description of drawings
Fig. 1 is the circuit diagram of the single pixel region of Thin Film Transistor-LCD;
Fig. 2 a is the diagrammatic cross-section of the transistor area of known Thin Film Transistor-LCD;
Fig. 2 b is the pixel electrode of known Thin Film Transistor-LCD and the diagrammatic cross-section of the bad way of contact of second metal level;
Fig. 3 a is the upside synoptic diagram in the pixel electrode contacting point zone of another known Thin Film Transistor-LCD;
Fig. 3 b is the diagrammatic cross-section in pixel electrode contacting point zone of the Thin Film Transistor-LCD of Fig. 3 a;
Fig. 4 is the upside synoptic diagram of the pixel electrode contacting point of Thin Film Transistor-LCD of the present invention;
Fig. 5 a～5f is the making process flow diagram of the pixel electrode contacting point of Thin Film Transistor-LCD of the present invention.
Detailed Description Of The Invention
For more understanding technology contents of the present invention, be described as follows especially exemplified by the preferred specific embodiment of the method for making of the pixel electrode contacting point of Thin Film Transistor-LCD.
The method for making of the pixel electrode contacting point of Thin Film Transistor-LCD in the present embodiment please refer to Fig. 4 and Fig. 5 a～5f, and it is for being denoted as the zone of A among Fig. 1.The 3rd metal level 120 that a surface has an one patterned and the transparent substrates 110 of first insulation course 130 at first are provided, and wherein the 3rd metal level 120 is between first insulation course 130 and transparent substrates 110.In addition the grid lead of thin film transistor (TFT) thus the 3rd metal level 120 form, gate insulator then is made up of first insulation course 130.On first insulation course 130, form amorphous silicon layer and semiconductor ohmic contact layer again with one patterned, for example successively behind deposited amorphous silicon layer and the semiconductor ohmic contact layer, and the Ohmic contact point district that utilizes shadow tone light shield processing procedure to form the channel region of thin film transistor (TFT) with etch process and link to each other with the source/drain polar conductor, this amorphous silicon layer and semiconductor ohmic contact layer can be removed in the pixel electrode contacting point zone fully, so be not shown among Fig. 5 a～5f.Then titanium deposition metal level 140a and aluminum metal layer 140b successively on first insulation course 130, and apply and go up photoresist layer 160, structure is promptly shown in Fig. 5 a at this moment.
Then utilize a shadow tone light shield processing procedure to make this photoresist layer exposure with one patterned, this light shield has three kinds of light transmittances of first, second portion and third part, and wherein the light transmittance of this first is between this second portion and this third part; Preferably when the material of photoresist layer was positive photoresistance, first was a semi transparent material, and light transmittance is preferably about 30%; Second portion is a light-proof material, and light transmittance is preferably about 0%; Third part is a light transmissive material, and light transmittance is preferably about 100%.So photoresist layer 160 has the first caliper zones 210a, the second caliper zones 210b and the 3rd caliper zones 210c, wherein second thickness is thick than first thickness, the 3rd thickness is than first thin thickness, and pixel electrode contacting point (being the square frame 220 among Fig. 4) is positioned at the first caliper zones 210a, the source electrode of thin film transistor (TFT) and drain conductors are positioned at the second caliper zones 210b, and this moment, structure was promptly shown in Fig. 5 b.
At first utilize this moment first wet etching to remove the aluminum metal layer 140b that is positioned at the 3rd caliper zones 210c.The titanium coating 140a that then utilizes the dry ecthing removal to be positioned at the 3rd caliper zones 210c also removes the photoresist layer 160 that is positioned at the first caliper zones 210a simultaneously, and this moment, structure was promptly shown in Fig. 5 c.Then utilize second wet etching to remove the aluminum metal layer 140b that is positioned at the first caliper zones 210a, this moment, structure was promptly shown in Fig. 5 d.Aluminum metal layer 140b and titanium coating 140a promptly finish one patterned, and aluminum metal layer 140b is removed in the pixel electrode contacting point zone, and titanium coating 140a then is retained.And the source electrode of thin film transistor (TFT) and drain conductors are positioned at the second caliper zones 210b, so have aluminum metal layer 140b and titanium coating 140a.
Form second insulation course 170 and organic resin layer 180 on titanium coating 140a successively, this moment, structure was promptly shown in Fig. 5 e.Cover a photoresist layer (not being shown among the figure) at last and define the pixel-by-pixel basis contact region, square frame 220 inside as shown in Figure 4.With the after etching organic resin layer 180 and second insulation layer by layer 170, form contact point window 190, make outside titanium coating 140a is exposed to.Form the transparent pixels electrode 200 of ITO on organic resin layer 180, pixel electrode 200 is contacted with titanium coating 140a in the pixel electrode contacting point zone, this moment, structure was promptly shown in Fig. 5 f.
The method for making of the pixel electrode contacting point of Thin Film Transistor-LCD in the present embodiment, utilize aluminum metal layer and titanium coating as the source/drain polar conductor, and aluminum metal has satisfactory electrical conductivity, thus the metal live width can be designed constriction, and increase aperture ratio of pixels.And because ITO during compared to other pixel electrode materials, is a cheap material, so can reduce cost of manufacture.Yet the contact point of aluminum metal and ITO can produce high resistance when pixel electrode contacts, and among the present invention, changes its contact point into titanium and ITO, and this not only need not change the other materials metal level, and need not increase extra light shield processing procedure.Compared to the structure of using cushion, drain conductors of the present invention and pixel electrode have long-pending than large contact surface in addition.
Compared to utilizing amorphous silicon layer and semiconductor Ohmic contact point layer as the structure of cushion, the present invention does not have the projection electric leakage and takes place, and because of omitting amorphous silicon layer and semiconductor Ohmic contact point layer, so not only can prevent the storage capacitors electric leakage, and can promote capacitance, and then the zero bright spot rate of display is promoted, and increase the dose rate of product.
The foregoing description only is to give an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that claims are described certainly, but not only limits to the foregoing description.
Claims (18)
1, a kind of method for making of pixel electrode contacting point of Thin Film Transistor-LCD, it comprises:
(a) provide a surface to have the transparent substrates of first insulation course;
(b) form the first metal layer and second metal level on this insulation course, wherein this first metal layer is between this second metal level and this first insulation course;
(c) utilize a shadow tone light shield processing procedure on this second metal level, to form a photoresist layer, through in a pixel electrode contacting point zone, removing this second metal level behind the etch process and staying this first metal layer with pattern;
(d) second insulation course of an one patterned of formation on this second metal level; And
(e) on this second insulation course, form a transparent pixels electrode, make that this first metal layer in this pixel electrode contacting point zone contacts with this transparent pixels electrode.
2, method for making as claimed in claim 1 wherein also is included in the 3rd metal level with pattern between described first insulation course and the described transparent substrates in step (a).
3, method for making as claimed in claim 1 is the leakage/source electrode lead of thin film transistor (TFT) at the first metal layer described in the step (b) and described second metal level wherein.
4, method for making as claimed in claim 1, wherein said the first metal layer are titanium.
5, method for making as claimed in claim 1, wherein said second metal level is an aluminum metal.
6, method for making as claimed in claim 1, wherein the pattern of photoresist layer described in the step (c) has first thickness, second thickness, reaches the 3rd thickness, wherein this first thickness is arranged in described pixel electrode contacting point zone, this second thickness is thick than this first thickness, the 3rd thickness is than this first thin thickness, and this second thickness is positioned at the source electrode and the drain conductors zone of described thin film transistor (TFT).
7, method for making as claimed in claim 6, the pattern of wherein said photoresist layer be to use have first, second portion, and the exposure of the light shield of third part formed, wherein the light transmittance of this first is between this second portion and this third part.
8, method for making as claimed in claim 7, the material of wherein said photoresist layer are positive photoresistance, and the described first of described light shield is that semi transparent material, described second portion are that light-proof material, described third part are that light transmissive material constitutes.
9, method for making as claimed in claim 1 wherein also comprises step (d1) after step (d), form an organic resin layer on described second insulation course.
10, a kind of pixel electrode contacting point of Thin Film Transistor-LCD, it comprises:
A surface has the transparent substrates of the 3rd metal level;
First insulation course covers the 3rd metal level and this transparent substrates;
One has the plain conductor of pattern, at least have the first metal layer and second metal level, be formed on this first insulation course, wherein this first metal layer lies between this second metal level and this first insulation course, this second metal level with respect to the 3rd metal level top has an opening, exposes this first metal layer;
One protective seam has second a siliceous insulation course and an organic resin layer, and wherein this second insulation course covers this first metal layer and this second metal top, between this first insulation course and this organic resin layer;
One contact hole is positioned at the 3rd metal level top, passes this protective seam, exposes this first metal layer; And
One transparent pixels electrode is formed on this protective seam, and extends the first metal layer electric connection of this contact hole and this plain conductor.
11, pixel electrode contacting point as claimed in claim 10, it also is included in the 3rd metal level with pattern between described first insulation course and the described transparent substrates.
12, pixel electrode contacting point as claimed in claim 11, wherein described the 3rd metal level of the part grid that is thin film transistor (TFT).
13, pixel electrode contacting point as claimed in claim 10, wherein said the first metal layer are titanium.
14, pixel electrode contacting point as claimed in claim 10, wherein said second metal level is an aluminum metal.
15, pixel electrode contacting point as claimed in claim 10, wherein said shadow tone light shield processing procedure is to utilize one to have first thickness, second thickness, and the photoresist layer of the 3rd thickness, wherein this first thickness is arranged in described pixel electrode contacting point zone, this second thickness is thick than this first thickness, the 3rd thickness is than this first thin thickness, and this second thickness is positioned at the source electrode and the drain conductors zone of described thin film transistor (TFT).
16, pixel electrode contacting point as claimed in claim 15, wherein said shadow tone light shield processing procedure be to use one have first, second portion, and the light shield exposure of third part form, wherein the light transmittance of this first is between this second portion and this third part.
17, pixel electrode contacting point as claimed in claim 16, the material of wherein said photoresist layer is positive photoresistance, and the described first of described light shield is that semi transparent material, described second portion are that light-proof material, described third part are constituted by light transmissive material.
18, pixel electrode contacting point as claimed in claim 11, it also comprises an organic resin layer that forms between described second insulation course and described transparent pixels electrode.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100047954A CN100371814C (en) | 2005-01-26 | 2005-01-26 | Manufacture of pixel electrode contacting point of thin-membrane transistor liquid crystal displaying device |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100047954A CN100371814C (en) | 2005-01-26 | 2005-01-26 | Manufacture of pixel electrode contacting point of thin-membrane transistor liquid crystal displaying device |
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| CN1645224A true CN1645224A (en) | 2005-07-27 |
| CN100371814C CN100371814C (en) | 2008-02-27 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100405575C (en) * | 2006-06-20 | 2008-07-23 | 友达光电股份有限公司 | Method for forming contact holes on display device, and base plate of display device |
| CN104218070A (en) * | 2014-08-28 | 2014-12-17 | 合肥鑫晟光电科技有限公司 | Array substrate and display device |
| WO2016106880A1 (en) * | 2014-12-31 | 2016-07-07 | 深圳市华星光电技术有限公司 | Manufacturing method for array substrate |
| CN112928126A (en) * | 2021-03-31 | 2021-06-08 | 长沙惠科光电有限公司 | Array substrate, manufacturing method thereof and display panel |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW413949B (en) * | 1998-12-12 | 2000-12-01 | Samsung Electronics Co Ltd | Thin film transistor array panels for liquid crystal displays and methods of manufacturing the same |
| JP4565799B2 (en) * | 2002-07-01 | 2010-10-20 | 大林精工株式会社 | Horizontal electric field type liquid crystal display device, manufacturing method thereof, scanning exposure apparatus, and mixed scanning exposure apparatus |
| US7205570B2 (en) * | 2002-07-19 | 2007-04-17 | Samsung Electronics Co., Ltd. | Thin film transistor array panel |
-
2005
- 2005-01-26 CN CNB2005100047954A patent/CN100371814C/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100405575C (en) * | 2006-06-20 | 2008-07-23 | 友达光电股份有限公司 | Method for forming contact holes on display device, and base plate of display device |
| CN104218070A (en) * | 2014-08-28 | 2014-12-17 | 合肥鑫晟光电科技有限公司 | Array substrate and display device |
| WO2016106880A1 (en) * | 2014-12-31 | 2016-07-07 | 深圳市华星光电技术有限公司 | Manufacturing method for array substrate |
| CN112928126A (en) * | 2021-03-31 | 2021-06-08 | 长沙惠科光电有限公司 | Array substrate, manufacturing method thereof and display panel |
| CN112928126B (en) * | 2021-03-31 | 2022-07-22 | 长沙惠科光电有限公司 | Array substrate, manufacturing method thereof and display panel |
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| CN100371814C (en) | 2008-02-27 |
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